CN108964621A - Filtering framework is strengthened in a kind of radio-frequency power amplifier and its matching - Google Patents

Filtering framework is strengthened in a kind of radio-frequency power amplifier and its matching Download PDF

Info

Publication number
CN108964621A
CN108964621A CN201811189567.2A CN201811189567A CN108964621A CN 108964621 A CN108964621 A CN 108964621A CN 201811189567 A CN201811189567 A CN 201811189567A CN 108964621 A CN108964621 A CN 108964621A
Authority
CN
China
Prior art keywords
frequency
inductance
circuit
framework
radio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811189567.2A
Other languages
Chinese (zh)
Inventor
赵罡
龙华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lansus Technologies Inc
Original Assignee
Lansus Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lansus Technologies Inc filed Critical Lansus Technologies Inc
Priority to CN201811189567.2A priority Critical patent/CN108964621A/en
Publication of CN108964621A publication Critical patent/CN108964621A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56Modifications of input or output impedances, not otherwise provided for
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

The present invention provides a kind of radio-frequency power amplifier and its filtering framework is strengthened in matching.The framework includes: input inductance, and one end connects RF signal input end;First trap circuit, one end connect the other end of the input inductance and one end with resistance circuit, and the other end connects power ground;The band resistance circuit, the other end connect one end of the second trap circuit and one end of band-pass circuit;Second trap circuit, the other end connect the power ground;Band-pass circuit, the other end connect RF signal output.The present invention greatly reduces the design difficulty of power-amplifier front-end, provides the harmonic inhibition capability of 50dbc or more in 1.4GHz-3.8GHz, 350MHz-450MHz offer is more than the half-wave rejection ability of 10dbc, while being lower than 1.7db with interior Insertion Loss.

Description

Filtering framework is strengthened in a kind of radio-frequency power amplifier and its matching
Technical field
The present invention relates to radio-frequency power amplifier fields, and in particular to filter is strengthened in a kind of radio-frequency power amplifier and its matching Wave framework.
Background technique
Increasingly developed with the communication technology, the requirement to radio-frequency power amplifier is also higher and higher.With NB-IoT radio frequency For power amplifier, NB-IoT (Narrow Band Internet of Things, narrowband Internet of Things) is all things on earth internet One important branch of network.NB-IoT is implemented in cellular network, only consumes the bandwidth of about 180KHz, can be deployed directly into GSM Network (Global System for Mobile Communications, global system for mobile communications), UMTS network (Universal Mobile Telecommunications System, Universal Mobile Telecommunications System) or LTE network (Long Term Evolution, long term evolution), to reduce lower deployment cost, realize smooth upgrade.
NB-IoT is the emerging technology in one, the field IoT, and low power consuming devices is supported to connect in the cellular data of wide area network, It is regarded as low-power consumption wide area network (LPWAN).NB-IoT supports that stand-by time is long, connecting to the efficient of network connectivity requirements higher device It connects.It is said that the NB-IoT device battery service life can be improved at least 10 years, while can also provide very comprehensive indoor cellular data Connection covering.In NB-IoT radio-frequency power amplifier, harmonics restraint also has high-order harmonic wave generally since 1.4GHz It controls consumption.
In traditional 2G communication system, for the harmonics restraint of NB-IoT radio-frequency power amplifier low frequency only need from 1.6GHz starting.NB-IoT RF system of new generation then requires harmonics restraint since 1.4GHz, additionally also requires to be added The half-wave of 350MHz-460MHz 10dbc inhibits, and this considerably increases the research and development difficulty of NB-IoT radio-frequency power amplifier front end.
Traditional filter matching network often increase specific trap circuit after being matched to 50 ohm enhance filtering, this Also additional radio frequency link loss and NB-IoT radio-frequency power amplifier research and development cost be will increase.
Summary of the invention
The embodiment of the invention provides a kind of matchings of radio-frequency power amplifier to strengthen filtering framework, comprising:
Inductance is inputted, one end connects RF signal input end;
First trap circuit, one end connect the other end of the input inductance and one end with resistance circuit, other end connection Power ground;
The band resistance circuit, the other end connect one end of the second trap circuit and one end of band-pass circuit;
Second trap circuit, the other end connect the power ground;
Band-pass circuit, the other end connect RF signal output.
Further, first trap circuit includes concatenated second capacitor, the second inductance.
Further, described with resistance circuit includes third capacitor in parallel, third inductance.
Further, second trap circuit includes concatenated 4th capacitor, the 4th inductance.
Further, the band-pass circuit includes concatenated 5th inductance, the 5th capacitor.
Further, the input inductance, the second capacitor, the second inductance, third inductance, third capacitor, the 4th capacitor, Four inductance match the RF signal output impedance to 50 ohm.
Further, first trap circuit is different with the second trap circuit frequency.
Further, the band-pass circuit resonance is in basic frequency.
Further, the framework 1.4GHz-3.8GHz frequency provide be more than 50dbc harmonics restraint, in 350MHz- The offer of 450MHz frequency is more than that the half-wave of 10dbc inhibits;The framework is less than 1.7db with interior Insertion Loss.
The embodiment of the present invention also provides a kind of radio-frequency power amplifier, including a kind of radio-frequency power amplifier described above Matching strengthen filtering framework.
The technical solution that the embodiment of the present invention provides, greatly reduces the design difficulty of radio-frequency power amplifier front end, The harmonic inhibition capability of 50dbc or more is provided in 1.4GHz-3.8GHz, 350MHz-450MHz offer is more than the half-wave suppression of 10dbc Ability processed, while being lower than 1.7db with interior Insertion Loss.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other Attached drawing.
Fig. 1 is that the composition schematic diagram of filtering framework is strengthened in a kind of matching of traditional radio-frequency power amplifier;
Fig. 2 is that filtering framework composition signal is strengthened in a kind of matching for radio-frequency power amplifier that one embodiment of the invention provides Figure;
Fig. 3 is that the inhibitory effect schematic diagram of filtering framework is strengthened in the matching of Fig. 1;
Fig. 4 is that filtering framework inhibitory effect schematic diagram is strengthened in the matching of Fig. 2;
Fig. 5 is a kind of radio-frequency power amplifier that one embodiment of the invention provides.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below with reference to drawings and examples, The specific embodiment progress of technical solution of the present invention in further detail, is clearly illustrated.However, specific implementations described below Mode and embodiment are for illustrative purposes only, rather than limiting the invention.It only contains a part of the invention and implements Example, instead of all the embodiments, the other embodiments that those skilled in the art obtain various change of the invention all belong to In the scope of protection of the invention.
Although it should be understood that the first, second, third, etc. term can be used in this article be used to describe various elements or Component, but these elements or component should not be limited by these terms.These terms only to distinguish an element or component with Another element or component.Therefore, the first element or component of following the discussion, holds within the present invention not departing from, is referred to alternatively as Second element or the second component.
Fig. 1 is that the composition schematic diagram of filtering framework is strengthened in a kind of matching of traditional radio-frequency power amplifier.Such as Fig. 1 institute Show, traditional solution, radiofrequency signal is inputted from input terminal, will be hindered by the several matching elements of L1, C1, L4, L2, C2, L5 Anti- to be matched to 50 ohm, wherein C1, L4, C2, L5 are respectively designed to the trap circuit of two different frequencies, and one is designed to inhibit Three ranks and four order harmonics, another inhibits high-frequency harmonic.L3, C3 are the band resistance circuits for 350MHz-450MHz design, and C4 is Capacitance.
Fig. 3 is that the inhibitory effect schematic diagram of filtering framework is strengthened in the matching of Fig. 1.As shown in figure 3, m1-m11 is each frequency Harmonic suppression effect.When frequency is 350MHz, half-wave inhibits m1=-13.714db.When frequency is 460MHz, half-wave inhibits m2 =-24.171db.When frequency is 700MHz, all-wave inhibits m3=-1.867db.When frequency is 915MHz, all-wave inhibits m4=- 1.678db.When frequency is 1.400GHz, second harmonic inhibits m6=-52.278db.When frequency is 1.830GHz, second harmonic Inhibit m7=-39.691db.When frequency is 2.100GHz, triple-frequency harmonics inhibits m8=-42.803db.Frequency is 2.750GHz When, triple-frequency harmonics inhibits m9=-63.458db.When frequency is 2.400GHz, four-time harmonic inhibits m10=-48.619db.Frequency When for 3.800GHz, four-time harmonic inhibits m11=-46.905db.
As it can be seen that traditional framework can provide the rejection ability of about 40-50dbc, the half-wave more than 10dbc inhibits energy Power, while with interior Insertion Loss about in 1.7-1.9db.
Fig. 2 is that filtering framework composition signal is strengthened in a kind of matching for radio-frequency power amplifier that one embodiment of the invention provides Figure.The framework includes input inductance L1, the first trap circuit, band resistance circuit, the second trap circuit, band-pass circuit.
The one end for inputting inductance L1 connects RF signal input end P1.One end connection input inductance L1 of first trap circuit The other end and one end with resistance circuit, the other end connect power ground.The other end with resistance circuit connects the second trap circuit One end of one end and band-pass circuit.The other end of second trap circuit connects power ground.The other end of band-pass circuit connects radio frequency Signal output end.
First trap circuit includes concatenated second capacitor C2, the second inductance L2.One end of second capacitor C2 connects input Inductance L1 and tie point with resistance circuit, the other end of the second capacitor C2 connect one end of the second inductance L2, the second inductance L2's The other end connects power ground.It include third capacitor C3, third inductance L3 in parallel with resistance circuit.Second trap circuit includes series connection The 4th capacitor C4, the 4th inductance L4.The tie point of one end the connecting band resistance circuit and band-pass circuit of 4th capacitor C4, the other end One end of the 4th inductance L4 is connected, the other end of the 4th inductance L4 connects power ground.Band-pass circuit includes concatenated 5th inductance L5, the 5th capacitor C5.The tie point of one end the connecting band resistance circuit and the second trap circuit of 5th inductance L5, other end connection the The other end of one end of five capacitor C5, the 5th capacitor C5 connects RF signal output.
Input inductance L1, the second capacitor C2, the second inductance L2, third inductance L3, third capacitor C3, the 4th capacitor C4, the Four inductance L4 match RF signal output impedance to 50 ohm.
First trap circuit and the second trap circuit frequency are different.Band-pass circuit resonates in basic frequency.5th capacitor C5 is same When be also used as capacitance.
Fig. 4 is that filtering framework inhibitory effect schematic diagram is strengthened in the matching of Fig. 2.As shown in figure 4, m1-m11 is each frequency Harmonic suppression effect.When frequency is 350MHz, half-wave inhibits m1=-19.079db.When frequency is 460MHz, half-wave inhibits m2 =-13.760db.When frequency is 700MHz, all-wave inhibits m3=-1.696db.When frequency is 915MHz, all-wave inhibits m4=- 1.667db.When frequency is 1.4GHz, second harmonic inhibits m6=-64.657db.When frequency is 1.830GHz, second harmonic suppression M7=-53.880db processed.When frequency is 2.100GHz, triple-frequency harmonics inhibits m8=-51.796db.When frequency is 2.750GHz, Triple-frequency harmonics inhibits m9=-57.595db.When frequency is 2.400GHz, four-time harmonic inhibits m10=-53.021db.Frequency is When 3.800GHz, four-time harmonic inhibits m11=-51.718db.
The framework is in the harmonics restraint that the offer of 1.4GHz-3.8GHz frequency is more than 50dbc, in 350MHz-450MHz frequency Offer is more than that the half-wave of 10dbc inhibits.Framework is less than 1.7db with interior Insertion Loss.Better than conventional architectures.
Output matching in radio-frequency power amplifier is the key that direct decision radio-frequency power amplifier performance.Using this Matching strengthen filter structure, filtered out more than it is spuious, the linearity of power amplifier can be improved, and no longer need to using Additional filter can greatly save space and the cost of radio-frequency front-end.
Fig. 5 is a kind of radio-frequency power amplifier that one embodiment of the invention provides.As shown in figure 5, the radio-frequency power amplifies Device 1 includes that filtering framework is strengthened in a kind of matching of radio-frequency power amplifier described above.
Since NB-IoT radio-frequency power amplifier is higher to harmonic requirement, so above-mentioned matching is strengthened filter structure and is used In NB-IoT radio-frequency power amplifier, more properly.
It should be noted that each embodiment above by reference to described in attached drawing is only to illustrate the present invention rather than limits this The range of invention, those skilled in the art should understand that, it is right under the premise without departing from the spirit and scope of the present invention The modification or equivalent replacement that the present invention carries out, should all cover within the scope of the present invention.In addition, signified unless the context Outside, the word occurred in the singular includes plural form, and vice versa.In addition, unless stated otherwise, then any embodiment All or part of in combination with any other embodiment all or part of come using.

Claims (10)

1. filtering framework is strengthened in a kind of matching of radio-frequency power amplifier, comprising:
Inductance is inputted, one end connects RF signal input end;
First trap circuit, one end connect the other end of the input inductance and one end with resistance circuit, and the other end connects power supply Ground;
The band resistance circuit, the other end connect one end of the second trap circuit and one end of band-pass circuit;
Second trap circuit, the other end connect the power ground;
Band-pass circuit, the other end connect RF signal output.
2. framework according to claim 1, wherein first trap circuit includes concatenated second capacitor, the second electricity Sense.
3. framework according to claim 2, wherein described with resistance circuit includes third capacitor in parallel, third inductance.
4. framework according to claim 3, wherein second trap circuit includes concatenated 4th capacitor, the 4th electricity Sense.
5. framework according to claim 4, wherein the band-pass circuit includes concatenated 5th inductance, the 5th capacitor.
6. framework according to claim 5, wherein the input inductance, the second capacitor, the second inductance, third inductance, Three capacitors, the 4th capacitor, the 4th inductance match the RF signal output impedance to 50 ohm.
7. framework according to claim 1, wherein first trap circuit and the second trap circuit frequency are not Together.
8. framework according to claim 1, wherein the band-pass circuit resonance is in basic frequency.
9. framework according to claim 1, wherein the framework is more than 50dbc's in the offer of 1.4GHz-3.8GHz frequency Harmonics restraint inhibits in the half-wave that the offer of 350MHz-450MHz frequency is more than 10dbc;The framework is less than with interior Insertion Loss 1.7db。
10. a kind of radio-frequency power amplifier, including a kind of described in any item radio-frequency power amplifiers of the claim 1 to 9 Matching strengthen filtering framework.
CN201811189567.2A 2018-10-12 2018-10-12 Filtering framework is strengthened in a kind of radio-frequency power amplifier and its matching Pending CN108964621A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811189567.2A CN108964621A (en) 2018-10-12 2018-10-12 Filtering framework is strengthened in a kind of radio-frequency power amplifier and its matching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811189567.2A CN108964621A (en) 2018-10-12 2018-10-12 Filtering framework is strengthened in a kind of radio-frequency power amplifier and its matching

Publications (1)

Publication Number Publication Date
CN108964621A true CN108964621A (en) 2018-12-07

Family

ID=64480863

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811189567.2A Pending CN108964621A (en) 2018-10-12 2018-10-12 Filtering framework is strengthened in a kind of radio-frequency power amplifier and its matching

Country Status (1)

Country Link
CN (1) CN108964621A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113411062A (en) * 2021-08-19 2021-09-17 深圳飞骧科技股份有限公司 Matching circuit, radio frequency front end power amplifying circuit and mobile communication equipment

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1349681A (en) * 1997-07-03 2002-05-15 艾利森公司 Impedance matching circuit for power amplifier
US20060141978A1 (en) * 2004-12-23 2006-06-29 Lianjun Liu Compact radio frequency harmonic filter using integrated passive device technology
US20130187712A1 (en) * 2012-01-23 2013-07-25 Qualcomm Incorporated Impedance matching circuit with tunable notch filters for power amplifier
CN104579189A (en) * 2015-02-04 2015-04-29 广东工业大学 Circuit structure for improving harmonic performance of radio frequency power amplifier
CN107370460A (en) * 2017-07-12 2017-11-21 深圳国民飞骧科技有限公司 A kind of circuit structure and method for improving radio-frequency power amplifier harmonic inhibition capability
CN208904969U (en) * 2018-10-12 2019-05-24 深圳飞骧科技有限公司 Filtering framework is strengthened in a kind of radio-frequency power amplifier and its matching

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1349681A (en) * 1997-07-03 2002-05-15 艾利森公司 Impedance matching circuit for power amplifier
US20060141978A1 (en) * 2004-12-23 2006-06-29 Lianjun Liu Compact radio frequency harmonic filter using integrated passive device technology
US20130187712A1 (en) * 2012-01-23 2013-07-25 Qualcomm Incorporated Impedance matching circuit with tunable notch filters for power amplifier
CN104579189A (en) * 2015-02-04 2015-04-29 广东工业大学 Circuit structure for improving harmonic performance of radio frequency power amplifier
CN107370460A (en) * 2017-07-12 2017-11-21 深圳国民飞骧科技有限公司 A kind of circuit structure and method for improving radio-frequency power amplifier harmonic inhibition capability
CN208904969U (en) * 2018-10-12 2019-05-24 深圳飞骧科技有限公司 Filtering framework is strengthened in a kind of radio-frequency power amplifier and its matching

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113411062A (en) * 2021-08-19 2021-09-17 深圳飞骧科技股份有限公司 Matching circuit, radio frequency front end power amplifying circuit and mobile communication equipment
WO2023020014A1 (en) * 2021-08-19 2023-02-23 深圳飞骧科技股份有限公司 Matching circuit, radio frequency front end power amplification circuit, and mobile communication device
US11936408B2 (en) 2021-08-19 2024-03-19 Lansus Technologies Inc. Matching circuit, radio frequency front-end power amplification circuit, and mobile communication device

Similar Documents

Publication Publication Date Title
CN104716906A (en) Method and circuit structure for improving efficiency of wide-band radio frequency power amplifier
CN113411062B (en) Matching circuit, radio frequency front end power amplifying circuit and mobile communication equipment
EP2978198B1 (en) Mobile wireless communications device with improved broadband antenna impedance matching
CN112968678B (en) Radio frequency power amplifier and communication terminal
US11121694B2 (en) Multiplexer
CN104079312A (en) Transceiver, impedance adjusting device, and impedance adjusting method
CN104022750B (en) A kind of broadband electrically tunable filter circuit
CN208904969U (en) Filtering framework is strengthened in a kind of radio-frequency power amplifier and its matching
CN111130466A (en) Frequency-adjustable broadband low-noise amplifier
CN101615892B (en) Radio frequency power amplifier
CN107565912A (en) A kind of amplifier circuit in low noise with AF panel
CN101789796A (en) Filter circuit for inhibiting harmonic signal of mobile terminal and method therefor
WO2023093359A1 (en) Output matching circuit, radio-frequency power amplifier and radio-frequency chip
US8497744B1 (en) Lattice network for power amplifier output matching
CN207977942U (en) A kind of dual-passband power amplifier
CN108964621A (en) Filtering framework is strengthened in a kind of radio-frequency power amplifier and its matching
CN112886976B (en) Antenna sharing circuit and terminal
WO2024159675A1 (en) Ipd technology-based nb-system passive chip circuit, and chip module
CN113411063A (en) Harmonic suppression matching circuit structure and power amplifier suitable for balun
CN103023458A (en) Active power filter, duplexer and wireless communication equipment
CN109167605A (en) RF front end structure and mobile terminal
CN216649630U (en) Power amplifier and radio frequency chip
CN213783251U (en) Low noise amplifier, low noise amplifying circuit and electronic equipment
CN102111169A (en) Double-mode mobile terminal
CN109450388A (en) Improve the broadband matching circuit and power amplifier of harmonic performance

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information
CB02 Change of applicant information

Address after: 518000 1601, building 1, shuimuyifang building, No. 286, Nanguang Road, dawangshan community, Nantou street, Nanshan District, Shenzhen, Guangdong

Applicant after: Shenzhen Feiyu Technology Co.,Ltd.

Address before: 518057 318, 3F, building B, Guoren building, kejizhong Third Road, Science Park, Yuehai street, Nanshan District, Shenzhen City, Guangdong Province

Applicant before: LANSUS TECHNOLOGIES Inc.