CN104576363A - Manufacturing method of high-power rectification tube core - Google Patents
Manufacturing method of high-power rectification tube core Download PDFInfo
- Publication number
- CN104576363A CN104576363A CN201510020395.6A CN201510020395A CN104576363A CN 104576363 A CN104576363 A CN 104576363A CN 201510020395 A CN201510020395 A CN 201510020395A CN 104576363 A CN104576363 A CN 104576363A
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- Prior art keywords
- silicon wafer
- described silicon
- aluminium
- manufacture method
- aluminium impurity
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 94
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 94
- 239000010703 silicon Substances 0.000 claims abstract description 94
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 73
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 72
- 238000000034 method Methods 0.000 claims abstract description 62
- 239000012535 impurity Substances 0.000 claims abstract description 56
- 238000009792 diffusion process Methods 0.000 claims abstract description 25
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 238000005516 engineering process Methods 0.000 claims abstract description 6
- 239000004411 aluminium Substances 0.000 claims description 66
- 238000000151 deposition Methods 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 12
- 239000003292 glue Substances 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 claims description 8
- 238000005260 corrosion Methods 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 3
- 239000003518 caustics Substances 0.000 claims description 3
- 238000010330 laser marking Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 8
- 230000007774 longterm Effects 0.000 abstract description 7
- 238000000227 grinding Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 150000001398 aluminium Chemical class 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Rectifiers (AREA)
Abstract
The invention discloses a manufacturing method of a high-power rectification tube core. The method comprises the steps of marking at least one face of a silicon wafer; conducting aluminum impurity doping on the surface of the silicon wafer through the aluminum pre-deposition technology; corroding the cathode face of the silicon wafer, and removing aluminum impurities on the cathode face of the silicon wafer; conducting aluminum impurity deep-junction diffusion on the anode face of the silicon wafer. By means of the manufacturing method, surface defects and micro cracks of the silicon wafer can be prevented from being generated, and therefore the finished product rate and the long-term reliability of the high-power rectification tube core can be improved.
Description
Technical field
The present invention relates to field of chip manufacture technology, particularly relate to a kind of manufacture method of power rectifier pipe tube core.
Background technology
High power device due to the electric current that passes through in the course of the work very big, the defect of minute quantity just likely causes the inefficacy of device, therefore in its manufacture process, very high to raw-material quality requirement.If raw material surface exists more defect, will cause that device creepage is excessive, blocking voltage is too low.Therefore, after silicon single crystal bar is cut into silicon single crystal disk, must meticulous grinding be carried out, also need after grinding to carry out chemical corrosion, to remove the defect of abradant surface further.Silicon single crystal wafer grinding process is extremely harsh to the requirement of milling apparatus, should ensure that silicon single crystal disk does not exist open defect in surface after grinding, ensure that the THICKNESS CONTROL of silicon single crystal disk has higher precision again, in general, thickness deviation between silicon single crystal disk is less than ± and 10 microns, therefore, the cost of this kind equipment is very expensive, causes production cost very high.
A kind of manufacture method of traditional power rectifier pipe tube core comprises: at silicon wafer surface pre-deposition aluminium impurity; Carry out aluminium impurity at the yin, yang pole-face of described silicon wafer and deeply tie diffusion; One side mill is carried out to remove unnecessary PN junction to the cathode plane of described silicon wafer; At silicon wafer surface pre-deposition phosphorus impurities; Phosphorus impurities diffusion is carried out at the cathode plane of described silicon wafer; Boron impurity diffusion is carried out at the anode surface of described silicon wafer; Aluminium lamination evaporates; Alloying; Die-size cuts; Table top moulding and protection; Irradiation.In above-mentioned manufacture process, aluminium pre-deposition technique is adulterated at the aluminium impurity that silicon wafer two-sided formation junction depth is very shallow, junction depth is less than 3 microns usually, carry out aluminium impurity depth-diffusion process immediately afterwards, positive-negative-positive vertical structure can be formed in silicon wafer, PN junction depth is some tens of pm extremely micron up to a hundred, needs to adopt one side grinding process to remove the unnecessary PN junction of chip cathode plane, makes silicon chip form PN type vertical structure.
But, the one side grinding process adopted in above-mentioned manufacture method can cause silicon wafer surface to occur a large amount of defect or fine crack, defect can cause that power rectifier pipe tube core leakage current is bigger than normal, reverse BV is on the low side, reduce the rate of finished products of tube core, in the tube core course of work, fine crack, expanding with heat and contract with cold under effect effect and can constantly increasing, finally causes component failure, reduces the long-term reliability of tube core.
Summary of the invention
For solving the problem, the invention provides a kind of manufacture method of power rectifier pipe tube core, the generation of silicon wafer blemish and fine crack can be avoided, thus rate of finished products and the long-term reliability of power rectifier pipe tube core can be improved.
The manufacture method of a kind of power rectifier pipe tube core provided by the invention, comprising:
At least one side of silicon wafer is marked;
The doping of aluminium impurity is carried out by aluminium pre-deposition technique on described silicon wafer surface;
The cathode plane of described silicon wafer is corroded, removes the aluminium impurity of the cathode plane of described silicon wafer;
Carry out aluminium impurity at described silicon wafer anode surface and deeply tie diffusion.
Preferably, in above-mentioned manufacture method, the minimizing technology of the aluminium impurity of the cathode plane of described silicon wafer is:
Protecting glue is utilized to form protection to the anode surface of described silicon wafer;
Corrosive liquid is utilized to remove the aluminium impurity of the cathode plane of described silicon wafer;
Remove described protecting glue.
Preferably, in above-mentioned manufacture method, the removal degree of depth of the aluminium impurity of the cathode plane of described silicon wafer be 5 microns to 10 microns, comprise endpoint value.
Preferably, in above-mentioned manufacture method, described corrosive liquid is acid corrosion liquid or caustic corrosion liquid.
Preferably, in above-mentioned manufacture method, described protecting glue is photoresist.
Preferably, in above-mentioned manufacture method, the anode surface of described silicon wafer or cathode plane are marked.
Preferably, in above-mentioned manufacture method, laser marking or machinery method of carving characters is utilized to mark at least one side of described silicon wafer.
Preferably, in above-mentioned manufacture method, the method for carrying out the doping of aluminium impurity by aluminium pre-deposition technique on described silicon wafer surface is:
Described silicon wafer is cleaned and dries;
Vacuum aluminum pre-deposition diffusion furnace is utilized to carry out the doping of aluminium impurity on described silicon wafer surface.
Preferably, in above-mentioned manufacture method, the method that the aluminium impurity of described silicon wafer anode surface ties diffusion is deeply:
Described silicon wafer is cleaned and dries;
Utilize aluminium to advance technique diffusion furnace to carry out aluminium impurity to described silicon wafer anode surface and deeply tie diffusion.
Known by foregoing description, in the manufacture method of a kind of power rectifier pipe tube core provided by the invention, first at least one side of silicon wafer is marked, to make anode surface and the cathode plane that can distinguish silicon wafer in workflow, then the doping of aluminium impurity is carried out on described silicon wafer surface by aluminium pre-deposition technique, now the diffusion depth of aluminium impurity is more shallow, again the cathode plane of described silicon wafer is corroded, remove the aluminium impurity of the cathode plane of described silicon wafer, then carry out follow-up aluminium impurity depth-diffusion process.So just effectively avoid the processing step of one side mill, thus avoid the generation of silicon wafer blemish and fine crack, thus rate of finished products and the long-term reliability of power rectifier pipe tube core can be improved.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments of the invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to the accompanying drawing provided.
The schematic diagram of the manufacture method of a kind of power rectifier pipe tube core that Fig. 1 provides for the embodiment of the present application.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The manufacture method of a kind of power rectifier pipe tube core that the embodiment of the present application provides as shown in Figure 1, the schematic diagram of the manufacture method of a kind of power rectifier pipe tube core that Fig. 1 provides for the embodiment of the present application.The method comprises the steps:
S1: at least one side of silicon wafer is marked;
Owing to no longer including the step of one side mill in the embodiment of the present application, therefore antianode face can not be come with the surperficial polishing scratch situation of silicon wafer again and cathode plane is effectively distinguished, therefore, need before size cutting, to take measures the cathode plane of tagging chip and anode surface, marked, for follow-up work brings convenience by writing the methods such as mark on aluminium electrode.
S2: carry out the doping of aluminium impurity by aluminium pre-deposition technique on described silicon wafer surface;
In this step, aluminium pre-deposition technique is adulterated at the aluminium impurity that silicon wafer two-sided formation junction depth is very shallow, and junction depth is less than 3 microns, therefore more easily removes.It should be noted that, step S1 and step S2 can exchange, and that is, the process of mark all can not have an impact to the present embodiment before or after can being arranged in aluminium impurity doping process.
S3: corrode the cathode plane of described silicon wafer, removes the aluminium impurity of the cathode plane of described silicon wafer;
Because the junction depth of the aluminium impurity doping of step S2 generation is very shallow, therefore, the aluminium impurity of less thickness only need be removed in this step, greatly reduce the difficulty of removal, and surface characteristic and the evenness of silicon wafer can not be affected, what is more important, so just can be removed by the mode of corrosion, thus would not there is the defect that one side grinding belt comes or crackle in silicon chip surface, thus the excellent electrology characteristic of power rectifier pipe tube core can be ensured, improve rate of finished products and the long-term reliability of power rectifier pipe tube core.
S4: carry out aluminium impurity at described silicon wafer anode surface and deeply tie diffusion.
In this step, aluminium impurity is advanced into design junction depth, wherein, this design junction depth is determined according to chip voltage grade, also along with oxidizing process in the process that this aluminium impurity advances, at the certain thickness silicon dioxide layer of silicon wafer superficial growth, this silicon dioxide layer can as the masking layer of subsequent technique.
In the manufacture method of a kind of power rectifier pipe tube core that above-described embodiment provides, first at least one side of silicon wafer is marked, to make anode surface and the cathode plane that can distinguish silicon wafer in workflow, then the doping of aluminium impurity is carried out on described silicon wafer surface by aluminium pre-deposition technique, now the diffusion depth of aluminium impurity is more shallow, again the cathode plane of described silicon wafer is corroded, remove the aluminium impurity of the cathode plane of described silicon wafer, remove the degree of depth more shallow, then carry out follow-up aluminium impurity depth-diffusion process.So just effectively avoid the processing step of one side mill, thus avoid the generation of silicon wafer blemish and fine crack, thus rate of finished products and the long-term reliability of power rectifier pipe tube core can be improved.
In above-mentioned manufacture method, the minimizing technology of the aluminium impurity of the cathode plane of described silicon wafer can be preferably:
Protecting glue is utilized to form protection to the anode surface of described silicon wafer;
Corrosive liquid is utilized to remove the aluminium impurity of the cathode plane of described silicon wafer;
Remove described protecting glue.
Above-mentioned preferred version can remove the aluminium impurity of cathode plane when antianode face forms available protecting.
In above-mentioned manufacture method, the removal degree of depth of the aluminium impurity of the cathode plane of described silicon wafer can be preferably 5 microns to 10 microns, comprises endpoint value.Reach some tens of pm even the one side mill method of up to a hundred microns relative to the removal degree of depth of the prior art, this method can select thinner silicon wafer to make power rectifier pipe tube core, and the cost of raw material of saving can reach about 15%.
In above-mentioned manufacture method, described corrosive liquid can be preferably acid corrosion liquid or caustic corrosion liquid, and described protecting glue can be preferably photoresist.This makes it possible under antianode face forms the prerequisite of effective protection, the aluminium impurity in target face carries out effectively removing fast, increases work efficiency.
In above-mentioned manufacture method, can preferably mark the anode surface of described silicon wafer or cathode plane.As long as appoint rule in advance, can effectively distinguish the anode surface of silicon wafer and cathode plane.In addition, laser marking or machinery method of carving characters preferably can be utilized to mark at least one side of described silicon wafer, this makes it possible to make mark more obvious, be convenient to identify.
In above-mentioned manufacture method, carrying out the doping of aluminium impurity on described silicon wafer surface by aluminium pre-deposition technique can be preferably:
Described silicon wafer is cleaned and dries;
Vacuum aluminum pre-deposition diffusion furnace is utilized to carry out the doping of aluminium impurity on described silicon wafer surface.
In above-mentioned manufacture method, the method that the aluminium impurity of described silicon wafer anode surface ties diffusion deeply can be preferably:
Described silicon wafer is cleaned and dries;
Utilize aluminium to advance technique diffusion furnace to carry out aluminium impurity to described silicon wafer anode surface and deeply tie diffusion.
It should be noted that; in the method making power rectifier pipe tube core; after the above step; also comprise the steps such as phosphorus pre-deposition, phosphorus propelling, boron diffusion, aluminium lamination evaporation, alloying, die-size cutting, table top moulding protection and irradiation; because these steps are consistent with step of the prior art, therefore repeat no more.
Known by foregoing description, utilize said method, the generation of silicon wafer blemish and fine crack can be avoided, thus rate of finished products and the long-term reliability of power rectifier pipe tube core can be improved, in addition, can also production cost be reduced.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (9)
1. a manufacture method for power rectifier pipe tube core, is characterized in that, comprising:
At least one side of silicon wafer is marked;
The doping of aluminium impurity is carried out by aluminium pre-deposition technique on described silicon wafer surface;
The cathode plane of described silicon wafer is corroded, removes the aluminium impurity of the cathode plane of described silicon wafer;
Carry out aluminium impurity at described silicon wafer anode surface and deeply tie diffusion.
2. manufacture method according to claim 1, is characterized in that, the minimizing technology of the aluminium impurity of the cathode plane of described silicon wafer is:
Protecting glue is utilized to form protection to the anode surface of described silicon wafer;
Corrosive liquid is utilized to remove the aluminium impurity of the cathode plane of described silicon wafer;
Remove described protecting glue.
3. the manufacture method according to any one of claim 1-2, is characterized in that, the removal degree of depth of the aluminium impurity of the cathode plane of described silicon wafer be 5 microns to 10 microns, comprise endpoint value.
4. manufacture method according to claim 2, is characterized in that, described corrosive liquid is acid corrosion liquid or caustic corrosion liquid.
5. manufacture method according to claim 2, is characterized in that, described protecting glue is photoresist.
6. manufacture method according to claim 1, is characterized in that, marks the anode surface of described silicon wafer or cathode plane.
7. manufacture method according to claim 6, is characterized in that, utilizes laser marking or machinery method of carving characters to mark at least one side of described silicon wafer.
8. manufacture method according to claim 1, is characterized in that, the method for carrying out the doping of aluminium impurity by aluminium pre-deposition technique on described silicon wafer surface is:
Described silicon wafer is cleaned and dries;
Vacuum aluminum pre-deposition diffusion furnace is utilized to carry out the doping of aluminium impurity on described silicon wafer surface.
9. manufacture method according to claim 1, is characterized in that, the method that the aluminium impurity of described silicon wafer anode surface ties diffusion is deeply:
Described silicon wafer is cleaned and dries;
Utilize aluminium to advance technique diffusion furnace to carry out aluminium impurity to described silicon wafer anode surface and deeply tie diffusion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510020395.6A CN104576363B (en) | 2015-01-15 | 2015-01-15 | A kind of production method of power rectifier pipe tube core |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510020395.6A CN104576363B (en) | 2015-01-15 | 2015-01-15 | A kind of production method of power rectifier pipe tube core |
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| CN104576363A true CN104576363A (en) | 2015-04-29 |
| CN104576363B CN104576363B (en) | 2018-08-24 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107680907A (en) * | 2016-08-01 | 2018-02-09 | 株洲中车时代电气股份有限公司 | Fast recovery diode preparation method and the fast recovery diode made by this method |
| CN109427581A (en) * | 2017-08-30 | 2019-03-05 | 株洲中车时代电气股份有限公司 | A kind of manufacturing method of power rectifier tube core |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1065951A (en) * | 1991-04-13 | 1992-11-04 | 武汉大学 | New phosphorus diffusing technique in the silicon planner technology |
| CN1464525A (en) * | 2002-06-13 | 2003-12-31 | 衡阳科晶微电子有限公司 | Substrate diffusion and furbishing process |
| US20050218430A1 (en) * | 2004-03-30 | 2005-10-06 | Ixys Corporation | Fast switching diode with low leakage current |
| CN1710707A (en) * | 2005-05-11 | 2005-12-21 | 北京京仪椿树整流器有限责任公司 | High-power quick soft-restoring diode and mfg technology thereof |
| CN101030529A (en) * | 2007-01-26 | 2007-09-05 | 吉林华微电子股份有限公司 | Production of polishing sheet single-sided main diffusion |
| CN101217173A (en) * | 2008-01-10 | 2008-07-09 | 宁波杉杉尤利卡太阳能科技发展有限公司 | A novel method of diffused layer removal on the single surface |
| CN101373717A (en) * | 2008-10-23 | 2009-02-25 | 杭州杭鑫电子工业有限公司 | Method for manufacturing transistor by thinning silicon monocrystal thin sheet prediffusion single face |
| CN102751379A (en) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | Method for fast forming P-N junctions on N-type silicon substrate |
| CN202917496U (en) * | 2012-11-12 | 2013-05-01 | 湖北台基半导体股份有限公司 | Locomotive thyristor |
-
2015
- 2015-01-15 CN CN201510020395.6A patent/CN104576363B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1065951A (en) * | 1991-04-13 | 1992-11-04 | 武汉大学 | New phosphorus diffusing technique in the silicon planner technology |
| CN1464525A (en) * | 2002-06-13 | 2003-12-31 | 衡阳科晶微电子有限公司 | Substrate diffusion and furbishing process |
| US20050218430A1 (en) * | 2004-03-30 | 2005-10-06 | Ixys Corporation | Fast switching diode with low leakage current |
| CN1710707A (en) * | 2005-05-11 | 2005-12-21 | 北京京仪椿树整流器有限责任公司 | High-power quick soft-restoring diode and mfg technology thereof |
| CN101030529A (en) * | 2007-01-26 | 2007-09-05 | 吉林华微电子股份有限公司 | Production of polishing sheet single-sided main diffusion |
| CN101217173A (en) * | 2008-01-10 | 2008-07-09 | 宁波杉杉尤利卡太阳能科技发展有限公司 | A novel method of diffused layer removal on the single surface |
| CN101373717A (en) * | 2008-10-23 | 2009-02-25 | 杭州杭鑫电子工业有限公司 | Method for manufacturing transistor by thinning silicon monocrystal thin sheet prediffusion single face |
| CN102751379A (en) * | 2012-06-20 | 2012-10-24 | 常州天合光能有限公司 | Method for fast forming P-N junctions on N-type silicon substrate |
| CN202917496U (en) * | 2012-11-12 | 2013-05-01 | 湖北台基半导体股份有限公司 | Locomotive thyristor |
Non-Patent Citations (1)
| Title |
|---|
| 上海无线电七厂: "《晶体管原理与工艺》", 31 December 1970 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107680907A (en) * | 2016-08-01 | 2018-02-09 | 株洲中车时代电气股份有限公司 | Fast recovery diode preparation method and the fast recovery diode made by this method |
| CN107680907B (en) * | 2016-08-01 | 2020-04-17 | 株洲中车时代电气股份有限公司 | Fast recovery diode manufacturing method and fast recovery diode manufactured by same |
| CN109427581A (en) * | 2017-08-30 | 2019-03-05 | 株洲中车时代电气股份有限公司 | A kind of manufacturing method of power rectifier tube core |
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| CN104576363B (en) | 2018-08-24 |
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Effective date of registration: 20201010 Address after: 412001 Room 309, floor 3, semiconductor third line office building, Tianxin hi tech park, Shifeng District, Zhuzhou City, Hunan Province Patentee after: Zhuzhou CRRC times Semiconductor Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. |