CN104733580A - Epitaxial GaN structure with silylene as buffer layer and preparation method thereof - Google Patents
Epitaxial GaN structure with silylene as buffer layer and preparation method thereof Download PDFInfo
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- CN104733580A CN104733580A CN201510121301.4A CN201510121301A CN104733580A CN 104733580 A CN104733580 A CN 104733580A CN 201510121301 A CN201510121301 A CN 201510121301A CN 104733580 A CN104733580 A CN 104733580A
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- gan
- silylene
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title abstract 12
- 239000000758 substrate Substances 0.000 claims abstract description 42
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052709 silver Inorganic materials 0.000 claims abstract description 10
- 239000004332 silver Substances 0.000 claims abstract description 10
- 241000219289 Silene Species 0.000 claims description 72
- 229910052918 calcium silicate Inorganic materials 0.000 claims description 72
- 239000011248 coating agent Substances 0.000 claims description 38
- 238000000576 coating method Methods 0.000 claims description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 29
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 239000012159 carrier gas Substances 0.000 claims description 12
- 239000008246 gaseous mixture Substances 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 150000002431 hydrogen Chemical class 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 10
- 229910002601 GaN Inorganic materials 0.000 description 75
- 239000000463 material Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 10
- 239000010980 sapphire Substances 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses an epitaxial GaN structure with silylene as a buffer layer and a preparation method thereof. The structure comprises the buffer layer and a GaN layer, wherein the buffer layer comprises a silylene layer and a silver droplet layer on the silylene layer, the silylene grows on a substrate, and the silver droplet layer deposits on the silylene layer. The preparation method comprises the following steps that 1, the silylene layer is prepared on the substrate; 2, the silver droplet layer grows on the silylene layer; 3, the GaN layer grows on the sliver droplet layer. The silylene layer is adopted as the buffer layer between the substrate and the GaN epitaxial layer, and the good characteristics of the silylene are combined, namely the silylene has superior electrical conductivity, thermal conductivity and toughness, so that the GaN epitaxial layer with low stress and high crystal quality is obtained; on one hand, the unstable atomic-scale silylene layer is sealed; on the other hand, the connection between the buffer layer and the GaN epitaxial layer is enhanced; the growing GaN epitaxial layer has dislocation with low density, leak current of a device is reduced, and the anti-static electric capacity is improved.
Description
Technical field
The present invention relates to a kind of epitaxial growth structure and method of photoelectric semiconductor material gallium nitride, belong to photoelectron technical field.
Background technology
The advantages such as semiconductor light-emitting-diode has that volume is little, sturdy and durable, luminescence band controllability is strong, the high and low thermal losses of light efficiency, light decay are little, energy-saving and environmental protection, the fields such as, short haul connection interconnected at total colouring, backlight, signal lamp, optical computer have a wide range of applications, and become the focus of current electron electric power area research gradually.Gallium nitride material has the series of advantages such as broad-band gap, high electron mobility, high heat conductance, high stability, therefore has a wide range of applications in high-brightness blue light-emitting diode and huge market prospects.Lighting field proposes more and more higher requirement to LED, and how improving the luminous efficiency of GaN base LED, brightness and reduction production cost is the focus that LED industry is paid close attention to.There is provided reliable structure to improve luminous power, thus the class increasing substantially LED product is the main target of current research and development.
Because the acquisition of gallium nitride material monocrystalline is very difficult, cost is also very high, and therefore gallium nitride material generally grows in foreign substrate (sapphire, carborundum, silicon etc.) at present.Solve the On The Nucleation between substrate and epitaxial loayer at grown on foreign substrates material require, owing to there is the difference of lattice constant and wetability between material, heteroepitaxy needs to be realized by resilient coating.Resilient coating can play the effect alleviating lattice mismatch between substrate and epitaxial loayer, can play wetting effect simultaneously, effectively improve the crystal mass of epitaxial material.But the existence of resilient coating can only alleviate a part of lattice mismatch, the gallium nitride epitaxial materials of actual growth still has the dislocation of higher density.
Be that in the epitaxial layer of gallium nitride-based light-emitting diode growth course of substrate growth, because sapphire and GaN exist significant lattice mismatch, GaN base light LED material can produce very large stress in growth course with sapphire.This stress can have influence on the internal quantum efficiency of epitaxial wafer and the brightness of epitaxial wafer, also can have influence on antistatic effect simultaneously, and in typical epitaxial layer structure, take low-temperature gan layer as resilient coating, this layer has great role in epitaxial growth.And for resilient coating, the effect that different growing methods plays varies in size, most important effect, as the stress in release crystallization process, is blocked up the threading dislocation that goes out, is improved crystal mass etc.
Japanese documentation JP7312350 " CRYSTAL GROWTH METHOD OF GALLIUM NITRIDE-BASED COMPOUNDSEMICONDUCTOR ", disclose a kind of method utilizing aluminum gallium nitride resilient coating epitaxial nitride gallium on a sapphire substrate, this resilient coating adopts the growth of metal-organic chemical vapor deposition equipment method, can obtain the high-quality gallium nitride material of minute surface.American documentation literature US6495867 " InGaN/AlGaN/GaN Mutilayer Buffer For Growth Of GaN On Sapphire ", disclose a kind of structure of compound buffer layer, it adopts the compound buffer layer of indium gallium nitrogen, aluminum gallium nitride, gallium nitride to reduce the mismatch between sapphire and gallium nitride.Chinese patent literature CN103811601A disclosed the GaN base LED multi-level buffer layer growth method of substrate " a kind of be with Sapphire Substrate ", thering is provided a kind of take Sapphire Substrate as the GaN base LED multi-level buffer layer growth method of substrate, its multi-level buffer layer epitaxial structure, the growing method of its epitaxial structure comprises following concrete steps: substrate is carried out high-temperature cleaning process in hydrogen atmosphere, temperature is dropped to 600 DEG C, adjustment epitaxial growth atmosphere prepares the multistage LT-AlGaN/MT-GaN/HT-GaN resilient coating of growth, growing GaN non-doped layer afterwards, the N-type GaN layer of grow doping concentration stabilize, grow shallow quantum well layer, light-emitting layer grows multiple quantum well layer, growing low temperature P type GaN layer, growth PAlGaN current barrier layer, high temperature P type GaN layer, P type contact layer, epitaxial growth terminates rear employing pure nitrogen gas atmosphere and carries out annealing in process.The present invention better solves the Macrolattice mismatch problem between sapphire and GaN by multistage LT-AlGaN/MT-GaN/HT-GaN buffer layer structure, reduces threading dislocation, improves crystal mass, reduces the brightness that electric leakage improves epitaxial wafer, improves LED luminous efficiency.
Above-mentioned document is all the typical resilient coating of epitaxial nitride gallium material, the resilient coating adopted is all nitride material, all relative with the character of Epitaxial gallium nitride layer close, although can lattice mismatch be alleviated, the stress between substrate and epitaxial material and coefficient of thermal expansion mismatch well can not be relaxed.Therefore, when epitaxial growth, epitaxial crystal quality can be caused to decrease owing to there is larger stress, even occur crackle.
Summary of the invention
For the deficiency that the technology of the existing GaN of epitaxial growth on the buffer layer exists, the present invention proposes a kind of stress that not only can reduce epitaxial material, but also the structure using silene as resilient coating extension GaN of epitaxial crystal quality can be improved, this structure significantly improves GaN base LED crystal quality, thus promotes antistatic effect.A kind of preparation method of this structure is provided simultaneously.
Structure using silene as resilient coating extension GaN of the present invention, by the following technical solutions:
Be somebody's turn to do the structure using silene as resilient coating extension GaN, comprise resilient coating and GaN layer, the silvering solution that described resilient coating comprises on silene layer and silene layer drips layer, and silene grows on substrate, depositing silver drop layer on silene layer.
The gross thickness of described silene layer is 0.1nm-500nm; The number of plies is 1-300 layer.
The thickness that described silvering solution drips layer is 5nm-3000nm.
The thickness of described GaN layer is 2 μm-8 μm.
The thickness of described substrate is 100-1000 μm.
Silene is a kind of material be made up of the silicon of single atomic thickness, has extraordinary refined electric conductivity, and mechanics and heat-conductive characteristic superior.The structure of above-mentioned extension GaN is using silene layer as supple buffer layer, silene has band gap, corrugation ridge is formed because its atom can upwards detain, some of them electronics is allowed to be in the slightly different state of energy, these performances can reduce the stress of GaN epitaxial layer, improve the quality of epitaxial crystal, enhance antistatic effect; Meanwhile, on silene layer upper berth, one deck silvering solution drips, and makes on the one hand unstable atom level silene layer be sealed, and enhances being connected of resilient coating and GaN layer on the other hand.LED chip prepared by this kind of method, antistatic effect adds 5%-20% than conventional LED structure.
The above-mentioned preparation method using silene as the structure of resilient coating extension GaN, comprises the following steps:
(1) on sapphire, carborundum or silicon substrate, prepare silene layer, the number of plies of silene layer is 1-300 layer, and gross thickness is 0.1-500nm;
(2) on silene layer, grow one deck silvering solution and drip layer, thickness is 5-3000nm;
The growth temperature of step (2) is 50 DEG C-1500 DEG C, chamber pressure is 80-300mbar, growth rate scope is 1nm/ minute-100nm/ minute, the gaseous mixture that the carrier gas of use is nitrogen and hydrogen, and the volume ratio of nitrogen and hydrogen is 1-5: 5-1.
(3) growing GaN layer on layer is dripped at silvering solution.
The growth rate of step (3) is 0.5 μm/hour-8 μm/hours, and growth temperature is 900-1200 DEG C, and thickness is 2 μm-8 μm, the gaseous mixture that the carrier gas of use is nitrogen and hydrogen, and the volume ratio of nitrogen and hydrogen is 1-5: 5-1.
If preparation is containing the LED of silene resilient coating GaN base, the GaN layer then prepared in above-mentioned steps (3) continues epitaxial growth N-type GaN, InGaN/GaN multi-quantum well active region, P type AlGaN and P type GaN, prepare P electrode and N electrode respectively afterwards, final obtained GaN base LED.
Compared with prior art, the present invention has following characteristics:
1) the present invention is by adopting silene layer as the resilient coating between substrate and GaN epitaxial layer, in conjunction with the good characteristic of novel nano-material silene, namely there is extraordinary refined conductivity, heat conductivity and pliability, to obtain the GaN epitaxial layer of low stress, high-crystal quality.
2) the present invention is dripped at upper berth one deck silvering solution of silene layer, makes on the one hand unstable atom level silene layer be sealed, and enhances being connected of resilient coating and GaN layer on the other hand.The GaN epitaxial layer of growth has more low-density dislocation, thus improves the brightness of the light-emitting diode prepared on its basis or improve the mobility of the High Electron Mobility Transistor prepared on its basis, reduces the leakage current of device, promotes antistatic effect.
3) preparation method of the present invention, alleviates the problem of lattice mismatch between substrate layer and GaN layer and coefficient of thermal expansion mismatch effectively.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the present invention using silene as the structure of resilient coating extension GaN.
Fig. 2 be extension GaN of the present invention structure respectively in X-ray (002) half-peak breadth by normalization surface of intensity distribution when to be reduced to 160 seconds for 240 seconds.
Wherein: 1, substrate layer; 2, silene layer; 3, silvering solution drips layer; 4, GaN layer.
Embodiment
Embodiment 1
As shown in Figure 1, the structure using silene as resilient coating extension GaN of the present embodiment, comprises silicon carbide substrates 1, silene layer 2, silvering solution drips layer 3 and GaN layer 4.Silene growth is in silicon carbide substrates 1, and depositing silver drop layer on silene layer, the silvering solution on silene layer and silene layer drips layer and forms resilient coating.The thickness of silicon carbide substrates 1 is 600 μm.The gross thickness of silene layer 2 is 0.1nm, and the number of plies is 1 layer.The thickness that silvering solution drips layer 3 is 3000nm.The thickness of GaN layer 4 is 6 μm.
The above-mentioned preparation method using silene as the structure of resilient coating extension GaN, step is as follows:
(1) clean silicon carbide substrates 1, prepare two-layer silene layer 2 on substrate 1, the gross thickness of silene layer 2 is 0.1nm.
(2) on silene layer 2, metal-organic chemical vapor deposition equipment legal system is adopted to drip layer 3 for silvering solution.Have the substrate 1 of silene layer 2 to put the reative cell of MOCVD into preparation, heating temperatures to 1500 DEG C, pressure are adjusted to 80mbar and carry out silver-colored droplet growth, and the thickness that silvering solution drips layer is 3000nm; The gaseous mixture that the carrier gas used is nitrogen and hydrogen 1: 1, growth rate is 30nm/min.
(3) drip on layer 3 at silver and adopt metal-organic chemical vapor deposition equipment method growing GaN layer 4, growth rate is 2 μm/h, and growth temperature is 1000 DEG C, and thickness is 6 μm, the gaseous mixture that the carrier gas of use is nitrogen and hydrogen 1: 1 volume ratio.
The GaN layer 4 of growth, after tested, its X-ray (002) half-peak breadth was reduced to 160 seconds by 240 seconds, and crystal mass improves obviously.As shown in Figure 2.
Embodiment 2
The thickness of the silicon substrate 1 in the present embodiment is 500 μm.Silene layer gross thickness is 500nm, and the number of plies is 300.The thickness that silvering solution drips layer 3 is 5nm.The thickness of GaN layer 4 is 8 μm.
The above-mentioned preparation method using silene as the structure of resilient coating extension GaN, step is as follows:
(1) clean silicon carbide substrates 1, prepare 300 layers of silene layer 2 on substrate 1, the gross thickness of silene layer 2 is 500nm.
(2) on silene layer 2, metal-organic chemical vapor deposition equipment legal system is adopted to drip layer 3 for silvering solution.Have the substrate 1 of silene layer 2 to put the reative cell of MOCVD into preparation, heating temperatures to 50 DEG C, pressure are adjusted to 300mbar and carry out silver-colored droplet growth, and the thickness that silvering solution drips layer is 5nm; The gaseous mixture that the carrier gas used is nitrogen and hydrogen 1: 5, growth rate is 1nm/min.
(3) drip on layer 3 at silver and adopt metal-organic chemical vapor deposition equipment method growing GaN layer 4, growth rate is 0.5 μm/h, and growth temperature is 900 DEG C, and thickness is 8 μm, the gaseous mixture that the carrier gas of use is nitrogen and hydrogen 1: 5 volume ratio.
Embodiment 3
The thickness of the silicon substrate 1 in the present embodiment is 100 μm.Silene layer gross thickness is 100nm, and the number of plies is 100.The thickness that silvering solution drips layer 3 is 1000nm.The thickness of GaN layer 4 is 2 μm.
The above-mentioned preparation method using silene as the structure of resilient coating extension GaN, step is as follows:
(1) clean silicon carbide substrates 1, prepare 100 layers of silene layer 2 on substrate 1, the gross thickness of silene layer 2 is 100nm.
(2) on silene layer 2, metal-organic chemical vapor deposition equipment legal system is adopted to drip layer 3 for silvering solution.Have the substrate 1 of silene layer 1 to put the reative cell of MOCVD into preparation, heating temperatures to 1000 DEG C, pressure are adjusted to 200mbar and carry out silver-colored droplet growth, and the thickness that silvering solution drips layer is 1000nm; The gaseous mixture that the carrier gas used is nitrogen and hydrogen 5: 1, growth rate is 70nm/min.
(3) drip on layer 3 at silver and adopt metal-organic chemical vapor deposition equipment method growing GaN layer 4, growth rate is 5 μm/h, and growth temperature is 1100 DEG C, and thickness is 2 μm, the gaseous mixture that the carrier gas of use is nitrogen and hydrogen 5: 1 volume ratio.
Embodiment 4
The thickness of the silicon substrate 1 in the present embodiment is 1000 μm.Silene layer gross thickness is 300nm, and the number of plies is 200.The thickness that silvering solution drips layer 3 is 2000nm.The thickness of GaN layer 4 is 4 μm.
The above-mentioned preparation method using silene as the structure of resilient coating extension GaN, step is as follows:
(1) clean silicon carbide substrates 1, prepare 200 layers of silene layer 2 on substrate 1, the gross thickness of silene layer 2 is 300nm.
(2) on silene layer 2, metal-organic chemical vapor deposition equipment legal system is adopted to drip layer 3 for silvering solution.Have the substrate 1 of silene layer 1 to put the reative cell of MOCVD into preparation, heating temperatures to 500 DEG C, pressure are adjusted to 120mbar and carry out silver-colored droplet growth, and the thickness that silvering solution drips layer is 2000nm; The gaseous mixture that the carrier gas used is nitrogen and hydrogen 3: 2, growth rate is 100nm/min.
(3) drip on layer 3 at silver and adopt metal-organic chemical vapor deposition equipment method growing GaN layer 4, growth rate is 8 μm/h, and growth temperature is 1200 DEG C, and thickness is 4 μm, the gaseous mixture that the carrier gas of use is nitrogen and hydrogen 3: 2 volume ratio.
The GaN layer of the various embodiments described above continues epitaxial growth N-type GaN, InGaN/GaN multi-quantum well active region, P type AlGaN and P type GaN, prepares P electrode and N electrode respectively afterwards, obtained GaN base LED.
Claims (8)
1. the structure using silene as resilient coating extension GaN, comprises resilient coating and GaN layer, it is characterized in that, the silvering solution that described resilient coating comprises on silene layer and silene layer drips layer, and silene grows on substrate, depositing silver drop layer on silene layer.
2. the structure according to claim 1 using silene as resilient coating extension GaN, is characterized in that, the gross thickness of described silene layer is 0.1nm-500nm, and the number of plies is 1-300 layer.
3. the structure according to claim 1 using silene as resilient coating extension GaN, is characterized in that, the thickness that described silvering solution drips layer is 5nm-3000nm.
4. the structure according to claim 1 using silene as resilient coating extension GaN, is characterized in that, the thickness of described GaN layer is 2 μm-8 μm.
5. the structure according to claim 1 using silene as resilient coating extension GaN, is characterized in that, the thickness of described substrate is 100-1000 μm.
6. the preparation method using silene as the structure of resilient coating extension GaN described in claim 1, is characterized in that, comprises the following steps:
(1) on substrate, prepare silene layer, the number of plies of silene layer is 1-300 layer, and gross thickness is 0.1-500nm;
(2) on silene layer, grow one deck silvering solution and drip layer, thickness is 5-3000nm;
(3) growing GaN layer on layer is dripped at silvering solution.
7. the preparation method according to claim 6 using silene as the structure of resilient coating extension GaN, it is characterized in that, it is 50 DEG C-1500 DEG C that described step (2) grows the growth temperature that one deck silvering solution drips layer on silene layer, chamber pressure is 80-300mbar, growth rate scope is 1nm/ minute-100nm/ minute, the gaseous mixture that the carrier gas used is nitrogen and hydrogen, and the volume ratio of nitrogen and hydrogen is 1-5: 5-1.
8. the preparation method according to claim 6 using silene as the structure of resilient coating extension GaN, it is characterized in that, the growth rate that described step (3) drips growing GaN layer on layer at silvering solution is 0.5 μm/hour-8 μm/hours, growth temperature is 900-1200 DEG C, thickness is 2 μm-8 μm, the gaseous mixture that the carrier gas used is nitrogen and hydrogen, and the volume ratio of nitrogen and hydrogen is 1-5: 5-1.
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| CN105070804A (en) * | 2015-07-29 | 2015-11-18 | 山东浪潮华光光电子股份有限公司 | Epitaxial GaN structure with gallium droplets as buffer layer and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140014171A1 (en) * | 2012-06-15 | 2014-01-16 | Purdue Research Foundation | High optical transparent two-dimensional electronic conducting system and process for generating same |
| US20140255705A1 (en) * | 2013-03-08 | 2014-09-11 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Growth of Crystalline Materials on Two-Dimensional Inert Materials |
| CN104241093A (en) * | 2013-06-19 | 2014-12-24 | 英飞凌科技股份有限公司 | Method for processing a carrier and an electronic component |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140014171A1 (en) * | 2012-06-15 | 2014-01-16 | Purdue Research Foundation | High optical transparent two-dimensional electronic conducting system and process for generating same |
| US20140255705A1 (en) * | 2013-03-08 | 2014-09-11 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Growth of Crystalline Materials on Two-Dimensional Inert Materials |
| CN104241093A (en) * | 2013-06-19 | 2014-12-24 | 英飞凌科技股份有限公司 | Method for processing a carrier and an electronic component |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105070804A (en) * | 2015-07-29 | 2015-11-18 | 山东浪潮华光光电子股份有限公司 | Epitaxial GaN structure with gallium droplets as buffer layer and preparation method thereof |
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Application publication date: 20150624 |