CN112002772B - Solar cell grid line structure and photovoltaic module - Google Patents
Solar cell grid line structure and photovoltaic module Download PDFInfo
- Publication number
- CN112002772B CN112002772B CN202010884545.9A CN202010884545A CN112002772B CN 112002772 B CN112002772 B CN 112002772B CN 202010884545 A CN202010884545 A CN 202010884545A CN 112002772 B CN112002772 B CN 112002772B
- Authority
- CN
- China
- Prior art keywords
- grid line
- oxide
- solar cell
- mass
- glass frit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000011521 glass Substances 0.000 claims abstract description 116
- 239000000463 material Substances 0.000 claims abstract description 63
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 55
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 55
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 38
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000004513 sizing Methods 0.000 claims abstract description 6
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 49
- 229910000464 lead oxide Inorganic materials 0.000 claims description 48
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 46
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 45
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 29
- 229910052714 tellurium Inorganic materials 0.000 claims description 26
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 26
- 239000011787 zinc oxide Substances 0.000 claims description 23
- 229910052810 boron oxide Inorganic materials 0.000 claims description 22
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 22
- 239000011863 silicon-based powder Substances 0.000 claims description 14
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 4
- 239000005751 Copper oxide Substances 0.000 claims description 3
- 229910000431 copper oxide Inorganic materials 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 abstract description 20
- 238000005260 corrosion Methods 0.000 abstract description 20
- 238000003487 electrochemical reaction Methods 0.000 abstract description 13
- 230000009467 reduction Effects 0.000 abstract description 7
- 239000002002 slurry Substances 0.000 description 30
- 230000000052 comparative effect Effects 0.000 description 29
- 238000000034 method Methods 0.000 description 22
- 238000012360 testing method Methods 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 239000000758 substrate Substances 0.000 description 18
- 239000000126 substance Substances 0.000 description 17
- 238000002161 passivation Methods 0.000 description 14
- 239000000843 powder Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 238000007639 printing Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 229910000676 Si alloy Inorganic materials 0.000 description 9
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 8
- 239000000654 additive Substances 0.000 description 7
- 238000003466 welding Methods 0.000 description 7
- 238000010835 comparative analysis Methods 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000006056 electrooxidation reaction Methods 0.000 description 5
- -1 silver-aluminum Chemical compound 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000012752 auxiliary agent Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000006060 molten glass Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000002562 thickening agent Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
The application provides a solar cell grid line structure and a photovoltaic module, and relates to the technical field of solar cells. This solar cell grid line structure includes: a main gate line; the first sizing agent for the auxiliary grid line comprises a first glass material and an aluminum or aluminum-containing material, the first glass material comprises a first metal oxide, the standard electrode potential of metal in the first metal oxide is more than or equal to 0.3V, and the mass content of the first metal oxide in the first glass material is more than or equal to 35%; the auxiliary grid line is partially arranged above the main grid line, and the height of the main grid line is larger than or equal to 12 microns. The application can increase the connection of the main grid line and the auxiliary grid line, reduce the corrosion of electrochemical reaction to the grid line, and better inhibit the influence of the increase of the series resistance and the reduction of the current collection capability.
Description
Technical Field
The application relates to the technical field of solar cells, in particular to a solar cell grid line structure and a photovoltaic module.
Background
With the continuous development of photovoltaic technology, the shelf life of photovoltaic modules is also continuously prolonged, and the reliability and durability of the modules are concerned by related research enterprises or institutions and consumers. The photovoltaic module is generally applied to outdoor environment, and is in the outdoor environment for a long time, particularly under the condition of high temperature and high humidity, and water vapor and the like in the environment enter the module and slowly age to cause corrosion of internal metal parts; the metal surface is contacted with an electrolyte solution to generate electrochemical reaction, so that the metal is ionized, or oxide and hydroxide are generated, so that the material is deteriorated and changed, and the service life of the photovoltaic module is influenced. Specifically, under the long-term high-temperature and high-humidity environment, moisture and oxygen in the air invade the inside of the module, and the material is aged and hydrolyzed to generate acetic acid or the inside of the module enters into oxidizing gas, so that electrochemical corrosion is caused among a welding strip, a metalized grid line or the welding strip and the metalized grid line, the electrical property of the photovoltaic module is reduced, and the power attenuation is increased.
In recent years, N-type solar cells have attracted attention because of their excellent characteristics such as low light attenuation, good stability, and double-sided power generation, and the N-type solar cells have become increasingly popular in the photovoltaic market. The N-type cell structure generally has a P + boron-doped layer on the front surface, an N-type silicon substrate on the substrate, and an N + phosphorus-doped layer on the back surface. The N-type battery generally adopts the main grid line and the auxiliary grid line to be separately printed, and slurry used for forming the main grid line and the auxiliary grid line needs to form good ohmic contact with a silicon substrate after being sintered at high temperature and has good conductivity. However, the connection between the main grid line and the auxiliary grid line in the existing battery grid line structure is not reliable enough, so that the attenuation of the battery in the damp and hot process is increased, and the power of the assembly is reduced.
Disclosure of Invention
An object of the application is to provide a solar cell grid line structure and photovoltaic module, can increase the main grid line and assist being connected of grid line, reduce the corruption of electrochemical reaction to the grid line, better suppression the string hinders the influence that risees and the current collection ability reduces.
In order to achieve the purpose, the technical scheme adopted by the application is as follows:
according to an aspect of the present application, there is provided a solar cell grid line structure, including:
a main gate line;
the first sizing agent for the auxiliary grid line comprises a first glass material and an aluminum or aluminum-containing material, the first glass material comprises a first metal oxide, the standard electrode potential of metal in the first metal oxide is more than or equal to 0.3V, and the mass content of the first metal oxide in the first glass material is more than or equal to 35%;
the auxiliary grid line is partially arranged above the main grid line, and the height of the main grid line is larger than or equal to 12 microns.
In one possible implementation, the first metal oxide includes at least one of tellurium oxide, bismuth oxide, or copper oxide; and the mass content of the first metal oxide in the first glass frit is 35-75%.
In one possible implementation manner, the first metal oxide is bismuth oxide, and the mass content of the bismuth oxide in the first glass frit is 45% to 75%.
In one possible implementation, the first glass frit comprises the following components in mass content:
35-75% of first metal oxide, 0-15% of lead oxide, 8-20% of boron oxide, 3-7% of zinc oxide and 5-8% of silicon powder;
wherein the first metal oxide is bismuth oxide.
In one possible implementation manner, the second paste for the main grid line comprises a second glass frit, and the second glass frit comprises tellurium oxide, and the mass content of the tellurium oxide in the second glass frit is 30% -65%.
In one possible implementation, the second glass frit comprises the following components in mass content:
35-65% of tellurium oxide, 15-20% of boron oxide and 0-5% of zinc oxide.
In one possible implementation, the second slurry comprises the following components in mass content:
88% -92% of silver powder, 2% -4% of second glass frit and 8% -10% of second organic carrier.
In one possible implementation, the first slurry comprises the following components in mass content:
75% -88% of silver powder, 1% -4% of aluminum or aluminum-containing material, 1% -5% of first glass frit and 8% -13% of first organic carrier.
In one possible implementation manner, the height of the main grid line is 12 micrometers to 14 micrometers, or the height of the main grid line is 14 micrometers to 16 micrometers;
and/or the height of the distance between the center of the intersection region of the auxiliary grid line and the main grid line and the PN junction is more than or equal to 7 microns.
It should be noted that the above numerical ranges are inclusive of the endpoints.
According to another aspect of the present application, there is provided a photovoltaic module comprising a plurality of solar cells, the solar cells comprising a solar cell grid line structure as described above.
In one possible implementation, the solar cell is an N-type cell.
Compared with the prior art, the technical scheme provided by the application can achieve the following beneficial effects:
the solar cell grid line structure comprises a main grid line and an auxiliary grid line, wherein slurry for forming the auxiliary grid line comprises first slurry, the first slurry comprises first glass frit and aluminum or aluminum-containing materials, the first glass frit comprises first metal oxide, the standard electrode potential of metal in the first metal oxide is more than or equal to 0.3V, and the mass content of the first metal oxide in the first glass frit is more than or equal to 35%; therefore, by improving the proportion of a certain metal oxide in the first glass frit in the first paste, particularly improving the proportion of a metal oxide with the standard electrode potential of metal not lower than 0.3V, the mass proportion of the metal oxide in the first glass frit is not lower than 35%, the main grid line and the auxiliary grid line which are printed step by step can be better connected, and the attenuation of the battery in the damp and hot process is reduced. In addition, the auxiliary grid line part of the solar cell grid line structure is arranged above the main grid line, the height of the main grid line is increased, the height of the main grid line is not lower than 12 micrometers, corrosion of elements such as lead, tin and the like in the contact part of the solar cell grid line structure and the component solder strip to the cell grid line due to electrochemical reaction is reduced, the attenuation phenomenon caused by the fact that the contact performance of the cell grid line is poor due to the corrosion effect and the current collection capacity is reduced is relieved, and the dual-protection effect can be achieved. Therefore, the solar cell grid line structure can reduce the attenuation of the photovoltaic module in a damp and hot environment.
The photovoltaic module of this application, including a plurality of solar cell, have preceding all characteristics and the advantage of solar cell grid line structure, no longer give unnecessary details here.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a solar cell grid line structure according to an exemplary embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of another solar cell grid line structure provided in an exemplary embodiment of the present application;
fig. 3 is a schematic structural diagram of a solar cell provided in an exemplary embodiment of the present application.
Reference numerals:
1-a silicon substrate;
2-tunneling oxide layer;
3-doped crystalline silicon layer;
4 a back passivation layer;
5-a back gate line electrode;
6-a diffusion layer;
a 61-PN junction;
7-front passivation layer and/or antireflection layer;
8-front grid line electrode;
81-main grid line;
82-minor grid line.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
It should be understood that the term "and/or" as used herein is merely one type of association that describes an associated object, meaning that three relationships may exist, e.g., a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone.
It should be understood that the terms "upper" and "lower" used in the description of the embodiments of the present application are used in a descriptive sense only and not for purposes of limitation. Further, it will be understood that when an element is referred to as being "on" or "under" another element, it can be directly on or under the other element or be indirectly on or under the other element via an intermediate element. As used in the examples of this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
In the present invention, unless otherwise stated, the numerical range "a-b" represents a shorthand representation of any combination of real numbers between a and b, where a and b are both real numbers. For example, a numerical range of "35-75" indicates that all real numbers between "35-75" have been listed herein, and "35-75" is only a shorthand representation of the combination of these numbers. The "ranges" disclosed herein may have one or more lower limits and one or more upper limits, respectively, in the form of lower limits and upper limits.
All percentages (including mass percentages) stated herein are based on the total weight of the composition, unless otherwise specified. That is, the percentages (%) both refer to mass percentages relative to the composition. Herein, percentages, ratios or parts referred to are by weight unless otherwise indicated. For example 35-75%, and may be expressed as 35-75 wt%.
Just as background art says, the main grid line and the auxiliary grid line have the problem such as reliable inadequately of connection in the grid line structure of current battery, and easy corruption has increased the decay of battery in damp and hot process, can't satisfy the requirement. The present cell grid line structure is described in detail by taking an N-type solar cell as an example, and it should be understood that other related or similar cell grid line structures have the same or similar problems.
Generally, a solar cell has a front surface and a back surface opposite to each other, wherein the front surface is a surface receiving solar rays and is a light-receiving surface, and the back surface is opposite to the front surface and is a backlight surface. The grid line structure of the N-type battery can comprise a front grid line structure and a back grid line structure. The grid line structure of the N-type cell will be mainly described in detail below by taking the front grid line structure as an example, while the back grid line structure may have the same or similar structure, and will not be described in detail herein. The existing N-type battery generally adopts a main grid line and an auxiliary grid line to be separately printed, wherein the main grid line on the front surface can use non-etching silver paste without burning through a silicon nitride film so as to keep the front surface to have higher open voltage; and the front auxiliary grid line can use burn-through silver-aluminum paste, and silicon nitride, aluminum oxide and PN junction are corroded after sintering to form good ohmic contact. The silver paste and the silver-aluminum paste both contain glass powder (glass frit), and the existing glass powder used in the gate line paste is generally classified into a lead-containing system and a lead-free system, wherein the lead-containing glass powder system generally comprises lead oxide (PbO) and boron oxide (B)2O3) Silicon oxide (SiO)2) And an organic or inorganic system, and uniform and fine silver microcrystals are formed at a silicon interface during sintering, so that good ohmic contact of the electrode is realized. And the conversion efficiency of the slurry of the lead-free system is lower than that of the slurry of the lead-containing system.
The existing photovoltaic module solder strip mainly comprises a copper (Cu) base strip and tin-lead (Sn-Pb) coated on the surface of the copper (Cu) base strip, and under a long-term damp and hot environment, the module solder strip and a battery metalized grid line are easy to generate electrochemical corrosion, so that the electrical performance of the module is poor, and the power attenuation is increased. Particularly, after the assembly welding strip is welded with the main grid line, the main grid line on the front side is corroded through a damp-heat process, so that the main grid line and the auxiliary grid line are connected abnormally, the series resistance is increased, the current is reduced, and the power of the assembly is reduced. The inventors found that the main causes of this problem are: since the paste used for the front-side busbar was silver-aluminum paste containing a small amount of aluminum (standard electrode potential of aluminum is-1.66V), the degree of corrosion was higher relative to silver (standard electrode potential of silver is + 0.779V). In addition, if a lead-free solder strip (lead with a standard electrode potential of-0.126V) is used for the component solder strip and a lead-free paste is used for the battery grid line paste, the battery efficiency is relatively low, and certain adverse effects are generated on the component soldering. In addition, the standard potential difference between silver and aluminum is large, and certain loss is easily caused in a damp and hot environment; meanwhile, the electrode potential of tin (the standard electrode potential of tin is-0.136V) and lead is also low and is easy to oxidize.
In view of this, the invention mainly starts from element collocation in the slurry and electrochemical reaction of contact between the solder strip and the grid line, increases the connection between the main grid line and the auxiliary grid line, reduces the corrosion of the electrochemical reaction on the grid line, and better inhibits the influence of the increase of the series resistance and the reduction of the current collection capability.
Specifically, in some embodiments, there is provided a solar cell grid line structure comprising:
a main gate line;
the first paste for the auxiliary grid line comprises a first glass frit and an aluminum or aluminum-containing material, the first glass frit comprises a first metal oxide, the standard electrode potential of metal in the first metal oxide is more than or equal to 0.3V (not less than 0.3V), and the mass content of the first metal oxide in the first glass frit is more than or equal to 35% (not less than 35% and less than 100%);
the auxiliary grid line part is arranged above the main grid line, and the height of the main grid line is more than or equal to 12 micrometers (not less than 12 micrometers).
The solar cell grid line structure provided by the embodiment of the invention is mainly based on element collocation in the grid line slurry and electrochemical reaction of contact between a welding strip and the grid line, the content of lead oxide in the first slurry for the auxiliary grid line is reduced, namely the content of the lead oxide with negative potential in the first glass material in the first slurry is reduced, the lead oxide in the first glass material is optional, namely the first glass material can contain lead oxide or does not contain lead oxide, the content of the lead oxide is lower when the lead oxide is contained, and the content of the first metal oxide with positive potential is increased, so that the content of substances which are easy to oxidize is reduced, the content of substances which are difficult to oxidize is increased, and the electrochemical corrosion effect of the cell grid line is slowed down. Meanwhile, the auxiliary grid line part is arranged above the main grid line, so that the height of the main grid line is increased, the corrosion of the contact part of the component welding strip and the main grid line can be slowed down, a dual protection effect is achieved, and when the auxiliary grid line contains lead oxide and is corroded, the main grid line can also play a role in collecting current and ensuring electric connection.
In detail, in the solar cell grid line structure, on one hand, the paste for forming the auxiliary grid line comprises a first paste, the first paste comprises a first glass material and a small amount of aluminum or an aluminum-containing material, wherein the electrode potential of the aluminum or the aluminum-containing material is low and is easily oxidized or corroded, so that the composition of the first paste, particularly the first glass material in the first paste, needs to be adjusted. In the embodiment of the invention, the first metal oxide with the standard electrode potential of more than or equal to 0.3V and containing metal is contained in the first glass material, the electrode potential is more difficult to oxidize or corrode, the content of the first metal oxide is increased, the mass content of the first metal oxide in the first glass material is more than or equal to 35% (and less than 100%), and the content of lead oxide with negative potential in the glass material is reduced, so that the glass material can contain no lead oxide or only a small amount of lead oxide. Therefore, by improving the proportion of a certain metal oxide in the first glass frit in the first paste, particularly improving the proportion of the metal oxide with the standard electrode potential of metal not lower than 0.3V, the mass proportion of the metal oxide in the first glass frit is not lower than 35%, the electrochemical corrosion of the auxiliary grid line can be slowed down, the main grid line and the auxiliary grid line which are printed step by step can be better connected, and the attenuation of the battery in the wet and hot process is reduced.
On the other hand, the auxiliary grid line is partially arranged above the main grid line, namely, the auxiliary grid line is printed on the main grid line, and the height of the main grid line is increased, so that the height of the main grid line is not less than 12 micrometers, the corrosion of elements such as electrochemical reaction lead-tin and the like on a contact part with a component welding strip to the battery grid line can be reduced, the attenuation phenomenon caused by the deterioration of the contact performance of the battery grid line due to the corrosion effect and the reduction of the current collection capacity is reduced, the dual protection effect can be achieved, when the auxiliary grid line contains lead oxide and is corroded, the small conductivity of the glass material erosion of the main grid line is basically not influenced, the main grid line can also play a role in collecting current to ensure the electric connection, and the damp-heat attenuation is reduced. Therefore, the solar cell grid line structure increases the connection between the main grid line and the auxiliary grid line through the adjustment of the component composition of the first slurry for the auxiliary grid line, the position arrangement of the auxiliary grid line and the main grid line and the adjustment of the height of the main grid line and the cooperative cooperation of the auxiliary grid line and the main grid line, reduces the corrosion of electrochemical reaction on the grid line, well inhibits the influence of the increase of the series resistance and the reduction of the current collecting capacity, and can reduce the attenuation of a photovoltaic module in a damp and hot environment.
The aluminum or aluminum-containing material refers to aluminum or aluminum-containing compound or mixture, for example, the aluminum-containing material may be aluminum-containing alloy, aluminum oxide, etc., and the specific type of the aluminum-containing material is not limited in the embodiment of the present invention.
The standard electrode potential of the metal in the first metal oxide is not less than 0.3V, and for example, the standard electrode potential of the metal may be 0.3V to 0.35V, 0.3V to 0.4V, 0.3V to 0.5V, 0.3V to 0.6V, 0.3V to 0.7V, or the like.
The mass content of the first metal oxide is not less than 35% based on the total mass of the first glass frit, and for example, the mass content of the first metal oxide may be 35% to 75%, may be 35% to 70%, may be 35% to 65%, may be 35% to 60%, may be 40% to 75%, may be 45% to 75%, or the like.
The height of the main grid line is larger than or equal to 12 μm, for example, the height of the main grid line can be 12-30 μm, 12-25 μm, 12-20 μm, 12-18 μm, 12-16 μm, 12-14 μm, 14-16 μm, 14-18 μm and the like.
In some embodiments, the solar cell grid line structure is a front side grid line structure or a back side grid line structure. Preferably, the solar cell grid line structure is a front grid line structure. The solar cell front grid line structure comprises a grid line electrode structure formed by weaving main grid lines and auxiliary grid lines into a net shape.
The power attenuation of the front side of the N-type solar cell or the N-type photovoltaic module is higher than that of the back side of the module after long-term damp and hot process; in addition, the front contact resistivity of the N-type solar cell is higher than that of the back of the N-type solar cell after long-term wet and hot process. Thus, there is a particular need for improvements in the front grid line structure of solar cells. Therefore, the solar cell grid line structure of the embodiment of the invention is preferably a front grid line structure.
In some embodiments, the second paste forming or used for the bus bars may be a non-fire through type silver paste. The first paste for forming or for the busbar may be a fire-through silver-aluminum paste.
In some embodiments, the first metal oxide includes, but is not limited to, at least one of tellurium oxide, bismuth oxide, or copper oxide. The first metal oxide may be tellurium oxide (TeO)2) May be bismuth oxide (Bi)2O3) The copper oxide (CuO) can also be used, or the mixture of any two or three of the above oxides can be used in any proportion. Wherein the standard electrode potential of bismuth is +0.308V, the standard electrode potential of copper is +0.34V, and the standard electrode potential of tellurium is + 0.53V. In addition, in other embodiments, the metal oxide may also be a metal oxide having an electrode potential of not less than 0.3V with other metal elements, which can be applied to the gate line paste and does not limit the object of the present invention.
The mass content of the first metal oxide in the first glass frit is 35-75% based on the total mass of the first glass frit. The content of the first metal oxide in the first frit can be maximized as compared to the remaining components in the first frit, which helps to slow down corrosion of the cell grid line by increasing the content of the first metal oxide in the first frit. Typically, but not by way of limitation, the first metal oxide content can be, for example, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, and any value in the range of any two of these values. Within the content range, the method is favorable for reducing the cost and slowing down the corrosion of the grid line of the battery. On one hand, if the content of the first metal oxide is low, the corrosion effect of the grid line of the battery cannot be achieved or is reduced; on the other hand, if the content of the first metal oxide is too high, the addition of the remaining components in the frit is affected, the cost is increased, or other properties of the frit may be affected.
Preferably, in some embodiments, the first metal oxide is bismuth oxide, and the content of the bismuth oxide in the first glass frit is 35% to 75% by mass, and further may be 45% to 75% by mass.
In some embodiments, the first glass frit comprises bismuth oxide and lead oxide, wherein the mass content of bismuth oxide is 35% to 75% and the mass content of lead oxide is 0 to 15% (including 0). That is, the first glass frit may not contain lead oxide and the mass content of lead oxide is 0, or the first glass frit may contain lead oxide and the mass content of lead oxide is not more than 15%.
The first glass frit comprises bismuth oxide, and the content of bismuth oxide is high, preferably between 45% and 75%. The first glass material may or may not contain lead oxide, and when the first glass material contains lead oxide, the content of the lead oxide is low, and the mass content of the lead oxide is preferably less than or equal to 15%. The first glass material in the first slurry for the front auxiliary grid line adopts glass material with high bismuth oxide and low lead oxide content.
The burn-through slurry for the auxiliary grid line on the front surface of the battery adopts bismuth oxide which is similar to lead oxide in the aspects of viscosity, transition temperature, thermal expansion coefficient and the like and plays a role of a fluxing agent. And the standard electrode potential of bismuth is about +0.308V, which is lower than the negative standard electrode potential of lead, tin and the like, so that the bismuth is difficult to oxidize, and the electrochemical corrosion of the auxiliary grid line of the battery can be slowed down. In addition, the resistivity of the glass body can be increased along with the increase of the content of bismuth oxide in the first glass material of the auxiliary grid line on the front surface of the battery, and the melt flowability is poor along with the decrease of the content of bismuth oxide, so that the density of a silver film is reduced.
Therefore, the first glass frit adopts the glass frit with high bismuth oxide and low lead oxide content, can reduce or slow down the corrosion of electrochemistry to grid lines, and can still enable the battery efficiency to be relatively high without containing lead oxide, and can not generate adverse effect on component welding.
The first frit may include other metal oxides, additives or additives, etc. in addition to the first metal oxide, such as bismuth oxide and optionally lead oxide, to optimize the properties of the first frit. For example, in some embodiments, the first frit comprises the following components in mass:
35-75% of first metal oxide, 0-15% of lead oxide, 8-20% of boron oxide, 3-7% of zinc oxide and 5-8% of silicon powder; wherein the first metal oxide is bismuth oxide.
In the first glass material, a certain amount of silicon powder is added in the formula, so that the sintering is more uniform. When the aluminum-silicon alloy powder is added into the first slurry, the silicon content in the aluminum-silicon alloy powder can be increased through the addition of the silicon powder, so that the melting point of the aluminum-silicon alloy powder is increased, and the corrosion effect on a silicon substrate is reduced. The addition of zinc oxide can facilitate electron transport. In addition, the silicon wafer can be doped by adding boron, and the carrier density is increased to a certain extent.
It is noted that to further improve the properties of the first frit, the first frit may include other ingredients in addition to the first metal oxide, such as bismuth oxide and optionally lead oxide, to improve the properties desired or needed for any particular application, e.g., the first frit may also include boron oxide, zinc oxide, silicon powder, and the like. In addition, in other embodiments, the first glass frit may not include zinc oxide, or may also optionally add other acceptable additives or auxiliary materials, and the specific type or the adding amount of the additives or auxiliary materials in the embodiments of the present invention is not particularly limited, and may be controlled by those skilled in the art according to actual situations, for example, performance additives or auxiliary materials that are expected or needed may be added according to actual application scenarios or product requirements, as long as the purpose of the present invention is not limited and the electrode grid lines are not affected.
In the first frit, the content of bismuth oxide is, for example, 35 to 75% by mass, typically, but not limited to, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75% by mass, or any value in a range of any two of these values, based on the total mass of the first frit. The lead oxide content is 0 to 15% by mass, and typically, but not limited to, may be, for example, 0, 1%, 2%, 3%, 4%, 5%, 6%, 8%, 10%, 12%, 14%, 15%, or any value in the range of any two of these values. The boron oxide content is 8 to 20% by mass, and may be, for example, typically but not limited to, 8%, 9%, 10%, 12%, 14%, 15%, 16%, 18%, 20% by mass or any value in the range of any two of these values. The zinc oxide content is 3 to 7% by mass, and typically, but not limited to, it may be, for example, 3%, 4%, 5%, 6%, 7%, or any value in a range formed by any two of these values. The mass content of the silicon powder is 5 to 8%, and typically, but not limited to, for example, 5%, 6%, 7%, 8%, or any value in a range of any two of these values.
The method for preparing the first glass frit is not particularly limited, and any method known to those skilled in the art may be used. For example, the raw materials can be mixed uniformly, then the mixed materials can be completely melted into molten glass in a high-temperature furnace, then the molten glass is poured into a rolling machine to form glass sheets, and then the glass sheets are crushed into glass powder.
In some embodiments, the median particle size of the first frit may be on the order of nanometers, such as 20-500 nm, 50-300 nm, 100-200 nm, 150-400 nm, etc.
The first paste for the busbar may be a fire-through type silver-aluminum paste, which may include silver powder and an organic vehicle or organic component, etc., in addition to the above-described first glass frit and aluminum or aluminum-containing material. For example, in some embodiments, the first slurry comprises the following components in mass content:
75% -88% of silver powder, 1% -4% of aluminum or aluminum-containing material, 1% -5% of first glass frit and 8% -13% of first organic carrier.
Wherein, the aluminum-containing material can be aluminum oxide or aluminum-silicon alloy powder. The aluminum-silicon alloy powder can provide metal aluminum for the paste of the front auxiliary grid line of the solar cell, endows the auxiliary grid line with the functions of conducting electricity and collecting current, and improves the compatibility with the surface of the solar cell and the adhesive force due to the existence of silicon.
The first organic carrier is used as a carrier of the paste, so that silver powder, aluminum or aluminum-containing materials, the first glass frit and other solid substances are uniformly dispersed in the paste, the paste can be stably stored, the necessary fluidity required by the paste is ensured, and a high-performance auxiliary grid line can be obtained in the printing process. The embodiment of the present invention does not limit the specific type, source, and the like of the first organic vehicle, and may select an organic system commonly used in conductive paste known in the art; if it is commercially available, it can be prepared by itself by a method known to those skilled in the art. For example, the first organic vehicle may include an organic resin, a binder, a dispersant, a solvent, etc., or the first organic vehicle may include an organic solvent, a thickener, an optionally added auxiliary agent, etc., which are not limited in this embodiment of the present invention and will not be described in detail herein.
In the first paste, the content of the silver powder may be 75% to 88% by mass, and may be 85% to 88% by mass, based on the total mass of the first paste, and may typically, but not exclusively, be 75%, 76%, 78%, 80%, 82%, 84%, 85%, 86%, 87%, 88%, and any value within a range defined by any two of these points. The aluminum or the aluminum-containing material may be contained in an amount of 1 to 4% by mass, further 2 to 4% by mass, and typically, but not limited to, 1%, 1.5%, 2%, 2.5%, 3%, 4% by mass, and any value in a range formed by any two of these points. The mass content of the first glass frit is 1 to 5%, and further may be 2 to 4%, and typically, but not limited to, for example, 1%, 1.5%, 2%, 2.5%, 3%, 4%, 5%, and any value in a range formed by any two of these points. The mass content of the first organic vehicle is 8 to 13%, and further may be 8 to 11%, and typically, but not limited to, may be, for example, 8%, 9%, 10%, 11%, 12%, 13%, and any value in a range formed by any two of these points.
By adopting the first sizing agent with the components and the content and the first glass material with the components and the content, the sizing agent with proper viscosity can be obtained, the auxiliary grid line sizing agent has good shaping performance and good printing performance, the auxiliary grid line obtained by printing has good adhesion performance, and the conversion efficiency can be improved.
On the basis of adjusting the composition or content of the first glass frit in the first paste for the auxiliary grid line, the composition or content of the second glass frit in the second paste for the main grid line is adjusted in a matched manner, so that the corrosion of the grid line of the battery can be relieved, and the connection between the main grid line and the auxiliary grid line can be increased. Specifically, in some embodiments, the second paste for the bus bar includes a second glass frit including tellurium oxide, and the tellurium oxide is included in the second glass frit in an amount of 30% to 65% by mass, further 35% to 65% by mass, further 40% to 65% by mass. The tellurium oxide has better electrical property and is beneficial to the sintering process of the silver paste.
In the embodiment of the invention, the content of the lead oxide used for the first glass frit in the auxiliary grid line is reduced by increasing the content of the tellurium oxide used for the second glass frit in the main grid line by the boron enlarged surface, the content of the first metal oxide such as bismuth oxide in the first glass frit is increased, and the better connection between the main grid line and the auxiliary grid line which are printed step by step can be realized by regulating or perfecting the component composition of the first glass frit and the second glass frit, so that the attenuation of a battery in the damp-heat process is reduced.
The second glass frit may include other oxides or additives or auxiliary materials or additives, etc. in addition to tellurium oxide, and the content of tellurium oxide in the second glass frit may be maximized compared to other components. Specifically, in some embodiments, the second frit comprises the following components in mass content:
35-65% of tellurium oxide, 15-20% of boron oxide and 0-5% of zinc oxide.
In the second frit, the content of tellurium oxide is, for example, 30% to 65% by mass, further 35% to 65% by mass, further 45% to 65% by mass, and typically, but not limited to, 30%, 32%, 35%, 40%, 42%, 45%, 50%, 55%, 60%, 65% by mass, and any value in a range of any two of these points, based on the total mass of the second frit. The boron oxide content is 15 to 20% by mass, and typically, but not limited to, for example, 15%, 16%, 17%, 18%, 19%, 20%, and any value in the range of any two of these values. The zinc oxide is contained in an amount of 0 to 5% by mass, and typically, but not limited to, for example, 0%, 1%, 2%, 3%, 4%, 5%, or any value in a range formed by any two of these values.
Therefore, in the above range, by increasing the content of bismuth oxide in the first glass frit, reducing the content of lead oxide in the first glass frit and increasing the content of tellurium oxide in the second glass frit, the corrosion of electrochemical reaction on a battery grid line structure can be slowed down or reduced, the connection between the main grid line and the auxiliary grid line is increased, and the influence of the increase of the series resistance and the decrease of the current collection capacity is well inhibited.
The second paste for the main gate line may be a non-fire through type silver paste, and may include silver powder and an organic vehicle or an organic component, etc., in addition to the above-described second glass frit. For example, in some embodiments, the second slurry comprises the following components in mass content:
88% -92% of silver powder, 2% -4% of second glass frit and 8% -10% of second organic carrier.
The second organic carrier is used as a carrier of the paste, so that silver powder, second glass frit and other substances are uniformly dispersed in the paste, the paste can be stably stored, the necessary fluidity required by the paste is ensured, and a high-performance main grid line can be obtained in the printing process. The embodiment of the present invention does not limit the specific type, source, and the like of the second organic vehicle, and may select an organic system commonly used in conductive paste known in the art; if it is commercially available, it can be prepared by itself by a method known to those skilled in the art. For example, the second organic vehicle may include an organic resin, a binder, a dispersant, a solvent, etc., or the second organic vehicle may include an organic solvent, a thickener, an optionally added auxiliary agent, etc., which are not limited in this embodiment of the present invention and will not be described in detail herein.
In the second paste, the content of the silver powder may be 88% to 92% by mass, and may be 88% to 91% by mass, based on the total mass of the second paste, and may typically, but not limited to, be 88%, 89%, 90%, 91%, 92% by mass, and any value in a range of any two of these values. The second frit material is present in an amount of 2 to 4% by mass, and typically, but not limited to, for example, 2%, 2.5%, 3%, 3.5%, 4% by mass, and any value in the range of any two of these values. The second organic carrier is present in an amount of 8-10% by mass, typically but not limited to, for example, 8%, 9%, 10% by mass, and any value within the range defined by any two of these values.
In order to better realize the increase of the connection between the main grid line and the auxiliary grid line, reduce the corrosion of electrochemical reaction on the grid line, and better inhibit the influence of the increase of the series resistance and the reduction of the current collection capability, part of the auxiliary grid line is overlapped on the main grid line, and the height of the main grid line is increased, so that the height of the sintered main grid line is more than or equal to 12 microns. Specifically, in some embodiments, as shown in fig. 1, the height of the bus bar 81 is 12 to 14 micrometers, or the height of the bus bar 81 is 14 to 16 micrometers. Typically, but not limitatively, the height of the bus bar 81 may be, for example, 12 μm, 13 μm, 14 μm, 15 μm, 16 μm, or the like.
The specific implementation of increasing the height of the bus bar can be of various types. For example, the grid line printing can use a screen plate with a high line diameter and increased emulsion thickness, and the purpose of increasing the thickness of the grid line is achieved through a screen printing mode.
According to the battery grid line structure, the auxiliary grid line is printed on the main grid line, and lead oxide in the auxiliary grid line does not enter a passivation layer below the main grid line after sintering at the joint of the main grid line and the auxiliary grid line; under the condition that the auxiliary grid line is corroded, the conductivity is basically not influenced when the glass material of the main grid line is corroded; the current collection capability is better, and the damp-heat attenuation is lower.
Particularly, experiments prove that the height of the main grid line is not less than 12 microns, for example, in the range of 12-14 microns or 14-16 microns, the connection of the main grid line and the auxiliary grid line can be better increased, the corrosion of electrochemical reaction to the grid line is reduced, the influence of the increase of the series resistance and the reduction of the current collection capacity is better inhibited, and therefore the attenuation of the photovoltaic module in a damp and hot environment can be reduced or slowed down.
In some embodiments, as shown in fig. 1 or fig. 2, the height from the center of the intersection region of the auxiliary gate line 82 and the main gate line 81 to the PN junction 61 is greater than or equal to 7 micrometers, further greater than or equal to 10 micrometers, further greater than or equal to 12 micrometers, further greater than or equal to 14 micrometers, and the like. Therefore, the connection between the main grid line 81 and the auxiliary grid line 82 can be increased, the corrosion of the electrochemical reaction to the grid lines is reduced, and the influence of the increase of the series resistance and the reduction of the current collection capability is well inhibited.
In the embodiment of the present invention, the specific number of the main gate lines 81 and the auxiliary gate lines 82 is not limited, and is generally a plurality of main gate lines 81, a plurality of auxiliary gate lines 82 and a plurality of auxiliary gate lines 81 are arranged in parallel at intervals.
Embodiments of the present application also provide a photovoltaic module, comprising a plurality of solar cells, the solar cells comprising the solar cell grid line structure as described above.
It can be understood by those skilled in the art that the photovoltaic module and the foregoing solar cell grid line structure are based on the same inventive concept, and the features and advantages described above for the solar cell grid line structure are also applicable to the application of the photovoltaic module, and are not described herein again.
In some embodiments, the solar cell is an N-type cell.
Illustratively, as shown in fig. 3, the solar cell provided in the embodiment of the present application is a TOPCon cell, the solar cell includes a silicon substrate 1, the silicon substrate 1 includes a front surface and a back surface which are oppositely disposed, and the back surface of the silicon substrate 1 is formed with a tunneling oxide layer 2, a doped crystalline silicon layer 3, a back passivation layer 4 and a back gate line electrode 5; the front surface of the silicon substrate 1 is provided with a diffusion layer 6, a front passivation layer and/or an antireflection layer 7 and a front grid line electrode 8.
It should be noted that, the specific structure of the solar cell is not limited in the embodiments of the present invention, and the structure of the solar cell is exemplified above, however, in other embodiments, the solar cell may have other structural forms.
The preparation process and the manufacturing steps of the photovoltaic module or the solar cell can be common known manufacturing steps of the photovoltaic module or the solar cell, and the embodiment of the invention is not particularly limited to the preparation of the photovoltaic module or the solar cell. For example, the solar cell may be prepared by:
(1) providing an N-type silicon substrate, and performing texturing treatment on the N-type silicon substrate.
Among them, the texturing treatment may be performed using an alkaline solution such as a potassium hydroxide solution; the light trapping effect is enhanced, the utilization rate of light is improved, and the efficiency of the passivation contact solar cell is improved.
(2) And B diffusing the front surface of the textured silicon substrate to form a diffusion layer on the front surface of the semiconductor substrate.
The sheet resistance of the boron diffusion layer may be 100-260 ohm/sqr.
(3) The BSG layer (borosilicate glass layer) on the surface of the silicon substrate is removed, for example, by wet chemical method.
After the BSG layer is removed, the weight of the silicon substrate can be reduced by 0.18g-0.25 g.
(4) And growing a tunneling oxide layer and depositing a polycrystalline silicon layer (or an amorphous silicon layer) on the back surface of the silicon substrate.
For example, a tunnel oxide layer may be prepared by a thermal oxidation method, a wet oxidation method, an ozone oxidation method, or the like; the deposition of the polysilicon layer may be performed using low pressure chemical vapor deposition or other deposition methods.
Wherein, the thickness of the tunneling oxide layer is preferably 1-2nm, and the thickness of the polysilicon layer is preferably less than 200 nm.
(5) And performing phosphorus diffusion and high-temperature annealing to form a doped crystalline silicon layer on the surface of the tunneling oxide layer.
(6) And (4) unwinding and plating.
The winding-plating polycrystalline silicon layer with the front boron-expanded surface can be removed by adopting mixed acid, diluted alkali and the like, so that the yield and the efficiency of the battery are ensured, and the influence of poor appearance of the battery is avoided.
(7) And respectively carrying out passivation treatment on the front surface and the back surface of the silicon substrate.
Various passivation techniques known in the art can be used for passivation, for example, a passivation layer can be deposited by plasma enhanced chemical vapor deposition, but other methods can also be used, for example, organic chemical vapor deposition, etc.
Illustratively, the front passivation layer and/or the anti-reflective layer and the back passivation layer may include one or more of aluminum oxide, silicon nitride, silicon oxide, silicon oxynitride, silicon carbide, and the like. The thicknesses of the front passivation layer and/or the antireflection layer and the back passivation layer are respectively less than 120 nm.
(8) And respectively carrying out screen printing, sintering and annealing on the front side and the back side of the silicon substrate to complete metallization.
The metal electrode is printed in a mode of separately printing materials of the front main grid line and the auxiliary grid line, and the metal electrode is printed in a mode of separately printing materials of the back main grid line and the auxiliary grid line.
For example, the printing sequence may be, in order, printing the back side bus bar, printing the front side bus bar, and printing the front side bus bar.
(9) Battery parameter testing and grading testing.
In order to facilitate understanding of the present invention, the present invention will be further described below with reference to specific examples and comparative examples. In the following examples, since the results obtained were similar for the content ranges of the components in the first slurry and the second slurry, the content of the components in the first slurry and the second slurry are expressed as ranges; the following examples are primarily directed to the first and second frits and the height control of the bus bars.
Example 1
A solar cell grid line structure comprises a main grid line and an auxiliary grid line;
the first slurry for the auxiliary grid line comprises the following components in percentage by mass: 75-88% of silver powder, 1-4% of aluminum oxide or aluminum-silicon alloy powder, 1-5% of first glass frit and 8-13% of first organic carrier; the first glass frit comprises the following components in percentage by mass: 55% of bismuth oxide, 0% of lead oxide, 15% of boron oxide, 4% of zinc oxide, 6% of silicon powder and other substances;
the second slurry for the auxiliary grid line comprises the following components in percentage by mass: 88% -92% of silver powder, 2% -4% of second glass frit and 8% -10% of second organic carrier; the second glass material comprises the following components in percentage by mass: 50% of tellurium oxide, 20% of boron oxide, 0.5% of zinc oxide and other substances.
Wherein, the auxiliary grid line part is arranged above the main grid line, and the height of the main grid line is 12-14 μm.
The DH600h efficiency decay test was performed on an N-type solar cell comprising the solar cell grid line structure of example 1. The test results showed that the cell efficiency of DH600h decayed by 2.8%.
Example 2
Example 2 differs from example 1 only in that: the height of the main grid line is 14-16 μm.
The rest is the same as in example 1.
The DH600h efficiency decay test was performed on an N-type solar cell comprising the solar cell grid line structure of example 2. The test results showed that the cell efficiency of DH600h decayed by 2.5%.
As can be seen from a comparative analysis of example 2 with example 1, the increase in height of the bus bars, which preferably ranges from 14 to 16 μm, helps to slow down the cell fade efficiency. However, the height of the main grid lines is further increased to enable the height of the main grid lines to be more than 16 microns, and the effect of slowing down the attenuation of the efficiency of the battery is not obvious.
Comparative example 1
Comparative example 1 differs from example 1 only in that: the first glass material comprises the following components in percentage by mass: 0% of bismuth oxide, 55% of lead oxide, 15% of boron oxide, 4% of zinc oxide, 6% of silicon powder and other substances.
The rest is the same as in example 1.
The DH600h efficiency decay test was performed on the N-type solar cell including the solar cell grid line structure of comparative example 1. The test results showed that the cell efficiency of DH600h decayed by 4.9%.
As can be seen from the comparative analysis of comparative example 1 with example 1, comparative example 1 decreased the content of bismuth oxide, in which bismuth oxide was not contained, and comparative example 1 contained lead oxide, and the content of lead oxide was high, thereby increasing the cell efficiency deterioration.
Comparative example 2
Comparative example 2 differs from example 1 only in that: the first glass material comprises the following components in percentage by mass: 10% of bismuth oxide, 45% of lead oxide, 15% of boron oxide, 4% of zinc oxide, 6% of silicon powder and other substances.
The rest is the same as in example 1.
The DH600h efficiency decay test was performed on the N-type solar cell including the solar cell grid line structure of comparative example 2. The test results showed that the cell efficiency of DH600h decayed by 4.5%.
As can be seen from the comparative analysis of comparative example 2 with example 1, comparative example 2 contains both bismuth oxide and lead oxide, and the content of lead oxide is higher than that of bismuth oxide, and comparative example 2 reduces the content of bismuth oxide, which contains bismuth oxide in an amount of 10%, thereby increasing the degradation of the efficiency of the battery.
Comparative example 3
Comparative example 3 differs from example 1 only in that: the first glass material comprises the following components in percentage by mass: 25% of bismuth oxide, 30% of lead oxide, 15% of boron oxide, 4% of zinc oxide, 6% of silicon powder and other substances.
The rest is the same as in example 1.
The DH600h efficiency decay test was performed on the N-type solar cell including the solar cell grid line structure of comparative example 3. The test results showed that the cell efficiency of DH600h decayed by 4.2%.
As can be seen from the comparative analysis of comparative example 3 with example 1, comparative example 3 contains both bismuth oxide and lead oxide, and the content of lead oxide is higher than that of bismuth oxide, and comparative example 3 reduces the content of bismuth oxide, which contains 25% but still less than 35% of bismuth oxide, thereby increasing the degradation of the efficiency of the battery.
Comparative example 4
Comparative example 4 differs from example 1 only in that: the second glass material comprises the following components in percentage by mass: 20% of tellurium oxide, 30% of bismuth oxide, 20% of boron oxide, 0.5% of zinc oxide and other substances.
The rest is the same as in example 1.
The DH600h efficiency decay test was performed on the N-type solar cell including the solar cell grid line structure of comparative example 4. The test results showed that the cell efficiency of DH600h decayed by 5.0%.
As can be seen from a comparative analysis of comparative example 4 with example 1, comparative example 4 decreased the content of tellurium oxide in the second frit in the bus bar, thereby increasing the cell efficiency degradation.
Comparative example 5
Comparative example 5 differs from example 1 only in that: the height of the main grid line is 8-10 μm.
The rest is the same as in example 1.
The DH600h efficiency decay test was performed on the N-type solar cell including the solar cell grid line structure of comparative example 5. The test results showed that the cell efficiency of DH600h decayed by 5.2%.
As can be seen from the comparative analysis of comparative example 5 with example 1, comparative example 5 decreased the height of the bus bar, and thus, increased the cell efficiency degradation.
Example 3
A solar cell grid line structure comprises a main grid line and an auxiliary grid line;
the first slurry for the auxiliary grid line comprises the following components in percentage by mass: 75-88% of silver powder, 1-4% of aluminum oxide or aluminum-silicon alloy powder, 1-5% of first glass frit and 8-13% of first organic carrier; the first glass frit comprises the following components in percentage by mass: 35% of bismuth oxide, 5% of lead oxide, 10% of boron oxide, 3% of zinc oxide, 5% of silicon powder and other substances;
the second slurry for the auxiliary grid line comprises the following components in percentage by mass: 88% -92% of silver powder, 2% -4% of second glass frit and 8% -10% of second organic carrier; the second glass material comprises the following components in percentage by mass: 65% of tellurium oxide, 15% of boron oxide, 0% of zinc oxide and other substances.
Wherein, the auxiliary grid line part is arranged above the main grid line, and the height of the main grid line is 12-14 μm.
The DH600h efficiency decay test was performed on an N-type solar cell comprising the solar cell grid line structure of example 3. The test results showed that the cell efficiency of DH600h decayed by 3.3%.
Example 4
A solar cell grid line structure comprises a main grid line and an auxiliary grid line;
the first slurry for the auxiliary grid line comprises the following components in percentage by mass: 75-88% of silver powder, 1-4% of aluminum oxide or aluminum-silicon alloy powder, 1-5% of first glass frit and 8-13% of first organic carrier; the first glass frit comprises the following components in percentage by mass: 75% of bismuth oxide, 2% of lead oxide, 8% of boron oxide, 3% of zinc oxide, 5% of silicon powder and other substances;
the second slurry for the auxiliary grid line comprises the following components in percentage by mass: 88% -92% of silver powder, 2% -4% of second glass frit and 8% -10% of second organic carrier; the second glass material comprises the following components in percentage by mass: 40% of tellurium oxide, 20% of boron oxide, 5% of zinc oxide and other substances.
Wherein, the auxiliary grid line part is arranged above the main grid line, and the height of the main grid line is 12-14 μm.
The DH600h efficiency decay test was performed on an N-type solar cell comprising the solar cell grid line structure of example 4. The test results showed that the cell efficiency of DH600h decayed by 3.1%.
Example 5
A solar cell grid line structure comprises a main grid line and an auxiliary grid line;
the first slurry for the auxiliary grid line comprises the following components in percentage by mass: 75-88% of silver powder, 1-4% of aluminum oxide or aluminum-silicon alloy powder, 1-5% of first glass frit and 8-13% of first organic carrier; the first glass frit comprises the following components in percentage by mass: 52% of bismuth oxide, 10% of lead oxide, 10% of boron oxide, 7% of zinc oxide, 8% of silicon powder and other substances;
the second slurry for the auxiliary grid line comprises the following components in percentage by mass: 88% -92% of silver powder, 2% -4% of second glass frit and 8% -10% of second organic carrier; the second glass material comprises the following components in percentage by mass: 58% of tellurium oxide, 18% of boron oxide, 3% of zinc oxide and other substances.
Wherein, the auxiliary grid line part is arranged above the main grid line, and the height of the main grid line is 14-16 μm.
The DH600h efficiency decay test was performed on an N-type solar cell comprising the solar cell grid line structure of example 5. The test results showed that the cell efficiency of DH600h decayed by 3.0%.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
It is noted that a portion of this patent application contains material which is subject to copyright protection. The copyright owner reserves the copyright rights whatsoever, except for making copies of the patent files or recorded patent document contents of the patent office.
Claims (10)
1. A solar cell grid line structure, comprising:
a main gate line;
the first sizing agent for the auxiliary grid line comprises a first glass material and an aluminum or aluminum-containing material, the first glass material comprises a first metal oxide, the standard electrode potential of metal in the first metal oxide is more than or equal to 0.3V, and the mass content of the first metal oxide in the first glass material is more than or equal to 35%;
the auxiliary grid line is partially arranged above the main grid line, and the height of the main grid line is larger than or equal to 12 microns.
2. The solar cell grid line structure of claim 1, wherein the first metal oxide comprises at least one of tellurium oxide, bismuth oxide, or copper oxide; and the mass content of the first metal oxide in the first glass frit is 35-75%.
3. The solar cell grid line structure of claim 2, wherein the first metal oxide is bismuth oxide, and the bismuth oxide is present in the first glass frit in an amount of 45% to 75% by weight.
4. The solar cell grid line structure of claim 1, wherein the first glass frit comprises the following components in mass:
35-75% of first metal oxide, 0-15% of lead oxide, 8-20% of boron oxide, 3-7% of zinc oxide and 5-8% of silicon powder;
wherein the first metal oxide is bismuth oxide.
5. The solar cell grid line structure of claim 1, wherein the second paste for the bus bar comprises a second glass frit, the second glass frit comprises tellurium oxide, and the tellurium oxide is present in the second glass frit in an amount of 30% to 65% by mass.
6. The solar cell grid line structure of claim 5, wherein the second glass frit comprises the following components by mass:
35-65% of tellurium oxide, 15-20% of boron oxide and 0-5% of zinc oxide.
7. The solar cell grid line structure of claim 5, wherein the second paste comprises the following components by mass:
88% -92% of silver powder, 2% -4% of second glass frit and 8% -10% of second organic carrier.
8. The solar cell grid line structure according to any one of claims 1 to 7, wherein the first paste comprises the following components in mass content:
75% -88% of silver powder, 1% -4% of aluminum or aluminum-containing material, 1% -5% of first glass frit and 8% -13% of first organic carrier.
9. The solar cell grid line structure of any one of claims 1-7, wherein the height of the bus bar line is from 12 microns to 14 microns, or the height of the bus bar line is from 14 microns to 16 microns;
the distance between the center of the intersection region of the auxiliary grid line and the main grid line and the PN junction is more than or equal to 7 microns.
10. A photovoltaic module comprising a plurality of solar cells, wherein the solar cells comprise the solar cell grid line structure of any of claims 1-9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210125921.5A CN114464690B (en) | 2020-08-28 | 2020-08-28 | Solar cell grid line structure and photovoltaic module |
| CN202010884545.9A CN112002772B (en) | 2020-08-28 | 2020-08-28 | Solar cell grid line structure and photovoltaic module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010884545.9A CN112002772B (en) | 2020-08-28 | 2020-08-28 | Solar cell grid line structure and photovoltaic module |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210125921.5A Division CN114464690B (en) | 2020-08-28 | 2020-08-28 | Solar cell grid line structure and photovoltaic module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112002772A CN112002772A (en) | 2020-11-27 |
| CN112002772B true CN112002772B (en) | 2022-03-08 |
Family
ID=73466009
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010884545.9A Active CN112002772B (en) | 2020-08-28 | 2020-08-28 | Solar cell grid line structure and photovoltaic module |
| CN202210125921.5A Active CN114464690B (en) | 2020-08-28 | 2020-08-28 | Solar cell grid line structure and photovoltaic module |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210125921.5A Active CN114464690B (en) | 2020-08-28 | 2020-08-28 | Solar cell grid line structure and photovoltaic module |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN112002772B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1207572A1 (en) * | 2000-11-15 | 2002-05-22 | Dr. Sugnaux Consulting | Mesoporous electrodes for electrochemical cells and their production method |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2921802B2 (en) * | 1990-05-07 | 1999-07-19 | キヤノン株式会社 | Method of removing short-circuited part of photoelectric conversion device |
| JP2010199034A (en) * | 2009-02-27 | 2010-09-09 | Dic Corp | Conductive paste for solar cell and manufacturing method therefor |
| CN102428568A (en) * | 2009-05-20 | 2012-04-25 | E.I.内穆尔杜邦公司 | Method for forming grid on front surface of silicon wafer |
| JP5856423B2 (en) * | 2011-09-30 | 2016-02-09 | 株式会社東芝 | Conductive material and electric element using the same |
| JP2015528178A (en) * | 2012-06-12 | 2015-09-24 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | Conductive paste with adhesion promoter |
| CN104752529B (en) * | 2013-12-30 | 2017-01-18 | 上海神舟新能源发展有限公司 | 3D printed tapered electrode structure of solar cell |
| CN104752533B (en) * | 2014-12-31 | 2017-04-12 | 苏州润阳光伏科技有限公司 | Gate line structure of solar cell |
| KR101693840B1 (en) * | 2015-10-05 | 2017-01-09 | 대주전자재료 주식회사 | Paste composition for solar cell front electrode and solar cell using thereof |
| EP3583612A1 (en) * | 2017-02-15 | 2019-12-25 | Basf Se | Glass frit, conductive paste and use of the conductive paste |
| CN108597644A (en) * | 2018-05-31 | 2018-09-28 | 钦州学院 | The compound silver electrode paste of crystal silicon solar energy battery low-temperature sintering type and preparation method |
| CN208797010U (en) * | 2018-08-22 | 2019-04-26 | 隆基绿能科技股份有限公司 | Cell piece |
-
2020
- 2020-08-28 CN CN202010884545.9A patent/CN112002772B/en active Active
- 2020-08-28 CN CN202210125921.5A patent/CN114464690B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1207572A1 (en) * | 2000-11-15 | 2002-05-22 | Dr. Sugnaux Consulting | Mesoporous electrodes for electrochemical cells and their production method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114464690B (en) | 2023-02-07 |
| CN114464690A (en) | 2022-05-10 |
| CN112002772A (en) | 2020-11-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112562883B (en) | Electrode slurry contacted with N-type solar cell p + emitter | |
| TWI517183B (en) | Conductive paste for solar cell and the method thereof | |
| JP5856178B2 (en) | Lead-free conductive paste composition for solar cells | |
| JP5144857B2 (en) | Conductive paste composition for solar cell | |
| JP5137923B2 (en) | Electrode paste composition for solar cell | |
| CN111028976B (en) | Back silver paste for all-aluminum back surface field solar cell | |
| JP6735046B2 (en) | Conductive paste for solar cell electrode formation | |
| JP5756447B2 (en) | Conductive paste composition for solar cell | |
| CN109949966B (en) | High-reliability PERC crystalline silicon solar cell back silver conductive paste and preparation process thereof | |
| CN114334215B (en) | Electrode slurry for ohmic contact of P-type emitter region of silicon solar cell | |
| US20140319430A1 (en) | Paste composite for forming electrode of solar cell | |
| TW201529513A (en) | Conductive paste composition for solar cells and production method thereof | |
| CN108022672B (en) | Paste composition | |
| CN111902881B (en) | Conductive paste, solar cell prepared from conductive paste and manufacturing method of solar cell | |
| JP6027765B2 (en) | Lead-free conductive paste composition for solar cells | |
| CN214753801U (en) | Series connection structure of heterojunction non-main grid battery piece | |
| CN112002772B (en) | Solar cell grid line structure and photovoltaic module | |
| JP2018129511A (en) | Solar battery | |
| JP5279699B2 (en) | Conductive paste composition for solar cell | |
| JP2014220425A (en) | Conductive paste, and method of manufacturing solar cell | |
| TW201306053A (en) | Conductive paste composition for solar battery | |
| CN114751646A (en) | Glass powder for silver paste on back surface of PERC battery and preparation method thereof | |
| TW200947717A (en) | An electroconductive paste for solar cell | |
| CN115716711B (en) | Glass powder, conductive paste and preparation method and application thereof | |
| CN115338421B (en) | Ni-P alloy additive for front silver paste of solar cell, preparation method and application |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 334100, No. 1, crystal Road, Shangrao Economic Development Zone, Jiangxi, China Applicant after: Jinko Solar Co., Ltd. Applicant after: ZHEJIANG JINKO SOLAR Co.,Ltd. Address before: 334100, No. 1, crystal Road, Shangrao Economic Development Zone, Jiangxi, China Applicant before: JINKO SOLAR Co.,Ltd. Applicant before: ZHEJIANG JINKO SOLAR Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |