CN207691762U - Radio-frequency power amplifier for NB-IOT technologies - Google Patents
Radio-frequency power amplifier for NB-IOT technologies Download PDFInfo
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- CN207691762U CN207691762U CN201820039016.7U CN201820039016U CN207691762U CN 207691762 U CN207691762 U CN 207691762U CN 201820039016 U CN201820039016 U CN 201820039016U CN 207691762 U CN207691762 U CN 207691762U
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Abstract
The utility model discloses a kind of radio-frequency power amplifier comprising：Substrate；Rf inputs；RF output end；Input matching circuit, first order radio-frequency power enlarged structure, intervalve matching circuit, second level radio-frequency power enlarged structure and the output matching circuit being coupled to successively between the rf inputs and the RF output end.Inductance in input matching circuit, intervalve matching circuit and output matching circuit is formed by the transmission line on substrate.Without SMD inductance, design is simple, reduces cost.
Description
【Technical field】
The utility model is related to radio circuit fields, more particularly to are used for NB-IOT (Narrow Band Internet of
Things, NB-IoT adapt to honeycomb narrowband Internet of Things) radio-frequency power amplifier of technology.
【Background technology】
The modular design of existing one-segment 2mm*2.5mm power amplifier modules：One gallium arsenide chips provides power
The required radio-frequency power of amplifier；One CMOS (Complementary Metal Oxide Semiconductor) chip
It is supplied to the operating voltage value that gallium arsenide chips are stablized to ensure the working condition of gallium arsenide transistor not by external voltage source wave
Dynamic influence；Factory is encapsulated to paste gallium arsenide chips, CMOS chip, SMD (Surface Mount Technology) capacitor and inductor
On substrate, then they are linked together by way of beating gold thread or copper wire, then the handle by way of beating gold thread
They link together, they are packaged together finally by the packing forms of LGA (Land Grid Array).
Need to use 0201 or 01005 SMD capacitor and inductors and substrate in above-mentioned modular design.SMD capacitor and inductors
Effect is radio-frequency match, capacitor filtering and radio frequency blocking：Radio-frequency match includes that input matches, and interstage matched and output match；Electricity
Capacitor filter is mainly filtered the low frequency on power supply to ensure radio-frequency power amplifier work at steady-state；Radio frequency
Capacitance ensures that radiofrequency signal can direct current cannot pass through by the access.It has to introduce using the design of SMD simultaneously
Substrate is packaged.
Design scheme packaging cost in the prior art using SMD capacitor and inductors and substrate is high, design is complicated.Therefore,
It is necessary to propose a kind of improved plan to overcome the above problem.
【Utility model content】
The purpose of this utility model is to provide a kind of radio-frequency power amplifiers for NB-IOT technologies, use nothing
The design scheme of SMD capacitor and inductors can save packaging cost.
To realize that the purpose of this utility model, the utility model provide a kind of radio-frequency power amplifier comprising：Substrate；
Rf inputs；RF output end；The input matching being coupled to successively between the rf inputs and the RF output end
Circuit, first order radio-frequency power enlarged structure, intervalve matching circuit, second level radio-frequency power enlarged structure and output matching electricity
Road, wherein first order radio-frequency power enlarged structure include the first radio-frequency power amplifying transistor and the first biasing circuit, and first partially
Circuits provide bias voltage to the base stage of the first radio-frequency power amplifying transistor, and second level radio-frequency power enlarged structure includes the
Two radio-frequency power amplifying transistors and the second biasing circuit, the second biasing circuit give the base stage of the second radio-frequency power amplifying transistor
Bias voltage is provided, input matching circuit includes the base for being coupled to rf inputs and the first radio-frequency power amplifying transistor successively
Capacitance C1 between pole and resistance R1, the electricity being coupled to successively between the collector and base stage of the first radio-frequency power amplifying transistor
Hold C2 and resistance R4, and the inductance L1 being coupled between rf inputs and ground terminal；Intervalve matching circuit includes being coupled to
Inductance RFC1 between power end and the collector of the first radio-frequency power amplifying transistor, it is coupled to the first radio-frequency power successively puts
Capacitance C4, capacitance C5 and resistance R5 between the collector and the base stage of the second radio-frequency power amplifying transistor of big transistor, coupling
The inductance L3 being connected between capacitance C4 and the intermediate node and ground terminal of capacitance C5 is coupled to the first radio-frequency power amplifying transistor
Collector and ground terminal between capacitance C3 and inductance L2；Output matching circuit includes being coupled to power end and the second radio frequency work(
Inductance RFC2 between the collector of rate amplifying transistor, the collector and radio frequency for being coupled to the second radio-frequency power amplifying transistor
Capacitance C8 between output end, the capacitance being coupled to successively between the collector and ground terminal of the second radio-frequency power amplifying transistor
C6 and inductance L4, the capacitance C7 and inductance being coupled to successively between the collector and ground terminal of the second radio-frequency power amplifying transistor
L5, the inductance L6 being coupled between RF output end and ground terminal；Wherein inductance L1, inductance L2, inductance L3, inductance L4, inductance
L5, inductance L6, inductance RFC1, inductance RFC2, inductance RFC3 are formed by the transmission line on substrate.
Compared with prior art, the radio-frequency power amplifier for NB-IOT technologies in the utility model in addition to inductance it is equal
On chip piece, and each inductance is formed by the transmission line on substrate, and without SMD inductance, design is simple,
Reduce cost.
【Description of the drawings】
It will be better understood in conjunction with refer to the attached drawing and next detailed description, the utility model, wherein same attached drawing
The corresponding same structure member of label, wherein：
Fig. 1 is the circuit of the radio-frequency power amplifier for NB-IOT technologies in one embodiment in the utility model
Figure.
【Specific implementation mode】
To keep the above objects, features, and advantages of the utility model more obvious and easy to understand, below in conjunction with the accompanying drawings and have
Body embodiment is described in further detail the utility model.
In view of this, the utility model proposes a kind of radio-frequency power amplifier for NB-IOT technologies, do not need
Using SMD capacitor and inductors and substrate.
Fig. 1 be radio-frequency power amplifier 100 for NB-IOT technologies in the utility model in one embodiment
Circuit diagram.The radio-frequency power amplifier 100 includes：Rf inputs IN；RF output end OUT；It is coupled to described penetrate successively
Input matching circuit, first order radio-frequency power enlarged structure, interstage matched electricity between frequency input terminal and the RF output end
Road, second level radio-frequency power enlarged structure and output matching circuit.
First order radio-frequency power enlarged structure include the first radio-frequency power amplifying transistor T1 and the first biasing circuit, first
Biasing circuit provides bias voltage to the base stage of the first radio-frequency power amplifying transistor, and second level radio-frequency power enlarged structure includes
Second radio-frequency power amplifying transistor and the second biasing circuit, the second biasing circuit give the base of the second radio-frequency power amplifying transistor
Pole provides bias voltage.
Input matching circuit includes the base stage for being coupled to rf inputs and the first radio-frequency power amplifying transistor T1 successively
Between capacitance C1 and resistance R1, the capacitance that is coupled to successively between the collector and base stage of the first radio-frequency power amplifying transistor
C2 and resistance R4, and the inductance L1 that is coupled between rf inputs and ground terminal.The parameter for adjusting input matching circuit, can
So that it is 65-75 ohm that the collector of the first radio-frequency power amplifying transistor T1, which is output impedance,.
Intervalve matching circuit includes being coupled between power end and the collector of the first radio-frequency power amplifying transistor T1
Inductance RFC1, the collector for being coupled to the first radio-frequency power amplifying transistor T1 successively and the second radio-frequency power amplifying transistor T2
Base stage between capacitance C4, capacitance C5 and resistance R4, be coupled between capacitance C4 and the intermediate node and ground terminal of capacitance C5
Inductance L3, the capacitance C3 and inductance L2 being coupled between the collector and ground terminal of the first radio-frequency power amplifying transistor T1.
The parameter for adjusting intervalve matching circuit, it is 3- that the collector of the second radio-frequency power amplifying transistor T2 can be made, which to be output impedance,
5 ohm.Wherein, capacitance C3 and inductance L2 form second order resonant network, and resonant frequency is twice of dominant frequency, inhibits the secondary of dominant frequency
Harmonic wave.In this embodiment, dominant frequency is 850Mhz.
Output matching circuit includes being coupled between power end and the collector of the second radio-frequency power amplifying transistor T2
Inductance RFC2, the capacitance C8 being coupled between the collector and RF output end of the second radio-frequency power amplifying transistor, successively coupling
The capacitance C6 and inductance L4 being connected between the collector and ground terminal of the second radio-frequency power amplifying transistor T2 are coupled to successively
Capacitance C7 between the collector and ground terminal of two radio-frequency power amplifying transistors and inductance L5 is coupled to RF output end and connects
Inductance L6 between ground terminal.The parameter for adjusting output matching circuit, it is 50 Europe that RF output end OUT can be made, which to be output impedance,
Nurse.Wherein, capacitance C6 and inductance L4 form second order resonant network, and resonant frequency is twice of dominant frequency, inhibits the secondary of dominant frequency
Harmonic wave；Capacitance C7 and inductance L5 form three rank resonant networks, and the three times that resonant frequency is inhibit the triple-frequency harmonics of dominant frequency.
Part 110 in the dotted line frame of the radio-frequency power amplifier is located in chip, is installed on a substrate, inductance
L1- inductance L6, inductance RFC1- inductance RFC2 is formed by the transmission line on substrate.Capacitance C1- capacitances C8 is that piece powers on
Hold, the radio-frequency power amplifier is formed on gallium arsenide chips.This way it is not necessary to which SMD inductance capacitances can be completed to input
Matching, interstage matched and output matching.
First biasing circuit includes resistance R2, capacitance C9, bipolar transistor T3, T4 and T5, one end of resistance R2 and ginseng
It examines voltage end to be connected, the other end of resistance R2 is connected with the collector of bipolar transistor T5, the base stage of bipolar transistor T5
It is connected with its collector, the emitter of bipolar transistor T5 is connected with the collector of bipolar transistor T4, bipolar transistor
The base stage of pipe T4 is connected with its collector, and the emitter ground connection of bipolar transistor T4, capacitance C9 is coupled to bipolar transistor
Between the base stage and ground terminal of T3, the base stage of bipolar transistor T3 is connected with the collector of bipolar transistor T5, ambipolar
The collector of transistor T3 is connected with reference voltage end, and the emitter of bipolar transistor T3 is coupled to the amplification of the first radio-frequency power
The base stage of transistor.
Second biasing circuit includes resistance R3, capacitance C10, bipolar transistor T7, T8 and T6, one end of resistance R3 and ginseng
It examines voltage end to be connected, the other end of resistance R3 is connected with the collector of bipolar transistor T8, the base stage of bipolar transistor T8
It is connected with its collector, the emitter of bipolar transistor T8 is connected with the collector of bipolar transistor T7, bipolar transistor
The base stage of pipe T7 is connected with its collector, and the emitter ground connection of bipolar transistor T7, capacitance C10 is coupled to bipolar transistor
Between the base stage and ground terminal of T6, the base stage of bipolar transistor T6 is connected with the collector of bipolar transistor T8, ambipolar
The collector of transistor T6 is connected with reference voltage end, and the emitter of bipolar transistor T6 is coupled to the amplification of the second radio-frequency power
The base stage of transistor.
In the present invention, using unique compacting harmonic wave scheme：Intervalve matching circuit uses second order Resonance Neural Network
Network, output matching circuit add three rank resonant networks using second order, and the program is while improving harmonic wave it is also ensured that output work
Rate and efficiency will not reduce.
Increase a second order without SMD capacitor and inductors, intervalve matching circuit in radio-frequency power amplifier in the utility model
Resonant network (C3 and L2) is used for improving harmonic wave and efficiency, and capacitance uses substrate wire-wound inductor using the capacitance on chip, inductance
To realize；Output matching circuit improves harmonic wave and efficiency using second order resonant network and three rank resonant networks.
The word that the expressions such as " coupling ", " connected ", " connecting ", " connection ", " ground connection " in the utility model are electrically connected, is removed
What is illustrated is outer, all indicates direct or indirect and is electrical connected, and being indirectly electrical connected means that centre can connect one
A little devices, such as resistance or inductance etc..
Above description fully discloses specific embodiment of the present utility model.It should be pointed out that being familiar with the neck
Right of any change that the technical staff in domain does specific embodiment of the present utility model all without departing from the utility model
The range of claim.Correspondingly, the scope of the claims of the utility model is also not limited only to the specific embodiment party
Formula.
Claims (4)
1. a kind of radio-frequency power amplifier, which is characterized in that it includes：
Substrate；
Rf inputs；
RF output end；
Input matching circuit, the first order radio-frequency power being coupled to successively between the rf inputs and the RF output end
Enlarged structure, intervalve matching circuit, second level radio-frequency power enlarged structure and output matching circuit,
Wherein first order radio-frequency power enlarged structure includes the first radio-frequency power amplifying transistor and the first biasing circuit, and first partially
Circuits provide bias voltage to the base stage of the first radio-frequency power amplifying transistor, and second level radio-frequency power enlarged structure includes the
Two radio-frequency power amplifying transistors and the second biasing circuit, the second biasing circuit give the base stage of the second radio-frequency power amplifying transistor
Bias voltage is provided,
Input matching circuit includes being coupled to successively between rf inputs and the base stage of the first radio-frequency power amplifying transistor
Capacitance C1 and resistance R1, the capacitance C2 and electricity being coupled to successively between the collector and base stage of the first radio-frequency power amplifying transistor
R4 is hindered, and the inductance L1 being coupled between rf inputs and ground terminal；
Intervalve matching circuit includes the inductance being coupled between power end and the collector of the first radio-frequency power amplifying transistor
The base stage of RFC1, the collector for being coupled to the first radio-frequency power amplifying transistor successively and the second radio-frequency power amplifying transistor it
Between capacitance C4, capacitance C5 and resistance R5, the inductance L3 being coupled between capacitance C4 and the intermediate node and ground terminal of capacitance C5,
The capacitance C3 and inductance L2 being coupled between the collector and ground terminal of the first radio-frequency power amplifying transistor；
Output matching circuit includes the inductance being coupled between power end and the collector of the second radio-frequency power amplifying transistor
RFC2, the capacitance C8 being coupled between the collector and RF output end of the second radio-frequency power amplifying transistor, are coupled to successively
Capacitance C6 between the collector and ground terminal of second radio-frequency power amplifying transistor and inductance L4, is coupled to the second radio frequency successively
Capacitance C7 between the collector and ground terminal of power amplifying transistor and inductance L5, be coupled to RF output end and ground terminal it
Between inductance L6；
Wherein inductance L1, inductance L2, inductance L3, inductance L4, inductance L5, inductance L6, inductance RFC1, inductance RFC2, inductance RFC3
It is formed by the transmission line on substrate.
2. radio-frequency power amplifier according to claim 1, which is characterized in that inductance L1 to inductance 6, inductance RFC1- electricity
It is on-chip inductor to feel RFC2, and capacitance C1 to capacitance C8 is on-chip capacitance, and the radio-frequency power amplifier is to be formed in arsenic
On gallium chip.
3. radio-frequency power amplifier according to claim 1, which is characterized in that the first biasing circuit includes resistance R2, electricity
Hold C9, one end of bipolar transistor T3, T4 and T5, resistance R2 is connected with reference voltage end, the other end of resistance R2 with it is bipolar
The collector of transistor npn npn T5 is connected, and the base stage of bipolar transistor T5 is connected with its collector, the hair of bipolar transistor T5
Emitter-base bandgap grading is connected with the collector of bipolar transistor T4, and the base stage of bipolar transistor T4 is connected with its collector, ambipolar crystalline substance
The emitter of body pipe T4 is grounded, and capacitance C9 is coupled between the base stage and ground terminal of bipolar transistor T3, bipolar transistor
The base stage of T3 is connected with the collector of bipolar transistor T5, and the collector of bipolar transistor T3 is connected with reference voltage end,
The emitter of bipolar transistor T3 is coupled to the base stage of the first radio-frequency power amplifying transistor；
Second biasing circuit includes resistance R3, capacitance C10, bipolar transistor T7, T8 and T6, one end and the reference electricity of resistance R3
Pressure side be connected, the other end of resistance R3 is connected with the collector of bipolar transistor T8, the base stage of bipolar transistor T8 and its
Collector is connected, and the emitter of bipolar transistor T8 is connected with the collector of bipolar transistor T7, bipolar transistor T7
Base stage be connected with its collector, the emitter of bipolar transistor T7 ground connection, capacitance C10 is coupled to bipolar transistor T6's
Between base stage and ground terminal, the base stage of bipolar transistor T6 is connected with the collector of bipolar transistor T8, bipolar transistor
The collector of pipe T6 is connected with reference voltage end, and the emitter of bipolar transistor T6 is coupled to the second radio-frequency power amplification crystal
The base stage of pipe,
Capacitance C9 to capacitance C10 is on-chip capacitance.
4. radio-frequency power amplifier according to claim 1, which is characterized in that capacitance C3 and inductance L2 form second order resonance
Network, resonant frequency are twice of dominant frequency, and the second harmonic of dominant frequency, capacitance C6 and inductance L4 is inhibited to form second order resonant network,
Its resonant frequency is twice of dominant frequency, inhibits the second harmonic of dominant frequency；Capacitance C7 and inductance L5 form three rank resonant networks, resonance
Frequency is three times of dominant frequency, inhibits the triple-frequency harmonics of dominant frequency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820039016.7U CN207691762U (en) | 2018-01-10 | 2018-01-10 | Radio-frequency power amplifier for NB-IOT technologies |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820039016.7U CN207691762U (en) | 2018-01-10 | 2018-01-10 | Radio-frequency power amplifier for NB-IOT technologies |
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| Publication Number | Publication Date |
|---|---|
| CN207691762U true CN207691762U (en) | 2018-08-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820039016.7U Active CN207691762U (en) | 2018-01-10 | 2018-01-10 | Radio-frequency power amplifier for NB-IOT technologies |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107947743A (en) * | 2018-01-10 | 2018-04-20 | 无锡中普微电子有限公司 | Radio-frequency power amplifier for NB IOT technologies |
| CN110545078A (en) * | 2019-07-18 | 2019-12-06 | 电子科技大学 | Microstrip power amplifier |
-
2018
- 2018-01-10 CN CN201820039016.7U patent/CN207691762U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107947743A (en) * | 2018-01-10 | 2018-04-20 | 无锡中普微电子有限公司 | Radio-frequency power amplifier for NB IOT technologies |
| CN110545078A (en) * | 2019-07-18 | 2019-12-06 | 电子科技大学 | Microstrip power amplifier |
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