CN206850728U - 3G RF power amplifier circuits - Google Patents
3G RF power amplifier circuits Download PDFInfo
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- CN206850728U CN206850728U CN201621462605.3U CN201621462605U CN206850728U CN 206850728 U CN206850728 U CN 206850728U CN 201621462605 U CN201621462605 U CN 201621462605U CN 206850728 U CN206850728 U CN 206850728U
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- amplifier tube
- biasing
- radio frequency
- amplifying
- wound inductor
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Abstract
A kind of 3G RF power amplifier circuits are the utility model is related to, it includes first order structure for amplifying and the second level structure for amplifying being connected by intervalve matching circuit with the first order structure for amplifying；First order structure for amplifying include radio frequency amplifier tube T1, with the radio frequency amplifier tube T1 input matching circuits being adapted to and the amplifier tube T1 biasing circuits being adapted to the radio frequency amplifier tube T1；Second level structure for amplifying include radio frequency amplifier tube T2, with the radio frequency amplifier tube T2 output matching circuits being adapted to and the amplifier tube T2 biasing circuits being adapted to the radio frequency amplifier tube T2；First order structure for amplifying is connected by intervalve matching circuit with second level structure for amplifying, the input matching circuit of first order structure for amplifying, the output matching circuit of second level structure for amplifying and the intervalve matching circuit do not use SMD electric capacity and SMD inductance, encapsulation production capacity can be effectively improved, reduce packaging cost, the adaptability of encapsulation is improved, securely and reliably.
Description
Technical field
A kind of circuit is the utility model is related to, especially a kind of 3G RF power amplifier circuits, specifically 3G
The power amplifier circuit of WCDMA, CDMA one-segment, belong to the technical field of radio-frequency power amplifier.
Background technology
The modular design of existing 3G WCDMA and CDMA one-segment 3cm*3cm power amplifier modules：One GaAs
Chip provides the radio-frequency power required for power amplifier；One CMOS chip is supplied to the stable operating voltage of gallium arsenide chips
Value, to ensure that the working condition of gallium arsenide transistor is not influenceed by the fluctuation of external voltage source；Encapsulate factory gallium arsenide chips,
CMOS chip, SMD capacitor and inductors are attached on substrate, and then they are linked together by way of beating gold thread or copper cash,
They are encapsulated on a component (module) finally by plastic packaging material and makes last finished product.
Usually, it is necessary to use 0201 or 01005 SMD capacitor and inductors in above-mentioned modular design.SMD capacitor and inductors
Effect be radio-frequency match, capacitor filtering and radio frequency blocking：Radio-frequency match includes input matching, interstage matched and output matching；
Capacitor filtering is mainly filtered to the low frequency on power supply to ensure radio-frequency power amplifier work at steady-state；Penetrate
Frequency capacitance ensures that radiofrequency signal be able to can not pass through by the path and direct current.It is used in usual radio-frequency power amplifier
SMD capacitor and inductors be Japan murata productions, such as run into as Earthquakes in Japan and tsunami natural calamity can influence SMD confession
Should be so as to causing the short supply of whole radio-frequency power amplifier module；Encapsulation factory production capacity anxiety is also frequently encountered in addition and is caused whole
The short supply of individual radio-frequency power amplifier module.
Therefore, encapsulation production capacity how is effectively improved, and reduces cost, is that solution is badly in need of in existing power amplifier package design
Certainly the problem of.
The content of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, there is provided a kind of 3G radio-frequency power amplifiers electricity
Road, its is compact-sized, can effectively improve encapsulation production capacity, reduces packaging cost, adaptability is good, securely and reliably.
According to technical scheme provided by the utility model, the 3G RF power amplifier circuits, including it is defeated for receiving
Enter the first order structure for amplifying of signal and the second level structure for amplifying for amplified signal to be exported, first order structure for amplifying
It is connected by intervalve matching circuit with second level structure for amplifying；
First order structure for amplifying include radio frequency amplifier tube T1, the input matching circuit that is adapted to the radio frequency amplifier tube T1 with
And the amplifier tube T1 biasing circuits being adapted to the radio frequency amplifier tube T1；
Second level structure for amplifying include radio frequency amplifier tube T2, the output matching circuit that is adapted to the radio frequency amplifier tube T2 with
And the amplifier tube T2 biasing circuits being adapted to the radio frequency amplifier tube T2；
The input matching circuit includes the resistance R1 that be connected with radio frequency amplifier tube T1 base terminals, the resistance R1 other end and
Chip capacity C1 one end connection, the chip capacity C1 other end are grounded by substrate wire-wound inductor L1, and chip capacity C1
The other end and substrate wire-wound inductor L1 one end form input IN after being connected with each other；
Intervalve matching circuit includes chip capacity C4, chip capacity C3 and substrate wire-wound inductor RFC1, chip capacity C4
One end be connected with radio frequency amplifier tube T2 base terminal, the collector terminal of the chip capacity C4 other end and radio frequency amplifier tube T1 connects
Connect, the one end of radio frequency amplifier tube T1 collector terminal also with substrate wire-wound inductor RCF1 is connected, and substrate wire-wound inductor RCF1's is another
One end is connected with chip capacity C3 one end and power supply VCC2, chip capacity C3 other end ground connection；
Output matching circuit includes chip capacity C5, substrate wire-wound inductor RFC2 and substrate wire-wound inductor L2, radio frequency are put
Big pipe T2 collector terminal is connected with substrate wire-wound inductor RFC2 one end, chip capacity C5 one end, substrate wire-wound inductor
The RFC2 other end is connected with power supply VCC2, and the chip capacity C5 other end is connected with substrate wire-wound inductor L2 one end, substrate
Wire-wound inductor L2 other end ground connection, and one end that chip capacity C5 is connected with substrate wire-wound inductor L2 forms amplification output end
OUT。
The amplifier tube T1 biasing circuits include biasing amplifier tube T3, biasing amplifier tube T4 and biasing amplifier tube T5, partially
Putting amplifier tube T3 emitter stage, and the resistance R1 other end, electric capacity C1 one end are connected and resistance R4 one end connects, resistance
The R4 other end is connected with electric capacity C2 one end, and the electric capacity C2 other end is connected with radio frequency amplifier tube T1 colelctor electrode；
Biasing amplifier tube T3 collector terminal is connected with voltage Vreg, biasing amplifier tube T3 base terminal and the one of electric capacity C6
One end connection of amplifier tube T5 collector terminal, biasing amplifier tube T5 base terminal and resistance R2 is held, biases, electric capacity C6's is another
One end is grounded with biasing after amplifier tube T4 emitter terminal is connected, the collection of biasing amplifier tube T4 base terminal and biasing amplifier tube T4
The emitter terminal connection of electrode tip and biasing amplifier tube T5, the resistance R2 other end are connected with voltage Vreg.
The amplifier tube T2 biasing circuits include biasing amplifier tube T6, biasing amplifier tube T7 and biasing amplifier tube T8, partially
The emitter terminal for putting amplifier tube T6 is connected with radio frequency amplifier tube T2 base terminal, and biasing amplifier tube T6 base terminal is with electric capacity C7's
One end, one end connection of biasing amplifier tube T8 base terminal, biasing amplifier tube T8 collector terminal and resistance R3, resistance R3's
The colelctor electrode Duan Junyu voltages Vreg connections of the other end and biasing amplifier tube T6, electric capacity the C7 other end and biasing amplifier tube T7
Emitter terminal connection after be grounded, biasing amplifier tube T7 base terminal and biasing amplifier tube T7 collector terminal and biasing are amplified
Pipe T8 emitter terminal connection.
The advantages of the utility model：First order structure for amplifying is connected by intervalve matching circuit with second level structure for amplifying,
The input matching circuit of first order structure for amplifying, the output matching circuit of second level structure for amplifying and the intervalve matching circuit
Do not use SMD electric capacity and SMD inductance, encapsulation production capacity can be effectively improved, reduce packaging cost, improve the adaptability of encapsulation,
Securely and reliably.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model.
Embodiment
With reference to specific drawings and examples, the utility model is described in further detail.
As shown in Figure 1：In order to effectively improve encapsulation production capacity, packaging cost is reduced, the utility model includes being used to receive
The first order structure for amplifying of input signal and the second level structure for amplifying for amplified signal to be exported, first order amplification knot
Structure is connected by intervalve matching circuit with second level structure for amplifying；
First order structure for amplifying include radio frequency amplifier tube T1, the input matching circuit that is adapted to the radio frequency amplifier tube T1 with
And the amplifier tube T1 biasing circuits being adapted to the radio frequency amplifier tube T1；
Second level structure for amplifying include radio frequency amplifier tube T2, the output matching circuit that is adapted to the radio frequency amplifier tube T2 with
And the amplifier tube T2 biasing circuits being adapted to the radio frequency amplifier tube T2；
The input matching circuit includes the resistance R1 that be connected with radio frequency amplifier tube T1 base terminals, the resistance R1 other end and
Chip capacity C1 one end connection, the chip capacity C1 other end are grounded by substrate wire-wound inductor L1, and chip capacity C1
The other end and substrate wire-wound inductor L1 one end form input IN after being connected with each other；
Intervalve matching circuit includes chip capacity C4, chip capacity C3 and substrate wire-wound inductor RFC1, chip capacity C4
One end be connected with radio frequency amplifier tube T2 base terminal, the collector terminal of the chip capacity C4 other end and radio frequency amplifier tube T1 connects
Connect, the one end of radio frequency amplifier tube T1 collector terminal also with substrate wire-wound inductor RCF1 is connected, and substrate wire-wound inductor RCF1's is another
One end is connected with chip capacity C3 one end and power supply VCC2, chip capacity C3 other end ground connection；
Output matching circuit includes chip capacity C5, substrate wire-wound inductor RFC2 and substrate wire-wound inductor L2, radio frequency are put
Big pipe T2 collector terminal is connected with substrate wire-wound inductor RFC2 one end, chip capacity C5 one end, substrate wire-wound inductor
The RFC2 other end is connected with power supply VCC2, and the chip capacity C5 other end is connected with substrate wire-wound inductor L2 one end, substrate
Wire-wound inductor L2 other end ground connection, and one end that chip capacity C5 is connected with substrate wire-wound inductor L2 forms amplification output end
OUT。
Specifically, resistance R1, chip capacity C1 and substrate wire-wound inductor L1 composition input matching circuits, compared to existing need
To use the matched form of SMD electric capacity and SMD inductance, the utility model using chip capacity C1 and substrate wire-wound inductor L1 with
Resistance R1 coordinates, and the same purpose that can realize input matching, when not using SMD electric capacity with SMD inductance, can reduce and be packaged into
This.When it is implemented, obtain and use chip capacity and the process of substrate wire-wound inductor be those skilled in the art known to,
Here is omitted.
Further, chip capacity C3, chip capacity C4 and substrate wire-wound inductor RFC1 composition intervalve matching circuits, phase
Than the existing interstage matched form realized using SMD filter capacitors outside one-level matching and piece, the utility model utilizes chip capacity
C3, chip capacity C4 and substrate wire-wound inductor RFC1 can equally realize the purpose of interstage matched, when not using SMD electric capacity,
Packaging cost can be reduced.
In addition, chip capacity C5, substrate wire-wound inductor L2 and substrate wire-wound inductor RFC2 composition output matching circuits, profit
Output matching is not only acted as with chip capacity C5 to act on, moreover it is possible to realize the effect of direct current blocking.Needed compared to existing using SMD electricity
Hold and the output matching form of SMD inductance formation, the utility model utilize chip capacity C5, substrate wire-wound inductor L2 and substrate
Wire-wound inductor RFC2 can equally realize output matching purpose, when not using SMD electric capacity and SMD inductance, can effectively drop
Low packaging cost, improve encapsulation production capacity.
Further, the amplifier tube T1 biasing circuits include biasing amplifier tube T3, biasing amplifier tube T4 and biased to put
Big pipe T5, biasing amplifier tube T3 emitter stage with the resistance R1 other end, electric capacity C1 one end is connected and resistance R4 one end
Connection, the resistance R4 other end are connected with electric capacity C2 one end, and the electric capacity C2 other end connects with radio frequency amplifier tube T1 colelctor electrode
Connect；
Biasing amplifier tube T3 collector terminal is connected with voltage Vreg, biasing amplifier tube T3 base terminal and the one of electric capacity C6
One end connection of amplifier tube T5 collector terminal, biasing amplifier tube T5 base terminal and resistance R2 is held, biases, electric capacity C6's is another
One end is grounded with biasing after amplifier tube T4 emitter terminal is connected, the collection of biasing amplifier tube T4 base terminal and biasing amplifier tube T4
The emitter terminal connection of electrode tip and biasing amplifier tube T5, the resistance R2 other end are connected with voltage Vreg.
In the utility model embodiment, resistance R4 and electric capacity C2 composition feedback circuits.Bias amplifier tube T3, biasing amplification
Pipe T4 and biasing amplifier tube T5 can use NPN triode, it is of course also possible to use the amplifier tube of other forms, specifically may be used
To be selected as needed, it is selected specifically to known to those skilled in the art, here is omitted.
The amplifier tube T2 biasing circuits include biasing amplifier tube T6, biasing amplifier tube T7 and biasing amplifier tube T8, partially
The emitter terminal for putting amplifier tube T6 is connected with radio frequency amplifier tube T2 base terminal, and biasing amplifier tube T6 base terminal is with electric capacity C7's
One end, one end connection of biasing amplifier tube T8 base terminal, biasing amplifier tube T8 collector terminal and resistance R3, resistance R3's
The colelctor electrode Duan Junyu voltages Vreg connections of the other end and biasing amplifier tube T6, electric capacity the C7 other end and biasing amplifier tube T7
Emitter terminal connection after be grounded, biasing amplifier tube T7 base terminal and biasing amplifier tube T7 collector terminal and biasing are amplified
Pipe T8 emitter terminal connection.
In the utility model embodiment, biasing amplifier tube T6, biasing amplifier tube T7 and biasing amplifier tube T8 can be used
NPN triode, it is of course also possible to use the amplifier tube of form, particular type can be selected as needed, be specially this skill
Known to the personnel of art field, here is omitted.
Claims (3)
1. a kind of 3G RF power amplifier circuits, it is characterized in that：Including the first order structure for amplifying for receiving input signal
And the second level structure for amplifying for amplified signal to be exported, first order structure for amplifying pass through intervalve matching circuit and second
Level structure for amplifying connection；
First order structure for amplifying include radio frequency amplifier tube T1, with the radio frequency amplifier tube T1 input matching circuits being adapted to and with
The amplifier tube T1 biasing circuits of the radio frequency amplifier tube T1 adaptations；
Second level structure for amplifying include radio frequency amplifier tube T2, with the radio frequency amplifier tube T2 output matching circuits being adapted to and with
The amplifier tube T2 biasing circuits of the radio frequency amplifier tube T2 adaptations；
The input matching circuit includes the resistance R1 being connected with radio frequency amplifier tube T1 base terminals, resistance the R1 other end and chip
Electric capacity C1 one end connection, the chip capacity C1 other end is grounded by substrate wire-wound inductor L1, and chip capacity C1's is another
End and substrate wire-wound inductor L1 one end form input IN after being connected with each other；
Intervalve matching circuit includes chip capacity C4, chip capacity C3 and substrate wire-wound inductor RFC1, and the one of chip capacity C4
End is connected with radio frequency amplifier tube T2 base terminal, and the chip capacity C4 other end is connected with radio frequency amplifier tube T1 collector terminal,
The one end of radio frequency amplifier tube T1 collector terminal also with substrate wire-wound inductor RCF1 is connected, the substrate wire-wound inductor RCF1 other end
It is connected with chip capacity C3 one end and power supply VCC2, chip capacity C3 other end ground connection；
Output matching circuit includes chip capacity C5, substrate wire-wound inductor RFC2 and substrate wire-wound inductor L2, radio frequency amplifier tube
T2 collector terminal is connected with substrate wire-wound inductor RFC2 one end, chip capacity C5 one end, substrate wire-wound inductor RFC2's
The other end is connected with power supply VCC2, and the chip capacity C5 other end is connected with substrate wire-wound inductor L2 one end, substrate coiling electricity
Feel L2 other end ground connection, and one end that chip capacity C5 is connected with substrate wire-wound inductor L2 forms amplification output end OUT.
2. 3G RF power amplifier circuits according to claim 1, it is characterized in that：The amplifier tube T1 biasing circuit bags
Include biasing amplifier tube T3, biasing amplifier tube T4 and biasing amplifier tube T5, biasing amplifier tube T3 emitter stage is another with resistance R1's
One end, electric capacity C1 one end connection and resistance R4 one end connection, the resistance R4 other end are connected with electric capacity C2 one end, electricity
The other end for holding C2 is connected with radio frequency amplifier tube T1 colelctor electrode；
Biasing amplifier tube T3 collector terminal be connected with voltage Vreg, bias amplifier tube T3 base terminal and electric capacity C6 one end,
One end connection of amplifier tube T5 collector terminal, biasing amplifier tube T5 base terminal and resistance R2 is biased, electric capacity C6's is another
Hold and be grounded with biasing after amplifier tube T4 emitter terminal is connected, the current collection of biasing amplifier tube T4 base terminal and biasing amplifier tube T4
Extreme and biasing amplifier tube T5 emitter terminal connection, the resistance R2 other end are connected with voltage Vreg.
3. 3G RF power amplifier circuits according to claim 1, it is characterized in that：The amplifier tube T2 biasing circuit bags
Biasing amplifier tube T6, biasing amplifier tube T7 and biasing amplifier tube T8 are included, biasing amplifier tube T6 emitter terminal and radio frequency amplify
Pipe T2 base terminal connection, biasing amplifier tube T6 base terminal and electric capacity C7 one end, biasing amplifier tube T8 base terminal, biasing
Amplifier tube T8 collector terminal and resistance R3 one end connection, the resistance R3 other end and biasing amplifier tube T6 colelctor electrode
The Vreg connections of Duan Junyu voltages, the electric capacity C7 other end are grounded with biasing after amplifier tube T7 emitter terminal is connected, biasing amplification
Pipe T7 base terminal is connected with biasing amplifier tube T7 collector terminal and biasing amplifier tube T8 emitter terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621462605.3U CN206850728U (en) | 2016-12-28 | 2016-12-28 | 3G RF power amplifier circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621462605.3U CN206850728U (en) | 2016-12-28 | 2016-12-28 | 3G RF power amplifier circuits |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206850728U true CN206850728U (en) | 2018-01-05 |
Family
ID=60789983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621462605.3U Active CN206850728U (en) | 2016-12-28 | 2016-12-28 | 3G RF power amplifier circuits |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206850728U (en) |
-
2016
- 2016-12-28 CN CN201621462605.3U patent/CN206850728U/en active Active
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| GR01 | Patent grant |