CN204289664U - A kind of micro-band elliptic function band stop filter - Google Patents
A kind of micro-band elliptic function band stop filter Download PDFInfo
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- CN204289664U CN204289664U CN201420764352.XU CN201420764352U CN204289664U CN 204289664 U CN204289664 U CN 204289664U CN 201420764352 U CN201420764352 U CN 201420764352U CN 204289664 U CN204289664 U CN 204289664U
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- elliptic function
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- mode resonator
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Abstract
The utility model relates to a kind of micro-band elliptic function band stop filter, comprises input sub-miniature A connector, exports sub-miniature A connector and micro-band elliptic function rejector circuit.Micro-band elliptic function rejector circuit comprises micro-band main line and along the spaced singlemode resonance device of micro-band main line and dual-mode resonator.Singlemode resonance device and dual-mode resonator are coupled with micro-band main line respectively.Singlemode resonance device is identical with the centre frequency of dual-mode resonator, and the micro-band main line spacing between singlemode resonance device and dual-mode resonator is quarter-wave.Dual-mode resonator is made up of the resonant element that two intercouple, and two resonant elements are the singlemode resonance device of 1/2nd wavelength, and the resonance frequency of two resonant elements lays respectively at the both sides of centre frequency.From above technical scheme, the utility model has elliptic function transmission characteristic, has the features such as trap suppresses deeply, squareness factor is high, pass band insertion loss is little.
Description
Technical field
The utility model relates to microwave device technology field, is specifically related to a kind of micro-band elliptic function band stop filter.
Background technology
Compare with chebyshev function filter, the fertile hereby function filter of Bart, the elliptic function filter of identical exponent number can realize more precipitous cut-off.But due to the prototype circuit more complicated of elliptic function filter, it is more that corresponding microwave filter is used for the transmission line such as strip line, waveguide form, and it is still few to be applied to microstrip line form.Conventional design method is based on chebyshev function, the theoretical formula of accurate calculating, the filter designed only can realize puppet/quasi-elliptic function transmission curve, under same filter exponent number, there is the deficiencies such as notch depth is little, squareness factor is low, pass band insertion loss is large.
Utility model content
The purpose of this utility model is to provide a kind of micro-band elliptic function band stop filter, and this band stop filter has elliptic function transmission characteristic, has the features such as trap suppresses deeply, squareness factor is high, pass band insertion loss is little.
For achieving the above object, the utility model have employed following technical scheme:
A kind of micro-band elliptic function band stop filter, comprises input sub-miniature A connector, exports sub-miniature A connector and micro-band elliptic function rejector circuit.
Described micro-band elliptic function rejector circuit comprises micro-band main line and along the spaced singlemode resonance device of micro-band main line and dual-mode resonator.Singlemode resonance device and dual-mode resonator are arranged along the interval, side of micro-band main line, or arrange along the interval, both sides of micro-band main line.Described singlemode resonance device and dual-mode resonator are coupled with micro-band main line respectively.Described singlemode resonance device is identical with the centre frequency of dual-mode resonator, and the micro-band main line spacing between singlemode resonance device and adjacent dual-mode resonator is quarter-wave.
Described dual-mode resonator can produce bimodulus, is single dual-mode resonator.Or dual-mode resonator can produce bimodulus, the resonant element intercoupled by two forms side by side, and two resonant elements are the singlemode resonance device of 1/2nd wavelength, and the resonance frequency of two resonant elements lays respectively at the both sides of centre frequency.That is, the resonance frequency of a resonant element is greater than centre frequency, and the resonance frequency of another one resonant element is less than centre frequency.
Further, the outside of described micro-band elliptic function rejector circuit is provided with box body, micro-band elliptic function rejector circuit is welded on bottom box body by the indium sheet that 0.1mm is thick, and its input, output respectively with input sub-miniature A connector, export sub-miniature A connector and be weldingly connected.
Further, described micro-band elliptic function rejector circuit adopts magnesium oxide as substrate, the high-temperature superconductor YBa of 5000 dusts in the sputtering of substrate two sides
2cu
3o
7-Δ film, at high-temperature superconductor YBa
2cu
3o
7on-Δ film, in-situ sputtering has the golden film of 500 dusts, wherein the high-temperature superconductor YBa of one side
2cu
3o
7-Δ film and golden film all retain, and as ground plane, the input/output interface part on another side is golden film, and remainder is high-temperature superconductor YBa
2cu
3o
7-Δ film.
From above technical scheme, the utility model had both been provided with singlemode resonance device on micro-band main line, additionally use dual-mode resonator, this can produce the transmission zero identical with resonator number in the stopband of band stop filter, the passband of this band stop filter and stopband is made all to have the attenuation characteristic of fluctuating, namely frequency response characteristic is elliptic function, thus makes the transition between passband and stopband more precipitous.In sum, the utility model not only has elliptic function transmission characteristic, also has the features such as trap suppresses deeply, squareness factor is high, pass band insertion loss is little.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model micro-band elliptic function band stop filter;
Fig. 2 is the structural representation of the utility model micro-band elliptic function rejector circuit;
Fig. 3 is the equivalent circuit diagram of the utility model micro-band elliptic function rejector circuit;
Fig. 4 is the transmission curve figure of the utility model dual-mode resonator.
Wherein:
1, sub-miniature A connector is inputted, 2, export sub-miniature A connector, 3, box body, 4, micro-band elliptic function rejector circuit, 5, pad, 6, micro-band main line, 7, dual-mode resonator, 8, resonant element, 9, singlemode resonance device.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described further:
The micro-band elliptic function of one as shown in Figure 1 band stop filter, comprises input sub-miniature A connector 1, exports sub-miniature A connector 2, box body 3 and micro-band elliptic function rejector circuit 4.Described micro-band elliptic function rejector circuit 4 is arranged on the inside of box body 3, micro-band elliptic function rejector circuit 4 is welded on bottom box body 3 by the indium sheet that 0.1mm is thick, and its input, output respectively with input sub-miniature A connector 1, export sub-miniature A connector 2 and be weldingly connected.
Specifically, as shown in Figure 2, described micro-band elliptic function rejector circuit 4 comprises input/output pads 5, micro-band main line 6 and along the spaced singlemode resonance device 9 of micro-band main line 6 and dual-mode resonator 7.Described singlemode resonance device 9 is coupled with micro-band main line 6 respectively with dual-mode resonator 7.Described singlemode resonance device 9 is identical with the centre frequency of dual-mode resonator 7, and the micro-band main line spacing between singlemode resonance device 9 and adjacent dual-mode resonator 7 is quarter-wave.
Described dual-mode resonator 7 is made up of side by side two resonant elements intercoupled 8, and two resonant elements 8 are the singlemode resonance device of 1/2nd wavelength, and the resonance frequency of two resonant elements 8 lays respectively at the both sides of this band stop filter centre frequency.By adjusting the distance between the length of resonant element and two resonant elements, dual-mode resonator can be made at the centre frequency place resonance of this band stop filter.The transmission curve of this dual-mode resonator 7 as shown in Figure 4.Under dual-mode resonator structure, dual-mode resonator 7 creates the zero point (dotted line S21) in two bands.
Described micro-band elliptic function rejector circuit 4 adopts magnesium oxide as substrate, the high-temperature superconductor YBa of 5000 dusts in the sputtering of substrate two sides
2cu
3o
7-Δ film, at high-temperature superconductor YBa
2cu
3o
7on-Δ film, in-situ sputtering has the golden film of 500 dusts, wherein the high-temperature superconductor YBa of one side
2cu
3o
7-Δ film and golden film all retain, and as ground plane, the input/output interface part on another side is golden film, and remainder is high-temperature superconductor YBa
2cu
3o
7-Δ film.
Fig. 3 is the equivalent circuit diagram of micro-band elliptic function rejector circuit.Wherein, the inductance L 1 of mutual series connection respectively forms a singlemode resonance device with electric capacity C7, mutual inductance L 10 of connecting with electric capacity C10, the inductance L 13 of mutually connecting and electric capacity C13 with electric capacity C4, mutual inductance L 7 of connecting with electric capacity C1, mutual inductance L 4 of connecting, and each resonator is coupled with micro-band main line respectively.Inductance L 2 parallel with one another intercouples with C3 with C2 and inductance L 3 parallel with one another, forms a dual-mode resonator; Inductance L 5 parallel with one another intercouples with C6 with C5 and inductance L 6 parallel with one another, forms a dual-mode resonator; Inductance L 8 parallel with one another intercouples with C9 with C8 and inductance L 9 parallel with one another, forms a dual-mode resonator; Inductance L 11 parallel with one another intercouples with C12 with C11 and inductance L 12 parallel with one another, forms a dual-mode resonator; Each dual-mode resonator is coupled with micro-band main line respectively.
As can be seen from Figure 3, singlemode resonance device and dual-mode resonator interval are arranged, known by impedance transformation, and micro-band main line spacing is therebetween quarter-wave.
Operation principle of the present utility model is:
By frequency translation and impedance transformation, lump function elliptic function band stop filter is converted to micro-band forms.Adopt Two-mode Coupling unit can produce multipair zero point in band, realize transmission elliptic function response model.
Above-described embodiment is only be described preferred implementation of the present utility model; not scope of the present utility model is limited; under the prerequisite not departing from the utility model design spirit; the various distortion that those of ordinary skill in the art make the technical solution of the utility model and improvement, all should fall in protection range that the utility model claims determine.
Claims (4)
1. a micro-band elliptic function band stop filter, is characterized in that: comprise input sub-miniature A connector (1), export sub-miniature A connector (2) and micro-band elliptic function rejector circuit (4);
Described micro-band elliptic function rejector circuit (4) comprises micro-band main line (6) and along the spaced singlemode resonance device (9) of micro-band main line (6) and dual-mode resonator (7); Described singlemode resonance device (9) and dual-mode resonator (7) are coupled with micro-band main line (6) respectively; Described singlemode resonance device (9) is identical with the centre frequency of dual-mode resonator (7), and the micro-band main line spacing between singlemode resonance device (9) and adjacent dual-mode resonator (7) is quarter-wave.
2. one according to claim 1 micro-band elliptic function band stop filter, it is characterized in that: described dual-mode resonator (7) is made up of side by side two resonant elements intercoupled (8), two resonant elements (8) are the singlemode resonance device of 1/2nd wavelength, and the resonance frequency of two resonant elements (8) lays respectively at the both sides of centre frequency.
3. one according to claim 1 micro-band elliptic function band stop filter, it is characterized in that: the outside of described micro-band elliptic function rejector circuit (4) is provided with box body (3), micro-band elliptic function rejector circuit (4) is welded on box body (3) bottom by the indium sheet that 0.1mm is thick, and its input, output respectively with input sub-miniature A connector (1), export sub-miniature A connector (2) and be weldingly connected.
4. one according to claim 1 micro-band elliptic function band stop filter, is characterized in that: described micro-band elliptic function rejector circuit (4) adopts magnesium oxide as substrate, the high-temperature superconductor YBa of 5000 dusts in the sputtering of substrate two sides
2cu
3o
7-Δ film, at high-temperature superconductor YBa
2cu
3o
7on-Δ film, in-situ sputtering has the golden film of 500 dusts, wherein the high-temperature superconductor YBa of one side
2cu
3o
7-Δ film and golden film all retain, and as ground plane, the input/output interface part on another side is golden film, and remainder is high-temperature superconductor YBa
2cu
3o
7-Δ film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201420764352.XU CN204289664U (en) | 2014-12-09 | 2014-12-09 | A kind of micro-band elliptic function band stop filter |
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CN201420764352.XU CN204289664U (en) | 2014-12-09 | 2014-12-09 | A kind of micro-band elliptic function band stop filter |
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CN201420764352.XU Withdrawn - After Issue CN204289664U (en) | 2014-12-09 | 2014-12-09 | A kind of micro-band elliptic function band stop filter |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104538713A (en) * | 2014-12-09 | 2015-04-22 | 中国电子科技集团公司第十六研究所 | Micro-strip elliptic function band rejection filter |
CN109831177A (en) * | 2018-12-20 | 2019-05-31 | 天津大学 | A kind of more stop-band filters and its implementation |
-
2014
- 2014-12-09 CN CN201420764352.XU patent/CN204289664U/en not_active Withdrawn - After Issue
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104538713A (en) * | 2014-12-09 | 2015-04-22 | 中国电子科技集团公司第十六研究所 | Micro-strip elliptic function band rejection filter |
CN104538713B (en) * | 2014-12-09 | 2017-06-06 | 中国电子科技集团公司第十六研究所 | A kind of micro-strip elliptic function bandstop filter |
CN109831177A (en) * | 2018-12-20 | 2019-05-31 | 天津大学 | A kind of more stop-band filters and its implementation |
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AV01 | Patent right actively abandoned |
Granted publication date: 20150422 Effective date of abandoning: 20170606 |
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AV01 | Patent right actively abandoned |