CN105811892B - A kind of double bias supplying circuits of mobile terminal - Google Patents
A kind of double bias supplying circuits of mobile terminal Download PDFInfo
- Publication number
- CN105811892B CN105811892B CN201610246336.5A CN201610246336A CN105811892B CN 105811892 B CN105811892 B CN 105811892B CN 201610246336 A CN201610246336 A CN 201610246336A CN 105811892 B CN105811892 B CN 105811892B
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- circuit
- biasing
- field effect
- reference current
- bjt6
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The present invention discloses a kind of double bias supplying circuits of mobile terminal, including biasing selection circuit, high voltage reference current biasing circuit, the reference current biasing circuit with low pressure difference linear voltage regulator, when biasing selection circuit and drawing angle by PIN and detect that the voltage of battery is in high value, high voltage reference current biasing circuit is connected biasing selection circuit, biased reference electric current is provided to amplifier tube BJT6, the reference current biasing circuit cut-off with low pressure difference linear voltage regulator；When biasing selection circuit and drawing angle by PIN and detect that the voltage of battery is in lower value, it biases selection circuit the reference current biasing circuit with low pressure difference linear voltage regulator is connected, biased reference electric current, the cut-off of high voltage reference current biasing circuit are provided to amplifier tube BJT6.This patent reduces the complexity of circuit design, saves the area of chip, reduces the cost of manufacture.
Description
Technical field
The present invention relates to the biasing circuits in a kind of mobile terminal.
Background technique
Current 3G HBT（Bipolar transistor）Power amplifier be supply biasing circuit using battery, but has a problem in that
When cell voltage has a big variation, biasing circuit cannot follow well, so, compare 2.9V when cell voltage drops to
When also low, biasing circuit cannot correctly work.The present invention is exactly to solve biasing circuit the low-voltage the case where
Can not correctly work down this problem.In current mobile terminal, such as mobile phone etc., we will realize the logical of mobile phone
Communication function, we just must have receiving end, and there are also transmitting terminals, we signal will will send in transmitting terminal, must just use
Antenna is sent.It is known that the length of antenna will be on the same order of magnitude with the wavelength of signal, but mobile phone day
Line length is very short again, so, we will carry out mixing operation to signal, so that the frequency of signal is reached higher, could send
It goes out.It is farther in order to enable signal to propagate in space, so we need to amplify signal, so we will design
Radio-frequency power amplifier amplifies signal.In the power amplifiers, it is divided into two modules, one is gain enlarging section
Point, one is bias circuit portion.So-called biasing circuit, that is, refer to for power amplifier provide one it is stable, not by work
Skill, voltage, temperature influence（Or influence very little）Bias voltage or electric current circuit, biasing circuit once cannot correctly work
Make, that entire power amplifier cannot realize its function.
Recently, we have a new needs, that is, before battery runs down, cell voltage may need to be reduced to
2.3V, on this aspect, if still intactly using the design scheme of the biasing circuit of script, too low electricity
Cell voltage will lead to biasing circuit and power amplifier stops working.And a current solution is exactly additional one
BICMOS chip, bias voltage can be transformed into 2.3V, and will not influence its function.BICMOS technique refers to CMOS and bipolar
Device is integrated in technology on same chip simultaneously, BICMOS circuit both had cmos circuit high integration, low-power consumption it is excellent
Point, and obtain bipolar circuit high speed, the advantage of strong current drive ability.
For this solution of a current additional BICMOS chip, it means that we need one
Silicon（Silicon）And HBT（Bipolar transistor）Dual chip solution, that is, need two chips to make a power amplifier,
One is done biasing circuit, and one is done gain module, and this not only adds the complexity of circuit design and difficulty, this also means that at
This can greatly improve, and the present invention is exactly to solve dual chip this problem by one circuit of design.
Summary of the invention
In order to solve the shortcomings of the prior art, the object of the present invention is to provide a kind of double supplies of mobile terminal biasings
Circuit.The circuit reduces the complexity of circuit design, saves the area of chip, reduces the cost of manufacture.
To achieve the above object, the technical scheme adopted by the invention is that：
A kind of double bias supplying circuits of mobile terminal, including biasing selection circuit, high voltage reference current biasing circuit,
Reference current biasing circuit with low pressure difference linear voltage regulator detects battery when biasing selection circuit draws angle by PIN
When voltage is in high value, high voltage reference current biasing circuit is connected biasing selection circuit, provides to amplifier tube BJT6 inclined
Reference current is set, the reference current biasing circuit cut-off with low pressure difference linear voltage regulator；When biasing selection circuit is drawn by PIN
When angle detects that the voltage of battery is in lower value, biasing selection circuit is inclined by the reference current with low pressure difference linear voltage regulator
Circuits conducting provides biased reference electric current, the cut-off of high voltage reference current biasing circuit to amplifier tube BJT6.
Further, the voltage reference current biasing circuit includes field effect transistor JFET3 and resistance R1, with low
The reference current biasing circuit of pressure difference linear voltage regulator includes low pressure difference linear voltage regulator, field effect transistor JFET4 and resistance
R2, low pressure difference linear voltage regulator, field effect transistor JFET4 and resistance R2 be sequentially connected in series afterwards with the field effect transistor that concatenates
JFET3 and resistance R1 are in parallel.
It further, further include transistor BJT1, field effect transistor JFET5 and field effect transistor JFET6 and inductance
L1, transistor BJT1 and the amplifier tube BJT6 form a current mirror, be equal to the electric current for flowing through transistor BJT1 can
Flow through the electric current of amplifier tube BJT6；The field effect transistor JFET5 and field effect transistor JFET6, to give transistor
The BJT1 and amplifier tube BJT6 provides the voltage of base stage；The base stage of the transistor BJT1 passes through inductance L1 and amplifier tube
The base stage of BJT6 connects.
Beneficial effects of the present invention：This scheme makes to examine to power amplifier by Pin foot by one circuit of design
It surveys voltage and selects different biasing circuits, so two chips ability of scheme before only needing to complete using a chip
The function that can be completed, reduces the complexity of circuit design；In addition, low pressure difference linear voltage regulator voltage is that mobile terminal is interior originally
It come what is just had, and is used in radio frequency chip, does not need to design a low pressure difference linear voltage regulator voltage in other,
Therefore the area of chip is saved, reduce the cost of manufacture.
Detailed description of the invention
Invention is further described in detail with reference to the accompanying drawings and detailed description：
Fig. 1 is circuit block diagram of the invention；
Fig. 2 is electrical schematic diagram of the invention.
Specific embodiment
As shown in Figure 1, a kind of includes biasing selection circuit, high voltage reference current biasing circuit, with low pressure difference linearity
The reference current biasing circuit of voltage-stablizer detects that the voltage of battery is in high value when biasing selection circuit draws angle by PIN
When, high voltage reference current biasing circuit is connected biasing selection circuit, provides biased reference electric current to amplifier tube BJT6, has
The reference current biasing circuit of low pressure difference linear voltage regulator ends；Battery is detected when biasing selection circuit draws angle by PIN
When voltage is in lower value, the reference current biasing circuit with low pressure difference linear voltage regulator is connected biasing selection circuit, gives
Amplifier tube BJT6 provides biased reference electric current, the cut-off of high voltage reference current biasing circuit.
As shown in Fig. 2, the voltage reference current biasing circuit includes field effect transistor JFET3 and resistance R1, have
The reference current biasing circuit of low pressure difference linear voltage regulator includes low pressure difference linear voltage regulator, field effect transistor JFET4 and electricity
Hinder R2, low pressure difference linear voltage regulator, field effect transistor JFET4 and resistance R2 be sequentially connected in series afterwards with the field effect transistor that concatenates
JFET3 and resistance R1 are in parallel.It further include transistor BJT1, field effect transistor JFET5 and field effect transistor JFET6 and inductance
L1, transistor BJT1 and the amplifier tube BJT6 form a current mirror, be equal to the electric current for flowing through transistor BJT1 can
Flow through the electric current of amplifier tube BJT6；The field effect transistor JFET5 and field effect transistor JFET6, to give transistor
The BJT1 and amplifier tube BJT6 provides the voltage of base stage；The base stage of the transistor BJT1 passes through inductance L1 and amplifier tube
The base stage of BJT6 connects.
The biasing selection circuit is by transistor BJT2, transistor BJT4, transistor BJT5, resistance R3, resistance R4, resistance
R5, resistance R6 composition, to realize the function of detecting and selecting to voltage.PIN foot has been used to detect the electricity transmitted from circuit
Pressure, if voltage is in a higher value, that is, when detecting that Vext is a bigger value, voltage passes through resistance
R6 reaches the base stage of transistor BJT5, and transistor BJT5 is connected, and then transistor BJT4 is connected.Transistor BJT4's leads
It is logical Vlow to be pulled low to ground voltage, so field effect transistor JFET3 ends, branch where field effect transistor JFET3
A reference current will not be generated.At this point, the base voltage of BJT2 is zero, so transistor BJT2 ends, and Vhigh will
Equal to Vbias, then field effect transistor JFET4 is connected, and field effect transistor JTET4 will generate one according to the value of Vhigh
A reference bias current, electric current flows through BJT1, then is mirrored to amplifier tube BJT6 by transistor BJT1, to realize to amplification
Pipe BJT6 provides the function of bias current, makes amplifier tube BJT6 work on a stable operating point.If voltage is in one
When a lower value, that is, when detecting that Vext is a smaller value, voltage reaches the base of transistor BJT5 by R6
Pole, since voltage is smaller, so ending transistor BJT5, the base stage for resulting in transistor BJT4 does not have voltage, so
Transistor BJT4 is also switched off.The cut-off of transistor BJT4 can make Vlow be in a relatively high point under the action of Vbias
On position, the voltage of Vlow reaches the base stage of transistor BJT2 by R5, transistor BJT2 is connected, the conducting of transistor BJT2 is again
Vhigh can be pulled low to ground potential, so field effect transistor JFET4 ends, branch where field effect transistor JFET4 is just
A reference current will not be generated.Since Vlow is on a relatively high current potential, so JFET3 is connected, JTET3 will root
A reference bias current is generated according to the value of Vlow, electric current flows through transistor BJT1, then is mirrored to and puts by transistor BJT1
Big pipe BJT6 provides the function of bias current to amplifier tube BJT6 to realize, and makes amplifier tube BJT6 work in a stabilization
Operating point on.
The above is a preferred embodiment of the present invention, cannot limit the right model of the present invention with this certainly
It encloses, it is noted that for those skilled in the art, modify or wait to technical solution of the present invention
With replacement, without departure from the protection scope of technical solution of the present invention.
Claims (1)
1. a kind of double bias supplying circuits of mobile terminal, it is characterised in that：Including biasing selection circuit, high voltage reference electric current
Biasing circuit, the reference current biasing circuit with low pressure difference linear voltage regulator, when biasing selection circuit draws angle detection by PIN
When being in high value to the voltage of battery, high voltage reference current biasing circuit is connected biasing selection circuit, gives amplifier tube
BJT6 provides biased reference electric current, the reference current biasing circuit cut-off with low pressure difference linear voltage regulator；When biasing selection electricity
When road draws angle by PIN and detects that the voltage of battery is in lower value, biasing selection circuit will have low pressure difference linear voltage regulator
Reference current biasing circuit conducting, to amplifier tube BJT6 provide biased reference electric current, high voltage reference current biasing circuit cut
Only；The high voltage reference current biasing circuit includes field effect transistor JFET3 and resistance R1, has low pressure difference linearity pressure stabilizing
The reference current biasing circuit of device includes low pressure difference linear voltage regulator, field effect transistor JFET4 and resistance R2, low pressure difference linearity
Voltage-stablizer, field effect transistor JFET4 and resistance R2 be sequentially connected in series afterwards with the field effect transistor JFET3 and resistance R1 that concatenate simultaneously
Connection；Further include transistor BJT1, field effect transistor JFET5 and field effect transistor JFET6 and inductance L1, transistor BJT1 and
The amplifier tube BJT6 forms a current mirror, be equal to the electric current for flowing through transistor BJT1 can and flow through amplifier tube BJT6
Electric current；The field effect transistor JFET5 and field effect transistor JFET6, to give transistor BJT1 and the amplification
The voltage of pipe BJT6 offer base stage；The base stage of the transistor BJT1 is connect by inductance L1 with the base stage of amplifier tube BJT6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610246336.5A CN105811892B (en) | 2016-04-20 | 2016-04-20 | A kind of double bias supplying circuits of mobile terminal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610246336.5A CN105811892B (en) | 2016-04-20 | 2016-04-20 | A kind of double bias supplying circuits of mobile terminal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105811892A CN105811892A (en) | 2016-07-27 |
| CN105811892B true CN105811892B (en) | 2018-11-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610246336.5A Expired - Fee Related CN105811892B (en) | 2016-04-20 | 2016-04-20 | A kind of double bias supplying circuits of mobile terminal |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106559041B (en) * | 2016-10-27 | 2019-11-15 | 锐迪科微电子（上海）有限公司 | A kind of bias control circuit and control method of radio-frequency power amplifier |
| CN106557108A (en) * | 2016-12-14 | 2017-04-05 | 天津市优创科技企业孵化器有限公司 | A kind of biasing circuit of mobile terminal |
| CN112332884B (en) * | 2020-11-19 | 2021-06-01 | 华南理工大学 | Gallium nitride-based radio frequency transceiving front-end structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1961477A (en) * | 2004-04-08 | 2007-05-09 | 硅锗半导体（美国）公司 | Automatic current reduction biasing technique for RF amplifier |
| CN102185566A (en) * | 2011-01-21 | 2011-09-14 | 锐迪科创微电子（北京）有限公司 | Technology for controlling radio frequency power amplifier for compensating voltage change of system power supply |
| CN103138690A (en) * | 2012-12-17 | 2013-06-05 | 广州慧智微电子有限公司 | Circuit capable of conducting power compensation through bias current in radio frequency power amplifier |
| TWI504138B (en) * | 2009-10-05 | 2015-10-11 | Hittite Microwave Corp | An active bias control circuit for an amplifier,an active bias control circuit,an active bias control circuit on an integrated circuit chip,a low dropout regulator for providing a regulated voltage and an input current to an amplifier,and a method for po |
-
2016
- 2016-04-20 CN CN201610246336.5A patent/CN105811892B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1961477A (en) * | 2004-04-08 | 2007-05-09 | 硅锗半导体（美国）公司 | Automatic current reduction biasing technique for RF amplifier |
| TWI504138B (en) * | 2009-10-05 | 2015-10-11 | Hittite Microwave Corp | An active bias control circuit for an amplifier,an active bias control circuit,an active bias control circuit on an integrated circuit chip,a low dropout regulator for providing a regulated voltage and an input current to an amplifier,and a method for po |
| CN102185566A (en) * | 2011-01-21 | 2011-09-14 | 锐迪科创微电子（北京）有限公司 | Technology for controlling radio frequency power amplifier for compensating voltage change of system power supply |
| CN103138690A (en) * | 2012-12-17 | 2013-06-05 | 广州慧智微电子有限公司 | Circuit capable of conducting power compensation through bias current in radio frequency power amplifier |
Non-Patent Citations (1)
| Title |
|---|
| 低压差线性稳压器MAX667及其应用;孙兵等;《电子元器件应用》;电子元器件应用;20021231;第4卷(第12期);第25-27页 * |
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| CN105811892A (en) | 2016-07-27 |
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Granted publication date: 20181127 Termination date: 20210420 |