CN105576075A - Processing technology of solar cell - Google Patents
Processing technology of solar cell Download PDFInfo
- Publication number
- CN105576075A CN105576075A CN201410551314.0A CN201410551314A CN105576075A CN 105576075 A CN105576075 A CN 105576075A CN 201410551314 A CN201410551314 A CN 201410551314A CN 105576075 A CN105576075 A CN 105576075A
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- CN
- China
- Prior art keywords
- solar cell
- silicon chip
- processing technology
- back side
- silicon
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a processing technology of a solar cell. The processing technology comprises the steps of S101) slicing; S102) cleaning; S103) preparation of a texture surface; S104) phosphorus diffusion; S105) circumferential etching; S106) removing a PN+ node at the back side; S107) preparing upper and lower electrodes; S108) preparing an antireflection film; and S109) sintering in which the cell is sintered on a nickel or copper base plate. The processing technology of the solar cell is simple in processes, high in efficiency and easy to realize, and has low requirements for equipment, and the defective rate of produced solar cells is low.
Description
Technical field
The present invention relates to solar battery sheet field, particularly relate to a kind of solar cell machining process.
Background technology
The material that polycrystalline silicon solar cell uses is the aggregate containing a large amount of single crystal grain mostly, or forms with useless time single crystal silicon material and metallurgical grade silicon material fusing casting, then injects graphite casting die, after slowly solidifying cooling, obtains polycrystal silicon ingot.The castable one-tenth cube of this silicon ingot, so that slice processing squarely solar cell piece, can improve stock utilization and ease of assembly.Almost, its photoelectric conversion efficiency is about 12%, and slightly lower than single crystal silicon solar cell, but its material manufactures easy, and power consumption is low, and total production cost is lower, is therefore used widely for the manufacture craft of polycrystalline silicon solar cell and single crystal silicon solar cell.But the efficiency of traditional solar cell machining process is low, and inferior rate is higher.
Summary of the invention
The object of the invention is to, by a kind of solar cell machining process, solve the problem that above background technology part is mentioned.
For reaching this object, the present invention by the following technical solutions:
A kind of solar cell machining process, it comprises the steps:
S101, section: adopt multi-wire saw, silicon rod is cut into foursquare silicon chip;
S102, cleaning: first conventional cleaning, then removes silicon chip surface cutting damage layer with acid solution;
S103, prepare matte: with aqueous slkali, anisotropic etch is carried out to silicon chip and prepare matte at silicon chip surface;
S104, phosphorus spread: adopt coating source to spread, make PN
+knot, junction depth 0.3-0.5um;
S105, periphery etch: with sheltering wet etching or plasma dry erosion removal periphery diffusion layer;
S106, removal back side PN+ tie: with wet etching or abrasive disc method removing back side PN
+knot;
S107, making upper/lower electrode: by vacuum evaporation, chemical nickel plating or aluminium paste printing-sintering technique, first make bottom electrode, then make top electrode;
S108, making antireflective coating: with Vacuum Coating method, ion plating method, any one of sputtering method, print process, PECVD method or spraying process makes antireflective coating;
S109, sintering: battery chip is sintered on the base plate of nickel or copper.
Especially, described solar cell machining process also comprises:
S1010, test and classify: by regulation Parameter specifications, testing classification.
The process of the solar cell machining process that the present invention proposes is simple, low to the requirement of equipment, and efficiency is high, easily realizes, and the inferior rate of solar battery sheet is low.
Accompanying drawing explanation
The solar battery sheet processing process figure that Fig. 1 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.Be understandable that, specific embodiment described herein is only for explaining the present invention, but not limitation of the invention.It also should be noted that, for convenience of description, illustrate only part related to the present invention in accompanying drawing but not full content.
Please refer to shown in Fig. 1, the solar battery sheet processing process figure that Fig. 1 provides for the embodiment of the present invention.In the present embodiment, solar cell machining process specifically comprises the steps:
S101, section: adopt multi-wire saw, silicon rod is cut into foursquare silicon chip.
S102, cleaning: first conventional cleaning, then removes 30-50um with acid solution by silicon chip surface cutting damage layer.
S103, prepare matte: with aqueous slkali, anisotropic etch is carried out to silicon chip and prepare matte at silicon chip surface.
S104, phosphorus spread: adopt coating source to spread, make PN
+knot, junction depth 0.3-0.5um.
S105, periphery etch: with sheltering wet etching or plasma dry erosion removal periphery diffusion layer.
At the diffusion layer that silicon chips periphery surface is formed during diffusion, the short circuit of battery upper/lower electrode can be made, with sheltering wet etching or plasma dry erosion removal periphery diffusion layer.
S106, removal back side PN+ tie: with wet etching or abrasive disc method removing back side PN
+knot.
S107, making upper/lower electrode: by vacuum evaporation, chemical nickel plating or aluminium paste printing-sintering technique, first make bottom electrode, then make top electrode.Aluminium paste printing is a large amount of processes adopted.
S108, making antireflective coating: with Vacuum Coating method, ion plating method, any one of sputtering method, print process, PECVD method or spraying process makes antireflective coating.
S109, sintering: battery chip is sintered on the base plate of nickel or copper.
S1010, test and classify: by regulation Parameter specifications, testing classification.
Technical scheme of the present invention reduces the complexity of traditional handicraft, and process is simple, low to the requirement of equipment, and efficiency is high, easily realizes, and the inferior rate of solar battery sheet is low.
Note, above are only preferred embodiment of the present invention and institute's application technology principle.Skilled person in the art will appreciate that and the invention is not restricted to specific embodiment described here, various obvious change can be carried out for a person skilled in the art, readjust and substitute and can not protection scope of the present invention be departed from.Therefore, although be described in further detail invention has been by above embodiment, the present invention is not limited only to above embodiment, when not departing from the present invention's design, can also comprise other Equivalent embodiments more, and scope of the present invention is determined by appended right.
Claims (2)
1. a solar cell machining process, is characterized in that, comprises the steps:
S101, section: adopt multi-wire saw, silicon rod is cut into foursquare silicon chip;
S102, cleaning: first conventional cleaning, then removes silicon chip surface cutting damage layer with acid solution;
S103, prepare matte: with aqueous slkali, anisotropic etch is carried out to silicon chip and prepare matte at silicon chip surface;
S104, phosphorus spread: adopt coating source to spread, make PN
+knot, junction depth 0.3-0.5um;
S105, periphery etch: with sheltering wet etching or plasma dry erosion removal periphery diffusion layer;
S106, removal back side PN+ tie: with wet etching or abrasive disc method removing back side PN
+knot;
S107, making upper/lower electrode: by vacuum evaporation, chemical nickel plating or aluminium paste printing-sintering technique, first make bottom electrode, then make top electrode;
S108, making antireflective coating: with Vacuum Coating method, ion plating method, any one of sputtering method, print process, PECVD method or spraying process makes antireflective coating;
S109, sintering: battery chip is sintered on the base plate of nickel or copper.
2. solar cell machining process according to claim 1, is characterized in that, also comprise:
S1010, test and classify: by regulation Parameter specifications, testing classification.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410551314.0A CN105576075A (en) | 2014-10-16 | 2014-10-16 | Processing technology of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410551314.0A CN105576075A (en) | 2014-10-16 | 2014-10-16 | Processing technology of solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105576075A true CN105576075A (en) | 2016-05-11 |
Family
ID=55886001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410551314.0A Pending CN105576075A (en) | 2014-10-16 | 2014-10-16 | Processing technology of solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105576075A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108767061A (en) * | 2018-05-29 | 2018-11-06 | 顾雨彤 | A kind of solar cell fabrication process |
| CN109612129A (en) * | 2019-01-15 | 2019-04-12 | 河北道荣新能源科技有限公司 | Thin-film power generation coupling selectivity absorber coatings structure |
| CN109631352A (en) * | 2019-01-15 | 2019-04-16 | 河北道荣新能源科技有限公司 | Thin-film power generation coupling selectivity absorber coatings preparation method and its thermal-arrest regulation law |
-
2014
- 2014-10-16 CN CN201410551314.0A patent/CN105576075A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108767061A (en) * | 2018-05-29 | 2018-11-06 | 顾雨彤 | A kind of solar cell fabrication process |
| CN109612129A (en) * | 2019-01-15 | 2019-04-12 | 河北道荣新能源科技有限公司 | Thin-film power generation coupling selectivity absorber coatings structure |
| CN109631352A (en) * | 2019-01-15 | 2019-04-16 | 河北道荣新能源科技有限公司 | Thin-film power generation coupling selectivity absorber coatings preparation method and its thermal-arrest regulation law |
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| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160511 |
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| WD01 | Invention patent application deemed withdrawn after publication |