CN105514221A - Crystalline silicon solar cell manufacturing process - Google Patents
Crystalline silicon solar cell manufacturing process Download PDFInfo
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- CN105514221A CN105514221A CN201610096043.3A CN201610096043A CN105514221A CN 105514221 A CN105514221 A CN 105514221A CN 201610096043 A CN201610096043 A CN 201610096043A CN 105514221 A CN105514221 A CN 105514221A
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- carry out
- manufacturing process
- silicon chip
- silicon solar
- solar energy
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 33
- 238000009792 diffusion process Methods 0.000 claims abstract description 18
- 238000007639 printing Methods 0.000 claims abstract description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 12
- 239000011574 phosphorus Substances 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 11
- 238000012360 testing method Methods 0.000 claims abstract description 9
- 239000013078 crystal Substances 0.000 claims description 16
- 238000002360 preparation method Methods 0.000 claims description 15
- 239000006117 anti-reflective coating Substances 0.000 claims description 9
- 238000003892 spreading Methods 0.000 claims description 6
- 230000007480 spreading Effects 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 4
- 230000003628 erosive effect Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 abstract description 12
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000005245 sintering Methods 0.000 abstract description 2
- 244000144992 flock Species 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 241000931705 Cicada Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a crystalline silicon solar cell manufacturing process. The process comprises the steps that step 1, a silicon wafer is cleaned, and then a flock surface is made; step 2, cleaning is performed before diffusion, and then phosphorus diffusion is performed; step 3, peripheral etching is performed, and then back junctions are removed; step 4, back electrode printing is performed, and then positive and negative electrode printing is performed; step 5, an antireflection film is prepared, then sintering is performed, and finally testing and grading are performed. The crystalline silicon solar cell manufacturing process has the advantages of being simple and lower in production cost and enabling the cell panel quality to be better.
Description
Technical field
The present invention relates to field of petroleum machinery, particularly, relate to a kind of crystal silicon solar energy battery manufacturing process.
Background technology
Solar panel is by absorbing sunlight, solar radiation is directly or indirectly converted to the device of electric energy by photoelectric effect or Photochemical effects, the main material of major part solar panel is " silicon ", but because cost of manufacture is very large, to such an extent as to it can't extensively and at large be used in a large number.Relative to common batteries and rechargeable battery capable of circulation, solar cell belongs to the green product of more energy-conserving and environment-protective.
In the prior art, existing solar panel complex manufacturing, causes production cost higher.
In sum, present inventor, in the process realizing invention technical scheme in the embodiment of the present application, finds that above-mentioned technology at least exists following technical problem:
In the prior art, there is complex process, production cost is higher, cell panel is second-rate technical problem in existing solar cell board production technology.
Summary of the invention
The invention provides a kind of crystal silicon solar energy battery manufacturing process, solve existing solar cell board production technology and there is complex process, production cost is higher, cell panel is second-rate technical problem, achieve technique simple, production cost is lower, the good technique effect of cell panel quality.
For solving the problems of the technologies described above, the embodiment of the present application provides a kind of crystal silicon solar energy battery manufacturing process, and described technique comprises:
Step 1: cleaned by silicon chip, then carries out matte preparation;
Step 2: carry out spreading front cleaning, then carry out phosphorus diffusion;
Step 3: carry out periphery etching, then removes back of the body knot;
Step 4: carry out back electrode printing, then carries out positive antipole printing;
Step 5: carry out antireflective coating preparation, then sinter, finally carries out test and classify.
Wherein, also comprised before described step 1: adopt multi-wire saw, silicon rod is cut into foursquare silicon chip.
Wherein, described silicon chip is carried out cleaning specifically comprising: adopt ultrasonic wave to clean silicon chip, then use acid (or alkali) solution by silicon chip surface cutting damage layer removing 30-50um.
Wherein, carry out matte preparation described in be specially: carry out anisotropic etch with aqueous slkali to silicon chip and prepare matte at silicon chip surface.
Wherein, carry out phosphorus diffusion described in specifically to comprise: adopt coating source to spread, make PN+ knot, junction depth is 0.3-0.5um.
Wherein, carry out periphery etching described in be specially: with sheltering wet etching or plasma dry erosion removal periphery diffusion layer.
The one or more technical schemes provided in the embodiment of the present application, at least have following technique effect or advantage:
Owing to have employed crystal silicon solar energy battery design and manufacture technology as comprising: step 1: cleaned by silicon chip, then carry out matte preparation; Step 2: carry out spreading front cleaning, then carry out phosphorus diffusion; Step 3: carry out periphery etching, then removes back of the body knot; Step 4: carry out back electrode printing, then carries out positive antipole printing; Step 5: carry out antireflective coating preparation, then sinter, finally carry out the technical scheme of test and classify, so, efficiently solve existing solar cell board production technology and there is complex process, production cost is higher, cell panel is second-rate technical problem, and then it is simple to achieve technique, production cost is lower, the good technique effect of cell panel quality.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of crystal silicon solar energy battery manufacturing process in the embodiment of the present application one.
Embodiment
The invention provides a kind of crystal silicon solar energy battery manufacturing process, solve existing solar cell board production technology and there is complex process, production cost is higher, cell panel is second-rate technical problem, achieve technique simple, production cost is lower, the good technique effect of cell panel quality.
Technical scheme during the application implements is for solving the problems of the technologies described above.General thought is as follows:
Have employed crystal silicon solar energy battery design and manufacture technology as comprising: step 1: silicon chip is cleaned, then carrying out matte preparation; Step 2: carry out spreading front cleaning, then carry out phosphorus diffusion; Step 3: carry out periphery etching, then removes back of the body knot; Step 4: carry out back electrode printing, then carries out positive antipole printing; Step 5: carry out antireflective coating preparation, then sinter, finally carry out the technical scheme of test and classify, so, efficiently solve existing solar cell board production technology and there is complex process, production cost is higher, cell panel is second-rate technical problem, and then it is simple to achieve technique, production cost is lower, the good technique effect of cell panel quality.
In order to better understand technique scheme, below in conjunction with Figure of description and concrete execution mode, technique scheme is described in detail.
Embodiment one:
In embodiment one, provide a kind of crystal silicon solar energy battery manufacturing process, please refer to Fig. 1, described technique comprises:
Step 1: cleaned by silicon chip, then carries out matte preparation;
Step 2: carry out spreading front cleaning, then carry out phosphorus diffusion;
Step 3: carry out periphery etching, then removes back of the body knot;
Step 4: carry out back electrode printing, then carries out positive antipole printing;
Step 5: carry out antireflective coating preparation, then sinter, finally carries out test and classify.
Wherein, in the embodiment of the present application, also comprised before described step 1: adopt multi-wire saw, silicon rod is cut into foursquare silicon chip.
Wherein, in the embodiment of the present application, described silicon chip is carried out cleaning specifically comprising: adopt ultrasonic wave to clean silicon chip, then use acid (or alkali) solution by silicon chip surface cutting damage layer removing 30-50um.
Wherein, in the embodiment of the present application, carry out matte preparation described in be specially: carry out anisotropic etch with aqueous slkali to silicon chip and prepare matte at silicon chip surface.
Wherein, in the embodiment of the present application, carry out phosphorus diffusion described in specifically to comprise: adopt coating source to spread, make PN+ knot, junction depth is 0.3-0.5um.
Wherein, in the embodiment of the present application, carry out periphery etching described in be specially: with sheltering wet etching or plasma dry erosion removal periphery diffusion layer.
Concrete manufacturing process technology is described as follows: (1) cuts into slices: adopt multi-wire saw, silicon rod is cut into foursquare silicon chip.(2) clean: with the cleaning of conventional silicon wafer cleaning method, then use acid (or alkali) solution by silicon chip surface cutting damage layer removing 30-50um.(3) matte is prepared: with aqueous slkali, anisotropic etch is carried out to silicon chip and prepare matte at silicon chip surface.(4) phosphorus diffusion: employing coating source (or liquid source, or solid-state nitration phosphorus sheet source) spread, make PN+ knot, junction depth is generally 0.3-0.5um.(5) periphery etching: at the diffusion layer that silicon chips periphery surface is formed during diffusion, the short circuit of battery upper/lower electrode can be made, with sheltering wet etching or plasma dry erosion removal periphery diffusion layer.(6) remove back side PN+ to tie.Conventional wet etching or abrasive disc method removing back side PN+ tie.(7) upper/lower electrode is made: by techniques such as vacuum evaporation, chemical nickel plating or aluminium paste printing-sinterings.First make bottom electrode, then make top electrode.Aluminium paste printing is a large amount of processes adopted.(8) antireflective coating is made: in order to reduce into reflection loss, one deck antireflective coating will be covered on silicon chip surface.The material making antireflective coating has MgF2, SiO2, Al2O3, SiO, Si3N4, TiO2, Ta2O5 etc.Process vacuum available coating method, ion plating method, sputtering method, print process, PECVD method or spraying process etc.(9) sinter: battery chip is sintered on the base plate of nickel or copper.(10) test and classify: by regulation Parameter specifications, testing classification.
Technical scheme in above-mentioned the embodiment of the present application, at least has following technique effect or advantage:
Owing to have employed crystal silicon solar energy battery design and manufacture technology as comprising: step 1: cleaned by silicon chip, then carry out matte preparation; Step 2: carry out spreading front cleaning, then carry out phosphorus diffusion; Step 3: carry out periphery etching, then removes back of the body knot; Step 4: carry out back electrode printing, then carries out positive antipole printing; Step 5: carry out antireflective coating preparation, then sinter, finally carry out the technical scheme of test and classify, so, efficiently solve existing solar cell board production technology and there is complex process, production cost is higher, cell panel is second-rate technical problem, and then it is simple to achieve technique, production cost is lower, the good technique effect of cell panel quality.
Although describe the preferred embodiments of the present invention, those skilled in the art once obtain the basic creative concept of cicada, then can make other change and amendment to these embodiments.So claims are intended to be interpreted as comprising preferred embodiment and falling into all changes and the amendment of the scope of the invention.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (6)
1. crystal silicon solar energy battery manufacturing process, is characterized in that, described technique comprises:
Step 1: cleaned by silicon chip, then carries out matte preparation;
Step 2: carry out spreading front cleaning, then carry out phosphorus diffusion;
Step 3: carry out periphery etching, then removes back of the body knot;
Step 4: carry out back electrode printing, then carries out positive antipole printing;
Step 5: carry out antireflective coating preparation, then sinter, finally carries out test and classify.
2. crystal silicon solar energy battery manufacturing process according to claim 1, is characterized in that, also comprises before described step 1: adopt multi-wire saw, silicon rod is cut into foursquare silicon chip.
3. crystal silicon solar energy battery manufacturing process according to claim 1, it is characterized in that, described silicon chip is carried out cleaning specifically comprising: adopt ultrasonic wave to clean silicon chip, then use acid (or alkali) solution by silicon chip surface cutting damage layer removing 30-50um.
4. crystal silicon solar energy battery manufacturing process according to claim 1, is characterized in that, described in carry out matte preparation be specially: with aqueous slkali, anisotropic etch is carried out to silicon chip and prepares matte at silicon chip surface.
5. crystal silicon solar energy battery manufacturing process according to claim 1, is characterized in that, described in carry out phosphorus diffusion specifically comprise: adopt coating source spread, make PN+ knot, junction depth is 0.3-0.5um.
6. crystal silicon solar energy battery manufacturing process according to claim 1, is characterized in that, described in carry out periphery etching be specially: with sheltering wet etching or plasma dry erosion removal periphery diffusion layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610096043.3A CN105514221A (en) | 2016-02-22 | 2016-02-22 | Crystalline silicon solar cell manufacturing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610096043.3A CN105514221A (en) | 2016-02-22 | 2016-02-22 | Crystalline silicon solar cell manufacturing process |
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| CN105514221A true CN105514221A (en) | 2016-04-20 |
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| CN201610096043.3A Pending CN105514221A (en) | 2016-02-22 | 2016-02-22 | Crystalline silicon solar cell manufacturing process |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108847430A (en) * | 2018-06-11 | 2018-11-20 | 佛山市长富制版科技有限公司 | A kind of screen printing process on photovoltaic battery panel |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299198A (en) * | 2011-05-27 | 2011-12-28 | 中山大学 | Process for manufacturing silicon ribbon solar cell |
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2016
- 2016-02-22 CN CN201610096043.3A patent/CN105514221A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299198A (en) * | 2011-05-27 | 2011-12-28 | 中山大学 | Process for manufacturing silicon ribbon solar cell |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108847430A (en) * | 2018-06-11 | 2018-11-20 | 佛山市长富制版科技有限公司 | A kind of screen printing process on photovoltaic battery panel |
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Application publication date: 20160420 |