CN104766779B - 用于涂覆衬底的方法和涂覆器 - Google Patents
用于涂覆衬底的方法和涂覆器 Download PDFInfo
- Publication number
- CN104766779B CN104766779B CN201510157919.6A CN201510157919A CN104766779B CN 104766779 B CN104766779 B CN 104766779B CN 201510157919 A CN201510157919 A CN 201510157919A CN 104766779 B CN104766779 B CN 104766779B
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- China
- Prior art keywords
- magnet
- angle
- magnet assembly
- applicator
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000000758 substrate Substances 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims abstract description 63
- 239000011248 coating agent Substances 0.000 claims abstract description 41
- 238000000576 coating method Methods 0.000 claims abstract description 41
- 238000000429 assembly Methods 0.000 claims abstract description 32
- 230000000712 assembly Effects 0.000 claims abstract description 32
- 238000005452 bending Methods 0.000 claims abstract description 18
- 230000008859 change Effects 0.000 claims abstract description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000037237 body shape Effects 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 description 33
- 238000000151 deposition Methods 0.000 description 32
- 230000008021 deposition Effects 0.000 description 30
- 239000000463 material Substances 0.000 description 24
- 238000012545 processing Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 15
- 239000010408 film Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 210000004027 cell Anatomy 0.000 description 8
- 230000003068 static effect Effects 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000002826 coolant Substances 0.000 description 4
- 238000010891 electric arc Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000000717 retained effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 210000002381 plasma Anatomy 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000032696 parturition Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09172133A EP2306489A1 (en) | 2009-10-02 | 2009-10-02 | Method for coating a substrate and coater |
| EP09172133.2 | 2009-10-02 | ||
| CN201080044690.0A CN102549706B (zh) | 2009-10-02 | 2010-09-30 | 用于涂覆衬底的方法和涂覆器 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080044690.0A Division CN102549706B (zh) | 2009-10-02 | 2010-09-30 | 用于涂覆衬底的方法和涂覆器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104766779A CN104766779A (zh) | 2015-07-08 |
| CN104766779B true CN104766779B (zh) | 2017-07-25 |
Family
ID=41725818
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510157919.6A Active CN104766779B (zh) | 2009-10-02 | 2010-09-30 | 用于涂覆衬底的方法和涂覆器 |
| CN201080044690.0A Active CN102549706B (zh) | 2009-10-02 | 2010-09-30 | 用于涂覆衬底的方法和涂覆器 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080044690.0A Active CN102549706B (zh) | 2009-10-02 | 2010-09-30 | 用于涂覆衬底的方法和涂覆器 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20110079508A1 (ko) |
| EP (2) | EP2306489A1 (ko) |
| JP (4) | JP2013506756A (ko) |
| KR (2) | KR101709520B1 (ko) |
| CN (2) | CN104766779B (ko) |
| TW (3) | TWI578371B (ko) |
| WO (1) | WO2011039316A1 (ko) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140332369A1 (en) * | 2011-10-24 | 2014-11-13 | Applied Materials, Inc. | Multidirectional racetrack rotary cathode for pvd array applications |
| JP6073383B2 (ja) * | 2012-03-12 | 2017-02-01 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | スパッタ堆積用の小型の回転可能なスパッタデバイス |
| WO2014127847A1 (en) * | 2013-02-25 | 2014-08-28 | Applied Materials, Inc. | Apparatus with neighboring sputter cathodes and method of operation thereof |
| EP2778253B1 (de) * | 2013-02-26 | 2018-10-24 | Oerlikon Surface Solutions AG, Pfäffikon | Zylinderförmige Verdampfungsquelle |
| WO2015072046A1 (ja) * | 2013-11-14 | 2015-05-21 | 株式会社Ｊｏｌｅｄ | スパッタリング装置 |
| BE1021296B1 (nl) * | 2014-04-18 | 2015-10-23 | Soleras Advanced Coatings Bvba | Sputter systeem voor uniform sputteren |
| WO2015172835A1 (en) * | 2014-05-15 | 2015-11-19 | Applied Materials, Inc. | Apparatus and method for coating a substrate by rotary target assemblies in two coating regions |
| KR20170018074A (ko) * | 2014-06-23 | 2017-02-15 | 어플라이드 머티어리얼스, 인코포레이티드 | 비아 또는 트렌치에 층을 증착하는 방법 및 그에 의해 획득된 제품들 |
| BE1022358B1 (nl) * | 2014-07-09 | 2016-03-24 | Soleras Advanced Coatings Bvba | Sputterinrichting met bewegend doelwit |
| CN104694892A (zh) * | 2015-03-27 | 2015-06-10 | 京东方科技集团股份有限公司 | 一种溅射装置 |
| KR102142002B1 (ko) * | 2015-04-09 | 2020-08-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 상의 재료 증착을 위한 방법, 재료 증착 프로세스를 제어하기 위한 제어기, 및 기판 상의 층 증착을 위한 장치 |
| WO2016192814A1 (en) * | 2015-06-05 | 2016-12-08 | Applied Materials, Inc. | Sputter deposition source, sputtering apparatus and method of operating thereof |
| KR102337787B1 (ko) * | 2016-04-21 | 2021-12-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판을 코팅하기 위한 방법들 및 코터 |
| WO2017190763A1 (en) * | 2016-05-02 | 2017-11-09 | Applied Materials, Inc. | Magnetron sputtering method |
| JP6396367B2 (ja) * | 2016-06-27 | 2018-09-26 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Ｐｖｄアレイ用の多方向レーストラック回転カソード |
| KR101760218B1 (ko) * | 2016-08-30 | 2017-07-20 | 전기표 | 수직진동 제트천공장치 및 방법, 그리고 수직진동 제트그라우팅 장치 및 방법 |
| KR20190077575A (ko) * | 2016-11-22 | 2019-07-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 상으로의 층 증착을 위한 장치 및 방법 |
| CN107541712A (zh) * | 2017-10-11 | 2018-01-05 | 广东腾胜真空技术工程有限公司 | 一种双端进出的玻璃镀膜设备 |
| JP7328744B2 (ja) * | 2018-07-31 | 2023-08-17 | キヤノントッキ株式会社 | 成膜装置、および、電子デバイスの製造方法 |
| KR20220106187A (ko) * | 2020-07-08 | 2022-07-28 | 가부시키가이샤 아루박 | 성막 방법 |
| CN117178340A (zh) * | 2021-04-16 | 2023-12-05 | 瑞士艾发科技 | 用于涂覆3d物体的溅射装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2656432Y (zh) * | 2003-09-11 | 2004-11-17 | 深圳豪威真空光电子股份有限公司 | 旋转式磁控溅射靶 |
| CN1861835A (zh) * | 2005-05-13 | 2006-11-15 | 应用薄膜股份有限公司 | 操作具有靶的溅射阴极的方法 |
| CN101300372A (zh) * | 2005-11-04 | 2008-11-05 | 新明和工业株式会社 | 磁控管溅射装置用的磁体构件、阴极单元以及磁控管溅射装置 |
| CN100513633C (zh) * | 2004-05-05 | 2009-07-15 | 应用材料有限责任与两合公司 | 带有可转动的磁控管的大面积组件的镀膜机 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH024965A (ja) * | 1988-06-09 | 1990-01-09 | Hitachi Ltd | スパッタリングターゲットおよびそれを用いたマグネトロンスパッタ装置 |
| WO1992001081A1 (en) * | 1990-07-06 | 1992-01-23 | The Boc Group, Inc. | Method and apparatus for co-sputtering and cross-sputtering homogeneous films |
| GB9121665D0 (en) * | 1991-10-11 | 1991-11-27 | Boc Group Plc | Sputtering processes and apparatus |
| JPH05263225A (ja) * | 1992-03-18 | 1993-10-12 | Asahi Glass Co Ltd | スパッタリング方法 |
| JPH1129866A (ja) * | 1997-07-11 | 1999-02-02 | Fujitsu Ltd | スパッタ装置 |
| US6365010B1 (en) * | 1998-11-06 | 2002-04-02 | Scivac | Sputtering apparatus and process for high rate coatings |
| JP2000192239A (ja) * | 1998-12-22 | 2000-07-11 | Matsushita Electric Ind Co Ltd | スパッタリング方法およびスパッタリング装置 |
| US20010050220A1 (en) * | 1999-11-16 | 2001-12-13 | Applied Materials, Inc. | Method and apparatus for physical vapor deposition using modulated power |
| US20020189939A1 (en) * | 2001-06-14 | 2002-12-19 | German John R. | Alternating current rotatable sputter cathode |
| TW573041B (en) * | 2002-02-07 | 2004-01-21 | Hannstar Display Corp | Method for improving performance of sputtering target |
| JP2006083408A (ja) * | 2004-09-14 | 2006-03-30 | Shin Meiwa Ind Co Ltd | 真空成膜装置 |
| CN101297059A (zh) * | 2005-10-24 | 2008-10-29 | 索莱拉斯有限公司 | 结合固定或者旋转靶的阴极与移动磁体组件的组合及其应用 |
| JP4721878B2 (ja) * | 2005-11-22 | 2011-07-13 | キヤノンアネルバ株式会社 | スパッタリング装置 |
| EP1880866A1 (en) * | 2006-07-19 | 2008-01-23 | Sicpa Holding S.A. | Oriented image coating on transparent substrate |
| US20080047831A1 (en) * | 2006-08-24 | 2008-02-28 | Hendryk Richert | Segmented/modular magnet bars for sputtering target |
| JP4937772B2 (ja) * | 2007-01-22 | 2012-05-23 | 東京エレクトロン株式会社 | 基板の処理方法 |
| GB0715879D0 (en) * | 2007-08-15 | 2007-09-26 | Gencoa Ltd | Low impedance plasma |
| JP4960851B2 (ja) * | 2007-12-19 | 2012-06-27 | 株式会社アルバック | 磁石装置、マグネトロンスパッタ装置 |
| US20100012481A1 (en) * | 2008-07-21 | 2010-01-21 | Guo G X | Deposition system having improved material utilization |
-
2009
- 2009-10-02 EP EP09172133A patent/EP2306489A1/en not_active Withdrawn
- 2009-10-09 US US12/577,073 patent/US20110079508A1/en not_active Abandoned
-
2010
- 2010-09-30 EP EP10760679.0A patent/EP2483907B1/en active Active
- 2010-09-30 JP JP2012531432A patent/JP2013506756A/ja active Pending
- 2010-09-30 US US13/499,651 patent/US20120273343A1/en not_active Abandoned
- 2010-09-30 CN CN201510157919.6A patent/CN104766779B/zh active Active
- 2010-09-30 WO PCT/EP2010/064574 patent/WO2011039316A1/en active Application Filing
- 2010-09-30 KR KR1020157010836A patent/KR101709520B1/ko active IP Right Grant
- 2010-09-30 CN CN201080044690.0A patent/CN102549706B/zh active Active
- 2010-09-30 KR KR1020127011388A patent/KR101708194B1/ko active IP Right Grant
- 2010-10-01 TW TW104110304A patent/TWI578371B/zh active
- 2010-10-01 TW TW099133598A patent/TWI494969B/zh active
- 2010-10-01 TW TW104120776A patent/TWI567777B/zh active
-
2015
- 2015-03-04 JP JP2015042897A patent/JP6104967B2/ja active Active
- 2015-03-04 JP JP2015042898A patent/JP5993974B2/ja active Active
-
2017
- 2017-03-01 JP JP2017038029A patent/JP6385487B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2656432Y (zh) * | 2003-09-11 | 2004-11-17 | 深圳豪威真空光电子股份有限公司 | 旋转式磁控溅射靶 |
| CN100513633C (zh) * | 2004-05-05 | 2009-07-15 | 应用材料有限责任与两合公司 | 带有可转动的磁控管的大面积组件的镀膜机 |
| CN1861835A (zh) * | 2005-05-13 | 2006-11-15 | 应用薄膜股份有限公司 | 操作具有靶的溅射阴极的方法 |
| CN101300372A (zh) * | 2005-11-04 | 2008-11-05 | 新明和工业株式会社 | 磁控管溅射装置用的磁体构件、阴极单元以及磁控管溅射装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101708194B1 (ko) | 2017-02-20 |
| JP5993974B2 (ja) | 2016-09-21 |
| EP2483907A1 (en) | 2012-08-08 |
| TWI567777B (zh) | 2017-01-21 |
| WO2011039316A1 (en) | 2011-04-07 |
| TWI578371B (zh) | 2017-04-11 |
| JP6104967B2 (ja) | 2017-03-29 |
| JP2017128813A (ja) | 2017-07-27 |
| JP6385487B2 (ja) | 2018-09-05 |
| KR20120092619A (ko) | 2012-08-21 |
| CN104766779A (zh) | 2015-07-08 |
| US20120273343A1 (en) | 2012-11-01 |
| JP2015158013A (ja) | 2015-09-03 |
| TW201530606A (zh) | 2015-08-01 |
| CN102549706B (zh) | 2016-03-02 |
| JP2013506756A (ja) | 2013-02-28 |
| TWI494969B (zh) | 2015-08-01 |
| EP2306489A1 (en) | 2011-04-06 |
| KR20150052359A (ko) | 2015-05-13 |
| KR101709520B1 (ko) | 2017-02-23 |
| US20110079508A1 (en) | 2011-04-07 |
| TW201113927A (en) | 2011-04-16 |
| JP2015148014A (ja) | 2015-08-20 |
| EP2483907B1 (en) | 2016-07-27 |
| TW201539524A (zh) | 2015-10-16 |
| CN102549706A (zh) | 2012-07-04 |
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| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
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| GR01 | Patent grant | ||
| GR01 | Patent grant |