CN103389307A - Apparatus for backside EMMI failure analysis and failure analysis method thereof - Google Patents
Apparatus for backside EMMI failure analysis and failure analysis method thereof Download PDFInfo
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- CN103389307A CN103389307A CN2012101451273A CN201210145127A CN103389307A CN 103389307 A CN103389307 A CN 103389307A CN 2012101451273 A CN2012101451273 A CN 2012101451273A CN 201210145127 A CN201210145127 A CN 201210145127A CN 103389307 A CN103389307 A CN 103389307A
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- pvc
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Abstract
The invention discloses an apparatus for the backside EMMI failure analysis. The apparatus comprises a PVC circuit board and a signal input and output pedestal; a transparent synthetic glass sheet is arranged in the center of the PVC circuit board, and a plurality of metal pins are arranged in the periphery of the synthetic glass sheet; circuit board metal pads are arranged at the four corners of the PVC circuit board respectively; each of the metal pins is connected with a jumper wire interface through a metal wire, and the jumper wire interface is connected with the four circuit board metal pads through metal wires respectively; and the signal input and output pedestal comprises a pedestal body, pedestal metal pads are arranged at the four corners of the pedestal body respectively, and the positions of the pedestal metal pads correspond to the positions of the circuit board metal pads. The apparatus allows the backside EMMI failure analysis to simply, rapidly and reliably realize the failure point positioning, and the positioning time of failure defects to be shortened to several hours from original several days. The invention also discloses a method for the backside EMMI failure analysis.
Description
Technical field
The present invention relates to a kind of failure analysis apparatus of semiconductor devices, be specifically related to a kind of device for back side EMMI failure analysis.The invention still further relates to a kind of back side EMMI failure analysis method.
Background technology
For semiconductor failure analysis (FA), infraluminescence microscope (IR Emission Microscope, EMMI) be a kind of defect location analysis tool quite efficiently, the photon that emits in the time of can capturing electron-hole recombinant in semiconductor subassembly, the wavelength that can detect is about 350～1100nm left and right.Therefore EMMI(illuminating microscope) can be widely used in detecting the IC(semiconductor) in the leakage current that produces of various assembly defects, as Gate oxide defects(grid oxygen defect), the Leakage defects(defect of leak electricity), Latch up(grid lock), the inefficacy of ESD failure(static) etc.
Because the most of defect in the IC device all manifests faint luminescence phenomenon at the chip operation state, EMMI, by its highly sensitive detectivity, can navigate to failpoint the definite position on a chip.The slip-stick artist is according to the failpoint of locating in failure analysis (FA), and further process chip, manifest concrete defect mode, finds the root of inefficacy.
But along with the transmission speed of chip and the increase of I/O circuit complexity, metal level is also more and more, the IC up to eight layers of metal level occurred.Because too much metal level can manifest from the luminescent effect of straight tackling electric leakage, so FA slip-stick artist starts to do from the back side EMMI analysis.
As shown in Figure 1 and Figure 2, EMMI failure analysis method in the back side comprises the following steps:
The first step, start to grind semiconductor (IC) device of inefficacy from the back side, until be encapsulated in the substrate of the nude film (die) of chip internal, all expose;
Second step,, by the mode of manual acupuncture treatment, prick to the end of a thread corresponding to the pin that needs signal to input or output (pin) with probe (probe), to realize the conducting of signal.
, due to the limitation in space, cause probe too much, generally just can only not connect 5～6 pins; Simultaneously, the area of probe and metal wire contact point is very little, is again unfixed, 5～6 pins of balance, guarantees that simultaneously good contact is difficult for very much, length consuming time, operating difficulties, poor repeatability.And,, due to the restriction of probe, cause the test function of a plurality of signal controlling of most of needs to be very limited.
In addition, the product after this back side EMMI failure analysis method is only applicable to encapsulate, and need to expend the accurate location that just can complete single defect area several working days, especially in the situation that a plurality of signal inputs of needs.In semiconductor technology develop rapidly at present, device feature size constantly dwindles, and under the background that integrated level constantly rises, this failure analysis method is because the limitation of temporal delay and signal input is not received, thereby brings huge challenge for the analysis of inefficacy defect location and failure mechanism.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of device for back side EMMI failure analysis, it is easy in EMMI failure analysis process, location defect zone quickly and accurately overleaf, effectively improve the failure analysis efficiency of back side EMMI, shorten analysis time.
For solving the problems of the technologies described above, the technical solution that the present invention is used for the device of back side EMMI failure analysis is:
Comprise a PVC circuit board, a signal input and output base that plays fixation; The center of described PVC circuit board is provided with a transparent organic glass sheet, and the surrounding of organic glass sheet is provided with a plurality of metal pins; Four angles of PVC circuit board are respectively arranged with the circuit board metal gasket; Each metal pins connects a wire jumper interface by metal wire respectively, and each wire jumper interface is connected with four circuit board metal gaskets respectively by metal wire, and the wire jumper interface is used for realizing the conducting of metal pins and arbitrary circuit board metal gasket; Described signal input and output base comprises pedestal, and four angles of pedestal are respectively arranged with the base metal gasket, and the position of base metal gasket is corresponding with the position of described circuit board metal gasket; When four circuit board metal gaskets are connected with four base metal gaskets respectively, can realize signal conduction; Four angles of described pedestal are respectively arranged with the spring clinching; The spring clinching is used for realizing being fixedly connected with of PVC circuit board and signal input and output base; Described each base metal gasket is provided with signaling interface, is used for connecting the analyzing parameters of semiconductor instrument.
Metal line between described a plurality of metal pins and four circuit board metal gaskets is divided into two-layer.
Described metal pins is the copper pin; Described circuit board metal gasket is copper lining; Described base metal gasket is copper lining.
The material of described pedestal is organic glass.
The present invention also provides a kind of back side EMMI failure analysis method, and its technical solution is, comprises the following steps:
The first step, be fixed on the nude film that lost efficacy on the organic glass sheet of PVC circuit board;
Second step, be connected to the required pin of test on nude film on metal pins corresponding on the PVC circuit board, thereby the signal of IC be connected on the PVC circuit board;
The described method that the required pin of test on nude film is connected on the PVC circuit board on corresponding metal pins is: the PVC circuit board is placed on bonding equipment, and the mode by bonding wire connects.
The 3rd step, the PVC circuit board is tipped upside down on signal input and output base, four circuit board metal gaskets of PVC circuit board are connected with four base metal gaskets on signal input and output base, buckle four spring clinchings on signal input and output base, to realize the signal conduction between PVC circuit board and signal input and output base;
In the 4th step, connect four signaling interfaces of signal input and output base and four input/output signal passages of analyzing parameters of semiconductor instrument by signal wire, by the setting of analyzing parameters of semiconductor instrument and give four needed voltages of signalling channel;
In the 5th step,, by EMMI locate failure point, carry out the failpoint of back side EMMI and survey.
The technique effect that the present invention can reach is:
The present invention can solve in traditional back side EMMI failure analysis process a plurality of PIN and need to provide simultaneously and respectively organize different signals and come test I C electrical parameter and the functional module realization property that lost efficacy not high, and analytic process length consuming time, difficulty are high, the problem of poor repeatability, make back side EMMI failure analysis navigate to more simply, fast and reliably failpoint, only need the cost time of several hours just can complete the location of the inefficacy defect that original needs just can complete several working days.Simultaneously, as need, analyze again, utilize the present invention, after the inefficacy sample is lifted down, installation testing is equally very simple again, and repeatability is high.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments:
Fig. 1 is the schematic diagram of prior art back side EMMI failure analysis method;
Fig. 2 is the sectional view of Fig. 1;
Fig. 3 is the floor map of the PVC circuit board of the present invention's device of being used for back side EMMI failure analysis;
Fig. 4 is the diagrammatic cross-section of signal input and output base of the present invention;
Fig. 5 is use view of the present invention.
Description of reference numerals in figure:
1,2,3,4 is probe,
11 is the organic glass sheet, and 12 is metal pins,
13 is the wire jumper interface, and 14 is the circuit board metal gasket,
21 is pedestal, and 22 is the base metal gasket,
23 is the spring clinching, and 10 is the PVC circuit board,
20 is signal input and output bases, and 30 is nude film.
Embodiment
The present invention is used for the device of back side EMMI failure analysis, comprises a PVC(Polyvinyl chloride resin Polyvinylchloride) circuit board, a signal input and output base that plays fixation; Signal input and output base can Continuity signal;
As shown in Figure 3, the center of PVC circuit board is provided with a transparent organic glass sheet 11; Organic glass sheet 11 is used for the location nude film, can not stop that EMMI catches infrared spectrum simultaneously;
In the front of PVC circuit board, the surrounding of organic glass sheet 11 is provided with a plurality of metal pins 12; Four, every limit is totally ten six metal pins 12; Each metal pins 12 can connect the pin of six roots of sensation nude film at least;
Four angles of PVC circuit board are respectively arranged with circuit board metal gasket (pad) 14;
Each metal pins 12 connects a wire jumper interface 13 by metal wire respectively, and each wire jumper interface 13 is connected with four circuit board metal gaskets 14 respectively by metal wire; Wire jumper interface 13 is used for realizing the conducting of metal pins 12 and arbitrary circuit board metal gasket 14;
Metal line between 16 metal pins 12 and four circuit board metal gaskets 14 is divided into two-layer;
The PVC circuit board can be applicable to any product of any encapsulation mode.
As shown in Figure 4, signal input and output base comprises organic glass pedestal 21, and four angles of pedestal 21 are respectively arranged with base metal gasket (pad) 22, and the position of base metal gasket 22 is corresponding with the position of circuit board metal gasket 14; When four circuit board metal gaskets 14 are connected with four base metal gaskets (pad) 22 respectively, can realize signal conduction;
Four angles of pedestal 21 are respectively arranged with spring clinching 23; Spring clinching 23 is used for realizing being fixedly connected with of PVC circuit board and signal input and output base;
Each base metal gasket 22 is provided with signaling interface (being the power supply input/output port), is used for connecting analyzing parameters of semiconductor instrument (SPA, Semiconductor Parameter Analyzer);
As shown in Figure 5, using method of the present invention is as follows:
The first step, be bonded at nude film (die) the 30 use rosin that lost efficacy on the organic glass sheet 11 of PVC circuit board 10;
Second step, PVC circuit board 10 is placed on the board of bonding equipment (ball bonder), mode by bonding wire (Wire bonding), the pin that test on nude film 30 is required (pin that provides signal to support namely is provided) is connected on metal pins 12 corresponding on PVC circuit board 10, thereby the signal of IC is connected on PVC circuit board 10;
The 3rd step, PVC circuit board 10 is tipped upside down on (being face down) on signal input and output base 20, four circuit board metal gaskets 14 of PVC circuit board 10 are connected with four the base metal gaskets (pad) 22 on signal input and output base 20, buckle four spring clinchings 23 on signal input and output base 20, to realize the abundant conducting of signal between PVC circuit board 10 and signal input and output base 20;
The 4th step, connect four signaling interfaces (being the power supply input/output port) of signal input and output base 20 and four input/output signal passages (channel) of analyzing parameters of semiconductor instrument (SPA) by signal wire, by the setting of analyzing parameters of semiconductor instrument and give four needed voltages of signalling channel; The effect of analyzing parameters of semiconductor instrument is to provide power resources, and carries out the IC testing electrical property;
In the 5th step,, by EMMI locate failure point, carry out the failpoint of back side EMMI and survey.
The present invention is by wire jumper interface connection metal pin and circuit board metal gasket, makes 16 metal pins and four signalling channels can combination in any.
The present invention in detection process, only need to simply arrange connection and the input of four signalling channels, and is easy to operate, fast, be difficult for makeing mistakes, consuming time few, in analytic process, as long as buckling simply the spring clinching just can realize signal conduction, after lifting down, installation testing is equally very simple again, and repeatability is high.
The present invention is applicable to package level(and adopts the product of any encapsulation mode to be suitable for, and comprises BGA(Ball Grid Array), TSOP (Thin Small Outline Package) etc.) and wafer level(chip-scale) any product.
Claims (6)
1. a device that is used for back side EMMI failure analysis, is characterized in that: comprise a PVC circuit board, a signal input and output base that plays fixation;
The center of described PVC circuit board is provided with a transparent organic glass sheet, and the surrounding of organic glass sheet is provided with a plurality of metal pins; Four angles of PVC circuit board are respectively arranged with the circuit board metal gasket; Each metal pins connects a wire jumper interface by metal wire respectively, and each wire jumper interface is connected with four circuit board metal gaskets respectively by metal wire, and the wire jumper interface is used for realizing the conducting of metal pins and arbitrary circuit board metal gasket;
Described signal input and output base comprises pedestal, and four angles of pedestal are respectively arranged with the base metal gasket, and the position of base metal gasket is corresponding with the position of described circuit board metal gasket; When four circuit board metal gaskets are connected with four base metal gaskets respectively, can realize signal conduction;
Four angles of described pedestal are respectively arranged with the spring clinching; The spring clinching is used for realizing being fixedly connected with of PVC circuit board and signal input and output base;
Described each base metal gasket is provided with signaling interface, is used for connecting the analyzing parameters of semiconductor instrument.
2. the device for back side EMMI failure analysis according to claim 1 is characterized in that: the metal line between described a plurality of metal pins and four circuit board metal gaskets is divided into two-layer.
3. the device for back side EMMI failure analysis according to claim 1, it is characterized in that: described metal pins is the copper pin; Described circuit board metal gasket is copper lining; Described base metal gasket is copper lining.
4. the device for back side EMMI failure analysis according to claim 1, it is characterized in that: the material of described pedestal is organic glass.
5. a back side EMMI failure analysis method, is characterized in that, adopts device claimed in claim 1, comprises the following steps:
The first step, be fixed on the nude film that lost efficacy on the organic glass sheet of PVC circuit board;
Second step, be connected to the required pin of test on nude film on metal pins corresponding on the PVC circuit board, thereby the signal of IC be connected on the PVC circuit board;
The 3rd step, the PVC circuit board is tipped upside down on signal input and output base, four circuit board metal gaskets of PVC circuit board are connected with four base metal gaskets on signal input and output base, buckle four spring clinchings on signal input and output base, to realize the signal conduction between PVC circuit board and signal input and output base;
In the 4th step, connect four signaling interfaces of signal input and output base and four input/output signal passages of analyzing parameters of semiconductor instrument by signal wire, by the setting of analyzing parameters of semiconductor instrument and give four needed voltages of signalling channel;
In the 5th step,, by EMMI locate failure point, carry out the failpoint of back side EMMI and survey.
6. the back side according to claim 5 EMMI failure analysis method, it is characterized in that: the method that in described second step, the required pin of test on nude film is connected on the PVC circuit board on corresponding metal pins is: the PVC circuit board is placed on bonding equipment, and the mode by bonding wire connects.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012101451273A CN103389307A (en) | 2012-05-11 | 2012-05-11 | Apparatus for backside EMMI failure analysis and failure analysis method thereof |
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| CN2012101451273A CN103389307A (en) | 2012-05-11 | 2012-05-11 | Apparatus for backside EMMI failure analysis and failure analysis method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109633418A (en) * | 2018-12-29 | 2019-04-16 | 上海华力集成电路制造有限公司 | Photon radiation microscope example seat, test method and microscopie unit |
| CN114280451A (en) * | 2021-12-20 | 2022-04-05 | 上海季丰电子股份有限公司 | Sample preparation method and sample preparation equipment for chip failure analysis |
| US11862266B2 (en) | 2021-03-25 | 2024-01-02 | Changxin Memory Technologies, Inc. | Chip detection method and chip detection apparatus |
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| US6127833A (en) * | 1999-01-04 | 2000-10-03 | Taiwan Semiconductor Manufacturing Co. | Test carrier for attaching a semiconductor device |
| CN1635364A (en) * | 2003-12-30 | 2005-07-06 | 中芯国际集成电路制造(上海)有限公司 | Chip fixing device for finding chip defect by luminous microscope |
| CN101086553A (en) * | 2006-06-08 | 2007-12-12 | 中芯国际集成电路制造(上海)有限公司 | Light emission microscope opposite side sample fixer |
| CN102074543A (en) * | 2009-11-20 | 2011-05-25 | 中芯国际集成电路制造(上海)有限公司 | Packaging pedestal for semiconductor |
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2012
- 2012-05-11 CN CN2012101451273A patent/CN103389307A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6127833A (en) * | 1999-01-04 | 2000-10-03 | Taiwan Semiconductor Manufacturing Co. | Test carrier for attaching a semiconductor device |
| CN1635364A (en) * | 2003-12-30 | 2005-07-06 | 中芯国际集成电路制造(上海)有限公司 | Chip fixing device for finding chip defect by luminous microscope |
| CN101086553A (en) * | 2006-06-08 | 2007-12-12 | 中芯国际集成电路制造(上海)有限公司 | Light emission microscope opposite side sample fixer |
| CN102074543A (en) * | 2009-11-20 | 2011-05-25 | 中芯国际集成电路制造(上海)有限公司 | Packaging pedestal for semiconductor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109633418A (en) * | 2018-12-29 | 2019-04-16 | 上海华力集成电路制造有限公司 | Photon radiation microscope example seat, test method and microscopie unit |
| US11862266B2 (en) | 2021-03-25 | 2024-01-02 | Changxin Memory Technologies, Inc. | Chip detection method and chip detection apparatus |
| CN114280451A (en) * | 2021-12-20 | 2022-04-05 | 上海季丰电子股份有限公司 | Sample preparation method and sample preparation equipment for chip failure analysis |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140114 |
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Effective date of registration: 20140114 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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Application publication date: 20131113 |