CN106603026A - 3g radio frequency power amplifier - Google Patents
3g radio frequency power amplifier Download PDFInfo
- Publication number
- CN106603026A CN106603026A CN201611236111.8A CN201611236111A CN106603026A CN 106603026 A CN106603026 A CN 106603026A CN 201611236111 A CN201611236111 A CN 201611236111A CN 106603026 A CN106603026 A CN 106603026A
- Authority
- CN
- China
- Prior art keywords
- amplifier tube
- biasing
- radio frequency
- wound inductor
- substrate wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims description 55
- 101001096365 Homo sapiens Replication factor C subunit 2 Proteins 0.000 claims description 11
- 102100037851 Replication factor C subunit 2 Human genes 0.000 claims description 11
- 230000006978 adaptation Effects 0.000 claims 2
- 238000005538 encapsulation Methods 0.000 abstract description 11
- 239000003990 capacitor Substances 0.000 abstract description 9
- 230000003321 amplification Effects 0.000 abstract 17
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 17
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000004806 packaging method and process Methods 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 208000019901 Anxiety disease Diseases 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 230000036506 anxiety Effects 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
- H03F3/45098—PI types
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention relates to a 3G radio frequency power amplifier module, comprising a first-stage amplification structure and a second-stage amplification structure which is connected with the first-stage amplification structure by virtue of an inter-stage matching circuit, wherein the first-stage amplification structure comprises a radio frequency amplification tube T1, an input matching circuit matching the radio frequency amplification tube T1, and an amplification tube T1 biasing circuit matching the radio frequency amplification tube T1; the second-stage amplification structure comprises a radio frequency amplification tube T2, an output matching circuit matching the radio frequency amplification tube T2, and an amplification tube T2 biasing circuit matching the radio frequency amplification tube T2; and the first-stage amplification structure is connected with the second-stage amplification structure by virtue of the inter-stage matching circuit, the input matching circuit of the first-stage amplification structure, the output matching circuit of the second-stage amplification structure, and the inter-stage matching circuit do not adopt SMD (Surface Mounted Device) inductors and capacitors, so that the encapsulation capacity can be effectively improved, the encapsulation cost can be reduced, the adaptability of encapsulation can be improved, and the 3G radio frequency power amplifier module is safe and reliable.
Description
Technical field
The present invention relates to a kind of radio-frequency power amplifier, especially a kind of 3G radio-frequency power amplifiers, specifically 3G
The power amplifier circuit of WCDMA, CDMA one-segment, belongs to the technical field of radio-frequency power amplifier.
Background technology
The modular design of existing 3G WCDMA and CDMA one-segment 3cm*3cm power amplifier modules：One GaAs
Chip provides the radio-frequency power required for power amplifier；One CMOS chip is supplied to the stable running voltage of gallium arsenide chips
Value, to ensure that the working condition of gallium arsenide transistor is not affected by the fluctuation of external voltage source；Encapsulation factory gallium arsenide chips,
CMOS chip, SMD capacitor and inductors are attached on substrate, then beating gold thread or copper cash by way of they are linked together,
They are encapsulated on a component (module) finally by plastic packaging material make last finished product.
Usually, in above-mentioned modular design, the SMD capacitor and inductors for using 0201 or 01005 are needed.SMD capacitor and inductors
Effect be radio-frequency match, capacitor filtering and radio frequency every straight：Radio-frequency match includes input matching, interstage matched and output matching；
Capacitor filtering is mainly filtered to ensure that radio-frequency power amplifier works at steady-state to the low frequency on power supply；Penetrate
Frequency capacitance ensures that radiofrequency signal can direct current can not pass through by the path.It is generally used in radio-frequency power amplifier
SMD capacitor and inductors be Japan murata production, such as run into as Earthquakes in Japan and tsunami natural disaster can affect the confession of SMD
Should be so as to causing the short supply of whole radio-frequency power amplifier module；Encapsulation factory production capacity anxiety is also frequently encountered in addition and is caused whole
The short supply of individual radio-frequency power amplifier module.
Therefore, encapsulation production capacity how is effectively improved, and reduces cost, it is that solution is badly in need of in existing power amplifier package design
Problem certainly.
The content of the invention
The purpose of the present invention is to overcome the deficiencies in the prior art, there is provided a kind of 3G radio-frequency power amplifiers, its knot
Structure is compact, can effectively improve encapsulation production capacity, reduces packaging cost, and adaptability is good, safe and reliable.
According to the technical scheme that the present invention is provided, the 3G radio-frequency power amplifier modules, including first order structure for amplifying
And the second level structure for amplifying being connected with the first order structure for amplifying by intervalve matching circuit；
First order structure for amplifying include the input matching circuits that are adapted to the radio frequency amplifier tube T1 of radio frequency amplifier tube T1 with
And the amplifier tube T1 biasing circuits being adapted to the radio frequency amplifier tube T1；
Second level structure for amplifying include the output matching circuits that are adapted to the radio frequency amplifier tube T2 of radio frequency amplifier tube T2 with
And the amplifier tube T2 biasing circuits being adapted to the radio frequency amplifier tube T2；
The input matching circuit includes the resistance R1 being connected with radio frequency amplifier tube T1 base terminals, the other end of resistance R1 with
One end connection of chip capacity C1, the other end of chip capacity C1 is grounded by substrate wire-wound inductor L1；
Intervalve matching circuit includes chip capacity C4, substrate wire-wound inductor L2, chip capacity C3 and substrate wire-wound inductor
One end of RFC1, chip capacity C4 is connected with the base terminal of radio frequency amplifier tube T2, the other end and the substrate coiling of chip capacity C4
One end of inductance L2 and one end connection of chip capacity C3, the other end ground connection of substrate wire-wound inductor L2, chip capacity C3's
The other end is connected with the collector terminal of radio frequency amplifier tube T1 and one end of substrate wire-wound inductor RFC1, substrate wire-wound inductor RFC1
The other end be connected with power supply VCC2；
Output matching circuit includes chip capacity C5, substrate wire-wound inductor RFC2 and substrate wire-wound inductor L3, chip electricity
The one end for holding C5 is connected with the collector terminal of radio frequency amplifier tube T2 and one end of substrate wire-wound inductor RFC2, substrate wire-wound inductor
The other end of RFC2 is connected with power supply VCC2, and the other end of chip capacity C5 is connected with one end of substrate wire-wound inductor L3, substrate
The other end ground connection of wire-wound inductor L3, one end that chip capacity C5 is connected with substrate wire-wound inductor L3 is formed amplifies outfan OUT.
The amplifier tube T1 biasing circuits include biasing amplifier tube T3, biasing amplifier tube T4 and biasing amplifier tube T5, partially
Put the emitter stage of amplifier tube T3 be connected with the other end of resistance R1, one end of electric capacity C1 and resistance R4 one end connection, resistance
The other end of R4 is connected with one end of electric capacity C2, and the other end of electric capacity C2 is connected with the colelctor electrode of radio frequency amplifier tube T1；
The collector terminal of biasing amplifier tube T3 is connected with voltage Vreg, biases the base terminal of amplifier tube T3 and the one of electric capacity C6
One end connection of end, the collector terminal of biasing amplifier tube T5, the base terminal of biasing amplifier tube T5 and resistance R2, electric capacity C6's is another
One end is grounded after being connected with the emitter terminal of biasing amplifier tube T4, biases the base terminal of amplifier tube T4 and the collection of biasing amplifier tube T4
The emitter terminal connection of electrode tip and biasing amplifier tube T5, the other end of resistance R2 is connected with voltage Vreg.
The amplifier tube T2 biasing circuits include biasing amplifier tube T6, biasing amplifier tube T7 and biasing amplifier tube T8, partially
The emitter terminal for putting amplifier tube T6 is connected with the base terminal of radio frequency amplifier tube T2, biases the base terminal of amplifier tube T6 with electric capacity C7's
One end connection of one end, the base terminal of biasing amplifier tube T8, the collector terminal of biasing amplifier tube T8 and resistance R3, resistance R3's
The colelctor electrode Duan Junyu voltages Vreg connections of the other end and biasing amplifier tube T6,
The other end of electric capacity C7 is grounded after being connected with the emitter terminal of biasing amplifier tube T7, biases the base terminal of amplifier tube T7
It is connected with the collector terminal of biasing amplifier tube T7 and the emitter terminal of biasing amplifier tube T8.
Advantages of the present invention：First order structure for amplifying is connected by intervalve matching circuit with second level structure for amplifying, and first
The level input matching circuit of structure for amplifying, the output matching circuit of second level structure for amplifying and the intervalve matching circuit are not
Using SMD electric capacity and SMD inductance, encapsulation production capacity can be effectively improved, reduce packaging cost, improve the adaptability of encapsulation, safety
It is reliable.
Description of the drawings
Fig. 1 is the circuit theory diagrams of the present invention.
Specific embodiment
With reference to concrete drawings and Examples, the invention will be further described.
As shown in Figure 1：In order to be able to effectively improve encapsulation production capacity, packaging cost is reduced, the present invention includes that the first order amplifies knot
Structure and the second level structure for amplifying being connected with the first order structure for amplifying by intervalve matching circuit；
First order structure for amplifying include the input matching circuits that are adapted to the radio frequency amplifier tube T1 of radio frequency amplifier tube T1 with
And the amplifier tube T1 biasing circuits being adapted to the radio frequency amplifier tube T1；
Second level structure for amplifying include the output matching circuits that are adapted to the radio frequency amplifier tube T2 of radio frequency amplifier tube T2 with
And the amplifier tube T2 biasing circuits being adapted to the radio frequency amplifier tube T2；
The input matching circuit includes the resistance R1 being connected with radio frequency amplifier tube T1 base terminals, the other end of resistance R1 with
One end connection of chip capacity C1, the other end of chip capacity C1 is grounded by substrate wire-wound inductor L1；
Intervalve matching circuit includes chip capacity C4, substrate wire-wound inductor L2, chip capacity C3 and substrate wire-wound inductor
One end of RFC1, chip capacity C4 is connected with the base terminal of radio frequency amplifier tube T2, the other end and the substrate coiling of chip capacity C4
One end of inductance L2 and one end connection of chip capacity C3, the other end ground connection of substrate wire-wound inductor L2, chip capacity C3's
The other end is connected with the collector terminal of radio frequency amplifier tube T1 and one end of substrate wire-wound inductor RFC1, substrate wire-wound inductor RFC1
The other end be connected with power supply VCC2；
Output matching circuit includes chip capacity C5, substrate wire-wound inductor RFC2 and substrate wire-wound inductor L3, chip electricity
The one end for holding C5 is connected with the collector terminal of radio frequency amplifier tube T2 and one end of substrate wire-wound inductor RFC2, substrate wire-wound inductor
The other end of RFC2 is connected with power supply VCC2, and the other end of chip capacity C5 is connected with one end of substrate wire-wound inductor L3, substrate
The other end ground connection of wire-wound inductor L3, one end that chip capacity C5 is connected with substrate wire-wound inductor L3 is formed amplifies outfan OUT.
Specifically, one end that chip capacity C1 is connected with substrate wire-wound inductor L1 also forms input IN, resistance R1, chip
Electric capacity C1 and substrate wire-wound inductor L1 composition input matching circuits, compare it is existing need using SMD electric capacity and SMD inductance
With form, the present invention is coordinated using chip capacity C1 and substrate wire-wound inductor L1 and resistance R1, can equally realize input matching
Purpose, when SMD electric capacity and SMD inductance is not adopted, packaging cost can be reduced.When being embodied as, chip is obtained and used
The process of electric capacity and substrate wire-wound inductor is that here is omitted known to those skilled in the art.
Further, chip capacity C3, chip capacity C4, substrate wire-wound inductor L2 and substrate wire-wound inductor RFC1 composition
Intervalve matching circuit, compares the interstage matched form that existing employing one-level matching and the outer SMD filter capacitors of piece are realized, present invention profit
Interstage matched can be equally realized with chip capacity C3, chip capacity C4, substrate wire-wound inductor L2 and substrate wire-wound inductor RFC1
Purpose, when SMD electric capacity is not adopted, packaging cost can be reduced.
Additionally, chip capacity C5, substrate wire-wound inductor L3 and substrate wire-wound inductor RFC2 composition output matching circuits, profit
With chip capacity C5 direct current can also be realized every straight effect.Compare the existing output for needing and being formed using SMD electric capacity and SMD inductance
Matched form, the present invention equally can be realized using chip capacity C5, substrate wire-wound inductor L3 and substrate wire-wound inductor RFC2
Output matching purpose, when SMD capacitor and inductors are not adopted, can effectively reduce packaging cost, improve encapsulation production capacity.
Further, the amplifier tube T1 biasing circuits include that biasing amplifier tube T3, biasing amplifier tube T4 and biasing are put
Big pipe T5, bias amplifier tube T3 emitter stage be connected with the other end of resistance R1, one end of electric capacity C1 and resistance R4 one end
Connection, the other end of resistance R4 is connected with one end of electric capacity C2, and the other end of electric capacity C2 connects with the colelctor electrode of radio frequency amplifier tube T1
Connect；
The collector terminal of biasing amplifier tube T3 is connected with voltage Vreg, biases the base terminal of amplifier tube T3 and the one of electric capacity C6
One end connection of end, the collector terminal of biasing amplifier tube T5, the base terminal of biasing amplifier tube T5 and resistance R2, electric capacity C6's is another
One end is grounded after being connected with the emitter terminal of biasing amplifier tube T4, biases the base terminal of amplifier tube T4 and the collection of biasing amplifier tube T4
The emitter terminal connection of electrode tip and biasing amplifier tube T5, the other end of resistance R2 is connected with voltage Vreg.
In the embodiment of the present invention, resistance R4 and electric capacity C2 composition feedback circuits.Biasing amplifier tube T3, biasing amplifier tube T4
And biasing amplifier tube T5 can adopt NPN triode, it is of course also possible to use the amplifier tube of other forms, specifically can be with root
According to needing to be selected, it is selected specifically to known to those skilled in the art, here is omitted.
The amplifier tube T2 biasing circuits include biasing amplifier tube T6, biasing amplifier tube T7 and biasing amplifier tube T8, partially
The emitter terminal for putting amplifier tube T6 is connected with the base terminal of radio frequency amplifier tube T2, biases the base terminal of amplifier tube T6 with electric capacity C7's
One end connection of one end, the base terminal of biasing amplifier tube T8, the collector terminal of biasing amplifier tube T8 and resistance R3, resistance R3's
The colelctor electrode Duan Junyu voltages Vreg connections of the other end and biasing amplifier tube T6,
The other end of electric capacity C7 is grounded after being connected with the emitter terminal of biasing amplifier tube T7, biases the base terminal of amplifier tube T7
It is connected with the collector terminal of biasing amplifier tube T7 and the emitter terminal of biasing amplifier tube T8.
In the embodiment of the present invention, biasing amplifier tube T6, biasing amplifier tube T7 and biasing amplifier tube T8 can adopt NPN tri-
Pole pipe, it is of course also possible to use the amplifier tube of form, particular type can be selected as needed, specially this technology neck
Known to the personnel of domain, here is omitted.
Claims (3)
1. a kind of 3G radio-frequency power amplifiers, is characterized in that：Including first order structure for amplifying and by intervalve matching circuit with
The second level structure for amplifying of the first order structure for amplifying connection；
First order structure for amplifying include the input matching circuits that are adapted to the radio frequency amplifier tube T1 of radio frequency amplifier tube T1 and with
The amplifier tube T1 biasing circuits of the radio frequency amplifier tube T1 adaptations；
Second level structure for amplifying include the output matching circuits that are adapted to the radio frequency amplifier tube T2 of radio frequency amplifier tube T2 and with
The amplifier tube T2 biasing circuits of the radio frequency amplifier tube T2 adaptations；
The input matching circuit includes the resistance R1 being connected with radio frequency amplifier tube T1 base terminals, the other end and chip of resistance R1
One end connection of electric capacity C1, the other end of chip capacity C1 is grounded by substrate wire-wound inductor L1；
Intervalve matching circuit includes chip capacity C4, substrate wire-wound inductor L2, chip capacity C3 and substrate wire-wound inductor RFC1,
One end of chip capacity C4 is connected with the base terminal of radio frequency amplifier tube T2, the other end and the substrate wire-wound inductor L2 of chip capacity C4
One end and chip capacity C3 one end connection, substrate wire-wound inductor L2 the other end ground connection, the other end of chip capacity C3
It is connected with the collector terminal of radio frequency amplifier tube T1 and one end of substrate wire-wound inductor RFC1, substrate wire-wound inductor RFC1's is another
End is connected with power supply VCC2；
Output matching circuit includes chip capacity C5, substrate wire-wound inductor RFC2 and substrate wire-wound inductor L3, chip capacity C5
One end be connected with the collector terminal of radio frequency amplifier tube T2 and one end of substrate wire-wound inductor RFC2, substrate wire-wound inductor RFC2
The other end be connected with power supply VCC2, the other end of chip capacity C5 is connected with one end of substrate wire-wound inductor L3, substrate coiling
The other end ground connection of inductance L3, one end that chip capacity C5 is connected with substrate wire-wound inductor L3 is formed amplifies outfan OUT.
2. 3G radio-frequency power amplifiers according to claim 1, is characterized in that：The amplifier tube T1 biasing circuits include inclined
Put amplifier tube T3, biasing amplifier tube T4 and biasing amplifier tube T5, bias emitter stage and the resistance R1 of amplifier tube T3 the other end,
One end connection of electric capacity C1 and one end connection of resistance R4, the other end of resistance R4 is connected with one end of electric capacity C2, electric capacity C2
The other end be connected with the colelctor electrode of radio frequency amplifier tube T1；
Biasing amplifier tube T3 collector terminal be connected with voltage Vreg, biasing amplifier tube T3 base terminal and electric capacity C6 one end,
One end connection of the collector terminal, the base terminal of biasing amplifier tube T5 and resistance R2 of biasing amplifier tube T5, electric capacity C6's is another
Hold and be grounded after being connected with the emitter terminal of biasing amplifier tube T4, bias the base terminal of amplifier tube T4 and the current collection of biasing amplifier tube T4
Extreme and biasing amplifier tube T5 emitter terminal connection, the other end of resistance R2 is connected with voltage Vreg.
3. 3G radio-frequency power amplifiers according to claim 1, is characterized in that：The amplifier tube T2 biasing circuits include inclined
Amplifier tube T6, biasing amplifier tube T7 and biasing amplifier tube T8 are put, the emitter terminal and radio frequency amplifier tube T2 of amplifier tube T6 is biased
Base terminal connection, bias one end of base terminal and the electric capacity C7 of amplifier tube T6, the base terminal of biasing amplifier tube T8, biasing and amplify
The collector terminal of pipe T8 and one end connection of resistance R3, the other end of resistance R3 and the colelctor electrode Duan Jun of biasing amplifier tube T6
It is connected with voltage Vreg, the other end of electric capacity C7 is grounded after being connected with the emitter terminal of biasing amplifier tube T7, biases amplifier tube T7
Base terminal with biasing amplifier tube T7 collector terminal and biasing amplifier tube T8 emitter terminal be connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611236111.8A CN106603026A (en) | 2016-12-28 | 2016-12-28 | 3g radio frequency power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611236111.8A CN106603026A (en) | 2016-12-28 | 2016-12-28 | 3g radio frequency power amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106603026A true CN106603026A (en) | 2017-04-26 |
Family
ID=58604833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611236111.8A Withdrawn CN106603026A (en) | 2016-12-28 | 2016-12-28 | 3g radio frequency power amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106603026A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107947743A (en) * | 2018-01-10 | 2018-04-20 | 无锡中普微电子有限公司 | Radio-frequency power amplifier for NB IOT technologies |
| CN107994876A (en) * | 2018-01-10 | 2018-05-04 | 无锡中普微电子有限公司 | Radio-frequency power amplifier for WI-FI modules |
-
2016
- 2016-12-28 CN CN201611236111.8A patent/CN106603026A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107947743A (en) * | 2018-01-10 | 2018-04-20 | 无锡中普微电子有限公司 | Radio-frequency power amplifier for NB IOT technologies |
| CN107994876A (en) * | 2018-01-10 | 2018-05-04 | 无锡中普微电子有限公司 | Radio-frequency power amplifier for WI-FI modules |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108111135B (en) | Power amplification circuit | |
| JP2014022858A (en) | Power amplifier | |
| US7692493B1 (en) | High-efficiency single to differential amplifier | |
| CN100488034C (en) | CMOS self-adaptive biasing circuit | |
| Chen et al. | A 0.1–20 GHz low-power self-biased resistive-feedback LNA in 90 nm digital CMOS | |
| CN101944883A (en) | Low-noise amplifier | |
| JP2008103874A5 (en) | ||
| US20150070096A1 (en) | Power amplifier | |
| CN207869070U (en) | Active biased darlington structure amplifier | |
| TW200934101A (en) | Negative-feedback type ultra-wideband signal amplification circuit | |
| EP2148433A4 (en) | Wide-range low-noise amplifier | |
| CN106603026A (en) | 3g radio frequency power amplifier | |
| CN103124163B (en) | Power amplifier | |
| CN103248325A (en) | Power amplifier | |
| Murad et al. | High gain 2.4 GHz CMOS low noise amplifier for wireless sensor network applications | |
| US20210203288A1 (en) | Power amplifying module | |
| CN102790591A (en) | High frequency power amplifier | |
| CN206850727U (en) | 3G radio-frequency power amplifiers | |
| CN207691762U (en) | Radio-frequency power amplifier for NB-IOT technologies | |
| CN206422750U (en) | 3G RF power amplifier circuit modules | |
| CN206349976U (en) | 3G radio-frequency power amplifier modules | |
| CN206850728U (en) | 3G RF power amplifier circuits | |
| CN107994876A (en) | Radio-frequency power amplifier for WI-FI modules | |
| CN106656074A (en) | 3g radio frequency power amplifier circuit | |
| CN106505956A (en) | 3G RF power amplifier circuit modules |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20170426 |
|
| WW01 | Invention patent application withdrawn after publication |