CN104576878A - Light-emitting device - Google Patents
Light-emitting device Download PDFInfo
- Publication number
- CN104576878A CN104576878A CN201410501090.2A CN201410501090A CN104576878A CN 104576878 A CN104576878 A CN 104576878A CN 201410501090 A CN201410501090 A CN 201410501090A CN 104576878 A CN104576878 A CN 104576878A
- Authority
- CN
- China
- Prior art keywords
- light
- pillar
- emitting device
- support
- bearing seat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
The utility model discloses a light-emitting device, which comprises a bearing seat, at least two supports and at least two semiconductor light-emitting assemblies, wherein the at least two supports are arranged on the bearing seat and are mutually coupled; the at least two semiconductor light-emitting assemblies are coupled with the supports respectively; each semiconductor light-emitting assembly comprises a transparent substrate and a light-emitting diode structure; the transparent substrate comprises a supporting face and a second main surface oppositely arranged; the light-emitting diode structure is arranged on the supporting face; and at least part of light emitted from the light-emitting diode structure enters the transparent substrate and gets out from the second main surface. The light-emitting device of the utility model has the advantages that multi-direction or full-direction lighting can be realized, and the light-emitting efficiency and the light-emitting effects are improved.
Description
Technical field
The invention provides a kind of light-emitting device, espespecially a kind of light-emitting device that polytropism light source is provided.
Background technology
The light source of only a kind of directive property that light-emitting diode (light emitting diode, LED) itself sends, not as light source that conventional bulb is a kind of divergence form.Therefore, light-emitting diode can be restricted in application.For example, conventional light emitting diodes cannot or be difficult to reach required illumination effect in the illumination application of general indoor/outdoor.In addition, the light-emitting device of conventional light emitting diodes only can one side luminous, therefore the light-emitting device of the more traditional general indoor/outdoor illumination of its luminous efficiency (luminance efficiency) is low.
Summary of the invention
One of them object of the present invention is to provide a kind of light-emitting device sending polytropism light source, to solve the problem.
For reaching one of above-mentioned purpose of the present invention, one embodiment of the invention provide a kind of light-emitting device, include load bearing seat, at least two supports and at least two semiconductor luminous assemblies; At least two Bracket setting are coupled to each other on this load bearing seat; At least two semiconductor luminous assemblies are coupled with those supports respectively, and respectively this semiconductor luminous assembly comprises transparency carrier and light emitting diode construction, and transparency carrier has the supporting surface and the second first type surface that are oppositely arranged; Light emitting diode construction is arranged on this supporting surface, and wherein at least part of light sent by this light emitting diode construction can enter this transparency carrier and from this second first type surface bright dipping.
As the further improvement of one embodiment of the invention, this transparency carrier comprises extension, is arranged on this support.
As the further improvement of one embodiment of the invention, this light-emitting device also comprises one group of connecting electrode, and this group connecting electrode is arranged on this extension, and this group connecting electrode is electrically connected on this light emitting diode construction and this support.
As the further improvement of one embodiment of the invention, at least one support of those supports comprises slot, and those supports are coupled to each other by this slot.
As the further improvement of one embodiment of the invention, this light-emitting device also comprises pillar, is arranged on this load bearing seat, and wherein at least one support of those supports is coupled with this pillar.
As the further improvement of one embodiment of the invention, this pillar comprises draw-in groove, and at least one support of those supports is coupled with this pillar by this draw-in groove.
As the further improvement of one embodiment of the invention, this pillar comprises at least two draw-in grooves, and those supports are combined to be located on this pillar with those draw-in grooves respectively.
As the further improvement of one embodiment of the invention, this pillar also comprises guide hole, is arranged at least one end face of this pillar.
As the further improvement of one embodiment of the invention, this pillar is coupled with this load bearing seat by this guide hole.
As the further improvement of one embodiment of the invention, this pillar also comprises fluting, and be arranged at least one end face of this pillar, this fluting is connected to one end of this draw-in groove.
As the further improvement of one embodiment of the invention, the area of at least one support of those supports is not less than the area of this semiconductor luminous assembly.
As the further improvement of one embodiment of the invention, this area of this support is more than three times of this area of this semiconductor luminous assembly.
As the further improvement of one embodiment of the invention, at least one support of those supports makes with metal core circuit board material.
As the further improvement of one embodiment of the invention, this light-emitting device also comprises base and lampshade, and base is used for carrying this load bearing seat; Lampshade is arranged at this base to cover this load bearing seat, those supports and those semiconductor luminous assemblies.
For reaching one of above-mentioned purpose of the present invention, one embodiment of the invention provides a kind of light-emitting device, includes load bearing seat, pillar, support and semiconductor luminous assembly; Pillar is arranged at this load bearing seat; Support is coupled in this pillar; Semiconductor luminous assembly is coupled in this support, and this semiconductor luminous assembly comprises transparency carrier and light emitting diode construction, and transparency carrier has the supporting surface and the second first type surface that are oppositely arranged; Light emitting diode construction is arranged on this supporting surface, and wherein at least part of light sent by this light emitting diode construction can enter this transparency carrier and from this second first type surface bright dipping.
As the further improvement of one embodiment of the invention, this transparency carrier also comprises the extension be arranged on this support.
As the further improvement of one embodiment of the invention, this light-emitting device also comprises one group of connecting electrode, and this group connecting electrode is arranged on this extension, and is electrically connected on this light emitting diode construction and this support.
As the further improvement of one embodiment of the invention, this pillar comprises draw-in groove, and this support is coupled with this pillar by this draw-in groove.
As the further improvement of one embodiment of the invention, this pillar also comprises guide hole, is arranged at least one end face of this pillar.
As the further improvement of one embodiment of the invention, this pillar also comprises fluting, and be arranged at least one end face of this pillar, this fluting is connected to one end of this draw-in groove.
Compared with prior art, light-emitting device of the present invention can reach multi-direction or omnidirectional illumination, improves luminous efficiency and illumination effect.
Accompanying drawing explanation
Fig. 1 and Fig. 2 is the structural representation of the semiconductor luminous assembly of a preferred embodiment of the present invention.
Fig. 3, Fig. 4 and Fig. 5 be the multi-form light emitting diode construction of a preferred embodiment of the present invention and wire couple schematic diagram.
Fig. 6 and Fig. 7 is the configuration schematic diagram of the wavelength conversion layer of a preferred embodiment of the present invention.
Fig. 8 is the generalized section of the semiconductor luminous assembly of another preferred embodiment of the present invention.
Fig. 9 is the generalized section of the semiconductor luminous assembly of another preferred embodiment of the present invention.
Figure 10 is the schematic perspective view of the semiconductor luminous assembly of another preferred embodiment of the present invention.
Figure 11 is the schematic diagram of the load bearing seat of a preferred embodiment of the present invention.
Figure 12 is the schematic diagram of the circuit board of a preferred embodiment of the present invention.
Figure 13 is the schematic diagram of the speculum of a preferred embodiment of the present invention.
Figure 14 is the schematic diagram of the quasi cobalt carbon diaphragm of a preferred embodiment of the present invention.
Figure 15 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention.
Figure 16 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention.
Figure 17 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention.
Figure 18, Figure 19 and Figure 20 are the transparency carrier grafting of a preferred embodiment of the present invention or are engaged in the schematic diagram of load bearing seat.
Figure 21 and Figure 22 is the schematic diagram that the transparency carrier of a preferred embodiment of the present invention is engaged in the load bearing seat of tool support.
Figure 23 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention.
Figure 24 is the schematic diagram of the device pedestal of the light-emitting device of another preferred embodiment of the present invention.
Figure 25 is the schematic perspective view of the light-emitting device of another preferred embodiment of the present invention.
Figure 26, Figure 27, Figure 28 and Figure 29 are the transparency carrier of a preferred embodiment of the present invention is arranged at load carrier schematic diagram with point symmetry or line symmetric form.
Figure 30 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention.
Figure 31 and Figure 32 is the schematic diagram of the lampshade of a preferred embodiment of the present invention.
Figure 33 is the schematic diagram of the semiconductor luminous assembly of present pre-ferred embodiments.
Figure 34 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention.
Figure 35 is the combination schematic diagram of the support of present pre-ferred embodiments.
Figure 36 is the schematic diagram of the light-emitting device of the collocation lampshade of present pre-ferred embodiments.
Figure 37 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention.
Figure 38 is the support of the light-emitting device of present pre-ferred embodiments and the combination schematic diagram of pillar.
Figure number illustrates:
Embodiment
Describe the present invention below with reference to embodiment shown in the drawings.But these execution modes do not limit the present invention, the structure that those of ordinary skill in the art makes according to these execution modes, method or conversion functionally are all included in protection scope of the present invention.
Please refer to Fig. 1 and Fig. 2, Fig. 1 and Fig. 2 is the structural representation of the semiconductor luminous assembly of a preferred embodiment of the present invention.As shown in Figures 1 and 2, semiconductor luminous assembly 1 comprises the light emitting diode construction 3 of transparency carrier 2, supporting surface 210, first first type surface 21A, the second first type surface 21B and at least one multi-direction bright dipping.Dull and stereotyped or laminar transparency carrier 2 itself has two major surfaces, and one of them is supporting surface 210, and the light emitting diode construction 3 with lighting function can be arranged on this supporting surface 210.The light-emitting area 34 that light emitting diode construction 3 is not covered by transparency carrier 2 and the part supporting surface 210 not arranging light emitting diode construction 3 are formed jointly can the first first type surface 21A of luminescence.Another major surfaces that transparency carrier 2 is not provided with light emitting diode construction 3 is then the second first type surface 21B.Vice versa for aforementioned arrangement mode, and also can all arrange light emitting diode construction 3 in two of transparency carrier 2 face.In one embodiment of this invention, light emitting diode construction 3 can be arranged at the supporting surface 210 of transparency carrier 2, and it is corresponding to other light emitting diode construction 3 being arranged at the second first type surface 21B staggered, when making the light emitting diode construction 3 on each of transparency carrier 2 luminous, light is not covered by other light emitting diode construction 3 on transparency carrier 2 another side, so can the luminous intensity of corresponding increase semiconductor luminous assembly 1.The material of transparency carrier 2 can comprise and is selected from aluminium oxide (Al
2o
3) or wrap the combination of one of materials such as salic sapphire, carborundum (SiC), glass, plastics or rubber or these materials, wherein, one of present pre-ferred embodiments adopts sapphire substrate as transparency carrier 2, because sapphire substrate is substantially mono-crystalline structures, not only there is good light transmittance, and heat-sinking capability is good, the life-span of semiconductor luminous assembly 1 can be extended.But, use traditional sapphire substrate in the present invention, have easily cracked problem, therefore the present invention is through experimental verification, the better sapphire substrate selecting thickness to be more than or equal to 200 microns (um) of transparency carrier 2 of the present invention, so can reach preferably reliability, and have preferably carrying and light transmission function.In order to make semiconductor luminous assembly 1 effectively send polytropism light, such as amphicheirality or omni-directional light, semiconductor luminous assembly 1 of the present invention has at least the better rising angle of selecting of a light emitting diode construction 3 to be greater than 180 degree of persons.Correspondingly, the light emitting diode construction 3 be arranged on transparency carrier 2 can send past light of advancing away from transparency carrier 2 direction from light-emitting area 34, and light emitting diode construction 3 also can be issued to the light that small part enters transparency carrier 2.And the light entering transparency carrier 2 is except from the second first type surface 21B bright dipping of transparency carrier 2, also can never arranging the part supporting surface 210 of light emitting diode construction 3 or other surperficial bright dippings of substrate 2.So, semiconductor luminous assembly 1 just can at least two-sided bright dipping, multi-direction bright dipping or omnirange bright dipping.In the present invention, the area of the first first type surface 21A or the area of the second first type surface 21B are more than five times of the summation area of the light-emitting area 34 of all light emitting diode constructions 3 be arranged on its surface, are so to take into account the condition such as luminous efficiency and heat radiation and be preferably allocation ratio.
In addition, another preferred embodiment of the present invention is that the colour temperature difference that the first first type surface 21A of semiconductor luminous assembly 1 and the second first type surface 21B send is equal to or less than 1500K, makes semiconductor luminous assembly 1 have uniform illumination effect.Especially, when transparency carrier 2 thickness as previously mentioned, and the emission wavelength range of light emitting diode construction 3 is being more than or equal to 420 nanometers, or when being less than or equal to 470 nanometer, the light transmittance of transparency carrier 2 can be more than or equal to 70%.
The present invention is not limited with above-described embodiment.Hereafter sequentially will introduce other preferred embodiment of the present invention, and for the ease of the deviation of more each embodiment and simplified illustration, use the assembly that identical symbol mark is identical or approximate in the following embodiments, and be described mainly for the deviation of each embodiment, and no longer repeating part is repeated.
Please refer to Fig. 3, Fig. 4 and Fig. 5, light emitting diode construction 3 of the present invention comprises the first electrode 31A and the second electrode 31B and powers to obtain and carry out luminescence.First electrode 31A and the second electrode 31B are connected wire 23A and second respectively and connect wire 23B and be electrically connected with first on transparency carrier 2.Wherein, Fig. 3, Fig. 4 and Fig. 5 disclose multi-form light emitting diode construction 3 and the coupling mode of wire respectively.Fig. 3 is horizontal type light emitting diode construction, and its light emitting diode construction 3 is formed on the supporting surface 210 of transparency carrier 2, and the first electrode 31A and the second electrode 31B are electrically coupled to first respectively in routing mode and are connected wire 23A and are connected wire 23B with second.Fig. 4 is crystal-coated light-emitting diodes structure 3, light emitting diode construction 3 is inverted also mat first electrode 31A and the second electrode 31B and light emitting diode construction 3 and transparency carrier 2 are coupled.First electrode 31A and the second electrode 31B are to weld or gluing mode is directly coupled to first respectively and is connected wire 23A and is connected wire 23B with second.As shown in Figure 5, first electrode 31A and the second electrode 31B is arranged at the not coplanar of light emitting diode construction 3, light emitting diode construction 3 is arranged in a vertical manner, makes the first electrode 31A and the second electrode 31B can be connected wire 23A and second respectively with first and connects wire 23B and be connected.
Please refer to Fig. 6 and Fig. 7, semiconductor luminous assembly 1 of the present invention can more comprise wavelength conversion layer 4, and its selectivity is arranged on the first first type surface 21A or/and the second first type surface 21B, or is directly arranged on light emitting diode construction 3.Wavelength conversion layer 4 can directly contact light emitting diode construction 3, or a segment distance adjacent with light emitting diode construction 3 and directly not contacting.Wavelength conversion layer 4 containing at least one fluorescent material, the fluorescent material of the inorganic or organic material of such as garnet system, sulfate system or silicate etc.Wavelength conversion layer 4 emits beam in order to absorb at least part of light emitting diode construction 3 and is converted to the light of another kind of wave-length coverage.Such as, when light emitting diode construction 3 sends blue light, the convertible some blue light of wavelength conversion layer 4 is gold-tinted, and makes semiconductor luminous assembly 1 finally send white light under blue light and yellow light mix.In addition, because the light source of the first first type surface 21A is mainly from the light that light emitting diode construction 3 directly sends, and the light source of the second first type surface 21B is the light sent through transparency carrier 2 from the light of light emitting diode construction 3, therefore the light intensity (illumination) of the first first type surface 21A can be different from the light intensity (illumination) of the second first type surface 21B.Therefore, the fluorescent material content corresponding configuration of the wavelength conversion layer 4 semiconductor luminous assembly 1, the first first type surface 21A of another preferred embodiment of the present invention and the second first type surface 21B configured.Better, the fluorescent material content being arranged on the wavelength conversion layer 4 on the first first type surface 21A preferably can from 1 to 0.5 to 1 to 3 relative to the ratio of the fluorescent material content of the wavelength conversion layer 4 be arranged on the second first type surface 21B, but vice versa.So, illumination or the illumination effect of semiconductor luminous assembly 1 of the present invention can meet different application demands, and the colour temperature difference that the first first type surface 21A of semiconductor luminous assembly 1 and the second first type surface 21B sends can be controlled in and is equal to or less than 1500K, to promote wavelength conversion efficiency and the illumination effect of semiconductor luminous assembly 1.
Please refer to Fig. 8.Fig. 8 depicts the generalized section of the semiconductor luminous assembly of another preferred embodiment of the present invention.As shown in Figure 8, the semiconductor luminous assembly 1 of the present embodiment comprise transparency carrier 2, with at least one light emitting diode construction 14 that polytropism bright dipping is provided.Transparency carrier 2 has supporting surface 210 positioned opposite to each other and the second first type surface 21B.Light emitting diode construction 14 is arranged on the supporting surface 210 of transparency carrier 2.Light emitting diode construction 14 comprises the first electrode 16 and the second electrode 18, to be electrically connected other device.Light emitting diode construction 14 is not formed the first first type surface 21A by the light-emitting area 34 that transparency carrier 2 covers with the part supporting surface 210 not arranging light emitting diode construction 14 jointly.
Light emitting diode construction 14 can comprise substrate 141, n type semiconductor layer 142, active layers 143 and p type semiconductor layer 144.In this embodiment, the substrate 141 of light emitting diode construction 14 can couple with transparency carrier 2 by mat chip binder course 28.Emitting brightness can improve because of the material behavior optimization of chip binder course 28.For example, the reflectivity of chip binder course 28, preferably between the reflectivity and the reflectivity of transparency carrier 2 of substrate 141, uses the emitting brightness increasing light emitting diode construction 14.In addition, chip binder course 28 can be transparent viscose or other bond material be applicable to.The opposite side that first electrode 16 is arranged on light emitting diode construction 14 with the second electrode 18 is relative with chip binder course 28.First electrode 16 and the second electrode 18 are electrically connected p type semiconductor layer 144 and n type semiconductor layer 142 (annexation of the second electrode 18 and n type semiconductor layer 142 is not shown in Fig. 8) respectively.The upper surface of the first electrode 16 is identical with the level standard essence of the upper surface of the second electrode 18.First electrode 16 and the second electrode 18 can be metal electrode, but are not limited thereto.In addition, semiconductor luminous assembly 1 also comprises the first connection wire 20, second and connects wire 22 and wavelength conversion layer 4.First connection wire 20 is connected wire 22 with second and is arranged on transparency carrier 2.First connection wire 20 is connected wire 22 and can be plain conductor or other conductive pattern with second, but is not limited thereto.First electrode 16 and the second electrode 18 are connected respectively to first with routing or welding manner and are connected wire 20 and are connected wire 22 with second, but are not limited thereto.Wavelength conversion layer 4 to be arranged on transparency carrier 2 and to cover light emitting diode construction 14.In addition, wavelength conversion layer 4 also can be arranged on the second first type surface 21B of transparency carrier 2.
In addition, in this embodiment in order to increase amount of light that light leaves from transparency carrier 2 and make being evenly distributed of bright dipping, the surface of transparency carrier 2 also optionally arranges nonplanar structure 12M.Nonplanar structure 12M can be the geometry of various protrusion or depression, such as pyramid, cone, hemisphere or triangular prism etc., and can be systematicness arrangement or randomness arrangement.Moreover the surface of transparency carrier 2 also alternative arranges class and bores carbon (diamond-like carbon, DLC) film 25 to increase heat conduction and radiating effect.
Please refer to Fig. 9, Fig. 9 depicts the generalized section of the semiconductor luminous assembly of another better alternate embodiment of the present invention.Compared to the embodiment shown in Fig. 8, in the semiconductor luminous assembly 1 of the present embodiment, the first electrode 16, second electrode 18 and the first chip binder course 28A are arranged at the same face of light emitting diode construction 14.First electrode 16 and the second electrode 18 utilize and cover crystal type and be electrically connected on first and be connected wire 20 and be connected wire 22 with second.Wherein, first connects wire 20 and second and connects wire 22 and can stretch out from the position of the first corresponding electrode 16 and the second electrode 18 respectively.First electrode 16 and the second electrode 18 can be electrically connected on first respectively by the second chip binder course 28B and be connected wire 20 and be connected wire 22 with second.Second chip binder course 28B can be conductive projection, and such as gold bump or solder projection, also can be conducting resinl, such as elargol, also can be eutectic layer, such as gold-tin alloy layer (Au-Sn) or low-melting alloy layer (In-Bi-Sn), but be not limited thereto.In this embodiment, the first chip binder course 28A can be vacancy or comprises wavelength conversion layer 4.
Please refer to Figure 10, Figure 10 depicts the schematic perspective view of the semiconductor luminous assembly of another preferred embodiment of the present invention.As shown in Figure 10, semiconductor luminous assembly 310 of the present invention comprises transparency carrier 2, at least one light emitting diode construction 3, first connecting electrode 311A, the second connecting electrode 311B and at least one wavelength conversion layer 4.Light emitting diode construction 3 is arranged on the supporting surface 210 of transparency carrier 2, and the first first type surface 21A that formation can be luminous.In this embodiment, the rising angle of light emitting diode construction 3 is greater than 180 degree, and at least part of light that light emitting diode construction 3 sends can inject transparency carrier 2, and inject light at least partially can from the second first type surface 21B bright dipping of corresponding first first type surface 21A, remaining injects light then can from other surperficial bright dippings of transparency carrier 2, and then make semiconductor luminous assembly 310 can multidirectional bright dipping.First connecting electrode 311A and the second connecting electrode 311B is arranged at not homonymy or the same side (not being shown in Figure 10) of transparency carrier 2 respectively.First connecting electrode 311A and the second connecting electrode 311B be semiconductor luminous assembly 310 to external electrode, can connect wire by first on transparency carrier 2 respectively to be formed with the second extension being connected wire, therefore the first connecting electrode 311A and the second connecting electrode 311B is correspondingly electrically connected at light emitting diode construction 3.Wavelength conversion layer 4 at least covers light emitting diode construction 3 and is exposed to the first connecting electrode 311A and the second connecting electrode 311B of small part.The light that wavelength conversion layer 4 at least part of absorption light emitting diode construction 3 and/or transparency carrier 2 send, and convert the light of another wave-length coverage to.The light be converted with not by the light mixed light that wavelength conversion layer 4 absorbs, to increase the emission wavelength range of semiconductor luminous assembly 310, and improve the illumination effect of semiconductor luminous assembly 310.Semiconductor luminous assembly 310 due to the present embodiment has the first connecting electrode 311A and the second connecting electrode 311B that are arranged at transparency carrier 2 respectively, therefore traditional light-emitting diode encapsulating procedure can omit, and semiconductor luminous assembly 310 combines with the load bearing seat be applicable to after can completing alone making again, the advantages such as the range of application promoting overall fine ratio of product, simplified structure and the load bearing seat joined together by increase therefore can be reached.
Please refer to Figure 11, is the light-emitting device 11 of one embodiment of the invention.Light-emitting device 11 comprises load bearing seat 5 and semiconductor luminous assembly of the present invention.The transparency carrier 2 of semiconductor luminous assembly can erect (or keeping flat) in this load bearing seat 5 and therewith load bearing seat 5 electric property coupling.There is between transparency carrier 2 and load bearing seat 5 first angle theta 1, first angle theta 1 can be and set firmly or need according to the bright dipping light shape of light-emitting device and change.The scope of the first angle theta 1 is preferably between 30 degree to 150 degree.
Please refer to Figure 12, the load bearing seat 5 of light-emitting device 11 of the present invention also can comprise circuit board 6, and it is electrically coupled to power supply supply.Circuit board 6 is also electrically coupled to first on transparency carrier 2 and connects wire and second and connect wire (not being shown in Figure 12), and be electrically connected with light emitting diode construction 3, making power supply supply can pass through circuit board 6 provides light emitting diode construction 3 luminous required electric power.In other preferred embodiment of the present invention, if without arranging this circuit board 6, light emitting diode construction 3 also can pass through the first connection wire and the second connection wire (not being shown in Figure 12) is directly electrically connected at load bearing seat 5, and power supply supply can be powered via load bearing seat 5 pairs of light emitting diode constructions 3.
Please refer to Figure 13, light-emitting device 11 of the present invention also can comprise speculum or filter 8, on the second first type surface 21B being arranged at transparency carrier 2 or supporting surface 210.Speculum or filter 8 can reflect the light penetrating this transparency carrier 2 at least partly that this light emitting diode construction 3 sends, and part are changed by reflection ray penetrated by this first first type surface 21A.Speculum 8 can comprise at least one metal level or Bragg mirror (Bragg reflector), but not as limit.The dielectric film storehouse that Bragg mirror can have a different refractivity by multilayer is formed, or has the dielectric film of different refractivity by multilayer and multiple layer metal oxide stack is formed.
Please refer to Figure 14, light-emitting device 11 of the present invention also can comprise class and bore carbon (diamond-like carbon, DLC) film 9, wherein on quasi cobalt carbon diaphragm 9 supporting surface 210 that is arranged at transparency carrier 2 and/or the second first type surface 21B, to increase heat conduction and radiating effect.
Please refer to Figure 15.Figure 15 depicts the schematic diagram of the light-emitting device of another preferred embodiment of the present invention.As shown in figure 15, the light-emitting device 10 of the present embodiment comprises load bearing seat 26 and semiconductor luminous assembly of the present invention.Semiconductor luminous assembly comprises transparency carrier 2 and at least one light emitting diode construction 14.Semiconductor luminous assembly can embed in load bearing seat 26 at least partly.The electrode 30,32 of load bearing seat 26 is electrically connected the connection wire of semiconductor luminous assembly, makes power supply can pass through electrode 30,32 and correspondingly provides driving voltage V+, and V-to emit beam L to drive light emitting diode construction 14.Light emitting diode construction 14 comprises the first electrode 16 and the second electrode 18, is electrically connected the first connection wire 20 is respectively connected wire 22 with second in routing mode, but the mode be electrically connected is not limited thereto.In addition, the beam angle of light emitting diode construction 14 is greater than 180 degree or have multiple light-emitting area, makes light-emitting device 10 can from the first first type surface 21A and the second first type surface 21B bright dipping.Moreover because some light directly can penetrate by light emitting diode construction 14 and/or by four sidewalls of transparency carrier 2, therefore light-emitting device 10 can have the characteristic of multifaceted light-emitting, six luminescences or omnirange bright dipping.
Semiconductor luminous assembly of the present invention more comprises selectivity and is provided with wavelength conversion layer 4 on light emitting diode construction 14, first first type surface 21A or the second first type surface 21B.At least part of light that wavelength conversion layer 4 Absorbable rod light emitting diode construction 14 sends also is converted to the light of another wave-length coverage, sends specific photochromic or light that wave-length coverage is wider to make light-emitting device 10.For example, when light emitting diode construction 14 produces blue light, the blue light of part can be converted into gold-tinted by wavelength conversion layer 4, and light-emitting device 10 can send the white light become with yellow light mix by blue light.In addition, transparency carrier 2 can in parallel or non-parallel manner directly or non-immediate be installed in load bearing seat 26.For example, directly engage with load bearing seat 26 by by the sidewall of transparency carrier 2, transparency carrier 2 erectly can be fixedly arranged on load bearing seat 26 or can be flatly arranged on load bearing seat 26 by transparency carrier 2, but is not limited thereto.Transparency carrier 2 is better comprises the high material of heat conductivity, and the heat that light emitting diode construction 14 produces by this can be emitted to load bearing seat 26 via transparency carrier 2, therefore high-power light emitting diode construction is applicable at light-emitting device of the present invention.In any case, in one of preferred embodiment of the present invention, under there is at light-emitting device the condition of same consumed power, the thermal conduction characteristic that transparency carrier 12 can make full use of transparency carrier 12 is dispersed in the light emitting diode construction of multiple smaller power, the power of each light emitting diode construction 14 of such as the present embodiment can be equal to or less than 0.2 watt, but not as limit.
Please refer to Figure 16.Figure 16 depicts the schematic diagram of the light-emitting device of another preferred embodiment of the present invention.Compared to the light-emitting device shown in Figure 15, the light-emitting device 10 ' of the present embodiment comprises a plurality of light emitting diode construction 14, and light emitting diode construction 14 is at least partially electrically connected to each other in a series arrangement.Each light emitting diode construction 14 comprises the first electrode 16 and the second electrode 18.First electrode 16 of one of them light emitting diode construction 14 is arranged on one end of series connection and is electrically connected at the first connection wire 20, and the second electrode 18 of another light emitting diode construction 14 is arranged on the other end of series connection and is electrically connected at the second connection wire 22, but be not limited thereto.A plurality of light emitting diode construction 14 can serial or parallel connection mode be electrically connected to each other.A plurality of light emitting diode construction 14 can send identical coloured light, such as, be all blue light diode; Or a plurality of light emitting diode construction 14 sends different color light respectively, to meet different application demand.Light-emitting device 10 ' of the present invention also can send more kinds of different coloured light by wavelength conversion layer 4.
Please refer to Figure 17.Figure 17 depicts the schematic diagram of the light-emitting device of another preferred embodiment of the present invention.Compared to the light-emitting device shown in Figure 15 and Figure 16, the light-emitting device 50 of the present embodiment more comprises support 51, in order to link semiconductor luminous assembly of the present invention and load bearing seat 26.The transparency carrier 2 of semiconductor luminous assembly is fixedly arranged on the side of support 51 by assembly knitting layer 52, and the opposite side of support 51 can be arranged at or insert load bearing seat 26.In addition, support 51 has elasticity and can form angle between transparency carrier 2 and load bearing seat 26, and angle is between 30-150 degree.The material of support 51 can comprise be selected from aluminium, copper, composite metal, electric wire, pottery, printed circuit board (PCB) or other be applicable to material.
Please refer to Figure 18, Figure 19 and Figure 20, when the transparency carrier 2 in the present invention is arranged on load bearing seat 5, one of preferred embodiment can pass through grafting or the mode of joint to reach the combination of transparency carrier 2 and load bearing seat 5.
As shown in figure 18, when transparency carrier 2 is arranged on load bearing seat 5, transparency carrier 2 is plugged in the single slot 61 of load bearing seat 5, and makes semiconductor luminous assembly be electrically coupled to slot 61 through connection wire.Light emitting diode construction (not being shown in Figure 18) on transparency carrier 2 is electrically coupled to power supply supply through load bearing seat 5, and at least part of conductive pattern on transparency carrier 2 or connect wire and extend the edge being connected to transparency carrier 2, and be integrated into the golden finger structure or electrical port with plural conductive contact, such as electrically port can be aforesaid connecting electrode 311A and connecting electrode 311B (not being shown in Figure 18).When transparency carrier 2 is plugged in slot 61, light emitting diode construction (not being shown in Figure 18) can obtain power supply by load bearing seat 5, and transparency carrier 2 correspondingly can be fixedly arranged on the slot 61 of load bearing seat 5.
Please refer to Figure 19, Figure 19 is the structural representation that transparency carrier 2 is plugged in the plurality of slots of load bearing seat 5.In this embodiment, transparency carrier 2 has two pin configuration, and one of them pin can be the positive pole of semiconductor luminous assembly, and another pin then can be the negative pole of semiconductor luminous assembly.Two pins all have at least one conductive contact blade using as port.Accordingly, there are load bearing seat 5 at least two slots 61 conformed to external form with pin inserting surface size, make transparency carrier 2 can insert load bearing seat 5 smoothly, and allow light emitting diode construction obtain power supply.
Please refer to Figure 20.Transparency carrier 2 is engaged in load bearing seat 5 by assembly knitting layer.In the process engaged, can through metal material such as use gold, tin, indium, bismuth, silver etc. transparency carrier 2 be combined with load bearing seat 5 or weld together.Or, also can make the silica gel of apparatus conductivity or transparency carrier 2 is fixedly arranged on load bearing seat 5 by epoxy resin.So, semiconductor luminous assembly conductive pattern or connect wire and namely can pass through assembly knitting layer and be electrically connected at load bearing seat.
Please refer to Figure 21 and Figure 22.The load bearing seat 5 of light-emitting device 11 of the present invention can be substrate, and baseplate material can comprise one of the material being selected from aluminium, copper, composition metal, electric wire, pottery or printed circuit board (PCB) etc. containing aluminium.The surface of load bearing seat 5 or side have at least one support 62.Support 62 is can be two mechanism member be separated from each other with load bearing seat 5, or the mechanism member of integration.Semiconductor luminous assembly can pass through mode and support 62 electric property coupling of joint, and assembly knitting layer 63 is in order to be fixedly arranged on load bearing seat 5 by transparency carrier 2.There is between load bearing seat 5 and transparency carrier 2 first angle theta 1 as the aforementioned.The unsupported surface of load bearing seat 5 also can arrange semiconductor luminous assembly, to promote the illumination effect of light-emitting device 11.In addition, semiconductor luminous assembly also can pass through inserting mode connection bracket 62 (not being shown in Figure 21 and Figure 22), namely connect semiconductor luminous assembly and support (and/or support and load bearing seat), so that transparency carrier 2 is fixedly arranged on load bearing seat 5 by use connector.Because load bearing seat 5 and support 62 are bent mechanism member, because this increasing the flexibility of the present invention when applying; Also can pass through that to use the semiconductor luminous assembly of different emission wavelength to be combined into difference photochromic simultaneously, make light-emitting device 11 bright dipping have variability with satisfied different demand.
Please refer to Figure 23.As shown in figure 23, the light-emitting device of the present embodiment comprises at least one semiconductor luminous assembly 1 and load bearing seat 5.Load bearing seat 5 comprises at least one support 62 and at least one circuit pattern P.One end of the transparency carrier of semiconductor luminous assembly 1 and support 62 electric property coupling, to avoid or to reduce the screening effect of support 62 pairs of semiconductor luminous assemblies 1 bright dipping.Load bearing seat 5 can be selected from metal as aluminium, copper, material containing aluminium composite metal, electric wire, pottery or printed circuit board (PCB) etc.Support 62 can be to be cut from a part for load bearing seat 5 and bend an angle (the first angle theta 1 as shown in Figure 21 and Figure 22) and forms.Circuit pattern P is arranged on load bearing seat 5, and circuit pattern P also has at least one group of electrical end points to be electrically connected power supply supply.Separately some extends to be electrically connected semiconductor luminous assembly 1 on support 62 circuit pattern P, and the circuit pattern P making semiconductor luminous assembly 1 can pass through load bearing seat 5 is electrically connected at power supply supply.In addition, load bearing seat 5 more can comprise at least one hole H or at least one breach G, makes fixture load bearing seat 5 and other assemblies be made further structure according to light-emitting device application scenarios fill as screw, nail or latch etc. can pass through this hole H or breach G or install.Meanwhile, the setting of hole H or breach G also increases the area of dissipation of load bearing seat 5, promotes the radiating effect of light-emitting device.
Please refer to Figure 24.Figure 24 depicts the schematic perspective view of the device pedestal of the light-emitting device of another preferred embodiment of the present invention.As shown in figure 24, the device pedestal 322 of the present embodiment comprises load bearing seat 5 and at least one support 62.Compared to the embodiment of Figure 23, the support 62 of the present embodiment comprises at least one stripes 342 and breach 330.Electrode 30,32 is arranged at the both sides of breach 330 respectively, and stripes 342 at least forms an abutment wall of breach 330.Semiconductor luminous assembly correspondence of the present invention be arranged at breach 330 and with support 62 electric property coupling.The connection wire of semiconductor luminous assembly is electrically connected at electrode 30,32, and the circuit pattern that power supply supply be can pass through on support 62 and load bearing seat 5 drives semiconductor luminous assembly.The size of breach 330 can be not less than the main light-emitting area of semiconductor luminous assembly, and the bright dipping of semiconductor luminous assembly can not be covered by support 62.Junction between support 62 and load bearing seat 5 can be movable design, and angle between support 62 and load bearing seat 5 can optionally be adjusted.
Please refer to Figure 24 and Figure 25.Figure 25 depicts the schematic perspective view of the light-emitting device of another preferred embodiment of the present invention.Compared to the embodiment of Figure 24, the light-emitting device 302 shown in Figure 25 more comprises at least one support 62 with a plurality of breach 330.A plurality of breach 330 is arranged at two relative edges of support 62 respectively, and stripes 342 at least forms an abutment wall of each breach 330.A plurality of semiconductor luminous assembly 310 is corresponding with a plurality of breach 330 to be arranged, and the circuit pattern of each semiconductor luminous assembly 310 or connecting electrode (not being shown in Figure 25) are corresponding respectively arranges and be electrically connected at electrode 30 and electrode 32.The light-emitting device 302 of the present embodiment further can comprise a plurality of support 62, and support 62 is arranged between semiconductor luminous assembly 1 and load bearing seat 5.The length of support 62 can essence between 5.8-20 millimeter (mm).Each angle be provided with between the support 62 of semiconductor luminous assembly and load bearing seat 5 can optionally adjust separately.In other words, the angle between load bearing seat 5 and at least one support 62 can be different from the angle between load bearing seat 5 and other support 62, to reach required illumination effect, but not as limit.In addition, also the combination with the semiconductor luminous assembly of different emission wavelength range can be set in same supports or different support, make the color effect of light-emitting device abundanter.
In order to improve brightness and improve illumination effect, on the load bearing seat that a plurality of semiconductor luminous assembly with transparency carrier is arranged in such as previous embodiment by the light-emitting device of another preferred embodiment of the present invention or other load carriers, point symmetry or line symmetric arrays mode now can be taked to arrange, namely multiple semiconductor luminous assembly with transparency carrier is arranged on load carrier with the form of point symmetry or line symmetry.Please refer to Figure 26, Figure 27, Figure 28 and Figure 29, the light-emitting device of each embodiment arranges a plurality of semiconductor luminous assembly on various difform load carrier.Because be the form configuration with point symmetry or line symmetry, enable the bright dipping of light-emitting device 11 of the present invention evenly (light emitting diode construction omits signal).The light-out effect of light-emitting device 11 also can be done further adjustment again by the size changing the first above-mentioned angle and improve.As shown in figure 26, press from both sides an angle of 90 degrees arrangement each other in point symmetry mode between semiconductor luminous assembly, now at least two semiconductor luminous assemblies can just to any surface in the four sides of light-emitting device 11.As shown in figure 27, between the semiconductor luminous assembly of light-emitting device 11, angle is less than 90 degree.As shown in figure 28, the semiconductor luminous assembly of light-emitting device 11 prolongs the edge setting of load carrier 60.As shown in figure 29, between the semiconductor luminous assembly of light-emitting device, angle is greater than 90 degree.Another preferred embodiment (not being shown in figure) of the present invention, multiple semiconductor luminous assembly can asymmetric arrangement mode, and the concentrating at least partially or scattering device of multiple semiconductor luminous assembly, to reach the light shape needs of light-emitting device 11 when the different application.
Please refer to Figure 30.Figure 30 depicts the generalized section of the light-emitting device of another preferred embodiment of the present invention.As shown in figure 30, light-emitting device 301 comprises semiconductor luminous assembly 310 and support 321.Support 321 comprises breach 330, and semiconductor luminous assembly 310 is corresponding with breach 330 arranges.In the present embodiment, pin also being can be used as to outside or is bent into connection pad needed for surface soldered, to set firmly and to be electrically connected at other circuit units of support 321.The light-emitting area of semiconductor luminous assembly 310 is arranged in breach 330, no matter therefore whether support 321 is light transmissive material, light-emitting device 301 all can possess multiaspect or six luminous illumination effects.
Please refer to Figure 31, is the light-emitting device of the specific embodiment of the invention.Light-emitting device comprises tubular lampshade 7, at least one semiconductor luminous assembly 1 and load carrier 60.Semiconductor luminous assembly 1 is arranged on load carrier 60, and semiconductor luminous assembly 1 is at least partially positioned at the space that tubular lampshade 7 is formed.Refer again to the section signal of Figure 32.When multiple semiconductor luminous assembly 1 is arranged within lampshade 7, be with mode spaced apart not parallel to each other between the first first type surface 21A of each semiconductor luminous assembly 1.In addition, being arranged at least partially in space that lampshade 7 formed of multiple semiconductor luminous assembly 1, and be not close to the inwall of lampshade 7.Preferred embodiment is, the distance D between semiconductor luminous assembly 1 with lampshade 7 can be equal or be greater than 500 microns (μm); But encapsulating mode can also form lampshade 7, and make lampshade 7 coated at least partly and be directly contacted with semiconductor luminous assembly 1.
Please refer to Figure 33, Figure 33 is the schematic diagram of the semiconductor luminous assembly 1 of present pre-ferred embodiments.Compared to embodiment illustrated in fig. 10, the semiconductor luminous assembly 1 of the present embodiment comprises transparency carrier 2 and at least one light emitting diode construction 3, wherein transparency carrier 2 has extension 2e, in order to arrange one group of connecting electrode 31, light emitting diode construction 3 is arranged on position relative with connecting electrode 31 on transparency carrier 2.This group connecting electrode 31 can comprise the first connecting electrode 311A and the second connecting electrode 311B, and it is positioned at the ipsilateral of semiconductor luminous assembly 1, and in order to be electrically connected light emitting diode construction 3 and power supply.First connecting electrode 311A and the second connecting electrode 311B can be positive electrode and negative electrode respectively, in order to be electrically connected the support 62 described in various embodiments of the present invention or the counter electrode on load bearing seat/load carrier.Therefore, the side of light emitting diode construction 3 and the extended support 62 of wavelength conversion layer 4 covered on light emitting diode construction 3 or load bearing seat.And as described in the previous embodiment of the present invention, the light that light emitting diode construction 3 sends can reach multi-direction or omnidirectional illumination by transparency carrier 2.
Please refer to Figure 34 to Figure 36.Figure 34 is the schematic diagram of the light-emitting device 11 of present pre-ferred embodiments, and Figure 35 is the combination schematic diagram of the support 62 of present pre-ferred embodiments, and Figure 36 is the schematic diagram of the light-emitting device 11 of the collocation lampshade 7 of present pre-ferred embodiments.As shown in figure 34, light-emitting device 11 comprises load bearing seat 5, at least two supports 62 and to be arranged on load bearing seat 5 and coupled to each other and at least two semiconductor luminous assemblies 1 are coupled with corresponding support 62.At least one had slot 621 of those supports 62, and another support 62 can insert slot 621, thus make two supports 62 can mat slot 621 coupled to each other.In addition, as shown in figure 35, two supports 62 also can have slot 621 separately, and two supports 62 can be coupled through two slots 621 are fitted together to mutually.The top of one of them support 62 and bottom can be aligned in top and the bottom of another support 62 respectively, make two supports 62 can be symmetrical and be arranged on regularly on load bearing seat 5.
The shape of at least one support of those supports 62 can be same or similar in tabular or laminated structure, and can comprise two and be parallel to each other and smooth surface, and wherein its surface area is not less than the area of semiconductor luminous assembly 1.According to this embodiment, the surface area of support 62 is preferably the area more than three times of semiconductor luminous assembly 1, can have preferably radiating efficiency and luminous efficacy to make light-emitting device 11.A plurality of semiconductor luminous assembly 1 can in a symmetrical or asymmetric manner be arranged on corresponding support 62.Embodiment as shown in figure 34, the semiconductor luminous assembly 1 be arranged on one of them support 62 is aligned in the semiconductor luminous assembly 1 be arranged on another support 62.But according to other embodiments of the present invention, the semiconductor luminous assembly 1 be arranged on one of them support 62 also can be misaligned to the semiconductor luminous assembly 1 be arranged on another support 62, or be crisscross arranged relative to the semiconductor luminous assembly 1 on another support 62, that is the multiple semiconductor luminous assemblies 1 be arranged in different support 62 also can at random be staggered, the shade caused because of some construction unit shield light path during to compensate luminescence.As shown in figure 36, light-emitting device 11 can comprise base 64 and lampshade 7.Load bearing seat 5 is arranged on base 64.Lampshade 7 can be spherical or candle, is used for covering load bearing seat 5 and being connected to base 64.Embodiment as shown in figure 36, a plurality of semiconductor luminous assembly 1 dispersed arrangement is on multiple support 62, and each support 62 refers to toward different directions separately, therefore the light-emitting device 11 with lampshade 7 can provide omni-directional luminous lighting function equably.The luminous intensity of light-emitting device 11 can change by the quantity increasing or reduce semiconductor luminous assembly 1 and adjust.Support 62 can by heat radiation material form, be used for dissipation semiconductor luminous assembly 1 produce heat.The material of at least one support of those supports 62 is selected from materials such as printed circuit board (PCB), pottery, glass, plastics one or a combination set of.But, the material of support 62 is preferably metal core circuit board (metal core print circuit board).
Refer to Figure 37 and Figure 38, Figure 37 is the schematic diagram of the light-emitting device 11 of another preferred embodiment of the present invention, and Figure 38 is the support 62 of present pre-ferred embodiments and the combination schematic diagram of pillar 623.Compared to Figure 34 illustrated embodiment, the light-emitting device 11 of Figure 37 illustrated embodiment also comprises pillar 623, and at least one support 62 can be coupled in pillar 623.As shown in the figure, pillar 623 can comprise at least one draw-in groove 623a, and support 62 can be coupled with pillar 623 by the draw-in groove 623a inserting pillar 623.In this embodiment, a plurality of support 62 can insert corresponding draw-in groove 623a respectively and in a symmetrical or asymmetric manner be located on pillar 623, light-emitting device 11 like this can provide multidirectional light-emitting function equably.
The shape of pillar 623 can be same or similar in conduit, namely has the guide hole 623b of at least one end face being arranged on pillar 623.Fixation kit can be darted on load bearing seat 5 by the present invention, and fixation kit is inserted the guide hole 623b of pillar 623, and pillar 623 is coupled with load bearing seat 5.Structural design according to this, pillar 623 is removably coupled with load bearing seat 5, and pillar 623 can pass through and removes fixation kit and dismantle separation from load bearing seat 5 easily.Fixation kit can be connector, pipe fitting, nail, latch part, screw or nut etc., is so not limited thereto.The pillar 623 with guide hole 623b can be used to the heat of dissipation semiconductor luminous assembly 1 generation, to improve the operating characteristics of light-emitting device 11.According to certain embodiments of the invention, also can the guide hole 623b of pillar 623 deposit or the material of circulated gases or liquid form to conduct more heats, and improve the service life of light-emitting device 11.
As shown in figure 38, pillar 623 also can comprise at least one fluting 623c, is arranged at least one end face of pillar 623.Fluting 623c is connected to one end of draw-in groove 623a, uses the open space being formed and plug for support 62.Support 62 can move to be engaged in the draw-in groove 623a of pillar 623 along the radial direction of pillar 623, or moves along the axial direction of pillar 623, to move into draw-in groove 623a via fluting 623c.Therefore, light-emitting device 11 of the present invention can be changed the support 62 of damage with simple and quick assembling mode or replace the support 62 with malfunctioning semiconductor luminescence component 1.
Be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should by specification integrally, technical scheme in each execution mode also through appropriately combined, can form other execution modes that it will be appreciated by those skilled in the art that.
A series of detailed description listed is above only illustrating for feasibility execution mode of the present invention; they are also not used to limit the scope of the invention, all do not depart from the skill of the present invention equivalent implementations done of spirit or change all should be included within protection scope of the present invention.
Claims (20)
1. a light-emitting device, is characterized in that including:
Load bearing seat;
At least two supports, to be arranged on this load bearing seat and coupled to each other; And
At least two semiconductor luminous assemblies, are coupled with those supports respectively, and respectively this semiconductor luminous assembly comprises:
Transparency carrier, has the supporting surface and the second first type surface that are oppositely arranged; And
Light emitting diode construction, is arranged on this supporting surface, and wherein at least part of light sent by this light emitting diode construction can enter this transparency carrier and from this second first type surface bright dipping.
2. light-emitting device as claimed in claim 1, it is characterized in that, this transparency carrier comprises extension, is arranged on this support.
3. light-emitting device as claimed in claim 2, it is characterized in that, this light-emitting device also comprises one group of connecting electrode, and this group connecting electrode is arranged on this extension, and this group connecting electrode is electrically connected on this light emitting diode construction and this support.
4. light-emitting device as claimed in claim 1, it is characterized in that, at least one support of those supports comprises slot, and those supports are coupled to each other by this slot.
5. light-emitting device as claimed in claim 1, it is characterized in that, this light-emitting device also comprises pillar, is arranged on this load bearing seat, and wherein at least one support of those supports is coupled with this pillar.
6. light-emitting device as claimed in claim 5, it is characterized in that, this pillar comprises draw-in groove, and at least one support of those supports is coupled with this pillar by this draw-in groove.
7. light-emitting device as claimed in claim 6, it is characterized in that, this pillar comprises at least two draw-in grooves, and those supports are combined to be located on this pillar with those draw-in grooves respectively.
8. light-emitting device as claimed in claim 5, it is characterized in that, this pillar also comprises guide hole, is arranged at least one end face of this pillar.
9. light-emitting device as claimed in claim 8, it is characterized in that, this pillar is coupled with this load bearing seat by this guide hole.
10. light-emitting device as claimed in claim 6, it is characterized in that, this pillar also comprises fluting, and be arranged at least one end face of this pillar, this fluting is connected to one end of this draw-in groove.
11. light-emitting devices as claimed in claim 1, it is characterized in that, the area of at least one support of those supports is not less than the area of this semiconductor luminous assembly.
12. light-emitting devices as claimed in claim 11, is characterized in that, this area of this support is more than three times of this area of this semiconductor luminous assembly.
13. light-emitting devices as claimed in claim 1, is characterized in that, at least one support of those supports makes with metal core circuit board material.
14. light-emitting devices as claimed in claim 1, it is characterized in that, this light-emitting device also comprises:
Base, is used for carrying this load bearing seat; And
Lampshade, is arranged at this base to cover this load bearing seat, those supports and those semiconductor luminous assemblies.
15. 1 kinds of light-emitting devices, is characterized in that including:
Load bearing seat;
Pillar, is arranged at this load bearing seat;
Support, is coupled in this pillar; And
Semiconductor luminous assembly, is coupled in this support, and this semiconductor luminous assembly comprises:
Transparency carrier, has the supporting surface and the second first type surface that are oppositely arranged; And
Light emitting diode construction, is arranged on this supporting surface, and wherein at least part of light sent by this light emitting diode construction can enter this transparency carrier and from this second first type surface bright dipping.
16. light-emitting devices as claimed in claim 15, it is characterized in that, this transparency carrier comprises the extension be arranged on this support.
17. light-emitting devices as claimed in claim 16, it is characterized in that, this light-emitting device also comprises one group of connecting electrode, and this group connecting electrode is arranged on this extension, and is electrically connected on this light emitting diode construction and this support.
18. light-emitting devices as claimed in claim 15, it is characterized in that, this pillar comprises draw-in groove, and this support is coupled with this pillar by this draw-in groove.
19. light-emitting devices as claimed in claim 15, it is characterized in that, this pillar also comprises guide hole, is arranged at least one end face of this pillar.
20. light-emitting devices as claimed in claim 18, it is characterized in that, this pillar also comprises fluting, and be arranged at least one end face of this pillar, this fluting is connected to one end of this draw-in groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711053973.1A CN107845715B (en) | 2013-10-22 | 2014-09-26 | Light emitting device |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361893908P | 2013-10-22 | 2013-10-22 | |
| US61/893,908 | 2013-10-22 | ||
| US14/340,574 | 2014-07-25 | ||
| US14/340,574 US9711490B2 (en) | 2012-05-29 | 2014-07-25 | Illumination device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711053973.1A Division CN107845715B (en) | 2013-10-22 | 2014-09-26 | Light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104576878A true CN104576878A (en) | 2015-04-29 |
| CN104576878B CN104576878B (en) | 2017-11-17 |
Family
ID=52335408
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711053973.1A Active CN107845715B (en) | 2013-10-22 | 2014-09-26 | Light emitting device |
| CN201420558605.8U Active CN204118121U (en) | 2013-10-22 | 2014-09-26 | Light-emitting device |
| CN201410501090.2A Active CN104576878B (en) | 2013-10-22 | 2014-09-26 | Light-emitting device |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711053973.1A Active CN107845715B (en) | 2013-10-22 | 2014-09-26 | Light emitting device |
| CN201420558605.8U Active CN204118121U (en) | 2013-10-22 | 2014-09-26 | Light-emitting device |
Country Status (2)
| Country | Link |
|---|---|
| CN (3) | CN107845715B (en) |
| TW (2) | TWI560397B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111578169A (en) * | 2019-02-19 | 2020-08-25 | Ｆｋｋ株式会社 | Lighting device |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI560397B (en) * | 2013-10-22 | 2016-12-01 | Epistar Corp | Illumination device |
| US10101016B2 (en) * | 2015-06-08 | 2018-10-16 | Epistar Corporation | Lighting apparatus |
| CN104989982A (en) * | 2015-07-15 | 2015-10-21 | 东莞佰鸿电子有限公司 | Full-period-luminosity LED bulb |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110163683A1 (en) * | 2011-02-22 | 2011-07-07 | Quarkstar, Llc | Solid State Lamp Using Light Emitting Strips |
| CN102130239A (en) * | 2011-01-31 | 2011-07-20 | 郑榕彬 | Omnibearing lighting LED (light-emitting diode) packaging method and LED packaging part |
| CN202839730U (en) * | 2010-12-28 | 2013-03-27 | 松下电器产业株式会社 | Light emitting device, light emitting module and lamp |
| CN204118121U (en) * | 2013-10-22 | 2015-01-21 | 璨圆光电股份有限公司 | Light-emitting device |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002077519A1 (en) * | 2001-03-21 | 2002-10-03 | Supervision International, Inc. | Flexible circuit board with led lighting |
| CN1862879A (en) * | 2005-01-26 | 2006-11-15 | 内部无线公司 | Low profile antenna |
| US7847306B2 (en) * | 2006-10-23 | 2010-12-07 | Hong Kong Applied Science and Technology Research Insitute Company, Ltd. | Light emitting diode device, method of fabrication and use thereof |
| CN101299427B (en) * | 2007-04-30 | 2010-06-02 | 启萌科技有限公司 | Luminescence module |
| CN101661982B (en) * | 2008-08-26 | 2011-06-01 | 智仁科技开发股份有限公司 | LED packager |
| CN101936465B (en) * | 2009-07-01 | 2013-07-03 | 富准精密工业(深圳)有限公司 | Light-emitting diode lamp |
| KR20110099513A (en) * | 2010-03-02 | 2011-09-08 | 삼성엘이디 주식회사 | Illuminating device |
| TWM389204U (en) * | 2010-06-03 | 2010-09-21 | Liquidleds Lighting Corp | LED illumination lamp |
| TWI470164B (en) * | 2010-11-22 | 2015-01-21 | Zhejiang Ledison Optoelectronics Co Ltd | LED bulbs and can be 4π out of the LED light bar |
| TWI464868B (en) * | 2011-09-14 | 2014-12-11 | Lextar Electronics Corp | Solid state light source module and array thereof |
| US9395051B2 (en) * | 2012-04-13 | 2016-07-19 | Cree, Inc. | Gas cooled LED lamp |
| TWM453804U (en) * | 2013-01-25 | 2013-05-21 | Bo-Cheng Lin | LED bulb with multidirectional lighting |
-
2014
- 2014-09-24 TW TW103133100A patent/TWI560397B/en active
- 2014-09-24 TW TW103216980U patent/TWM498276U/en unknown
- 2014-09-26 CN CN201711053973.1A patent/CN107845715B/en active Active
- 2014-09-26 CN CN201420558605.8U patent/CN204118121U/en active Active
- 2014-09-26 CN CN201410501090.2A patent/CN104576878B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202839730U (en) * | 2010-12-28 | 2013-03-27 | 松下电器产业株式会社 | Light emitting device, light emitting module and lamp |
| CN102130239A (en) * | 2011-01-31 | 2011-07-20 | 郑榕彬 | Omnibearing lighting LED (light-emitting diode) packaging method and LED packaging part |
| US20110163683A1 (en) * | 2011-02-22 | 2011-07-07 | Quarkstar, Llc | Solid State Lamp Using Light Emitting Strips |
| CN204118121U (en) * | 2013-10-22 | 2015-01-21 | 璨圆光电股份有限公司 | Light-emitting device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111578169A (en) * | 2019-02-19 | 2020-08-25 | Ｆｋｋ株式会社 | Lighting device |
| CN111578169B (en) * | 2019-02-19 | 2022-03-08 | Ｆｋｋ株式会社 | Lighting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107845715A (en) | 2018-03-27 |
| CN204118121U (en) | 2015-01-21 |
| TWM498276U (en) | 2015-04-01 |
| TWI560397B (en) | 2016-12-01 |
| CN104576878B (en) | 2017-11-17 |
| CN107845715B (en) | 2020-08-14 |
| TW201516313A (en) | 2015-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10989396B2 (en) | Illumination device | |
| US9711490B2 (en) | Illumination device | |
| CN204118121U (en) | Light-emitting device | |
| CN203521459U (en) | Light-emitting assembly and light-emitting device | |
| TWI614886B (en) | Light-emitting device and lamp having the same | |
| CN204668357U (en) | Semiconductor light-emitting elements and light-emitting device thereof | |
| TWI533468B (en) | Light emitting element and illumination device thereof | |
| CN203948978U (en) | Light-emitting device | |
| CN204459854U (en) | Lighting device | |
| TWI570350B (en) | Illumination device | |
| CN106169467A (en) | Light-emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20161025 Address after: Taiwan, China Hsinchu Science Park Road No. five, No. 5 Applicant after: Jingyuan Optoelectronics Co., Ltd. Address before: China Longtan Taiwan Taoyuan County Rural Science and Technology Park Longtan Dragon Garden Road No. 99 Applicant before: Formosa Epitaxy Incorporation |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |