CN104641463B - 改良的边缘环的周缘 - Google Patents

改良的边缘环的周缘 Download PDF

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Publication number
CN104641463B
CN104641463B CN201380047547.0A CN201380047547A CN104641463B CN 104641463 B CN104641463 B CN 104641463B CN 201380047547 A CN201380047547 A CN 201380047547A CN 104641463 B CN104641463 B CN 104641463B
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Prior art keywords
substrate
edge
perimeter
ring
support
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Chinese (zh)
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CN104641463A (zh
Inventor
约瑟夫·M·拉内什
沃尔夫冈·R·阿德霍尔德
布莱克·克尔米
伊利亚·拉维特斯凯
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201380047547.0A 2012-09-28 2013-08-15 改良的边缘环的周缘 Active CN104641463B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/630,291 2012-09-28
US13/630,291 US8865602B2 (en) 2012-09-28 2012-09-28 Edge ring lip
PCT/US2013/055167 WO2014051874A1 (en) 2012-09-28 2013-08-15 Improved edge ring lip

Publications (2)

Publication Number Publication Date
CN104641463A CN104641463A (zh) 2015-05-20
CN104641463B true CN104641463B (zh) 2018-05-08

Family

ID=50385609

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380047547.0A Active CN104641463B (zh) 2012-09-28 2013-08-15 改良的边缘环的周缘

Country Status (6)

Country Link
US (1) US8865602B2 (enExample)
JP (1) JP6258334B2 (enExample)
KR (1) KR102167554B1 (enExample)
CN (1) CN104641463B (enExample)
TW (1) TWI512884B (enExample)
WO (1) WO2014051874A1 (enExample)

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US8744250B2 (en) * 2011-02-23 2014-06-03 Applied Materials, Inc. Edge ring for a thermal processing chamber
JP2016501445A (ja) * 2012-11-21 2016-01-18 イー・ヴィー グループ インコーポレイテッドＥＶ Ｇｒｏｕｐ Ｉｎｃ． ウェハの収容および載置用の収容具
US9768052B2 (en) * 2013-03-14 2017-09-19 Applied Materials, Inc. Minimal contact edge ring for rapid thermal processing
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
TWI776859B (zh) * 2017-03-06 2022-09-11 美商應用材料股份有限公司 旋轉器蓋
KR102538177B1 (ko) 2017-11-16 2023-05-31 삼성전자주식회사 상부 샤워 헤드 및 하부 샤워 헤드를 포함하는 증착 장치
KR102404061B1 (ko) 2017-11-16 2022-05-31 삼성전자주식회사 상부 샤워 헤드 및 하부 샤워 헤드를 포함하는 증착 장치
CN118380375A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
CN111819679A (zh) * 2018-03-13 2020-10-23 应用材料公司 具有等离子体喷涂涂层的支撑环
DE112019001415B4 (de) * 2018-03-20 2025-07-24 Beijing E-Town Semiconductor Technology, Co., Ltd. Trägerplatte für eine lokale Erwärmung in thermischen Verarbeitungssystemen
KR102295249B1 (ko) * 2019-10-08 2021-08-30 (주)에스티아이 기판처리장치
US11764101B2 (en) * 2019-10-24 2023-09-19 ASM IP Holding, B.V. Susceptor for semiconductor substrate processing
KR20220010074A (ko) 2020-02-11 2022-01-25 램 리써치 코포레이션 웨이퍼 베벨/에지 상의 증착을 제어하기 위한 캐리어 링 설계들
JP7466686B2 (ja) 2020-03-23 2024-04-12 ラム リサーチ コーポレーション 基板処理システムにおける中間リング腐食補償
JP7461214B2 (ja) * 2020-05-19 2024-04-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
WO2021262583A1 (en) * 2020-06-25 2021-12-30 Lam Research Corporation Carrier rings with radially-varied plasma impedance
US12046503B2 (en) * 2021-10-26 2024-07-23 Applied Materials, Inc. Chuck for processing semiconductor workpieces at high temperatures
US20240128077A1 (en) * 2022-10-14 2024-04-18 Nanya Technology Corporation Semiconductor device and a method for film deposition
US20250142678A1 (en) * 2023-08-01 2025-05-01 Animal Lamps, LLC Heat lamp
CN117604478A (zh) * 2023-11-13 2024-02-27 中国科学院上海光学精密机械研究所 一种大口径光学薄膜元件镀膜夹具

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Patent Citations (2)

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US5474612A (en) * 1990-03-19 1995-12-12 Kabushiki Kaisha Toshiba Vapor-phase deposition apparatus and vapor-phase deposition method
CN1922457A (zh) * 2004-02-27 2007-02-28 应用材料股份有限公司 对构图的晶片背面进行快速热退火处理的方法

Also Published As

Publication number Publication date
CN104641463A (zh) 2015-05-20
KR20150058520A (ko) 2015-05-28
JP2015536048A (ja) 2015-12-17
TW201413866A (zh) 2014-04-01
KR102167554B1 (ko) 2020-10-19
US20140094039A1 (en) 2014-04-03
TWI512884B (zh) 2015-12-11
US8865602B2 (en) 2014-10-21
JP6258334B2 (ja) 2018-01-10
WO2014051874A1 (en) 2014-04-03

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