CN105655671A - Stacked-structure-based SIR microstrip band-pass filter - Google Patents
Stacked-structure-based SIR microstrip band-pass filter Download PDFInfo
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- CN105655671A CN105655671A CN201410701956.4A CN201410701956A CN105655671A CN 105655671 A CN105655671 A CN 105655671A CN 201410701956 A CN201410701956 A CN 201410701956A CN 105655671 A CN105655671 A CN 105655671A
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- 230000005540 biological transmission Effects 0.000 claims abstract description 15
- 238000010168 coupling process Methods 0.000 claims abstract description 7
- 238000005859 coupling reaction Methods 0.000 claims abstract description 7
- 230000008878 coupling Effects 0.000 claims abstract description 6
- 238000010276 construction Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 2
- 239000002356 single layer Substances 0.000 abstract description 2
- 239000003990 capacitor Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000003012 network analysis Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 240000004859 Gamochaeta purpurea Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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Abstract
The invention discloses a stacked-structure-based SIR microstrip band-pass filter. On the basis of characteristics of the SIR structure, harmonic waves are suppressed; and a transmission zero point is obtained by using input and output taps. With a multi-port network analysis method, the position of the generated transmission zero point can be predicted and adjusted. On The basis of a backrest type SRI filter, adding of a lumped coupling capacitor into the circuit is not required; and the filter has a single-layer full-plane structure and integration with other circuits can be realized conveniently.
Description
Technical field
The present invention relates to a kind of band filter being applied in microwave telecommunication system, often play a part to suppress the image frequency of near pass-band.
Background technology
Play a part to suppress the image frequency of near pass-band in microwave telecommunication system because microstrip bandpass filter is everlasting, this just requires that it has good stopband attenuation, precipitous passband-stop-band transition, and the parasitic passband away from mid frequency. Traditional if Coupled Miccrostrip Lines wave filter is by parallel coupling cascading multiple stages half-wave resonator, it is possible to obtain performance preferably. But traditional structure often area occupied is relatively big, and can produce parasitic passband on the integer frequency of mid frequency.
Summary of the invention
The SIR (step electric impedance resonator) of present invention design adopts the transmission line of different characteristic impedance to be connected, can effectively reduce circuit size, and make the frequency of harmonic wave away from passband, adopt tap structure to reduce circuit size further simultaneously, optimize band-pass behavior. And during the employing input and output tap of the wave filter of coupled structure, the space that first and last two is grade coupled can be saved, moreover it is possible in stopband, produce transmission zero.
The present invention proposes a kind of SIR wave filter adopting multi-layer-coupled structure, utilizes the characteristic of SIR structure to suppress harmonic wave, utilizes input and output tap to obtain transmission zero. Analyzing method by multiport network, the transmission zero location that this structure produces is measurable and adjustable. On the basis of backrest type SRI wave filter, without adding lump coupling electric capacity in circuit, belonging to monolayer whole plane structure, what be conducive to other circuit is integrated.
The technical solution adopted for the present invention to solve the technical problems is.
By half-wavelength SRI resonator stacking; by two ends microstrip line multi-layer-coupled, the low characteristic impedance part microstrip line at two ends constitutes multilamellar Rhizoma Nelumbinis and closes structure, provides the coupling between adjacent resonators; second and third grade of SRI adopts backrest type structure, and middle high impedance section microstrip line is mutually coupled; Adopt input and output tap structure, and filter construction can be regarded multilamellar Rhizoma Nelumbinis as and close microstrip line unit and middle transmission line-coupling line-transmission line is unit cascaded forms.
The invention has the beneficial effects as follows: producing three transmission zeros in stopband, and in stopband, the frequency of transmission zero can be changed by adjustment tap position, circuit structure is relatively simple, it is also possible to coupled cascade extends, it is thus achieved that better stopband attenuation. It is easily integrated and parasitic passband scalable while reducing cost.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described.
Fig. 1 is half-wavelength SIR basic structure schematic diagram of the present invention.
Fig. 2 is the SIR bandpass filter structures schematic diagram of multi-layer-coupled structure in the present invention.
Detailed description of the invention
As it is shown in figure 1, SIR is formed by more than 2 transmission line combination with different characteristic impedance, half-wavelength SIR is structure symmetrically, and harmonic frequency is by electrical length
As shown in Figure 2; by half-wavelength SRI resonator stacking; it is the present invention by the multi-layer-coupled of two ends microstrip line; the low characteristic impedance part microstrip line at its two ends constitutes multilamellar Rhizoma Nelumbinis and closes structure; coupling between adjacent resonators is provided; second and third grade of SRI adopts backrest type structure, and middle high impedance section microstrip line is mutually coupled; Adopting input and output tap structure, and top adopts an input tap, lower section adopts two output taps, whereinFor the length of two ends transmission line,The distance of tap is inputted for intermediate conveyor linear distance,For transmission line thickness,It is the gap between 1,2 grades,It it is the gap between two, three grades.
Claims (3)
1. the SIR microstrip bandpass filter of a stepped construction, it is characterised in that: the image frequency of near pass-band can be suppressed, three transmission zeros can be produced in stopband, and in stopband, the frequency of transmission zero can be changed by adjustment tap position.
2. the SIR microstrip bandpass filter of the stepped construction described in claim 1, it is characterized in that: adopt SIR (step electric impedance resonator) as primary structure, the transmission line adopting different characteristic impedance is connected, the characteristic utilizing SIR structure suppresses harmonic wave, adopt tap structure to reduce circuit size further simultaneously, optimize band-pass behavior.
3. the SIR microstrip bandpass filter of the stepped construction described in claim 1, it is characterized in that: by half-wavelength SRI resonator stacking, by two ends microstrip line multi-layer-coupled, the low characteristic impedance part microstrip line at its two ends constitutes multilamellar Rhizoma Nelumbinis and closes structure, coupling between adjacent resonators is provided, second and third grade of SRI adopts backrest type structure, and middle high impedance section microstrip line is mutually coupled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410701956.4A CN105655671A (en) | 2014-11-28 | 2014-11-28 | Stacked-structure-based SIR microstrip band-pass filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410701956.4A CN105655671A (en) | 2014-11-28 | 2014-11-28 | Stacked-structure-based SIR microstrip band-pass filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105655671A true CN105655671A (en) | 2016-06-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410701956.4A Pending CN105655671A (en) | 2014-11-28 | 2014-11-28 | Stacked-structure-based SIR microstrip band-pass filter |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106992339A (en) * | 2017-03-24 | 2017-07-28 | 电子科技大学 | It is a kind of applied to WLAN dual-frequency point characteristics of conformal wave filter and preparation method thereof |
| CN108232383A (en) * | 2018-01-03 | 2018-06-29 | 京东方科技集团股份有限公司 | High-pass filter, liquid crystal antenna element and LCD phased array antenna |
| CN108494378A (en) * | 2018-01-12 | 2018-09-04 | 浙江工业大学 | There are two the broadside coupled LTCC bandpass filters of transmission zero for tool |
-
2014
- 2014-11-28 CN CN201410701956.4A patent/CN105655671A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106992339A (en) * | 2017-03-24 | 2017-07-28 | 电子科技大学 | It is a kind of applied to WLAN dual-frequency point characteristics of conformal wave filter and preparation method thereof |
| CN108232383A (en) * | 2018-01-03 | 2018-06-29 | 京东方科技集团股份有限公司 | High-pass filter, liquid crystal antenna element and LCD phased array antenna |
| CN108494378A (en) * | 2018-01-12 | 2018-09-04 | 浙江工业大学 | There are two the broadside coupled LTCC bandpass filters of transmission zero for tool |
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Application publication date: 20160608 |
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| WD01 | Invention patent application deemed withdrawn after publication |