CN109755144A - A kind of test method improving GaN base LED chip appearance yield - Google Patents
A kind of test method improving GaN base LED chip appearance yield Download PDFInfo
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- CN109755144A CN109755144A CN201711087144.5A CN201711087144A CN109755144A CN 109755144 A CN109755144 A CN 109755144A CN 201711087144 A CN201711087144 A CN 201711087144A CN 109755144 A CN109755144 A CN 109755144A
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Abstract
A kind of test method for improving GaN base LED chip appearance yield of the present invention.This method is to be placed on the Z-direction of anisotropic conductive film electrically conducting on chip electrode perpendicular to chip surface, it realizes that test probe is electrically connected with the non-contact of the chip electrode in the case where anisotropic conductive film is not necessarily to align with chip electrode, carries out LED core built-in testing.The present invention introduces anisotropic conductive film in LED core built-in testing, using the difference of its different dimensions electric conductivity, realizes the non-cpntact measurement of testing needle and chip electrode, the requirement for reaching non-destructive testing, improving GaN base LED chip appearance yield.
Description
Technical field
The present invention relates to a kind of test methods for improving GaN base LED chip appearance yield, belong to photoelectron technical field.
Background technique
Light emitting diode (LED) is a kind of semiconductor diode that can convert electrical energy into luminous energy, and LED chip is its core
Heart component.The preparation process of LED chip is complicated, and step is various, to determine that can LED work normally and light emitting diode
Various characteristics, it will usually each LED after cutting is tested, so as to according to its photoelectric parameter carry out grade separation.
GaN base LED is the LED to be shone based on GaN.GaN material has the direct broad-band gap being continuously adjusted between 1.9eV to 6.2eV,
The entire visible light from feux rouges to ultraviolet light can theoretically be completely covered, since the 1990s, people are developed
Blue-ray LED based on GaN, and by wavelength spread to green light and ultraviolet range, with the raising of GaN crystal quality, blue green light skill
Art is universal, in illumination, display, backlight, car light field extensive utilization, to improve using effect, and the market pair GaN base LED at this stage
The photoelectric properties of chip, appearance zero defect etc. are proposed higher tightened up requirement, while also to the test of high quality
More stringent requirements are proposed, especially in terms of nondestructive test.Core member device of the GaN base LED chip as semiconductor lighting
Part, guarantees its basic photoelectric properties and appearance requirement is the basis of following process.Since GaN chip is usually in coplanar preparation
Two electrodes of P N, it is larger in the accounting of chip area to lead to electrode area, once image knowledge will be influenced by occurring breakage on electrode
Not, chip is caused not to be identified, be not available.Existing chip testing is tested with automatic test machine, by visiting two
Needle is pricked respectively on positive and negative two electrodes of GaN LED chip, so that turning circuit is tested (such as Fig. 4).Due to probe pinpoint
Than sharp, bundle will appear some either large or small needle traces on positive and negative electrode at end, if again to chip carry out second test or
It tests three times, just will appear crosspointer trace or three needle traces, be worn too long when probe uses, it is easier to LED chip appearance occur
The excessive too long phenomenon of needle trace；These needle traces cause to damage to LED chip appearance.On the other hand, needle Shi Rongyi is adjusted before testing
There is needle trace and deviate electrode centers point, and the inclined phenomenon of needle trace occurs.Needle trace is excessive, excessively partially and the appearance of spininess trace is to chip
Electrode has damaging and seriously affects appearance requirement.
CN104678274A discloses a kind of non-destructive testing method of LED chip, covers one layer of electrode on LED chip surface
The method that conductive film is tested again, prepares electrodes conduct film, which includes transparent insulation substrate and be arranged in base
Electrically conducting transparent slot on bottom, electrically conducting transparent slot include positive conductive slot and negative conductive slot, positive conductive slot and negative conductive slot
Shape, size and relative position and need GaN LED chip to be tested positive and negative electrode shape, size and opposite position
It sets consistent；By electrodes conduct film be covered on need GaN LED chip to be tested surface, make electrodes conduct film positive conductive slot and
Negative conductive slot is corresponding with the positive and negative electrode of GaN LED chip to be overlapped.Conductive film needed for this method needs special facture conductive
Slot, since GaN base LED core chip size is at 150-300 μm, and P N electrode spacing conductive in chip only has 60-80 μm, at this
Conductive trough is made in one small spacing, undoubtedly increases production cost, while the contraposition of conductive film and pad is also required to backman
Tool realizes that high-precision is aligned.
Summary of the invention
For deficiency existing for existing GaN LED core chip test method, the present invention provides a kind of raising GaN base LED chip
The test method of appearance yield realizes the non-destructive testing of GaN LED core plate electrode.
Explanation of nouns:
Anisotropic conductive film: it is characterized in that the resistance characteristic of Z axis electrically conducting direction and XY insulating planar has obviously
Otherness, i.e., X Y-direction be more than a fixed spacing when (> 40 μm), Z-direction electrically conducting, X Y-direction will not electrically conducting.
After the difference of Z axis conduction resistance value and X/Y plane insulating resistance value is more than certain ratio, the good different side of conduction both can be described as
Property.
Apparatus for testing chip, also referred to as automatic test machine belong to test equipment known in this field, generally comprise scanning alignment dress
Set, detector, microscope carrier and data processing equipment, scanning alignment device obtains the location information of test LED chip, detector according to
LED chip location information controls probe and is electrically connected and is tested with the anode and cathode of the LED chip；Data processing equipment root
Classify according to test result to the flip LED chips.
Technical scheme is as follows:
A kind of test method improving GaN base LED chip appearance yield, it is characterised in that electrically lead anisotropic conductive film
Logical Z-direction is placed on chip electrode perpendicular to chip surface, and the feelings aligned with chip electrode are not necessarily in anisotropic conductive film
It realizes that test probe is electrically connected with the non-contact of the chip electrode under condition, carries out LED core built-in testing.
In more detail, a kind of test method improving GaN base LED chip appearance yield, comprising steps of
(1) it is located at chip electrode to be measured upward on test machine microscope carrier, is covered on chip top with anisotropic conductive film；
(2) test machine microscope carrier heating temperature is set as 80-200 DEG C, is heated to the anisotropic conductive film, keep temperature
80-200 DEG C, constant temperature 5-10min；
(3) it is scanned with the LED chip of the apparatus for testing chip covering anisotropic conductive film described to step (2), makes to survey
Two probes of trial assembly machine touch the corresponding anisotropic conductive film region of chip positive and negative electrode, and make the anisotropic conductive film
It is contacted with chip electrode；Start to test；
(4) remove anisotropic conductive film after being completed.
It is preferred according to the present invention, light transmittance > 30% of the anisotropic conductive film；Further preferably, the anisotropy
Light transmittance > 40% of conductive film, most preferably, the light transmittance of the anisotropic conductive film are 50-90%.Anisotropic conductive film is thick
Degree is not particularly limited.The anisotropic conductive film can be selected from any product of the producers such as Sony, Hitachi, hat product ACF16.It is excellent
Choosing, the anisotropic conductive film thickness 0.5-5mm, the further preferred anisotropic conductive film thickness 1-2mm.
Preferred according to the present invention, the GaN base LED chip is blue light GaN base LED chip, green light GaN base LED chip
Or ultraviolet light GaN base LED chip.
Preferred according to the present invention, in step (1), the chip to be measured is placed on blue film and is placed on test machine microscope carrier again.
Preferred according to the present invention, in step (1), the P/N electrode spacing of the chip to be measured is no less than 20 μm；Further
It is preferred that the P/N electrode spacing of the chip to be measured is 20-40 μm.
Preferred according to the present invention, in step (1), when chip to be measured is put, the distance between described chip is 15-220 μ
m.To meet test equipment image recognition.
It is preferred according to the present invention, testing needle contact pressure is adjusted in step (3), makes to correspond to N electrode test needle force
Needle force is tested greater than P electrode is corresponded to.Dynamics is well contacted with being able to achieve with P electrode and N electrode.
The method of the present invention is surveyed especially suitable for chips such as blue light GaN base LED, green light GaN base LED, ultraviolet light GaN base LED
Examination.The method of the present invention test object can be COW (Chip on wafer) state, i.e. chip front-end product, be also possible to COT
State, i.e. chip end product.Test the quantity of chip, arrangement mode meets test equipment image recognition.
Beneficial effects of the present invention:
1, anisotropic conductive film is placed on chip surface by method of the invention, using anisotropic conductive adhesive paste X Y-direction
Insulation, in the case where conductive film is not necessarily to align with chip electrode, can be realized test and visit in the characteristic of Z-direction electrically conducting
The non-cpntact measurement of needle and chip electrode, to realize non-destructive testing.
2, the method for the present invention can be used for testing voltage, brightness, wavelength, backward voltage, leakage current, lock stream under different electric currents
The various projects that the test machines such as body, half-peak breadth can be tested it is one or more.Applicability of the present invention is good, can guarantee project testing
Precision is good.
3, the present invention introduces anisotropic conductive film in GaN base LED core built-in testing, utilizes its different dimensions electric conductivity
Difference realizes the non-cpntact measurement of testing needle and chip electrode, reaches the requirement of non-destructive testing.For GaN base LED chip
Speech, since it is limited to current lead-through direction, with anisotropy conductive film compared be used common conductive film have it is unexpected
Excellent results.
4, the method that method of the invention compares other prior art non-destructive testings, it is easier, it is easy to operate, it is at low cost.
Detailed description of the invention
Fig. 1 is that 1 surface of embodiment covers the chip schematic diagram after anisotropic conductive film.
Fig. 2 is the chip schematic diagram of the covering anisotropic conductive film to be tested of embodiment 1.
1, chip, 2, probe, 3, P electrode (pad), 4, N electrode (pad), 5, anisotropic conductive film, 6 blue films, 7 tests
Airborne
Chip electrode appearance after Fig. 3 embodiment 1 is tested.
Fig. 4 is that existing conventional method tests chip schematic diagram.
Chip electrode appearance after the test of Fig. 5 prior art.8, testing needle trace.
Specific embodiment
The present invention will be further described with reference to the accompanying drawings and examples, but not limited to this.It is different used in embodiment
Property conductive film in side's is Sony product (SONY ACF), light transmittance about 70%.
Embodiment 1: blue chip GaN base LED chip (COT state) test
(1) blue chip GaN base LED chip, 25 μm of the P/N electrode spacing of chip cover chip with anisotropic conductive film,
Chip is placed on blue film by the light transmittance of the anisotropic conductive film about 70%, thickness 1mm, and the spacing between chip is 200 μ
M, as shown in Figure 1；
(2) step (1) described product to be tested is placed into test machine microscope carrier, adds anisotropic conductive film using test machine microscope carrier
Heat, 100 DEG C of temperature, time 8min, as shown in Figure 2；
(3) LED chip for covering anisotropic conductive film is scanned on automatic test machine, test system to be measured is completed image and known
After not, two probes of test machine are pricked into the corresponding anisotropic conductive film region of chip positive and negative electrode, testing needle pressure is adjusted, makes
The dynamics of needle pressure realizes that testing needle, anisotropic conductive film, electrode (pad) well contact, and starts to test；Testing needle setting contact
Pressure, it is a little bigger that right side corresponds to needle force, and dynamics is able to achieve good contact.
(4) anisotropic conductive film is removed after being completed.
Needle trace is not present in chip electrode surface after test, realizes non-destructive testing, as shown in Figure 3.
Embodiment 2:GaN base LED chip (COW state) test,
(1) blue light GaN base LED chip, 30 μm of the P/N electrode spacing of chip cover chip with anisotropic conductive film, this is different
The light transmittance of side's property conductive film about 70%, with a thickness of 2mm, chip is placed on blue film, and the spacing between chip is 15-20 μm；
(2) step (1) described product to be tested is placed into test machine microscope carrier, adds anisotropic conductive film using test machine microscope carrier
Heat, 110 DEG C of temperature, time 9min；
(3) LED chip for covering anisotropic conductive film is scanned on automatic test machine, test system to be measured is completed image and known
After not, two probes of test machine are pricked into the corresponding anisotropic conductive film region of chip positive and negative electrode, testing needle pressure is adjusted, makes
The dynamics of needle pressure realizes that testing needle, anisotropic conductive film, electrode (pad) well contact, and starts to test；Testing needle setting contact
Pressure, it is a little bigger that right side corresponds to needle force, and dynamics is able to achieve good contact.
(4) anisotropic conductive film is removed after being completed.Needle trace is not present in chip electrode surface after test, realizes
Non-destructive testing,
Comparative example: chip is tested using conventional method
Test is same as Example 1 with chip, by existing GaN base LED core chip test method, is surveyed with automatic test machine
Examination, by pricking two probes on positive and negative two electrodes of GaN base LED chip respectively, so that turning circuit is tested, such as
Shown in Fig. 4.Chip electrode appearance after test is as shown in figure 5, there are big and inclined electrode needle traces and more in GaN base LED chip
Needle trace.
Claims (8)
1. a kind of test method for improving GaN base LED chip appearance yield, which is characterized in that electrically lead anisotropic conductive film
Logical Z-direction is placed on chip electrode perpendicular to chip surface, and the feelings aligned with chip electrode are not necessarily in anisotropic conductive film
It realizes that test probe is electrically connected with the non-contact of the chip electrode under condition, carries out LED core built-in testing.
2. a kind of test method for improving GaN base LED chip appearance yield as described in claim 1, which is characterized in that including
Step:
(1) it is located at chip electrode to be measured upward on test machine microscope carrier, is covered on chip top with anisotropic conductive film；
(2) test machine microscope carrier heating temperature is set as 80-200 DEG C, is heated to the anisotropic conductive film, keep temperature 80-
200 DEG C, constant temperature 5-10min；
(3) it is scanned with the LED chip of the apparatus for testing chip covering anisotropic conductive film described to step (2), fills test
Two probes of machine touch the corresponding anisotropic conductive film region of chip positive and negative electrode, and make the anisotropic conductive film and core
Plate electrode contact；Start to test；
(4) remove anisotropic conductive film after being completed.
3. a kind of test method for improving GaN base LED chip appearance yield as described in claim 1, which is characterized in that described
Transmitance > 30% of anisotropic conductive film.
4. a kind of test method for improving GaN base LED chip appearance yield as described in claim 1, which is characterized in that described
Anisotropic conductive film film thickness 0.5-5mm；Preferably, the anisotropic conductive film film thickness 1-2mm.
5. a kind of test method for improving GaN base LED chip appearance yield as described in claim 1, which is characterized in that step
(1) in, the chip to be measured is placed on blue film and is placed on test machine microscope carrier again.
6. a kind of test method for improving GaN base LED chip appearance yield as described in claim 1, which is characterized in that step
(1) in, the P/N electrode spacing of the chip to be measured is no less than 20 μm；It is preferred that the P/N electrode spacing of the chip to be measured is 20-
40μm。
7. a kind of test method for improving GaN base LED chip appearance yield as described in claim 1, which is characterized in that step
(3) testing needle contact pressure is adjusted in, makes to test needle force greater than P electrode is corresponded to corresponding to N electrode test needle force.
8. a kind of test method for improving GaN base LED chip appearance yield as described in claim 1, which is characterized in that be used for
Blue light GaN base LED, green light GaN base LED or ultraviolet light GaN base LED core built-in testing.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711087144.5A CN109755144A (en) | 2017-11-07 | 2017-11-07 | A kind of test method improving GaN base LED chip appearance yield |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711087144.5A CN109755144A (en) | 2017-11-07 | 2017-11-07 | A kind of test method improving GaN base LED chip appearance yield |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112444688A (en) * | 2019-08-29 | 2021-03-05 | 三赢科技（深圳）有限公司 | Detection device and detection method for pressed conductive product |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001052793A (en) * | 1999-08-09 | 2001-02-23 | Ibiden Co Ltd | Continuity inspecting method and conduction inspecting device |
| CN1954393A (en) * | 2004-05-12 | 2007-04-25 | 第一毛织株式会社 | Insulated conductive particles and anisotropic conductive adhesive film containing the particles |
| CN101308711A (en) * | 2008-04-29 | 2008-11-19 | 刘萍 | Multilayer anisotropic conductive film and process for preparing the same |
| CN104678274A (en) * | 2015-03-19 | 2015-06-03 | 山东浪潮华光光电子股份有限公司 | Nondestructive test method of LED chips |
-
2017
- 2017-11-07 CN CN201711087144.5A patent/CN109755144A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001052793A (en) * | 1999-08-09 | 2001-02-23 | Ibiden Co Ltd | Continuity inspecting method and conduction inspecting device |
| CN1954393A (en) * | 2004-05-12 | 2007-04-25 | 第一毛织株式会社 | Insulated conductive particles and anisotropic conductive adhesive film containing the particles |
| CN101308711A (en) * | 2008-04-29 | 2008-11-19 | 刘萍 | Multilayer anisotropic conductive film and process for preparing the same |
| CN104678274A (en) * | 2015-03-19 | 2015-06-03 | 山东浪潮华光光电子股份有限公司 | Nondestructive test method of LED chips |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112444688A (en) * | 2019-08-29 | 2021-03-05 | 三赢科技（深圳）有限公司 | Detection device and detection method for pressed conductive product |
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Application publication date: 20190514 |