CN104597544A - 4700 nm long-wave pass infrared filtering sensitive element - Google Patents
4700 nm long-wave pass infrared filtering sensitive element Download PDFInfo
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- CN104597544A CN104597544A CN201410733883.7A CN201410733883A CN104597544A CN 104597544 A CN104597544 A CN 104597544A CN 201410733883 A CN201410733883 A CN 201410733883A CN 104597544 A CN104597544 A CN 104597544A
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- 238000001914 filtration Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000002994 raw material Substances 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 abstract description 2
- 239000007888 film coating Substances 0.000 abstract 4
- 238000009501 film coating Methods 0.000 abstract 4
- 239000010410 layer Substances 0.000 abstract 4
- 238000009529 body temperature measurement Methods 0.000 abstract 1
- 238000001931 thermography Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a 4700 nm long-wave pass infrared filtering sensitive element. The 4700 nm long-wave pass infrared filtering sensitive element comprises a substrate taking Si as raw material, a first film coating layer made of Ge and SiO and a second film coating layer made of Ge and SiO; the substrate is arranged between the first film coating layer and the second film coating layer. The 4700 nm long-wave pass infrared filtering sensitive element can largely improve the signal-to-noise ratio and improve the testing accuracy during the temperature measurement process, and is applicable to popularize and use on a large scale. The 5% Cut on of the filtering sensitive element is equal to 4700 nm, 6700-13500 nm; Tavg is not less than 70%, 1500-4200 nm; Tavg is not more than 0.5%, and T is not more than 3.0%.
Description
Technical field
The present invention relates to infrared filtering sensitive element field, especially a kind of 4700nm long-pass infrared filtering sensitive element.
Background technology
Infrared thermography (thermal imaging system or infrared thermography) detects infrared energy (heat) by noncontact, and be converted into electric signal, and then Heat of Formation image and temperature value over the display, and a kind of checkout equipment that can calculate temperature value.Infrared thermography (thermal imaging system or infrared thermography) can, by the heat precise quantification that detects or measurement, make you observe heat picture, accurately can also identify and Exact Analysis the fault zone of heating.
The detector of infrared thermography is the key realizing infrared energy (heat energy) switching electrical signals, the infrared energy (heat energy) sent due to various biology is different, so in order to observe the heat picture of certain particular organisms in routine use, people often add infrared filtering sensitive element in detector, detector can be made only to accept the infrared energy (heat energy) of specific band by infrared filtering sensitive element, ensure the imaging results of infrared thermography.
But current infrared filtering sensitive element, its signal to noise ratio (S/N ratio) is low, low precision, can not meet the needs of market development.
Summary of the invention
The object of the invention is the deficiency in order to solve above-mentioned technology and the 4700nm long-pass infrared filtering sensitive element that a kind of measuring accuracy is high, greatly can improve signal to noise ratio (S/N ratio) is provided.
In order to achieve the above object, a kind of 4700nm long-pass infrared filtering sensitive element designed by the present invention, comprising with Si is raw-material substrate, with Ge, ZnS is the first filming layer and with Ge, ZnS is the second film plating layer, and described substrate is located between the first filming layer and the second film plating layer, it is characterized in that described the first filming layer is arranged in order the Ge layer including 96nm thickness from inside to outside, the ZnS layer of 158nm thickness, the Ge layer of 139nm thickness, the ZnS layer of 147nm thickness, the Ge layer of 106nm thickness, the ZnS layer of 157nm thickness, the Ge layer of 89nm thickness, the ZnS layer of 220nm thickness, the Ge layer of 118nm thickness, the ZnS layer of 198nm thickness, the Ge layer of 99nm thickness, the ZnS layer of 156nm thickness, the Ge layer of 101nm thickness, the ZnS layer of 169nm thickness, the Ge layer of 134nm thickness, the ZnS layer of 163nm thickness, the Ge layer of 185nm thickness, the ZnS layer of 232nm thickness, the Ge layer of 177nm thickness, the ZnS layer of 166nm thickness, the Ge layer of 135nm thickness, the ZnS layer of 261nm thickness, the Ge layer of 206nm thickness, the ZnS layer of 158nm thickness, the Ge layer of 110nm thickness, the ZnS layer of 143nm thickness, the Ge layer of 241nm thickness, the ZnS layer of 126nm thickness, the Ge layer of 215nm thickness, the ZnS layer of 209nm thickness, the Ge layer of 193nm thickness, the ZnS layer of 924nm thickness, the second described film plating layer is arranged in order the Ge layer including 109nm thickness from inside to outside, the ZnS layer of 152nm thickness, the Ge layer of 243nm thickness, the ZnS layer of 213nm thickness, the Ge layer of 203nm thickness, the ZnS layer of 248nm thickness, the Ge layer of 189nm thickness, the ZnS layer of 296nm thickness, the Ge layer of 185nm thickness, the ZnS layer of 347nm thickness, the Ge layer of 163nm thickness, the ZnS layer of 364nm thickness, the Ge layer of 141nm thickness, the ZnS layer of 351nm thickness, the Ge layer of 184nm thickness, the ZnS layer of 358nm thickness, the Ge layer of 261nm thickness, the ZnS layer of 354nm thickness, the Ge layer of 267nm thickness, the ZnS layer of 470nm thickness, the Ge layer of 197nm thickness, the ZnS layer of 561nm thickness, the Ge layer of 231nm thickness, the ZnS layer of 367nm thickness, the Ge layer of 372nm thickness, the ZnS layer of 265nm thickness, the Ge layer of 260nm thickness, the ZnS layer of 1005nm thickness.
The thickness that above-mentioned each material is corresponding, its permission changes in margin tolerance, and the scope of its change belongs to the scope of this patent protection, is identity relation.The tolerance of usual thickness is at about 10nm.
A kind of 4700nm long-pass infrared filtering sensitive element that the present invention obtains, it is in temperature taking process, can improve signal to noise ratio (S/N ratio) greatly, improves accurate testing degree, is suitable for promoting on a large scale and using.This optical filtering sensitive element 5%Cut on=4700nm, 6700 ~ 13500nm, Tavg >=70%, 1500 ~ 4200nm, Tavg≤0.5%, T≤3.0%.
Accompanying drawing explanation
Fig. 1 is embodiment one-piece construction schematic diagram.
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
In figure: the first filming layer 1, substrate 2, second film plating layer 3.
Embodiment
Below by embodiment, the invention will be further described by reference to the accompanying drawings.
Embodiment 1.
As depicted in figs. 1 and 2, a kind of 4700nm long-pass infrared filtering sensitive element that the present embodiment describes, comprising with Si is raw-material substrate 2, with Ge, ZnS is the first filming layer 1 and with Ge, ZnS is the second film plating layer 3, and described substrate 2 is located between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order the Ge layer including 96nm thickness from inside to outside, the ZnS layer of 158nm thickness, the Ge layer of 139nm thickness, the ZnS layer of 147nm thickness, the Ge layer of 106nm thickness, the ZnS layer of 157nm thickness, the Ge layer of 89nm thickness, the ZnS layer of 220nm thickness, the Ge layer of 118nm thickness, the ZnS layer of 198nm thickness, the Ge layer of 99nm thickness, the ZnS layer of 156nm thickness, the Ge layer of 101nm thickness, the ZnS layer of 169nm thickness, the Ge layer of 134nm thickness, the ZnS layer of 163nm thickness, the Ge layer of 185nm thickness, the ZnS layer of 232nm thickness, the Ge layer of 177nm thickness, the ZnS layer of 166nm thickness, the Ge layer of 135nm thickness, the ZnS layer of 261nm thickness, the Ge layer of 206nm thickness, the ZnS layer of 158nm thickness, the Ge layer of 110nm thickness, the ZnS layer of 143nm thickness, the Ge layer of 241nm thickness, the ZnS layer of 126nm thickness, the Ge layer of 215nm thickness, the ZnS layer of 209nm thickness, the Ge layer of 193nm thickness, the ZnS layer of 924nm thickness, the second described film plating layer 3 is arranged in order the Ge layer including 109nm thickness from inside to outside, the ZnS layer of 152nm thickness, the Ge layer of 243nm thickness, the ZnS layer of 213nm thickness, the Ge layer of 203nm thickness, the ZnS layer of 248nm thickness, the Ge layer of 189nm thickness, the ZnS layer of 296nm thickness, the Ge layer of 185nm thickness, the ZnS layer of 347nm thickness, the Ge layer of 163nm thickness, the ZnS layer of 364nm thickness, the Ge layer of 141nm thickness, the ZnS layer of 351nm thickness, the Ge layer of 184nm thickness, the ZnS layer of 358nm thickness, the Ge layer of 261nm thickness, the ZnS layer of 354nm thickness, the Ge layer of 267nm thickness, the ZnS layer of 470nm thickness, the Ge layer of 197nm thickness, the ZnS layer of 561nm thickness, the Ge layer of 231nm thickness, the ZnS layer of 367nm thickness, the Ge layer of 372nm thickness, the ZnS layer of 265nm thickness, the Ge layer of 260nm thickness, the ZnS layer of 1005nm thickness.
Claims (1)
1. a 4700nm long-pass infrared filtering sensitive element, comprising with Si is raw-material substrate (2), with Ge, ZnS is the first filming layer (1) and with Ge, ZnS is the second film plating layer (3), and described substrate (2) is located between the first filming layer (1) and the second film plating layer (3), it is characterized in that described the first filming layer (1) is arranged in order the Ge layer including 96nm thickness from inside to outside, the ZnS layer of 158nm thickness, the Ge layer of 139nm thickness, the ZnS layer of 147nm thickness, the Ge layer of 106nm thickness, the ZnS layer of 157nm thickness, the Ge layer of 89nm thickness, the ZnS layer of 220nm thickness, the Ge layer of 118nm thickness, the ZnS layer of 198nm thickness, the Ge layer of 99nm thickness, the ZnS layer of 156nm thickness, the Ge layer of 101nm thickness, the ZnS layer of 169nm thickness, the Ge layer of 134nm thickness, the ZnS layer of 163nm thickness, the Ge layer of 185nm thickness, the ZnS layer of 232nm thickness, the Ge layer of 177nm thickness, the ZnS layer of 166nm thickness, the Ge layer of 135nm thickness, the ZnS layer of 261nm thickness, the Ge layer of 206nm thickness, the ZnS layer of 158nm thickness, the Ge layer of 110nm thickness, the ZnS layer of 143nm thickness, the Ge layer of 241nm thickness, the ZnS layer of 126nm thickness, the Ge layer of 215nm thickness, the ZnS layer of 209nm thickness, the Ge layer of 193nm thickness, the ZnS layer of 924nm thickness, described the second film plating layer (3) is arranged in order the Ge layer including 109nm thickness from inside to outside, the ZnS layer of 152nm thickness, the Ge layer of 243nm thickness, the ZnS layer of 213nm thickness, the Ge layer of 203nm thickness, the ZnS layer of 248nm thickness, the Ge layer of 189nm thickness, the ZnS layer of 296nm thickness, the Ge layer of 185nm thickness, the ZnS layer of 347nm thickness, the Ge layer of 163nm thickness, the ZnS layer of 364nm thickness, the Ge layer of 141nm thickness, the ZnS layer of 351nm thickness, the Ge layer of 184nm thickness, the ZnS layer of 358nm thickness, the Ge layer of 261nm thickness, the ZnS layer of 354nm thickness, the Ge layer of 267nm thickness, the ZnS layer of 470nm thickness, the Ge layer of 197nm thickness, the ZnS layer of 561nm thickness, the Ge layer of 231nm thickness, the ZnS layer of 367nm thickness, the Ge layer of 372nm thickness, the ZnS layer of 265nm thickness, the Ge layer of 260nm thickness, the ZnS layer of 1005nm thickness.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410733883.7A CN104597544A (en) | 2014-12-07 | 2014-12-07 | 4700 nm long-wave pass infrared filtering sensitive element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410733883.7A CN104597544A (en) | 2014-12-07 | 2014-12-07 | 4700 nm long-wave pass infrared filtering sensitive element |
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| CN104597544A true CN104597544A (en) | 2015-05-06 |
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| CN201410733883.7A Pending CN104597544A (en) | 2014-12-07 | 2014-12-07 | 4700 nm long-wave pass infrared filtering sensitive element |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105487154A (en) * | 2015-12-30 | 2016-04-13 | 杭州麦乐克电子科技有限公司 | Infrared imaging optical filter with a passing band of 3600 to 4950nm |
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| CN202305860U (en) * | 2012-03-12 | 2012-07-04 | 杭州麦乐克电子科技有限公司 | Infrared filter capable of transmitting 5,500 nanometer long wave |
| CN202472022U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | 4530-nanometer band-pass infrared optical filter |
| CN202472020U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | Infrared optical filter with 4640-nanometer bandpass |
| CN103713344A (en) * | 2013-11-29 | 2014-04-09 | 杭州麦乐克电子科技有限公司 | Nitric oxide gas detection filter with central wavelength of 4580 nm |
| CN204374468U (en) * | 2014-12-07 | 2015-06-03 | 杭州麦乐克电子科技有限公司 | 4700nm long-pass infrared filtering sensitive element |
-
2014
- 2014-12-07 CN CN201410733883.7A patent/CN104597544A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202305860U (en) * | 2012-03-12 | 2012-07-04 | 杭州麦乐克电子科技有限公司 | Infrared filter capable of transmitting 5,500 nanometer long wave |
| CN202472022U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | 4530-nanometer band-pass infrared optical filter |
| CN202472020U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | Infrared optical filter with 4640-nanometer bandpass |
| CN103713344A (en) * | 2013-11-29 | 2014-04-09 | 杭州麦乐克电子科技有限公司 | Nitric oxide gas detection filter with central wavelength of 4580 nm |
| CN204374468U (en) * | 2014-12-07 | 2015-06-03 | 杭州麦乐克电子科技有限公司 | 4700nm long-pass infrared filtering sensitive element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105487154A (en) * | 2015-12-30 | 2016-04-13 | 杭州麦乐克电子科技有限公司 | Infrared imaging optical filter with a passing band of 3600 to 4950nm |
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Address after: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Applicant after: Hangzhou Mai peak Polytron Technologies Inc Address before: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Applicant before: Multi IR Optoelectronics Co., Ltd. |
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Application publication date: 20150506 |
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| RJ01 | Rejection of invention patent application after publication |