CN104752533B - Gate line structure of solar cell - Google Patents
Gate line structure of solar cell Download PDFInfo
- Publication number
- CN104752533B CN104752533B CN201510171333.5A CN201510171333A CN104752533B CN 104752533 B CN104752533 B CN 104752533B CN 201510171333 A CN201510171333 A CN 201510171333A CN 104752533 B CN104752533 B CN 104752533B
- Authority
- CN
- China
- Prior art keywords
- gate line
- silver paste
- grid line
- microns
- tinsel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052709 silver Inorganic materials 0.000 claims abstract description 42
- 239000004332 silver Substances 0.000 claims abstract description 42
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000003292 glue Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims description 2
- 239000000835 fiber Substances 0.000 claims description 2
- 239000000945 filler Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract description 8
- 230000001070 adhesive effect Effects 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000007639 printing Methods 0.000 abstract description 2
- 238000009954 braiding Methods 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 238000009776 industrial production Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 2
- 238000013475 authorization Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a gate line structure of a solar cell. The gate line structure is composed of metal wires, conductive silver adhesives and silver paste, and a gate line is made by braiding the metal wires which is coated with the silver adhesives and the silver paste sequentially, so that excellent adhesive strength between the silver paste and the metal wires is guaranteed while good ohmic contact between an auxiliary gate line and a silicon chip is guaranteed as well. The silver paste for a main gate line is free of frit, excellent adhesion between the main gate line and the silicon chip is guaranteed while recombination of a few of charge carriers below the main gate line can be reduced. Compared with the prior art, the gate line structure of the solar cell has the advantages that consumption of the silver paste is greatly reduced, so that more expensive silver paste can be saved, and production cost is effectively reduced; in addition, excellent aspect ratio of the gate line can be guaranteed, possibility of gate breakage and false printing is completely avoided, and accordingly photoelectric conversion efficiency of the solar cell is improved, and suitableness for large-scale industrial production is realized.
Description
Technical field
The invention belongs to area of solar cell, and in particular to a kind of grid line structure of solaode.
Background technology
Now traditional front electrode of solar battery manufacturing process generally uses screen printing technique, the slurry of employing
Material is expensive silver paste so that the manufacturing cost of solaode remains high.Simultaneously because the limitation of half tone, prints
Grid line depth-width ratio is less so that string resistance is larger with shading-area, so as to affect the conversion efficiency of battery.
Replace silver paste reduce manufacturing cost using tinsel, and lift conversion efficiency.The grid line is compiled by tinsel
Knit and form, first scribble one layer of elargol on the metal filament, then scribble one layer of silver paste, it is ensured that be excellent between silver paste and tinsel to glue
Relay, while also ensure that secondary grid line is contacted with silicon chip good ohmic；Frit is not contained for the silver paste in main gate line, to ensure
Main gate line can reduce the compound of minority carrier under main gate line, so as to be lifted while having good adhesive force with silicon chip
Conversion efficiency.Compared with prior art, the present invention significantly reduces the consumption of silver paste such that it is able to just saving more costlinesses
Starch adhesive material, effectively reduces production cost, while also can guarantee that the excellent depth-width ratio of grid line, prevent to resolve grid and empty print can
Energy property, and then the photoelectric transformation efficiency of solar battery sheet is improve, and it is suitable for large-scale industrialized production.
203415589 U of documents CN（Authorization Notice No.）Propose " a kind of grid line structure of solar battery sheet ".
Using contact electrode and the tinsel of connection contact electrode, tinsel is located above each contact electrode and forms bridge knot the program
Structure；Contact electrode is distributed in dot matrix on solar battery sheet surface, and after printing is sintered and formed by silver paste.But, from
The structural analyses of the solar cell grid line, the grid line made of the method yet suffer from problem.Reason be not with contact electrode and connect
Tactile tinsel is largely reducing with the adhesive force of silicon chip, and finally reduces the efficiency of solaode.
202473942 U of documents CN（Authorization Notice No.）Propose " high performance solar batteries structure ".Program profit
With by laying one layer of filigree, silver paste is laid on filigree.But, from the structural analyses of the solar cell grid line, using should
The grid line that method makes yet suffers from problem.Reason is that filamentary silver is inadequate with the adhesive force of silver paste, and finally makes solaode
Efficiency is reduced.
The content of the invention
In order to overcome drawbacks described above, the invention provides a kind of grid line structure of solaode, solves the office of half tone
It is sex-limited, prevent to resolve grid, the probability of empty print and excellent welding pulling force.
The technical scheme that adopted to solve its technical problem of the present invention is：A kind of grid line structure of solaode,
The netted gate line electrode structure for being formed is woven into including by main gate line and secondary grid line, the main gate line and secondary grid line are tinsel,
Last layer conductive silver glue and silver paste are applied successively on surface wiry.
As a further improvement on the present invention, the tinsel is by spun gold, filamentary silver, copper wire, stannum silk, aluminium wire, titanium silk and contains
One or more component in the conductive fiber of carbon.
As a further improvement on the present invention, the width wiry for secondary grid line is 10 microns to 90 microns, height
For 10 microns to 90 microns.
As a further improvement on the present invention, for main gate line width wiry be 1 millimeter to 2 millimeters, be highly
10 microns to 90 microns.
As a further improvement on the present invention, conductive silver glue main constituents are resin and conducting filler.
As a further improvement on the present invention, the silver paste for the wire surface of main gate line does not contain frit, the use
Contain frit in the tinsel of secondary grid line.
As a further improvement on the present invention, silver paste and conductive silver glue thickness are 5 microns to 30 microns.
The invention has the beneficial effects as follows：The present invention is formed by metal wire knitted, first scribbles one layer of elargol on the metal filament,
One layer of silver paste is scribbled again, it is ensured that excellent bonding force between silver paste and tinsel, while also ensure that secondary grid line is good with silicon chip
Good Ohmic contact；Frit is not contained for the silver paste in main gate line, it is ensured that main gate line has good adhesive force to become reconciled with silicon chip
Electric current collection ability, decrease the compound of minority carrier below main gate line.
Description of the drawings
Fig. 1 is the grid line structure schematic cross-section of the present invention；
Fig. 2 is the grid line structure floor map of the present invention；
Indicate in figure：1- silver pastes；2- conductive silver glues；3- tinsels；31- main gate lines；32- pair grid lines.
Specific embodiment
In order to deepen the understanding of the present invention, below in conjunction with embodiment and accompanying drawing, the invention will be further described, should
Embodiment is only used for the explanation present invention, does not constitute limiting the scope of the present invention.
Embodiment：
A kind of implementation of the grid line structure of solaode, it is concrete such as with：Preferably, the tinsel 3 is filamentary silver,
For a diameter of 40 microns of the filamentary silver of thin grid, the wire diameter for main grid grid line is 1 millimeter, and filamentary silver is equidistantly arranged
The grid line structure of metal gauze is formed, as shown in Figure 2.One layer 5 microns thick are scribbled on the surface of main gate line 31, secondary grid line 32 to lead
Electric elargol 2, applies 5 microns of silver pastes 1 without frit of last layer in main gate line 31,5 microns of last layer is applied on secondary grid line 32
Silver paste 1 containing frit, dries finally by sintering furnace and sinters the grid line structure required for being formed.By the method, can
Effectively to reduce cost of electricity-generating, improve generating efficiency.
Embodiments of the invention are above are only, certainly, improving according to the actual requirements and further there are other realities
Applying method.However, it should it is clear that, based on similar above-mentioned or other enforcements with same idea for not stating out
The conversion of method, all should be encompassed within the protection domain of the claims in the present invention.
Claims (6)
1. a kind of grid line structure of solaode, including by main gate line（31）With secondary grid line（32）It is woven into the grid of netted formation
Line electrode structure, it is characterised in that：The main gate line（31）With secondary grid line（31）For tinsel（3）, in tinsel（3）Surface
Last layer conductive silver glue is applied successively（2）And silver paste（1）, the tinsel for main gate line（3）The silver paste on surface（1）Without glass
Glass material, the tinsel for secondary grid line（3）Containing frit.
2. the grid line structure of solaode according to claim 1, it is characterised in that：The tinsel（3）By spun gold,
One or more component in the conductive fiber of filamentary silver, copper wire, stannum silk, aluminium wire, titanium silk and carbon containing.
3. the grid line structure of solaode according to claim 1, it is characterised in that：It is described for secondary grid line（32）'s
Tinsel（3）Width be 10 microns to 90 microns, be highly 10 microns to 90 microns.
4. the grid line structure of solaode according to claim 1, it is characterised in that：It is described for main gate line（31）'s
Tinsel（3）Width be 1 millimeter to 2 millimeters, be highly 10 microns to 90 microns.
5. the grid line structure of solaode according to claim 1, it is characterised in that：The conductive silver glue（2）Mainly
Constituent is resin and conducting filler.
6. the grid line structure of solaode according to claim 1, it is characterised in that：Silver paste（1）And conductive silver
Glue（2）Thickness is 5 microns to 30 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510171333.5A CN104752533B (en) | 2014-12-31 | 2015-04-13 | Gate line structure of solar cell |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410843818 | 2014-12-31 | ||
| CN201410843818X | 2014-12-31 | ||
| CN201510171333.5A CN104752533B (en) | 2014-12-31 | 2015-04-13 | Gate line structure of solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104752533A CN104752533A (en) | 2015-07-01 |
| CN104752533B true CN104752533B (en) | 2017-04-12 |
Family
ID=53591924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510171333.5A Active CN104752533B (en) | 2014-12-31 | 2015-04-13 | Gate line structure of solar cell |
Country Status (1)
| Country | Link |
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| CN (1) | CN104752533B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742408B (en) * | 2016-03-28 | 2017-08-25 | 泰州中来光电科技有限公司 | The method for metallising and battery and component of N-type double-sided solar battery, system |
| CN105742410A (en) * | 2016-04-14 | 2016-07-06 | 泰州中来光电科技有限公司 | Back-junction N-type crystal-silicon solar cell and fabrication method, module and system thereof |
| CN112002772B (en) * | 2020-08-28 | 2022-03-08 | 晶科能源股份有限公司 | Solar cell grid line structure and photovoltaic module |
| CN112599642A (en) * | 2020-12-18 | 2021-04-02 | 泰州隆基乐叶光伏科技有限公司 | Welding method of battery piece and photovoltaic module |
| CN114300549B (en) * | 2021-12-29 | 2023-09-08 | 明冠新材料股份有限公司 | Single-glass photovoltaic cell, preparation method and photovoltaic module |
| CN114639743A (en) * | 2022-02-25 | 2022-06-17 | 通威太阳能（合肥）有限公司 | Heterojunction cell, photovoltaic module cell string and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148264A (en) * | 2010-12-30 | 2011-08-10 | 袁晓 | Silicon solar battery with wire electrode and manufacturing method thereof |
| CN102623519A (en) * | 2012-03-21 | 2012-08-01 | 日地太阳能电力股份有限公司 | Efficient solar cell structure |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2948142B2 (en) * | 1996-02-06 | 1999-09-13 | 三洋電機株式会社 | Collector electrode forming method |
| JP5203732B2 (en) * | 2008-01-30 | 2013-06-05 | 信越化学工業株式会社 | Manufacturing method of solar cell |
| CN103366854A (en) * | 2013-07-08 | 2013-10-23 | 余小翠 | Composite electrode material for preparing positive electrode of photovoltaic cell |
| CN204614793U (en) * | 2014-12-31 | 2015-09-02 | 苏州润阳光伏科技有限公司 | The grid line structure of solar cell |
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2015
- 2015-04-13 CN CN201510171333.5A patent/CN104752533B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148264A (en) * | 2010-12-30 | 2011-08-10 | 袁晓 | Silicon solar battery with wire electrode and manufacturing method thereof |
| CN102623519A (en) * | 2012-03-21 | 2012-08-01 | 日地太阳能电力股份有限公司 | Efficient solar cell structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104752533A (en) | 2015-07-01 |
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| C06 | Publication | ||
| PB01 | Publication | ||
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| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180705 Address after: 224000 No. 66 Lijiang Road, Yancheng City economic and Technological Development Zone, Jiangsu (G) Patentee after: JIANGSU RUNYANG YUEDA PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. Address before: 215300 8th floor, science and Technology Plaza, Qianjin East Road, Kunshan Development Zone, Suzhou, Jiangsu Patentee before: SUZHOU RUNYANG PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: The grid structure of solar cells Effective date of registration: 20231218 Granted publication date: 20170412 Pledgee: Agricultural Bank of China Limited Yancheng Development Zone Branch Pledgor: JIANGSU RUNYANG YUEDA PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. Registration number: Y2023990000613 |