CN104678274A - Nondestructive test method of LED chips - Google Patents
Nondestructive test method of LED chips Download PDFInfo
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- CN104678274A CN104678274A CN201510119789.7A CN201510119789A CN104678274A CN 104678274 A CN104678274 A CN 104678274A CN 201510119789 A CN201510119789 A CN 201510119789A CN 104678274 A CN104678274 A CN 104678274A
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Abstract
The invention discloses a nondestructive test method of LED chips. The nondestructive test method comprises the following steps: (1) preparing electrode conducting films, wherein each electrode conducting film comprises a transparent insulated substrate and a transparent conductive groove formed in the substrate; (2) covering the surfaces of LED chips to be tested with the electrode conducting films, so that positive electrodes and negative electrodes of the LED chips are located in the corresponding transparent conductive grooves; (3) pricking two probes of an automatic testing machine in the electrode conducting films to contact with location regions of the positive electrodes and the negative electrodes; (4) removing the electrode conducting films after the test is completed. The nondestructive test method replaces the direct contact with indirect contact between the test probes and the electrodes of the LED chips, and the surfaces of the chip electrodes are covered by the electrode conducting films as protection, so that the problem of probe marks in the test of LED chips is solved, the nondestructive test is realized, and the electrodes are protected; meanwhile, the nondestructive test method is simple to operate, increases the use frequency of test probes, and reduces the test costs.
Description
Technical field
The present invention relates to the method for testing LED chip photoelectric properties and outward appearance, belonging to LED chip technical field of measurement and test.
Background technology
LED chip, as the core component of semiconductor lighting, ensures that its basic photoelectric properties and appearance requirement are the bases of following process.After the production and processing of LED chip completes, need to test chip, to carry out grade separation according to its photoelectric parameter.Along with the development of encapsulation technology and application, the aspect such as photoelectric properties, outward appearance zero defect of present stage LED market to LED chip is proposed higher stricter requirement, also high-quality test is had higher requirement, especially in nondestructive test simultaneously.
In existing LED chip measuring technology, be generally test with automatic test machine, as shown in Figure 1, by being pricked on positive and negative two electrodes of LED chip 2 by two probes 1, thus turning circuit is tested.There is following drawback in presently used this method of testing: 1. because probe tip is sharper, pricks and there will be some either large or small pin traces on electrode, if carry out second test or three tests to chip, just there will be crosspointer trace or three pin traces; If 2. probe used for a long time or was worn, easily there is the excessive long phenomenon of pin trace; 3. personnel adjust before testing during pin and easily occur that pin trace departs from electrode centers point, and occur the phenomenon that pin trace is inclined.The appearance that is excessive, excessively inclined and spininess trace of pin trace has damaging to chip electrode and has a strong impact on appearance requirement.As shown in the chip electrode appearance after the existing LED chip method of testing test that Fig. 2 provides, LED chip exist large and inclined electrode needle trace 3 and spininess trace 4.
Chinese patent literature CN103869212A disclosed " a kind of no needle mark method of testing " proposes a kind of method solving pin trace problem in circuit board testing, the method arranges conducting resinl respectively on the first non-conducting carrier, the second non-conducting carrier, and each described conducting resinl is connected with testing circuit respectively; The conducting resinl of described first non-conducting carrier is contacted the top line of circuit board to be detected, by the wiring underlayer of the described circuit board to be detected of the conducting resinl of described second non-conducting carrier contact; Wherein, described top line and wiring underlayer are on the consolidated network of described circuit board to be detected; According to the detection instruction that described testing circuit provides, determine the testing result of described circuit board to be detected.The method adopt the way of contact in face and face replace a little with the contact in face, the pin trace problem in solution circuit board testing, realizes nondestructive test.But the method belongs to technical field of circuit board detection, the electrode damage problem in LED chip test cannot be solved.
Summary of the invention
For the deficiency that existing LED chip method of testing exists, the invention provides a kind of simple to operate, can not a kind of non-destructive testing method of LED chip of lesion electrode.
The non-destructive testing method of LED chip of the present invention, is test at LED chip surface coverage one deck electrodes conduct film again, comprises the following steps:
(1) electrodes conduct film is prepared, this electrodes conduct film comprises transparent insulation substrate and is arranged on suprabasil electrically conducting transparent groove, electrically conducting transparent groove comprises positive conductive groove and negative conductive groove, and the shape of the shape of positive conductive groove and negative conductive groove, size and relative position and the positive and negative electrode of the LED chip that needs are tested, size and relative position are consistent;
(2) electrodes conduct film is covered the LED chip surface needing test, make the positive conductive groove of electrodes conduct film and negative conductive groove is corresponding with the positive and negative electrode of LED chip overlaps;
(3) LED chip of coated electrode conducting film is scanned on automatic test machine, the position of positive and negative electrode on LED chip is found through electrodes conduct film, two of automatic test machine probes are pricked on electrodes conduct film and contacts the positive and negative electrode band of position, start test;
(4) be completed after again by electrodes conduct film remove (this electrodes conduct film can reuse).
The thickness of described electrodes conduct film is 45 μm-60 μm, and optimum thickness is 55 μm.
The substrate of described step (1) is provided with corresponding telltale mark with on the LED chip needing to test, to make positive conductive groove and negative conductive groove quick and precisely locate with needing the positive and negative electrode of the LED chip tested.
Electrodes conduct film (wavelength 380-760nm) in visible-range has good transmittance, and electric conductivity is high, the conducting film that specific contact resistivity value is low.Electrodes conduct film has that transparency is high, good conductivity, can be used repeatedly, pollution-free, the feature that test chip surface played to test protection.This electrodes conduct film has point-like conductive structure simultaneously, namely only with LED chip electrode contact place, there is electric conductivity, substrate has insulativity, light transmission and anti fouling performance, and electrically conducting transparent groove by forming in conductive material etching, have the advantages that transmittance is high, ratio resistance value is low, good conductivity, hardness are large.The integral layout of electrodes conduct film and shape are consistent with test LED chip, and arrange correspondence markings, to be accurately positioned on LED chip electrode.
LED chip non-destructive testing method of the present invention; test probe is utilized to replace directly contacting with the indirect contact of LED chip electrode; at chip electrode surface coverage one deck electrodes conduct film as protection; solve the pin trace problem in LED chip test; realize nondestructive test; protect electrode, simultaneously simple to operate, the frequency of usage that adds testing needle of the method, reduces testing cost.
Accompanying drawing explanation
Fig. 1 is existing LED chip method of testing schematic diagram.
Fig. 2 is the chip electrode appearing diagram after the test of existing LED chip method of testing.
Fig. 3 is the schematic diagram of LED chip non-destructive testing method of the present invention.
Fig. 4 is the chip electrode appearing diagram after LED chip non-destructive testing method of the present invention test.
Fig. 5 is the structural representation of electrodes conduct film in the present invention.
Wherein: 1, probe, 2, LED chip, 3, large and inclined pin trace, 4, spininess trace, 5, electrodes conduct film, 6, positive electrode, 7, negative electrode, 8, electrically conducting transparent groove, 9, transparent insulation substrate.
Embodiment
LED chip non-destructive testing method of the present invention, comprises the following steps:
(1) electrodes conduct film is prepared
The structure of this electrodes conduct film as shown in Figure 5, comprise transparent insulation substrate 9 and be arranged on suprabasil electrically conducting transparent groove 8, electrically conducting transparent groove 8 can be divided into positive conductive groove and negative conductive groove, the shape of the shape and size of positive conductive groove and the positive electrode of LED chip 2 and consistent size, the shape of the shape and size of negative conductive groove and the negative electrode of LED chip 2 and consistent size.According to the difference of LED chip electrode pattern, difform electrically conducting transparent groove can be set.Substrate 9 has insulativity, light transmission and anti fouling performance, and electrically conducting transparent groove 8 by forming in conductive material etching, has the advantages that transmittance is high, ratio resistance value is low, good conductivity, hardness are large.The degree of depth of electrically conducting transparent groove 8 can be consistent with the thickness of electrode of LED chip 2.Like this, the integral layout of electrodes conduct film 5 and shape consistent with LED chip 2.The thickness of electrodes conduct film 5 is 45 μm-60 μm, and optimum thickness is 55 μm.
In order to make the positive and negative electrode of positive conductive groove and negative conductive groove and LED chip 2 quick and precisely locate, corresponding telltale mark is set with on LED chip 2, for next step is ready in substrate 9.
(2) as shown in Figure 3, at electrodes conduct film 5 prepared by surface coverage one deck step (1) of the LED chip 2 needing test, LED chip 2 is positioned at the below of electrodes conduct film 5, by aiming at substrate 9 and the telltale mark on LED chip 2, the positive and negative electrode of LED chip 2 is positioned in corresponding positive and negative conductive trough exactly.Electrodes conduct film 5 has point-like conductive structure, only has electric conductivity with the contact position of LED chip 2 electrode.Electrodes conduct film 5 is pollution-free, play protection to test chip surface.
(3) as shown in Figure 3, on full-automatic testing board, two probes 1 are very clearly seen the position of LED chip 2 positive and negative electrode through electrodes conduct film 5, two probes 1 are pricked and electrodes conduct film 5 contacts the LED chip 2 positive and negative electrode band of position and start test.
Method of testing before employing the present invention is for shown in Fig. 1, two probes 1 of full-automatic testing board are directly pricked on two electrodes of LED chip 2, cause electrode occurring pin trace to there is the large and inclined electrode needle trace 3 shown in Fig. 2 and spininess trace 4, and have a strong impact on presentation quality.
(4) be completed after electrodes conduct film 5 is removed.Electrodes conduct film 5 can be used repeatedly.
Fig. 4 is the chip appearance after probe 1 and chip 2 being tested by the mode of electrodes conduct film 5 indirect contact by above step, positive electrode 6 and negative electrode 7 test rear all no needle marks, achieve no needle mark nondestructive test, improve product appearance quality greatly.
Claims (4)
1. a non-destructive testing method for LED chip, is characterized in that, comprises the following steps:
(1) prepare electrodes conduct film, this electrodes conduct film comprises transparent insulation substrate and is arranged on suprabasil electrically conducting transparent groove, the shape and size of electrically conducting transparent groove and the positive and negative electrode shape of LED chip and consistent size;
(2) will the LED chip surface coverage top electrode conducting film of test be needed, make the positive and negative electrode of LED chip be positioned at corresponding electrically conducting transparent groove;
(3) LED chip of coated electrode conducting film is scanned on automatic test machine, the position of positive and negative electrode on LED chip is found through electrodes conduct film, two of automatic test machine probes are pricked on electrodes conduct film and contacts the positive and negative electrode band of position, start test;
(4) be completed after again electrodes conduct film is removed.
2. the non-destructive testing method of LED chip according to claim 1, it is characterized in that, the thickness of described electrodes conduct film is 45 μm-60 μm.
3. the non-destructive testing method of LED chip according to claim 1, it is characterized in that, the thickness of described electrodes conduct film is 55 μm.
4. the non-destructive testing method of LED chip according to claim 1, is characterized in that, the LED chip that the substrate of described step (1) and needing is tested is provided with corresponding telltale mark.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510119789.7A CN104678274A (en) | 2015-03-19 | 2015-03-19 | Nondestructive test method of LED chips |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510119789.7A CN104678274A (en) | 2015-03-19 | 2015-03-19 | Nondestructive test method of LED chips |
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| CN104678274A true CN104678274A (en) | 2015-06-03 |
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| CN201510119789.7A Pending CN104678274A (en) | 2015-03-19 | 2015-03-19 | Nondestructive test method of LED chips |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109755144A (en) * | 2017-11-07 | 2019-05-14 | 山东浪潮华光光电子股份有限公司 | A kind of test method improving GaN base LED chip appearance yield |
| CN111665428A (en) * | 2019-03-08 | 2020-09-15 | 致茂电子(苏州)有限公司 | Electronic component testing method and testing probe |
| CN111863650A (en) * | 2020-07-14 | 2020-10-30 | 南昌凯迅光电有限公司 | Test method for improving appearance of LED chip |
| CN112447877A (en) * | 2019-08-30 | 2021-03-05 | 盐城阿特斯阳光能源科技有限公司 | Second-level label and preparation method thereof |
| CN112447878A (en) * | 2019-08-30 | 2021-03-05 | 盐城阿特斯阳光能源科技有限公司 | Preparation method of secondary standard tablet |
| CN115356560A (en) * | 2022-08-12 | 2022-11-18 | 福建兆元光电有限公司 | Testing method of integrated Micro LED |
| TWI819619B (en) * | 2022-04-22 | 2023-10-21 | 大陸商深超光電（深圳）有限公司 | Light emitting diode detection device and light emitting diode detection method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4775640A (en) * | 1987-05-01 | 1988-10-04 | American Telephone And Telegraph Company | Electronic device test method and apparatus |
| CN1692486A (en) * | 2002-10-28 | 2005-11-02 | 东京毅力科创株式会社 | Probe mark reader and probe mark reading method |
| CN101105519A (en) * | 2007-08-03 | 2008-01-16 | 重庆大学 | LED chip/ wafer non-contact type check-up method |
| CN201311466Y (en) * | 2008-10-24 | 2009-09-16 | 珠海华冠光电技术有限公司 | LED testing set |
| CN103884974A (en) * | 2012-12-21 | 2014-06-25 | 新世纪光电股份有限公司 | LED detection apparatus |
-
2015
- 2015-03-19 CN CN201510119789.7A patent/CN104678274A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4775640A (en) * | 1987-05-01 | 1988-10-04 | American Telephone And Telegraph Company | Electronic device test method and apparatus |
| CN1692486A (en) * | 2002-10-28 | 2005-11-02 | 东京毅力科创株式会社 | Probe mark reader and probe mark reading method |
| CN101105519A (en) * | 2007-08-03 | 2008-01-16 | 重庆大学 | LED chip/ wafer non-contact type check-up method |
| CN201311466Y (en) * | 2008-10-24 | 2009-09-16 | 珠海华冠光电技术有限公司 | LED testing set |
| CN103884974A (en) * | 2012-12-21 | 2014-06-25 | 新世纪光电股份有限公司 | LED detection apparatus |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109755144A (en) * | 2017-11-07 | 2019-05-14 | 山东浪潮华光光电子股份有限公司 | A kind of test method improving GaN base LED chip appearance yield |
| CN111665428A (en) * | 2019-03-08 | 2020-09-15 | 致茂电子(苏州)有限公司 | Electronic component testing method and testing probe |
| CN112447877A (en) * | 2019-08-30 | 2021-03-05 | 盐城阿特斯阳光能源科技有限公司 | Second-level label and preparation method thereof |
| CN112447878A (en) * | 2019-08-30 | 2021-03-05 | 盐城阿特斯阳光能源科技有限公司 | Preparation method of secondary standard tablet |
| CN111863650A (en) * | 2020-07-14 | 2020-10-30 | 南昌凯迅光电有限公司 | Test method for improving appearance of LED chip |
| TWI819619B (en) * | 2022-04-22 | 2023-10-21 | 大陸商深超光電（深圳）有限公司 | Light emitting diode detection device and light emitting diode detection method |
| CN115356560A (en) * | 2022-08-12 | 2022-11-18 | 福建兆元光电有限公司 | Testing method of integrated Micro LED |
| WO2024031819A1 (en) * | 2022-08-12 | 2024-02-15 | 福建兆元光电有限公司 | Test method for integrated micro led |
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Application publication date: 20150603 |
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