CN104697639A - 一种mocvd设备实时测温系统自校准装置及方法 - Google Patents
一种mocvd设备实时测温系统自校准装置及方法 Download PDFInfo
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- CN104697639A CN104697639A CN201310655598.3A CN201310655598A CN104697639A CN 104697639 A CN104697639 A CN 104697639A CN 201310655598 A CN201310655598 A CN 201310655598A CN 104697639 A CN104697639 A CN 104697639A
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000009529 body temperature measurement Methods 0.000 title claims abstract description 28
- 230000005855 radiation Effects 0.000 claims abstract description 62
- 230000003287 optical effect Effects 0.000 claims abstract description 47
- 238000001514 detection method Methods 0.000 claims abstract description 15
- 238000004364 calculation method Methods 0.000 claims abstract description 3
- 238000005316 response function Methods 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000002310 reflectometry Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 230000004044 response Effects 0.000 claims description 6
- 238000001228 spectrum Methods 0.000 claims description 6
- 241000208340 Araliaceae Species 0.000 claims description 4
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 claims description 4
- 235000003140 Panax quinquefolius Nutrition 0.000 claims description 4
- 235000008434 ginseng Nutrition 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000003595 spectral effect Effects 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000008859 change Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000009897 systematic effect Effects 0.000 description 2
- 238000004861 thermometry Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
- G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0896—Optical arrangements using a light source, e.g. for illuminating a surface
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/60—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/80—Calibration
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
Claims (14)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310655598.3A CN104697639B (zh) | 2013-12-06 | 2013-12-06 | 一种mocvd设备实时测温系统自校准装置及方法 |
PCT/CN2014/084682 WO2015081727A1 (zh) | 2013-12-06 | 2014-08-19 | 一种mocvd设备实时测温系统自校准装置及方法 |
US16/319,323 US10957564B2 (en) | 2013-12-06 | 2014-08-19 | Self-calibration apparatus and method for real-time temperature measurement system of MOCVD device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310655598.3A CN104697639B (zh) | 2013-12-06 | 2013-12-06 | 一种mocvd设备实时测温系统自校准装置及方法 |
Publications (2)
Publication Number | Publication Date |
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CN104697639A true CN104697639A (zh) | 2015-06-10 |
CN104697639B CN104697639B (zh) | 2018-12-07 |
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CN201310655598.3A Active CN104697639B (zh) | 2013-12-06 | 2013-12-06 | 一种mocvd设备实时测温系统自校准装置及方法 |
Country Status (3)
Country | Link |
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US (1) | US10957564B2 (zh) |
CN (1) | CN104697639B (zh) |
WO (1) | WO2015081727A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105092053A (zh) * | 2015-09-06 | 2015-11-25 | 商洛学院 | 用于mocvd外延生长的三波长免修正红外监测方法及装置 |
CN105506733A (zh) * | 2015-12-23 | 2016-04-20 | 圆融光电科技股份有限公司 | 外延生长设备 |
CN107611049A (zh) * | 2017-09-18 | 2018-01-19 | 佛山科学技术学院 | 一种基于实时光谱的外延片多参数原位监测方法和装置 |
CN113252208A (zh) * | 2021-04-07 | 2021-08-13 | 中山德华芯片技术有限公司 | 一种适用于外延材料的rt探测器及其应用 |
CN114927395A (zh) * | 2022-04-24 | 2022-08-19 | 电子科技大学 | 一种实时控制NEA GaN电子源反射率的方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104697645B (zh) * | 2013-12-05 | 2017-11-03 | 北京智朗芯光科技有限公司 | 一种在线实时检测外延片温度的装置及方法 |
US11062433B2 (en) | 2017-03-13 | 2021-07-13 | Carmel Haifa University Economic Corporation Ltd. | Target-less calibration of turbid media |
JP2020188191A (ja) * | 2019-05-16 | 2020-11-19 | 東京エレクトロン株式会社 | 基板処理装置、及び照射位置調整方法 |
CN111254487B (zh) * | 2020-01-20 | 2022-03-22 | 北京北方华创微电子装备有限公司 | 外延设备的测温装置以及外延设备 |
CN114507900B (zh) * | 2022-03-04 | 2023-04-07 | 季华实验室 | 一种反应腔内表面保护装置、外延反应监控装置及方法 |
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CN101144742A (zh) * | 2006-09-13 | 2008-03-19 | 中国科学院沈阳自动化研究所 | 金属粉末激光成形过程中温度场检测方法及其系统装置 |
CN102865930A (zh) * | 2012-10-09 | 2013-01-09 | 中北大学 | 基于比色法的镁及镁合金燃点温度的测试装置及使用方法 |
CN102889934A (zh) * | 2011-07-18 | 2013-01-23 | 甘志银 | 实时测量温度的方法 |
CN202814557U (zh) * | 2012-10-12 | 2013-03-20 | 于坤 | 一种实时测量非透明物体温度和光谱发射率的装置 |
CN103411684A (zh) * | 2013-07-17 | 2013-11-27 | 中微半导体设备(上海)有限公司 | 测量反应腔室内薄膜温度的方法 |
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KR970053235A (ko) * | 1995-12-20 | 1997-07-31 | 양승택 | 열식각에 의한 기판의 산화층 제거완료를 실시간으로 감지하는 방법 |
US6280790B1 (en) * | 1997-06-30 | 2001-08-28 | Applied Materials, Inc. | Reducing the deposition rate of volatile contaminants onto an optical component of a substrate processing system |
JP4052514B2 (ja) * | 2003-03-31 | 2008-02-27 | 株式会社チノー | 放射温度測定装置 |
DE10329205A1 (de) * | 2003-06-28 | 2005-01-27 | Infineon Technologies Ag | Verfahren und Vorrichtung zum berührungslosen Bestimmen der Oberflächentemperatur eines Halbleiterwafers |
US20080124453A1 (en) * | 2006-11-28 | 2008-05-29 | Applied Matrials, Inc. | In-situ detection of gas-phase particle formation in nitride film deposition |
CN201561803U (zh) * | 2009-03-20 | 2010-08-25 | 陆文强 | 一种红外双波长非接触式测温装置 |
CN102455222B (zh) * | 2010-10-21 | 2013-11-13 | 甘志银 | 金属有机物化学气相沉积设备中实时测量薄膜温度的方法及测量装置 |
US20130167769A1 (en) * | 2011-12-29 | 2013-07-04 | Bassam Shamoun | Targeted temperature compensation in chemical vapor deposition systems |
CN202903332U (zh) * | 2012-10-09 | 2013-04-24 | 甘志银 | 化学气相沉积设备的红外辐射测温校准装置 |
CN104089703A (zh) * | 2014-07-09 | 2014-10-08 | 北京智朗芯光科技有限公司 | 半导体薄膜反应腔辅助温度校准装置 |
-
2013
- 2013-12-06 CN CN201310655598.3A patent/CN104697639B/zh active Active
-
2014
- 2014-08-19 WO PCT/CN2014/084682 patent/WO2015081727A1/zh active Application Filing
- 2014-08-19 US US16/319,323 patent/US10957564B2/en active Active
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CN101144742A (zh) * | 2006-09-13 | 2008-03-19 | 中国科学院沈阳自动化研究所 | 金属粉末激光成形过程中温度场检测方法及其系统装置 |
CN102889934A (zh) * | 2011-07-18 | 2013-01-23 | 甘志银 | 实时测量温度的方法 |
CN102865930A (zh) * | 2012-10-09 | 2013-01-09 | 中北大学 | 基于比色法的镁及镁合金燃点温度的测试装置及使用方法 |
CN202814557U (zh) * | 2012-10-12 | 2013-03-20 | 于坤 | 一种实时测量非透明物体温度和光谱发射率的装置 |
CN103411684A (zh) * | 2013-07-17 | 2013-11-27 | 中微半导体设备(上海)有限公司 | 测量反应腔室内薄膜温度的方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105092053A (zh) * | 2015-09-06 | 2015-11-25 | 商洛学院 | 用于mocvd外延生长的三波长免修正红外监测方法及装置 |
CN105092053B (zh) * | 2015-09-06 | 2017-12-22 | 商洛学院 | 用于mocvd外延生长的三波长免修正红外监测方法及装置 |
CN105506733A (zh) * | 2015-12-23 | 2016-04-20 | 圆融光电科技股份有限公司 | 外延生长设备 |
CN107611049A (zh) * | 2017-09-18 | 2018-01-19 | 佛山科学技术学院 | 一种基于实时光谱的外延片多参数原位监测方法和装置 |
CN107611049B (zh) * | 2017-09-18 | 2019-10-01 | 佛山科学技术学院 | 一种基于实时光谱的外延片多参数原位监测方法和装置 |
CN113252208A (zh) * | 2021-04-07 | 2021-08-13 | 中山德华芯片技术有限公司 | 一种适用于外延材料的rt探测器及其应用 |
CN114927395A (zh) * | 2022-04-24 | 2022-08-19 | 电子科技大学 | 一种实时控制NEA GaN电子源反射率的方法 |
Also Published As
Publication number | Publication date |
---|---|
US20190237348A1 (en) | 2019-08-01 |
WO2015081727A1 (zh) | 2015-06-11 |
CN104697639B (zh) | 2018-12-07 |
US10957564B2 (en) | 2021-03-23 |
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