TWM498276U - Illumination device - Google Patents

Abstract

An illumination device includes a supporting base, at least two supports and at least two semiconductor light emitting elements. The supports are disposed on the supporting base and coupled to each other. The semiconductor light emitting elements are respectively coupled to the supports. The semiconductor light emitting element includes a transparent substrate and a light emitting diode (LED) structure. The transparent substrate has a support surface and a second main surface disposed opposite to each other. The LED structure is disposed on the support surface. At least a part of the light emitted from the LED structure may pass through the transparent substrate and emerge from the second main surface.

Description

Illuminating device

The present invention provides a semiconductor light emitting device and related light emitting device, and more particularly to a semiconductor light emitting device that can provide a multidirectional light source, and a light emitting device having the semiconductor light emitting device.

The light emitted by the light emitting diode (LED) itself is a directional light source, not a divergent light source like a conventional light bulb. Therefore, the LEDs are limited in application. For example, conventional light-emitting diodes are unable or difficult to achieve the desired illumination effect in general indoor/outdoor lighting applications. In addition, the conventional light-emitting diode light-emitting device can emit light only on one side, and thus its luminous efficiency is lower than that of a conventional general indoor/outdoor lighting device.

One of the objects of the present invention is to provide a semiconductor light emitting element capable of emitting a multidirectional light source and a light emitting device having the semiconductor light emitting element to solve the above problems.

One of the preferred embodiments of the present invention discloses a light emitting device comprising a carrier, at least two brackets, and at least two semiconductor light emitting elements. At least two brackets are disposed on the carrier and coupled to each other. At least two semiconductor light emitting elements are respectively coupled to the brackets. Each of the semiconductor light emitting elements includes a transparent substrate and a light emitting diode structure. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The light emitting diode structure is disposed on the support surface. At least a portion of the light emitted by the light emitting diode structure enters the transparent substrate and exits the second major surface.

In a preferred embodiment of the present invention, the transparent substrate further includes an extension portion disposed on the bracket, a set of connecting electrodes are disposed on the extension portion, and electrically connected to the LED structure and the bracket At least one bracket of the brackets further includes a slot, and the brackets are The slots are coupled to each other.

In a preferred embodiment of the present invention, the light-emitting device further includes a pillar disposed on the carrier. At least one of the brackets of the brackets is coupled to the post. The post includes a card slot, and at least one of the brackets is coupled to the post by the card slot. The struts may further include at least two card slots, and the brackets are respectively coupled with the card slots to be annularly disposed on the struts. The pillar further includes a guiding hole disposed on at least one end surface of the pillar. The post is coupled to the carrier by the via. The pillar further includes a slot disposed on at least one end surface of the pillar. The slot extends to connect to one end of the card slot.

One of the preferred embodiments of the present invention further discloses that the shape of the bracket can be the same or similar to a plate-like structure, and the bracket is made of a printed circuit board, a ceramic material, a glass material, a plastic material, or a combination thereof. Generally, the bracket is preferably made of a metal core print circuit board.

A preferred embodiment of the present invention further discloses a light emitting device comprising a carrier, a pillar, a bracket and a semiconductor light emitting component. The pillar is disposed on the carrier. The bracket is coupled to the post. The semiconductor light emitting element is coupled to the bracket. The semiconductor light emitting device comprises a transparent substrate and a light emitting diode structure. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The light emitting diode structure is disposed on the support surface. At least a portion of the light emitted by the light emitting diode structure enters the transparent substrate and exits the second major surface.

1, 310‧‧‧ semiconductor light-emitting components

1a‧‧‧First group of light-emitting elements

1b‧‧‧Second group of light-emitting elements

11, 10, 10', 50, 301, 302‧‧‧ illuminating devices

12M‧‧‧ non-planar structure

14‧‧‧Lighting diode structure

141‧‧‧Base

142‧‧‧N type semiconductor layer

143‧‧‧ active layer

144‧‧‧P type semiconductor layer

18‧‧‧Second connecting wire

2‧‧‧Transparent substrate

2e‧‧‧Extension

20‧‧‧First connecting wire

22‧‧‧Second connecting wire

210‧‧‧Support surface

21A‧‧‧ first major surface

21B‧‧‧Second major surface

23A‧‧‧Connecting wires

23B‧‧‧Second connecting wire

25, 9‧‧‧Drilling carbon film

26‧‧‧Hosting

28‧‧‧ wafer bonding layer

28A‧‧‧First wafer bonding layer

28B‧‧‧Second wafer bonding layer

3‧‧‧Lighting diode structure

30, 32‧‧‧ electrodes

31‧‧‧Connecting electrode

31A, 16‧‧‧ first electrode

31B, 18‧‧‧ second electrode

311A‧‧‧First connection electrode

311B‧‧‧Second connection electrode

322‧‧‧Device base

330‧‧‧ gap

34‧‧‧Lighting surface

341‧‧‧ bearing seat

342‧‧‧ Strip

4‧‧‧wavelength conversion layer

5, 26‧‧‧ bearing seat

5a‧‧ symmetry center

51, 62, 321‧‧‧ bracket

621‧‧‧ slots

623‧‧‧ pillar

623a‧‧‧ card slot

623b‧‧‧guide hole

623c‧‧‧ slotting

52, 63‧‧‧ component joint layer

6‧‧‧ circuit board

60‧‧‧Loading mechanism

61‧‧‧ slots

64‧‧‧Base

7‧‧‧shade

8‧‧‧ filter

Θ1‧‧‧ first angle

V+, V-‧‧‧ drive voltage

L‧‧‧Light

P‧‧‧ circuit pattern

H‧‧‧ Hole

G‧‧‧ gap

1 and 2 are schematic views showing the structure of a semiconductor light emitting element according to a preferred embodiment of the present invention.

3, 4, and 5 are schematic diagrams showing the coupling of different forms of the LED structure 3 and the wires according to a preferred embodiment of the present invention.

6 and 7 are schematic views showing the configuration of a wavelength conversion layer according to a preferred embodiment of the present invention.

Figure 8 is a cross-sectional view showing a semiconductor light emitting device according to another preferred embodiment of the present invention.

Figure 9 is a cross-sectional view showing a semiconductor light emitting device according to another preferred embodiment of the present invention.

Figure 10 is a perspective view of a semiconductor light emitting device according to another preferred embodiment of the present invention.

Figure 11 is a schematic view of a carrier of a preferred embodiment of the present invention.

Figure 12 is a schematic diagram of a circuit board of a preferred embodiment of the present invention.

Figure 13 is a schematic view of a mirror of a preferred embodiment of the present invention.

Figure 14 is a schematic view of a drilled carbon film of a preferred embodiment of the present invention.

Figure 15 is a schematic view of a light-emitting device of another preferred embodiment of the present invention.

Figure 16 is a schematic view of a light-emitting device of another preferred embodiment of the present invention.

Figure 17 is a schematic view of a light-emitting device according to another preferred embodiment of the present invention.

18, 19, and 20 are schematic views showing the transparent substrate of a preferred embodiment of the present invention inserted or joined to a carrier.

21 and 22 are schematic views showing the bonding of a transparent substrate to a holder having a holder according to a preferred embodiment of the present invention.

Figure 23 is a schematic view of a light-emitting device of another preferred embodiment of the present invention.

Figure 24 is a schematic view showing the base of the device of the light-emitting device according to another preferred embodiment of the present invention.

Figure 25 is a perspective view of a light-emitting device according to another preferred embodiment of the present invention.

26, 27, 28, and 29 are schematic views showing the transparent substrate of the preferred embodiment of the present invention disposed in a bearing mechanism in a point symmetrical or line symmetrical manner.

Figure 30 is a schematic view of a light-emitting device of another preferred embodiment of the present invention.

31 and 32 are schematic views of a lampshade according to a preferred embodiment of the present invention.

Figure 33 is a schematic view showing the semiconductor light-emitting device of the preferred embodiment.

Figure 34 is a schematic view of a light-emitting device according to another preferred embodiment of the present invention.

Figure 35 is a schematic view showing the combination of the stents of the preferred embodiment of the present invention.

Figure 36 is a schematic view of a light-emitting device with a lampshade according to a preferred embodiment of the present invention.

Figure 37 is a schematic view of a light-emitting device according to another preferred embodiment of the present invention.

Figure 38 is a schematic view showing the combination of the bracket and the pillar of the light-emitting device of the preferred embodiment.

Please refer to FIG. 1 and FIG. 2 . FIG. 1 and FIG. 2 are schematic diagrams showing the structure of a semiconductor light emitting device according to a preferred embodiment of the present invention. As shown in FIGS. 1 and 2, the semiconductor light emitting device 1 includes a transparent substrate 2, a support surface 210, a first main surface 21A, a second main surface 21B, and at least one multi-directional light emitting diode. Body structure 3. The flat or sheet-like transparent substrate 2 itself has two main surfaces, one of which is a support surface 210, and a light-emitting diode structure 3 having a light-emitting function can be disposed on the support surface 210. The light-emitting surface 34 of the light-emitting diode structure 3 that is not shielded by the transparent substrate 2 and the partial support surface 210 where the light-emitting diode structure 3 is not provided together form a first main surface 21A that can emit light. The other main surface of the transparent substrate 2 not provided with the light emitting diode structure 3 is the second main surface 21B. The foregoing arrangement may be reversed, and the light emitting diode structure 3 may be disposed on both sides of the transparent substrate 2. In one embodiment of the present invention, the LED structure 3 can be disposed on the support surface 210 of the transparent substrate 2 and interlaced with the other LED structures 3 disposed on the second main surface 21B to make the transparent substrate 2 When the light-emitting diode structure 3 on each surface emits light, the light is not blocked by the other light-emitting diode structure 3 on the other surface of the transparent substrate 2, so that the light-emitting intensity of the semiconductor light-emitting element 1 can be increased accordingly. The material of the transparent substrate 2 may include one or a combination of materials selected from alumina (Al ₂ O ₃ ) or sapphire containing alumina, cerium carbide (SiC), glass, plastic or rubber, wherein the creation One of the preferred embodiments uses a sapphire substrate as the transparent substrate 2. Since the sapphire substrate is substantially a single crystal structure, it has better light transmittance and good heat dissipation capability, and can extend the life of the semiconductor light emitting element 1. However, the use of a conventional sapphire substrate may cause fragility in the present creation. Therefore, the present invention has been experimentally verified that the transparent substrate 2 of the present invention is preferably a sapphire substrate having a thickness greater than or equal to 200 micrometers (um). Achieve better reliability, and have better load bearing and light transmission functions. In order to enable the semiconductor light-emitting element 1 to efficiently emit multi-directional light, such as bidirectional or omnidirectional light, the semiconductor light-emitting element 1 of the present invention has at least one light-emitting diode structure 3 preferably having a light-emitting angle of more than 180 degrees. Correspondingly, the LED structure 3 disposed on the transparent substrate 2 can emit light from the light emitting surface 34 toward the transparent substrate 2, and the LED structure 3 emits light at least partially into the transparent substrate 2. . The light entering the transparent substrate 2 can be emitted from the second main surface 21B of the transparent substrate 2, or the support surface 210 of the light-emitting diode structure 3 or other surface of the substrate 2 can be emitted. In this manner, the semiconductor light-emitting element 1 can emit light at least on both sides, emit light in multiple directions, or emit light in all directions. In the present creation, the area of the first major surface 21A or the area of the second major surface 21B is more than five times the sum total area of one of the light-emitting surfaces 34 of all the light-emitting diode structures 3 disposed on the surface thereof. It is a preferred arrangement ratio to conditions such as luminous efficiency and heat dissipation.

In addition, another preferred embodiment of the present invention is that the difference in color temperature between the first main surface 21A and the second main surface 21B of the semiconductor light emitting element 1 is equal to or less than 1500 K, so that the semiconductor light emitting element 1 has a uniform light emitting effect. In particular, when the thickness of the transparent substrate 2 is as described above, and the light-emitting wavelength range of the light-emitting diode structure 3 is greater than or equal to 420 nm or less than or equal to 470 nm, the light transmittance of the transparent substrate 2 may be Greater than or equal to 70%.

This creation is not limited to the above embodiments. Other preferred embodiments of the present invention will be described in the following, and in order to facilitate the comparison of the different embodiments and simplify the description, the same symbols are used to denote the same or similar elements in the following embodiments, and are mainly directed to The differences between the embodiments will be described, and the repeated portions will not be described again.

Referring to FIGS. 3, 4, and 5, the light-emitting diode structure 3 of the present invention includes a first electrode 31A and a second electrode 31B to obtain power for light emission. The first electrode 31A and the second electrode 31B are electrically connected to the first connecting wire 23A and the second connecting wire 23B on the transparent substrate 2, respectively. Among them, the third figure, the fourth figure and the fifth figure respectively disclose the coupling manner of the different forms of the light emitting diode structure 3 and the wires. 3 is a horizontal light emitting diode structure, wherein the light emitting diode structure 3 is formed on the supporting surface 210 of the transparent substrate 2, and the first electrode 31A and the second electrode 31B are electrically coupled to each other by wire bonding. The first connecting wire 23A and the second connecting wire 23B. 4 is a flip-chip LED structure 3 in which the LED structure 3 is inverted and the LED structure 3 is coupled to the transparent substrate 2 by the first electrode 31A and the second electrode 31B. The first electrode 31A and the second electrode 31B are directly coupled to the first connecting wire 23A and the second connecting wire 23B by soldering or bonding. As shown in FIG. 5, the first electrode 31A and the second electrode 31B are disposed on different sides of the light emitting diode structure 3, and the light emitting diode structure 3 is disposed in a vertical manner to make the first electrode 31A and The second electrode 31B may be connected to the first connecting wire 23A and the second connecting wire 23B, respectively.

Referring to FIGS. 6 and 7, the semiconductor light emitting device 1 of the present invention may further include a wavelength conversion layer 4 selectively disposed on the first main surface 21A or/and the second main surface 21B, or It is directly disposed on the light emitting diode structure 3. The wavelength conversion layer 4 can directly contact the light emitting diode structure 3 or be adjacent to the light emitting diode structure 3 at a distance without direct contact. The wavelength conversion layer 4 contains at least one kind of phosphor powder, such as garnet, sulfate or citrate, etc., inorganic or organic phosphor powder. The wavelength conversion layer 4 is configured to absorb light emitted by at least a portion of the LED structure 3 and converted into light of another wavelength range. For example, when the light emitting diode structure 3 emits blue light, the wavelength conversion layer 4 can convert part of the blue light to yellow light, and the semiconductor light emitting element 1 finally emits white light under the mixture of blue light and yellow light. In addition, since the light source of the first main surface 21A mainly comes from the light directly emitted by the light emitting diode structure 3, and the light source of the second main surface 21B is the light emitted from the light emitting diode structure 3 through the transparent substrate 2, Therefore, the light intensity (illuminance) of the first main surface 21A is different from the light intensity (illuminance) of the second main surface 21B. Therefore, in the semiconductor light-emitting element 1 of another preferred embodiment of the present invention, the first main surface 21A and the phosphor powder content of the wavelength conversion layer 4 disposed on the second main surface 21B are disposed correspondingly. Preferably, the ratio of the phosphor content of the wavelength conversion layer 4 disposed on the first major surface 21A to the phosphor powder content of the wavelength conversion layer 4 disposed on the second major surface 21B is preferably from 1 to 0.5 to 1 to 3, but vice versa. Thus, the illuminance or illuminating effect of the semiconductor light-emitting element 1 of the present invention can meet different application requirements, and the difference in color temperature between the first main surface 21A and the second main surface 21B of the semiconductor light-emitting element 1 can be controlled to be equal to or less than 1500K. The wavelength conversion efficiency and the light-emitting effect of the semiconductor light-emitting element 1 are improved.

Please refer to Figure 8. FIG. 8 is a cross-sectional view showing a semiconductor light emitting device according to another preferred embodiment of the present invention. As shown in FIG. 8, the semiconductor light emitting element 1 of the present embodiment includes a transparent substrate 2 and at least one light emitting diode structure 14 for providing omnidirectional light. The transparent substrate 2 has a support surface 210 and a second main surface 21B disposed opposite to each other. The light emitting diode structure 14 is disposed on the support surface 210 of the transparent substrate 2. The LED structure 14 includes a first electrode 16 and a second electrode 18 for electrically connecting other devices. The light emitting diode structure 14 is not transparent substrate 2 The shielded light emitting surface 34 forms a first major surface 21A together with a portion of the support surface 210 on which the light emitting diode structure 14 is not disposed.

The LED structure 14 can include a substrate 141, an N-type semiconductor layer 142, an active layer 143, and a P-type semiconductor layer 144. In this embodiment, the substrate 141 of the LED structure 14 can be coupled to the transparent substrate 2 by the wafer bonding layer 28. The light exiting brightness can be improved by optimizing the material properties of the wafer bonding layer 28. For example, the reflectivity of the wafer bonding layer 28 is preferably between the reflectivity of the substrate 141 and the reflectivity of the transparent substrate 2, thereby increasing the brightness of the light emitting diode structure 14. Additionally, the wafer bonding layer 28 can be a transparent adhesive or other suitable bonding material. The first electrode 16 and the second electrode 18 are disposed on the other side of the light emitting diode structure 14 opposite to the wafer bonding layer 28. The first electrode 16 and the second electrode 18 are electrically connected to the P-type semiconductor layer 144 and the N-type semiconductor layer 142, respectively (the connection relationship between the second electrode 18 and the N-type semiconductor layer 142 is not shown in FIG. 8). The horizontal standard of the upper surface of the first electrode 16 and the upper surface of the second electrode 18 is substantially the same. The first electrode 16 and the second electrode 18 may be metal electrodes, but are not limited thereto. Further, the semiconductor light emitting element 1 further includes a first connecting wire 20, a second connecting wire 22, and a wavelength conversion layer 4. The first connecting wire 20 and the second connecting wire 22 are disposed on the transparent substrate 2. The first connecting wire 20 and the second connecting wire 22 may be metal wires or other conductive patterns, but are not limited thereto. The first electrode 16 and the second electrode 18 are respectively connected to the first connecting wire 20 and the second connecting wire 22 by wire bonding or soldering, but are not limited thereto. The wavelength conversion layer 4 is disposed on the transparent substrate 2 and covers the light emitting diode structure 14. Further, the wavelength conversion layer 4 may also be disposed on the second main surface 21B of the transparent substrate 2.

In addition, in this embodiment, in order to increase the amount of light emitted from the transparent substrate 2 and to distribute the light distribution uniformly, the surface of the transparent substrate 2 may optionally be provided with the non-planar structure 12M. The non-planar structure 12M may be a variety of convex or concave geometric structures, such as pyramids, cones, hemispheres, or triangular columns, and may be arranged in a regular or random manner. Furthermore, a diamond-like carbon (DLC) film 25 may be selectively disposed on the surface of the transparent substrate 2 to increase heat conduction and heat dissipation.

Please refer to FIG. 9 , which shows a half of another preferred embodiment of the present invention. A schematic cross-sectional view of a conductor light-emitting element. In the semiconductor light-emitting device 1 of the present embodiment, the first electrode 16, the second electrode 18 and the first wafer bonding layer 28A are disposed on the same side of the light-emitting diode structure 14 as compared with the embodiment shown in FIG. . The first electrode 16 and the second electrode 18 are electrically connected to the first connecting wire 20 and the second connecting wire 22 by flip chip bonding. The first connecting wire 20 and the second connecting wire 22 may extend outward from the positions of the corresponding first electrode 16 and the second electrode 18, respectively. The first electrode 16 and the second electrode 18 can be electrically connected to the first connecting wire 20 and the second connecting wire 22 respectively by a second wafer bonding layer 28B. The second wafer bonding layer 28B may be a conductive bump, such as a gold bump or a solder bump, or a conductive paste, such as a silver paste, or a eutectic alloy layer, such as a gold-tin alloy layer (Au-Sn). Or a low melting point alloy layer (In-Bi-Sn), but is not limited thereto. In this embodiment, the first wafer bonding layer 28A can be vacant or include the wavelength conversion layer 4.

Please refer to FIG. 10, which illustrates a perspective view of a semiconductor light emitting device according to another preferred embodiment of the present invention. As shown in FIG. 10, the semiconductor light-emitting device 310 of the present invention comprises a transparent substrate 2, at least one light-emitting diode structure 3, a first connection electrode 311A, a second connection electrode 311B and at least one wavelength conversion layer 4. The light emitting diode structure 3 is disposed on the support surface 210 of the transparent substrate 2, and forms one of the first main surfaces 21A that can emit light. In this embodiment, the light-emitting diode structure 3 has an exit angle greater than 180 degrees, and at least part of the light emitted by the LED structure 3 is incident on the transparent substrate 2, and at least a portion of the incident light is correspondingly The second main surface 21B of the first main surface 21A emits light, and the remaining incident light can be emitted from other surfaces of the transparent substrate 2, thereby allowing the semiconductor light emitting element 310 to emit light in multiple directions. The first connection electrode 311A and the second connection electrode 311B are respectively disposed on different sides or the same side of the transparent substrate 2 (not shown in FIG. 10). The first connecting electrode 311A and the second connecting electrode 311B are external electrodes of the semiconductor light emitting element 310, and can be respectively formed by extending portions of one of the first connecting wires and the second connecting wires on the transparent substrate 2, so the first connecting electrode 311A and the second connection electrode 311B are electrically connected to the LED structure 3 correspondingly. The wavelength conversion layer 4 covers at least the light emitting diode structure 3 and exposes at least a portion of the first connection electrode 311A and the second connection electrode 311B. The wavelength conversion layer 4 at least partially absorbs the light emitted by the light emitting diode structure 3 and/or the transparent substrate 2, and converts it into another wavelength range. The light around. The converted light is mixed with the light that is not absorbed by the wavelength conversion layer 4 to increase the light emission wavelength range of the semiconductor light emitting element 310, and to improve the light emitting effect of the semiconductor light emitting element 310. Since the semiconductor light emitting element 310 of the present embodiment has the first connection electrode 311A and the second connection electrode 311B respectively disposed on the transparent substrate 2, the conventional light emitting diode package process can be omitted, and the semiconductor light emitting element 310 can be fabricated by itself. After that, it is combined with a suitable carrier, so that the overall manufacturing yield can be improved, the structure can be simplified, and the application range of the mating seat can be increased.

Please refer to FIG. 11 , which is a light-emitting device 11 according to an embodiment of the present invention. The light-emitting device 11 comprises a carrier 5 and a semiconductor light-emitting element as described herein. The transparent substrate 2 of the semiconductor light emitting element can be erected (or laid flat) on the carrier 5 and electrically coupled to the carrier 5 . The transparent substrate 2 and the carrier 5 have a first angle θ1, and the first angle θ1 can be fixed or varied according to the light-emitting shape of the light-emitting device. The range of the first angle θ1 is preferably between 30 degrees and 150 degrees.

Referring to FIG. 12, the carrier 5 of the illuminating device 11 of the present invention may further include a circuit board 6 electrically coupled to a power supply. The circuit board 6 is electrically coupled to the first connecting wire and the second connecting wire (not shown in FIG. 12) on the transparent substrate 2, and is electrically connected to the LED structure 3 to make the power supply permeable circuit. The board 6 provides the power required to illuminate the LED structure 3. In other preferred embodiments of the present invention, if the circuit board 6 is not provided, the LED structure 3 can be directly electrically connected to the first connecting wire and the second connecting wire (not shown in FIG. 12). The carrier 5 enables the power supply to supply power to the LED structure 3 via the carrier 5.

Referring to FIG. 13, the illumination device 11 of the present invention may further include a mirror or a filter 8 disposed on the second main surface 21B or the support surface 210 of the transparent substrate 2. The mirror or filter 8 reflects the light emitted by the LED structure 3 at least partially through the transparent substrate 2, so that a portion of the reflected light is emitted from the first main surface 21A. The mirror 8 may comprise at least one metal layer or a Bragg reflector, but is not limited thereto. The Bragg mirror may be composed of a plurality of layers of dielectric films having different refractive indices, or may have different refractive indices by multiple layers. The dielectric film is composed of a multilayer metal oxide stack.

Referring to FIG. 14 , the light-emitting device 11 of the present invention may further comprise a diamond-like carbon (DLC) film 9 , wherein the diamond-like carbon film 9 is disposed on the support surface 210 and/or the second of the transparent substrate 2 . The main surface 21B is added to increase heat conduction and heat dissipation.

Please refer to Figure 15. Figure 15 is a schematic view showing a light-emitting device of another preferred embodiment of the present invention. As shown in Fig. 15, the light-emitting device 10 of the present embodiment includes a carrier 26 and the semiconductor light-emitting element of the present invention. The semiconductor light emitting device includes a transparent substrate 2 and at least one light emitting diode structure 14. The semiconductor light emitting element can be at least partially embedded in the carrier 26. The electrodes 30 and 32 of the carrier 26 are electrically connected to the connecting wires of the semiconductor light emitting element, so that a power supply permeable electrode 30, 32 correspondingly supplies a driving voltage V+, V- to drive the light emitting diode structure 14 to emit light L. The light-emitting diode structure 14 includes a first electrode 16 and a second electrode 18, and is electrically connected to the first connecting wire 20 and the second connecting wire 22, respectively. The manner of electrical connection is not limited thereto. In addition, the light-emitting diode structure 14 has an exit angle of more than 180 degrees or has a plurality of light-emitting surfaces, so that the light-emitting device 10 can emit light from the first main surface 21A and the second main surface 21B. Furthermore, since some of the light is directly emitted from the light emitting diode structure 14 and/or from the four side walls of the transparent substrate 2, the light emitting device 10 can have multi-faceted light emission, six-sided light emission, or omnidirectional light output.

The semiconductor light-emitting element of the present invention further includes a wavelength conversion layer 4 selectively disposed on the light-emitting diode structure 14, the first main surface 21A or the second main surface 21B. The wavelength conversion layer 4 can absorb at least a portion of the light emitted by the LED structure 14 and convert it into light of another wavelength range to cause the illumination device 10 to emit light of a particular color or a wide range of wavelengths. For example, when the light emitting diode structure 14 generates blue light, part of the blue light can be converted into yellow light by the wavelength conversion layer 4, and the light emitting device 10 can emit white light mixed by blue light and yellow light. Further, the transparent substrate 2 may be directly or indirectly fixed to the carrier 26 in a parallel manner or in a non-parallel manner. For example, by directly bonding one side wall of the transparent substrate 2 to the carrier 26, the transparent substrate 2 can be fixed upright on the carrier 26 or the transparent substrate 2 can be horizontally disposed on the carrier 26, Not limited to this. The transparent substrate 2 preferably contains a material having high thermal conductivity, whereby the heat generated by the LED structure 14 can be transmitted through The bright substrate 2 is dissipated to the carrier 26, so the high-power LED structure can be applied to the light-emitting device of the present invention. In any case, in one of the preferred embodiments of the present invention, under the condition that the illuminating device has the same power consumption, a plurality of smaller power illuminating diode structures are scattered and created on the transparent substrate 12 to make full use of the transparent The heat transfer characteristics of the substrate 12, for example, the power of each of the light emitting diode structures 14 of the present embodiment may be equal to or less than 0.2 watts, but not limited thereto.

Please refer to Figure 16. Figure 16 is a schematic view showing a light-emitting device of another preferred embodiment of the present invention. Compared with the light-emitting device shown in Fig. 15, the light-emitting device 10' of the present embodiment includes a plurality of light-emitting diode structures 14, and at least a portion of the light-emitting diode structures 14 are electrically connected to each other in series. Each of the light emitting diode structures 14 includes a first electrode 16 and a second electrode 18. The first electrode 16 of one of the LED structures 14 is disposed at one end of the series and electrically connected to the first connecting wire 20, and the second electrode 18 of the other LED structure 14 is disposed in series. One end is electrically connected to the second connecting wire 22, but is not limited thereto. A plurality of light emitting diode structures 14 may be electrically connected to each other in series or in parallel. The plurality of light emitting diode structures 14 can emit the same color light, for example, all of the blue light diodes; or the plurality of light emitting diode structures 14 respectively emit different colors of light to meet different application requirements. The illuminating device 10' of the present invention can also emit a greater variety of colored lights by the wavelength converting layer 4.

Please refer to Figure 17. Figure 17 is a schematic view showing a light-emitting device of another preferred embodiment of the present invention. The light-emitting device 50 of the present embodiment further includes a bracket 51 for connecting the semiconductor light-emitting device of the present invention with the carrier 26 as compared with the light-emitting device shown in FIGS. 15 and 16. The transparent substrate 2 of the semiconductor light emitting element is fixed to one side of the holder 51 by a component bonding layer 52, and the other side of the holder 51 can be disposed or inserted into the carrier 26. In addition, the bracket 51 has elasticity to form an angle between the transparent substrate 2 and the carrier 26, and the included angle is between 30 and 150 degrees. The material of the bracket 51 may comprise a material selected from the group consisting of aluminum, copper, composite metal, wire, ceramic, printed circuit board, or other suitable material.

Referring to FIG. 18, FIG. 19 and FIG. 20, when the transparent substrate 2 of the present invention is disposed on the carrier 5, one of the preferred embodiments can be inserted or joined. The combination of the transparent substrate 2 and the carrier 5 is achieved.

As shown in FIG. 18, when the transparent substrate 2 is disposed on the carrier 5, the transparent substrate 2 is inserted into the single slot 61 of the carrier 5, and the semiconductor light emitting component is electrically coupled to the connector through the connecting wire. Slot 61. The light emitting diode structure (not shown in FIG. 18 ) on the transparent substrate 2 is electrically coupled to the power supply through the carrier 5 , and at least a portion of the conductive pattern or the connecting wire on the transparent substrate 2 is extended and connected to the transparent substrate. The edge of 2 is integrated into a gold finger structure or an electrical connection port having a plurality of conductive contacts. For example, the electrical connection port may be the aforementioned connection electrode 311A and connection electrode 311B (not shown in FIG. 18). When the transparent substrate 2 is inserted into the slot 61, the light emitting diode structure (not shown in FIG. 18) can be powered by the carrier 5, and the transparent substrate 2 can be fixedly fixed to the slot 61 of the carrier 5.

Please refer to FIG. 19 , which is a structural diagram of a plurality of slots in which the transparent substrate 2 is inserted into the carrier 5 . In this embodiment, the transparent substrate 2 has a double pin structure in which one pin can be the positive electrode of the semiconductor light emitting element and the other pin can be the negative electrode of the semiconductor light emitting element. Both pins have at least one conductive contact to serve as a connection port, respectively. Correspondingly, the carrier 5 has at least two slots 61 corresponding to the size and shape of the pin insertion surface, so that the transparent substrate 2 can be smoothly inserted into the carrier 5 and the light emitting diode structure can be powered.

Please refer to Figure 20. The transparent substrate 2 is bonded to the carrier 5 by an element bonding layer. In the bonding process, the transparent substrate 2 may be bonded or welded to the carrier 5 by using a metal material such as gold, tin, indium, antimony or silver. Alternatively, the transparent substrate 2 may be fixed to the carrier 5 by a conductive silicone or epoxy resin. In this way, the conductive pattern or the connecting wire of the semiconductor light emitting element can be electrically connected to the carrier through the component bonding layer.

Please refer to Figure 21 and Figure 22. The carrier 5 of the illuminating device 11 of the present invention may be a substrate, and the substrate material may include one selected from the group consisting of aluminum, copper, aluminum-containing composite metal, electric wire, ceramic or printed circuit board. The surface or side of the carrier 5 has at least one bracket 62. The bracket 62 is a two-unit member that can be separated from the carrier 5, or an integrated machine member. The semiconductor light emitting element is electrically coupled to the bracket 62 by means of bonding, and the component bonding layer 63 is used for transparent The substrate 2 is fixed to the carrier 5 . The carrier 5 and the transparent substrate 2 have a first included angle θ1 as described above. The surface of the carrier 5 without the support may also be provided with a semiconductor light-emitting element to enhance the light-emitting effect of the light-emitting device 11. In addition, the semiconductor light-emitting element can also be connected to the bracket 62 by plugging (not shown in FIGS. 21 and 22), that is, by using a connector to connect the semiconductor light-emitting element and the bracket (and/or the bracket and the carrier). The transparent substrate 2 is fixed to the carrier 5 . Since the carrier 5 and the bracket 62 are bendable members, the flexibility of the present invention in application is increased. At the same time, different light colors can be combined by using semiconductor light-emitting elements of different light-emitting wavelengths to cause the light-emitting device 11 to emit light. Variability to meet different needs.

Please refer to Figure 23. As shown in FIG. 23, the light-emitting device of this embodiment includes at least one semiconductor light-emitting element 1 and a carrier 5. The carrier 5 includes at least one bracket 62 and at least one circuit pattern P. One end of the transparent substrate of the semiconductor light emitting element 1 is electrically coupled to the bracket 62 to avoid or reduce the shielding effect of the bracket 62 on the light emitted from the semiconductor light emitting element 1. The carrier 5 can be selected from materials such as aluminum, copper, aluminum-containing composite metals, wires, ceramics or printed circuit boards. The bracket 62 may be formed by cutting and bending a portion of the carrier 5 at an angle (such as the first angle θ1 shown in Figs. 21 and 22). The circuit pattern P is disposed on the carrier 5, and the circuit pattern P has at least one set of electrical terminals for electrically connecting a power supply. The circuit pattern P is further extended on the bracket 62 to electrically connect the semiconductor light emitting element 1 so that the circuit pattern P of the semiconductor light emitting element 1 can be electrically connected to the power supply through the circuit pattern P of the carrier 5. In addition, the carrier 5 can further include at least one hole H or at least one notch G, such that a fixing member such as a screw, a nail or a pin can pass the hole H or the notch G to the carrier 5 and other components according to the application situation of the illuminating device. Further construction or installation. At the same time, the arrangement of the hole H or the notch G also increases the heat dissipation area of the carrier 5, thereby improving the heat dissipation effect of the light-emitting device.

Please refer to Figure 24. Figure 24 is a perspective view showing the base of the device of the light-emitting device of another preferred embodiment of the present invention. As shown in FIG. 24, the device base 322 of the present embodiment includes a carrier 5 and at least one bracket 62. Compared with the embodiment of FIG. 23, the bracket 62 of the embodiment includes at least one strip 342 and a notch 330. The electrodes 30 and 32 are respectively disposed on both sides of the notch 330, and the strip portion 342 constitutes at least one side wall of the notch 330. The semiconductor light of this creation The component is correspondingly disposed on the notch 330 and electrically coupled to the bracket 62. The connecting wires of the semiconductor light emitting elements are electrically connected to the electrodes 30, 32, so that a power supply can drive the semiconductor light emitting elements through the circuit patterns on the holder 62 and the carrier 5. The size of the notch 330 may be not less than one of the main light-emitting surfaces of the semiconductor light-emitting element, so that the light emitted from the semiconductor light-emitting element is not shielded by the holder 62. The connection between the bracket 62 and the carrier 5 can be a movable design, so that the angle between the bracket 62 and the carrier 5 can be adjusted as needed.

Please refer to Figure 24 and Figure 25. Figure 25 is a perspective view showing a light-emitting device of another preferred embodiment of the present invention. Compared to the embodiment of FIG. 24, the illuminating device 302 shown in FIG. 25 further includes at least one bracket 62 having a plurality of notches 330. A plurality of notches 330 are respectively disposed on opposite sides of the bracket 62, and the strip portions 342 constitute at least one side wall of each of the notches 330. A plurality of semiconductor light-emitting elements 310 are provided corresponding to a plurality of notches 330, and circuit patterns or connection electrodes (not shown in FIG. 25) of the respective semiconductor light-emitting elements 310 are provided correspondingly and electrically connected to the electrodes 30 and 32, respectively. The light-emitting device 302 of the present embodiment may further include a plurality of brackets 62 disposed between the semiconductor light-emitting element 1 and the carrier 5. The length of the bracket 62 can be substantially between 5.8 and 20 millimeters (mm). The angle between each of the brackets 62 provided with the semiconductor light-emitting elements and the carrier 5 can be adjusted individually as needed. In other words, the angle between the carrier 5 and the at least one bracket 62 may be different from the angle between the carrier 5 and the other brackets 62 to achieve the desired illumination effect, but not limited thereto. In addition, a combination of semiconductor light-emitting elements having different light-emitting wavelength ranges may be provided in the same bracket or different brackets to make the color effect of the light-emitting device more abundant.

In order to improve the brightness and improve the illuminating effect, the illuminating device of another preferred embodiment of the present invention is to arrange a plurality of semiconductor illuminating elements having a transparent substrate on a carrier or other supporting mechanism such as the foregoing embodiment. The points are arranged symmetrically or in a line symmetrical arrangement, that is, a plurality of semiconductor light emitting elements having a transparent substrate are disposed on the supporting mechanism in a point symmetrical or line symmetrical manner. Referring to FIGS. 26, 27, 28, and 29, the light-emitting device of each embodiment is provided with a plurality of semiconductor light-emitting elements on various load-bearing mechanisms of different shapes. Because it is arranged in the form of point symmetry or line symmetry, the light output of the illuminating device 11 of the present invention can be made uniform (light emitting diode) The structure is omitted.) The light-emitting effect of the light-emitting device 11 can be further adjusted and improved by changing the size of the first angle described above. As shown in Fig. 26, the semiconductor light-emitting elements are arranged at a 90-degree angle with each other in a point-symmetric manner, and at this time, at least two of the semiconductor light-emitting elements may face any one of the four faces of the light-emitting device 11. As shown in Fig. 27, the angle between the semiconductor light-emitting elements of the light-emitting device 11 is less than 90 degrees. As shown in Fig. 28, the semiconductor light emitting element of the light-emitting device 11 is disposed at the edge of the carrying mechanism 60. As shown in Fig. 29, the angle between the semiconductor light-emitting elements of the light-emitting device is greater than 90 degrees. In another preferred embodiment of the present invention (not shown), the plurality of semiconductor light emitting elements may be arranged asymmetrically, and at least a portion of the plurality of semiconductor light emitting elements may be concentrated or dispersed to achieve the light emitting device 11 Light shape needs for different applications.

Please refer to Figure 30. Figure 30 is a cross-sectional view showing a light-emitting device of another preferred embodiment of the present invention. As shown in FIG. 30, the light-emitting device 301 includes a semiconductor light-emitting element 310 and a holder 321 . The bracket 321 includes a notch 330, and the semiconductor light emitting element 310 is disposed corresponding to the notch 330. In this embodiment, the outer portion of the bracket 321 can also be used as a pin or bent into a pad for surface soldering to be fixed and electrically connected to other circuit components. Since one of the light-emitting surfaces of the semiconductor light-emitting element 310 is disposed in the notch 330, the light-emitting device 301 can maintain the multi-faceted or six-sided light-emitting effect regardless of whether the holder 321 is a light-transmitting material.

Please refer to FIG. 31, which is a light-emitting device according to a specific embodiment of the present invention. The illuminating device comprises a tubular lampshade 7, at least one semiconductor illuminating component 1 and a carrier mechanism 60. The semiconductor light emitting element 1 is disposed on the carrier mechanism 60, and at least a portion of the semiconductor light emitting element 1 is located in a space formed by the tubular lampshade 7. Please refer to the cross-sectional illustration of Figure 32 again. When the plurality of semiconductor light emitting elements 1 are disposed within the globe 7, the first main surfaces 21A of the respective semiconductor light emitting elements 1 are arranged apart from each other in a manner that is not parallel to each other. Further, at least a part of the plurality of semiconductor light-emitting elements 1 is disposed in the space formed by the globe 7 and does not abut against the inner wall of the globe 7. In a preferred embodiment, the distance D between the semiconductor light-emitting element 1 and the lamp cover 7 can be equal to or greater than 500 micrometers (μm); however, the lamp cover 7 can also be formed by potting, and the lamp cover 7 is at least partially covered and directly contacted. The semiconductor light emitting element 1 is used.

Please refer to FIG. 33, which is a schematic view of the semiconductor light-emitting device 1 of the preferred embodiment. Compared with the embodiment shown in FIG. 10, the semiconductor light emitting device 1 of the present embodiment includes a transparent substrate 2 and at least one light emitting diode structure 3, wherein the transparent substrate 2 has an extending portion 2e for providing a set of connecting electrodes 31. The light emitting diode structure 3 is disposed on the transparent substrate 2 at a position opposing the connection electrode 31. The set of connecting electrodes 31 may include a first connecting electrode 311A and a second connecting electrode 311B, which are located on the same side of the semiconductor light emitting element 1 and are used to electrically connect the LED structure 3 and the power source. The first connecting electrode 311A and the second connecting electrode 311B are respectively a positive electrode and a negative electrode for electrically connecting the bracket 62 or the corresponding electrode on the carrier/carrier mechanism described in the embodiments of the present invention. Therefore, the light-emitting diode structure 3 and the wavelength conversion layer 4 covering the light-emitting diode structure 3 can protrude from the side of the holder 62 or the carrier. As described in the previous creative embodiment, the light emitted by the LED structure 3 can be illuminated by the transparent substrate 2 in multiple directions or in all directions.

Please refer to Figures 34 to 36. Figure 34 is a schematic view of the light-emitting device 11 of the preferred embodiment of the present invention, Figure 35 is a schematic view showing the combination of the bracket 62 of the preferred embodiment, and Figure 36 is a view showing the illumination of the lampshade 7 according to the preferred embodiment of the present invention. A schematic representation of device 11. As shown in FIG. 34, the light-emitting device 11 includes a carrier 5, at least two brackets 62 are disposed on the carrier 5 and coupled to each other, and at least two semiconductor light-emitting elements 1 are coupled to the corresponding brackets 62. At least one of the brackets 62 may have a slot 621, and the other bracket 62 may be inserted into the slot 621 so that the two brackets 62 can be coupled to each other by the slot 621. In addition, as shown in FIG. 35, the two brackets 62 may each have a slot 621 so that the two brackets 62 can be coupled to each other through the two slots 621. The top end and the bottom end of one of the brackets 62 can be respectively aligned with the top end and the bottom end of the other bracket 62 so that the two brackets 62 can be symmetrically and regularly disposed on the carrier 5.

The at least one bracket of the brackets 62 may have the same shape or similar to a plate or sheet structure, and may include two mutually parallel and flat surfaces, wherein the surface area thereof is not less than the area of the semiconductor light emitting element 1. According to this embodiment, the surface area of the bracket 62 is preferably more than three times larger than the area of the semiconductor light emitting element 1 so that the light emitting device 11 can have better heat dissipation efficiency and Luminous performance. A plurality of semiconductor light-emitting elements 1 may be disposed on the corresponding bracket 62 in a symmetrical or asymmetric manner. As in the embodiment shown in Fig. 34, the semiconductor light emitting element 1 disposed on one of the holders 62 is aligned with the semiconductor light emitting element 1 provided on the other holder 62. However, according to other embodiments of the present invention, the semiconductor light emitting element 1 disposed on one of the holders 62 may not be aligned with the semiconductor light emitting element 1 disposed on the other holder 62, or with respect to the semiconductor light emitting element 1 on the other holder 62. The staggered arrangement, that is, the plurality of semiconductor light-emitting elements 1 disposed on the different holders 62 can also be arbitrarily staggered to compensate for shadows caused by some structural units shielding the light path during illumination. As shown in Fig. 36, the illumination device 11 can include a base 64 and a light cover 7. The carrier 5 is disposed on the base 64. The lampshade 7 can be spherical or candle-shaped for covering the carrier 5 and attached to the base 64. In the embodiment shown in Fig. 36, a plurality of semiconductor light-emitting elements 1 are dispersedly arranged on a plurality of holders 62, and each of the holders 62 is directed in a different direction, so that the light-emitting device 11 having the lampshade 7 can uniformly provide an omnidirectional direction. Slight lighting function. The light intensity of the light-emitting device 11 can be changed and adjusted by increasing or decreasing the number of the semiconductor light-emitting elements 1. The bracket 62 may be composed of a heat dissipating material for dissipating heat generated by the semiconductor light emitting element 1. The material of at least one of the brackets 62 is selected from one of a material such as a printed circuit board, ceramic, glass, plastic, or a combination thereof. However, the material of the bracket 62 is preferably a metal core print circuit board.

Please refer to FIG. 37 and FIG. 38. FIG. 37 is a schematic diagram of a light-emitting device 11 according to another preferred embodiment of the present invention. FIG. 38 is a schematic view showing the combination of the bracket 62 and the pillar 623 according to the preferred embodiment of the present invention. In contrast to the embodiment shown in FIG. 34, the illumination device 11 of the embodiment shown in FIG. 37 further includes a post 623, and at least one bracket 62 can be coupled to the post 623. As shown, the post 623 can include at least one slot 623a that enables the bracket 62 to be coupled to the post 623 by insertion of a slot 623a of the post 623. In this embodiment, a plurality of brackets 62 can be respectively inserted into the corresponding card slots 623a and ringed in the struts 623 in a symmetric manner or in an asymmetric manner, so that the light-emitting device 11 can uniformly provide the multi-directional light-emitting function.

The pillars 623 may have the same shape or similar to a conduit, that is, have a guide hole 623b disposed at at least one end surface of the pillar 623. The creation can protrude the fixing component on the carrier 5, and The fixing member is inserted into the guide hole 623b of the stay 623, and the stay 623 is coupled to the carrier 5. According to this structural design, the pillar 623 is detachably coupled to the carrier 5, and the pillar 623 can be easily detached from the carrier 5 by removing the fixing member. The fixing member may be a connector, a tube, a nail, a latch, a screw or a screw, etc., but is not limited thereto. The pillar 623 having the via hole 623b can be used to dissipate heat generated by the semiconductor light emitting element 1 to improve the operational performance of the light-emitting device 11. According to certain embodiments of the present invention, a gas or liquid type of material may also be stored or circulated in the pilot holes 623b of the post 623 to conduct more heat, thereby increasing the useful life of the light emitting device 11.

As shown in FIG. 38, the post 623 may further include at least one slot 623c disposed on at least one end surface of the post 623. The slot 623c extends to one end of the slot 623a to form an open space for the bracket 62 to be inserted. The bracket 62 is movable in the radial direction of the post 623 to be engaged with the slot 623a of the post 623 or in the axial direction of the post 623 to move into the slot 623a via the slot 623c. Therefore, the light-emitting device 11 of the present invention can replace the damaged holder 62 or replace the holder 62 having the failed semiconductor light-emitting element 1 in a simple and quick assembly manner.

1‧‧‧Semiconductor light-emitting elements

11‧‧‧Lighting device

2‧‧‧Transparent substrate

3‧‧‧Lighting diode structure

311A‧‧‧First connection electrode

311B‧‧‧Second connection electrode

4‧‧‧wavelength conversion layer

5‧‧‧ bearing seat

7‧‧‧shade

62‧‧‧ bracket

64‧‧‧Base

Claims (20)

A light-emitting device includes: a carrier; at least two brackets disposed on the carrier and coupled to each other; and at least two semiconductor light-emitting elements respectively coupled to the brackets, each semiconductor light-emitting component comprising: a transparent substrate having a supporting surface and a second main surface disposed oppositely; and a light emitting diode structure disposed on the supporting surface, wherein at least part of the light emitted by the light emitting diode structure enters the transparent substrate and is from the second The main surface is light. The illuminating device of claim 1, wherein the transparent substrate further comprises an extension disposed on the bracket. The illuminating device of claim 2, wherein a set of connecting electrodes are disposed at the extending portion, and the set of connecting electrodes are electrically connected to the illuminating diode structure and the bracket. The illuminating device of claim 1, wherein at least one of the brackets further comprises a slot, and the brackets are coupled to each other by the slot. The illuminating device of claim 1, further comprising a pillar disposed on the carrier, wherein at least one bracket of the brackets is coupled to the pillar. The illuminating device of claim 5, wherein the struts comprise a card slot, and at least one of the brackets is coupled to the struts by the card slot. The illuminating device of claim 6, wherein the pillar comprises at least two card slots, and the brackets are respectively coupled with the card slots to be looped to the pillars. The illuminating device of claim 5, wherein the pillar further comprises a guiding hole disposed on at least one end surface of the pillar. The illuminating device of claim 8, wherein the pillar is coupled to the carrier by the guide hole. The illuminating device of claim 6, wherein the pillar further comprises a slot disposed on at least one end surface of the pillar, the slot extendingly connected to one end of the card slot. The illuminating device of claim 1, wherein one of the at least one brackets of the brackets has an area not less than an area of the semiconductor light emitting element. The illuminating device of claim 11, wherein the area of the bracket is three times larger than the area of the semiconductor light emitting element. The illuminating device of claim 1, wherein at least one of the brackets is made of a metal core print circuit board material. The illuminating device of claim 1, further comprising: a base for carrying the carrier; and a lamp cover disposed on the base to cover the carrier, the brackets and the semiconductor light emitting elements. An illuminating device comprising: a carrier; a pillar disposed on the carrier; a bracket coupled to the pillar; and a semiconductor light emitting component coupled to the bracket, the semiconductor light emitting component comprising: a transparent substrate having a supporting surface and a second main surface disposed oppositely; and a light emitting diode structure disposed on the supporting surface, wherein at least part of the light emitted by the light emitting diode structure enters the transparent substrate and is from the second The main surface is light. The illuminating device of claim 15, wherein the transparent substrate further comprises an extension disposed on the bracket. The illuminating device of claim 16, wherein a set of connecting electrodes are disposed at the extending portion and electrically connected to the illuminating diode structure and the bracket. The illuminating device of claim 15, wherein the struts comprise a card slot, and the bracket is coupled to the struts by the card slot. The illuminating device of claim 15, wherein the pillar further comprises a guiding hole disposed on at least one end surface of the pillar. The light-emitting device of claim 18, wherein the pillar further comprises a slot disposed on at least one end surface of the pillar, the slot extendingly connected to one end of the card slot.