CN104541356A - 晶片的处理方法 - Google Patents
晶片的处理方法 Download PDFInfo
- Publication number
- CN104541356A CN104541356A CN201380041694.7A CN201380041694A CN104541356A CN 104541356 A CN104541356 A CN 104541356A CN 201380041694 A CN201380041694 A CN 201380041694A CN 104541356 A CN104541356 A CN 104541356A
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- wafer
- support plate
- ultraviolet rays
- irradiation
- processing
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- 238000003672 processing method Methods 0.000 title abstract description 13
- 239000000853 adhesive Substances 0.000 claims abstract description 90
- 230000001070 adhesive effect Effects 0.000 claims abstract description 90
- 239000000203 mixture Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 32
- 230000001678 irradiating effect Effects 0.000 claims abstract description 20
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 235000012431 wafers Nutrition 0.000 description 158
- 239000007789 gas Substances 0.000 description 69
- -1 azo compound Chemical class 0.000 description 32
- 239000011521 glass Substances 0.000 description 31
- 239000000178 monomer Substances 0.000 description 23
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 20
- 125000000524 functional group Chemical group 0.000 description 19
- 238000011282 treatment Methods 0.000 description 18
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 239000002390 adhesive tape Substances 0.000 description 14
- 150000003839 salts Chemical class 0.000 description 14
- 239000003504 photosensitizing agent Substances 0.000 description 11
- 229920000058 polyacrylate Polymers 0.000 description 9
- 239000003505 polymerization initiator Substances 0.000 description 9
- 238000006116 polymerization reaction Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000012719 thermal polymerization Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 125000003545 alkoxy group Chemical group 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 230000000007 visual effect Effects 0.000 description 7
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 6
- 150000007514 bases Chemical class 0.000 description 6
- 125000005265 dialkylamine group Chemical group 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000003999 initiator Substances 0.000 description 6
- 238000000227 grinding Methods 0.000 description 5
- 125000000962 organic group Chemical group 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 125000003700 epoxy group Chemical group 0.000 description 4
- 230000020169 heat generation Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Chemical compound C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 3
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 3
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 230000000638 stimulation Effects 0.000 description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 3
- CCVYRRGZDBSHFU-UHFFFAOYSA-N (2-hydroxyphenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC=C1O CCVYRRGZDBSHFU-UHFFFAOYSA-N 0.000 description 2
- FYRCDEARNUVZRG-UHFFFAOYSA-N 1,1,5-trimethyl-3,3-bis(2-methylpentan-2-ylperoxy)cyclohexane Chemical compound CCCC(C)(C)OOC1(OOC(C)(C)CCC)CC(C)CC(C)(C)C1 FYRCDEARNUVZRG-UHFFFAOYSA-N 0.000 description 2
- XSZYESUNPWGWFQ-UHFFFAOYSA-N 1-(2-hydroperoxypropan-2-yl)-4-methylcyclohexane Chemical compound CC1CCC(C(C)(C)OO)CC1 XSZYESUNPWGWFQ-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- PRDISNSOFCDGJQ-UHFFFAOYSA-N 2-[10-(2-hydroxyethoxy)anthracen-9-yl]oxyethanol Chemical compound C1=CC=C2C(OCCO)=C(C=CC=C3)C3=C(OCCO)C2=C1 PRDISNSOFCDGJQ-UHFFFAOYSA-N 0.000 description 2
- HQTGKBNXVCVDOY-UHFFFAOYSA-N 2-[[10-(oxiran-2-ylmethoxy)anthracen-9-yl]oxymethyl]oxirane Chemical compound C1OC1COC(C1=CC=CC=C11)=C2C=CC=CC2=C1OCC1CO1 HQTGKBNXVCVDOY-UHFFFAOYSA-N 0.000 description 2
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 2
- FRIBMENBGGCKPD-UHFFFAOYSA-N 3-(2,3-dimethoxyphenyl)prop-2-enal Chemical compound COC1=CC=CC(C=CC=O)=C1OC FRIBMENBGGCKPD-UHFFFAOYSA-N 0.000 description 2
- KSMGAOMUPSQGTB-UHFFFAOYSA-N 9,10-dibutoxyanthracene Chemical compound C1=CC=C2C(OCCCC)=C(C=CC=C3)C3=C(OCCCC)C2=C1 KSMGAOMUPSQGTB-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 229920006243 acrylic copolymer Polymers 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 150000001454 anthracenes Chemical class 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 125000004386 diacrylate group Chemical group 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229940083124 ganglion-blocking antiadrenergic secondary and tertiary amines Drugs 0.000 description 2
- WUAXWQRULBZETB-UHFFFAOYSA-N homoveratric acid Chemical compound COC1=CC=C(CC(O)=O)C=C1OC WUAXWQRULBZETB-UHFFFAOYSA-N 0.000 description 2
- 150000002429 hydrazines Chemical class 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 2
- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 150000003003 phosphines Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 150000003141 primary amines Chemical class 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 125000003831 tetrazolyl group Chemical group 0.000 description 2
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 1
- QEQBMZQFDDDTPN-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy benzenecarboperoxoate Chemical compound CC(C)(C)OOOC(=O)C1=CC=CC=C1 QEQBMZQFDDDTPN-UHFFFAOYSA-N 0.000 description 1
- WMUZDBZPDLHUMW-UHFFFAOYSA-N (2-nitrophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC=C1[N+]([O-])=O WMUZDBZPDLHUMW-UHFFFAOYSA-N 0.000 description 1
- ZAMZCSIXTWIEDY-UHFFFAOYSA-N (2-propylphenyl)methanol Chemical compound CCCC1=CC=CC=C1CO ZAMZCSIXTWIEDY-UHFFFAOYSA-N 0.000 description 1
- QBYIENPQHBMVBV-HFEGYEGKSA-N (2R)-2-hydroxy-2-phenylacetic acid Chemical compound O[C@@H](C(O)=O)c1ccccc1.O[C@@H](C(O)=O)c1ccccc1 QBYIENPQHBMVBV-HFEGYEGKSA-N 0.000 description 1
- YBADLXQNJCMBKR-UHFFFAOYSA-N (4-nitrophenyl)acetic acid Chemical compound OC(=O)CC1=CC=C([N+]([O-])=O)C=C1 YBADLXQNJCMBKR-UHFFFAOYSA-N 0.000 description 1
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 1
- BWZAUXRKSMJLMH-UHFFFAOYSA-N 1,1-diethoxyethylbenzene Chemical compound CCOC(C)(OCC)C1=CC=CC=C1 BWZAUXRKSMJLMH-UHFFFAOYSA-N 0.000 description 1
- MYWOJODOMFBVCB-UHFFFAOYSA-N 1,2,6-trimethylphenanthrene Chemical compound CC1=CC=C2C3=CC(C)=CC=C3C=CC2=C1C MYWOJODOMFBVCB-UHFFFAOYSA-N 0.000 description 1
- GJZFGDYLJLCGHT-UHFFFAOYSA-N 1,2-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(CC)C(CC)=CC=C3SC2=C1 GJZFGDYLJLCGHT-UHFFFAOYSA-N 0.000 description 1
- UYEDESPZQLZMCL-UHFFFAOYSA-N 1,2-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(C)C(C)=CC=C3SC2=C1 UYEDESPZQLZMCL-UHFFFAOYSA-N 0.000 description 1
- QWQFVUQPHUKAMY-UHFFFAOYSA-N 1,2-diphenyl-2-propoxyethanone Chemical compound C=1C=CC=CC=1C(OCCC)C(=O)C1=CC=CC=C1 QWQFVUQPHUKAMY-UHFFFAOYSA-N 0.000 description 1
- DKEGCUDAFWNSSO-UHFFFAOYSA-N 1,8-dibromooctane Chemical compound BrCCCCCCCCBr DKEGCUDAFWNSSO-UHFFFAOYSA-N 0.000 description 1
- WNHZDWPCRXBSFK-UHFFFAOYSA-N 1-(2-ethylhexoxy)-3-[10-[3-(2-ethylhexoxy)-2-hydroxypropoxy]anthracen-9-yl]oxypropan-2-ol Chemical compound C1=CC=C2C(OCC(O)COCC(CC)CCCC)=C(C=CC=C3)C3=C(OCC(O)COCC(CC)CCCC)C2=C1 WNHZDWPCRXBSFK-UHFFFAOYSA-N 0.000 description 1
- ZWXDAANEJMSCEX-UHFFFAOYSA-N 1-(3-anilinophenyl)ethanone Chemical compound CC(=O)C1=CC=CC(NC=2C=CC=CC=2)=C1 ZWXDAANEJMSCEX-UHFFFAOYSA-N 0.000 description 1
- XEONVQLYKBBQJY-UHFFFAOYSA-N 1-[10-(2-hydroxy-3-phenoxypropoxy)anthracen-9-yl]oxy-3-phenoxypropan-2-ol Chemical compound C=12C=CC=CC2=C(OCC(O)COC=2C=CC=CC=2)C2=CC=CC=C2C=1OCC(O)COC1=CC=CC=C1 XEONVQLYKBBQJY-UHFFFAOYSA-N 0.000 description 1
- OHNKIMTZQAXALS-UHFFFAOYSA-N 1-[10-(2-hydroxybutoxy)anthracen-9-yl]oxybutan-2-ol Chemical compound C1=CC=C2C(OCC(O)CC)=C(C=CC=C3)C3=C(OCC(O)CC)C2=C1 OHNKIMTZQAXALS-UHFFFAOYSA-N 0.000 description 1
- IRUBQXDJLSCIKR-UHFFFAOYSA-N 1-[10-(2-hydroxypropoxy)anthracen-9-yl]oxypropan-2-ol Chemical compound C1=CC=C2C(OCC(O)C)=C(C=CC=C3)C3=C(OCC(C)O)C2=C1 IRUBQXDJLSCIKR-UHFFFAOYSA-N 0.000 description 1
- ODDAWJGQWOGBCX-UHFFFAOYSA-N 1-[2-(dimethylazaniumyl)ethyl]tetrazole-5-thiolate Chemical compound CN(C)CCN1N=NN=C1S ODDAWJGQWOGBCX-UHFFFAOYSA-N 0.000 description 1
- VHPQMNIQZOAPJD-UHFFFAOYSA-N 1-butoxy-3-[10-(3-butoxy-2-hydroxypropoxy)anthracen-9-yl]oxypropan-2-ol Chemical compound C1=CC=C2C(OCC(O)COCCCC)=C(C=CC=C3)C3=C(OCC(O)COCCCC)C2=C1 VHPQMNIQZOAPJD-UHFFFAOYSA-N 0.000 description 1
- YNSNJGRCQCDRDM-UHFFFAOYSA-N 1-chlorothioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2Cl YNSNJGRCQCDRDM-UHFFFAOYSA-N 0.000 description 1
- CTOHEPRICOKHIV-UHFFFAOYSA-N 1-dodecylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2CCCCCCCCCCCC CTOHEPRICOKHIV-UHFFFAOYSA-N 0.000 description 1
- XOHZHMUQBFJTNH-UHFFFAOYSA-N 1-methyl-2h-tetrazole-5-thione Chemical compound CN1N=NN=C1S XOHZHMUQBFJTNH-UHFFFAOYSA-N 0.000 description 1
- PRPINYUDVPFIRX-UHFFFAOYSA-N 1-naphthaleneacetic acid Chemical compound C1=CC=C2C(CC(=O)O)=CC=CC2=C1 PRPINYUDVPFIRX-UHFFFAOYSA-N 0.000 description 1
- 239000005971 1-naphthylacetic acid Substances 0.000 description 1
- DCYGAPKNVCQNOE-UHFFFAOYSA-N 2,2,2-triphenylacetic acid Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)(C(=O)O)C1=CC=CC=C1 DCYGAPKNVCQNOE-UHFFFAOYSA-N 0.000 description 1
- GZBSIABKXVPBFY-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)CO GZBSIABKXVPBFY-UHFFFAOYSA-N 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- MSYHXPDISYORMC-UHFFFAOYSA-N 2,3-dimethyl-9,10-bis(phenylmethoxy)anthracene Chemical compound C12=CC=CC=C2C(OCC=2C=CC=CC=2)=C2C=C(C)C(C)=CC2=C1OCC1=CC=CC=C1 MSYHXPDISYORMC-UHFFFAOYSA-N 0.000 description 1
- AGTYTCIZMSYDFZ-UHFFFAOYSA-N 2,3-dimethyl-9,10-dipropoxyanthracene Chemical compound CC1=C(C)C=C2C(OCCC)=C(C=CC=C3)C3=C(OCCC)C2=C1 AGTYTCIZMSYDFZ-UHFFFAOYSA-N 0.000 description 1
- KCNISYPADDTFDO-UHFFFAOYSA-N 2,4-dinitrophenylacetic acid Chemical compound OC(=O)CC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O KCNISYPADDTFDO-UHFFFAOYSA-N 0.000 description 1
- ODVLMCWNGKLROU-UHFFFAOYSA-N 2-(1,3-benzodioxol-5-yl)acetic acid Chemical compound OC(=O)CC1=CC=C2OCOC2=C1 ODVLMCWNGKLROU-UHFFFAOYSA-N 0.000 description 1
- BBZDYQUXRFATHZ-UHFFFAOYSA-N 2-(2,5-dimethoxyphenyl)acetic acid Chemical compound COC1=CC=C(OC)C(CC(O)=O)=C1 BBZDYQUXRFATHZ-UHFFFAOYSA-N 0.000 description 1
- IVEWTCACRDEAOB-UHFFFAOYSA-N 2-(2-methoxyphenyl)acetic acid Chemical compound COC1=CC=CC=C1CC(O)=O IVEWTCACRDEAOB-UHFFFAOYSA-N 0.000 description 1
- RZWGTXHSYZGXKF-UHFFFAOYSA-N 2-(2-methylphenyl)acetic acid Chemical compound CC1=CC=CC=C1CC(O)=O RZWGTXHSYZGXKF-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- DDSJXCGGOXKGSJ-UHFFFAOYSA-N 2-(3,4,5-trimethoxyphenyl)acetic acid Chemical compound COC1=CC(CC(O)=O)=CC(OC)=C1OC DDSJXCGGOXKGSJ-UHFFFAOYSA-N 0.000 description 1
- GXXXUZIRGXYDFP-UHFFFAOYSA-N 2-(4-methylphenyl)acetic acid Chemical compound CC1=CC=C(CC(O)=O)C=C1 GXXXUZIRGXYDFP-UHFFFAOYSA-N 0.000 description 1
- RBSRRICSXWXMRC-UHFFFAOYSA-N 2-(4-nitrophenyl)propanoic acid Chemical compound OC(=O)C(C)C1=CC=C([N+]([O-])=O)C=C1 RBSRRICSXWXMRC-UHFFFAOYSA-N 0.000 description 1
- CMWTZPSULFXXJA-UHFFFAOYSA-N 2-(6-methoxy-2-naphthalenyl)propanoic acid Chemical compound C1=C(C(C)C(O)=O)C=CC2=CC(OC)=CC=C21 CMWTZPSULFXXJA-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 1
- KGKAAARUKRADDP-UHFFFAOYSA-N 2-[(10-methylanthracen-9-yl)oxymethyl]oxirane Chemical compound C12=CC=CC=C2C(C)=C2C=CC=CC2=C1OCC1CO1 KGKAAARUKRADDP-UHFFFAOYSA-N 0.000 description 1
- MMEDJBFVJUFIDD-UHFFFAOYSA-N 2-[2-(carboxymethyl)phenyl]acetic acid Chemical compound OC(=O)CC1=CC=CC=C1CC(O)=O MMEDJBFVJUFIDD-UHFFFAOYSA-N 0.000 description 1
- GDYYIJNDPMFMTB-UHFFFAOYSA-N 2-[3-(carboxymethyl)phenyl]acetic acid Chemical compound OC(=O)CC1=CC=CC(CC(O)=O)=C1 GDYYIJNDPMFMTB-UHFFFAOYSA-N 0.000 description 1
- SLWIPPZWFZGHEU-UHFFFAOYSA-N 2-[4-(carboxymethyl)phenyl]acetic acid Chemical compound OC(=O)CC1=CC=C(CC(O)=O)C=C1 SLWIPPZWFZGHEU-UHFFFAOYSA-N 0.000 description 1
- NZXSQHXJZPBRQY-UHFFFAOYSA-N 2-[[2,3-dimethyl-10-(oxiran-2-ylmethoxy)anthracen-9-yl]oxymethyl]oxirane Chemical compound C12=CC=CC=C2C(OCC2OC2)=C2C=C(C)C(C)=CC2=C1OCC1CO1 NZXSQHXJZPBRQY-UHFFFAOYSA-N 0.000 description 1
- CPESRJMFSVLRRX-UHFFFAOYSA-N 2-[[2-ethyl-10-(oxiran-2-ylmethoxy)anthracen-9-yl]oxymethyl]oxirane Chemical compound C=12C=CC=CC2=C(OCC2OC2)C2=CC(CC)=CC=C2C=1OCC1CO1 CPESRJMFSVLRRX-UHFFFAOYSA-N 0.000 description 1
- SXIAPOHEWZYQER-UHFFFAOYSA-N 2-[[2-tert-butyl-10-(oxiran-2-ylmethoxy)anthracen-9-yl]oxymethyl]oxirane Chemical compound C=12C=CC=CC2=C(OCC2OC2)C2=CC(C(C)(C)C)=CC=C2C=1OCC1CO1 SXIAPOHEWZYQER-UHFFFAOYSA-N 0.000 description 1
- QLIBJPGWWSHWBF-UHFFFAOYSA-N 2-aminoethyl methacrylate Chemical compound CC(=C)C(=O)OCCN QLIBJPGWWSHWBF-UHFFFAOYSA-N 0.000 description 1
- UGIJCMNGQCUTPI-UHFFFAOYSA-N 2-aminoethyl prop-2-enoate Chemical compound NCCOC(=O)C=C UGIJCMNGQCUTPI-UHFFFAOYSA-N 0.000 description 1
- FLVWPWRASWZGRA-UHFFFAOYSA-N 2-ethyl-9,10-bis(phenylmethoxy)anthracene Chemical compound C=12C=CC=CC2=C(OCC=2C=CC=CC=2)C2=CC(CC)=CC=C2C=1OCC1=CC=CC=C1 FLVWPWRASWZGRA-UHFFFAOYSA-N 0.000 description 1
- SURWYRGVICLUBJ-UHFFFAOYSA-N 2-ethyl-9,10-dimethoxyanthracene Chemical compound C1=CC=CC2=C(OC)C3=CC(CC)=CC=C3C(OC)=C21 SURWYRGVICLUBJ-UHFFFAOYSA-N 0.000 description 1
- BDPJILVXUVJWBF-UHFFFAOYSA-N 2-ethyl-9,10-dipropoxyanthracene Chemical compound CCC1=CC=C2C(OCCC)=C(C=CC=C3)C3=C(OCCC)C2=C1 BDPJILVXUVJWBF-UHFFFAOYSA-N 0.000 description 1
- NLGDWWCZQDIASO-UHFFFAOYSA-N 2-hydroxy-1-(7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-yl)-2-phenylethanone Chemical class OC(C(=O)c1cccc2Oc12)c1ccccc1 NLGDWWCZQDIASO-UHFFFAOYSA-N 0.000 description 1
- WBJWXIQDBDZMAW-UHFFFAOYSA-N 2-hydroxynaphthalene-1-carbonyl chloride Chemical compound C1=CC=CC2=C(C(Cl)=O)C(O)=CC=C21 WBJWXIQDBDZMAW-UHFFFAOYSA-N 0.000 description 1
- DPNXHTDWGGVXID-UHFFFAOYSA-N 2-isocyanatoethyl prop-2-enoate Chemical compound C=CC(=O)OCCN=C=O DPNXHTDWGGVXID-UHFFFAOYSA-N 0.000 description 1
- YRNDGUSDBCARGC-UHFFFAOYSA-N 2-methoxyacetophenone Chemical compound COCC(=O)C1=CC=CC=C1 YRNDGUSDBCARGC-UHFFFAOYSA-N 0.000 description 1
- RTEZVHMDMFEURJ-UHFFFAOYSA-N 2-methylpentan-2-yl 2,2-dimethylpropaneperoxoate Chemical compound CCCC(C)(C)OOC(=O)C(C)(C)C RTEZVHMDMFEURJ-UHFFFAOYSA-N 0.000 description 1
- VIBOGIYPPWLDTI-UHFFFAOYSA-N 2-naphthylacetic acid Chemical compound C1=CC=CC2=CC(CC(=O)O)=CC=C21 VIBOGIYPPWLDTI-UHFFFAOYSA-N 0.000 description 1
- WLJVXDMOQOGPHL-PPJXEINESA-N 2-phenylacetic acid Chemical compound O[14C](=O)CC1=CC=CC=C1 WLJVXDMOQOGPHL-PPJXEINESA-N 0.000 description 1
- LVFFZQQWIZURIO-UHFFFAOYSA-N 2-phenylbutanedioic acid Chemical compound OC(=O)CC(C(O)=O)C1=CC=CC=C1 LVFFZQQWIZURIO-UHFFFAOYSA-N 0.000 description 1
- OFJWFSNDPCAWDK-UHFFFAOYSA-N 2-phenylbutyric acid Chemical compound CCC(C(O)=O)C1=CC=CC=C1 OFJWFSNDPCAWDK-UHFFFAOYSA-N 0.000 description 1
- SDJCLYBBPUHKCD-UHFFFAOYSA-N 2-pyren-1-ylacetic acid Chemical compound C1=C2C(CC(=O)O)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 SDJCLYBBPUHKCD-UHFFFAOYSA-N 0.000 description 1
- MRNNFZQBSPGQNR-UHFFFAOYSA-N 2-tert-butyl-1,9-bis[(4-ethenylphenyl)methoxy]anthracene Chemical compound C12=C(OCC=3C=CC(C=C)=CC=3)C(C(C)(C)C)=CC=C2C=C2C=CC=CC2=C1OCC1=CC=C(C=C)C=C1 MRNNFZQBSPGQNR-UHFFFAOYSA-N 0.000 description 1
- FIGATVDDTCGEJO-UHFFFAOYSA-N 2-tert-butyl-9,10-bis(phenylmethoxy)anthracene Chemical compound C=12C=CC=CC2=C(OCC=2C=CC=CC=2)C2=CC(C(C)(C)C)=CC=C2C=1OCC1=CC=CC=C1 FIGATVDDTCGEJO-UHFFFAOYSA-N 0.000 description 1
- PMYKTKUPJDNGRU-UHFFFAOYSA-N 2-tert-butyl-9,10-diethoxyanthracene Chemical compound CC(C)(C)C1=CC=C2C(OCC)=C(C=CC=C3)C3=C(OCC)C2=C1 PMYKTKUPJDNGRU-UHFFFAOYSA-N 0.000 description 1
- OILWEQNBDUGJQS-UHFFFAOYSA-N 2-tert-butyl-9,10-dimethoxyanthracene Chemical compound CC(C)(C)C1=CC=C2C(OC)=C(C=CC=C3)C3=C(OC)C2=C1 OILWEQNBDUGJQS-UHFFFAOYSA-N 0.000 description 1
- TXHVTAFMEXYBMP-UHFFFAOYSA-N 2-tert-butyl-9,10-dipropoxyanthracene Chemical compound CC(C)(C)C1=CC=C2C(OCCC)=C(C=CC=C3)C3=C(OCCC)C2=C1 TXHVTAFMEXYBMP-UHFFFAOYSA-N 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- VZOPVJNBOQOLPN-UHFFFAOYSA-N 3-(p-nitrophenyl)propanoic acid Chemical compound OC(=O)CCC1=CC=C([N+]([O-])=O)C=C1 VZOPVJNBOQOLPN-UHFFFAOYSA-N 0.000 description 1
- IKGWGDNJXZYJQB-UHFFFAOYSA-N 3-[10-(2,3-dihydroxypropoxy)anthracen-9-yl]oxypropane-1,2-diol Chemical compound C1=CC=C2C(OCC(O)CO)=C(C=CC=C3)C3=C(OCC(O)CO)C2=C1 IKGWGDNJXZYJQB-UHFFFAOYSA-N 0.000 description 1
- PTTIGGBMNZRYME-UHFFFAOYSA-N 3-[10-(2-carboxyethoxy)-3-ethylanthracen-9-yl]oxypropanoic acid Chemical compound C1=CC=CC2=C(OCCC(O)=O)C3=CC(CC)=CC=C3C(OCCC(O)=O)=C21 PTTIGGBMNZRYME-UHFFFAOYSA-N 0.000 description 1
- SRQIYDBCQASIDW-UHFFFAOYSA-N 3-[[2,3-dimethyl-10-[(3-methyloxetan-3-yl)methoxy]anthracen-9-yl]oxymethyl]-3-methyloxetane Chemical compound C12=CC=CC=C2C(OCC2(C)COC2)=C2C=C(C)C(C)=CC2=C1OCC1(C)COC1 SRQIYDBCQASIDW-UHFFFAOYSA-N 0.000 description 1
- ABSHRIYDTIMSRE-UHFFFAOYSA-N 3-[[2-ethyl-10-[(3-methyloxetan-3-yl)methoxy]anthracen-9-yl]oxymethyl]-3-methyloxetane Chemical compound C=12C=CC=CC2=C(OCC2(C)COC2)C2=CC(CC)=CC=C2C=1OCC1(C)COC1 ABSHRIYDTIMSRE-UHFFFAOYSA-N 0.000 description 1
- UAMZGAPRSFSMFY-UHFFFAOYSA-N 3-[[2-tert-butyl-10-[(3-methyloxetan-3-yl)methoxy]anthracen-9-yl]oxymethyl]-3-methyloxetane Chemical compound C=12C=CC=CC2=C(OCC2(C)COC2)C2=CC(C(C)(C)C)=CC=C2C=1OCC1(C)COC1 UAMZGAPRSFSMFY-UHFFFAOYSA-N 0.000 description 1
- NMGODFWGUBLTTA-UHFFFAOYSA-N 3-amino-1h-quinazoline-2,4-dione Chemical compound C1=CC=C2C(=O)N(N)C(=O)NC2=C1 NMGODFWGUBLTTA-UHFFFAOYSA-N 0.000 description 1
- HDLQGISFYDYWFJ-UHFFFAOYSA-N 3-methyl-2-phenylbutanoic acid Chemical compound CC(C)C(C(O)=O)C1=CC=CC=C1 HDLQGISFYDYWFJ-UHFFFAOYSA-N 0.000 description 1
- VGJSVOIFNMYDNH-UHFFFAOYSA-N 3-methyl-3-[(10-methylanthracen-9-yl)oxymethyl]oxetane Chemical compound C12=CC=CC=C2C(C)=C2C=CC=CC2=C1OCC1(C)COC1 VGJSVOIFNMYDNH-UHFFFAOYSA-N 0.000 description 1
- NWCUZNPSULENDN-UHFFFAOYSA-N 3-methyl-3-[[10-[(3-methyloxetan-3-yl)methoxy]anthracen-9-yl]oxymethyl]oxetane Chemical compound C=12C=CC=CC2=C(OCC2(C)COC2)C2=CC=CC=C2C=1OCC1(C)COC1 NWCUZNPSULENDN-UHFFFAOYSA-N 0.000 description 1
- GJMPSRSMBJLKKB-UHFFFAOYSA-N 3-methylphenylacetic acid Chemical compound CC1=CC=CC(CC(O)=O)=C1 GJMPSRSMBJLKKB-UHFFFAOYSA-N 0.000 description 1
- JHWGFJBTMHEZME-UHFFFAOYSA-N 4-prop-2-enoyloxybutyl prop-2-enoate Chemical compound C=CC(=O)OCCCCOC(=O)C=C JHWGFJBTMHEZME-UHFFFAOYSA-N 0.000 description 1
- WYXQDGGJZMWJOX-UHFFFAOYSA-N 5-ethyl-1-methyltetrazole Chemical compound CCC1=NN=NN1C WYXQDGGJZMWJOX-UHFFFAOYSA-N 0.000 description 1
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- FIHBHSQYSYVZQE-UHFFFAOYSA-N 6-prop-2-enoyloxyhexyl prop-2-enoate Chemical compound C=CC(=O)OCCCCCCOC(=O)C=C FIHBHSQYSYVZQE-UHFFFAOYSA-N 0.000 description 1
- GVQWEXVGSCZATN-UHFFFAOYSA-N 9,10-bis(phenylmethoxy)anthracene Chemical compound C=1C=CC=CC=1COC(C1=CC=CC=C11)=C2C=CC=CC2=C1OCC1=CC=CC=C1 GVQWEXVGSCZATN-UHFFFAOYSA-N 0.000 description 1
- HKFXNBUJPZTFGD-UHFFFAOYSA-N 9,10-bis[(4-ethenylphenyl)methoxy]-2,3-dimethylanthracene Chemical compound C12=CC=CC=C2C(OCC=2C=CC(C=C)=CC=2)=C2C=C(C)C(C)=CC2=C1OCC1=CC=C(C=C)C=C1 HKFXNBUJPZTFGD-UHFFFAOYSA-N 0.000 description 1
- KIVLWTKUKZSPLI-UHFFFAOYSA-N 9,10-bis[(4-ethenylphenyl)methoxy]-2-ethylanthracene Chemical compound C=12C=CC=CC2=C(OCC=2C=CC(C=C)=CC=2)C2=CC(CC)=CC=C2C=1OCC1=CC=C(C=C)C=C1 KIVLWTKUKZSPLI-UHFFFAOYSA-N 0.000 description 1
- LFYOKPLDDUCNGB-UHFFFAOYSA-N 9,10-bis[(4-ethenylphenyl)methoxy]anthracene Chemical compound C1=CC(C=C)=CC=C1COC(C1=CC=CC=C11)=C(C=CC=C2)C2=C1OCC1=CC=C(C=C)C=C1 LFYOKPLDDUCNGB-UHFFFAOYSA-N 0.000 description 1
- SVNMDXTZBMAECY-UHFFFAOYSA-N 9,10-diethoxy-2,3-dimethylanthracene Chemical compound CC1=C(C)C=C2C(OCC)=C(C=CC=C3)C3=C(OCC)C2=C1 SVNMDXTZBMAECY-UHFFFAOYSA-N 0.000 description 1
- FUWFDADDJOUNDL-UHFFFAOYSA-N 9,10-diethoxy-2-ethylanthracene Chemical compound CCC1=CC=C2C(OCC)=C(C=CC=C3)C3=C(OCC)C2=C1 FUWFDADDJOUNDL-UHFFFAOYSA-N 0.000 description 1
- GJNKQJAJXSUJBO-UHFFFAOYSA-N 9,10-diethoxyanthracene Chemical compound C1=CC=C2C(OCC)=C(C=CC=C3)C3=C(OCC)C2=C1 GJNKQJAJXSUJBO-UHFFFAOYSA-N 0.000 description 1
- URNHKGAEEHGYPK-UHFFFAOYSA-N 9,10-dimethoxy-2,3-dimethylanthracene Chemical compound CC1=C(C)C=C2C(OC)=C(C=CC=C3)C3=C(OC)C2=C1 URNHKGAEEHGYPK-UHFFFAOYSA-N 0.000 description 1
- JWJMBKSFTTXMLL-UHFFFAOYSA-N 9,10-dimethoxyanthracene Chemical compound C1=CC=C2C(OC)=C(C=CC=C3)C3=C(OC)C2=C1 JWJMBKSFTTXMLL-UHFFFAOYSA-N 0.000 description 1
- LBQJFQVDEJMUTF-UHFFFAOYSA-N 9,10-dipropoxyanthracene Chemical compound C1=CC=C2C(OCCC)=C(C=CC=C3)C3=C(OCCC)C2=C1 LBQJFQVDEJMUTF-UHFFFAOYSA-N 0.000 description 1
- IFUBVHURYDEPRY-UHFFFAOYSA-N 9-[(4-ethenylphenyl)methoxy]-10-methylanthracene Chemical compound C12=CC=CC=C2C(C)=C2C=CC=CC2=C1OCC1=CC=C(C=C)C=C1 IFUBVHURYDEPRY-UHFFFAOYSA-N 0.000 description 1
- FTNHBFLTHCMFRW-UHFFFAOYSA-N 9-ethoxy-10-methylanthracene Chemical compound C1=CC=C2C(OCC)=C(C=CC=C3)C3=C(C)C2=C1 FTNHBFLTHCMFRW-UHFFFAOYSA-N 0.000 description 1
- ROUPCHNBAWMYEW-UHFFFAOYSA-N 9-methoxy-10-methylanthracene Chemical compound C1=CC=C2C(OC)=C(C=CC=C3)C3=C(C)C2=C1 ROUPCHNBAWMYEW-UHFFFAOYSA-N 0.000 description 1
- NXOKRFIYHOIOPM-UHFFFAOYSA-N 9-methyl-10-(1-phenylethoxy)anthracene Chemical compound C=12C=CC=CC2=C(C)C2=CC=CC=C2C=1OC(C)C1=CC=CC=C1 NXOKRFIYHOIOPM-UHFFFAOYSA-N 0.000 description 1
- VUMLWMKPSJPGLQ-UHFFFAOYSA-N 9-methyl-10-phenylmethoxyanthracene Chemical compound C12=CC=CC=C2C(C)=C2C=CC=CC2=C1OCC1=CC=CC=C1 VUMLWMKPSJPGLQ-UHFFFAOYSA-N 0.000 description 1
- WPKBFCIULMUVHF-UHFFFAOYSA-N 9-methyl-10-propan-2-yloxyanthracene Chemical compound C1=CC=C2C(OC(C)C)=C(C=CC=C3)C3=C(C)C2=C1 WPKBFCIULMUVHF-UHFFFAOYSA-N 0.000 description 1
- DNVJGJUGFFYUPT-UHFFFAOYSA-N 9h-fluorene-9-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)C3=CC=CC=C3C2=C1 DNVJGJUGFFYUPT-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- DIWVBIXQCNRCFE-UHFFFAOYSA-N DL-alpha-Methoxyphenylacetic acid Chemical compound COC(C(O)=O)C1=CC=CC=C1 DIWVBIXQCNRCFE-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- HEFNNWSXXWATRW-UHFFFAOYSA-N Ibuprofen Chemical compound CC(C)CC1=CC=C(C(C)C(O)=O)C=C1 HEFNNWSXXWATRW-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- IWYDHOAUDWTVEP-UHFFFAOYSA-N R-2-phenyl-2-hydroxyacetic acid Natural products OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- VSBFNCXKYIEYIS-UHFFFAOYSA-N Xanthene-9-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)C3=CC=CC=C3OC2=C1 VSBFNCXKYIEYIS-UHFFFAOYSA-N 0.000 description 1
- 241000860832 Yoda Species 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- INXWLSDYDXPENO-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(CO)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C INXWLSDYDXPENO-UHFFFAOYSA-N 0.000 description 1
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000005250 alkyl acrylate group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- PYHXGXCGESYPCW-UHFFFAOYSA-N alpha-phenylbenzeneacetic acid Natural products C=1C=CC=CC=1C(C(=O)O)C1=CC=CC=C1 PYHXGXCGESYPCW-UHFFFAOYSA-N 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- NWCHELUCVWSRRS-UHFFFAOYSA-N atrolactic acid Chemical compound OC(=O)C(O)(C)C1=CC=CC=C1 NWCHELUCVWSRRS-UHFFFAOYSA-N 0.000 description 1
- ZKTARFAXHMRZEF-UHFFFAOYSA-N azane;5-(2h-tetrazol-5-yl)-2h-tetrazole Chemical compound N.N.N1N=NC(C2=NNN=N2)=N1 ZKTARFAXHMRZEF-UHFFFAOYSA-N 0.000 description 1
- UKXSKSHDVLQNKG-UHFFFAOYSA-N benzilic acid Chemical compound C=1C=CC=CC=1C(O)(C(=O)O)C1=CC=CC=C1 UKXSKSHDVLQNKG-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- QRZAKQDHEVVFRX-UHFFFAOYSA-N biphenyl-4-ylacetic acid Chemical compound C1=CC(CC(=O)O)=CC=C1C1=CC=CC=C1 QRZAKQDHEVVFRX-UHFFFAOYSA-N 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006114 decarboxylation reaction Methods 0.000 description 1
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000005670 ethenylalkyl group Chemical group 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- YPGCWEMNNLXISK-UHFFFAOYSA-N hydratropic acid Chemical compound OC(=O)C(C)C1=CC=CC=C1 YPGCWEMNNLXISK-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- DKYWVDODHFEZIM-UHFFFAOYSA-N ketoprofen Chemical compound OC(=O)C(C)C1=CC=CC(C(=O)C=2C=CC=CC=2)=C1 DKYWVDODHFEZIM-UHFFFAOYSA-N 0.000 description 1
- 229960000991 ketoprofen Drugs 0.000 description 1
- 229960002510 mandelic acid Drugs 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 229920002601 oligoester Polymers 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001725 pyrenyl group Chemical group 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007870 radical polymerization initiator Substances 0.000 description 1
- WWYDYZMNFQIYPT-UHFFFAOYSA-N ru78191 Chemical compound OC(=O)C(C(O)=O)C1=CC=CC=C1 WWYDYZMNFQIYPT-UHFFFAOYSA-N 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- RPACBEVZENYWOL-XFULWGLBSA-M sodium;(2r)-2-[6-(4-chlorophenoxy)hexyl]oxirane-2-carboxylate Chemical compound [Na+].C=1C=C(Cl)C=CC=1OCCCCCC[C@]1(C(=O)[O-])CO1 RPACBEVZENYWOL-XFULWGLBSA-M 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- C09J11/02—Non-macromolecular additives
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
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- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
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- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
- C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
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- Materials Engineering (AREA)
- Metallurgy (AREA)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Adhesive Tapes (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
本发明的目的在于,提供在借助胶粘剂组合物将晶片固定于支承板的状态下对晶片进行处理的晶片的处理方法,该处理方法实现了更高的生产效率。本发明为一种晶片的处理方法,其具有:支承板固定工序,该工序是借助胶粘剂组合物将晶片固定于支承板的工序,其中,所述胶粘剂组合物含有胶粘剂成分和通过照射紫外线而产生气体的气体发生剂;晶片处理工序,该工序是对固定于所述支承板的晶片实施处理的工序;以及支承板剥离工序,该工序是对所述处理后的晶片照射紫外线而由所述气体发生剂产生气体,从而将支承板从晶片上剥离的工序,其中,在所述支承板剥离工序中,使用照射强度为100mW/cm2以上的点状或线状的紫外线且按照扫描晶片的整个面的方式进行照射。
Description
技术领域
本发明涉及在借助胶粘剂组合物将晶片固定于支承板的状态下对晶片进行处理的晶片的处理方法,该处理方法实现了更高的生产效率。
背景技术
在半导体芯片的制造工序中,为了在晶片的加工时易于操作或不发生破损而将晶片固定于支承板。例如,在将从高纯度的硅单晶等切下的厚膜晶片磨削至规定的厚度而制成薄膜晶片的情况下,借助胶粘剂组合物将厚膜晶片粘接于支承板。
对于将晶片粘接于支承板的胶粘剂组合物来说,要求在加工工序中将晶片尽可能牢固地固定的高粘合性,并且要求在工序结束后能够将晶片剥离而不会损伤晶片(以下,也称为“高粘接易剥离”。)。
作为实现了高粘接易剥离的胶粘剂组合物,专利文献1中记载了一种使用了双面粘合带的晶片的处理方法,所述双面粘合带具有含有偶氮化合物等通过照射紫外线而产生气体的气体发生剂的粘合层。在专利文献1所记载的晶片的处理方法中,首先,借助双面粘合带将晶片固定于支承板。当在该状态下进行了磨削工序等之后照射紫外线时,由气体发生剂产生的气体被释放至粘合带的表面与晶片的界面,晶片的至少一部分因气体的压力而被剥离。
专利文献1中记载的晶片的处理方法能够以不损伤处理后的晶片且不发生残胶的方式进行剥离,因此是极为优异的方法。但是,由于半导体装置的逐渐普及,而需要持续不断对晶片的处理方法作进一步的改良。专利文献1中记载的晶片的处理方法如今在生产效率方面已感觉无法令人满意。
现有技术文献
专利文献
专利文献1:日本特开2003-231872号公报
发明内容
发明要解决的课题
本发明鉴于上述现状而完成,其目的在于提供在借助胶粘剂组合物将晶片固定于支承板的状态下对晶片进行处理的晶片的处理方法,该处理方法实现了更高的生产效率。
用于解决课题的方法
本发明为一种晶片的处理方法,其具有:支承板固定工序,该工序是借助胶粘剂组合物将晶片固定于支承板的工序,其中,所述胶粘剂组合物含有胶粘剂成分和通过照射紫外线而产生气体的气体发生剂;晶片处理工序,该工序是对固定于所述支承板的晶片实施处理的工序;以及支承板剥离工序,该工序是对所述处理后的晶片照射紫外线而由所述气体发生剂产生气体,从而将支承板从晶片上剥离的工序,其中,在所述支承板剥离工序中,使用照射强度为100mW/cm2以上的点状或线状的紫外线且按照扫描晶片的整个面的方式进行照射。
以下,详述本发明。
本申请的发明人就专利文献1中记载的晶片的处理方法的整体而对生产效率进行了再次研究。并且发现:对处理后的晶片照射紫外线而使气体发生剂产生气体,从而将支承板从晶片上剥离的工序限制了速率。即,从开始照射紫外线至能够将晶片和支承板剥离为止耗费时间,由此对整体的生产效率带来影响。
在以往的晶片的处理方法中,紫外线均匀地照射晶片的整个面。但是,对于这种方法而言,认为紫外线的照射强度低,气体的产生所带来的剥离压力不充分,因此剥离耗费时间。与此相对,虽然也考虑了使用高照射能量的紫外线照射装置,但毕竟目前能够达到这种程度的大照射量的紫外线照射装置并未在市场上有售,即使在市场有售,价格也会比较昂贵,而且存在产生高温而给晶片带来不良影响的可能。此外,在使紫外线均匀照射晶片的整个面时,所产生的气体留在支承板与胶粘剂组合物之间,因而存在如下可能:破坏薄且脆弱的晶片;或者支承板变形而使晶片侧的胶粘剂组合物发生剥离,无法仅剥离支承板,因而给晶片的处理的作业工序带来较大影响。
若限制到点状或线状的狭窄区域,则能够以100mW/cm2以上的高照射强度照射紫外线的紫外线照射装置在市场上有售。因此,本申请的发明人进一步深入进行了研究,结果发现,使用照射强度100mW/cm2以上的点状或线状的紫外线且按照扫描晶片的整个面的方式进行照射,由此可控制气体产生的部位,能够使所产生的气体不停留在支承板与胶粘剂组合物之间,并且显著缩短从开始照射紫外线至能够剥离晶片与支承板为止的时间,由此能够改善整体的生产效率,从而完成了本发明。
在本发明的晶片的处理方法中,首先,进行借助胶粘剂组合物将晶片固定于支承板的支承板固定工序,其中,所述胶粘剂组合物含有胶粘剂成分、和通过刺激而产生气体的气体发生剂。通过将晶片固定于支承板,从而能够在加工时易于操作,不发生破损。
上述胶粘剂成分没有特别限定,可以含有非固化型胶粘剂、固化型胶粘剂中的任一种。
在上述胶粘剂成分含有非固化型胶粘剂的情况下,通过在后述的支承板剥离工序中对胶粘剂组合物赋予刺激,从而由上述气体发生剂产生气体,柔软的胶粘剂成分的整体因所产生的气体而发泡,在表面形成凹凸,与被粘物的粘接面积减少而发生剥离。
在上述胶粘剂成分含有固化型胶粘剂的情况下,通过在后述的支承板剥离工序中对胶粘剂组合物赋予刺激,从而由上述气体发生剂产生气体,所产生的气体从固化了的胶粘剂成分向与被粘物的界面释放,通过其压力而使被粘物的至少一部分发生剥离。
其中,从能够进行可靠的剥离而不发生残胶的方面考虑,优选含有弹性模量因刺激而上升的固化型胶粘剂。
上述非固化型胶粘剂不受特别限定,例如可举出橡胶系胶粘剂、丙烯酸系胶粘剂、乙烯基烷基醚系胶粘剂、硅酮系胶粘剂、聚酯系胶粘剂、聚酰胺系胶粘剂、氨基甲酸酯系胶粘剂、苯乙烯-二烯嵌段共聚物系胶粘剂等。
上述固化型胶粘剂不受特别限定,例如可举出以聚合性聚合物作为主成分且含有光聚合引发剂或热聚合引发剂的光固化型胶粘剂或热固化型胶粘剂。
对于这种光固化型胶粘剂或热固化型胶粘剂而言,胶粘剂整体因光的照射或加热而均匀且快速地发生聚合交联,进而一体化,因此聚合固化所致的弹性模量的上升变得显著,粘接力大幅降低。另外,在弹性模量上升后的硬的固化物中,若由上述气体发生剂产生气体,则所产生的大部分气体被释放至外部,被释放的气体使粘合剂的粘接面的至少一部分从被粘物剥离,使粘接力降低。
上述聚合性聚合物例如可以通过预先合成在分子内具有官能团的(甲基)丙烯酸系聚合物(以下,称为含官能团(甲基)丙烯酸系聚合物。),再使其与在分子内具有可与上述官能团反应的官能团和自由基聚合性的不饱和键的化合物(以下,称为含官能团不饱和化合物。)反应来获得。
上述含官能团(甲基)丙烯酸系聚合物作为在常温下具有粘合性的聚合物,可与通常的(甲基)丙烯酸系聚合物的情况同样如下所述地获得:以烷基的碳数通常处于2~18的范围的丙烯酸烷基酯和/或甲基丙烯酸烷基酯为主要单体,通过常规方法使其与含官能团单体、以及进一步根据需要所使用的能够与它们共聚的其他改性用单体进行共聚而获得。上述含官能团(甲基)丙烯酸系聚合物的重均分子量通常为20万~200万左右。
作为上述含官能团单体,例如可举出:丙烯酸、甲基丙烯酸等含羧基单体;丙烯酸羟基乙酯、甲基丙烯酸羟基乙酯等含羟基单体;丙烯酸缩水甘油酯、甲基丙烯酸缩水甘油酯等含环氧基单体;丙烯酸异氰酸酯基乙酯、甲基丙烯酸异氰酸酯基乙酯等含异氰酸酯基单体;丙烯酸氨基乙酯、甲基丙烯酸氨基乙酯等含氨基单体等。
作为上述能够共聚的其他改性用单体,例如可举出乙酸乙烯酯、丙烯腈、苯乙烯等通常的用于(甲基)丙烯酸系聚合物的各种单体。
作为与上述含官能团(甲基)丙烯酸系聚合物反应的含官能团不饱和化合物,可以根据上述含官能团(甲基)丙烯酸系聚合物的官能团而使用与上述的含官能团单体同样的化合物。例如,在上述含官能团(甲基)丙烯酸系聚合物的官能团为羧基的情况下,可使用含环氧基单体、含异氰酸酯基单体,在该官能团为羟基的情况下,可使用含异氰酸酯基单体,在该官能团为环氧基的情况下,可使用含羧基单体、丙烯酰胺等含酰胺基单体,在该官能团为氨基的情况下,可使用含环氧基单体。
上述光聚合引发剂例如可举出通过照射250~800nm的波长的光而活性化的光聚合引发剂,作为这种光聚合引发剂,例如可举出:甲氧基苯乙酮等苯乙酮衍生物化合物;苯偶姻丙基醚、苯偶姻异丁基醚等苯偶姻醚系化合物;苯偶酰二甲基缩酮、苯乙酮二乙基缩酮等缩酮衍生物化合物;氧化膦衍生物化合物;双(η5-环戊二烯基)二茂钛衍生物化合物、二苯甲酮、米氏酮、氯代噻吨酮、十二烷基噻吨酮、二甲基噻吨酮、二乙基噻吨酮、α-羟基环己基苯基酮、2-羟基甲基苯基丙烷等光自由基聚合引发剂。这些光聚合引发剂可以单独使用,也可以并用2种以上。
作为上述热聚合引发剂,可举出通过热而分解,从而产生引发聚合固化的活性自由基的热聚合引发剂,例如可举出:过氧化二异丙苯、二叔丁基过氧化物、过氧化苯甲酸叔丁酯(t-ブチルパ一ォキシベンゾエ一ル)、叔丁基过氧化氢、过氧化苯甲酰、过氧化氢异丙苯、过氧化氢二异丙苯、对孟烷过氧化氢、二叔丁基过氧化物等。
但是,为了使本发明的胶粘剂组合物发挥出高耐热性,上述热聚合引发剂优选使用热解温度为200℃以上的热聚合引发剂。这种热解温度高的热聚合引发剂可举出过氧化氢异丙苯、对孟烷过氧化氢、二叔丁基过氧化物等。
这些热聚合引发剂中的市售的产品不受特别限定,例如适宜为PERBUTYL D、PERBUTYL H、PERBUTYL P、PERMENTA H(以上均为日油公司制)等。这些热聚合引发剂可以单独使用,也可以并用2种以上。
上述光固化型胶粘剂、热固化型胶粘剂进一步优选含有自由基聚合性的多官能低聚物或单体。通过含有自由基聚合性的多官能低聚物或单体,从而使光固化性、热固化性提高。
上述多官能低聚物或单体优选为分子量1万以下的物质,更优选为其分子量为5000以下且分子内的自由基聚合性的不饱和键的数量为2~20个的物质以效率良好地实现通过加热或光的照射而引起的粘合剂层的三维网状化。
上述多官能低聚物或单体例如可举出:三羟甲基丙烷三丙烯酸酯、四羟甲基甲烷四丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇单羟基五丙烯酸酯、二季戊四醇六丙烯酸酯,或与上述相同的甲基丙烯酸酯类等。此外,还可以举出:1,4-丁二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、聚丙二醇#700二丙烯酸酯、聚乙二醇二丙烯酸酯、市售的低聚酯丙烯酸酯,与上述同样的甲基丙烯酸酯类等。这些多官能低聚物或单体可以单独使用,也可以并用2种以上。
上述气体发生剂不受特别限定,例如,可以使用偶氮化合物、叠氮化合物等以往公知的气体发生剂。
另外,在对晶片实施药液处理、加热处理或伴有发热的处理的情况下,优选使用即使经过这些处理也不会发生剥离、即对这些处理的耐性优异的气体发生剂。作为这样的气体发生剂,例如还优选下述通式(1)所表示的羧酸化合物或其盐。这种气体发生剂一方面通过照射紫外线等光而产生气体(二氧化碳气体),另一方面具有即使在200℃左右的高温下也不会分解的较高的耐热性。另外,对酸、碱、有机溶剂等药液的耐性也优异。这种气体发生剂即使在严酷的晶片处理工序中,也不会发生反应而产生气体。
式(1)中,R1~R7分别表示氢或有机基团。R1~R7可以相同也可以不同。R1~R7中的2个可以相互键合而形成环状结构。
上述通式(1)中的有机基团例如可举出:甲基、乙基、丙基、丁基、异丁基等烷基;甲氧基、乙氧基等烷氧基;羧基;羟基;硝基;苯基等芳香族基团;萘基、芴基、芘基等多环式烃基;联苯基等环集合烃基;呫吨基等杂环基等。
其中,优选的是:上述通式(1)中的R3~R7中的1个为下述通式(2)所表示的有机基团的情形,或者上述通式(1)中的R3~R7中的相邻的2个彼此键合而形成下述式(3)所表示的环状结构的情形。
式(2)中,R8~R12分别表示氢或有机基团。R8~R12可以相同也可以不同。R8~R12中的2个可以相互键合而形成环状结构。
式(3)中,R13~R16分别表示氢或有机基团。R13~R16可以相同也可以不同。R13~R16中的2个可以相互键合而形成环状结构。
另外,上述通式(1)中的R1优选为甲基。
作为上述式(1)所表示的羧酸化合物的具体例,例如,可举出苯乙酸、二苯基乙酸、三苯基乙酸、2-苯基丙酸、2,2-二苯基丙酸、2,2,2-三苯基丙酸、2-苯基丁酸、α-甲氧基苯基乙酸、扁桃酸、阿卓乳酸、二苯基乙醇酸、莨菪酸、苯基丙二酸、苯基琥珀酸、3-甲基-2-苯基丁酸、邻甲苯乙酸、间甲苯乙酸、4-异丁基-α-甲基苯基乙酸、对甲苯乙酸、1,2-亚苯基二乙酸、1,3-亚苯基二乙酸、1,4-亚苯基二乙酸、2-甲氧基苯乙酸、2-羟基苯乙酸、2-硝基苯乙酸、3-硝基苯乙酸、4-硝基苯乙酸、2-(4-硝基苯基)丙酸、3-(4-硝基苯基)丙酸、4-(4-硝基苯基)丙酸、3,4-二甲氧基苯乙酸、3,4-(亚甲基二氧基)苯乙酸、2,5-二甲氧基苯乙酸、3,5-二甲氧基苯乙酸、3,4,5-三甲氧基苯乙酸、2,4-二硝基苯乙酸、4-联苯乙酸、1-萘乙酸、2-萘乙酸、6-甲氧基-α-甲基-2-萘乙酸、1-芘乙酸、9-芴羧酸或9H-呫吨-9-羧酸等。
其中,上述式(1)所表示的羧酸化合物优选为下述式(1-1)所表示的酮洛芬、或下述式(1-2)所表示的2-呫吨酮乙酸(2キサントン酢酸)。
上述式(1)所表示的羧酸化合物的盐也具有上述式(1)所表示的羧酸化合物来源的骨架,因此若被光照射,则容易引起容易脱羧,能够产生二氧化碳气体。
上述式(1)所表示的羧酸化合物的盐只需通过将上述式(1)所表示的羧酸化合物和碱性化合物在容器中混合,就能够不经由复杂的合成路径简单地制备。
上述碱性化合物不受特别限定,例如可举出胺、肼化合物、氢氧化季铵盐、膦化合物等。
上述胺不受特别限定,可以使用伯胺、仲胺及叔胺中的任一种。
其中,上述碱性化合物优选为单烷基胺或二烷基胺。在使用单烷基胺或二烷基胺的情况下,可以使所得的上述式(1)表示的羧酸化合物的盐的极性发生低极性化,可以提高与胶粘剂成分的溶解性。更优选为碳数6~12的单烷基胺或二烷基胺。
另外,上述气体发生剂还优选为下述通式(4)、通式(5)或通式(6)所表示的四唑化合物或其盐。对于这些气体发生剂而言,也是一方面通过照射紫外线等光而产生气体(氮气),另一方面具有即使在200℃左右的高温下也不会分解的高耐热性。另外,对酸、碱、有机溶剂等药液的耐性也优异。这些气体发生剂即使在后述的严酷的晶片处理工序中也不会发生反应而产生气体。
式(4)~(6)中,R21、R22表示氢、碳数1~7的烷基、亚烷基、苯基、巯基、羟基或氨基。
上述通式(4)~(6)所表示的四唑化合物的盐也具有上述通式(4)~(6)所表示的四唑化合物来源的骨架,因此若被光照射,则能够产生氮气。
上述通式(4)~(6)所表示的四唑化合物的盐不受特别限定,例如可举出钠盐、钾盐、铵盐等。
上述通式(4)~(6)所表示的四唑化合物的盐只需通过将上述通式(4)~(6)所表示的四唑化合物和碱性化合物在容器中混合,就能够不经由复杂的合成路径而简单地制备。
上述碱性化合物不受特别限定,例如可举出胺、肼化合物、氢氧化季铵盐、膦化合物等。
上述胺不受特别限定,也可以使用伯胺、仲胺及叔胺中的任一种。
其中,上述碱性化合物优选为单烷基胺或二烷基胺。在使用单烷基胺或二烷基胺的情况下,可以使所得的上述通式(4)~(6)表示的四唑化合物的盐的极性发生低极性化,可以提高与胶粘剂成分的溶解性。更优选为碳数6~12的单烷基胺或二烷基胺。
上述通式(4)所表示的四唑化合物或其盐不受特别限定,具体而言,例如可举出1H-四唑、5-苯基-1H-四唑、5,5-偶氮双-1H-四唑、5-氨基-1H-四唑、5-甲基-1H-四唑、1-甲基-5-巯基-1H-四唑、1-甲基-5-乙基-1H-四唑、1-(二甲基氨基乙基)-5-巯基-1H-四唑等。
上述通式(5)所表示的四唑化合物或其盐不受特别限定,具体而言,例如可举出5,5’-双四唑二铵盐等。
上述通式(6)所表示的四唑化合物或其盐不受特别限定,具体而言,例如可举出5,5’-双四唑胺单铵盐等。
上述气体发生剂的含量相对于上述胶粘剂成分100重量份的优选的下限为5重量份,优选的上限为50重量份。若上述气体发生剂的含量小于5重量份,则紫外线照射所引起的气体的产生变少,有时无法进行充分的剥离,若超过50重量份,则有时无法完全溶于胶粘剂成分而使粘接力下降。上述气体发生剂的含量的更优选的下限为10重量份,更优选的上限为30重量份。
上述胶粘剂组合物可以含有光敏剂。
上述光敏剂具有放大光对上述气体发生剂带来的刺激的效果,因此可以通过更少的光的照射而使气体释放。另外,可以通过更广的波长区域的光使气体释放。
上述光敏剂只要是耐热性优异的光敏剂,则不受特别限定。
耐热性优异的光敏剂例如可举出至少具有1个以上烷氧基的多环芳香族化合物。其中,优选具有一部分经缩水甘油基或羟基取代了的烷氧基的取代烷氧基多环芳香族化合物。这些光敏剂的耐升华性高,可以在高温下使用。另外,通过将部分烷氧基用缩水甘油基或羟基取代,从而可以提高在上述胶粘剂成分中的溶解性,可以防止渗出。
上述多环芳香族化合物优选为蒽衍生物。上述烷氧基优选为碳数1~18,更优选为碳数1~8。
上述至少具有1个以上烷氧基的多环芳香族化合物例如可举出:9,10-二甲氧基蒽、2-乙基-9,10-二甲氧基蒽、2-叔丁基-9,10-二甲氧基蒽、2,3-二甲基-9,10-二甲氧基蒽、9-甲氧基-10-甲基蒽、9,10-二乙氧基蒽、2-乙基-9,10-二乙氧基蒽、2-叔丁基-9,10-二乙氧基蒽、2,3-二甲基-9,10-二乙氧基蒽、9-乙氧基-10-甲基蒽、9,10-二丙氧基蒽、2-乙基-9,10-二丙氧基蒽、2-叔丁基-9,10-二丙氧基蒽、2,3-二甲基-9,10-二丙氧基蒽、9-异丙氧基-10-甲基蒽、9,10-二丁氧基蒽、9,10-二苄氧基蒽、2-乙基-9,10-二苄氧基蒽、2-叔丁基-9,10-二苄氧基蒽、2,3-二甲基-9,10-二苄氧基蒽、9-苄氧基-10-甲基蒽、9,10-二-α-甲基苄氧基蒽、2-乙基-9,10-二-α-甲基苄氧基蒽、2-叔丁基-9,10-二-α-甲基苄氧基蒽、2,3-二甲基-9,10-二-α-甲基苄氧基蒽、9-(α-甲基苄氧基)-10-甲基蒽、9,10-二(2-羟基乙氧基)蒽、2-乙基-9,10-二(2-羧基乙氧基)蒽等蒽衍生物等。
上述具有一部分经缩水甘油基或羟基取代了的烷氧基的取代烷氧基多环芳香族化合物例如可举出:9,10-二(缩水甘油氧基)蒽、2-乙基-9,10-二(缩水甘油氧基)蒽、2-叔丁基-9,10-二(缩水甘油氧基)蒽、2,3-二甲基-9,10-二(缩水甘油氧基)蒽、9-(缩水甘油氧基)-10-甲基蒽、9,10-二(2-乙烯氧基乙氧基)蒽、2-乙基-9,10-二(2-乙烯氧基乙氧基)蒽、2-叔丁基-9,10-二(2-乙烯氧基乙氧基)蒽、2,3-二甲基-9,10-二(2-乙烯氧基乙氧基)蒽、9-(2-乙烯氧基乙氧基)-10-甲基蒽、9,10-二(3-甲基-3-氧杂环丁基甲氧基)蒽、2-乙基-9,10-二(3-甲基-3-氧杂环丁基甲氧基)蒽、2-叔丁基-9,10-二(3-甲基-3-氧杂环丁基甲氧基)蒽、2,3-二甲基-9,10-二(3-甲基-3-氧杂环丁基甲氧基)蒽、9-(3-甲基-3-氧杂环丁基甲氧基)-10-甲基蒽、9,10-二(对环氧基苯基甲氧基)蒽、2-乙基-9,10-二(对环氧基苯基甲氧基)蒽、2-叔丁基-9,10-二(对环氧基苯基甲氧基)蒽、2,3-二甲基-9,10-二(对环氧基苯基甲氧基)蒽、9-(对环氧基苯基甲氧基)-10-甲基蒽、9,10-二(对乙烯基苯基甲氧基)蒽、2-乙基-9,10-二(对乙烯基苯基甲氧基)蒽、2-叔丁基-9,1-二(对乙烯基苯基甲氧基)蒽、2,3-二甲基-9,10-二(对乙烯基苯基甲氧基)蒽、9-(对乙烯基苯基甲氧基)-10-甲基蒽、9,10-二(2-羟基乙氧基)蒽、9,10-二(2-羟基丙氧基)蒽、9,10-二(2-羟基丁氧基)蒽、9,10-二(2-羟基-3-丁氧基丙氧基)蒽、9,10-二(2-羟基-3-(2-乙基己氧基)丙氧基)蒽、9,10-二(2-羟基-3-烯丙氧基丙氧基)蒽、9,10-二(2-羟基-3-苯氧基丙氧基)蒽、9,10-二(2,3-二羟基丙氧基)蒽等。
对于上述光敏剂的含量而言,相对于上述胶粘剂成分100重量份的优选的下限为0.05重量份,优选的上限为10重量份。若上述光敏剂的含量小于0.05重量份,则有时无法获得充分的增敏效果,若超过10重量份,则源自光敏剂的残留物增加,有时将无法进行充分的剥离。上述光敏剂的含量的更优选的下限为0.1重量份,更优选的上限为5重量份。
出于实现作为粘合剂的凝聚力的调节的目的,上述胶粘剂组合物可以根据需要而适当含有异氰酸酯化合物、三聚氰胺化合物、环氧化合物等通常的配合于粘合剂的各种多官能性化合物。
上述胶粘剂组合物可以含有增塑剂、树脂、表面活性剂、蜡、微粒填充剂等公知的添加剂。
本发明的晶片的处理方法中使用的胶粘剂组合物,即含有胶粘剂成分、和通过照射紫外线而产生气体的气体发生剂的胶粘剂组合物,也是本发明之一。
在上述支承板固定工序中,晶片与支承板的粘接可通过上述胶粘剂组合物来直接粘接,也可以使用在至少一面具有包含上述胶粘剂组合物的胶粘剂层的双面粘合带来进行粘接。
上述双面粘合带可以是在基材的两面具有粘合剂层的支承带,也可以是不具有基材的无支承带。
在上述双面粘合带为支承带的情况下,上述基材例如可举出:由丙烯酸、烯烃、聚碳酸酯、氯乙烯、ABS、聚对苯二甲酸乙二醇酯(PET)、尼龙、氨基甲酸酯、聚酰亚胺等透明的树脂所构成的片材;具有网眼状的结构的片材;开孔的片材等。
在本发明的晶片的处理方法中,接下来,进行对固定于上述支承板的晶片实施处理的晶片处理工序。
作为对上述晶片的处理,例如可举出将晶片磨削至一定厚度为止的研削处理等。另外,近年来也进行药液处理、加热处理或伴随发热的处理。
作为上述药液处理,例如可举出:电解镀敷、无电解镀敷等镀敷处理;利用氢氟酸、氢氧化四甲基铵水溶液(TMAH)等的湿式蚀刻处理;利用N-甲基-2-吡咯烷酮、单乙醇胺、DMSO等的抗蚀剂剥离工艺;利用浓硫酸、氨水、过氧化氢水等的洗涤工艺等。
作为上述加热处理或伴随发热的处理,例如可举出溅射、蒸镀、蚀刻、化学气相生长法(CVD)、物理气相生长法(PVD)、抗蚀剂涂布·图案化、回焊等。
本发明的晶片的处理工序可以在后述的支承板剥离工序之前,具有将切割胶带贴附于上述处理后的晶片的处理面的切割胶带贴附工序。通过预先贴附切割胶带,从而能够在支承板剥离工序中将支承板剥离之后迅速地进入切割工序。
本发明的晶片的处理方法中,接下来进行支承板剥离工序,该工序是对上述处理后的晶片照射紫外线而由气体产生剂产生气体,从而将支承板从晶片上剥离的工序。由于将上述晶片和支承板粘接的胶粘剂组合物含有气体产生剂,因此可以通过照射紫外线而容易地使晶片从支承板剥离,而不会使晶片破损。
在上述支承板剥离工序中,使用照射强度为100mW/cm2以上的点状或线状的紫外线且按照扫描晶片的整个面的方式进行照射。由此,可以显著缩短从开始照射紫外线至能够将晶片与支承板剥离为止的时间,由此改善整体的生产效率。若紫外线的照射强度小于100mW/cm2,则有时无法产生充分量的气体,剥离压力变低,从而无法剥离。优选使用照射强度为200mW/cm2以上、更优选照射强度为300mW/cm2以上的点状或线状的紫外线且按照扫描晶片的整个面的方式进行照射。
上述支承板剥离工序中的点状或线状的紫外线的照射强度的优选的上限为2000mW/cm2。若紫外线的照射强度超过2000mW/cm2,则发热量变大,有时会烤焦上述胶粘剂组合物。紫外线的照射强度的更优选的上限为1750mW/cm2,进一步优选的上限为1600mW/cm2。
在上述支承板剥离工序中,使用照射强度为100mW/cm2以上的点状或线状的紫外线按照扫描晶片的整个面的方式进行照射时的扫描速度的优选的下限为1mm/sec,优选的上限为200mm/sec。若上述扫描速度小于1mm/sec,则有时上述胶粘剂组合物因来自紫外线的光源的热而烤焦,若超过200mm/sec,则有时来自上述胶粘剂组合物的气体的产生变得不充分。上述扫描速度的更优选的下限为3mm/sec以上,更优选的上限为150mm/sec,进一步优选的上限为100mm/sec。
使用图1,对使用上述照射强度为100mW/cm2以上的点状的紫外线按照扫描晶片的整个面的方式进行照射的具体方法的一例进行说明。
图1中,处理后的晶片1借助胶粘剂组合物2被固定于支承板3。在这种状态下,从支承板3侧,利用紫外线照射口4照射照射强度为100mW/cm2以上的点状的紫外线(图1(a))。紫外线以点状的形式进行照射,因此晶片的整个面并未被照射,但通过边进行照射边使紫外线照射口4前后左右地移动,从而能够按照扫描晶片的整个面的方式进行照射(图1(b))。
需要说明的是,图1中虽然使紫外线照射口4移动来进行扫描,但即使将处理后的晶片1/胶粘剂组合物2/支承板3的层叠体侧进行移动,也可以获得同样的效果。
将表示使用点状的紫外线且按照扫描晶片的整个面的方式照射紫外线的情况下的扫描图案的一例的示意图示于图2。
图2(a)为按照紫外线照射的轨迹从晶片的外周部朝向中心部地成为螺旋状的方式照射点状的紫外线的扫描模式。
图2(b)为按照紫外线照射的轨迹往复于晶片的整个面的方式照射点状的紫外线的扫描模式。
图2(c)为按照紫外线照射的轨迹往复于晶片一半面、然后再往复于晶片的另一半面的方式照射点状的紫外线的扫描模式。
图2(d)为按照紫外线照射的轨迹往复于晶片的外周部和中心部并且覆盖晶片的整个面的方式照射点状的紫外线的扫描模式。
使用图3,对使用上述照射强度为100mW/cm2以上的线状的紫外线且按照扫描晶片的整个面的方式进行照射的具体方法的一例进行说明。
图3中,处理后的晶片1借助胶粘剂组合物2被固定于支承板3。在这种状态下,从支承板3侧,利用紫外线照射口5照射照射强度为100mW/cm2以上的线状的紫外线(图3(a))。紫外线以线状的形式进行照射,因此晶片的整个面并未被照射,但通过边进行照射边使紫外线照射口5左右地移动,从而能够按照扫描晶片的整个面的方式进行照射(图3(b))。
需要说明的是,图3中虽然使紫外线照射口5移动来进行扫描,但即使将处理后的晶片1/胶粘剂组合物2/支承板3的层叠体侧载置于例如传送带来进行移动,也可以获得同样的效果。
例如,优选如图2(a)~(d)所记载的那样,从晶片的外周部开始照射点状或线状的紫外线。由此,能够更可靠地进行支承板的剥离。
需要说明的是,进行点状的紫外线的照射时的扫描的方向不受特别限定,可以为顺时针方向,也可以为逆时针方向。另外,进行线状的紫外线的照射时的扫描的方向不受特别限定,可以从右侧开始,也可以从左侧开始。
能够照射上述照射强度为100mW/cm2以上的点状或线状的紫外线的紫外线照射装置不受特别限定,例如,可以使用市售的高压汞灯、中压汞灯、低压汞灯、金属卤化物灯、LED等、点式UV装置、脉冲激光UV照射装置、传送带式UV灯、扫描式UV灯等。
具体而言,例如可以使用Ushio电机株式会社制“SPOT-CURE”、EYEGRAPHICS公司制“EYE GRANTAGE”等市售的紫外线照射装置。
根据本发明的晶片的处理方法,能够控制气体产生的部位、不会使所产生的气体停留于支承板与胶粘剂组合物之间,并且,显著缩短从开始照射紫外线至能够将晶片与支承板剥离为止的时间,由此能够改善整体的生产效率。
通过本发明的晶片的处理方法进行处理而得的晶片也是本发明之一。
发明效果
根据本发明,能够提供在借助胶粘剂组合物将晶片固定于支承板的状态下对晶片进行处理的晶片的处理方法,该处理方法实现了更高的生产效率的晶片的处理方法。
附图说明
图1为对使用照射强度为100mW/cm2以上的点状的紫外线且按照扫描晶片的整个面的方式进行照射的方法的一例进行说明的示意图。
图2为表示使用点状的紫外线且按照扫描晶片的整个面的方式照射紫外线的情况下的扫描模式的一例的示意图。
图3为对使用照射强度为100mW/cm2以上的线状的紫外线且按照扫描晶片的整个面的方式进行照射的方法的一例进行说明的示意图。
具体实施方式
以下列举实施例进一步详细说明本发明的方式,但本发明并不仅限定于这些实施例。
(实施例1)
(1)粘合带的制备
准备具备温度计、搅拌机、冷却管的反应器,向该反应器内加入丙烯酸2-乙基己酯94重量份、丙烯酸1重量份、丙烯酸2-羟乙酯5重量份、十二烷硫醇0.01重量份和乙酸乙酯180重量份,然后对反应器进行加热,开始回流。接着,在上述反应器内添加作为聚合引发剂的1,1-双(过氧化叔己基)-3,3,5-三甲基环己烷0.01重量份,在回流下引发聚合。接下来,在开始聚合1小时后及2小时后,还分别添加1,1-双(过氧化叔己基)-3,3,5-三甲基环己烷0.01重量份,进一步在开始聚合4小时后添加过氧化新戊酸叔己酯0.05重量份,使聚合反应继续。然后,在开始聚合8小时后,得到固体成分55重量%、重均分子量60万的丙烯酸系共聚物。
相对于包含所得的丙烯酸系共聚物的乙酸乙酯溶液的树脂固体成分100重量份,加入甲基丙烯酸2-异氰酸根合乙酯3.5重量份而使其反应,进一步地,相对于反应后的乙酸乙酯溶液的树脂固体成分100重量份而混合光聚合引发剂(Esacure One、日本Siber Hegner公司制)0.1重量份、多异氰酸酯系交联剂(CORONATE L45、日本聚氨酯公司制)2.5重量份,从而制备出胶粘剂(1)的乙酸乙酯溶液。
相对于胶粘剂(1)的乙酸乙酯溶液的树脂固形成分100重量份,将作为气体发生剂的双四唑Na盐(增田化学公司制)20重量份、作为光敏剂的9,10-二缩水甘油氧基蒽1重量份混合,得到胶粘剂组合物。
将所得的胶粘剂组合物按照使干燥皮膜的厚度达到30μm的方式利用刮刀涂敷于对一面实施了电晕处理后的厚度50μm的透明的聚对苯二甲酸乙二醇酯膜的电晕处理面上,在110℃下加热5分钟而使涂敷溶液干燥。之后,在40℃下静置养护3天,得到粘合带。
(2)晶片的处理
将所得的粘合带切割成直径20cm的圆形,在真空中贴附于直径20cm且厚度约750μm的硅晶片。在与贴附于硅晶片的面的相反面,在真空中粘贴直径20cm且厚度1mm的石英玻璃板,从而得到层叠体。
对所得的层叠体的晶片侧进行研削磨削(グテインド研削)及研磨,磨削至厚度为50μm为止。
对所得的层叠体,从玻璃板侧使用传送带式UV照射机(EYEGRAPHICS公司制“EYE GRANTAGE”),使紫外线照射口左右移动,并且按照使照射强度为300mW/cm2的线状的紫外线扫描晶片的整个面的方式照射254nm的紫外线。需要说明的是,紫外线照射口的移动按照扫描模式成为图3的方式来进行,并且按照从开始照射紫外线至完成晶片整个面的扫描为止的时间达到30秒的方式来进行(扫描速度:6.5mm/sec)。之后,从玻璃板侧目视观察,在确认气体充分产生后,将玻璃板与晶片剥离。
从上述紫外线的照射开始至玻璃板与晶片的剥离为止需要2分钟。
(实施例2)
将通过与实施例1相同的方法而得到的粘合带切割为直径20cm的圆形,在真空中贴附于直径20cm且厚度约750μm的硅晶片。在与贴附于硅晶片的面的相反面,在真空中粘贴直径20cm且厚度1mm的石英玻璃板,从而得到层叠体。
从玻璃板侧使用传送带式UV照射机(EYE GRAPHICS公司制“EYEGRANTAGE”),使紫外线照射口左右移动,并且使照射强度为100mW/cm2的线状的紫外线扫描晶片的整个面的方式照射254nm的紫外线,除此以外,通过与实施例1相同的方法进行晶片的处理。之后,从玻璃板侧目视观察,在确认气体充分产生后,将玻璃板与晶片剥离。
从上述紫外线的照射开始至玻璃板与晶片的剥离为止需要4分30秒。
(实施例3)
将通过与实施例1相同的方法而得到的粘合带切割为直径20cm的圆形,在真空中贴附于直径20cm且厚度约750μm的硅晶片。在与贴附于硅晶片的面的相反面,在真空中粘贴直径20cm且厚度1mm的石英玻璃板,从而得到层叠体。
对所得的层叠体的晶片侧进行研削磨削及研磨,磨削至厚度为50μm为止。
对所得的层叠体,从玻璃板侧使用点式UV(Ushio电机公司制“SPOT-CURE”),使紫外线照射口前后左右移动,并且以照射强度为500mW/cm2的2cm×2cm的面积并按照使紫外线扫描晶片的整个面的方式照射254nm的紫外线。需要说明的是,紫外线照射口的移动按照成为图2(a)的方式来进行,并且按照从开始照射紫外线至完成晶片整个面的扫描为止的时间达到180秒的方式来进行(扫描速度:11mm/sec)。之后,从玻璃板侧目视观察,在确认气体充分产生后,将玻璃板与晶片剥离。
从上述紫外线的照射开始至玻璃板与晶片的剥离为止需要4分钟。
(实施例4)
将通过与实施例1相同的方法而得到的粘合带切割为直径20cm的圆形,在真空中贴附于直径20cm且厚度约750μm的硅晶片。在与贴附于硅晶片的面的相反面,在真空中粘贴直径20cm且厚度1mm的石英玻璃板,从而得到层叠体。
对所得的层叠体的晶片侧进行研削磨削及研磨,磨削至厚度为50μm为止。
对所得的层叠体,从玻璃板侧使用点式UV(Ushio电机公司制“SPOT-CURE”),使紫外线照射口前后左右移动,并且以照射强度为500mW/cm2的2cm×2cm的面积并按照使紫外线扫描晶片的整个面的方式照射254nm的紫外线。需要说明的是,紫外线照射口的移动按照成为图2(b)的方式来进行,并且按照从开始照射紫外线至完成晶片整个面的扫描为止的时间为180秒的方式来进行(扫描速度:11mm/sec)。之后,从玻璃板侧目视观察,在确认气体充分产生后,将玻璃板与晶片剥离。
从上述紫外线的照射开始至玻璃板与晶片的剥离为止需要4分钟。
(实施例5)
将通过与实施例1相同的方法而得到的粘合带切割为直径20cm的圆形,在真空中贴附于直径20cm且厚度约750μm的硅晶片。在与贴附于硅晶片的面的相反面,在真空中粘贴直径20cm且厚度1mm的石英玻璃板,从而得到层叠体。
对所得的层叠体的晶片侧进行研削磨削及研磨,磨削至厚度为50μm为止。
对所得的层叠体,从玻璃板侧使用点式UV(Ushio电机公司制“SPOT-CURE”),使紫外线照射口前后左右移动,并且以照射强度为500mW/cm2的2cm×2cm的面积并按照使紫外线扫描晶片的整个面的方式照射254nm的紫外线。需要说明的是,紫外线照射口的移动按照成为图2(c)的方式来进行,并且按照从开始照射紫外线至完成晶片整个面的扫描为止的时间达到200秒的方式来进行(扫描速度:10mm/sec)。之后,从玻璃板侧目视观察,在确认气体充分产生后,将玻璃板与晶片剥离。
从上述紫外线的照射开始至玻璃板与晶片的剥离为止需要4分钟。
(实施例6)
将通过与实施例1相同的方法而得到的粘合带切割为直径20cm的圆形,在真空中贴附于直径20cm且厚度约750μm的硅晶片。在与贴附于硅晶片的面的相反面,在真空中粘贴直径20cm且厚度1mm的石英玻璃板,从而得到层叠体。
对所得的层叠体的晶片侧进行研削磨削及研磨,磨削至厚度为50μm为止。
对所得的层叠体,从玻璃板侧使用点式UV(Ushio电机公司制“SPOT-CURE”),使紫外线照射口前后左右移动,并且以照射强度为500mW/cm2的2cm×2cm的面积并按照使紫外线扫描晶片的整个面的方式照射254nm的紫外线。需要说明的是,紫外线照射口的移动按照成为图2(d)的方式来进行,并且按照从开始照射紫外线至完成晶片整个面的扫描为止的时间达到200秒的方式来进行(扫描速度:10mm/sec)。之后,从玻璃板侧目视观察,在确认气体充分产生后,将玻璃板与晶片剥离。
从上述紫外线的照射开始至玻璃板与晶片的剥离为止需要4分钟。
(比较例1)
将通过与实施例1相同的方法制得的粘合带切割为直径20cm的圆形,在真空中将其贴附于直径20cm且厚度约750μm的硅晶片。在贴附于硅晶片的面的相反面,在真空中贴附直径20cm且厚度1mm的石英玻璃板,从而得到层叠体。
对所得的层叠体的晶片侧进行研削磨削及研磨,磨削至厚度为50μm为止。
对所得的层叠体的整个面,从玻璃板侧使用超高压汞灯,按照对玻璃板表面的照射强度为80mW/cm2的方式调节照射强度而照射6分钟254nm的紫外线。
之后,从玻璃板侧目视观察,在确认到气体充分产生后,将玻璃板与晶片剥离。
从上述紫外线的照射至玻璃板与晶片的剥离为止需要10分钟。所产生的气体停留在玻璃板与粘接带之间,晶片侧局部地发生剥离,因此将玻璃板从晶片剥离耗费了时间。
产业上的可利用性
根据本发明,能够提供一种在借助胶粘剂组合物将晶片固定于支承板的状态下对晶片进行处理的晶片的处理方法,该处理方法实现了更高的生产效率。
符号说明
1 处理后的晶片
2 胶粘剂组合物
3 支承板
4 紫外线照射口
5 紫外线照射口
Claims (11)
1.一种晶片的处理方法,其特征在于,具有:支承板固定工序,该工序是借助胶粘剂组合物将晶片固定于支承板的工序,其中,所述胶粘剂组合物含有胶粘剂成分和通过照射紫外线而产生气体的气体发生剂;晶片处理工序,该工序是对固定于所述支承板的晶片实施处理的工序;以及支承板剥离工序,该工序是对所述处理后的晶片照射紫外线而由所述气体发生剂产生气体,从而将支承板从晶片上剥离的工序,
其中,
在所述支承板剥离工序中,使用照射强度为100mW/cm2以上的点状或线状的紫外线且按照扫描晶片的整个面的方式进行照射。
2.根据权利要求1所述的晶片的处理方法,其特征在于,在支承板剥离工序中,按照紫外线照射的轨迹从晶片的外周部朝向中心部地成为螺旋状的方式照射点状的紫外线。
3.根据权利要求1所述的晶片的处理方法,其特征在于,在支承板剥离工序中,按照紫外线照射的轨迹往复于晶片的整个面的方式照射点状的紫外线。
4.根据权利要求1所述的晶片的处理方法,其特征在于,在支承板剥离工序中,按照紫外线照射的轨迹往复于晶片的一半面,然后再往复于晶片的另一半面的方式照射点状的紫外线。
5.根据权利要求1所述的晶片的处理方法,其特征在于,在支承板剥离工序中,按照紫外线照射的轨迹往复于晶片的外周部和中心部并且覆盖晶片的整个面的方式照射点状的紫外线。
6.根据权利要求1所述的晶片的处理方法,其特征在于,在支承板剥离工序中,边使晶片或紫外线照射口左右移动,边照射线状的紫外线。
7.根据权利要求1所述的晶片的处理方法,其特征在于,在支承板剥离工序中,从晶片的外周部开始照射点状或线状的紫外线。
8.根据权利要求1所述的晶片的处理方法,其特征在于,在支承板剥离工序中,所照射的点状或线状的紫外线的照射强度为2000mW/cm2以下。
9.根据权利要求1所述的晶片的处理方法,其特征在于,在支承板剥离工序中,使用照射强度为100mW/cm2以上的点状或线状的紫外线并且按照扫描晶片的整个面的的方式进行照射时的扫描速度为1~200mm/sec。
10.一种晶片,其特征在于,利用权利要求1~9中任一项所述的晶片的处理方法进行了处理。
11.一种胶粘剂组合物,其特征在于,是权利要求1~9中任一项所述的晶片的处理方法中使用的胶粘剂组合物,该胶粘剂组合物含有胶粘剂成分、和通过照射紫外线而产生气体的气体发生剂。
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