CN104730792B - 一种阵列基板和显示装置 - Google Patents

一种阵列基板和显示装置 Download PDF

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CN104730792B
CN104730792B CN201510164507.5A CN201510164507A CN104730792B CN 104730792 B CN104730792 B CN 104730792B CN 201510164507 A CN201510164507 A CN 201510164507A CN 104730792 B CN104730792 B CN 104730792B
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CN104730792A (zh
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陈传宝
马俊才
杨杰
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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Hefei BOE Optoelectronics Technology Co Ltd
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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Abstract

本发明公开了一种阵列基板和显示装置，用以解决由于数据线发生偏移时使得相邻两行TFT电容不同，进而导致相邻两行的灰阶亮度不同而产生的显示不良的问题。所述阵列基板上设置有横纵交错的扫描线和数据线，每行扫描线上均设置有栅极驱动电路，所述每行扫描线上还设置有与所述栅极驱动电路连接的补偿电容，所述补偿电容由交错设置的第一金属层和第二金属层的重叠区域组成，所述第一金属层的重叠区域通过绝缘层与所述第二金属层的重叠区域隔绝，其中：第N行补偿电容和第N+1行补偿电容的大小变化方向相反，且第N行补偿电容的大小变化方向与第N+1行TFT电容的大小变化方向相同，N为大于等于1的自然数。

Description

一种阵列基板和显示装置
技术领域
本发明涉及液晶显示技术领域，尤其涉及一种阵列基板和显示装置。
背景技术
液晶显示器包括相对设置的阵列基板和彩膜基板，阵列基板上设置有纵横交错的扫描线和数据线，扫描线和数据线围成像素单元，每个像素单元内设置有薄膜晶体管(TFT，Thin Film Transistor)和像素电极。如图1a所示，为现有技术中阵列基板的结构示意图。液晶显示器在显示过程中，扫描线逐行扫描，一条扫描线通过该行的栅极驱动电路(GOA，Gate On Array)控制改行薄膜晶体管，进而控制一行像素电极。当对一条扫描线进行扫描时，该条扫描线控制的薄膜晶体管开启，从而将数据线上相应的数据电压传输至像素电极，对像素电极进行充电，扫描结束后，薄膜晶体管关闭。
随着高分辨率栅极驱动电路产品的发展，像素密度随之越来越大，这就意味着高清晰画面显示的同时产品的功耗也随之上升。为降低产品的功耗，像素TFT阵列会采用Z-反转模式。但针对高分辨率产品来说，像素TFT的尺寸较小，如果数据线和扫描线发生偏移，就会导致相邻两行的像素TFT的电容不同(数据线和扫描线之间的电容)，如图1b所示。相邻两行的电容不同使得相邻两扫描线的信号延迟不同，跳变电压也随之不同，以上差异便会产生相邻两行的灰阶亮度有所差异，这样就会产生画面显示不均，闪烁等显示不良。
发明内容
本发明提供一种阵列基板和显示装置，用以解决由于数据线发生偏移时使得相邻两行TFT电容不同，进而导致相邻两行的灰阶亮度不同而产生的显示不良的问题。
本发明实施例提供一种阵列基板，阵列基板上设置有横纵交错的扫描线和数据线，每行扫描线上均设置有栅极驱动电路，所述每行扫描线上还设置有与所述栅极驱动电路连接的补偿电容，所述补偿电容由交错设置的第一金属层和第二金属层的重叠区域组成，所述第一金属层的重叠区域通过绝缘层与所述第二金属层的重叠区域隔绝，其中：
第N行补偿电容和第N+1行补偿电容的大小变化方向相反，且第N行补偿电容的大小变化方向与第N+1行TFT电容的大小变化方向相同，N为大于等于1的自然数。
作为本发明实施例的一种实施方式，重叠区域为矩形。
其中，矩形的一边与所述数据线平行。
上述阵列基板中，组成第N行和第N+1行补偿电容的第一金属层的非重叠区域和第二金属层的非重叠区域与所述重叠区域的相对位置相反。
上述阵列基板中，所述补偿电容设置于所述栅极驱动电路的输入端或者输出端。
上述阵列基板中，所述第一金属层采用与扫描线相同的金属材料；所述第二金属层采用与数据线相同的金属材料。
如果所述数据线相对所述扫描线向右偏移且所述第N行TFT电容减小，则组成所述第N行补偿电容的第一金属层的非重叠区域位于所述重叠区域的左边，组成第N行补偿电容的第二金属层的非重叠区域位于所述重叠区域的右边，组成所述第N+1行补偿电容的第一金属层的非重叠区域位于所述重叠区域的右边，组成所述第N+1行补偿电容的第二金属层的非重叠区域位于所述重叠区域的左边。
如果所述数据线相对所述扫描线向右偏移且所述第N行TFT电容增大，则组成所述第N行补偿电容的第一金属层的非重叠区域位于所述重叠区域的右边，组成第N行补偿电容的第二金属层的非重叠区域位于所述重叠区域的左边，组成所述第N+1行补偿电容的第一金属层的非重叠区域位于所述重叠区域的左边，组成所述第N+1行补偿电容的第二金属层的非重叠区域位于所述重叠区域的右边。
如果所述数据线相对所述扫描线向左偏移且所述第N行TFT电容减小，则组成所述第N行补偿电容的第一金属层的非重叠区域位于所述重叠区域的右边，组成第N行补偿电容的第二金属层的非重叠区域位于所述重叠区域的左边，组成所述第N+1行补偿电容的第一金属层的非重叠区域位于所述重叠区域的左边，组成所述第N+1行补偿电容的第二金属层的非重叠区域位于所述重叠区域的右边。
如果所述数据线相对所述扫描线向左偏移且所述第N行TFT电容增大，则组成所述第N行补偿电容的第一金属层的非重叠区域位于所述重叠区域的左边，组成第N行补偿电容的第二金属层的非重叠区域位于所述重叠区域的右边，组成所述第N+1行补偿电容的第一金属层的非重叠区域位于所述重叠区域的右边，组成所述第N+1行补偿电容的第二金属层的非重叠区域位于所述重叠区域的左边。
本发明实施例提供一种显示装置，包括对盒设置的彩膜基板和上述的阵列基板。
本发明实施例提供的阵列基板和显示装置，通过在每行扫描线上设置与栅极驱动电路连接的补偿电容，第N行补偿电容和第N+1行补偿电容的大小变化方向相反，且第N行补偿电容的大小变化方向与第N+1行TFT电容的大小变化方向相同，这样，当数据线发生偏移时，第N行和第N+1行的TFT电容变化量相同，第N行和第N+1行TFT电容变化方向相反，而第N行补偿电容变化方向与第N+1行TFT电容变化方向相同，从而可以通过补偿电容的调节，使得相邻两行的总体电容量相当，从而减少了由于相邻两行电容量不同导致灰阶亮度差异而产生的显示不良的问题。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在所写的说明书、权利要求书、以及附图中所特别指出的结构来实现和获得。
附图说明
此处所说明的附图用来提供对本发明的进一步理解，构成本发明的一部分，本发明的示意性实施例及其说明用于解释本发明，并不构成对本发明的不当限定。在附图中：
图1a为现有技术中，阵列基板的结构示意图；
图1b为现有技术中，数据线向右偏移后的阵列基板的结构示意图；
图2为本发明实施例中，第一种阵列基板的结构示意图；
图3为本发明实施例中，补偿电容的结构示意图；
图4为本发明实施例中，第二种阵列基板的结构示意图。
具体实施方式
为了减少由于数据线偏移使得相邻两行电容量不同，进而导致相邻两行由于灰阶亮度差异而产生的显示不良的问题，本发明实施例提供一种阵列基板和显示装置。
以下结合说明书附图对本发明的优选实施例进行说明，应当理解，此处所描述的优选实施例仅用于说明和解释本发明，并不用于限定本发明，并且在不冲突的情况下，本发明中的实施例及实施例中的特征可以相互组合。
实施例一
如图2所示，为本发明实施例提供的阵列基板的第一种结构示意图。本发明实施例提供的阵列基板上设置有横纵交错的扫描线和数据线，每行扫描线上均设置有栅极驱动电路，在每行扫描线上还设置有与该行栅极驱动电路连接的补偿电容。如图3所示，为补偿电容的结构示意图，补偿电容由交错设置的第一金属层31和第二金属层32的重叠区域33组成，其中，第一金属层31的重叠区域通过绝缘层与述第二金属层32的重叠区域隔绝。
具体实施时，对于重叠区域可以设计为任何形状，本发明实施例对此不做限定。较佳的，为了便于工艺上实现，第一金属层31、第二金属层32和重叠区域33可以为矩形。更佳的，该矩形区域的一边可以与数据线平行，这样，可以更加精确的控制，提高电容补偿效果。
具体实施时，第一金属层31可以采用与扫描线相同的金属材料，第二金属层32可以采用与数据线层相同的金属材料。其中，第N行补偿电容和第N+1行补偿电容的大小变化方向相反，且第N行补偿电容的大小变化方向与第N+1行TFT电容的大小变化方向相同，N为大于等于1的自然数。
第一金属层31与第二金属层32之间的重叠面积与补偿电容量大小成正比，重叠面积越大，则补偿电容量也越大，而重叠面积越小，则补偿电容量也越小，因此，本发明实施例中可以通过控制第一金属层31和第二金属层32之间的重叠面积实现对补偿电容大小的控制。其中，组成第N行和第N+1行补偿电容的第一金属层的非重叠区域和第二金属层的非重叠区域与所述重叠区域的相对位置相反。
具体的，可以如图2所示，第N行补偿电容的第一金属层的非重叠区域位于重叠区域的左侧，第N行补偿电容的第二金属层的非重叠区域位于重叠区域的右侧，而第N+1行补偿电容的第一金属层的非重叠区域位于重叠区域的右侧，第N+1行补偿电容的第二金属层的非重叠区域位于重叠区域的左侧。
以图2所示的阵列基板为例，如果数据线相对扫描线向右发生偏移，且使得第N行的TFT电容变小，第N+1行的TFT电容变大，为了使得第N行和第N+1行总体电容量相当，则第N行的补偿电容应变大(其与第N+1行TFT电容的大小变化方向相同)，亦即第一金属层31与第二金属层32之间的重叠面积应变大，第N+1行补偿电容应变小(其与第N行补偿电容的大小变化方向相反)，亦即第一金属层31与第二金属层32之间的重叠面积应变小。而由于当数据线相对扫描线向右发生偏移时，与扫描线采用相同材料的第一金属层31也将相对扫描线向右偏移，对于第N行来说，为了保证第一金属层31相对扫描线向右偏移时第一金属层31与第二金属层32之间的重叠面积变大，因此，第一金属层31的非重叠区域位于重叠区域的左边，第二金属层32的非重叠区域位于所述重叠区域的右边。而对于第N+1行来说，为了保证第一金属层31相对扫描线向右偏移时第一金属层31与第二金属层32之间的重叠面积变小，因此，第一金属层31的非重叠区域位于重叠区域的右边，第二金属层32的非重叠区域位于重叠区域的左边。
同样，如果数据线相对扫描线向右发生偏移，且使得第N行的TFT电容变大，第N+1行的TFT电容变小，为了使得第N行和第N+1行总体电容量相当，则第N行的补偿电容应变小(其与第N+1行TFT电容的大小变化方向相同)，亦即第一金属层31与第二金属层32之间的重叠面积应变小，第N+1行补偿电容应变大(其与第N行补偿电容的大小变化方向相反)，亦即第一金属层31与第二金属层32之间的重叠面积应变大。而由于当数据线相对扫描线向右发生偏移时，与扫描线采用相同材料的第一金属层31也将相对扫描线向右偏移，对于第N行来说，为了保证第一金属层31相对扫描线向右偏移时第一金属层31与第二金属层32之间的重叠面积变小，因此，第一金属层31的非重叠区域位于重叠区域的右边，第二金属层32的非重叠区域位于重叠区域的左边。而对于第N+1行来说，为了保证第一金属层31相对扫描线向右偏移时第一金属层31与第二金属层32之间的重叠面积变大，因此，第一金属层31的非重叠区域位于重叠区域的左边，第二金属层32的非重叠区域位于重叠区域的右边。
相应的，如果数据线相对扫描线向左发生偏移，且使得第N行的TFT电容变小，第N+1行的TFT电容变大，为了使得第N行和第N+1行总体电容量相当，则第N行的补偿电容应变大(其与第N+1行TFT电容的大小变化方向相同)，亦即第一金属层31与第二金属层32之间的重叠面积应变大，第N+1行补偿电容应变小(其与第N行补偿电容的大小变化方向相反)，亦即第一金属层31与第二金属层32之间的重叠面积应变小。而由于当数据线相对扫描线向左发生偏移时，与扫描线采用相同材料的第一金属层31也将相对扫描线向左偏移，对于第N行来说，为了保证第一金属层31相对扫描线向左偏移时第一金属层31与第二金属层32之间的重叠面积变大，因此，第一金属层31的非重叠区域位于重叠区域的右边，第二金属层32的非重叠区域位于重叠区域的左边。而对于第N+1行来说，为了保证第一金属层31相对扫描线向左偏移时第一金属层31与第二金属层32之间的重叠面积变小，因此，第一金属层31的非重叠区域位于重叠区域的左边，第二金属层32的非重叠区域位于重叠区域的右边。
同样，如果数据线相对扫描线向左发生偏移，且使得第N行的TFT电容变大，第N+1行的TFT电容变小，为了使得第N行和第N+1行总体电容量相当，则第N行的补偿电容应变小(其与第N+1行TFT电容的大小变化方向相同)，亦即第一金属层31与第二金属层32之间的重叠面积应变小，第N+1行补偿电容应变大(其与第N行补偿电容的大小变化方向相反)，亦即第一金属层31与第二金属层32之间的重叠面积应变大。而由于当数据线相对扫描线向左发生偏移时，与扫描线采用相同材料的第一金属层31也将相对扫描线向左偏移，对于第N行来说，为了保证第一金属层31相对扫描线向左偏移时第一金属层31与第二金属层32之间的重叠面积变小，因此，第一金属层31的非重叠区域位于重叠区域的左边，第二金属层32的非重叠区域位于重叠区域的右边。而对于第N+1行来说，为了保证第一金属层31相对扫描线向左偏移时第一金属层31与第二金属层32之间的重叠面积变大，因此，第一金属层31应的非重叠区域位于重叠区域的右边，第二金属层32的非重叠区域位于重叠区域的左边。
具体实施时，本发明实施例提供的阵列基板可以有以下两种实施方式。
实施方式一、补偿电容位于栅极驱动电路的输入端，即图2所示的阵列基板的结构示意图。这种实施方式下，补偿电容的一端与GOD的输入端连接，另一端与显示区域连接。
实施方式二、补偿电容位于栅极驱动电路的输出端，如图4所示，其中，补偿电容的一端与栅极驱动电路的输出端连接，另一端与控制信号端连接。
本发明实施例提供的阵列基板，通过在每一行栅极驱动电路的输入端或者输出端设置一个补偿电容，通过控制组成补偿电容的第一金属层和第二金属层的相对位置来调节补偿电容大小，该补偿电容大小变化方向与同行的TFT电容大小变化方向相反，与相邻行的TFT电容大小变化方向相同，且相邻行的补偿电容大小变化方向相反。这样，在数据线发生偏移时，通过补偿电容调节相邻行的总电容量相当，减少相邻行之间的灰阶差异，从而避免了画面显示不均、闪烁等显示不良问题的发生。
基于同一发明构思，本发明实施例还提供了一种显示装置，其包括对盒设置的彩膜基板和上述提供的阵列基板。
尽管已描述了本发明的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例做出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本发明范围的所有变更和修改。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (11)

1.一种阵列基板，所述阵列基板上设置有横纵交错的扫描线和数据线，每行扫描线上均设置有栅极驱动电路，其特征在于，
所述每行扫描线上还设置有与所述栅极驱动电路连接的补偿电容，所述补偿电容由交错设置的第一金属层和第二金属层的重叠区域组成，所述第一金属层的重叠区域通过绝缘层与所述第二金属层的重叠区域隔绝，其中：
第N行补偿电容和第N+1行补偿电容的大小变化方向相反，且第N行补偿电容的大小变化方向与第N+1行TFT电容的大小变化方向相同，N为大于等于1的自然数。
2.如权利要求1所述的阵列基板，其特征在于，所述重叠区域为矩形。
3.如权利要求2所述的阵列基板，其特征在于，所述矩形的一边与所述数据线平行。
4.如权利要求1所述的阵列基板，其特征在于，组成第N行和第N+1行补偿电容的第一金属层的非重叠区域和第二金属层的非重叠区域与所述重叠区域的相对位置相反。
5.如权利要求1所述的阵列基板，其特征在于，所述补偿电容设置于所述栅极驱动电路的输入端或者输出端。
6.如权利要求1～5任一权利要求所述的阵列基板，其特征在于，所述第一金属层采用与扫描线相同的金属材料；所述第二金属层采用与数据线相同的金属材料。
7.如权利要求6所述的阵列基板，其特征在于，如果所述数据线相对所述扫描线向右偏移且第N行TFT电容减小，第N+1行的TFT电容变大，则组成所述第N行补偿电容的第一金属层的非重叠区域位于所述重叠区域的左边，组成第N行补偿电容的第二金属层的非重叠区域位于所述重叠区域的右边，组成所述第N+1行补偿电容的第一金属层的非重叠区域位于所述重叠区域的右边，组成所述第N+1行补偿电容的第二金属层的非重叠区域位于所述重叠区域的左边。
8.如权利要求6所述的阵列基板，其特征在于，如果所述数据线相对所述扫描线向右偏移且第N行TFT电容增大，第N+1行的TFT电容变小，则组成所述第N行补偿电容的第一金属层的非重叠区域位于所述重叠区域的右边，组成第N行补偿电容的第二金属层的非重叠区域位于所述重叠区域的左边，组成所述第N+1行补偿电容的第一金属层的非重叠区域位于所述重叠区域的左边，组成所述第N+1行补偿电容的第二金属层的非重叠区域位于所述重叠区域的右边。
9.如权利要求6所述的阵列基板，其特征在于，如果所述数据线相对所述扫描线向左偏移且第N行TFT电容减小，第N+1行的TFT电容变大，则组成所述第N行补偿电容的第一金属层的非重叠区域位于所述重叠区域的右边，组成第N行补偿电容的第二金属层的非重叠区域位于所述重叠区域的左边，组成所述第N+1行补偿电容的第一金属层的非重叠区域位于所述重叠区域的左边，组成所述第N+1行补偿电容的第二金属层的非重叠区域位于所述重叠区域的右边。
10.如权利要求6所述的阵列基板，其特征在于，如果所述数据线相对所述扫描线向左偏移且第N行TFT电容增大，第N+1行的TFT电容变小，则组成所述第N行补偿电容的第一金属层的非重叠区域位于所述重叠区域的左边，组成第N行补偿电容的第二金属层的非重叠区域位于所述重叠区域的右边，组成所述第N+1行补偿电容的第一金属层的非重叠区域位于所述重叠区域的右边，组成所述第N+1行补偿电容的第二金属层的非重叠区域位于所述重叠区域的左边。
11.一种显示装置，其特征在于，包括对盒设置的彩膜基板和如权利要求1～10任一权利要求所述的阵列基板。
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CN106773383A (zh) * 2016-12-14 2017-05-31 武汉华星光电技术有限公司 一种显示面板
CN108037626A (zh) * 2017-11-29 2018-05-15 武汉天马微电子有限公司 一种显示面板及显示装置
CN109143705A (zh) * 2018-09-18 2019-01-04 深圳市华星光电技术有限公司 提高显示清晰度的面板
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CN110928082B (zh) * 2019-11-01 2022-06-10 武汉华星光电技术有限公司 一种阵列基板和显示面板
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