TW201411710A - 晶圓之處理方法 - Google Patents
晶圓之處理方法 Download PDFInfo
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- TW201411710A TW201411710A TW102128062A TW102128062A TW201411710A TW 201411710 A TW201411710 A TW 201411710A TW 102128062 A TW102128062 A TW 102128062A TW 102128062 A TW102128062 A TW 102128062A TW 201411710 A TW201411710 A TW 201411710A
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- IARFUFQDQFCIOT-UHFFFAOYSA-N ethylbenzene 2-sulfanylacetic acid Chemical compound OC(=O)CS.CCC1=CC=CC=C1 IARFUFQDQFCIOT-UHFFFAOYSA-N 0.000 description 1
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- 229910001507 metal halide Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
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Abstract
本發明之目的在於提供一種晶圓之處理方法,其係於經由接著劑組成物將晶圓固定在支撐板之狀態下對晶圓進行處理者,可實現更高之生產效率。本發明係一種晶圓之處理方法,其具有如下步驟:支撐板固定步驟,經由接著劑組成物而將晶圓固定於支撐板,該接著劑組成物含有接著劑成分及藉由照射紫外線而產生氣體之氣體產生劑;晶圓處理步驟,對固定於上述支撐板之晶圓實施處理;及支撐板剝離步驟,對上述處理後之晶圓照射紫外線而使上述氣體產生劑產生氣體,將支撐板自晶圓剝離;於上述支撐板剝離步驟中,使用照射強度100 mW/cm2以上之點狀或線狀之紫外線以掃描晶圓之整個面的方式進行照射。
Description
本發明係關於一種晶圓之處理方法,其係於經由接著劑組成物將晶圓固定於支撐板之狀態下對晶圓進行處理者,可實現更高之生產效率。
於半導體晶片之製造步驟中,為了於晶圓之加工時容易操作且不破損,而將晶圓固定於支撐板。例如,於將自高純度之矽單晶等切出之厚膜晶圓研削至特定厚度而製成薄膜晶圓之情形時,經由接著劑組成物將厚膜晶圓接著於支撐板。
將晶圓接著於支撐板之接著劑組成物係要求於加工步驟中儘可能牢固地固定晶圓之高黏著性,並且於步驟結束後可不損傷晶圓而剝離(以下亦稱為「高接著易剝離」)。
作為實現高接著易剝離之接著劑組成物,專利文獻1中記載有使用具有含有偶氮化合物等藉由照射紫外線而產生氣體之氣體產生劑之黏著層的雙面黏著帶之晶圓之處理方法。專利文獻1所記載之晶圓之處理方法中,首先,經由雙面黏著帶將晶圓固定於支撐板。若於該狀態下進行研削步驟等後照射紫外線,則由氣體產生劑產生之氣體釋出至膠帶之表面與晶圓之界面,至少一部分因其壓力而剝離。
專利文獻1所記載之晶圓之處理方法可不損傷處理後之晶
圓、且亦不產生糊劑殘留而進行剝離,因此為極其優異之方法。然而,由於半導體裝置逐漸普及,故而晶圓之處理方法始終持續要求進一步之改良。專利文獻1所記載之晶圓之處理方法目前就生產效率方面而言亦令人感覺不完善。
專利文獻1:日本特開2003-231872號公報
本發明鑒於上述現狀,目的在於提供一種晶圓之處理方法,其係於經由接著劑組成物將晶圓固定於支撐板之狀態下對晶圓進行處理者,可實現更高之生產效率。
本發明係一種晶圓之處理方法,其具有下述步驟:支撐板固定步驟,經由接著劑組成物而將晶圓固定於支撐板,該接著劑組成物含有接著劑成分及藉由照射紫外線而產生氣體之氣體產生劑;晶圓處理步驟,對固定於上述支撐板之晶圓實施處理;及支撐板剝離步驟,對上述處理後之晶圓照射紫外線而使上述氣體產生劑產生氣體,將支撐板自晶圓剝離;於上述支撐板剝離步驟中,使用照射強度100mW/cm2以上之點狀或線狀之紫外線以掃描晶圓之整個面的方式進行照射。
以下,詳細敍述本發明。
本申請案之發明者對專利文獻1所記載之晶圓之處理方法整體已進行生產效率之重新研究。然後發現,對處理後之晶圓照射紫外線而使氣體產生劑產生氣體從而將支撐板自晶圓剝離的步驟限制了速度。即,自開始紫外線之照射至可將晶圓與支撐板剝離耗費時間,由此對整體之生產效率造成影響。
先前之晶圓之處理方法中,紫外線均勻地照射至晶圓之整個面。然而,認為於該方法中,紫外線之照射強度低,由氣體之產生帶來之剝離壓力不
充分,因此剝離耗時。相對於此,亦考慮使用高照射能之紫外線照射裝置,但畢竟現階段尚未有市售達到該程度之大照射量之紫外線照射裝置,假設即便存在,價格亦較高,而且亦有產生高溫而對晶圓造成不良影響之虞。進而,於將紫外線均勻地照射至晶圓之整個面之情形時,亦有如下擔憂:所產生之氣體停留於支撐板與接著劑組成物之間,由此破壞薄且脆弱之晶圓,或支撐板變形而晶圓側之接著劑組成物剝離,無法僅剝離支撐板而對晶圓之處理之作業步驟造成大影響。
若縮小範圍至點狀或線狀之狹小區域,則市售有可以100mW/cm2以上之高照射強度照射紫外線之紫外線照射裝置。因此,本申請案之發明人進而進行潛心研究,結果發現,使用照射強度100mW/cm2以上之點狀或線狀之紫外線以掃描晶圓整個面之方式進行照射,藉此可控制氣體產生之部位,而使所產生之氣體不停留於支撐板與接著劑組成物之間,且明顯縮短自開始照射紫外線至可將晶圓與支撐板剝離為止之時間,藉此可改善整體之生產效率,從而完成本發明。
本發明之晶圓之處理方法中,首先,進行支撐板固定步驟:經由接著劑組成物將晶圓固定於支撐板,該接著劑組成物含有接著劑成分及藉由刺激而產生氣體之氣體產生劑。藉由將晶圓固定於支撐板,可使加工時容易操作且不破損。
上述接著劑成分並無特別限定,亦可含有非硬化型接著劑、硬化型接著劑中之任一者。
於上述接著劑成分含有非硬化型接著劑之情形時,於下述之支撐板剝離步驟中,藉由對接著劑組成物賦予刺激而由上述氣體產生劑產生氣體,並由所產生之氣體使柔軟之接著劑成分之整體發泡而於表面形成凹凸,與被接著體之接著面積減少而剝離。
於上述接著劑成分含有硬化型接著劑之情形時,於下述之支撐板剝離
步驟中,藉由對接著劑組成物賦予刺激而由上述氣體產生劑產生氣體,所產生之氣體自硬化之接著劑成分向與被接著體之界面釋出,被接著體之至少一部分因其壓力而剝離。
其中,由於可不產生糊劑殘留而進行確實之剝離,故而較佳為含有彈性模數因刺激而上升之硬化型接著劑。
上述非硬化型接著劑並無特別限定,例如可列舉橡膠系接著劑、丙烯酸系接著劑、乙烯基烷基醚系接著劑、聚矽氧系接著劑、聚酯系接著劑、聚醯胺系接著劑、胺甲酸乙酯系接著劑、苯乙烯-二烯嵌段共聚物系接著劑等。
上述硬化型接著劑並無特別限定,例如可列舉以聚合性聚合物作為主成分、含有光聚合起始劑或熱聚合起始劑之光硬化型接著劑或熱硬化型接著劑。
此種光硬化型接著劑或熱硬化型接著劑藉由光之照射或加熱,接著劑整體均勻且快速地聚合交聯而一體化,因此由聚合硬化引起之彈性模數之上升較為明顯,接著力大幅降低。又,若於彈性模數上升之硬的硬化物中使上述氣體產生劑產生氣體,則所產生之氣體之大半釋出至外部,被釋出之氣體使黏著劑之接著面之至少一部分自被接著體剝離而使接著力降低。
上述聚合性聚合物例如可藉由如下方式獲得:預先合成分子內具有官能基之(甲基)丙烯酸系聚合物(以下稱為含有官能基之(甲基)丙烯酸系聚合物),使其與下述化合物(以下稱為含有官能基之不飽和化合物)進行反應,該化合物於分子內具有與上述官能基反應之官能基及自由基聚合性不飽和鍵。
上述含有官能基之(甲基)丙烯酸系聚合物作為於常溫下具有黏著性之聚合物,與一般之(甲基)丙烯酸系聚合物之情形同樣地藉由如下方式獲得:以烷基之碳數通常處於2~18之範圍之丙烯酸烷基酯及/或甲
基丙烯酸烷基酯作為主單體,利用常法使其與含有官能基之單體、進而視需要與可與其等共聚合之其他改質用單體共聚合。上述含有官能基之(甲基)丙烯酸系聚合物之重量平均分子量通常為20萬~200萬左右。
作為上述含有官能基之單體,例如可列舉:丙烯酸、甲基丙烯酸等含有羧基之單體;丙烯酸羥乙酯、甲基丙烯酸羥乙酯等含有羥基之單體;丙烯酸縮水甘油酯、甲基丙烯酸縮水甘油酯等含有環氧基之單體;丙烯酸異氰酸酯基乙酯、甲基丙烯酸異氰酸酯基乙酯等含有異氰酸酯基之單體;丙烯酸胺基乙基酯、甲基丙烯酸胺基乙基酯等含有胺基之單體等。
作為上述可共聚合之其他改質用單體,例如可列舉乙酸乙烯酯、丙烯腈、苯乙烯等一般之用於(甲基)丙烯酸系聚合物之各種單體。
作為與上述含有官能基之(甲基)丙烯酸系聚合物反應之含有官能基之不飽和化合物,可對應於上述含有官能基之(甲基)丙烯酸系聚合物之官能基而使用與上述含有官能基之單體相同者。例如,於上述含有官能基之(甲基)丙烯酸系聚合物之官能基為羧基之情形時,使用含有環氧基之單體或含有異氰酸酯基之單體,於該官能基為羥基之情形時,使用含有異氰酸酯基之單體,於該官能基為環氧基之情形時,使用含有羧基之單體或丙烯醯胺等含有醯胺基之單體,於該官能基為胺基之情形時,使用含有環氧基之單體。
上述光聚合起始劑例如可列舉藉由照射250~800nm之波長之光而活性化者,作為此種光聚合起始劑,例如可列舉:甲氧基苯乙酮等苯乙酮衍生物化合物;安息香丙醚、安息香異丁醚等安息香醚系化合物;苯偶醯二甲基縮酮、苯乙酮二乙基縮酮等縮酮衍生物化合物;氧化膦衍生物化合物;雙(η5-環戊二烯基)二茂鈦衍生物化合物、二苯甲酮、米其勒酮、氯9-氧硫、十二烷基9-氧硫、二甲基9-氧硫、二乙基9-氧硫、α-羥基環己基苯基酮、2-羥基甲基苯基丙烷等光
自由基聚合起始劑。該等光聚合起始劑可單獨使用,亦可併用2種以上。
作為上述熱聚合起始劑,可列舉因熱發生分解而產生使聚合硬化開始之活性自由基者,例如可列舉:過氧化二異丙苯、過氧化二第三丁基、第三丁基過氧化苯甲酸酯、氫過氧化第三丁基、過氧化苯甲醯、氫過氧化異丙苯、氫過氧化二異丙基苯、氫過氧化對薄荷烷、過氧化二第三丁基等。
但,為了使本發明之接著劑組成物發揮較高之耐熱性,上述熱聚合起始劑較佳為使用熱分解溫度為200℃以上之熱聚合起始劑。此種熱分解溫度較高之熱聚合起始劑可列舉氫過氧化異丙苯、氫過氧化對薄荷烷、過氧化二第三丁基等。
作為該等熱聚合起始劑中之市售者,並無特別限定,例如較佳為PERBUTYL D、PERBUTYL H、PERBUTYL P、PERMENTA H(以上均為日油公司製造)等。該等熱聚合起始劑可單獨使用,亦可併用2種以上。
上述光硬化型接著劑或熱硬化型接著劑較佳為進而含有自由基聚合性之多官能低聚物或單體。藉由含有自由基聚合性之多官能低聚物或單體,光硬化性、熱硬化性提高。
上述多官能低聚物或單體較佳為分子量為1萬以下者,更佳為其分子量為5000以下且分子內之自由基聚合性之不飽和鍵數為2~20個者,以使由加熱或光之照射引起之黏著劑層之三維網狀化效率較佳地進行。
上述多官能低聚物或單體例如可列舉:三羥甲基丙烷三丙烯酸酯、四羥甲基甲烷四丙烯酸酯、新戊四醇三丙烯酸酯、新戊四醇四丙烯酸酯、二新戊四醇單羥基五丙烯酸酯、二新戊四醇六丙烯酸酯或上述同樣之甲基丙烯酸酯類等。此外,可列舉1,4-丁二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、聚丙二醇#700二丙烯酸酯、聚乙二醇二丙烯酸酯、市售之寡酯丙烯酸酯、與上述相同之甲基丙烯酸酯類等。該等多官能低聚物或單體
可單獨使用,亦可併用2種以上。
上述氣體產生劑並無特別限定,例如可使用偶氮化合物、疊氮化合物等先前公知之氣體產生劑。
又,於對晶圓實施化學液處理、加熱處理或伴有發熱之處理之情形時,較佳為使用即便藉由該等處理亦不剝離、即對於該等處理之耐受性優異之氣體產生劑。作為此種氣體產生劑,例如較佳為下述通式(1)表示之羧酸化合物或其鹽。此種氣體產生劑藉由照射紫外線等光而產生氣體(二氧化碳氣體),另一方面,具有即便於200℃左右之高溫化下亦不分解之高耐熱性。又,對於酸、鹼、有機溶劑等化學液之耐受性亦優異。此種氣體產生劑即便於過於嚴酷之晶圓處理步驟中亦不會有反應而產生氣體之情形。
式(1)中,R1~R7分別表示氫或有機基。R1~R7可相同亦可不同。亦可R1~R7中之2者相互鍵結而形成環狀結構。
上述通式(1)中之有機基例如可列舉:甲基、乙基、丙基、丁基、異丁基等烷基;甲氧基、乙氧基等烷氧基;羧基;羥基;硝基;苯基等芳香族基;萘基、茀基、芘基等多環式烴基;聯苯基等環集合烴基;或基等雜環基等。
其中,較佳為,上述通式(1)中之R3~R7中之1者為下述通式(2)表示之有機基,或上述通式(1)中之R3~R7中之相鄰之2者相互鍵結而形成下述式(3)表示之環狀結構。
式(2)中,R8~R12分別表示氫或有機基。R8~R12可相同亦可不同。亦可R8~R12中之2者相互鍵結而形成環狀結構。
式(3)中,R13~R16分別表示氫或有機基。R13~R16可相同亦可不同。亦可R13~R16中之2者相互鍵結而形成環狀結構。
又,上述通式(1)中之R1較佳為甲基。
作為上述式(1)表示之羧酸化合物之具體例,例如可列舉:苯乙酸、二苯乙酸、三苯乙酸、2-苯丙酸、2,2-二苯丙酸、2,2,2-三苯丙酸、2-苯丁酸、α-甲氧基苯乙酸、杏仁酸、阿卓乳酸、二苯羥乙酸、顛茄醇酸、苯基丙二酸、苯基丁二酸、3-甲基-2-苯基丁酸、原甲苯甲醯基乙酸、甲基甲苯甲醯基乙酸、4-異丁基-α-甲基苯乙酸、對甲苯甲醯基乙酸、1,2-伸苯基二乙酸、1,3-伸苯基二乙酸、1,4-伸苯基二乙酸、2-甲氧基苯乙酸、2-羥基苯乙酸、2-硝基苯乙酸、3-硝基苯乙酸、4-硝
基苯乙酸、2-(4-硝基苯基)丙酸、3-(4-硝基苯基)丙酸、4-(4-硝基苯基)丙酸、3,4-二甲氧基苯乙酸、3,4-(亞甲基二氧基)苯乙酸、2,5-二甲氧基苯乙酸、3,5-二甲氧基苯乙酸、3,4,5-三甲氧基苯乙酸、2,4-二硝基苯乙酸、4-聯苯乙酸、1-萘乙酸、2-萘乙酸、6-甲氧基-α-甲基-2-萘乙酸、1-芘乙酸、9-茀羧酸或9H--9-羧酸等。
其中,上述式(1)表示之羧酸化合物較佳為下述式(1-1)表示之酮洛芬或下述式(1-2)表示之2-酮乙酸。
上述式(1)表示之羧酸化合物之鹽亦具有源自上述式(1)表示之羧酸化合物之骨架,因此若照射光則容易引起脫羧,可產生二氧化碳氣體。
上述式(1)表示之羧酸化合物之鹽係可僅將上述式(1)表示之羧酸化合物與鹼性化合物於容器中進行混合,不經由複雜之合成路徑而簡單地製備。
上述鹼性化合物並無特別限定,例如可列舉胺、肼化合物、氫氧化四
級銨鹽、膦化合物等。
上述胺並無特別限定,可使用一級胺、二級胺及三級胺中之任一者。
其中,上述鹼性化合物較佳為單烷基胺或二烷基胺。於使用單烷基胺或二烷基胺之情形時,可使所獲得之上述式(1)表示之羧酸化合物之鹽之極性低極性化,可提高與接著劑成分之溶解性。更佳為碳數6~12之單烷基胺或二烷基胺。
又,上述氣體產生劑亦較佳為下述通式(4)、通式(5)或通式(6)表示之四唑化合物或其鹽。該等氣體產生劑亦藉由照射紫外線等光而產生氣體(氮氣),另一方面,具有即便於200℃左右之高溫化下亦不分解之高耐熱性。又,對於酸、鹼、有機溶劑等化學液之耐受性亦優異。該等氣體產生劑即便於下述之過於嚴酷之晶圓處理步驟中亦不會有發生反應而產生氣體之情形。
式(4)~(6)中,R21、R22表示氫、碳數為1~7之烷基、伸烷基、苯基、巰基、羥基或胺基。
上述通式(4)~(6)表示之四唑化合物之鹽亦具有源自上述通式(4)~(6)表示之四唑化合物之骨架,因此若照射光則可產生氮氣。
上述通式(4)~(6)表示之四唑化合物之鹽並無特別限定,例如可列舉鈉鹽、鉀鹽、銨鹽等。
上述通式(4)~(6)表示之四唑化合物之鹽係可僅將上述通式(4)~(6)表示之四唑化合物與鹼性化合物於容器中進行混合,不
經由複雜之合成路徑而簡單地製備。
上述鹼性化合物並無特別限定,例如可列舉胺、肼化合物、氫氧化四級銨鹽、膦化合物等。
上述胺並無特別限定,可使用一級胺、二級胺及三級胺中之任一者。
其中,上述鹼性化合物較佳為單烷基胺或二烷基胺。於使用單烷基胺或二烷基胺之情形時,可使所獲得之上述通式(4)~(6)表示之四唑化合物之鹽之極性低極性化,可提高與接著劑成分之溶解性。更佳為碳數6~12之單烷基胺或二烷基胺。
上述通式(4)表示之四唑化合物或其鹽並無特別限定,具體而言,例如可列舉:1H-四唑、5-苯基-1H-四唑、5,5-偶氮雙-1H-四唑、5-胺基-1H-四唑、5-甲基-1H-四唑、1-甲基-5-巰基-1H-四唑、1-甲基-5-乙基-1H-四唑、1-(二甲基胺基乙基)-5-巰基-1H-四唑等。
上述通式(5)表示之四唑化合物或其鹽並無特別限定,具體而言,例如可列舉5,5'-雙四唑二銨鹽等。
上述通式(6)表示之四唑化合物或其鹽並無特別限定,具體而言,例如可列舉5,5'-雙四唑胺單銨鹽等。
上述氣體產生劑之含量係相對於上述接著劑成分100重量份之較佳下限為5重量份,較佳上限為50重量份。若上述氣體產生劑之含量未達5重量份,則存在由紫外線照射引起之氣體之產生較少而無法進行充分剝離之情況,若超過50重量份,則存在無法完全溶於接著劑成分而接著力降低之情況。上述氣體產生劑之含量之更佳下限為10重量份,更佳上限為30重量份。
上述接著劑組成物亦可含有光增感劑。
上述光增感劑具有放大由光產生之對上述氣體產生劑之刺激的效果,
因此可藉由更少之光照射而使氣體釋出。又,可藉由更寬之波長區域之光而使氣體釋出。
上述光增感劑只要為耐熱性優異者,則無特別限定。
耐熱性優異之光增感劑例如可列舉具有至少1個以上烷氧基之多環芳香族化合物。其中,較佳為具有一部分經縮水甘油基或羥基取代之烷氧基之取代烷氧基多環芳香族化合物。該等光增感劑之耐昇華性較高,可於高溫下使用。又,藉由烷氧基之一部分經縮水甘油基或羥基取代,而於上述接著劑成分中之溶解性提高,可防止滲出。
上述多環芳香族化合物較佳為蒽衍生物。上述烷氧基較佳為碳數1~18者,更佳為碳數1~8者。
上述具有至少1個以上烷氧基之多環芳香族化合物例如可列舉:9,10-二甲氧基蒽、2-乙基-9,10-二甲氧基蒽、2-第三丁基-9,10-二甲氧基蒽、2,3-二甲基-9,10-二甲氧基蒽、9-甲氧基-10-甲基蒽、9,10-二乙氧基蒽、2-乙基-9,10-二乙氧基蒽、2-第三丁基-9,10-二乙氧基蒽、2,3-二甲基-9,10-二乙氧基蒽、9-乙氧基-10-甲基蒽、9,10-二丙氧基蒽、2-乙基-9,10-二丙氧基蒽、2-第三丁基-9,10-二丙氧基蒽、2,3-二甲基-9,10-二丙氧基蒽、9-異丙氧基-10-甲基蒽、9,10-二丁氧基蒽、9,10-二苄氧基蒽、2-乙基-9,10-二苄氧基蒽、2-第三丁基-9,10-二苄氧基蒽、2,3-二甲基-9,10-二苄氧基蒽、9-苄氧基-10-甲基蒽、9,10-二-α-甲基苄氧基蒽、2-乙基-9,10-二-α-甲基苄氧基蒽、2-第三丁基-9,10-二-α-甲基苄氧基蒽、2,3-二甲基-9,10-二-α-甲基苄氧基蒽、9-(α-甲基苄氧基)-10-甲基蒽、9,10-二(2-羥基乙氧基)蒽、2-乙基-9,10-二(2-羧基乙氧基)蒽等蒽衍生物等。
上述具有一部分經縮水甘油基或羥基取代之烷氧基之取代烷氧基多環芳香族化合物例如可列舉:9,10-二(縮水甘油氧基)蒽、2-乙基
-9,10-二(縮水甘油氧基)蒽、2-第三丁基-9,10-二(縮水甘油氧基)蒽、2,3-二甲基-9,10-二(縮水甘油氧基)蒽、9-(縮水甘油氧基)-10-甲基蒽、9,10-二(2-乙烯氧基乙氧基)蒽、2-乙基-9,10-二(2-乙烯氧基乙氧基)蒽、2-第三丁基-9,10-二(2-乙烯氧基乙氧基)蒽、2,3-二甲基-9,10-二(2-乙烯氧基乙氧基)蒽、9-(2-乙烯氧基乙氧基)-10-甲基蒽、9,10-二(3-甲基-3-氧雜環丁基甲氧基)蒽、2-乙基-9,10-二(3-甲基-3-氧雜環丁基甲氧基)蒽、2-第三丁基-9,10-二(3-甲基-3-氧雜環丁基甲氧基)蒽、2,3-二甲基-9,10-二(3-甲基-3-氧雜環丁基甲氧基)蒽、9-(3-甲基-3-氧雜環丁基甲氧基)-10-甲基蒽、9,10-二(對環氧基苯基甲氧基)蒽、2-乙基-9,10-二(對環氧基苯基甲氧基)蒽、2-第三丁基-9,10-二(對環氧基苯基甲氧基)蒽、2,3-二甲基-9,10-二(對環氧基苯基甲氧基)蒽、9-(對環氧基苯基甲氧基)-10-甲基蒽、9,10-二(對乙烯基苯基甲氧基)蒽、2-乙基-9,10-二(對乙烯基苯基甲氧基)蒽、2-第三丁基-9,10-二(對乙烯基苯基甲氧基)蒽、2,3-二甲基-9,10-二(對乙烯基苯基甲氧基)蒽、9-(對乙烯基苯基甲氧基)-10-甲基蒽、9,10-二(2-羥基乙氧基)蒽、9,10-二(2-羥基丙氧基)蒽、9,10-二(2-羥基丁氧基)蒽、9,10-二(2-羥基-3-丁氧基丙氧基)蒽、9,10-二(2-羥基-3-(2-乙基己氧基)丙氧基)蒽、9,10-二(2-羥基-3-烯丙氧基丙氧基)蒽、9,10-二(2-羥基-3-苯氧基丙氧基)蒽、9,10-二(2,3-二羥基丙氧基)蒽等。
上述光增感劑之含量係相對於上述接著劑成分100重量份之較佳下限為0.05重量份,較佳上限為10重量份。若上述光增感劑之含量未達0.05重量份,則存在無法獲得充分之增感效果之情況,若超過10重量份,則存在源自光增感劑之殘存物增加而無法進行充分剝離之情況。上述光增感劑之含量之更佳下限為0.1重量份,更佳上限為5重量份。
上述接著劑組成物係為了謀求作為黏著劑之凝聚力之調
節,亦可視需要而適當含有異氰酸酯化合物、三聚氰胺化合物、環氧化合物等一般之摻合於黏著劑中之各種多官能性化合物。
上述接著劑組成物亦可含有塑化劑、樹脂、界面活性劑、蠟、微粒子填充劑等公知之添加劑。
又,接著劑組成物亦為本發明之一,其用於本發明之晶圓之處理方法,且含有接著劑成分及藉由照射紫外線而產生氣體之氣體產生劑。
於上述支撐板固定步驟中,晶圓與支撐板之接著可藉由上述接著劑組成物而直接接著,亦可使用至少一面具有由上述接著劑組成物構成之接著劑層之雙面黏著帶而接著。
上述雙面黏著帶可為於基材之兩面具有黏著劑層之支撐帶,亦可為不具有基材之無支撐帶。
於上述雙面黏著帶為支撐帶之情形時,上述基材例如可列舉由丙烯酸、烯烴、聚碳酸酯、氯乙烯、ABS、聚對苯二甲酸乙二酯(PET)、尼龍、胺甲酸乙酯、聚醯亞胺等透明樹脂構成之片材、具有網狀結構之片材、開孔之片材等。
本發明之晶圓之處理方法中,繼而進行對固定於上述支撐板之晶圓實施處理之晶圓處理步驟。
作為對上述晶圓之處理,例如可列舉將晶圓研削至一定厚度之研磨處理等。又,近年來,亦可實施化學液處理、加熱處理或伴有發熱之處理。
作為上述化學液處理,例如可列舉:電鍍、非電鍍等鍍敷處理;利用氟酸、氫氧化四甲基銨水溶液(TMAH)等進行之濕式蝕刻處理;利用N-甲基-2-吡咯啶酮、單乙醇胺、DMSO等進行之抗蝕劑剝離製程;利用濃硫酸、氨水、過氧化氫水等進行之清洗製程等。
作為上述加熱處理或伴有發熱之處理,例如可列舉:濺鍍、蒸鍍、蝕刻、化學氣相成長法(CVD)、物理氣相成長法(PVD)、抗蝕劑塗佈/圖案
化、回焊等。
本發明之晶圓之處理步驟亦可於下述支撐板剝離步驟之前,具有將切晶帶貼附於上述處理後之晶圓之處理面的切晶帶貼附步驟。藉由預先貼附切晶帶,支撐板剝離步驟中可於剝離支撐板後快速地進入至切晶步驟。
本發明之晶圓之處理方法中,繼而進行支撐板剝離步驟:對上述處理後之晶圓照射紫外線而使氣體產生劑產生氣體,從而將支撐板自晶圓剝離。接著上述晶圓與支撐板之接著劑組成物含有氣體產生劑,故而藉由照射紫外線,可不使晶圓破損而容易地將晶圓自支撐板剝離。
於上述支撐板剝離步驟中,使用照射強度100mW/cm2以上之點狀或線狀之紫外線以掃描晶圓之整個面之方式進行照射。藉此,明顯縮短自開始紫外線之照射至可將晶圓與支撐板剝離為止之時間,藉此可改善整體之生產效率。若紫外線之照射強度未達100mW/cm2,則存在未產生足夠量之氣體而剝離壓力降低、無法剝離之情況。使用較佳為照射強度200mW/cm2以上、更佳為照射強度300mW/cm2以上之點狀或線狀之紫外線以掃描晶圓之整個面之方式進行照射。
上述指示板剝離步驟中之點狀或線狀之紫外線之照射強度的較佳上限為2000mW/cm2。若紫外線之照射強度超過2000mW/cm2,則存在發熱量增大而上述接著劑組成物燒焦之情況。紫外線之照射強度之更佳上限為1750mW/cm2,進而較佳之上限為1600mW/cm2。
於上述支撐板剝離步驟中,使用照射強度100mW/cm2以上之點狀或線狀之紫外線以掃描晶圓之整個面之方式進行照射時,掃描速度之較佳下限為1mm/sec,較佳上限為200mm/sec。若上述掃描速度未達1mm/sec,則存在上述接著劑組成物被來自紫外線光源之熱燒焦之情況,若超過200mm/sec,則存在來自上述接著劑組成物之氣體之產生不充
分之情況。上述掃描速度之更佳下限為3mm/sec以上,更佳上限為150mm/sec,進而較佳之上限為100mm/sec。
使用圖1對使用上述照射強度100mW/cm2以上之點狀之紫外線以掃描晶圓之整個面之方式進行照射的具體方法之一例進行說明。
於圖1中,處理後之晶圓1經由接著劑組成物2而固定於支撐板3。於此種狀態下,自支撐板3側,自紫外線照射口4照射照射強度100mW/cm2以上之點狀之紫外線(圖1(a))。紫外線係以點狀照射,故而未照射至晶圓之整個面,但藉由一面照射一面前後左右移動紫外線照射口4,可以掃描晶圓整個面之方式進行照射(圖1(b))。
再者,圖1中係移動紫外線照射口4而進行掃描,但使處理後之晶圓1/接著劑組成物2/支撐板3之積層體側移動亦可獲得相同之效果。
將表示使用點狀之紫外線以掃描晶圓之整個面之方式照射紫外線之情形的掃描圖案之一例之示意圖示於圖2。
圖2(a)係以紫外線照射之軌跡自晶圓之外周部朝向中心部成為螺旋狀之方式照射點狀紫外線的掃描圖案。
圖2(b)係以紫外線照射之軌跡往返於晶圓之整個面之方式照射點狀紫外線的掃描圖案。
圖2(c)係以紫外線照射之軌跡往返於晶圓之一半面後往返於另一半面之方式照射點狀紫外線的掃描圖案。
圖2(d)係以紫外線照射之軌跡往返於晶圓之外周部與中心部並且覆蓋晶圓整個面之方式照射點狀紫外線的掃描圖案。
使用圖3對使用上述照射強度100mW/cm2以上之線狀紫外線以掃描晶圓整個面之方式進行照射的具體方法之一例進行說明。
於圖3中,處理後之晶圓1經由接著劑組成物2而固定於支撐板3。於此種狀態下,自支撐板3側,自紫外線照射口5照射照射強度100mW/cm2
以上之線狀紫外線(圖3(a))。紫外線係以線狀照射,故而未照射至晶圓之整個面,但藉由一面照射一面左右移動紫外線照射口5,可以掃描晶圓之整個面之方式進行照射(圖3(b))。
再者,於圖3中移動紫外線照射口5而進行掃描,但將處理後之晶圓1/接著劑組成物2/支撐板3之積層體側置於例如帶式輸送機等而移動亦可獲得相同之效果。
例如,如圖2(a)~(d)所記載,點狀或線狀之紫外線之照射較佳為自晶圓之外周部開始。藉此,可更確實地進行支撐板之剝離。
再者,進行點狀之紫外線之照射時,掃描方向並無特別限定,可為順時針方向,亦可為逆時針方向。又,進行線狀之紫外線之照射時,掃描方向並無特別限定,可自右起,亦可自左起。
作為可照射上述照射強度100mW/cm2以上之點狀或線狀之紫外線的紫外線照射裝置,並無特別限定,例如可使用市售之高壓水銀燈、中壓水銀燈、低壓水銀燈、金屬鹵化物燈、LED燈、光點UV裝置、脈衝雷射UV照射裝置、輸送機式UV燈、掃描式UV燈等。
具體而言,例如可使用USHIO電機股份有限公司製造之「SPOTCURE」或EYE GRAPHICS公司製造之「EYE GRANTAGE」等市售之紫外線照射裝置。
根據本發明之晶圓之處理方法,可控制產生氣體之部位,不使所產生之氣體停留於支撐板與接著劑組成物之間,且明顯縮短自開始紫外線之照射至可將晶圓與支撐板剝離之時間,藉此可改善整體之生產效率。
又,藉由本發明之晶圓之處理方法進行處理之晶圓亦為本發明之一。
根據本發明,可提供一種晶圓之處理方法,其係於經由接著劑組成物將晶圓固定於支撐板之狀態下對晶圓進行處理者,且實現更高之生產效率。
1‧‧‧處理後之晶圓
2‧‧‧接著劑組成物
3‧‧‧支撐板
4‧‧‧紫外線照射口
5‧‧‧紫外線照射口
圖1係對使用照射強度100mW/cm2以上之點狀紫外線以掃描晶圓之整個面之方式進行照射的方法之一例進行說明之示意圖。
圖2係表示使用點狀紫外線以掃描晶圓之整個面之方式照射紫外線之情形的掃描圖案之一例之示意圖。
圖3係對使用照射強度100mW/cm2以上之線狀紫外線以掃描晶圓之整個面之方式進行照射的方法之一例進行說明之示意圖。
以下,列舉實施例進而詳細地說明本發明之態樣,但本發明並不僅限於該等實施例。
(實施例1)
(1)黏著帶之製備
準備具備溫度計、攪拌機、冷卻管之反應器,於該反應器內添加丙烯酸2-乙基己酯94重量份、丙烯酸1重量份、丙烯酸2-羥基乙酯5重量份、月桂硫醇0.01重量份、及乙酸乙酯180重量份後,加熱反應器開始回流。繼而,於上述反應器內添加作為聚合起始劑之1,1-雙(過氧化第三己基)-3,3,5-三甲基環己烷0.01重量份,於回流下開始聚合。其次,距聚合開始1小時後及2小時後,分別添加1,1-雙(過氧化第三己基)-3,3,5-三甲基環己烷0.01重量份,進而,距聚合開始4小時後添加過氧化新戊酸第三己酯0.05重量份而使聚合反應繼續。繼而,距聚合開始8小時後,獲得固形物成分55重量%、重量平均分子量60萬之丙烯酸共聚物。
相對於包含所獲得之丙烯酸共聚物之乙酸乙酯溶液之樹脂固形物成分100重量份,添加甲基丙烯酸2-異氰酸酯基乙基酯3.5重量份而進行反應,
進而,相對於反應後之乙酸乙酯溶液之樹脂固形物成分100重量份,混合光聚合起始劑(Esacure One,NIHON SIBER HEGNER公司製造)0.1重量份、聚異氰酸酯系交聯劑(Coronate L45,Nippon Polyurethane公司製造)2.5重量份,製備接著劑(1)之乙酸乙酯溶液。
相對於接著劑(1)之乙酸乙酯溶液之樹脂固形物成分100重量份,混合作為氣體產生劑之雙四唑Na鹽(增田化學公司製造)20重量份、作為光增感劑之9,10-二縮水甘油氧基蒽1重量份,而獲得接著劑組成物。
於單面實施有電暈處理之厚度50μm之透明聚對苯二甲酸乙二酯膜之電暈處理面上,以乾燥皮膜之厚度成為30μm之方式利用刮刀塗敷所獲得之接著劑組成物,以110℃加熱5分鐘而使塗敷溶液乾燥。其後,以40℃靜置固化3天,獲得接著帶。
(2)晶圓之處理
將所獲得之黏著帶切割為直徑20cm之圓形,於真空中貼附於直徑20cm、厚度約750μm之矽晶圓。於與貼附於矽晶圓之面相反之面,於真空中貼附直徑20cm、厚度1mm之石英玻璃板,獲得積層體。
對所獲得之積層體之晶圓側進行粉碎研削及研磨,研削至厚度為50μm。
對所獲得之積層體,自玻璃板側使用輸送機式UV照射機(EYE GRAPHICS公司製造之「EYE GRANTAGE」),一面左右移動紫外線照射口,一面將照射強度300mW/cm2之線狀紫外線以掃描晶圓之整個面之方式照射254nm之紫外線。再者,紫外線照射口之移動係以掃描圖案成為圖3之方式進行,自紫外線之照射開始至晶圓整個面之掃描完成為止之時間設為30秒(掃描速度:6.5mm/sec)。其後,自玻璃板側以目視進行觀察,確認到充分產生氣體後,將玻璃板與晶圓剝離。
自上述紫外線之照射至玻璃板與晶圓之剝離需要2分鐘。
(實施例2)
將藉由與實施例1相同之方法獲得之黏著帶切割為直徑20cm之圓形,於真空中貼附於直徑20cm、厚度約750μm之矽晶圓。於與貼附於矽晶圓之面相反之面,於真空中貼附直徑20cm、厚度1mm之石英玻璃板,獲得積層體。
自玻璃板側使用輸送機式UV照射機(EYE GRAPHICS公司製造之「EYE GRANTAGE」),一面左右移動紫外線照射口,一面將照射強度100mW/cm2之線狀紫外線以掃描晶圓之整個面之方式照射254nm之紫外線,除此以外,利用與實施例1相同之方法進行晶圓之處理。其後,自玻璃板側以目視進行觀察,確認到充分產生氣體後,將玻璃板與晶圓剝離。
自上述紫外線之照射至玻璃板與晶圓之剝離需要4分30秒鐘。
(實施例3)
將藉由與實施例1相同之方法獲得之黏著帶切割為直徑20cm之圓形,於真空中貼附於直徑20cm、厚度約750μm之矽晶圓。於與貼附於矽晶圓之面相反之面,於真空中貼附直徑20cm、厚度1mm之石英玻璃板,獲得積層體。
對所獲得之積層體之晶圓側進行粉碎研削及研磨,研削至厚度為50μm。
對所獲得之積層體,自玻璃板側使用光點UV(USHIO電機公司製造之「SPOTCURE」),一面前後左右移動紫外線照射口,一面將紫外線以照射強度500mW/cm2之2cm×2cm之面積以掃描晶圓之整個面之方式照射254nm之紫外線。再者,紫外線照射口之移動係以成為如圖2(a)般之方式進行,自紫外線之照射開始至晶圓整個面之掃描完成為止之時間設為180秒(掃描速度:11mm/sec)。其後,自玻璃板側以目視進行觀察,確認到充分產
生氣體後,將玻璃板與晶圓剝離。
自上述紫外線之照射至玻璃板與晶圓之剝離需要4分鐘。
(實施例4)
將藉由與實施例1相同之方法獲得之黏著帶切割為直徑20cm之圓形,於真空中貼附於直徑20cm、厚度約750μm之矽晶圓。於與貼附於矽晶圓之面相反之面,於真空中貼附直徑20cm、厚度1mm之石英玻璃板,獲得積層體。
對所獲得之積層體之晶圓側進行粉碎研削及研磨,研削至厚度為50μm。
對所獲得之積層體,自玻璃板側使用光點UV(USHIO電機公司製造之「SPOTCURE」),一面前後左右移動紫外線照射口,一面以將紫外線以照射強度500mW/cm2之2cm×2cm之面積以掃描晶圓之整個面之方式照射254nm之紫外線。再者,紫外線照射口之移動係以成為如圖2(b)般之方式進行,自紫外線之照射開始至晶圓整個面之掃描完成為止之時間設為180秒(掃描速度:11mm/sec)。其後,自玻璃板側以目視進行觀察,確認到充分產生氣體後,將玻璃板與晶圓剝離。
自上述紫外線之照射至玻璃板與晶圓之剝離需要4分鐘。
(實施例5)
將藉由與實施例1相同之方法獲得之黏著帶切割為直徑20cm之圓形,於真空中貼附於直徑20cm、厚度約750μm之矽晶圓。於與貼附於矽晶圓之面相反之面,於真空中貼附直徑20cm、厚度1mm之石英玻璃板,獲得積層體。
對所獲得之積層體之晶圓側進行粉碎研削及研磨,研削至厚度為50μm。
對所獲得之積層體,自玻璃板側使用光點UV(USHIO電機公司製造之
「SPOTCURE」),一面前後左右移動紫外線照射口,一面將紫外線以照射強度500mW/cm2之2cm×2cm之面積以掃描晶圓之整個面之方式照射254nm之紫外線。再者,紫外線照射口之移動係以成為如圖2(c)般之方式進行,自紫外線之照射開始至晶圓整個面之掃描完成為止之時間設為200秒(掃描速度:10mm/sec)。其後,自玻璃板側以目視進行觀察,確認到充分產生氣體後,將玻璃板與晶圓剝離。
自上述紫外線之照射至玻璃板與晶圓之剝離需要4分鐘。
(實施例6)
將藉由與實施例1相同之方法獲得之黏著帶切割為直徑20cm之圓形,於真空中貼附於直徑20cm、厚度約750μm之矽晶圓。於與貼附於矽晶圓之面相反之面,於真空中貼附直徑20cm、厚度1mm之石英玻璃板,獲得積層體。
對所獲得之積層體之晶圓側進行粉碎研削及研磨,研削至厚度為50μm。
對所獲得之積層體,自玻璃板側使用光點UV(USHIO電機公司製造之「SPOTCURE」),一面前後左右移動紫外線照射口,一面將紫外線以照射強度500mW/cm2之2cm×2cm之面積以掃描晶圓之整個面之方式照射254nm之紫外線。再者,紫外線照射口之移動係以成為如圖2(d)般之方式進行,自紫外線之照射開始至晶圓整個面之掃描完成為止之時間設為200秒(掃描速度:10mm/sec)。其後,自玻璃板側以目視進行觀察,確認到充分產生氣體後,將玻璃板與晶圓剝離。
自上述紫外線之照射至玻璃板與晶圓之剝離需要4分鐘。
(比較例1)
將藉由與實施例1相同之方法獲得之黏著帶切割為直徑20cm之圓形,於真空中貼附於直徑20cm、厚度約750μm之矽晶圓。於與貼附於矽晶圓
之面相反之面,於真空中貼附直徑20cm、厚度1mm之石英玻璃板,獲得積層體。
對所獲得之積層體之晶圓側進行粉碎研削及研磨,研削至厚度為50μm。
對所獲得之積層體之整個面,自玻璃板側使用超高壓水銀燈,將254nm之紫外線以向玻璃板表面之照射強度成為80mW/cm2之方式調節照射強度並照射6分鐘。
其後,自玻璃板側以目視進行觀察,確認到充分產生氣體後,將玻璃板與晶圓剝離。
自上述紫外線之照射至玻璃板與晶圓之剝離需要10分鐘。所產生之氣體停留於玻璃板與接著帶之間,晶圓側之一部分剝離,因此將玻璃板自晶圓剝離耗費時間。
[產業上之可利用性]
根據本發明,可提供一種晶圓之處理方法,其係於經由接著劑組成物將晶圓固定於支撐板之狀態下對晶圓進行處理者,且實現更高之生產效率。
Claims (11)
- 一種晶圓之處理方法,具有下述步驟:支撐板固定步驟,經由接著劑組成物將晶圓固定於支撐板,其中,該接著劑組成物含有接著劑成分及藉由照射紫外線而產生氣體之氣體產生劑;晶圓處理步驟,對固定於該支撐板之晶圓實施處理;及支撐板剝離步驟,對該處理後之晶圓照射紫外線使該氣體產生劑產生氣體,從而將支撐板自晶圓剝離;其特徵在於:於該支撐板剝離步驟中,使用照射強度100mW/cm2以上之點狀或線狀紫外線,以掃描晶圓整個面的方式進行照射。
- 如申請專利範圍第1項之晶圓之處理方法,其中,於支撐板剝離步驟中,以使紫外線照射軌跡自晶圓外周部朝向中心部成為螺旋狀的方式,照射點狀紫外線。
- 如申請專利範圍第1項之晶圓之處理方法,其中,於支撐板剝離步驟中,以使紫外線照射軌跡往返於晶圓整個面的方式,照射點狀紫外線。
- 如申請專利範圍第1項之晶圓之處理方法,其中,於支撐板剝離步驟中,以使紫外線照射軌跡往返於晶圓之一半面後再往返於另一半面的方式,照射點狀紫外線。
- 如申請專利範圍第1項之晶圓之處理方法,其中,於支撐板剝離步驟中,以使紫外線照射軌跡一邊往返於晶圓之外周部與中心部一邊覆蓋晶圓整個面的方式,照射點狀紫外線。
- 如申請專利範圍第1項之晶圓之處理方法,其中,於支撐板剝離步驟中,一邊左右移動晶圓或紫外線照射口,一邊照射線狀紫外線。
- 如申請專利範圍第1項之晶圓之處理方法,其中,於支撐板剝離步驟中,點狀或線狀之紫外線照射係自晶圓外周部開始。
- 如申請專利範圍第1項之晶圓之處理方法,其中,於支撐板剝離步驟 中照射之點狀或線狀紫外線的照射強度為2000mW/cm2以下。
- 如申請專利範圍第1項之晶圓之處理方法,其中,於支撐板剝離步驟中使用照射強度100mW/cm2以上之點狀或線狀紫外線以掃描晶圓整個面的方式進行照射時,掃描速度為1~200mm/sec。
- 一種晶圓,其經申請專利範圍第1、2、3、4、5、6、7、8或9中任一項之晶圓之處理方法進行處理。
- 一種接著劑組成物,用於申請專利範圍第1、2、3、4、5、6、7、8或9中任一項之晶圓之處理方法,其含有接著劑成分及藉由照射紫外線而產生氣體之氣體產生劑。
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