CN206349976U - 3G radio-frequency power amplifier modules - Google Patents
3G radio-frequency power amplifier modules Download PDFInfo
- Publication number
- CN206349976U CN206349976U CN201621462604.9U CN201621462604U CN206349976U CN 206349976 U CN206349976 U CN 206349976U CN 201621462604 U CN201621462604 U CN 201621462604U CN 206349976 U CN206349976 U CN 206349976U
- Authority
- CN
- China
- Prior art keywords
- amplifier tube
- biasing
- radio frequency
- wound inductor
- amplifying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Amplifiers (AREA)
Abstract
The utility model is related to a kind of 3G radio-frequency power amplifier modules, and it includes first order structure for amplifying and the second level structure for amplifying being connected by intervalve matching circuit with the first order structure for amplifying；The amplifier tube T1 biasing circuits that first order structure for amplifying includes radio frequency amplifier tube T1, is adapted to the radio frequency amplifier tube T1 input matching circuits being adapted to and with the radio frequency amplifier tube T1；The amplifier tube T2 biasing circuits that second level structure for amplifying includes radio frequency amplifier tube T2, is adapted to the radio frequency amplifier tube T2 output matching circuits being adapted to and with the radio frequency amplifier tube T2；First order structure for amplifying is connected by intervalve matching circuit with second level structure for amplifying, input matching circuit, the output matching circuit of second level structure for amplifying and the intervalve matching circuit of first order structure for amplifying do not use SMD electric capacity and SMD inductance, encapsulation production capacity can be effectively improved, reduce packaging cost, the adaptability of encapsulation is improved, it is safe and reliable.
Description
Technical field
The utility model is related to a kind of amplifier module, especially a kind of 3G radio-frequency power amplifier modules, specifically
It is the power amplifier module of 3G WCDMA, CDMA one-segments, belongs to the technical field of radio-frequency power amplifier.
Background technology
The modular design of existing 3G WCDMA and CDMA one-segment 3cm*3cm power amplifier modules：One GaAs
Chip provides the radio-frequency power required for power amplifier；One CMOS chip is supplied to the stable operating voltage of gallium arsenide chips
Value, is not influenceed with the working condition for ensureing gallium arsenide transistor by the fluctuation of external voltage source；Encapsulate factory gallium arsenide chips,
CMOS chip, SMD capacitor and inductors are attached on substrate, and then they are linked together by way of beating gold thread or copper cash,
They are encapsulated on a component (module) finally by plastic packaging material and makes last finished product.
Usually, it is necessary to use 0201 or 01005 SMD capacitor and inductors in above-mentioned modular design.SMD capacitor and inductors
Effect be radio-frequency match, capacitor filtering and radio frequency blocking：Radio-frequency match includes input matching, interstage matched and output matching；
Capacitor filtering is mainly filtered to ensure radio-frequency power amplifier work at steady-state to the low frequency on power supply；Penetrate
Frequency capacitance ensures that radiofrequency signal can direct current can not pass through by the path.It is used in usual radio-frequency power amplifier
SMD capacitor and inductors be Japan murata productions, such as run into as Earthquakes in Japan and tsunami natural calamity can influence SMD confession
Should be so as to causing the short supply of whole radio-frequency power amplifier module；Encapsulation factory production capacity anxiety is also frequently encountered in addition and is caused whole
The short supply of individual radio-frequency power amplifier module.
Therefore, encapsulation production capacity how is effectively improved, and reduces cost, is that solution is badly in need of in existing power amplifier package design
Certainly the problem of.
The content of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art there is provided a kind of 3G radio-frequency power amplifiers mould
Block, its compact conformation can effectively improve encapsulation production capacity, reduce packaging cost, and adaptability is good, safe and reliable.
The technical scheme provided according to the utility model, the 3G radio-frequency power amplifier modules, including it is defeated for receiving
Enter the first order structure for amplifying of signal and the second level structure for amplifying for amplified signal to be exported, first order structure for amplifying
It is connected by intervalve matching circuit with second level structure for amplifying；
First order structure for amplifying include radio frequency amplifier tube T1, the input matching circuit that is adapted to the radio frequency amplifier tube T1 with
And the amplifier tube T1 biasing circuits being adapted to the radio frequency amplifier tube T1；
Second level structure for amplifying include radio frequency amplifier tube T2, the output matching circuit that is adapted to the radio frequency amplifier tube T2 with
And the amplifier tube T2 biasing circuits being adapted to the radio frequency amplifier tube T2；
The input matching circuit includes the resistance R1 that be connected with radio frequency amplifier tube T1 base terminals, the resistance R1 other end and
Chip capacity C1 one end connection, the chip capacity C1 other end is grounded by substrate wire-wound inductor L1, and chip capacity C1
The other end and substrate wire-wound inductor L1 one end form input IN after being connected with each other；
Intervalve matching circuit includes chip capacity C4, substrate wire-wound inductor L2, chip capacity C3 and substrate wire-wound inductor
RFC1, chip capacity C4 one end are connected with radio frequency amplifier tube T2 base terminal, chip capacity the C4 other end and substrate coiling
Inductance L2 one end and chip capacity C3 one end connection, substrate wire-wound inductor L2 other end ground connection, chip capacity C3's
The other end is connected with radio frequency amplifier tube T1 collector terminal and substrate wire-wound inductor RFC1 one end, substrate wire-wound inductor RFC1
The other end be connected with power supply VCC2；
Output matching circuit includes chip capacity C5, chip capacity C8, substrate wire-wound inductor RFC2 and substrate coiling electricity
Feel L3, radio frequency amplifier tube T2 collector terminal is connected with substrate wire-wound inductor RFC2 one end, substrate wire-wound inductor L3 one end,
The substrate wire-wound inductor RFC2 other end is connected with power supply VCC2, the substrate wire-wound inductor L3 other end and the one of chip capacity C8
End and the connection of chip capacity C5 one end, chip capacity C8 other end ground connection, chip capacity C5 other end formation amplification
Output end OUT.
The amplifier tube T1 biasing circuits include biasing amplifier tube T3, biasing amplifier tube T4 and biasing amplifier tube T5, partially
Putting amplifier tube T3 emitter stage, and the resistance R1 other end, electric capacity C1 one end are connected and resistance R4 one end is connected, resistance
The R4 other end is connected with electric capacity C2 one end, and the electric capacity C2 other end is connected with radio frequency amplifier tube T1 colelctor electrode；
Biasing amplifier tube T3 collector terminal is connected with voltage Vreg, biasing amplifier tube T3 base terminal and the one of electric capacity C6
Amplifier tube T5 collector terminal, biasing amplifier tube T5 base terminal and resistance R2 one end connection are held, bias, electric capacity C6's is another
One end is grounded with biasing after amplifier tube T4 emitter terminal is connected, the collection of biasing amplifier tube T4 base terminal and biasing amplifier tube T4
The emitter terminal connection of electrode tip and biasing amplifier tube T5, the resistance R2 other end is connected with voltage Vreg.
The amplifier tube T2 biasing circuits include biasing amplifier tube T6, biasing amplifier tube T7 and biasing amplifier tube T8, partially
The emitter terminal for putting amplifier tube T6 is connected with radio frequency amplifier tube T2 base terminal, and biasing amplifier tube T6 base terminal is with electric capacity C7's
One end, biasing amplifier tube T8 base terminal, biasing amplifier tube T8 collector terminal and resistance R3 one end connection, resistance R3's
The colelctor electrode Duan Junyu voltages Vreg connections of the other end and biasing amplifier tube T6, electric capacity the C7 other end and biasing amplifier tube T7
Emitter terminal connection after be grounded, biasing amplifier tube T7 base terminal and biasing amplifier tube T7 collector terminal and biasing are amplified
Pipe T8 emitter terminal connection.
Advantage of the present utility model：First order structure for amplifying is connected by intervalve matching circuit with second level structure for amplifying,
Input matching circuit, the output matching circuit of second level structure for amplifying and the intervalve matching circuit of first order structure for amplifying
Do not use SMD electric capacity and SMD inductance, encapsulation production capacity can be effectively improved, reduce packaging cost, improve the adaptability of encapsulation,
It is safe and reliable.
Brief description of the drawings
Fig. 1 is circuit theory diagrams of the present utility model.
Embodiment
With reference to specific drawings and examples, the utility model is described in further detail.
As shown in Figure 1：In order to be able to effectively improve encapsulation production capacity, packaging cost is reduced, the utility model includes being used to receive
The first order structure for amplifying of input signal and the second level structure for amplifying for amplified signal to be exported, first order amplification knot
Structure is connected by intervalve matching circuit with second level structure for amplifying；
First order structure for amplifying include radio frequency amplifier tube T1, the input matching circuit that is adapted to the radio frequency amplifier tube T1 with
And the amplifier tube T1 biasing circuits being adapted to the radio frequency amplifier tube T1；
Second level structure for amplifying include radio frequency amplifier tube T2, the output matching circuit that is adapted to the radio frequency amplifier tube T2 with
And the amplifier tube T2 biasing circuits being adapted to the radio frequency amplifier tube T2；
The input matching circuit includes the resistance R1 that be connected with radio frequency amplifier tube T1 base terminals, the resistance R1 other end and
Chip capacity C1 one end connection, the chip capacity C1 other end is grounded by substrate wire-wound inductor L1, and chip capacity C1
The other end and substrate wire-wound inductor L1 one end form input IN after being connected with each other；
Intervalve matching circuit includes chip capacity C4, substrate wire-wound inductor L2, chip capacity C3 and substrate wire-wound inductor
RFC1, chip capacity C4 one end are connected with radio frequency amplifier tube T2 base terminal, chip capacity the C4 other end and substrate coiling
Inductance L2 one end and chip capacity C3 one end connection, substrate wire-wound inductor L2 other end ground connection, chip capacity C3's
The other end is connected with radio frequency amplifier tube T1 collector terminal and substrate wire-wound inductor RFC1 one end, substrate wire-wound inductor RFC1
The other end be connected with power supply VCC2；
Output matching circuit includes chip capacity C5, chip capacity C8, substrate wire-wound inductor RFC2 and substrate coiling electricity
Feel L3, radio frequency amplifier tube T2 collector terminal is connected with substrate wire-wound inductor RFC2 one end, substrate wire-wound inductor L3 one end,
The substrate wire-wound inductor RFC2 other end is connected with power supply VCC2, the substrate wire-wound inductor L3 other end and the one of chip capacity C8
End and the connection of chip capacity C5 one end, chip capacity C8 other end ground connection, chip capacity C5 other end formation amplification
Output end OUT.
Specifically, resistance R1, chip capacity C1 and substrate wire-wound inductor L1 composition input matching circuits, compared to existing need
Will using SMD electric capacity and SMD inductance matched form, the utility model using chip capacity C1 and substrate wire-wound inductor L1 with
Resistance R1 coordinates, same to realize the purpose of input matching, when not using SMD capacitor and inductors, can reduce packaging cost.Tool
When body is implemented, obtain and use the process of chip capacity and substrate wire-wound inductor known to those skilled in the art, herein
Repeat no more.
Further, chip capacity C3, chip capacity C4, substrate wire-wound inductor L2 and substrate wire-wound inductor RFC1 compositions
Intervalve matching circuit, the interstage matched form realized with SMD filter capacitors outside piece is matched compared to existing use one-level, and this practicality is new
Type can be equally realized using chip capacity C3, chip capacity C4, substrate wire-wound inductor L2 and substrate wire-wound inductor RFC1 between level
The purpose of matching, when not using SMD electric capacity, can reduce packaging cost.
In addition, chip capacity C5, chip capacity C8, substrate wire-wound inductor L3 and substrate wire-wound inductor RFC2 composition outputs
Match circuit, can realize that chip is matched using chip capacity C8, the effect of direct current blocking can also be realized using chip capacity C5.Phase
Than the existing output matching form needed using SMD electric capacity and inductance formation, the utility model utilizes chip capacity C5, chip electricity
Output matching purpose can equally be realized by holding C8, substrate wire-wound inductor L3 and substrate wire-wound inductor RFC2, not use SMD electricity
When appearance and SMD inductance, packaging cost can be effectively reduced, encapsulation production capacity is improved.
Further, the amplifier tube T1 biasing circuits include biasing amplifier tube T3, biasing amplifier tube T4 and biased to put
Big pipe T5, biasing amplifier tube T3 emitter stage be connected with the resistance R1 other end, electric capacity C1 one end and resistance R4 one end
Connection, the resistance R4 other end is connected with electric capacity C2 one end, and the electric capacity C2 other end connects with radio frequency amplifier tube T1 colelctor electrode
Connect；
Biasing amplifier tube T3 collector terminal is connected with voltage Vreg, biasing amplifier tube T3 base terminal and the one of electric capacity C6
Amplifier tube T5 collector terminal, biasing amplifier tube T5 base terminal and resistance R2 one end connection are held, bias, electric capacity C6's is another
One end is grounded with biasing after amplifier tube T4 emitter terminal is connected, the collection of biasing amplifier tube T4 base terminal and biasing amplifier tube T4
The emitter terminal connection of electrode tip and biasing amplifier tube T5, the resistance R2 other end is connected with voltage Vreg.
In the utility model embodiment, resistance R4 and electric capacity C2 composition feedback circuits.Bias amplifier tube T3, biasing amplification
Pipe T4 and biasing amplifier tube T5 can use NPN triode, it is of course also possible to use the amplifier tube of other forms, specifically may be used
Selected, be selected specifically to known to those skilled in the art, here is omitted with as needed.
The amplifier tube T2 biasing circuits include biasing amplifier tube T6, biasing amplifier tube T7 and biasing amplifier tube T8, partially
The emitter terminal for putting amplifier tube T6 is connected with radio frequency amplifier tube T2 base terminal, and biasing amplifier tube T6 base terminal is with electric capacity C7's
One end, biasing amplifier tube T8 base terminal, biasing amplifier tube T8 collector terminal and resistance R3 one end connection, resistance R3's
The colelctor electrode Duan Junyu voltages Vreg connections of the other end and biasing amplifier tube T6, electric capacity the C7 other end and biasing amplifier tube T7
Emitter terminal connection after be grounded, biasing amplifier tube T7 base terminal and biasing amplifier tube T7 collector terminal and biasing are amplified
Pipe T8 emitter terminal connection.
In the utility model embodiment, biasing amplifier tube T6, biasing amplifier tube T7 and biasing amplifier tube T8 can be used
NPN triode, it is of course also possible to use the amplifier tube of form, particular type can be selected as needed, it is specially this skill
Known to the personnel of art field, here is omitted.
Claims (3)
1. a kind of 3G radio-frequency power amplifier modules, it is characterized in that：Including the first order structure for amplifying for receiving input signal
And the second level structure for amplifying for amplified signal to be exported, first order structure for amplifying passes through intervalve matching circuit and second
Level structure for amplifying connection；
First order structure for amplifying include radio frequency amplifier tube T1, with the radio frequency amplifier tube T1 input matching circuits being adapted to and with
The amplifier tube T1 biasing circuits of the radio frequency amplifier tube T1 adaptations；
Second level structure for amplifying include radio frequency amplifier tube T2, with the radio frequency amplifier tube T2 output matching circuits being adapted to and with
The amplifier tube T2 biasing circuits of the radio frequency amplifier tube T2 adaptations；
The input matching circuit includes the resistance R1 being connected with radio frequency amplifier tube T1 base terminals, resistance the R1 other end and chip
Electric capacity C1 one end connection, the chip capacity C1 other end is grounded by substrate wire-wound inductor L1, and chip capacity C1's is another
End and substrate wire-wound inductor L1 one end form input IN after being connected with each other；
Intervalve matching circuit includes chip capacity C4, substrate wire-wound inductor L2, chip capacity C3 and substrate wire-wound inductor RFC1,
Chip capacity C4 one end is connected with radio frequency amplifier tube T2 base terminal, chip capacity the C4 other end and substrate wire-wound inductor L2
One end and chip capacity C3 one end connection, substrate wire-wound inductor L2 the other end ground connection, the chip capacity C3 other end
It is connected with radio frequency amplifier tube T1 collector terminal and substrate wire-wound inductor RFC1 one end, substrate wire-wound inductor RFC1's is another
End is connected with power supply VCC2；
Output matching circuit includes chip capacity C5, chip capacity C8, substrate wire-wound inductor RFC2 and substrate wire-wound inductor L3,
Radio frequency amplifier tube T2 collector terminal is connected with substrate wire-wound inductor RFC2 one end, substrate wire-wound inductor L3 one end, substrate
The wire-wound inductor RFC2 other end is connected with power supply VCC2, the substrate wire-wound inductor L3 other end and chip capacity C8 one end with
And chip capacity C5 one end connection, chip capacity C8 other end ground connection, chip capacity C5 other end formation amplification output
Hold OUT.
2. 3G radio-frequency power amplifier modules according to claim 1, it is characterized in that：The amplifier tube T1 biasing circuit bags
Include biasing amplifier tube T3, biasing amplifier tube T4 and biasing amplifier tube T5, biasing amplifier tube T3 emitter stage is another with resistance R1's
One end, electric capacity C1 one end connection and resistance R4 one end connection, the resistance R4 other end are connected with electric capacity C2 one end, electricity
The other end for holding C2 is connected with radio frequency amplifier tube T1 colelctor electrode；
Biasing amplifier tube T3 collector terminal be connected with voltage Vreg, bias amplifier tube T3 base terminal and electric capacity C6 one end,
Amplifier tube T5 collector terminal, biasing amplifier tube T5 base terminal and resistance R2 one end connection are biased, electric capacity C6's is another
Hold and be grounded with biasing after amplifier tube T4 emitter terminal is connected, the current collection of biasing amplifier tube T4 base terminal and biasing amplifier tube T4
Extreme and biasing amplifier tube T5 emitter terminal connection, the resistance R2 other end is connected with voltage Vreg.
3. 3G radio-frequency power amplifier modules according to claim 1, it is characterized in that：The amplifier tube T2 biasing circuit bags
Biasing amplifier tube T6, biasing amplifier tube T7 and biasing amplifier tube T8 are included, biasing amplifier tube T6 emitter terminal and radio frequency amplify
Pipe T2 base terminal connection, biasing amplifier tube T6 base terminal and electric capacity C7 one end, biasing amplifier tube T8 base terminal, biasing
Amplifier tube T8 collector terminal and resistance R3 one end connection, the resistance R3 other end and biasing amplifier tube T6 colelctor electrode
Duan Junyu voltages Vreg connections, the electric capacity C7 other end is grounded with biasing after amplifier tube T7 emitter terminal is connected, biasing amplification
Pipe T7 base terminal is connected with biasing amplifier tube T7 collector terminal and biasing amplifier tube T8 emitter terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621462604.9U CN206349976U (en) | 2016-12-28 | 2016-12-28 | 3G radio-frequency power amplifier modules |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621462604.9U CN206349976U (en) | 2016-12-28 | 2016-12-28 | 3G radio-frequency power amplifier modules |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206349976U true CN206349976U (en) | 2017-07-21 |
Family
ID=59319989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621462604.9U Active CN206349976U (en) | 2016-12-28 | 2016-12-28 | 3G radio-frequency power amplifier modules |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206349976U (en) |
-
2016
- 2016-12-28 CN CN201621462604.9U patent/CN206349976U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108111135B (en) | Power amplification circuit | |
| JP2014022858A (en) | Power amplifier | |
| CN106817096B (en) | Power amplifier device | |
| CN100488034C (en) | CMOS self-adaptive biasing circuit | |
| CN106208980B (en) | A kind of radio-frequency power amplifier biasing circuit and its implementation | |
| CN1983802A (en) | RF amplifier circuit and operation method thereof | |
| CN207869070U (en) | Active biased darlington structure amplifier | |
| CN101542897A (en) | High frequency amplifier | |
| CN206775475U (en) | Biasing circuit | |
| CN105743450A (en) | Radio frequency power amplifier | |
| CN101826847A (en) | High-efficiency single to differential amplifier | |
| CN103248325B (en) | Power amplifier | |
| CN106603026A (en) | 3g radio frequency power amplifier | |
| CN206349976U (en) | 3G radio-frequency power amplifier modules | |
| Murad et al. | High gain 2.4 GHz CMOS low noise amplifier for wireless sensor network applications | |
| JP2014072696A (en) | Electronic circuit | |
| CN207691763U (en) | Radio-frequency power amplifier for WI-FI modules | |
| CN102064776B (en) | Power amplifier | |
| CN206422750U (en) | 3G RF power amplifier circuit modules | |
| CN206850728U (en) | 3G RF power amplifier circuits | |
| CN206850727U (en) | 3G radio-frequency power amplifiers | |
| US20210203288A1 (en) | Power amplifying module | |
| CN101297477B (en) | Transconductance device | |
| CN106788287A (en) | 3G radio-frequency power amplifier modules | |
| CN105811892B (en) | A kind of double bias supplying circuits of mobile terminal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant |