CN105206628A - Manufacturing method for large-diameter multi-quadrant photoelectric detector - Google Patents
Manufacturing method for large-diameter multi-quadrant photoelectric detector Download PDFInfo
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- CN105206628A CN105206628A CN201510645594.6A CN201510645594A CN105206628A CN 105206628 A CN105206628 A CN 105206628A CN 201510645594 A CN201510645594 A CN 201510645594A CN 105206628 A CN105206628 A CN 105206628A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a manufacturing method for a large-diameter multi-quadrant photoelectric detector. The manufacturing method includes the steps that multi-quadrant photoelectric detector chips are manufactured according to a first method; the multi-quadrant photoelectric detector chips are detected to find out unqualified quadrants on the multi-quadrant photoelectric detector chips; the unqualified quadrants on the multi-quadrant photoelectric detector chips are cut off by adopting cutting operation, and the multi-quadrant photoelectric detector chips with the unqualified quadrants cut off are marked as defect parts; qualified quadrants are used for being spliced with the defect parts to obtain complete multi-quadrant photoelectric detector chips again. The manufacturing method has the advantages that the large-diameter high-performance multi-quadrant photoelectric detector used for guidance can be manufactured in a splicing mode, overall scrap, caused by partial quadrant defects, of the multi-quadrant photoelectric detector is avoided, the finished product rate and the superior product rate are increased, and production cost is reduced.
Description
Technical field
The present invention relates to a kind of photodetector manufacturing technology, particularly relate to a kind of major diameter many quadrant photodetectors manufacture method.
Background technology
Many quadrant photodetectors generally comprise 4 quadrant detector, eight quadrants (double four quadrant photoelectric) detector, linear array detector and detector array, it is photosensitive typically has a diameter from 10 ~ 16mm, but along with engineering field is to the raising of requirement on devices, develop again the detector that photosensitive diameter reaches 24mm at present;
It will be apparent to those skilled in the art that based on existing process conditions, in large-scale production process; the area of chip is larger; its rate of finished products is just corresponding lower, and under current process conditions, the contradiction between chip area increase and rate of finished products reduce is implacable in a short time.
Because chip manufacturing cost is higher, if because local quadrant existing defects is just by comparatively large for the waste of the way of whole chip rejection, and along with the increase of the photosensitive diameter of chip, the waste caused because of chip rejection is also corresponding larger; In order to solve waste problem, the comparatively effective means of one are: excised from chip by the quadrant of existing defects, and then next with satisfactory quadrant and after cutting chip splices, and avoids scrapping whole for chip, cuts the waste;
For the detector that some low performances require, aforementioned thinking be can yet be regarded as a kind of means well reduced costs, but for the detector of some high performance requirements, such as laser-guided four-quadrant or eight quadrant photodetectors, if merely adopt foregoing approach to splice, the device obtained just can not meet the demands completely, the reason of this problem is caused to be: high-responsivity is one of prerequisite performance of high-performance detector institute, in conventional fabrication process, high-responsivity is possessed in order to make device, the thickness of General Requirements having lateral depletion layer reaches certain numerical value, when carrying out cutting splicing to this kind of chip, in order to ensure that having lateral depletion layer possesses necessary thickness, interval between cutting section and pn tie needs to reach more than 350 μm and is just unlikely and injures pn and tie, the interval summation of both sides, stitching portion will reach more than 700 μm, when spliced device is devoted oneself to work, the interval of aforesaid 700 μm will form the photoelectricity blind area (engineering field requires general at about 200 μm for the photoelectricity blind area of guidance photodetector) of 700 μm of width on device, the photoelectricity blind area of 700 μm not only can cause light energy heavy losses, but also can error code be caused, even miss the target, so aforesaid splicing means can not directly be applied on the higher guidance photoelectric detector chip of performance requirement.
Summary of the invention
Before proposition the present invention, inventor once proposed another invention, the patent No. is: 201010622540, this invention proposes a kind of non-blind area, without the silicon quadrant photodetector manufacture method of photoelectricity crosstalk, its technological core is: arrange a circumpolar in periphery, photosensitive area and tie the horizontal potential barrier of sidewall to form photosensitive area pn, longitudinal potential barrier (potential barrier also namely formed by backside depletion layer) that this photosensitive area pn ties the horizontal potential barrier of sidewall and chip back connects and composes one by lead-in wire, photosensitive first transverse electric field of each quadrant is stopped at circumpolar place, solve in prior art to need to increase between quadrant and isolate the problem that width could realize effectively isolation, after aforementioned invention proposes, inventor conducts in-depth research it again, and find, adopting the device that aforementioned techniques is produced, realizing isolation, therefore when cutting it owing to not needing to rely on thicker isolation width, do not need to retain larger thickness in quadrant periphery, extremely be suitable for carrying out quadrant splicing, so the present invention has just arisen at the historic moment, its concrete scheme has been:
A kind of major diameter many quadrant photodetectors manufacture method, its innovation is: (A) produces many quadrant photodetectors chip by method one, (B) many quadrant photodetectors chip is detected, find out the defective quadrant on many quadrant photodetectors chip, (C) cutting operation is adopted to be excised from many quadrant photodetectors chip by defective quadrant, the many quadrant photodetectors chip having excised defective quadrant is designated as defect part, (D) adopt qualified quadrant and defect part to splice, regain complete many quadrant photodetectors chip;
Described method one comprises: 1) provide silicon substrate; 2) at surface of silicon growth SiO
2layer; 3) boron diffusion region is carved at silicon substrate front lighting; 4) boron diffusion is carried out to boron diffusion region, form photosensitive area; 5) at silicon substrate front deposit growth Si3N4 layer, then phosphorus diffusion region is carved at silicon substrate front lighting; Described phosphorus diffusion region is positioned at around photosensitive area, and the profile of phosphorus diffusion region and photosensitive area outline, leave interval between phosphorus diffusion region and photosensitive area; 6) attenuated polishing process is carried out to the silicon substrate back side; 7) phosphorus diffusion process is carried out to phosphorus diffusion region, form circumpolar; Phosphorus diffusion process is carried out to the silicon substrate back side, forms n
+contact layer; 8) in surface of silicon growth oxide layer; 9) on photosensitive area, make electrode hole by lithography, meanwhile, above circumpolar, make the groove with circumpolar outline by lithography, then remove the oxide layer at the silicon substrate back side, 10) at the front and back evaporation electrode metal level of silicon substrate; 11) etch formation metal electrode and surface metal-layer respectively to the electrode metal layer in silicon substrate front, described metal electrode is positioned at electrode hole, and described surface metal-layer is positioned at the groove above circumpolar; 12) by lead-in wire, the electrode metal of surface metal-layer with the silicon substrate back side is connected;
The diameter of described many quadrant photodetectors is 16 ~ 24mm; On many quadrant photodetectors, the interval between two adjacent in the circumferential photosensitive areas is less than or equal to 150 μm; Described many quadrant photodetectors are used for laser guidance field; Be spaced apart 30 μm between two adjacent in the circumferential circumpolars, be spaced apart 300 μm between photosensitive area with corresponding circumpolar, circumpolar width is 60 μm; In step (C), the thickness of cutting operation cutting knife used is 30 μm, and otch during cutting operation is between adjacent two circumpolars.
Principle of the present invention is: have benefited from aforesaid in first technology, after adopting this technology, significantly can reduce the spacing distance between quadrant, by controlling the interval between two circumpolars in manufacturing process, make the spacing distance between two circumpolars identical with the thickness of cutting knife, in follow-up cutting technique, region beyond circumpolar can all be cut only by the otch formed by cutting operation (adopts the detector produced of common process when splicing, need the integrity retaining larger thickness guarantee having lateral depletion layer in its quadrant periphery), after splicing, spacing distance between quadrant is almost unchanged, spliced photodetector is made also to have good performance.
Preferably, the quadrant quantity of described many quadrant photodetectors is four or eight.
Advantageous Effects of the present invention is: make major diameter, the many quadrant photodetectors of high performance guidance can adopt connecting method to make, entirety is scrapped because of local quadrant defect to avoid many quadrant photodetectors, thus improve rate of finished products and quality product rate, reduce production cost.
Accompanying drawing explanation
Fig. 1, the structural profile schematic diagram (region in figure between two dotted lines is incision site during cutting) of photodetector for cutting;
In figure each mark corresponding to title be respectively: SiO
2layer 1, substrate 2, P
+-Si layer 3, Si3N4 layer 4, circumpolar 5, surface metal-layer 6, metal electrode 7, n
+the electrode metal 9 at contact layer 8, the silicon substrate back side, wire 10 for the electrode metal at connecting surface metal level and the silicon substrate back side.
Embodiment
A kind of major diameter many quadrant photodetectors manufacture method, its innovation is: (A) produces many quadrant photodetectors chip by method one, (B) many quadrant photodetectors chip is detected, find out the defective quadrant on many quadrant photodetectors chip, (C) cutting operation is adopted to be excised from many quadrant photodetectors chip by defective quadrant, the many quadrant photodetectors chip having excised defective quadrant is designated as defect part, (D) adopt qualified quadrant and defect part to splice, regain complete many quadrant photodetectors chip;
Described method one comprises: 1) provide silicon substrate; 2) at surface of silicon growth SiO
2layer; 3) boron diffusion region is carved at silicon substrate front lighting; 4) boron diffusion is carried out to boron diffusion region, form photosensitive area; 5) at silicon substrate front deposit growth Si3N4 layer, then phosphorus diffusion region is carved at silicon substrate front lighting; Described phosphorus diffusion region is positioned at around photosensitive area, and the profile of phosphorus diffusion region and photosensitive area outline, leave interval between phosphorus diffusion region and photosensitive area; 6) attenuated polishing process is carried out to the silicon substrate back side; 7) phosphorus diffusion process is carried out to phosphorus diffusion region, form circumpolar; Phosphorus diffusion process is carried out to the silicon substrate back side, forms n
+contact layer; 8) in surface of silicon growth oxide layer; 9) on photosensitive area, make electrode hole by lithography, meanwhile, above circumpolar, make the groove with circumpolar outline by lithography, then remove the oxide layer at the silicon substrate back side, 10) at the front and back evaporation electrode metal level of silicon substrate; 11) etch formation metal electrode and surface metal-layer respectively to the electrode metal layer in silicon substrate front, described metal electrode is positioned at electrode hole, and described surface metal-layer is positioned at the groove above circumpolar; 12) by lead-in wire, the electrode metal of surface metal-layer with the silicon substrate back side is connected;
The diameter of described many quadrant photodetectors is 16 ~ 24mm; On many quadrant photodetectors, the interval between two adjacent in the circumferential photosensitive areas is less than or equal to 150 μm; Described many quadrant photodetectors are used for laser guidance field; Be spaced apart 30 μm between two adjacent in the circumferential circumpolars, be spaced apart 300 μm between photosensitive area with corresponding circumpolar, circumpolar width is 60 μm; In step (C), the thickness of cutting operation cutting knife used is 30 μm, and otch during cutting operation is between adjacent two circumpolars.
Further, the quadrant quantity of described many quadrant photodetectors is four or eight.
Claims (2)
1. major diameter many quadrant photodetectors manufacture method, it is characterized in that: (A) produces many quadrant photodetectors chip by method one, (B) many quadrant photodetectors chip is detected, find out the defective quadrant on many quadrant photodetectors chip, (C) cutting operation is adopted to be excised from many quadrant photodetectors chip by defective quadrant, the many quadrant photodetectors chip having excised defective quadrant is designated as defect part, (D) qualified quadrant and defect part is adopted to splice, regain complete many quadrant photodetectors chip,
Described method one comprises: 1) provide silicon substrate; 2) at surface of silicon growth SiO
2layer; 3) boron diffusion region is carved at silicon substrate front lighting; 4) boron diffusion is carried out to boron diffusion region, form photosensitive area; 5) at silicon substrate front deposit growth Si3N4 layer, then phosphorus diffusion region is carved at silicon substrate front lighting; Described phosphorus diffusion region is positioned at around photosensitive area, and the profile of phosphorus diffusion region and photosensitive area outline, leave interval between phosphorus diffusion region and photosensitive area; 6) attenuated polishing process is carried out to the silicon substrate back side; 7) phosphorus diffusion process is carried out to phosphorus diffusion region, form circumpolar; Phosphorus diffusion process is carried out to the silicon substrate back side, forms n
+contact layer; 8) in surface of silicon growth oxide layer; 9) on photosensitive area, make electrode hole by lithography, meanwhile, above circumpolar, make the groove with circumpolar outline by lithography, then remove the oxide layer at the silicon substrate back side, 10) at the front and back evaporation electrode metal level of silicon substrate; 11) etch formation metal electrode and surface metal-layer respectively to the electrode metal layer in silicon substrate front, described metal electrode is positioned at electrode hole, and described surface metal-layer is positioned at the groove above circumpolar; 12) by lead-in wire, the electrode metal of surface metal-layer with the silicon substrate back side is connected;
The diameter of described many quadrant photodetectors is 16 ~ 24mm; On many quadrant photodetectors, the interval between two adjacent in the circumferential photosensitive areas is less than or equal to 150 μm; Described many quadrant photodetectors are used for laser guidance field; Be spaced apart 30 μm between two adjacent in the circumferential circumpolars, be spaced apart 300 μm between photosensitive area with corresponding circumpolar, circumpolar width is 60 μm; In step (C), the thickness of cutting operation cutting knife used is 30 μm, and otch during cutting operation is between adjacent two circumpolars.
2. major diameter many quadrant photodetectors manufacture method according to claim 1, is characterized in that: the quadrant quantity of described many quadrant photodetectors is four or eight.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107894693A (en) * | 2017-12-20 | 2018-04-10 | 苏州工业园区纳米产业技术研究院有限公司 | A kind of large size chip exposure method |
| CN110364590A (en) * | 2019-07-09 | 2019-10-22 | 武汉光谷量子技术有限公司 | A kind of optical detector and its manufacturing method of high gain-bandwidth product |
| CN112054075A (en) * | 2020-07-31 | 2020-12-08 | 重庆鹰谷光电股份有限公司 | Ultra-high precision silicon quadrant photoelectric detector |
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| US20070080285A1 (en) * | 2005-09-08 | 2007-04-12 | Rafael-Armament Development Authority Ltd. | Arrangement for increasing the fill factor in a four-quadrant-type detector |
| CN102569310A (en) * | 2010-12-31 | 2012-07-11 | 重庆鹰谷光电有限公司 | Making method of silicon quadrant photoelectric detector without blind region and photoelectric crosstalk |
| CN203535243U (en) * | 2013-10-30 | 2014-04-09 | 中国电子科技集团公司第四十四研究所 | Double-four-quadrant laser detector assembly |
| US20140361190A1 (en) * | 2013-06-10 | 2014-12-11 | University Of Tennessee Research Foundation | System and Method for Detecting and Positioning A Radioactive Source |
| CN106595478A (en) * | 2016-12-09 | 2017-04-26 | 北京无线电计量测试研究所 | Light spot position detector |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH09101283A (en) * | 1995-10-03 | 1997-04-15 | Nippon Telegr & Teleph Corp <Ntt> | Electrochemical detector and its manufacture |
| US20070080285A1 (en) * | 2005-09-08 | 2007-04-12 | Rafael-Armament Development Authority Ltd. | Arrangement for increasing the fill factor in a four-quadrant-type detector |
| CN102569310A (en) * | 2010-12-31 | 2012-07-11 | 重庆鹰谷光电有限公司 | Making method of silicon quadrant photoelectric detector without blind region and photoelectric crosstalk |
| US20140361190A1 (en) * | 2013-06-10 | 2014-12-11 | University Of Tennessee Research Foundation | System and Method for Detecting and Positioning A Radioactive Source |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107894693A (en) * | 2017-12-20 | 2018-04-10 | 苏州工业园区纳米产业技术研究院有限公司 | A kind of large size chip exposure method |
| CN110364590A (en) * | 2019-07-09 | 2019-10-22 | 武汉光谷量子技术有限公司 | A kind of optical detector and its manufacturing method of high gain-bandwidth product |
| CN112054075A (en) * | 2020-07-31 | 2020-12-08 | 重庆鹰谷光电股份有限公司 | Ultra-high precision silicon quadrant photoelectric detector |
| CN112054075B (en) * | 2020-07-31 | 2023-01-06 | 重庆鹰谷光电股份有限公司 | Ultra-high precision silicon quadrant photoelectric detector |
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