CN104674350B - 一种多铁性甲酸盐类LiCo(COOH)3单晶材料及其制备方法 - Google Patents
一种多铁性甲酸盐类LiCo(COOH)3单晶材料及其制备方法 Download PDFInfo
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- CN104674350B CN104674350B CN201510102060.9A CN201510102060A CN104674350B CN 104674350 B CN104674350 B CN 104674350B CN 201510102060 A CN201510102060 A CN 201510102060A CN 104674350 B CN104674350 B CN 104674350B
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- 229910013733 LiCo Inorganic materials 0.000 title claims abstract description 45
- 125000000896 monocarboxylic acid group Chemical group 0.000 title claims abstract description 44
- 239000000463 material Substances 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 title claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 27
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 48
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 22
- XKPJKVVZOOEMPK-UHFFFAOYSA-M lithium;formate Chemical compound [Li+].[O-]C=O XKPJKVVZOOEMPK-UHFFFAOYSA-M 0.000 claims description 17
- 239000012153 distilled water Substances 0.000 claims description 16
- PFQLIVQUKOIJJD-UHFFFAOYSA-L cobalt(ii) formate Chemical compound [Co+2].[O-]C=O.[O-]C=O PFQLIVQUKOIJJD-UHFFFAOYSA-L 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 8
- 239000011259 mixed solution Substances 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000005416 organic matter Substances 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 238000001291 vacuum drying Methods 0.000 claims description 3
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims 1
- 229940125717 barbiturate Drugs 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 235000019253 formic acid Nutrition 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 238000010025 steaming Methods 0.000 claims 1
- 239000000047 product Substances 0.000 abstract description 16
- 238000001027 hydrothermal synthesis Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 7
- 239000007791 liquid phase Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- 239000003795 chemical substances by application Substances 0.000 abstract description 2
- 239000013065 commercial product Substances 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000003860 storage Methods 0.000 abstract description 2
- COHAIAIOWLZHFV-UHFFFAOYSA-K [Co+2].[Li+].C(=O)[O-].C(=O)[O-].C(=O)[O-] Chemical compound [Co+2].[Li+].C(=O)[O-].C(=O)[O-].C(=O)[O-] COHAIAIOWLZHFV-UHFFFAOYSA-K 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- -1 cobaltous formates Chemical class 0.000 description 6
- 239000012621 metal-organic framework Substances 0.000 description 5
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005621 ferroelectricity Effects 0.000 description 2
- 239000007775 ferroic material Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- IGRCWJPBLWGNPX-UHFFFAOYSA-N 3-(2-chlorophenyl)-n-(4-chlorophenyl)-n,5-dimethyl-1,2-oxazole-4-carboxamide Chemical compound C=1C=C(Cl)C=CC=1N(C)C(=O)C1=C(C)ON=C1C1=CC=CC=C1Cl IGRCWJPBLWGNPX-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004675 formic acid derivatives Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910001428 transition metal ion Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/54—Organic compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Liquid Crystal Substances (AREA)
Abstract
Description
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CN201510102060.9A CN104674350B (zh) | 2015-03-09 | 2015-03-09 | 一种多铁性甲酸盐类LiCo(COOH)3单晶材料及其制备方法 |
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CN201510102060.9A CN104674350B (zh) | 2015-03-09 | 2015-03-09 | 一种多铁性甲酸盐类LiCo(COOH)3单晶材料及其制备方法 |
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CN104674350A CN104674350A (zh) | 2015-06-03 |
CN104674350B true CN104674350B (zh) | 2017-12-12 |
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CN105926040B (zh) * | 2016-06-24 | 2019-01-04 | 哈尔滨工业大学 | 一种以二异丙胺卤盐为前体材料的有机-无机杂化钙钛矿结构晶体的制备方法 |
CN113235165B (zh) * | 2021-04-26 | 2022-10-14 | 上海大学 | 一种Fe1-xTMxS单晶材料的制备方法 |
Family Cites Families (2)
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DE4123062A1 (de) * | 1991-07-12 | 1993-01-14 | Degussa | Verfahren zur herstellung von calciumformiat |
DE19929346A1 (de) * | 1999-06-26 | 2000-12-28 | Bayer Ag | Staubfreies Calciumformiat |
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2015
- 2015-03-09 CN CN201510102060.9A patent/CN104674350B/zh active Active
Non-Patent Citations (2)
Title |
---|
Irreversible transformation of chiral to achiral polymorph of K[Co(HCOO)3]:synthesis,structures, and magnetic properties;Zhiming Duan, et al.;《Dalton Trans.》;20110317;第40卷;第4465-4473页 * |
Perovskite-like Metal Formates with Weak Ferromagnetism and as Precursors to Amorphous Materials;Xin-Yi Wang, et al.;《Inorg. Chem.》;20040626;第43卷(第15期);第4615-4625页 * |
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Effective date of registration: 20181129 Address after: 233010 Pioneering Building 316, Huineng Small and Micro Enterprises Pioneering Center, 1750 Shengli West Road, Yuhui District, Bengbu City, Anhui Province Patentee after: BENGBU DINGRONG TECHNOLOGY INFORMATION CONSULTING Co.,Ltd. Address before: 322204 No. 69, Yongjin Village, Huangzhai Town, Pujiang County, Zhejiang Province Patentee before: Wang Junliu |
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Effective date of registration: 20190606 Address after: 311200 Zidong Village, Heshang Town, Xiaoshan District, Hangzhou City, Zhejiang Province Patentee after: Hangzhou Xiaohe New Materials Technology Co.,Ltd. Address before: 233010 Pioneering Building 316, Huineng Small and Micro Enterprises Pioneering Center, 1750 Shengli West Road, Yuhui District, Bengbu City, Anhui Province Patentee before: BENGBU DINGRONG TECHNOLOGY INFORMATION CONSULTING Co.,Ltd. |
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Effective date of registration: 20240503 Address after: Room 3342, Building 7, No. 1197, Bin'an Road, Changhe Street, Binjiang District, Hangzhou, Zhejiang 310000, China (Zhejiang) Pilot Free Trade Zone Patentee after: Hangzhou Chuangming Zhicai Intelligent Technology Co.,Ltd. Country or region after: China Address before: 311200 he Shang Zhen Zi Dong Cun, Xiaoshan District, Hangzhou City, Zhejiang Province Patentee before: Hangzhou Xiaohe New Materials Technology Co.,Ltd. Country or region before: China |