CN104868017A - GaAs cell laser processing method - Google Patents
GaAs cell laser processing method Download PDFInfo
- Publication number
- CN104868017A CN104868017A CN201510292041.7A CN201510292041A CN104868017A CN 104868017 A CN104868017 A CN 104868017A CN 201510292041 A CN201510292041 A CN 201510292041A CN 104868017 A CN104868017 A CN 104868017A
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- CN
- China
- Prior art keywords
- laser processing
- gallium arsenide
- laser
- metal substrate
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 52
- 238000003672 processing method Methods 0.000 title abstract 2
- 238000002955 isolation Methods 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 12
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 33
- 238000005520 cutting process Methods 0.000 claims description 16
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000000428 dust Substances 0.000 claims description 3
- 239000002912 waste gas Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 238000003698 laser cutting Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000002679 ablation Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910001651 emery Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention provides a GaAs cell laser processing method, which can be applied to the field of GaAs cell processing. A GaAs wafer is cut to form multiple GaAs cells. Firstly, ultraviolet laser is adopted to process the GaAs layer so as to form multiple isolation grooves; and then, ultraviolet laser is adopted to extend the isolation grooves for at least one time, a metal substrate is processed until the metal substrate is cut off, and multiple sub cells are generated. According to the embodiment of the invention, ultraviolet laser is adopted to cut the GaAs wafer in two steps, isolation grooves with small widths are firstly formed, the isolation grooves are then extended and processed, and finally multiple chips are finally formed. as the width of the isolation groove is reduced, the number of sub cells generated by the single wafer is increased, and the production cost is reduced. In addition, the ultraviolet laser is adopted for processing, influences of thermal effects on the chips are avoided, and the yield is improved.
Description
Technical field
The invention belongs to field of laser processing, particularly relate to a kind of laser processing of gallium arsenide cells.
Background technology
Solar energy power generating obtains tremendous development in the whole world, but typical thin films cells convert rate is lower, crystal silicon battery is due to raw material supply price rising all the way limited in one's ability, due to high concentrating solar battery, to have conversion ratio high, the advantage that battery floor space is little and consumptive material is few, is subject to the attention of researcher.Wherein, what high power concentrator battery was representative is GaAs (GaAs) solar cell.GaAs belongs to Group III-V compound semiconductor material, and its energy gap is more applicable with mating of solar spectrum, and high temperature resistant.
Gallium arsenide wafer, because material is more crisp, when adopting mechanical cutting blade cutting, easily breaks or defect, so be difficult to the feed speed improving cutting, and mechanical cutting blade quick abrasion, require uninterruptedly to spray deionized water to emery wheel and chip in cutting process, production cost is high; During machine cuts, blade directly contacts with chip, and sides of chip easily produces and collapses limit, collapses angle and crackle, and conforming product rate is low.If utilize laser cutting technique, processing feed speed can reach more than 10 times of emery wheel blade cuts feed speed, thus enhances productivity.Adopt laser cutting parameter, the cutting groove width after processing is little, and cutting groove loss is few compared with blade, so can reduce the interval of chip chamber.For in order to cut out for compound semiconductor wafer that more small chips cause processing line number to increase, by reducing the interval of chip chamber, producible number of chips in single piece of wafer can be improved.But also there are some problems in traditional laser cutting gallium arsenide wafer method, such as laser cutting produces thermal effect region, not only raw material can be destroyed, even can destroy the chip structure that cut place is contiguous, chip quality is impacted, when the width of cutting groove is less, it is also larger that contiguous chip is subject to thermal impact.
Summary of the invention
The object of the embodiment of the present invention is the laser processing providing a kind of gallium arsenide cells, the problem that existing laser processing thermal impact is large to solve, the number of chips of single wafer cutting is few.
The embodiment of the present invention is achieved in that a kind of laser processing of gallium arsenide cells, forms gallium arsenide cells, adopt Ultra-Violet Laser to process described GaAs layer, form multiple isolation channel by carrying out cutting to gallium arsenide wafer; Adopt Ultra-Violet Laser to prolong described isolation channel to process described metal substrate at least one times, until described metal substrate cut off, produce multiple sub-battery.
Further, the pulsewidth of described Ultra-Violet Laser is 20-60ns, power≤10W.
Further, add man-hour to described GaAs layer, speed is 100-200mm/s, and frequency is 20-30KHz, and power is 7W.
Further, add man-hour to described metal substrate, speed is 200-300mm/s, and frequency is 20-30KHz, and power is 10W.
Further, described Ultra-Violet Laser is focused on by telecentric lens.
Further, described gallium arsenide wafer adopts the grid palisade frock clamp absorption with hollow out fixing.
Further, the residue adopting while to described gallium arsenide wafer laser processing dust cleaning apparatus to produce laser processing or waste gas extract.
The invention provides the laser processing of gallium arsenide cells, in two steps gallium arsenide wafer is cut by Ultra-Violet Laser, first form the less isolation channel of width, then prolong isolation channel and process, the multiple chip of final formation, owing to reducing the width of isolation channel, add the quantity of the single piece of sub-battery of wafer manufacture, reduce production cost, simultaneously, adopt Ultra-Violet Laser to process, avoid the impact of thermal effect on chip, improve yields.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the generalized section of the gallium arsenide cells processing that the embodiment of the present invention provides;
Fig. 2 is the schematic diagram of the GaAs layer processing of the gallium arsenide cells that the embodiment of the present invention provides.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
As shown in Figure 1, the GaAs layer 12 that gallium arsenide wafer comprises metal substrate 11 and is positioned in described metal substrate, by carrying out cutting and separating to described gallium arsenide wafer, to produce multiple little chip, each little chip is gallium arsenide cells, and the chip of one piece of gallium arsenide wafer cutting is more, cost is just relatively less, and the size of chip is generally relatively fixing, in order to more chip can be cut on single piece of wafer, just need the width reducing cutting groove.
As shown in Figure 2, the embodiment of the present invention provides a kind of laser processing of gallium arsenide cells, adopts Ultra-Violet Laser to process in two steps described gallium arsenide wafer, the first step, described GaAs layer 12 is processed, forms multiple isolation channel 13, described GaAs layer 12 is divided into multiple independently part; Second step, Ultra-Violet Laser prolongs described isolation channel 13 and processes described metal substrate 11 at least one times, until described metal substrate 11 cut off, produces multiple sub-battery.
By reducing the width of described isolation channel 13, when described gallium arsenide wafer size is certain, obtaining more sub-battery, reducing production cost.
In order to realize the reduction of described isolation channel 13 width, the present embodiment adopts the shorter Ultra-Violet Laser of wavelength to process, energy due to photon is greater than the bond energy of chemical bond or metallic bond, direct boiling, thermal effect can not be produced, the chip of isolation channel 13 vicinity making width less can not be subject to thermal impact and produce ablation, improves rate of finished products.Simultaneously due to can not thermal stress be produced, avoid breaking of GaAs, metal substrate can not produce the defects such as larger volcanic crater and crimping.
Concrete, in the present embodiment, the pulsewidth of described Ultra-Violet Laser is 20-60ns, power≤10W.
When adding man-hour to described GaAs layer 12, speed is 100-200mm/s, and frequency is 20-30KHz, and power is 7W, and the width of ablation isolation channel is 100um.
When adding man-hour to described metal substrate 11, speed is 200-300mm/s, and frequency is 20-30KHz, and power is 10W.Because the laser energy in the present embodiment is less, needing repeatedly to carry out cutting processing to described metal substrate, as added man-hour to the gallium arsenide wafer of 4 or 6 cun, needing the cutting described metal substrate being carried out at least 10 times.
Certainly in other embodiments, also can adopt other high or low powers, corresponding carrying out adjusts speed.
In the present embodiment, adopting vision system to take pictures to gallium arsenide wafer, then according to getting photographic intelligence rotary table or fixture, realizing the location of gallium arsenide wafer.Then Ultra-Violet Laser bright dipping processing, removes GaAs layer, forms the isolation channel that 100um is wide.Multiple described isolation channel is staggered in grid palisade.
Further, described Ultra-Violet Laser adopts the telecentric lens that focal length is less to focus on.
Further, described gallium arsenide wafer adopts the grid palisade frock clamp (not shown) absorption with hollow out fixing, in order to avoid to the damage of fixture during laser cut metal substrate, avoids fixture to the scuffing of metal substrate and extruding simultaneously.
Further, the residue adopting while to described gallium arsenide wafer laser processing dust cleaning apparatus (not shown) to produce laser processing or waste gas extract.
Above content is in conjunction with concrete preferred implementation further description made for the present invention, can not assert that specific embodiment of the invention is confined to these explanations.For general technical staff of the technical field of the invention; make some equivalent alternative or obvious modification without departing from the inventive concept of the premise; and performance or purposes identical, all should be considered as belonging to the scope of patent protection that the present invention is determined by submitted to claims.
Claims (7)
1. a laser processing for gallium arsenide cells, forms gallium arsenide cells by carrying out cutting to gallium arsenide wafer, it is characterized in that, adopt Ultra-Violet Laser to process described GaAs layer, form multiple isolation channel; Adopt Ultra-Violet Laser to prolong described isolation channel to process described metal substrate at least one times, until described metal substrate cut off, produce multiple sub-battery.
2. laser processing as claimed in claim 1, it is characterized in that, the pulsewidth of described Ultra-Violet Laser is 20-60ns, power≤10W.
3. laser processing as claimed in claim 1, it is characterized in that, add man-hour to described GaAs layer, speed is 100-200mm/s, and frequency is 20-30KHz, and power is 7W.
4. laser processing as claimed in claim 1, it is characterized in that, add man-hour to described metal substrate, speed is 200-300mm/s, and frequency is 20-30KHz, and power is 10W.
5. laser processing as claimed in claim 1, it is characterized in that, described Ultra-Violet Laser is focused on by telecentric lens.
6. laser processing as claimed in claim 1, is characterized in that, described gallium arsenide wafer adopts the grid palisade frock clamp absorption with hollow out fixing.
7. laser processing as claimed in claim 1, is characterized in that, the residue adopting while to described gallium arsenide wafer laser processing dust cleaning apparatus to produce laser processing or waste gas extract.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510292041.7A CN104868017A (en) | 2015-06-01 | 2015-06-01 | GaAs cell laser processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510292041.7A CN104868017A (en) | 2015-06-01 | 2015-06-01 | GaAs cell laser processing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104868017A true CN104868017A (en) | 2015-08-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510292041.7A Pending CN104868017A (en) | 2015-06-01 | 2015-06-01 | GaAs cell laser processing method |
Country Status (1)
| Country | Link |
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| CN (1) | CN104868017A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110120441A (en) * | 2019-04-03 | 2019-08-13 | 常州雷射激光设备有限公司 | Flexible gallium arsenide film battery back electrode laser windowing Processes and apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101165877A (en) * | 2006-10-17 | 2008-04-23 | 株式会社迪思科 | Laser processing method for gallium arsenide wafer |
| CN101842184A (en) * | 2007-10-30 | 2010-09-22 | 浜松光子学株式会社 | Laser processing method |
-
2015
- 2015-06-01 CN CN201510292041.7A patent/CN104868017A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101165877A (en) * | 2006-10-17 | 2008-04-23 | 株式会社迪思科 | Laser processing method for gallium arsenide wafer |
| CN101842184A (en) * | 2007-10-30 | 2010-09-22 | 浜松光子学株式会社 | Laser processing method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110120441A (en) * | 2019-04-03 | 2019-08-13 | 常州雷射激光设备有限公司 | Flexible gallium arsenide film battery back electrode laser windowing Processes and apparatus |
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| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150826 |
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| RJ01 | Rejection of invention patent application after publication |