CN107947743A - Radio-frequency power amplifier for NB IOT technologies - Google Patents
Radio-frequency power amplifier for NB IOT technologies Download PDFInfo
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- CN107947743A CN107947743A CN201810023026.6A CN201810023026A CN107947743A CN 107947743 A CN107947743 A CN 107947743A CN 201810023026 A CN201810023026 A CN 201810023026A CN 107947743 A CN107947743 A CN 107947743A
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- radio
- frequency power
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- 238000005516 engineering process Methods 0.000 title description 10
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000005540 biological transmission Effects 0.000 claims abstract description 5
- 101001096365 Homo sapiens Replication factor C subunit 2 Proteins 0.000 claims description 7
- 102100037851 Replication factor C subunit 2 Human genes 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 7
- 230000003321 amplification Effects 0.000 claims description 4
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 4
- 101001096355 Homo sapiens Replication factor C subunit 3 Proteins 0.000 claims description 2
- 102100037855 Replication factor C subunit 3 Human genes 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 241000208340 Araliaceae Species 0.000 description 2
- 244000247747 Coptis groenlandica Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 2
- 235000003140 Panax quinquefolius Nutrition 0.000 description 2
- 238000010009 beating Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 235000008434 ginseng Nutrition 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
Abstract
Disclosed herein a kind of radio-frequency power amplifier, it includes：Substrate；Rf inputs；RF output end；Input matching circuit, first order radio-frequency power structure for amplifying, intervalve matching circuit, second level radio-frequency power structure for amplifying and the output matching circuit being coupled to successively between the rf inputs and the RF output end.Inductance in input matching circuit, intervalve matching circuit and output matching circuit is formed by the transmission line on substrate.Without SMD inductance, design is simple, reduces cost.
Description
【Technical field】
The present invention relates to radio circuit field, more particularly to for NB-IOT (Narrow Band Internet of
Things, NB-IoT, adapt to honeycomb arrowband Internet of Things) radio-frequency power amplifier of technology.
【Background technology】
The modular design of existing one-segment 2mm*2.5mm power amplifier modules：One gallium arsenide chips provides power
The required radio-frequency power of amplifier；One CMOS (Complementary Metal Oxide Semiconductor) chip
The operating voltage value that gallium arsenide chips are stablized is supplied to ensure the working status of gallium arsenide transistor from external voltage source ripple
Dynamic influence；Factory is encapsulated to paste gallium arsenide chips, CMOS chip, SMD (Surface Mount Technology) capacitor and inductor
On substrate, then they are linked together by way of beating gold thread or copper wire, then the handle by way of beating gold thread
They link together, they are packaged together finally by the packing forms of LGA (Land Grid Array).
Need to use 0201 or 01005 SMD capacitor and inductors and substrate in above-mentioned modular design.SMD capacitor and inductors
Effect is radio-frequency match, capacitor filtering and radio frequency blocking：Radio-frequency match includes input and matches, and interstage matched and output match；Electricity
Capacitor filter is mainly filtered the low frequency on power supply to ensure radio-frequency power amplifier work at steady-state；Radio frequency
Capacitance ensures that radiofrequency signal be able to cannot pass through by the path and direct current.Have to introduce using the design of SMD at the same time
Substrate is packaged.
It is of the prior art complicated using the designing scheme packaging cost of SMD capacitor and inductors and substrate height, design.Therefore,
It is necessary to propose a kind of improved plan to overcome the above problem.
【The content of the invention】
It is an object of the invention to provide a kind of radio-frequency power amplifier for NB-IOT technologies, it uses no SMD electricity
Hold the designing scheme of inductance, packaging cost can be saved.
To achieve the object of the present invention, the present invention provides a kind of radio-frequency power amplifier, it includes：Substrate；Radio frequency inputs
End；RF output end；Input matching circuit between the rf inputs and the RF output end, first are coupled to successively
Level radio-frequency power structure for amplifying, intervalve matching circuit, second level radio-frequency power structure for amplifying and output matching circuit, wherein first
Level radio-frequency power structure for amplifying includes the first radio-frequency power amplifying transistor and the first biasing circuit, and the first biasing circuit gives first
The base stage of radio-frequency power amplifying transistor provides bias voltage, and second level radio-frequency power structure for amplifying is put including the second radio-frequency power
Big transistor and the second biasing circuit, the second biasing circuit provide biased electrical to the base stage of the second radio-frequency power amplifying transistor
Pressure, input matching circuit include the electricity being coupled to successively between the base stage of rf inputs and the first radio-frequency power amplifying transistor
Hold the capacitance C2 and resistance between C1 and resistance R1, the collector for being coupled to the first radio-frequency power amplifying transistor successively and base stage
R4, and the inductance L1 being coupled between rf inputs and ground terminal；Intervalve matching circuit includes being coupled to power end and the
Inductance RFC1 between the collector of one radio-frequency power amplifying transistor, be coupled to the first radio-frequency power amplifying transistor successively
Capacitance C4, capacitance C5 and resistance R5 between the base stage of collector and the second radio-frequency power amplifying transistor, are coupled to capacitance C4
Inductance L3 between the intermediate node and ground terminal of capacitance C5, be coupled to the first radio-frequency power amplifying transistor collector and
Capacitance C3 and inductance L2 between ground terminal；Output matching circuit includes being coupled to power end and the second radio-frequency power amplification crystal
Inductance RFC2 between the collector of pipe, be coupled between the collector and RF output end of the second radio-frequency power amplifying transistor
Capacitance C8, the capacitance C6 and inductance being coupled to successively between the collector and ground terminal of the second radio-frequency power amplifying transistor
L4, the capacitance C7 and inductance L5 being coupled to successively between the collector and ground terminal of the second radio-frequency power amplifying transistor, coupling
Inductance L6 between RF output end and ground terminal；Wherein inductance L1, inductance L2, inductance L3, inductance L4, inductance L5, inductance
L6, inductance RFC1, inductance RFC2, inductance RFC3 are formed by the transmission line on substrate.
Compared with prior art, the radio-frequency power amplifier for NB-IOT technologies in the present invention is respectively positioned on except inductance
On chip piece, and each inductance is formed by the transmission line on substrate, and without SMD inductance, design is simple, reduces
Cost.
【Brief description of the drawings】
It will be better understood with reference to refer to the attached drawing and ensuing detailed description, the present invention, wherein same reference numeral
Corresponding same structure member, wherein：
Fig. 1 is the circuit diagram of the radio-frequency power amplifier for NB-IOT technologies in one embodiment in the present invention.
【Embodiment】
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
In view of this, the present invention proposes a kind of radio-frequency power amplifier for NB-IOT technologies, it need not be used
SMD capacitor and inductors and substrate.
Fig. 1 is the circuit of the radio-frequency power amplifier 100 for NB-IOT technologies in one embodiment in the present invention
Figure.The radio-frequency power amplifier 100 includes：Rf inputs IN；RF output end OUT；It is defeated that the radio frequency is coupled to successively
Enter input matching circuit between end and the RF output end, first order radio-frequency power structure for amplifying, intervalve matching circuit, the
Two level radio-frequency power structure for amplifying and output matching circuit.
First order radio-frequency power structure for amplifying includes the first radio-frequency power amplifying transistor T1 and the first biasing circuit, and first
Biasing circuit provides bias voltage to the base stage of the first radio-frequency power amplifying transistor, and second level radio-frequency power structure for amplifying includes
Second radio-frequency power amplifying transistor and the second biasing circuit, the second biasing circuit give the base of the second radio-frequency power amplifying transistor
Pole provides bias voltage.
Input matching circuit includes being coupled to the base stage of rf inputs and the first radio-frequency power amplifying transistor T1 successively
Between capacitance C1 and resistance R1, be coupled to the first radio-frequency power amplifying transistor successively collector and base stage between capacitance
C2 and resistance R4, and the inductance L1 being coupled between rf inputs and ground terminal.The parameter of input matching circuit is adjusted, can
So that it is 65-75 ohm that the collector of the first radio-frequency power amplifying transistor T1, which is output impedance,.
Intervalve matching circuit includes being coupled between the collector of power end and the first radio-frequency power amplifying transistor T1
Inductance RFC1, the collector for being coupled to the first radio-frequency power amplifying transistor T1 successively and the second radio-frequency power amplifying transistor T2
Base stage between capacitance C4, capacitance C5 and resistance R4, be coupled between capacitance C4 and the intermediate node and ground terminal of capacitance C5
Inductance L3, the capacitance C3 and inductance L2 being coupled between the collector and ground terminal of the first radio-frequency power amplifying transistor T1.
The parameter of intervalve matching circuit is adjusted, the collector that can cause the second radio-frequency power amplifying transistor T2 is that output impedance is 3-
5 ohm.Wherein, capacitance C3 and inductance L2 forms second order resonant network, and resonant frequency is twice of dominant frequency, suppresses the secondary of dominant frequency
Harmonic wave.In this embodiment, dominant frequency is 850Mhz.
Output matching circuit includes being coupled between the collector of power end and the second radio-frequency power amplifying transistor T2
Inductance RFC2, the capacitance C8 being coupled between the collector and RF output end of the second radio-frequency power amplifying transistor, successively coupling
The capacitance C6 and inductance L4 being connected between the collector and ground terminal of the second radio-frequency power amplifying transistor T2, are coupled to successively
Capacitance C7 and inductance L5 between the collector and ground terminal of two radio-frequency power amplifying transistors, are coupled to RF output end and connect
Inductance L6 between ground terminal.The parameter of output matching circuit is adjusted, it is that output impedance is 50 Europe that can cause RF output end OUT
Nurse.Wherein, capacitance C6 and inductance L4 forms second order resonant network, its resonant frequency is twice of dominant frequency, suppresses the secondary of dominant frequency
Harmonic wave；Capacitance C7 and inductance L5 form three rank resonant networks, the three times that resonant frequency is, suppress the triple-frequency harmonics of dominant frequency.
Part 110 in the dotted line frame of the radio-frequency power amplifier is located in chip, it is installed on a substrate, inductance
L1- inductance L6, inductance RFC1- inductance RFC2 is formed by the transmission line on substrate.Capacitance C1- capacitances C8 is that piece powers on
Hold, the radio-frequency power amplifier is formed on gallium arsenide chips.This way it is not necessary to SMD inductance capacitances can be completed to input
Matching, interstage matched and output matching.
First biasing circuit includes resistance R2, capacitance C9, bipolar transistor T3, T4 and T5, one end of resistance R2 and ginseng
Examine voltage end to be connected, the other end of resistance R2 is connected with the collector of bipolar transistor T5, the base stage of bipolar transistor T5
It is connected with its collector, the emitter of bipolar transistor T5 is connected with the collector of bipolar transistor T4, bipolar transistor
The base stage of pipe T4 is connected with its collector, and the emitter ground connection of bipolar transistor T4, capacitance C9 is coupled to bipolar transistor
Between the base stage and ground terminal of T3, the base stage of bipolar transistor T3 is connected with the collector of bipolar transistor T5, ambipolar
The collector of transistor T3 is connected with reference voltage end, and the emitter of bipolar transistor T3 is coupled to the amplification of the first radio-frequency power
The base stage of transistor.
Second biasing circuit includes resistance R3, capacitance C10, bipolar transistor T7, T8 and T6, one end of resistance R3 and ginseng
Examine voltage end to be connected, the other end of resistance R3 is connected with the collector of bipolar transistor T8, the base stage of bipolar transistor T8
It is connected with its collector, the emitter of bipolar transistor T8 is connected with the collector of bipolar transistor T7, bipolar transistor
The base stage of pipe T7 is connected with its collector, and the emitter ground connection of bipolar transistor T7, capacitance C10 is coupled to bipolar transistor
Between the base stage and ground terminal of T6, the base stage of bipolar transistor T6 is connected with the collector of bipolar transistor T8, ambipolar
The collector of transistor T6 is connected with reference voltage end, and the emitter of bipolar transistor T6 is coupled to the amplification of the second radio-frequency power
The base stage of transistor.
In the present invention, using unique compacting harmonic wave scheme：Intervalve matching circuit uses second order resonant network, defeated
Go out match circuit and three rank resonant networks are added using second order, the program is while harmonic wave is improved it is also ensured that output power and effect
Rate will not reduce.
Increase a second order resonance without SMD capacitor and inductors, intervalve matching circuit in radio-frequency power amplifier in the present invention
Network (C3 and L2) is used for improving harmonic wave and efficiency, and capacitance is using the capacitance on chip, and inductance is using substrate wire-wound inductor come real
It is existing；Output matching circuit improves harmonic wave and efficiency using second order resonant network and three rank resonant networks.
The word that the expressions such as " coupling ", " connected ", " connecting ", " connection ", " ground connection " in the present invention are electrically connected, except spy
Do not mentionlet alone bright outer, all represent direct or indirect and is electrical connected, being indirectly electrical connected means that centre can connect some devices
Part, such as resistance or inductance etc..
Described above has fully disclosed the embodiment of the present invention.It is pointed out that it is familiar with the field
Scope of the technical staff to any change that the embodiment of the present invention is done all without departing from claims of the present invention.
Correspondingly, the scope of claim of the invention is also not limited only to the embodiment.
Claims (4)
1. a kind of radio-frequency power amplifier, it is characterised in that it includes：
Substrate；
Rf inputs；
RF output end；
Input matching circuit, the first order radio-frequency power being coupled to successively between the rf inputs and the RF output end
Structure for amplifying, intervalve matching circuit, second level radio-frequency power structure for amplifying and output matching circuit,
Wherein first order radio-frequency power structure for amplifying includes the first radio-frequency power amplifying transistor and the first biasing circuit, and first is inclined
Circuits provide bias voltage to the base stage of the first radio-frequency power amplifying transistor, and second level radio-frequency power structure for amplifying includes the
Two radio-frequency power amplifying transistors and the second biasing circuit, the second biasing circuit give the base stage of the second radio-frequency power amplifying transistor
Bias voltage is provided,
Input matching circuit includes being coupled to successively between the base stage of rf inputs and the first radio-frequency power amplifying transistor
Capacitance C2 and electricity between capacitance C1 and resistance R1, the collector for being coupled to the first radio-frequency power amplifying transistor successively and base stage
Hinder R4, and the inductance L1 being coupled between rf inputs and ground terminal；
Intervalve matching circuit includes the inductance being coupled between the collector of power end and the first radio-frequency power amplifying transistor
The base stage of RFC1, the collector for being coupled to the first radio-frequency power amplifying transistor successively and the second radio-frequency power amplifying transistor it
Between capacitance C4, capacitance C5 and resistance R5, the inductance L3 being coupled between capacitance C4 and the intermediate node and ground terminal of capacitance C5,
The capacitance C3 and inductance L2 being coupled between the collector and ground terminal of the first radio-frequency power amplifying transistor；
Output matching circuit includes the inductance being coupled between the collector of power end and the second radio-frequency power amplifying transistor
RFC2, the capacitance C8 being coupled between the collector and RF output end of the second radio-frequency power amplifying transistor, are coupled to successively
Capacitance C6 and inductance L4 between the collector and ground terminal of second radio-frequency power amplifying transistor, are coupled to the second radio frequency successively
Capacitance C7 and inductance L5 between the collector and ground terminal of power amplifying transistor, be coupled to RF output end and ground terminal it
Between inductance L6；
Wherein inductance L1, inductance L2, inductance L3, inductance L4, inductance L5, inductance L6, inductance RFC1, inductance RFC2, inductance RFC3
Formed by the transmission line on substrate.
2. radio-frequency power amplifier according to claim 1, it is characterised in that inductance L1 to inductance 6, inductance RFC1- electricity
It is on-chip inductor to feel RFC2, and capacitance C1 to capacitance C8 is on-chip capacitance, and the radio-frequency power amplifier is to be formed at arsenic
On gallium chip.
3. radio-frequency power amplifier according to claim 1, it is characterised in that the first biasing circuit includes resistance R2, electricity
Hold C9, bipolar transistor T3, T4 and T5, one end of resistance R2 is connected with reference voltage end, the other end of resistance R2 with it is bipolar
The collector of transistor npn npn T5 is connected, and the base stage of bipolar transistor T5 is connected with its collector, the hair of bipolar transistor T5
Emitter-base bandgap grading is connected with the collector of bipolar transistor T4, and the base stage of bipolar transistor T4 is connected with its collector, ambipolar crystalline substance
The emitter ground connection of body pipe T4, capacitance C9 are coupled between base stage and the ground terminal of bipolar transistor T3, bipolar transistor
The base stage of T3 is connected with the collector of bipolar transistor T5, and the collector of bipolar transistor T3 is connected with reference voltage end,
The emitter of bipolar transistor T3 is coupled to the base stage of the first radio-frequency power amplifying transistor；
Second biasing circuit includes resistance R3, capacitance C10, bipolar transistor T7, T8 and T6, one end and the reference electricity of resistance R3
Pressure side is connected, and the other end of resistance R3 is connected with the collector of bipolar transistor T8, the base stage of bipolar transistor T8 and its
Collector is connected, and the emitter of bipolar transistor T8 is connected with the collector of bipolar transistor T7, bipolar transistor T7
Base stage be connected with its collector, the emitter of bipolar transistor T7 ground connection, capacitance C10 is coupled to bipolar transistor T6's
Between base stage and ground terminal, the base stage of bipolar transistor T6 is connected with the collector of bipolar transistor T8, bipolar transistor
The collector of pipe T6 is connected with reference voltage end, and the emitter of bipolar transistor T6 is coupled to the second radio-frequency power amplification crystal
The base stage of pipe,
Capacitance C9 to capacitance C10 is on-chip capacitance.
4. radio-frequency power amplifier according to claim 1, it is characterised in that capacitance C3 and inductance L2 forms second order resonance
Network, resonant frequency are twice of dominant frequency, suppress the second harmonic of dominant frequency, and capacitance C6 and inductance L4 form second order resonant network,
Its resonant frequency is twice of dominant frequency, suppresses the second harmonic of dominant frequency；Capacitance C7 and inductance L5 forms three rank resonant networks, resonance
Frequency is three times of dominant frequency, suppresses the triple-frequency harmonics of dominant frequency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810023026.6A CN107947743A (en) | 2018-01-10 | 2018-01-10 | Radio-frequency power amplifier for NB IOT technologies |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810023026.6A CN107947743A (en) | 2018-01-10 | 2018-01-10 | Radio-frequency power amplifier for NB IOT technologies |
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| Publication Number | Publication Date |
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| CN107947743A true CN107947743A (en) | 2018-04-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201810023026.6A Pending CN107947743A (en) | 2018-01-10 | 2018-01-10 | Radio-frequency power amplifier for NB IOT technologies |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2337716Y (en) * | 1998-01-12 | 1999-09-08 | 台达电子工业股份有限公司 | Oscillator |
| JP2000216641A (en) * | 1999-01-25 | 2000-08-04 | Fujitsu Ltd | Power amplifier |
| CN101166014A (en) * | 2006-10-18 | 2008-04-23 | 松下电器产业株式会社 | Power amplifier |
| CN101478290A (en) * | 2008-11-25 | 2009-07-08 | 锐迪科微电子（上海）有限公司 | Method for improving linearity of multi-stage power amplifier circuit and circuit therefor |
| US20120146742A1 (en) * | 2010-12-09 | 2012-06-14 | Rf Micro Devices, Inc. | Diplexed tx filter and rf switch with intermodulation suppression |
| CN104579189A (en) * | 2015-02-04 | 2015-04-29 | 广东工业大学 | Circuit structure for improving harmonic performance of radio frequency power amplifier |
| CN105262446A (en) * | 2015-10-23 | 2016-01-20 | 锐迪科创微电子（北京）有限公司 | Multilevel radio-frequency power amplification circuit |
| CN106603026A (en) * | 2016-12-28 | 2017-04-26 | 无锡中普微电子有限公司 | 3g radio frequency power amplifier |
| CN207691762U (en) * | 2018-01-10 | 2018-08-03 | 无锡中普微电子有限公司 | Radio-frequency power amplifier for NB-IOT technologies |
-
2018
- 2018-01-10 CN CN201810023026.6A patent/CN107947743A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2337716Y (en) * | 1998-01-12 | 1999-09-08 | 台达电子工业股份有限公司 | Oscillator |
| JP2000216641A (en) * | 1999-01-25 | 2000-08-04 | Fujitsu Ltd | Power amplifier |
| CN101166014A (en) * | 2006-10-18 | 2008-04-23 | 松下电器产业株式会社 | Power amplifier |
| CN101478290A (en) * | 2008-11-25 | 2009-07-08 | 锐迪科微电子（上海）有限公司 | Method for improving linearity of multi-stage power amplifier circuit and circuit therefor |
| US20120146742A1 (en) * | 2010-12-09 | 2012-06-14 | Rf Micro Devices, Inc. | Diplexed tx filter and rf switch with intermodulation suppression |
| CN104579189A (en) * | 2015-02-04 | 2015-04-29 | 广东工业大学 | Circuit structure for improving harmonic performance of radio frequency power amplifier |
| CN105262446A (en) * | 2015-10-23 | 2016-01-20 | 锐迪科创微电子（北京）有限公司 | Multilevel radio-frequency power amplification circuit |
| CN106603026A (en) * | 2016-12-28 | 2017-04-26 | 无锡中普微电子有限公司 | 3g radio frequency power amplifier |
| CN207691762U (en) * | 2018-01-10 | 2018-08-03 | 无锡中普微电子有限公司 | Radio-frequency power amplifier for NB-IOT technologies |
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