CN109449268B - LED epitaxial structure for reducing resistivity of P-type GaN layer and growth method thereof - Google Patents

LED epitaxial structure for reducing resistivity of P-type GaN layer and growth method thereof Download PDF

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CN109449268B
CN109449268B CN201811289199.9A CN201811289199A CN109449268B CN 109449268 B CN109449268 B CN 109449268B CN 201811289199 A CN201811289199 A CN 201811289199A CN 109449268 B CN109449268 B CN 109449268B
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徐平
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Xiangneng Hualei Optoelectrical Co Ltd
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

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Abstract

The invention provides a growth method of an LED epitaxial structure, which comprises the steps of processing a sapphire substrate at a high temperature, growing a low-temperature buffer GaN layer, growing an undoped GaN layer, growing an N-type GaN layer doped with Si, growing a multi-quantum well light-emitting layer, growing a P-type AlGaN layer, growing a P-type GaN layer and annealing and cooling; when growing the P-type GaN layer, NH at 900 ℃ is firstly carried out3Pre-treating in TMGa environment, then in NH3、TMGa、H2、Cp2Gradually raising the temperature from 870 ℃ to 1000 ℃ in the Mg environment for growth; the thickness of the P-type GaN layer is 50-200 nm, the molar ratio of nitrogen atoms to gallium atoms is 1400:1, and the doping concentration of Mg is 1E 19-1E 20atoms/cm3. The invention reduces the resistivity of the P-type GaN layer, improves the crystal quality and the hole concentration, and further improves the luminous intensity of the LED.

Description

LED epitaxial structure for reducing resistivity of P-type GaN layer and growth method thereof
Technical Field
The invention relates to the field of LED manufacturing, in particular to a method capable of effectively reducing the resistivity of a P-type GaN layer, further improving the luminous intensity of an LED and improving the surface flatness of an LED epitaxial structure, and the LED epitaxial structure prepared by the method.
Background
An LED (Light Emitting Diode) is a solid lighting electronic component, and is recognized by consumers due to its advantages of small size, low power consumption, long service life, environmental friendliness, and the like, and has a broad market prospect. In the epitaxial structure of the LED, an N layer is used for providing electrons, a P layer is used for providing holes, the electrons and the holes meet at an active layer under the drive of constant current voltage and generate electron-hole pair recombination, and the light-emitting function is realized in the form of releasing photons. Although the production scale of the current domestic and foreign LEDs is gradually enlarged, the product has the problem of low luminous efficiency, and the requirements on the brightness and the luminous efficiency of the LEDs in the market cannot be met, so that the application range and the energy-saving effect of the LEDs are further influenced.
The reasons for the above phenomena are numerous, which provide researchers in the field with a variety of optimization paths; among them, the P-type layer (i.e. P-type GaN layer) in the conventional LED epitaxial structure has a high resistivity, a low hole concentration and a low crystal quality, which is one of the reasons for the low light emitting efficiency of the LED chip.
Disclosure of Invention
In order to overcome the problems mentioned in the background art, the invention provides an LED growth method capable of effectively reducing the resistivity of a P-type GaN layer and an LED epitaxial structure prepared by the method, so as to achieve the purpose of improving the luminous intensity of an LED.
A growth method of an LED epitaxial structure for reducing the resistivity of a P-type GaN layer sequentially comprises the steps of processing a sapphire substrate at a high temperature, growing a low-temperature buffer GaN layer, growing an undoped GaN layer, growing an N-type GaN layer doped with Si, growing a multi-quantum well light-emitting layer, growing a P-type AlGaN layer, growing a P-type GaN layer and annealing and cooling; the step of growing the P-type GaN layer comprises a pretreatment process and a heating growth process.
The specific steps for growing the P-type GaN layer are as follows:
A. keeping the pressure in the reaction chamber at 500-600 mbar and the temperature at 850-900 ℃, and introducing NH with the flow rate of 80-100L/min3Carrying out pretreatment on the TMGa of 15-20L/min;
B. keeping the pressure in the reaction cavity at 400-600 mbar, and introducing NH with the flow rate of 50000-70000 sccm320 to 100sccm of TMGa and 100 to 130L/min of H21000 to 3000sccm of Cp2Controlling the temperature in the reaction cavity to gradually rise from 870 ℃ to 1000 ℃ in the growth process of Mg, controlling the molar ratio of nitrogen atoms to gallium atoms to be 1400: 1-1500: 1, and continuously growing a P-type GaN layer with the thickness of 50-200 nm, wherein the doping concentration of Mg is 1E19atoms/cm3～1E20atoms/cm3。
Preferably, the temperature of the reaction cavity is controlled to be gradually increased from 870 ℃ to 1000 ℃ at a speed of 0.5-1 ℃ per second.
Preferably, the step of processing the sapphire substrate at high temperature comprises: keeping the pressure in the reaction chamber at 100-300 mbar and the temperature at 1000-1100 ℃, and introducing H with the flow rate of 100-130L/min2And carrying out heat treatment on the sapphire substrate for 8-10 minutes.
Preferably, the step of annealing and cooling comprises: and (3) reducing the temperature in the reaction cavity to 650-680 ℃, preserving the temperature for 20-30 min, closing the heating and gas supply system, and cooling the prepared LED epitaxial structure along with the furnace.
Preferably, the step of growing the low temperature buffer GaN layer is:
keeping the pressure in the reaction chamber at 300-600 mbar and the temperature at 500-600 ℃, and introducing the gas with the flow rate of 10000-20000 sccmNH350-100 sccm of TMGa and 100-130L/min of H2Growing a low-temperature buffer layer GaN with the thickness of 20-40 nm on the sapphire substrate;
keeping the pressure in the reaction chamber at 300-600 mbar and the temperature at 1000-1100 ℃, and introducing NH with the flow rate of 30000-40000 sccm3And H of 100 to 130L/min2And keeping the temperature constant, and annealing the grown low-temperature buffer layer GaN for 300-500 s.
Preferably, the step of growing the undoped GaN layer is:
keeping the pressure in the reaction chamber at 300-600 mbar and the temperature at 1000-1200 ℃, and introducing NH with the flow rate of 30000-40000 sccm3TMGa of 200-400 sccm, H of 100-130L/min2And continuously growing an undoped GaN layer with the thickness of 2-4 mu m on the low-temperature buffer GaN layer.
Preferably, the step of growing the Si-doped N-type GaN layer is:
keeping the pressure in the reaction chamber at 300-600 mbar and the temperature at 1000-1200 ℃, and introducing NH with the flow rate of 30000-60000 sccm3TMGa of 200-400 sccm, H of 100-130L/min220 to 50sccm of SiH4Continuously growing a Si-doped N-type GaN layer with the thickness of 3-4 μm on the undoped GaN layer, wherein the doping concentration of Si is 5E19atoms/cm3～1E20atoms/cm3；
Keeping the pressure and the temperature in the reaction chamber unchanged, and introducing NH with the flow of 30000-60000 sccm3TMGa of 200-400 sccm, H of 100-130L/min2SiH of 2-10 sccm4Continuously growing a Si-doped N-type GaN layer with the thickness of 200-400 nm, wherein the doping concentration of Si is 5E18atoms/cm3～1E19atoms/cm3；
Keeping the pressure and the temperature in the reaction chamber unchanged, and introducing NH with the flow of 30000-60000 sccm3TMGa of 200-400 sccm, H of 100-130L/min21 to 2sccm of SiH4Continuously growing a Si-doped N-type GaN layer with the thickness of 200-400 nm, wherein the doping concentration of Si is 5E17atoms/cm3～1E18atoms/cm3。
Preferably, the step of growing the multiple quantum well light emitting layer is:
keeping the pressure in the reaction chamber at 300-400 mbar and the temperature at 700-750 ℃, and introducing NH with the flow rate of 50000-70000 sccm320 to 40sccm of TMGa, 1500 to 2000sccm of TMIn, and 100 to 130L/min of N2Continuously growing In doped with In to a thickness of 2.5 to 3.5nmXGa(1-X)An N well layer, wherein X is 0.20-0.25, and the light-emitting wavelength is 450-455 nm;
keeping the pressure in the reaction chamber at 300-400 mbar and the temperature at 750-850 ℃, and introducing NH with the flow rate of 50000-70000 sccm320 to 100sccm of TMGa, 100 to 130L/min of N2Continuously growing a GaN barrier layer with the thickness of 8-15 nm;
periodically and alternately growing InXGa(1-X)The N-well layer and the GaN barrier layer, and the total cycle number is 7-15.
Preferably, the step of growing the P-type AlGaN layer is:
keeping the pressure in the reaction chamber at 200-400 mbar and the temperature at 900-950 ℃, and introducing NH with the flow rate of 50000-70000 sccm330 to 60sccm of TMGa and 100 to 130L/min of H2100-130 sccm TMAl, 1000-1300 sccm Cp2Mg, continuously growing a P-type AlGaN layer with the thickness of 50-100 nm, wherein the doping concentration of Al is 1E20atoms/cm3～3E20atoms/cm3The doping concentration of Mg is 1E19atoms/cm3～1E20atoms/cm3。
The invention also provides an LED epitaxial structure for reducing the resistivity of the P-type GaN layer, which comprises a sapphire substrate, a low-temperature buffer GaN layer, an undoped GaN layer, an Si-doped N-type GaN layer, a multi-quantum well light-emitting layer, a P-type AlGaN layer and a P-type GaN layer which are arranged in sequence from bottom to top; the P-type GaN layer is prepared through the processes of pretreatment at 900 ℃ and then temperature rise growth at 870-1000 ℃.
Preferably, the thickness of the P-type GaN layer is 50-200 nm, the molar ratio of nitrogen atoms to gallium atoms in the P-type GaN layer is 1400: 1-1500: 1, and the doping concentration of Mg is 1E19atoms/cm3～1E20atoms/cm3。
The flow rates referred to in this invention are in standard milliliters per minute sccm.
The technical scheme provided by the invention has the following beneficial effects:
1. the invention is beneficial to exciting the activity of nitrogen atoms and gallium atoms and enabling the distribution of the nitrogen atoms and the gallium atoms to be more uniform by carrying out pretreatment before growing the Mg-doped P-type GaN layer, simultaneously reduces nitrogen vacancies and improves NH3The injection efficiency of the P layer is improved, the compensation of an acceptor (magnesium element) is inhibited, and the activation rate of the acceptor is greatly improved, so that the resistivity of the P layer is reduced, the hole concentration of the P layer is improved, and the aim of improving the luminous efficiency of the LED is fulfilled.
2. According to the invention, a temperature change mechanism is introduced In the growth process of the Mg-doped P-type GaN layer, so that the internal defects of the material are favorably reduced, the activation rate of Mg doping and the conductivity of the P-type layer are further improved, the generation of non-radiative recombination centers is reduced by preventing Mg In the P-type layer from diffusing to the active layer at high temperature, the damage of InGaN decomposition and segregation caused by overhigh temperature In the growth process of the P-type GaN layer to the active region of the quantum well can be reduced, the distribution of In-rich quantum dots is small and numerous, and the luminous efficiency of the quantum well is further improved.
3. The invention realizes the control of the two-dimensional growth process of the nitrogen atoms and the gallium atoms by controlling the molar ratio of the nitrogen atoms to the gallium atoms, thereby flattening the surface of the epitaxial layer.
4. When the N-type GaN layer grows, the Si doping is set to the gradient change concentration which is gradually reduced from bottom to top, so that the dislocation defect existing in the epitaxial growth process can be effectively reduced, the defect is blocked from extending upwards, and the epitaxial crystal quality is improved.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Comparative example 1
In this example, MOCVD was used to grow high-brightness GaN-based LED epitaxial wafer using high-purity H2Or high purity N2Or high purity H2And high purity N2The mixed gas of (2) is used as a carrier gas, high-purity NH3As an N source, trimethylgallium (TMGa) as a gallium source, trimethylindium (TMIn) as an indium source, Silane (SiH)4) As N-type dopant, trimethylaluminum (TMAl) as aluminum source, magnesium diclomentate (CP)2Mg) as a P-type dopant, and (0001) plane sapphire as a substrate. The specific growth mode is as follows:
1. processing sapphire substrates
The pressure in the reaction chamber is kept at 200mbar, the temperature is 1100 ℃, and H with the flow rate of 100L/min is introduced2The sapphire substrate was heat-treated for 10 minutes.
2. Growing low temperature buffer layer
2.1 maintaining the pressure in the reaction chamber at 500mbar and 500 ℃ and introducing NH with the flow rate of 15000sccm3TMGa of 100sccm, H of 100L/min2Growing a low-temperature buffer layer GaN with the thickness of 30nm on the sapphire substrate;
2.2 the pressure in the reaction chamber is kept at 500mbar and the temperature is 1100 ℃, NH with the flow rate of 35000sccm is introduced3And H of 100L/min2And keeping the temperature constant, and annealing the grown low-temperature buffer layer GaN for 500 s.
3. Growing undoped GaN layer
Keeping the pressure in the reaction chamber at 500mbar and the temperature at 1100 ℃, and introducing NH with the flow rate of 35000sccm3TMGa of 300sccm, H of 100L/min2And continuously growing an undoped GaN layer with the thickness of 3 mu m on the low-temperature buffer GaN layer.
4. Growing Si-doped N-type GaN layer
4.1 maintaining the pressure in the reaction chamber at 500mbar and the temperature at 1100 deg.C, introducing NH with the flow rate of 50000sccm3TMGa of 300sccm, H of 100L/min240sccm SiH4Continuously growing a Si-doped N-type GaN layer having a thickness of 4 μm and a doping concentration of 5E19atoms/cm on the undoped GaN layer3～1E20atoms/cm3；
4.2 keeping the pressure and temperature in the reaction chamber constant, and introducing NH with the flow rate of 50000sccm3TMGa of 300sccm, H of 100L/min24sccm SiH4Continuing to grow a Si-doped N-type GaN layer with a thickness of 400nm and a doping concentration of 5E18atoms/cm3～1E19atoms/cm3；
4.3 keeping the pressure and temperature in the reaction chamber constant, and introducing NH with the flow rate of 50000sccm3TMGa of 300sccm, H of 100L/min21sccm of SiH4Continuing to grow a Si-doped N-type GaN layer with a thickness of 400nm and a doping concentration of 5E17atoms/cm3～1E18atoms/cm3。
5. Growing multiple quantum well luminescent layer
5.1 maintaining the pressure in the reaction chamber at 400mbar and 750 deg.C, introducing NH with a flow rate of 60000sccm3TMGa of 40sccm, TMIn of 1800sccm, N of 100L/min2Continuously growing In doped with In to a thickness of 3nmXGa(1-X)An N well layer, wherein X is 0.20-0.25, and the light-emitting wavelength is 450-455 nm;
5.2 keeping the pressure in the reaction chamber at 400mbar and the temperature at 750 ℃, introducing NH with the flow rate of 60000sccm3TMGa of 50sccm, N of 100L/min2Continuously growing a GaN barrier layer with the thickness of 12 nm;
5.3 periodically and alternately growing InXGa(1-X)The N well layer and the GaN barrier layer, and the total cycle number is 15.
6. Growing a P-type AlGaN layer
Keeping the pressure in the reaction chamber at 400mbar and 950 ℃ and introducing NH with the flow of 60000sccm3TMGa of 60sccm, H of 100L/min2TMAl of 100sccm, Cp of 1200sccm2Mg, continuously growing a P-type AlGaN layer with the thickness of 100nm, wherein the doping concentration of Al is 1E20atoms/cm3～3E20atoms/cm3The doping concentration of Mg is 1E19atoms/cm3～1E20atoms/cm3。
7. Growing P-type GaN layer
The pressure in the reaction chamber is kept at 550mbar and the temperatureNH with the flow rate of 60000sccm is introduced at 1000 DEG C3TMGa of 50sccm, H of 100L/min2Cp of 2000sccm2Mg, continuously growing a P-type GaN layer with the thickness of 150nm, wherein the doping concentration of the Mg is 1E19atoms/cm3～1E20atoms/cm3。
8. Annealing and cooling
And (3) reducing the temperature in the reaction cavity to 650-680 ℃, preserving the temperature for 30min, closing the heating and gas supply system, and cooling the prepared LED epitaxial structure along with the furnace to obtain a sample 1.
Example 1 (Using the growth method of the invention)
In this example, MOCVD was used to grow high-brightness GaN-based LED epitaxial wafer using high-purity H2Or high purity N2Or high purity H2And high purity N2The mixed gas of (2) is used as a carrier gas, high-purity NH3As an N source, trimethylgallium (TMGa) as a gallium source, trimethylindium (TMIn) as an indium source, Silane (SiH)4) As N-type dopant, trimethylaluminum (TMAl) as aluminum source, magnesium diclomentate (CP)2Mg) as a P-type dopant, and (0001) plane sapphire as a substrate. The specific growth mode is as follows:
1. processing sapphire substrates
The pressure in the reaction chamber is kept at 200mbar, the temperature is 1100 ℃, and H with the flow rate of 100L/min is introduced2The sapphire substrate was heat-treated for 10 minutes.
2. Growing low temperature buffer layer
2.1 maintaining the pressure in the reaction chamber at 500mbar and 500 ℃ and introducing NH with the flow rate of 15000sccm3TMGa of 100sccm, H of 100L/min2Growing a low-temperature buffer layer GaN with the thickness of 30nm on the sapphire substrate;
2.2 the pressure in the reaction chamber is kept at 500mbar and the temperature is 1100 ℃, NH with the flow rate of 35000sccm is introduced3And H of 100L/min2And keeping the temperature constant, and annealing the grown low-temperature buffer layer GaN for 500 s.
3. Growing undoped GaN layer
Keeping the pressure in the reaction chamber at 500mbar and the temperature at 1100 ℃, and introducing NH with the flow rate of 35000sccm3T of 300sccmMGa, 100L/min H2And continuously growing an undoped GaN layer with the thickness of 3 mu m on the low-temperature buffer GaN layer.
4. Growing Si-doped N-type GaN layer
4.1 maintaining the pressure in the reaction chamber at 500mbar and the temperature at 1100 deg.C, introducing NH with the flow rate of 50000sccm3TMGa of 300sccm, H of 100L/min240sccm SiH4Continuously growing a Si-doped N-type GaN layer having a thickness of 4 μm and a doping concentration of 5E19atoms/cm on the undoped GaN layer3～1E20atoms/cm3；
4.2 keeping the pressure and temperature in the reaction chamber constant, and introducing NH with the flow rate of 50000sccm3TMGa of 300sccm, H of 100L/min24sccm SiH4Continuing to grow a Si-doped N-type GaN layer with a thickness of 400nm and a doping concentration of 5E18atoms/cm3～1E19atoms/cm3；
4.3 keeping the pressure and temperature in the reaction chamber constant, and introducing NH with the flow rate of 50000sccm3TMGa of 300sccm, H of 100L/min21sccm of SiH4Continuing to grow a Si-doped N-type GaN layer with a thickness of 400nm and a doping concentration of 5E17atoms/cm3～1E18atoms/cm3。
5. Growing multiple quantum well luminescent layer
5.1 maintaining the pressure in the reaction chamber at 400mbar and 750 deg.C, introducing NH with a flow rate of 60000sccm3TMGa of 40sccm, TMIn of 1800sccm, N of 100L/min2Continuously growing In doped with In to a thickness of 3nmXGa(1-X)An N well layer, wherein X is 0.20-0.25, and the light-emitting wavelength is 450-455 nm;
5.2 keeping the pressure in the reaction chamber at 400mbar and the temperature at 750 ℃, introducing NH with the flow rate of 60000sccm3TMGa of 50sccm, N of 100L/min2Continuously growing a GaN barrier layer with the thickness of 12 nm;
5.3 periodically and alternately growing InXGa(1-X)The N well layer and the GaN barrier layer, and the total cycle number is 15.
6. Growing a P-type AlGaN layer
Maintenance reactionThe pressure in the cavity is 400mbar, the temperature is 950 ℃, and NH with the flow rate of 60000sccm is introduced3TMGa of 60sccm, H of 100L/min2TMAl of 100sccm, Cp of 1200sccm2Mg, continuously growing a P-type AlGaN layer with the thickness of 100nm, wherein the doping concentration of Al is 1E20atoms/cm3～3E20atoms/cm3The doping concentration of Mg is 1E19atoms/cm3～1E20atoms/cm3。
7. Growing P-type GaN layer
7.1 maintaining the pressure in the reaction chamber at 550mbar and 900 deg.C, introducing NH at a flow rate of 100L/min320L/min of TMGa is pretreated for 15 s;
7.2 the pressure in the reaction chamber was kept at 550mbar and NH at a flow rate of 60000sccm was introduced3TMGa of 50sccm, H of 100L/min2Cp of 2000sccm2Mg, the temperature in the reaction cavity is controlled to be gradually increased from 870 ℃ to 1000 ℃ at the speed of 1 ℃ per second in the growth process, the molar ratio of nitrogen atoms to gallium atoms is controlled to be 1400:1, and a P-type GaN layer with the thickness of 150nm is continuously grown, wherein the doping concentration of the Mg is 1E19atoms/cm3～1E20atoms/cm3。
8. Annealing and cooling
And (3) reducing the temperature in the reaction cavity to 650-680 ℃, preserving the temperature for 30min, closing the heating and gas supply system, and cooling the prepared LED epitaxial structure along with the furnace to obtain a sample 2.
Sample 1 and sample 2 were each coated with a 150nm ITO layer, 1500nm Cr/Pt/Au electrodes, and 100nm SiO under the same pre-process conditions2The two samples were then separately ground and cut under identical conditions into 635 μm (25mil by 25mil) chip particles, and then subjected to performance testing. And respectively selecting 100 sample crystal grains at the same position, and packaging into the white light LED under the same packaging process.
The photoelectric properties of sample 1 and sample 2 were tested using an integrating sphere at a drive current of 350mA, and the data obtained (average of 100 sample grains) are shown in the following table.
TABLE 1
Figure GDA0002414549370000071
As can be seen from Table 1, the brightness of the improved LED product is increased from 550.05mw to 615.32mw, the forward voltage is reduced from 3.16V to 3.00V, the reverse voltage is increased from 35.33V to 39.90V, and the antistatic yield is increased from 90.75% to 92.07%. The following conclusions can therefore be drawn:
the growth method provided by the invention is obviously superior to the traditional growth method, the LED product prepared by the invention is improved in light efficiency and antistatic yield, and meanwhile, the forward voltage is reduced, so that the LED device is more energy-saving, and the reverse voltage is increased, so that the service life of the LED device is longer. The experimental data prove that the technical scheme provided by the invention is feasible in the aspect of improving the quality of the LED epitaxial crystal.
The above description is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention, and various modifications and changes may be made by those skilled in the art. Any modification or equivalent substitution made by the content of the specification of the present invention, which is directly or indirectly applied to other related technical fields, shall fall within the spirit and principle of the present invention, and shall be included in the scope of the present invention.

Claims (8)

1. A growth method of an LED epitaxial structure for reducing the resistivity of a P-type GaN layer is characterized by sequentially comprising the steps of processing a sapphire substrate at a high temperature, growing a low-temperature buffer GaN layer, growing a non-doped GaN layer, growing a Si-doped N-type GaN layer, growing a multi-quantum well light-emitting layer, growing a P-type AlGaN layer, growing a P-type GaN layer and annealing and cooling; the step of growing the P-type GaN layer comprises a pretreatment process and a heating growth process; the specific steps for growing the P-type GaN layer are as follows:
A. keeping the pressure in the reaction chamber at 500-600 mbar and the temperature at 850-900 ℃, and introducing NH with the flow rate of 80-100L/min3Carrying out pretreatment on the TMGa of 15-20L/min;
B. keeping the pressure in the reaction cavity at 400-600 mbar, and introducing NH with the flow rate of 50000-70000 sccm320 to 100sccm of TMGa, 100 to 130L/minH21000 to 3000sccm of Cp2Controlling the temperature in the reaction cavity to gradually rise from 870 ℃ to 1000 ℃ in the growth process of Mg, controlling the molar ratio of nitrogen atoms to gallium atoms to be 1400: 1-1500: 1, and continuously growing a P-type GaN layer with the thickness of 50-200 nm, wherein the doping concentration of Mg is 1E19atoms/cm3～1E20atoms/cm3。
2. The method for growing an epitaxial structure for LED according to claim 1, wherein the epitaxial layer is a silicon nitride layer,
the high-temperature treatment of the sapphire substrate comprises the following steps: keeping the pressure in the reaction chamber at 100-300 mbar and the temperature at 1000-1100 ℃, and introducing H with the flow rate of 100-130L/min2Carrying out heat treatment on the sapphire substrate for 8-10 minutes;
the annealing and cooling steps are as follows: and (3) reducing the temperature in the reaction cavity to 650-680 ℃, preserving the temperature for 20-30 min, closing the heating and gas supply system, and cooling the prepared LED epitaxial structure along with the furnace.
3. The method for growing the LED epitaxial structure according to claim 1, wherein the step of growing the low-temperature buffer GaN layer is:
keeping the pressure in the reaction chamber at 300-600 mbar and the temperature at 500-600 ℃, and introducing NH with the flow of 10000-20000 sccm350-100 sccm of TMGa and 100-130L/min of H2Growing a low-temperature buffer layer GaN with the thickness of 20-40 nm on the sapphire substrate;
keeping the pressure in the reaction chamber at 300-600 mbar and the temperature at 1000-1100 ℃, and introducing NH with the flow rate of 30000-40000 sccm3And H of 100 to 130L/min2And keeping the temperature constant, and annealing the grown low-temperature buffer layer GaN for 300-500 s.
4. The method for growing the epitaxial structure of the LED according to claim 1, wherein the step of growing the undoped GaN layer is:
keeping the pressure in the reaction chamber at 300-600 mbar and the temperature at 1000-1200 ℃, and introducing NH with the flow rate of 30000-40000 sccm3200 to 400sccmTMGa, H of 100-130L/min2And continuously growing an undoped GaN layer with the thickness of 2-4 mu m on the low-temperature buffer GaN layer.
5. The method for growing the epitaxial structure of the LED according to claim 1, wherein the step of growing the N-type GaN layer doped with Si comprises:
keeping the pressure in the reaction chamber at 300-600 mbar and the temperature at 1000-1200 ℃, and introducing NH with the flow rate of 30000-60000 sccm3TMGa of 200-400 sccm, H of 100-130L/min220 to 50sccm of SiH4Continuously growing a Si-doped N-type GaN layer with the thickness of 3-4 μm on the undoped GaN layer, wherein the doping concentration of Si is 5E19atoms/cm3～1E20atoms/cm3；
Keeping the pressure and the temperature in the reaction chamber unchanged, and introducing NH with the flow of 30000-60000 sccm3TMGa of 200-400 sccm, H of 100-130L/min2SiH of 2-10 sccm4Continuously growing a Si-doped N-type GaN layer with the thickness of 200-400 nm, wherein the doping concentration of Si is 5E18atoms/cm3～1E19atoms/cm3；
Keeping the pressure and the temperature in the reaction chamber unchanged, and introducing NH with the flow of 30000-60000 sccm3TMGa of 200-400 sccm, H of 100-130L/min21 to 2sccm of SiH4Continuously growing a Si-doped N-type GaN layer with the thickness of 200-400 nm, wherein the doping concentration of Si is 5E17atoms/cm3～1E18atoms/cm3。
6. The growth method of the LED epitaxial structure according to claim 1, wherein the step of growing a multiple quantum well light emitting layer is:
keeping the pressure in the reaction chamber at 300-400 mbar and the temperature at 700-750 ℃, and introducing NH with the flow rate of 50000-70000 sccm320 to 40sccm of TMGa, 1500 to 2000sccm of TMIn, and 100 to 130L/min of N2Continuously growing In doped with In to a thickness of 2.5 to 3.5nmXGa(1-X)An N well layer, wherein X is 0.20-0.25, and the light-emitting wavelength is 450-455 nm;
keeping the pressure in the reaction chamber at 300-400 mbar and the temperature at 750-850 ℃, and introducing NH with the flow rate of 50000-70000 sccm320 to 100sccm of TMGa, 100 to 130L/min of N2Continuously growing a GaN barrier layer with the thickness of 8-15 nm;
periodically and alternately growing InXGa(1-X)The N-well layer and the GaN barrier layer, and the total cycle number is 7-15.
7. The growth method of the LED epitaxial structure according to claim 1, wherein the step of growing the P-type AlGaN layer is:
keeping the pressure in the reaction chamber at 200-400 mbar and the temperature at 900-950 ℃, and introducing NH with the flow rate of 50000-70000 sccm330 to 60sccm of TMGa and 100 to 130L/min of H2100-130 sccm TMAl, 1000-1300 sccm Cp2Mg, continuously growing a P-type AlGaN layer with the thickness of 50-100 nm, wherein the doping concentration of Al is 1E20atoms/cm3～3E20atoms/cm3The doping concentration of Mg is 1E19atoms/cm3～1E20atoms/cm3。
8. An LED epitaxial structure capable of reducing the resistivity of a P-type GaN layer, which is prepared by the method according to any one of claims 1 to 7, is characterized by comprising a sapphire substrate, a low-temperature buffer GaN layer, an undoped GaN layer, an Si-doped N-type GaN layer, a multi-quantum well light-emitting layer, a P-type AlGaN layer and a P-type GaN layer which are arranged from bottom to top in sequence; the P-type GaN layer is prepared through the processes of pretreatment at 900 ℃ and then temperature rise growth at 870-1000 ℃.
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