CN102446986A - Grid line structure of silicon solar battery - Google Patents
Grid line structure of silicon solar battery Download PDFInfo
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- CN102446986A CN102446986A CN2010102987344A CN201010298734A CN102446986A CN 102446986 A CN102446986 A CN 102446986A CN 2010102987344 A CN2010102987344 A CN 2010102987344A CN 201010298734 A CN201010298734 A CN 201010298734A CN 102446986 A CN102446986 A CN 102446986A
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Abstract
The invention relates to a grid line structure of a silicon solar battery; more than two main grid lines are arranged on the surface of the silicon solar battery in parallel; the main grid lines are metal wires which are sintered by a sintering furnace and have the width of 1-2mm, holes are periodically arranged on each main grid line, are square and have the size of 30-500nm, and the periodical distance between the holes is 40-1000nm. The main grid lines are printed by sizing materials with the granularity of less than 20hm. The distance between the two main grid lines is 30-60mm. For the grid line structure, the periodical holes are arranged on the main grid lines so that the main grid lines turn into light transmitting systems effectively using light wave effect, and therefore, the light receiving area of the silicon solar battery is increased from 93.63% to 96.71%, and the conversion efficiency of the silicon solar battery is improved in the end.
Description
Technical field
The present invention relates to the silicon solar cell technologies field, especially relate to a kind of grid line structure of silicon solar cell.
Background technology
The crystal silicon solar energy battery industrialization technology is very ripe at present, yet compares with conventional energy resource, and higher cost has restricted its development with lower efficient relatively, and for how to reduce cost and improve conversion efficiency, people have carried out a large amount of research.
In influencing the factor of efficient, grid line is one of them key factor.The grid line design on silicon solar surface is the collection photoelectric current for the limit of maximum, and reduces series resistance as much as possible, and this just means that grid line should be close more more slightly good more, yet this must reduce the light-receiving area of silion cell.Therefore The Grid-Lines Design should be light-receiving area and collect photoelectric current and reduce the compromise between the series resistance.
In order to reach optimization to grid line, in the collection that does not influence electric current, do not increase under the prerequisite of series resistance simultaneously, increase light-receiving area as much as possible.For example, mention in the Chinese invention patent 200910085472.0 and a kind of electrode design is become the method for dots structure, this method has effectively increased the light-receiving area of silion cell; But increased once extra electroplating process; Both increased cost, all than higher, the cavity is of a size of 10um in this invention simultaneously to the requirement of life-span of silicon chip and cleanliness factor; Oversize, influence the collection of electric current to a certain extent.And for example mention grid line and solar energy among the Chinese invention patent 200910060836.X and receive at least two solder joints between the light substrate, through plain conductor electric current is pooled to metal tape then.This kind method has effectively increased the light-receiving area of silion cell, but needs to have increased cost at silicon chip extension design metal tape; Simultaneously a large amount of pads, also higher to the requirement of production technology.
Summary of the invention
The technical problem that the present invention will solve is: overcome the defective that above-mentioned prior art exists; A kind of grid line structure of silicon solar cell is provided; When reducing the silicon solar cell cost of manufacture; Increase the light-receiving area of battery, and do not influence the collection of photoelectric current, finally improve the photoelectric conversion efficiency of silicon solar cell.
The technical solution adopted for the present invention to solve the technical problems is: a kind of grid line structure of silicon solar cell; Silicon solar energy battery surface is arranged with the main grid line more than two in parallel; Described main grid line is that the width through the sintering furnace sintering is the tinsel of 1～2mm, has the hole of periodically offering on the every main grid line, and described hole is a square aperture; Hole is of a size of 30～500nm, and the period pitch of described hole is 40～1000nm.
Further, the printing material of described main grid line is the slurry of granularity less than 20nm.
Further, the spacing between described two main grid lines is 30～60mm.
The invention has the beneficial effects as follows: main grid line of the present invention is for having periodic hole; Theoretical according to physical ultra transmission and utilize eigen mode to launch analytical method; Can resolve and obtain this grid line structure and light wave action rule, be of a size of 30～500nm at hole, during less than 1um; Can increase the light-receiving area of solar cell to greatest extent, not influence the collection of photoelectric current simultaneously again.Manufacture craft is also simple relatively simultaneously, and during printing, screen printing screens or the plating web plate that need only make like grid line structure of the present invention print sintering, can make silicon chip surface form grid line structure of the present invention.Through design cycle property hole on the main grid line, the printing opacity system that the main grid line is become effectively utilize the light wave action rule, the light-receiving area of silicon solar cell brings up to 96.71% by 93.63%, has finally improved the conversion efficiency of silicon solar cell.
Description of drawings
Below in conjunction with accompanying drawing the present invention is described further.
Fig. 1 is a structural representation of the present invention;
Fig. 2 is spectral response figure of the present invention;
Wherein: 1. main grid line, 2. thin grid line, 3. hole.
Embodiment
The grid line structure of silicon solar cell as shown in Figure 1; Present embodiment is an example with the accurate square polysilicon solar cell of 156mm*156mm, and silicon solar energy battery surface is provided with three 1,65 156mm*0.2mm thin grid lines 2 parallel to each other of main grid line that 156mm*1.6mm is parallel to each other, and main grid line 1 is vertical with thin grid line 2; The printing material of main grid line is the slurry of granularity less than 20nm; Shown in Figure 1ly be main grid line wherein, have several holes of periodically offering 3 on the every main grid line, hole 3 is a square aperture; Hole 3 is of a size of 400nm, and the period pitch of hole 3 is 1000nm.The main grid line that has hole 3 structures all is to be formed by the high temperature sintering of Ag slurry sintering furnace at 300 ℃～800 ℃ with thin grid line 2.
The present invention is prepared by following steps:
(1) preparation contains the silk screen printing web plate of grid line structure of the present invention or electroplates web plate;
(2) prepare the deielectric-coating that one deck or multilayer have inactivating performance as the silicon chip of silicon substrate through common process making herbs into wool, diffusion system knot, back cleaning and removing PSG, chemical vapour deposition technique; The screen painting of on deielectric-coating, making with the first step then contains the grid line structure of pore space structure; Silicon chip is placed sintering furnace, sintering grid line under 300 ℃～800 ℃ high temperature.Above-mentioned deielectric-coating with inactivating performance can be SiO
2, SiN
2, a-Si:H (hydrogenation non crystal silicon film), a-SiC film individual layer or multilayer complex films.
The spectral response of present embodiment is used main grid line structure of the present invention referring to Fig. 2, can the shading area be reduced to 3.29% by 6.37%.
In sum; The present invention replaces the main grid line structure of existing complete shading with the main grid line structure that contains plurality of holes, when reducing the silicon solar cell cost of manufacture, increases the light-receiving area of battery; And do not influence the collection of photoelectric current, finally improve the photoelectric conversion efficiency of silicon solar cell.
Claims (3)
1. the grid line structure of a silicon solar cell; It is characterized in that: silicon solar energy battery surface is arranged with the main grid line (1) more than two in parallel; Described main grid line (1) is that the width through the sintering furnace sintering is the tinsel of 1～2mm, has the hole of periodically offering (3) on the every main grid line (1), and described hole (3) is a square aperture; Hole (3) is of a size of 30～500nm, and the period pitch of described hole is 40～1000nm.
2. the grid line structure of a kind of silicon solar cell according to claim 1, it is characterized in that: the printing material of described main grid line (1) is the slurry of granularity less than 20nm.
3. the grid line structure of a kind of silicon solar cell according to claim 1, it is characterized in that: the spacing between described two main grid lines (1) is 30～60mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102987344A CN102446986A (en) | 2010-09-30 | 2010-09-30 | Grid line structure of silicon solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102987344A CN102446986A (en) | 2010-09-30 | 2010-09-30 | Grid line structure of silicon solar battery |
Publications (1)
| Publication Number | Publication Date |
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| CN102446986A true CN102446986A (en) | 2012-05-09 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102987344A Pending CN102446986A (en) | 2010-09-30 | 2010-09-30 | Grid line structure of silicon solar battery |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102184973A (en) * | 2010-11-11 | 2011-09-14 | 江阴浚鑫科技有限公司 | Positive electrode structure of solar battery plate |
| CN102738257A (en) * | 2012-06-15 | 2012-10-17 | 晶澳（扬州）太阳能科技有限公司 | Low-cost efficient solar cell electrode grid line structure |
| CN102810578A (en) * | 2012-08-27 | 2012-12-05 | 海南英利新能源有限公司 | Solar cell and main gate line thereof |
| CN103366854A (en) * | 2013-07-08 | 2013-10-23 | 余小翠 | Composite electrode material for preparing positive electrode of photovoltaic cell |
| CN108140678A (en) * | 2015-09-29 | 2018-06-08 | 夏普株式会社 | Bus bar electrode, solar battery cell and solar cell module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0969517A1 (en) * | 1998-07-04 | 2000-01-05 | International Business Machines Corporation | Electrode for use in electro-optical devices |
| US20080121265A1 (en) * | 2006-11-29 | 2008-05-29 | Sanyo Electric Co., Ltd. | Solar cell module |
| CN101807609A (en) * | 2010-04-02 | 2010-08-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | Electrode structure suitable for high concentration cell or thin-film cell |
| CN101826569A (en) * | 2010-05-13 | 2010-09-08 | 无锡尚德太阳能电力有限公司 | Solar cell, screen printing plate and solar cell module thereof |
-
2010
- 2010-09-30 CN CN2010102987344A patent/CN102446986A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0969517A1 (en) * | 1998-07-04 | 2000-01-05 | International Business Machines Corporation | Electrode for use in electro-optical devices |
| US20080121265A1 (en) * | 2006-11-29 | 2008-05-29 | Sanyo Electric Co., Ltd. | Solar cell module |
| CN101807609A (en) * | 2010-04-02 | 2010-08-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | Electrode structure suitable for high concentration cell or thin-film cell |
| CN101826569A (en) * | 2010-05-13 | 2010-09-08 | 无锡尚德太阳能电力有限公司 | Solar cell, screen printing plate and solar cell module thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102184973A (en) * | 2010-11-11 | 2011-09-14 | 江阴浚鑫科技有限公司 | Positive electrode structure of solar battery plate |
| CN102184973B (en) * | 2010-11-11 | 2013-02-13 | 浚鑫科技股份有限公司 | Positive electrode structure of solar battery plate |
| CN102738257A (en) * | 2012-06-15 | 2012-10-17 | 晶澳（扬州）太阳能科技有限公司 | Low-cost efficient solar cell electrode grid line structure |
| CN102810578A (en) * | 2012-08-27 | 2012-12-05 | 海南英利新能源有限公司 | Solar cell and main gate line thereof |
| CN102810578B (en) * | 2012-08-27 | 2015-09-09 | 海南英利新能源有限公司 | A kind of solar cell and main gate line thereof |
| CN103366854A (en) * | 2013-07-08 | 2013-10-23 | 余小翠 | Composite electrode material for preparing positive electrode of photovoltaic cell |
| CN108140678A (en) * | 2015-09-29 | 2018-06-08 | 夏普株式会社 | Bus bar electrode, solar battery cell and solar cell module |
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Application publication date: 20120509 |