CN104538713A - Micro-strip elliptic function band rejection filter - Google Patents
Micro-strip elliptic function band rejection filter Download PDFInfo
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- CN104538713A CN104538713A CN201410741367.9A CN201410741367A CN104538713A CN 104538713 A CN104538713 A CN 104538713A CN 201410741367 A CN201410741367 A CN 201410741367A CN 104538713 A CN104538713 A CN 104538713A
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Abstract
The invention relates to a micro-strip elliptic function band rejection filter which comprises an input SWA connector, an output SWA connector and a micro-strip elliptic function band rejection filter circuit. The micro-strip elliptic function band rejection filter circuit comprises a micro-strip main line, single-mode resonators and double-mode resonators, wherein the single-mode resonators and the double-mode resonators are arranged along the micro-strip main line at intervals. The single-mode resonators and the double-mode resonators are connected with the micro-strip main line in a coupled mode. The center frequency of the single-mode resonators is the same as that of the double-mode resonators, the interval, between the single-mode resonators and the double-mode resonators, of the micro-strip main line is 1/4 wavelength. The double-mode resonators are each composed of two resonance units which are coupled to each other, wherein both the two resonance units are single-mode resonators of 1/2 wavelength, and the resonance frequency of the two resonance units are located at the two sides of the center frequency respectively. By means of the technical scheme, the micro-strip elliptic function band rejection filter has the elliptic function transmission feature and has the advantages of being deep in notch suppression, high in rectangle coefficient, low in passband insertion loss and the like.
Description
Technical field
The present invention relates to microwave device technology field, be specifically related to a kind of micro-band elliptic function band stop filter.
Background technology
Compare with chebyshev function filter, the fertile hereby function filter of Bart, the elliptic function filter of identical exponent number can realize more precipitous cut-off.But due to the prototype circuit more complicated of elliptic function filter, it is more that corresponding microwave filter is used for the transmission line such as strip line, waveguide form, and it is still few to be applied to microstrip line form.Conventional design method is based on chebyshev function, the theoretical formula of accurate calculating, the filter designed only can realize puppet/quasi-elliptic function transmission curve, under same filter exponent number, there is the deficiencies such as notch depth is little, squareness factor is low, pass band insertion loss is large.
Summary of the invention
The object of the present invention is to provide a kind of micro-band elliptic function band stop filter, this band stop filter has elliptic function transmission characteristic, has the features such as trap suppresses deeply, squareness factor is high, pass band insertion loss is little.
For achieving the above object, present invention employs following technical scheme:
A kind of micro-band elliptic function band stop filter, comprises input sub-miniature A connector, exports sub-miniature A connector and micro-band elliptic function rejector circuit.
Described micro-band elliptic function rejector circuit comprises micro-band main line and along the spaced singlemode resonance device of micro-band main line and dual-mode resonator.Singlemode resonance device and dual-mode resonator are arranged along the interval, side of micro-band main line, or arrange along the interval, both sides of micro-band main line.Described singlemode resonance device and dual-mode resonator are coupled with micro-band main line respectively.Described singlemode resonance device is identical with the centre frequency of dual-mode resonator, and the micro-band main line spacing between singlemode resonance device and adjacent dual-mode resonator is quarter-wave.
Described dual-mode resonator can produce bimodulus, is single dual-mode resonator.Or dual-mode resonator can produce bimodulus, the resonant element intercoupled by two forms side by side, and two resonant elements are the singlemode resonance device of 1/2nd wavelength, and the resonance frequency of two resonant elements lays respectively at the both sides of centre frequency.That is, the resonance frequency of a resonant element is greater than centre frequency, and the resonance frequency of another one resonant element is less than centre frequency.
Further, the outside of described micro-band elliptic function rejector circuit is provided with box body, micro-band elliptic function rejector circuit is welded on bottom box body by the indium sheet that 0.1mm is thick, and its input, output respectively with input sub-miniature A connector, export sub-miniature A connector and be weldingly connected.
Further, described micro-band elliptic function rejector circuit adopts magnesium oxide as substrate, the high-temperature superconductor YBa of 5000 dusts in the sputtering of substrate two sides
2cu
3o
7-Δ film, at high-temperature superconductor YBa
2cu
3o
7on-Δ film, in-situ sputtering has the golden film of 500 dusts, wherein the high-temperature superconductor YBa of one side
2cu
3o
7-Δ film and golden film all retain, and as ground plane, the input/output interface part on another side is golden film, and remainder is high-temperature superconductor YBa
2cu
3o
7-Δ film.
From above technical scheme, the present invention had both been provided with singlemode resonance device on micro-band main line, additionally use dual-mode resonator, this can produce the transmission zero identical with resonator number in the stopband of band stop filter, the passband of this band stop filter and stopband is made all to have the attenuation characteristic of fluctuating, namely frequency response characteristic is elliptic function, thus makes the transition between passband and stopband more precipitous.In sum, the present invention not only has elliptic function transmission characteristic, also has the features such as trap suppresses deeply, squareness factor is high, pass band insertion loss is little.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention's micro-band elliptic function band stop filter;
Fig. 2 is the structural representation of the present invention's micro-band elliptic function rejector circuit;
Fig. 3 is the equivalent circuit diagram of the present invention's micro-band elliptic function rejector circuit;
Fig. 4 is the transmission curve figure of dual-mode resonator of the present invention.
Wherein:
1, sub-miniature A connector is inputted, 2, export sub-miniature A connector, 3, box body, 4, micro-band elliptic function rejector circuit, 5, pad, 6, micro-band main line, 7, dual-mode resonator, 8, resonant element, 9, singlemode resonance device.
Embodiment
Below in conjunction with accompanying drawing, the present invention will be further described:
The micro-band elliptic function of one as shown in Figure 1 band stop filter, comprises input sub-miniature A connector 1, exports sub-miniature A connector 2, box body 3 and micro-band elliptic function rejector circuit 4.Described micro-band elliptic function rejector circuit 4 is arranged on the inside of box body 3, micro-band elliptic function rejector circuit 4 is welded on bottom box body 3 by the indium sheet that 0.1mm is thick, and its input, output respectively with input sub-miniature A connector 1, export sub-miniature A connector 2 and be weldingly connected.
Specifically, as shown in Figure 2, described micro-band elliptic function rejector circuit 4 comprises input/output pads 5, micro-band main line 6 and along the spaced singlemode resonance device 9 of micro-band main line 6 and dual-mode resonator 7.Described singlemode resonance device 9 is coupled with micro-band main line 6 respectively with dual-mode resonator 7.Described singlemode resonance device 9 is identical with the centre frequency of dual-mode resonator 7, and the micro-band main line spacing between singlemode resonance device 9 and adjacent dual-mode resonator 7 is quarter-wave.
Described dual-mode resonator 7 is made up of side by side two resonant elements intercoupled 8, and two resonant elements 8 are the singlemode resonance device of 1/2nd wavelength, and the resonance frequency of two resonant elements 8 lays respectively at the both sides of this band stop filter centre frequency.By adjusting the distance between the length of resonant element and two resonant elements, dual-mode resonator can be made at the centre frequency place resonance of this band stop filter.The transmission curve of this dual-mode resonator 7 as shown in Figure 4.Under dual-mode resonator structure, dual-mode resonator 7 creates the zero point (dotted line S21) in two bands.
Described micro-band elliptic function rejector circuit 4 adopts magnesium oxide as substrate, the high-temperature superconductor YBa of 5000 dusts in the sputtering of substrate two sides
2cu
3o
7-Δ film, at high-temperature superconductor YBa
2cu
3o
7on-Δ film, in-situ sputtering has the golden film of 500 dusts, wherein the high-temperature superconductor YBa of one side
2cu
3o
7-Δ film and golden film all retain, and as ground plane, the input/output interface part on another side is golden film, and remainder is high-temperature superconductor YBa
2cu
3o
7-Δ film.
Fig. 3 is the equivalent circuit diagram of micro-band elliptic function rejector circuit.Wherein, the inductance L 1 of mutual series connection respectively forms a singlemode resonance device with electric capacity C7, mutual inductance L 10 of connecting with electric capacity C10, the inductance L 13 of mutually connecting and electric capacity C13 with electric capacity C4, mutual inductance L 7 of connecting with electric capacity C1, mutual inductance L 4 of connecting, and each resonator is coupled with micro-band main line respectively.Inductance L 2 parallel with one another intercouples with C3 with C2 and inductance L 3 parallel with one another, forms a dual-mode resonator; Inductance L 5 parallel with one another intercouples with C6 with C5 and inductance L 6 parallel with one another, forms a dual-mode resonator; Inductance L 8 parallel with one another intercouples with C9 with C8 and inductance L 9 parallel with one another, forms a dual-mode resonator; Inductance L 11 parallel with one another intercouples with C12 with C11 and inductance L 12 parallel with one another, forms a dual-mode resonator; Each dual-mode resonator is coupled with micro-band main line respectively.
As can be seen from Figure 3, singlemode resonance device and dual-mode resonator interval are arranged, known by impedance transformation, and micro-band main line spacing is therebetween quarter-wave.
Operation principle of the present invention is:
By frequency translation and impedance transformation, lump function elliptic function band stop filter is converted to micro-band forms.Adopt Two-mode Coupling unit can produce multipair zero point in band, realize transmission elliptic function response model.
Above-described embodiment is only be described the preferred embodiment of the present invention; not scope of the present invention is limited; under not departing from the present invention and designing the prerequisite of spirit; the various distortion that those of ordinary skill in the art make technical scheme of the present invention and improvement, all should fall in protection range that claims of the present invention determines.
Claims (4)
1. a micro-band elliptic function band stop filter, is characterized in that: comprise input sub-miniature A connector (1), export sub-miniature A connector (2) and micro-band elliptic function rejector circuit (4);
Described micro-band elliptic function rejector circuit (4) comprises micro-band main line (6) and along the spaced singlemode resonance device (9) of micro-band main line (6) and dual-mode resonator (7); Described singlemode resonance device (9) and dual-mode resonator (7) are coupled with micro-band main line (6) respectively; Described singlemode resonance device (9) is identical with the centre frequency of dual-mode resonator (7), and the micro-band main line spacing between singlemode resonance device (9) and adjacent dual-mode resonator (7) is quarter-wave.
2. one according to claim 1 micro-band elliptic function band stop filter, it is characterized in that: described dual-mode resonator (7) is made up of side by side two resonant elements intercoupled (8), two resonant elements (8) are the singlemode resonance device of 1/2nd wavelength, and the resonance frequency of two resonant elements (8) lays respectively at the both sides of centre frequency.
3. one according to claim 1 micro-band elliptic function band stop filter, it is characterized in that: the outside of described micro-band elliptic function rejector circuit (4) is provided with box body (3), micro-band elliptic function rejector circuit (4) is welded on box body (3) bottom by the indium sheet that 0.1mm is thick, and its input, output respectively with input sub-miniature A connector (1), export sub-miniature A connector (2) and be weldingly connected.
4. one according to claim 1 micro-band elliptic function band stop filter, is characterized in that: described micro-band elliptic function rejector circuit (4) adopts magnesium oxide as substrate, the high-temperature superconductor YBa of 5000 dusts in the sputtering of substrate two sides
2cu
3o
7-Δ film, at high-temperature superconductor YBa
2cu
3o
7on-Δ film, in-situ sputtering has the golden film of 500 dusts, wherein the high-temperature superconductor YBa of one side
2cu
3o
7-Δ film and golden film all retain, and as ground plane, the input/output interface part on another side is golden film, and remainder is high-temperature superconductor YBa
2cu
3o
7-Δ film.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410741367.9A CN104538713B (en) | 2014-12-09 | 2014-12-09 | A kind of micro-strip elliptic function bandstop filter |
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| CN201410741367.9A CN104538713B (en) | 2014-12-09 | 2014-12-09 | A kind of micro-strip elliptic function bandstop filter |
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| CN104538713B CN104538713B (en) | 2017-06-06 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109244610A (en) * | 2018-09-13 | 2019-01-18 | 中国电子科技集团公司第十六研究所 | A kind of adjustable dual mode filter |
| CN111030639A (en) * | 2019-12-25 | 2020-04-17 | 天通瑞宏科技有限公司 | Elliptical surface acoustic wave filter |
| CN111180848A (en) * | 2020-02-19 | 2020-05-19 | 南京大学 | Device and method for realizing compact adjustable microwave resonator by NbN dynamic inductor |
Citations (5)
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|---|---|---|---|---|
| US5448210A (en) * | 1991-06-27 | 1995-09-05 | Dassault Electronique | Tunable microwave bandstop filter device |
| US20020158704A1 (en) * | 2001-03-21 | 2002-10-31 | Shen Ye | Device approximating a shunt capacitor for strip-line-type circuits |
| CN101320840A (en) * | 2008-06-24 | 2008-12-10 | 东南大学 | Multi-stop band ultra-wideband antenna based on miniaturization double module resonator |
| CN203071886U (en) * | 2012-12-28 | 2013-07-17 | 中国电子科技集团公司第十六研究所 | High-temperature superconductive trap filter |
| CN204289664U (en) * | 2014-12-09 | 2015-04-22 | 中国电子科技集团公司第十六研究所 | A kind of micro-band elliptic function band stop filter |
-
2014
- 2014-12-09 CN CN201410741367.9A patent/CN104538713B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5448210A (en) * | 1991-06-27 | 1995-09-05 | Dassault Electronique | Tunable microwave bandstop filter device |
| US20020158704A1 (en) * | 2001-03-21 | 2002-10-31 | Shen Ye | Device approximating a shunt capacitor for strip-line-type circuits |
| CN101320840A (en) * | 2008-06-24 | 2008-12-10 | 东南大学 | Multi-stop band ultra-wideband antenna based on miniaturization double module resonator |
| CN203071886U (en) * | 2012-12-28 | 2013-07-17 | 中国电子科技集团公司第十六研究所 | High-temperature superconductive trap filter |
| CN204289664U (en) * | 2014-12-09 | 2015-04-22 | 中国电子科技集团公司第十六研究所 | A kind of micro-band elliptic function band stop filter |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109244610A (en) * | 2018-09-13 | 2019-01-18 | 中国电子科技集团公司第十六研究所 | A kind of adjustable dual mode filter |
| CN109244610B (en) * | 2018-09-13 | 2024-05-10 | 中国电子科技集团公司第十六研究所 | Adjustable dual-mode filter |
| CN111030639A (en) * | 2019-12-25 | 2020-04-17 | 天通瑞宏科技有限公司 | Elliptical surface acoustic wave filter |
| CN111030639B (en) * | 2019-12-25 | 2023-07-21 | 天通瑞宏科技有限公司 | Elliptic surface acoustic wave filter |
| CN111180848A (en) * | 2020-02-19 | 2020-05-19 | 南京大学 | Device and method for realizing compact adjustable microwave resonator by NbN dynamic inductor |
| CN111180848B (en) * | 2020-02-19 | 2024-04-30 | 南京大学 | Device and method for realizing compact adjustable microwave resonator by NbN dynamic inductance |
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| CN104538713B (en) | 2017-06-06 |
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Address after: 230088 658 Wangjiang West Road, Hefei high tech Zone, Anhui Patentee after: CHINA ELECTRONICS TECHNOLOGY Group CORPORATION NO 16 INSTITUTE Address before: 230043 No. 439, Suixi Road, Hefei, Anhui Patentee before: CHINA ELECTRONICS TECHNOLOGY Group CORPORATION NO 16 INSTITUTE |