CN104579189A - Circuit structure for improving harmonic performance of radio frequency power amplifier - Google Patents
Circuit structure for improving harmonic performance of radio frequency power amplifier Download PDFInfo
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- CN104579189A CN104579189A CN201510057384.5A CN201510057384A CN104579189A CN 104579189 A CN104579189 A CN 104579189A CN 201510057384 A CN201510057384 A CN 201510057384A CN 104579189 A CN104579189 A CN 104579189A
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Abstract
The invention relates to the technical field of communications, and particularly relates to a circuit structure for improving the harmonic performance of a radio frequency power amplifier. The circuit structure comprises a radio-frequency power amplifier tube, a secondary harmonic suppression network, a triple harmonic suppression network, a higher harmonic suppression network, a first matching inductance, a second matching inductance and a blocking capacitor, wherein the first matching inductance, the second matching inductance, the triple harmonic suppression network and the higher harmonic suppression network form a low-pass output matching network of the power amplifier and the low-pass output matching network is connected to a collector of the power amplifier tube; the secondary harmonic suppression network is connected to the collector of the power amplifier tube, and is independent from the output matching network, the suppression frequency can be regulated, the triple harmonic suppression network and the higher harmonic suppression network are included in the output matching network, and the higher harmonic suppression frequency can be regulated. According to the above content, the circuit structure provided by the invention is simple in structure and strong in flexibility; the harmonic component generated by the radio frequency power amplifier is effectively suppressed and the performance of the power amplifier is improved.
Description
Technical field
The present invention relates to communication technical field field, particularly relate to a kind of circuit structure improving radio-frequency power amplifier harmonic performance.
Background technology
Along with developing rapidly of mobile radio telecommunications technology and extensively popularizing of handheld wireless communication device, the requirement of wireless communication system standards to transmitter is more and more harsher.Power amplifier is as the chief component of transmitter, and primary responsibility carries out undistorted amplification to the small-signal that prime is sent here and sent by signal with driven antenna.The power consumption of its efficiency to whole transmitter plays a decisive role, and meanwhile, the linearity of power amplifier have impact on again the dynamic range of complete machine.Traditional power amplifier, in order to improve its operating efficiency, all makes the final stage of amplifier work in saturation condition, at this moment because the non-linear of amplifier tube will have a large amount of harmonic componentss to produce.If do not processed these harmonic energies, will cause the waste of energy, reduce the operating efficiency of power amplifier, these harmonic components will be disturbed the useful signal of other channels simultaneously, are degrading the linearity of power amplifier.Therefore, recovery suppression is carried out to the harmonic component that power amplifier amplifier produces, significant to its performance of raising.
Because the non-linear of power amplifier produces primarily of final stage, so the method that the harmonic energy produced power amplifier recycles mainly concentrates in output matching network.In prior art, report kinds of schemes, as in Chinese patent 201310039803.3, the method is by the output at amplifier, the input of output matching network is introduced λ/2 short-circuited transmission line and is carried out recovery suppression to the even-order harmonic that power amplifier produces, at the output of output matching network, namely load place λ/12 open circuited transmission line in parallel and λ/6 short-circuited transmission line suppress triple-frequency harmonics.
In Chinese patent 201010191033.0, the pressure welding PAD that the method is provided by MMIC technique, MIN electric capacity, the series resonant network that grounding through hole and pressure welding gold thread are formed absorbs the harmonic energy that power amplifier produces.
In the harmonic management method reported, or use λ/n transmission line, or method therefor too relies on semiconducter process.The use of λ/n transmission line makes designed power amplifier volume too huge, and the harmonic management method depending on MMIC technique makes the harmonic performance fluctuation of designed power amplifier large, and product yields is low, is unfavorable for large-scale production.
Summary of the invention
The object of the invention is to propose a kind of structure simple, be beneficial to miniaturization, debug harmonic processing circuit structure flexibly simultaneously.This circuit structure does not singly consider 2 subharmonic, still suppresses high order harmonic component, significantly can improve the harmonic performance of power amplifier.
For reaching this object, the present invention by the following technical solutions:
Improve a circuit structure for radio-frequency power amplifier harmonic performance, comprise power amplifier, output matching network and second harmonic resonant network; The output of described power amplifier is connected with described output matching network with described second harmonic resonant network respectively; Described output matching network comprises triple-frequency harmonics resonant network and higher harmonic resonance network.
Illustrate further, a kind of circuit structure improving power amplifier harmonic performance provided by the invention, it comprises: the upper MIN electric capacity of die, first coupling inductance, the second coupling inductance, the first matching capacitance, second matching capacitance, capacitance, the first microstrip line, the second microstrip line, 3rd micro-band, 4th microstrip line, the first binding gold thread, the second binding gold thread.
On the collector electrode that described first coupling inductance and MIN electric capacity are connected to power tube and MIN electric capacity realize on sheet.
The other end of described MIN electric capacity is connected with the first microstrip line by binding gold thread and jointly forms second harmonic resonant network, and by regulating gold thread length and the first microstrip line length can control to control resonance frequency flexibly, tuning rear class triple-frequency harmonics and limitation of high harmonics network are on the impact of second harmonic.
Described second microstrip line one end ground connection other end is connected with the first matching capacitance and jointly forms LC series resonant network, the triple-frequency harmonics produced for suppressing power amplifier, this LC resonant network forms first order low pass LC matching network together with the first coupling inductance simultaneously.
Described 3rd microstrip line one end ground connection other end is connected with the second matching capacitance, and simultaneously second binding gold thread one end pressure welding micro-ly to be brought the 3rd, and other end pressure welding is on the 4th microstrip line.
3rd microstrip line, second binding gold thread, 4th microstrip line and the second matching capacitance enough become a LC resonant network, the high order harmonic component produced for suppressing power amplifier, by regulating the binding position of gold thread and length, can flexible resonance point, suppress the harmonic wave of more than three times, this LC resonant network is also tuning simultaneously prime secondary and triple-frequency harmonics Suppression network are on the impact of high order harmonic component, and it and the second matching capacitance together constitute second level low pass matching network.
Described second harmonic Suppression network is independent of the two-stage low pass LC output matching network of power amplifier, and triple-frequency harmonics Suppression network and limitation of high harmonics network packet are contained in the output matching network of power amplifier.
Described capacitance one end is connected with load, the other end respectively with, second coupling inductance is connected with the second matching capacitance.
More excellent, the binding gold thread in described second harmonic resonant network and the adjustable in length of microstrip line.
More excellent, the binding gold thread in described higher harmonic resonance network and the adjustable in length of microstrip line.
The present invention is according to foregoing, and the second harmonic provided suppresses loop independent of output matching network, by regulating the length of the first binding gold thread can change LC resonance point, controls resonance frequency flexibly.The triple-frequency harmonics provided and limitation of high harmonics network packet are contained in output matching network, wherein high order harmonic component network can change resonance point flexibly by the position and length regulating the second binding gold thread, can resonance point be made as required to be in more than third harmonic frequencies, realize the effective absorption to the higher harmonic components that power amplifier produces.Emulation and experimental result show, utilize this power amplifier designed by harmonic suppression circuit structure to obtain good harmonic performance, improve the linearity of power amplifier.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of one embodiment of the present of invention;
Fig. 2 is the equivalent circuit diagram of Fig. 1;
Fig. 3 is second harmonic suppression figure when the first binding gold thread Wire1 gets different length in one embodiment of the present of invention;
Fig. 4 is higher harmonic restraining drawing when the first binding gold thread Wire2 gets different length in one embodiment of the present of invention;
Fig. 5 is not for adopt any harmonic suppression technique power amplifier output power and each harmonic power to change simulation curve with input power;
Fig. 6 is for adopting the simulation curve that the power amplifier designed by the circuit structure of one embodiment of the present of invention exports and each harmonic power changes with input power.
Embodiment
Technical scheme of the present invention is further illustrated by embodiment below in conjunction with accompanying drawing.
As Fig. 1, a kind of circuit structure improving power amplifier harmonic performance provided by the invention, be made up of four parts: second harmonic resonance Suppression network 101, triple-frequency harmonics resonance Suppression network 102, limitation of high harmonics network 103 and the two-stage low pass LC output matching network be made up of inductance 105, inductance 106, electric capacity C3 and electric capacity C4.
Described second harmonic Suppression network 101 and by 102,103,105, the 106 two-stage low pass LC output matchings formed are connected on the collector electrode of power tube 104.
Second harmonic resonance Suppression network in a kind of circuit structure improving power amplifier harmonic performance provided by the invention, by MIN electric capacity C2 on die and binding gold thread Wire1, the microstrip line TL1 on substrate forms.Wherein MIN electric capacity is provided by foundries device model storehouse, and Wire1 equivalence can become an inductance with microstrip line series connection.Equivalent electric circuit is the L3C2 series resonant network in Fig. 2, and its resonance is on second harmonic frequency.Wherein microstrip line TL1 is implemented on substrate, the length of flexibly changing series connection TL1 is become by the position changing binding gold thread Wire1 second solder joint on TL1, and then the size of L3 in change equivalent electric circuit, thus can the frequency of flexible second harmonic resonant network as required.Height and length simultaneously also by changing binding gold thread control the size of L3 in equivalent electric circuit further, thus change the size of resonance frequency, increase debug flexibility further.Be illustrated in figure 3 binding line length and be respectively 1mil, the change of resonance frequency when 4mil, 8mil, as can be seen from Fig., the size of resonance frequency can be controlled neatly by the length changing binding gold thread Wire1.
Second harmonic resonance frequency is
, wherein ω is 2 times of fundamental frequencies, can be changed the size of L3, thus change resonance frequency size by the length controlling binding gold thread Wire1 and TL1.
Triple-frequency harmonics Suppression network in a kind of circuit structure improving power amplifier harmonic performance provided by the invention is made up of the first matching capacitance C3 and microstrip line TL2, and wherein electric capacity C3 is that SMD elements T L2 microstrip line realizes on substrate.TL2 microstrip line one end ground connection, the other end is connected with the first matching capacitance C3, forms the series LC resonant loop of one end ground connection, and meanwhile, the other end of electric capacity C3 is connected to again the junction of the first coupling inductance 105 and the second coupling inductance 106.This triple-frequency harmonics becomes an electric capacity in fundamental frequency equivalence, forms first order low pass LC network, be connected to the collector electrode of power tube 104 with 105, participates in output impedance conversion.
Limitation of high harmonics network in a kind of circuit structure improving power amplifier harmonic performance provided by the invention is made up of two microstrip transmission line TL3 and TL4 be together in parallel by binding gold thread Wire2 and electric capacity C4, one end ground connection of two microstrip transmission lines, the other end is by connecting with electric capacity C4 after binding gold thread Wire2 parallel connection, form the LC resonant network of one end ground connection, this LC resonant network becomes an electric capacity and inductance 106 to form second level low pass LC output matching in fundamental frequency equivalence, this low pass LC output matching network is connected with electric capacity C3 with 105, the output matching network of common formation power amplifier.
Two microstrip transmission line TL3 with TL4 be together in parallel by binding gold thread Wire2 can equivalence become this inductance of inductance L 5 as shown in Figure 2 and electric capacity C4 to form series LC resonant network, this network resonance is in high order harmonic component, by regulating the length and location of binding gold thread Wire2, the size of equivalent inductance L5 can be controlled further, and then the resonance point of this resonant network can be controlled as required.
Fig. 4 is the change of Wire2 limitation of high harmonics point when getting different length, can find out by regulating the length of Wire2 can effectively control limitation of high harmonics frequency from figure.
Capacitance 107 one end is connected to the junction of 106 and limitation of high harmonics network 103, and the other end is connected to load place.
Fig. 5 is not for adopting each harmonic power size simulation curve of the power amplifier designed by any harmonic suppression technique.
Fig. 6 is for adopting each harmonic power size simulation curve of power amplifier designed by a kind of circuit structure improving power amplifier harmonic performance provided by the invention.
Comparison diagram 5 and Fig. 6 known when power amplifier is in saturation condition, adopt power amplifier 2 to 4 subharmonic designed by a kind of circuit structure improving power amplifier harmonic performance provided by the invention to improve 59dBc respectively, 56dBc, 52dBc.Can obtain adopting power amplifier designed by a kind of circuit structure improving power amplifier harmonic performance provided by the invention can suppress the harmonic wave of power amplifier significantly, improve the linearity of power amplifier.
Below know-why of the present invention is described in conjunction with specific embodiments.These describe just in order to explain principle of the present invention, and can not be interpreted as limiting the scope of the invention by any way.Based on explanation herein, those skilled in the art does not need to pay performing creative labour can associate other embodiment of the present invention, and these modes all will fall within protection scope of the present invention.
Claims (5)
1. improve a circuit structure for radio-frequency power amplifier harmonic performance, it is characterized in that, comprise power amplifier, output matching network and second harmonic resonant network; The output of described power amplifier is connected with described output matching network with described second harmonic resonant network respectively; Described output matching network comprises triple-frequency harmonics resonant network and higher harmonic resonance network;
Described circuit structure, comprises MIN electric capacity on die, the first coupling inductance, the second coupling inductance, the first matching capacitance, second matching capacitance, capacitance, the first microstrip line, the second microstrip line, 3rd microstrip line, the 4th microstrip line, the first binding gold thread, the second binding gold thread;
The other end of described MIN electric capacity is connected with the first microstrip line by the first binding gold thread and jointly forms second harmonic resonant network; Described second microstrip line one end ground connection other end is connected with the first matching capacitance and jointly forms LC series resonant network;
3rd microstrip line, the second binding gold thread, the 4th microstrip line and the second matching capacitance form a LC resonant network; This LC resonant network is also tuning prime secondary and triple-frequency harmonics Suppression network are on the impact of high order harmonic component, and it and the second matching capacitance together constitute second level low pass matching network.
2. a kind of circuit structure improving radio-frequency power amplifier harmonic performance according to claims 1, is characterized in that, on the collector electrode that described first coupling inductance and MIN electric capacity are connected to power tube and MIN electric capacity realize on sheet.
3. a kind of circuit structure improving radio-frequency power amplifier harmonic performance according to claims 1, is characterized in that, the adjustable in length of described binding gold thread and microstrip line.
4. a kind of circuit structure improving radio-frequency power amplifier harmonic performance according to claims 1, it is characterized in that, described 3rd microstrip line one end ground connection other end is connected with the second matching capacitance, simultaneously second binding gold thread one end pressure welding micro-ly to be brought the 3rd, and other end pressure welding is on the 4th microstrip line.
5. a kind of circuit structure improving radio-frequency power amplifier harmonic performance according to claims 1, is characterized in that, the binding gold thread in described higher harmonic resonance network and the adjustable in length of microstrip line.
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| CN201510057384.5A CN104579189A (en) | 2015-02-04 | 2015-02-04 | Circuit structure for improving harmonic performance of radio frequency power amplifier |
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| CN201510057384.5A CN104579189A (en) | 2015-02-04 | 2015-02-04 | Circuit structure for improving harmonic performance of radio frequency power amplifier |
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Cited By (22)
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| CN104967436A (en) * | 2015-07-01 | 2015-10-07 | 上海斐讯数据通信技术有限公司 | Circuit for improving performance of mobile terminal |
| CN107370460A (en) * | 2017-07-12 | 2017-11-21 | 深圳国民飞骧科技有限公司 | A kind of circuit structure and method for improving radio-frequency power amplifier harmonic inhibition capability |
| CN107425818A (en) * | 2017-04-17 | 2017-12-01 | 东莞赛唯莱特电子技术有限公司 | A kind of output matching circuit structure for improving radio-frequency power amplifier harmonic performance |
| CN107947743A (en) * | 2018-01-10 | 2018-04-20 | 无锡中普微电子有限公司 | Radio-frequency power amplifier for NB IOT technologies |
| CN108322194A (en) * | 2017-01-16 | 2018-07-24 | 天津大学（青岛）海洋工程研究院有限公司 | A kind of power amplifier of the high-output power high-gain based on current multiplexing technology |
| CN108964621A (en) * | 2018-10-12 | 2018-12-07 | 深圳飞骧科技有限公司 | Filtering framework is strengthened in a kind of radio-frequency power amplifier and its matching |
| WO2019051660A1 (en) * | 2017-09-13 | 2019-03-21 | 北京泰龙电子技术有限公司 | Radio-frequency power supply for improving efficiency of radio-frequency power amplifier |
| WO2019079999A1 (en) * | 2017-10-25 | 2019-05-02 | Telefonaktiebolaget Lm Ericsson (Publ) | Harmonic control circuit and apparatus as well as method for manufacturing harmonic control apparatus |
| CN109860155A (en) * | 2018-12-12 | 2019-06-07 | 江苏博普电子科技有限责任公司 | A kind of GaN microwave power device comprising π type matching network |
| CN109921746A (en) * | 2018-12-20 | 2019-06-21 | 佛山臻智微芯科技有限公司 | A kind of impedance matching circuit structure improving radio-frequency power amplifier performance |
| CN110222366A (en) * | 2019-04-28 | 2019-09-10 | 广东工业大学 | A kind of output impedance matching networks design method inhibiting function with higher harmonics |
| CN110289819A (en) * | 2019-07-04 | 2019-09-27 | 广东工业大学 | A kind of output matching network of radio-frequency front-end and its radio-frequency power amplifier |
| CN110649928A (en) * | 2019-09-20 | 2020-01-03 | 深圳迈睿智能科技有限公司 | Microwave Doppler module |
| CN111478672A (en) * | 2020-04-10 | 2020-07-31 | 四川和芯微电子股份有限公司 | Radio frequency power amplifier |
| CN111510088A (en) * | 2020-04-23 | 2020-08-07 | 广州慧智微电子有限公司 | Harmonic suppression radio frequency power amplifier |
| CN112039448A (en) * | 2019-06-04 | 2020-12-04 | 株式会社村田制作所 | Power amplifying circuit |
| US10879850B2 (en) | 2016-10-31 | 2020-12-29 | Vanchip (Tianjin) Technology Co., Ltd. | Radio frequency power amplifier for inhibiting harmonic wave and stray, chip and communication terminal |
| CN112385141A (en) * | 2018-07-10 | 2021-02-19 | 华为技术有限公司 | Improved harmonic termination integrated passive device |
| CN112583361A (en) * | 2019-09-30 | 2021-03-30 | 天津大学青岛海洋技术研究院 | High-gain broadband low-noise amplifier based on noise elimination |
| CN112968677A (en) * | 2021-02-03 | 2021-06-15 | 杭州电子科技大学 | Design method of dual-frequency high-efficiency out-phase power amplifier |
| CN113422584A (en) * | 2021-05-31 | 2021-09-21 | 北京无线电测量研究所 | Power amplifier |
| CN116192060A (en) * | 2023-04-27 | 2023-05-30 | 四川省华盾防务科技股份有限公司 | Harmonic suppression structure for high-power carrier plate power amplifier |
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| US10879850B2 (en) | 2016-10-31 | 2020-12-29 | Vanchip (Tianjin) Technology Co., Ltd. | Radio frequency power amplifier for inhibiting harmonic wave and stray, chip and communication terminal |
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| CN110222366B (en) * | 2019-04-28 | 2022-08-12 | 广东工业大学 | Design method of output impedance matching network with high harmonic suppression function |
| CN110222366A (en) * | 2019-04-28 | 2019-09-10 | 广东工业大学 | A kind of output impedance matching networks design method inhibiting function with higher harmonics |
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| CN110289819A (en) * | 2019-07-04 | 2019-09-27 | 广东工业大学 | A kind of output matching network of radio-frequency front-end and its radio-frequency power amplifier |
| CN110649928A (en) * | 2019-09-20 | 2020-01-03 | 深圳迈睿智能科技有限公司 | Microwave Doppler module |
| CN112583361A (en) * | 2019-09-30 | 2021-03-30 | 天津大学青岛海洋技术研究院 | High-gain broadband low-noise amplifier based on noise elimination |
| CN111478672A (en) * | 2020-04-10 | 2020-07-31 | 四川和芯微电子股份有限公司 | Radio frequency power amplifier |
| CN111510088A (en) * | 2020-04-23 | 2020-08-07 | 广州慧智微电子有限公司 | Harmonic suppression radio frequency power amplifier |
| CN112968677A (en) * | 2021-02-03 | 2021-06-15 | 杭州电子科技大学 | Design method of dual-frequency high-efficiency out-phase power amplifier |
| CN113422584A (en) * | 2021-05-31 | 2021-09-21 | 北京无线电测量研究所 | Power amplifier |
| CN116192060A (en) * | 2023-04-27 | 2023-05-30 | 四川省华盾防务科技股份有限公司 | Harmonic suppression structure for high-power carrier plate power amplifier |
| CN116192060B (en) * | 2023-04-27 | 2023-09-05 | 四川省华盾防务科技股份有限公司 | Harmonic suppression structure for high-power carrier plate power amplifier |
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