CN104637962A - 图像传感器及其制造方法 - Google Patents
图像传感器及其制造方法 Download PDFInfo
- Publication number
- CN104637962A CN104637962A CN201410599391.3A CN201410599391A CN104637962A CN 104637962 A CN104637962 A CN 104637962A CN 201410599391 A CN201410599391 A CN 201410599391A CN 104637962 A CN104637962 A CN 104637962A
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- Prior art keywords
- photo
- electric conversion
- conversion element
- layer
- amorphous silicon
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- 238000004519 manufacturing process Methods 0.000 title abstract description 44
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 124
- 239000004065 semiconductor Substances 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 239000001257 hydrogen Substances 0.000 claims abstract description 29
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 29
- 238000006243 chemical reaction Methods 0.000 claims description 154
- 230000004888 barrier function Effects 0.000 claims description 65
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 39
- 239000011248 coating agent Substances 0.000 claims description 34
- 238000000576 coating method Methods 0.000 claims description 34
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 34
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 27
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 18
- 238000010276 construction Methods 0.000 claims description 16
- 239000011159 matrix material Substances 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 abstract 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 73
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 230000005669 field effect Effects 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 238000001514 detection method Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000002601 radiography Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 229910007541 Zn O Inorganic materials 0.000 description 1
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013231151A JP6384822B2 (ja) | 2013-11-07 | 2013-11-07 | イメージセンサ及びその製造方法 |
JP2013-231151 | 2013-11-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104637962A true CN104637962A (zh) | 2015-05-20 |
CN104637962B CN104637962B (zh) | 2018-11-09 |
Family
ID=53006368
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410599391.3A Active CN104637962B (zh) | 2013-11-07 | 2014-10-30 | 图像传感器及其制造方法 |
Country Status (3)
Country | Link |
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US (2) | US9401382B2 (zh) |
JP (1) | JP6384822B2 (zh) |
CN (1) | CN104637962B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107910342A (zh) * | 2017-09-04 | 2018-04-13 | 友达光电股份有限公司 | 光感测装置 |
CN108807433A (zh) * | 2017-04-28 | 2018-11-13 | 天马日本株式会社 | 图像传感器及传感器装置 |
CN109585594A (zh) * | 2017-09-29 | 2019-04-05 | 乐金显示有限公司 | 光电检测设备及其制造方法 |
WO2019196840A1 (zh) * | 2018-04-12 | 2019-10-17 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示面板和显示装置 |
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US9806123B2 (en) | 2017-10-31 |
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US9401382B2 (en) | 2016-07-26 |
US20160293659A1 (en) | 2016-10-06 |
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