CN104637782B - A kind of production method of semiconductor devices - Google Patents
A kind of production method of semiconductor devices Download PDFInfo
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- CN104637782B CN104637782B CN201310567441.5A CN201310567441A CN104637782B CN 104637782 B CN104637782 B CN 104637782B CN 201310567441 A CN201310567441 A CN 201310567441A CN 104637782 B CN104637782 B CN 104637782B
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- Prior art keywords
- semiconductor devices
- wafer
- production method
- heat treatment
- oxygen
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 29
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 25
- 239000001301 oxygen Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 15
- 238000005516 engineering process Methods 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 238000005468 ion implantation Methods 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims 1
- -1 phosphonium ion Chemical class 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 16
- 238000009792 diffusion process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
Abstract
The invention discloses a kind of production methods of semiconductor devices, including：A wafer is provided, the silicon of the wafer at least subregion is exposed；Ion implantation technology is executed to the wafer；And heat treatment process is carried out to the wafer, the gas that the heat treatment process uses includes nitrogen and oxygen.Oxygen is added in the present invention during heat treatment, and the oxygen being passed through can form layer of oxide layer in crystal column surface, to fundamentally contain the generation of scaling defects.
Description
Technical field
The present invention relates to IC manufacturing field, more particularly to a kind of production method of semiconductor devices.
Background technology
With being constantly progressive for ic manufacturing technology, the integrated level of semiconductor devices is higher and higher, the line width of grid
Smaller and smaller, the length of the conducting channel below grid also constantly reduces, it is desirable that source electrode and drain electrode shoals accordingly.Current
Technological level requires the depth of the source electrode and drain electrode knot of semiconductor devices to be less than 1000 angstroms, and may finally require the depth of knot
In 200 angstroms or the smaller order of magnitude, current sources and drain electrode nearly all to be formed with ion implantation technology to be doped.
Therefore, such as how the technology of millimicron manufactures metal-oxide-semiconductor（MOS）The source electrode and drain electrode of transistor is mesh
The developing direction of the preceding and following ion implantation technique.In semiconductor fabrication process, the processing procedure of heat treatment is indispensable.Wafer exists
Be heat-treated after ion implanting, the ion of injection can be made to be spread from surface to inside wafer, to formed ideal P or
N well regions.That is, the ion that heat treatment process can be injected with activating ion injection technology, makes the ion being previously injected diffusion more
Uniformly, and the lattice structure damage being injected into caused by the energetic ion in semiconductor substrate is repaired.
Currently, usually using pure nitrogen gas（N2）Gas as heat treatment.But during heat treatment, on wafer if any
The exposed region in pure silicon interface such as zero layer marks（zero mark）, it is susceptible to scaling defects（peeling defect）.It passes
Solution of uniting is that wafer swab is put into after wafer is heat-treated（wafer scrubber）Middle cleaning, with
Scaling defects are washed away, but on the one hand the method has aggravated the pressure of wafer swab production capacity, on the other hand cleaned to it
Scaling defects can not be removed completely, and remaining scaling defects can equally impact the yield of product.
Invention content
The present invention provides a kind of production method of semiconductor devices, to be shelled after solution in the prior art heat treatment process
The problem of falling defect.
In order to solve the above technical problems, the present invention provides a kind of production method of semiconductor devices, including：
A wafer is provided, the silicon in the wafer segment region is exposed；
Ion implantation technology is executed to the wafer；And
Heat treatment process is carried out to the wafer, the gas that the heat treatment process uses includes nitrogen and oxygen.
Optionally, in the production method of the semiconductor devices, the flow of the oxygen is 0.1L/min~0.5L/
min。
Optionally, in the production method of the semiconductor devices, the flow of the nitrogen is 8~12L/min.
Optionally, in the production method of the semiconductor devices, the heat treatment temperature is 1000~1150 degree, institute
It is 40~75 minutes to state heat treatment time.
Optionally, in the production method of the semiconductor devices, the impurity of the ion implantation technology injection is phosphorus
Ion.
Optionally, zero layer label is formed in the production method of the semiconductor devices, on the wafer.
Optionally, in the production method of the semiconductor devices, the zero layer label is formed using following steps：
Initial oxide layer is formed on silicon substrate；And the silicon substrate of the etching initial oxide layer and segment thickness, to form zero layer
Label.
Optionally, in the production method of the semiconductor devices, the initial oxygen is etched using dry etch process
Change the silicon substrate of layer and segment thickness.
Compared with prior art, oxygen is added in the present invention during heat treatment, and the oxygen being passed through can be in crystal column surface shape
At layer of oxide layer, effectively silicon is avoided directly to be contacted with nitrogen, to fundamentally contain the generation of scaling defects.
Description of the drawings
Fig. 1 is the flow diagram of the production method of the semiconductor devices of one embodiment of the invention.
Specific implementation mode
In the background technology it has been already mentioned that during heat treatment, if any the region example that pure silicon interface is exposed on wafer
As scaling defects easily occurs in zero layer mark zone（peeling defect）.Study for a long period of time discovery through present inventor, institute
It is because exposed silicon face easily reacts to form silicon nitride with nitrogen at high temperature, due to nitrogen to there is this phenomenon
SiClx is relatively crisp to cause stress to peel off, and scaling defects occurs.For this purpose, oxygen is added in the present invention during heat treatment
Gas, the oxygen being passed through can form layer of oxide layer in crystal column surface, effectively silicon be avoided directly to be contacted with nitrogen, contain that peeling lacks
Sunken generation.
The present invention is described in more detail below in conjunction with diagrammatic cross-section, which show the preferred realities of the present invention
Apply example, it should be appreciated that those skilled in the art can change invention described herein, and still realize the advantageous effect of the present invention
Fruit.Therefore, following description should be understood as the widely known of those skilled in the art, and be not intended as to the present invention's
Limitation.
For clarity, not describing whole features of practical embodiments.In the following description, it is not described in detail well known function
And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments
In hair, it is necessary to make a large amount of implementation details to realize the specific objective of developer, such as according to related system or related business
Limitation, another embodiment is changed by one embodiment.Additionally, it should think that this development may be complicated and expend
Time, but it is only to those skilled in the art routine work.
The present invention is more specifically described by way of example with reference to attached drawing in the following passage.It is wanted according to following explanation and right
Ask book, advantages and features of the invention that will become apparent from.It should be noted that attached drawing is all made of very simplified form and uses non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
As shown in Figure 1, the production method of the semiconductor devices of the embodiment of the present invention, including：
Step S100：A wafer is provided, the silicon of the wafer at least subregion is exposed；
Step S200：Ion implantation technology is executed to the wafer；
Step S300：Heat treatment process carried out to the wafer, the gas that the heat treatment process uses include nitrogen and
Oxygen.
Zero layer label is formd on the wafer, the zero layer label can be formed using following steps：First in silicon substrate
Then upper formation initial oxide layer utilizes dry etch process to etch the initial oxide layer（start oxide）It is thick with part
The silicon substrate of degree, to form zero layer label, alignment of the zero layer label for post-exposure technique.The initial oxide layer
Presence splashed on its surface outside silicon when can guarantee etching silicon, prevent outer other regions that splash from forming device performance, subsequent technique
In can remove the initial oxide layer.
The impurity of the ion implantation technology injection is phosphorus（P）Ion executes heat treatment process after executing ion implanting, with
So that the ion of injection is spread from crystal column surface to inside wafer, to form ideal N well regions, device can be made by forming N well regions
The leakage current effect of part is preferable.
The present embodiment executes in heat treatment process, is also additionally passed through oxygen in addition to being passed through nitrogen, the oxygen can with it is exposed
Silicon out occurs hair and answers, to form layer of oxide layer, institute's shape after effectively silicon being avoided directly to be contacted with nitrogen in crystal column surface
At big stress, to fundamentally contain the generations of scaling defects.Specifically, the gas that the heat treatment process is passed through
Including nitrogen（N2）And oxygen（O2）, the flow of the oxygen is 0.2~0.5L/min（Liter/min）, the flow of the nitrogen is
The temperature of 8~12L/min, the heat treatment are 1000~1150 degree, and the time of the heat treatment is 40~75 minutes.
The experimental results showed that when being passed into 0.2L/min oxygen, crystal column surface is without scaling defects.And such as table
Shown in 1, compared with not being passed through oxygen, 0.2L/min oxygen, 0.3L/min oxygen, 0.5L/ are each led into heat treatment process
After min oxygen, diffusion of the ion in wafer is not interfered with substantially, while can avoid scaling defects occur again, it can be in not shadow
The problem of ringing the scaling defects in the case of any board production capacity and output capacity, being effectively improved on line caused by heat treatment.
Table one
In conclusion oxygen is added in the present invention during heat treatment, the oxygen being passed through can form one layer in crystal column surface
Oxide layer effectively avoids silicon from directly being contacted with nitrogen, to fundamentally contain the generation of scaling defects, and does not interfere with
The diffusion of ion.
Obviously, those skilled in the art can carry out invention spirit of the various modification and variations without departing from the present invention
And range.If in this way, these modifications and changes of the present invention belong to the claims in the present invention and its equivalent technologies range it
Interior, then the present invention is also intended to including these modification and variations.
Claims (8)
1. a kind of production method of semiconductor devices, including：
One wafer is provided, zero layer label is formed on the wafer, the silicon of the wafer at least subregion is exposed；
Ion implantation technology is executed to the wafer；And
Heat treatment process is carried out to the wafer, the gas that the heat treatment process uses includes nitrogen and oxygen, the oxygen
Flow be 0.1L/min~0.5L/min, to crystal column surface formed an oxide layer.
2. the production method of semiconductor devices as described in claim 1, which is characterized in that the flow of the oxygen is 0.2L/
Min~0.3L/min.
3. the production method of semiconductor devices as described in claim 1, which is characterized in that the flow of the nitrogen is 8~
12L/min。
4. the production method of semiconductor devices as claimed in claim 2, which is characterized in that the heat treatment temperature is 1000~
1150 degrees Celsius.
5. the production method of semiconductor devices as claimed in claim 3, which is characterized in that the heat treatment time is 40~75
Minute.
6. the production method of the semiconductor devices as described in any one of claim 1 to 5, which is characterized in that the ion
The impurity of injection technology injection is phosphonium ion.
7. the production method of semiconductor devices as described in claim 1, which is characterized in that the zero layer label utilizes following step
It is rapid to be formed：
Initial oxide layer is formed on a silicon substrate；And
The silicon substrate for etching the initial oxide layer and segment thickness, to form zero layer label.
8. the production method of semiconductor devices as claimed in claim 7, which is characterized in that etch institute using dry etch process
State the silicon substrate of initial oxide layer and segment thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310567441.5A CN104637782B (en) | 2013-11-14 | 2013-11-14 | A kind of production method of semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310567441.5A CN104637782B (en) | 2013-11-14 | 2013-11-14 | A kind of production method of semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104637782A CN104637782A (en) | 2015-05-20 |
| CN104637782B true CN104637782B (en) | 2018-08-14 |
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| CN201310567441.5A Active CN104637782B (en) | 2013-11-14 | 2013-11-14 | A kind of production method of semiconductor devices |
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| Country | Link |
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Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970003671A (en) * | 1995-06-24 | 1997-01-28 | 김주용 | Silicon Wafer Processing Method |
| CN1279607C (en) * | 2002-04-01 | 2006-10-11 | 旺宏电子股份有限公司 | Method for forming pad oxide layer of semiconductor integrated circuit |
| KR100474538B1 (en) * | 2002-07-15 | 2005-03-10 | 주식회사 하이닉스반도체 | Method for fabricating capacitor of semiconductor device |
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2013
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| Publication number | Publication date |
|---|---|
| CN104637782A (en) | 2015-05-20 |
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