CN103956541A - Substrate integrated waveguide filter utilizing microstrip lines for achieving cross coupling - Google Patents

Substrate integrated waveguide filter utilizing microstrip lines for achieving cross coupling Download PDF

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Publication number
CN103956541A
CN103956541A CN201410159286.8A CN201410159286A CN103956541A CN 103956541 A CN103956541 A CN 103956541A CN 201410159286 A CN201410159286 A CN 201410159286A CN 103956541 A CN103956541 A CN 103956541A
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line
resonator
minor matters
metal
rabbet joint
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CN103956541B (en
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王世伟
陈瑞森
汪凯
郭在成
林景裕
褚庆昕
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South China University of Technology SCUT
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South China University of Technology SCUT
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Abstract

The invention discloses a substrate integrated waveguide filter utilizing microstrip lines for achieving cross coupling. The substrate integrated waveguide filter comprises a first dielectric slab, a second dielectric slab, a first metal sheet, a second metal sheet, an upper row of metal through holes and a lower row of metal through holes. The upper row of metal through holes and the lower row of metal through holes penetrate through the first metal sheet, the first dielectric slab and the second metal sheet in sequence. A first groove line, a second groove line, a third groove line, a fourth groove line and a fifth groove line are formed in the second metal sheet from left to right in sequence, and a first resonator, a second resonator, a third resonator and a fourth resonator are formed between the adjacent groove lines. A first metal microstrip line and a second metal microstrip line are arranged on the front face of the second dielectric slab, and the two ends of the first metal microstrip line and the two ends of the second microstrip line are loaded with branch knots respectively. The substrate integrated waveguide filter has the advantages of being simple in structure and good in performance, electric field coupling is achieved through the groove lines, cross coupling is achieved through the microstrip lines on the basis of electric field coupling, and the requirement of a modern communication system can be met well.

Description

A kind of microstrip line that utilizes is realized cross-linked substrate integral wave guide filter
Technical field
The present invention relates to a kind of substrate integral wave guide filter, especially a kind of microstrip line that utilizes is realized cross-linked substrate integral wave guide filter, belongs to field of wireless communication.
Background technology
Wireless communication technique is being brought into play more and more important effect in society life, as the important composition of field of wireless communication, does not follow, and the demand of band pass filter also increases day by day.Compared with microstrip bandpass filter early, because the convenience in plane drawing and making sheet is widely used, still the loss of this filter is large, can produce very large energy emission especially in high frequency.Along with the development of mechanics of communication, also more and more higher to the requirement of filter.Although adopt the millimeter wave filter of metal waveguide can reach good technical indicator, involve great expense, can not be widely used; The millimeter wave filter with EBG (Electromagnetic Band-Gap) structure, can be good at meeting present technical requirement, but this filter volume is larger.Recently, adopt the millimeter wave filter of substrate integration wave-guide (Substrate Integrated Waveguide is called for short SIW) to be subject to very high attention, it is little that it can realize volume, the high-performance band-pass filter device that cost is low.It is a kind of novel waveguide, has the advantages that traditional metal waveguide quality factor are high, be easy to design, also has the unexistent features of conventional waveguide such as volume is little, cost is low, easy processing simultaneously.Its these advantages, make the filter of this structure be widely used in wireless telecommunication system.
Substrate integral wave guide filter is mainly to adopt magnetic Field Coupling structure, namely utilize metal throuth hole window to realize the coupling between adjacent cavity, also can realize the cross-couplings between non-conterminous cavity simultaneously, and at present fewer substrate integral wave guide filter adopts field coupled (fluting is realized the coupling between adjacent resonators on substrate integrated wave-guide cavity wave), on the basis of field coupled, realize cross-linked substrate integral wave guide filter very rare especially.
With understanding, disclosed prior art is as follows according to investigations:
1) 2010, the people such as Li Rong-Qiang deliver and are entitled as " " Design of Substrate Integrated Waveguide Transversal Filter With High Selectivity on IEEE Microwave and Wireless Components Letters, " article in, a kind of filter device that utilizes magnetic Field Coupling and source load coupling has been proposed, structure as shown in Figure 1a, metal throuth hole window between cavity is used for realizing magnetic Field Coupling, between source and load end, introduce source load coupling simultaneously, can on the both sides of passband, respectively produce a zero point, improve band external characteristic.Fig. 1 b is its simulation result.
2) 2013, the people such as You Chang Jiang deliver in the article that is entitled as " Single-Layered SIW Post-Loaded Electric Coupling-Enhanced Structure and Its Filter Applications " on IEEE Transaction on Microwave Theory and Techniques, proposed a kind of in the middle of adjacent cavity fluting realize field coupled between cavity, as shown in Figure 2 a, like this, existing magnetic Field Coupling in whole filter, there is field coupled simultaneously, transmission zero can be controlled flexibly, Fig. 2 b is the frequency response results of its measurement and emulation.
3) 2005, X.Chen, the people such as W.Hong deliver the article that is entitled as " Substrate integrated waveguide elliptic filter with transmission line inserted inverter " and have proposed to utilize microstrip line to realize the coupling between non-adjacent resonant cavity at IEEE Eletronic Letters, this structure as shown in Figure 3 a, between resonant cavity 1 and 4, with microstrip line, realize cross-couplings, from the simulation result shown in Fig. 3 b, can find out that this filter can produce two transmission zeros.
4) 2013, the people such as ShenWei are at IEEE Transaction on Components, on Packaging and Manufacturing Technology, deliver to be entitled as between resonator that " Substrate-Integrated Waveguide Bandpass Filters With Planar Resonators for System-on-Package " proposed to consist of microstrip line and resonant cavity and realize coupling, it between them, is field coupled, and between resonant cavity, remain magnetic Field Coupling, as shown in Fig. 4 a, the advantage of this structure is to replace resonant cavity with the resonator that microstrip line forms, reaching the size that has reduced filter on the basis of same effect, simulation result as shown in Figure 4 b.
Above-mentioned four kinds of substrate integral wave guide filters are all on the basis based on magnetic Field Coupling, to realize field coupled and cross-couplings, and magnetic Field Coupling is to regulate by the inductance window between adjacent cavity, when magnetic Field Coupling changes greatly, by inductance window, regulate and will seem quite complicated.
Summary of the invention
The object of the invention is in order to solve the defect of above-mentioned prior art, provide a kind of simple in structure, performance good, can meet well the microstrip line that utilizes that modern communication systems requires and realize cross-linked substrate integral wave guide filter.
Object of the present invention can be by taking following technical scheme to reach:
A kind of microstrip line that utilizes is realized cross-linked substrate integral wave guide filter, it is characterized in that: comprise the first medium plate, second medium plate, the first sheet metal, the second sheet metal and the two rows metal throuth hole that form substrate integration wave-guide, from bottom to top, by the order of the first sheet metal, first medium plate, the second sheet metal and second medium plate, set gradually, described the first sheet metal is as floor, and described two rows metal throuth hole runs through the first sheet metal, first medium plate and the second sheet metal successively; Described the second sheet metal has first line of rabbet joint, second line of rabbet joint, third slot line, the 4th line of rabbet joint and the 5th line of rabbet joint from left to right successively, between adjacent two line of rabbet joint, form respectively the first resonator, the second resonator, the 3rd resonator and the 4th resonator, between described the first resonator and the second resonator, by second line of rabbet joint, realize field coupled, between described the second resonator and the 3rd resonator, by third slot line, realize field coupled, between described the 3rd resonator and the 4th resonator, by the 4th line of rabbet joint, realize field coupled; The front of described second medium plate is provided with the first metal micro-strip line and the second metal micro-strip line, the two ends of described the first metal micro-strip line and the second metal micro-strip line are loaded with respectively minor matters, between described the first resonator and the 3rd resonator, by the first metal micro-strip line, realize cross-couplings, between described the second resonator and the 4th resonator, by the second metal micro-strip line, realize cross-couplings.
As a kind of preferred version, one end of described the first metal micro-strip line is arranged on the position corresponding with the first resonator and is loaded with the first minor matters, and the other end is arranged on the position corresponding with the 3rd resonator and is loaded with the second minor matters; One end of described the second metal micro-strip line is arranged on the position corresponding with the second resonator and is loaded with the 3rd minor matters, and the other end is arranged on the position corresponding with the 4th resonator and is loaded with the 4th minor matters.
As a kind of preferred version, described the first minor matters, the second minor matters, the 3rd minor matters and the 4th minor matters are the minor matters of 1/4 guide wavelength.
As a kind of preferred version, described the first minor matters, the second minor matters, the 3rd minor matters and the 4th minor matters are the minor matters of 1/2 guide wavelength.
As a kind of preferred version, described the first minor matters and the 4th minor matters are the minor matters of 1/4 guide wavelength, and described the second minor matters and the 3rd minor matters are the minor matters of 1/2 guide wavelength.
As a kind of preferred version, described upper row's metal throuth hole is arranged on the upper edge near the first sheet metal and the second sheet metal, and described lower row's metal throuth hole is arranged on the lower edge near the first sheet metal and the second sheet metal.
As a kind of preferred version, described the second sheet metal is provided with output port and input port, and described output port and input port are separately positioned on the two ends, left and right of the second sheet metal.
As a kind of preferred version, described first line of rabbet joint, second line of rabbet joint, third slot line, the 4th line of rabbet joint and the 5th line of rabbet joint are all between upper row's metal throuth hole and lower row's metal throuth hole.
As a kind of preferred version, described first line of rabbet joint, second line of rabbet joint, third slot line, the 4th line of rabbet joint and the 5th line of rabbet joint are the line of rabbet joint that is shaped as rectangle.
The present invention has following beneficial effect with respect to prior art:
1, substrate integral wave guide filter of the present invention have advantages of simple in structure, performance good, by being set, many line of rabbet joint realize field coupled, and utilize microstrip line to realize cross-couplings on the basis of field coupled, and can meet well the requirement of modern communication systems, there is good application prospect.
2, substrate integral wave guide filter of the present invention designs based on field coupled, and field coupled size can regulate by height and the width of the line of rabbet joint, and it is easier to need compared to existing technology to regulate by inductance window size.
3, substrate integral wave guide filter of the present invention utilizes microstrip line to realize in cross-couplings on the basis of field coupled, the minor matters that can load different length at the two ends of microstrip line are (as one end loads 1/4 guide wavelength, the other end loads 1/2 guide wavelength), can produce so better coupling, and reduced the return loss in band, the interior performance of band of filter is improved.
Accompanying drawing explanation
Fig. 1 a is the structural representation of the first prior art.
Fig. 1 b is the simulation result figure of the first prior art.
Fig. 2 a is the structural representation of the second prior art.
Fig. 2 b is the simulation result figure of the second prior art.
Fig. 3 a is the structural representation of the third prior art.
Fig. 3 b is the simulation result figure of the third prior art.
Fig. 4 a is the structural representation of the 4th kind of prior art.
Fig. 4 b is the simulation result figure of the 4th kind of prior art.
Fig. 5 is the side structure schematic diagram of the substrate integral wave guide filter of the embodiment of the present invention 1.
Fig. 6 is the structural representation of the second sheet metal in the substrate integral wave guide filter of the embodiment of the present invention 1.
Fig. 7 is the Facad structure schematic diagram of second medium plate in the substrate integral wave guide filter of the embodiment of the present invention 1.
Fig. 8 is the cross-couplings mechanism of production schematic diagram of the first resonator and the 3rd resonator in the substrate integral wave guide filter of the embodiment of the present invention 1.
Fig. 9 is the propagation properties schematic diagram that the embodiment of the present invention 1 loads 1/4 λ g minor matters.
Figure 10 is the substrate integral wave guide filter topological structure schematic diagram of the embodiment of the present invention 1.
Figure 11 is the theoretic frequency response diagram of the coupling matrix (1) of the embodiment of the present invention 1.
Figure 12 is the coupling coefficient K of the embodiment of the present invention 1 12change curve.
Figure 13 is the coupling coefficient K of the embodiment of the present invention 1 23change curve.
Figure 14 is the coupling coefficient K of the embodiment of the present invention 1 13change curve.
Figure 15 is the quality factor q of the embodiment of the present invention 1 ecurve chart.
Figure 16 is the S parameters simulation result figure after the substrate integral wave guide filter of the embodiment of the present invention 1 is optimized.
Figure 17 is the Facad structure schematic diagram of second medium plate in the substrate integral wave guide filter of the embodiment of the present invention 2.
Figure 18 is the propagation properties schematic diagram that the embodiment of the present invention 2 loads 1/2 λ g minor matters.
Figure 19 is the substrate integral wave guide filter topological structure schematic diagram of the embodiment of the present invention 2.
Figure 20 is the theoretic frequency response diagram of coupling matrix (5) gained of the embodiment of the present invention 2.
Figure 21 is the coupling coefficient K of the embodiment of the present invention 2 13change curve.
Figure 22 is the S parameters simulation result figure after the substrate integral wave guide filter of the embodiment of the present invention 2 is optimized.
Figure 23 is the Facad structure schematic diagram of second medium plate in the substrate integral wave guide filter of the embodiment of the present invention 3.
Figure 24 is the propagation properties schematic diagram that the embodiment of the present invention 3 loads 1/4 λ g minor matters and 1/2 λ g minor matters.
Figure 25 is the substrate integral wave guide filter topological structure schematic diagram of the embodiment of the present invention 3.
Figure 26 is the S parameters simulation result figure after the substrate integral wave guide filter of the embodiment of the present invention 3 is optimized.
Figure 27 is the whole Facad structure schematic diagram that the substrate integral wave guide filter of the embodiment of the present invention 3 has designed.
Figure 28 is simulation result and the measurement result comparison diagram of the substrate integral wave guide filter of the embodiment of the present invention 3.
Wherein, 1-first medium plate, 2-second medium plate, 3-the first sheet metal, 4-the second sheet metal, 5-metal throuth hole, 6-output port, 7-input port, 8-first line of rabbet joint, 9-second line of rabbet joint, 10-third slot line, 11-the 4th line of rabbet joint, 12-the 5th line of rabbet joint, 13-the first metal micro-strip line, 14-the second metal micro-strip line, 15-the first minor matters, 16-the second minor matters, 17-the 3rd minor matters, 18-the 4th minor matters, R1-the first resonator, R2-the second resonator, R3-the 3rd resonator, R4-the 4th resonator.
Embodiment
Embodiment 1:
As Fig. 5, shown in Fig. 6 and Fig. 7, the substrate integral wave guide filter of the present embodiment, comprise the first medium plate 1 that forms substrate integration wave-guide (SIW), second medium plate 2, the first sheet metal 3, the second sheet metal 4 and two rows metal throuth hole 5, from bottom to top, press the first sheet metal 3, first medium plate 1, the order of the second sheet metal 4 and second medium plate 2 sets gradually, described the first sheet metal 3 is as floor, described two rows metal throuth hole 5 forms the sidewall of waveguide, and run through successively the first sheet metal 3, first medium plate 1 and the second sheet metal 4, wherein upper row's metal throuth hole 5 is arranged on the upper edge near the first sheet metal 3 and the second sheet metal 4, described lower row's metal throuth hole 5 is arranged on the lower edge near the first sheet metal 3 and the second sheet metal 4,
Described the second sheet metal 4 is provided with output port 6 and input port 7, and described the second sheet metal 4 has first line of rabbet joint 8, second line of rabbet joint 9, third slot line 10, the 4th line of rabbet joint 11 and the 5th line of rabbet joint 12 from left to right successively, described output port 6 and input port 7 are separately positioned on the two ends, left and right of the second sheet metal 4, described first line of rabbet joint 8, second line of rabbet joint 9, third slot line 10, the 4th line of rabbet joint 11 and the 5th line of rabbet joint 12 be shaped as rectangle, all between upper row's metal throuth hole 5 and lower row's metal throuth hole 5, between adjacent two line of rabbet joint, form respectively the first resonator R1, the second resonator R2, the 3rd resonator R3 and the 4th resonator R4 (being quadravalence resonator), between described the first resonator R1 and the second resonator R2, by second line of rabbet joint 9, realize field coupled, between described the second resonator R2 and the 3rd resonator R3, by third slot line 10, realize field coupled, between described the 3rd resonator R3 and the 4th resonator R4, by the 4th line of rabbet joint 11, realize field coupled,
The front of described second medium plate 2 is provided with the first metal micro-strip line 13 and the second metal micro-strip line 14 (part that can see the second metal micro-strip line 14 in Fig. 5 has been blocked by the first metal micro-strip line 13), one end of described the first metal micro-strip line 13 is arranged on the position corresponding with the first resonator R1 and is loaded with the first minor matters 15, and the other end is arranged on the position corresponding with the 3rd resonator R3 and is loaded with the second minor matters 16; One end of described the second metal micro-strip line 14 is arranged on the position corresponding with the second resonator R2 and is loaded with the 3rd minor matters 17, and the other end is arranged on the position corresponding with the 4th resonator R4 and is loaded with the 4th minor matters 18; Described the first minor matters 15, the second minor matters 16, the 3rd minor matters 17 and the 4th minor matters 18 are the 1/4 guide wavelength minor matters of (guide wavelength represents with λ g, is 1/4 λ g); Between described the first resonator R1 and the 3rd resonator R3, by the first metal micro-strip line 13, realize cross-couplings, between described the second resonator R2 and the 4th resonator R4, by the second metal micro-strip line 14, realize cross-couplings;
The cross-couplings of the first resonator R1 and the 3rd resonator R3 of take is example, and as shown in Figure 8, in figure, arrow line is Electric Field Distribution and route of transmission to its cross-couplings mechanism of production, K 12be the coupling coefficient between the first resonator R1 and the second resonator R2, K 23be the coupling coefficient between the second resonator R2 and the 3rd resonator R3, K 13it is the coupling coefficient between the first resonator R1 and the 3rd resonator R3, in conjunction with Fig. 6 and Fig. 7, the energy of described the first resonator R1 is sent to the first metal micro-strip line 13 by second line of rabbet joint 9, by the first metal micro-strip line 13, through third slot line 10, be sent to the 3rd resonator R3 again, realized the cross-couplings between the first resonator R1 and the 3rd resonator R3; In like manner, the energy of described the second resonator R2 is sent to the second metal micro-strip line 14 by third slot line 10, by the second metal micro-strip line 14, through the 4th line of rabbet joint 11, be sent to the 4th resonator R4 again, realized the cross-couplings between the second resonator R2 and the 4th resonator R4;
The substrate integral wave guide filter of the present embodiment has loaded 1/4 λ g minor matters at the two ends of microstrip line, load the propagation properties of 1/4 λ g minor matters as shown in Figure 9, in figure, solid arrow represents incident wave, dotted arrow represents reflected wave, the phase delay that has 180 degree during Electromagnetic Wave Propagation, the cross-linked symbol producing is for negative.
As shown in figure 10, in figure, solid line represents to be just coupled the substrate integral wave guide filter topological structure of the present embodiment, and dotted line represents negative coupling, and S represents source, and L represents load end, K 12represent the coupling coefficient between the first resonator R1 and the second resonator R2, K 23represent the coupling coefficient between the second resonator R2 and the 3rd resonator R3, K 34represent the coupling coefficient between the 3rd resonator R3 and the 4th resonator R4, K 13represent the coupling coefficient between the first resonator R1 and the 3rd resonator R3, K 24represent the coupling coefficient between the second resonator R2 and the 4th resonator R4, Q erepresent quality factor, coupling matrix is as follows:
M 1 = 0 0.8344 0 0 0 0 0.8344 0.0983 0.6249 - 0.2112 0 0 0 0.6249 0.3697 0.5008 - 0.2112 0 0 - 0.2112 0.5008 0.3697 0.6249 0 0 0 - 0.2112 0.6249 0.0983 0.8434 0 0 0 0 0.8434 0 - - - ( 1 )
Figure 11 be coupling matrix (1) gained theoretic frequency response (in figure, dotted line represents | S 11|, be the return loss of input port; Solid line represents | S 21|, be that input port is to the forward transmission coefficient of output port), at low frequency, there is a transmission zero, this transmission zero draws by cross-couplings theory, according to the relational expression (2) of coupling value in the value of coupling matrix element and side circuit:
K ij = FBW · M ij Q E = 1 FBW · M S 1 2 FBW = BW f 0 - - - ( 2 )
Wherein, K ijrepresent the coupling coefficient between i resonator and j resonator, Q erepresent quality factor, FBW represents relative bandwidth, M ijthe value that represents the capable j+1 row of coupling matrix (1) i+1, i.e. coupling value between i and j resonator, M s1the value that represents coupling matrix (1) the 1st row the 2nd row, i.e. coupling value between source and first resonator, BW represents bandwidth, f 0represent centre frequency; 1≤i≤4,1≤j≤4.
Selection Center frequency 3.8GHz, can obtain K 12=K 23=0.075, K 13=0.0275, Q e=12.7; Next, with following formula (3) and (4), extract their value:
K ij = ± 1 2 ( f Ri f Rj + f Rj f Ri ) ( f pj 2 - f pi 2 f pj 2 + f pi 2 ) 2 - ( f Rj 2 - f Ri 2 f Rj 2 + f Ri 2 ) 2 - - - ( 3 )
Q E = 2 f 0 Δf 3 dB - - - ( 4 )
Wherein, f riand f rjrepresent respectively i and j resonator resonance frequency separately, f piand f pjrepresent that i and j resonator produce while interacting by coupling in weak coupling situation two | S 21| peak value, △ f 3dBthe three dB bandwidth that represents filter.
As shown in Figure 12 and Figure 13, be respectively coupling coefficient K 12and K 23change curve; As shown in figure 14, be coupling coefficient K 13change curve; As shown in figure 15, be quality factor q ecurve; Follow the basis theoretical value of gained above, from curve, select suitable point, obtained the value of each parameter, and then be optimized, obtain the simulation result shown in Figure 16, at low frequency, have a transmission zero, corresponding with the frequency response shown in Figure 11.
Embodiment 2:
The main feature of the present embodiment is: as shown in figure 17, described the first minor matters 15, the second minor matters 16, the 3rd minor matters 17 and the 4th minor matters 18 are the minor matters of 1/2 λ g.All the other structures are with embodiment 1.
The substrate integral wave guide filter of the present embodiment has loaded 1/2 λ g minor matters at the two ends of microstrip line, load the propagation properties of 1/2 λ g minor matters as shown in figure 18, in figure, solid arrow represents incident wave, dotted arrow represents reflected wave, the phase delay that has 360 degree during Electromagnetic Wave Propagation, the cross-linked symbol producing is for just, just contrary with embodiment 1, the length of visible minor matters is different, and the cross-couplings characteristic producing is not identical yet.
As shown in figure 19, the solid line in figure represents to be just coupled the substrate integral wave guide filter topological structure of the present embodiment, and coupling matrix is as follows:
M 2 = 0 0.8434 0 0 0 0 0.8434 - 0.0983 0.6249 0.2112 0 0 0 0.6249 - 0.3697 0.5008 0.2112 0 0 0.2112 0.5008 - 0.3697 0.6249 0 0 0 0.2112 0.6249 - 0.0983 0.8434 0 0 0 0 0.8434 0 - - - ( 5 )
Figure 20 be coupling matrix (5) gained theoretic frequency response (in figure, dotted line represents | S 11|, solid line represents | S 21|), at high frequency, there is a transmission zero, this transmission zero draws by cross-couplings theory, identical with the formula (2) of embodiment 1 according to the relational expression of coupling value in the value of coupling matrix element and side circuit, but M ijwhat represent is the value of the capable j+1 row of coupling matrix (5) i+1, M s1what represent is the value of coupling matrix (5) the 1st row the 2nd row; Same Selection Center frequency 3.8GHz, obtains K 12=K 23=0.075, K 13=0.0275, Q e=12.7, and utilize formula (3) and formula (4) to obtain their value, coupling coefficient K 12and K 23change curve identical with embodiment 1, coupling coefficient K 13change curve as shown in figure 21, quality factor q ecurve also identical with embodiment 1, then, according to the theoretical value of gained above, from curve, select suitable point, obtain the value of each parameter, and then be optimized, obtained the simulation result shown in Figure 22, at high frequency, there is a transmission zero, corresponding with the frequency response shown in Figure 20.
Embodiment 3:
The main feature of the present embodiment is: as shown in figure 23, described the first minor matters 15 and the 4th minor matters 18 are the minor matters of 1/4 λ g, and described the second minor matters 16 and the 3rd minor matters 17 are the minor matters of 1/2 λ g.All the other structures are with embodiment 1.
The substrate integral wave guide filter of the present embodiment has loaded 1/4 λ g minor matters in one end of microstrip line, the other end has loaded 1/2 λ g minor matters, load the propagation properties of 1/4 λ g minor matters and 1/2 λ g minor matters as shown in figure 24, in figure, solid arrow represents incident wave, dotted arrow represents reflected wave, during Electromagnetic Wave Propagation, have the phase difference of 180 degree, this structure can produce an extra zero point.
The substrate integral wave guide filter topological structure of the present embodiment as shown in figure 25, solid line in figure represents to be just coupled, pecked line represents hybrid coupled, cross-couplings between cross-couplings between the first resonator R1 and the 3rd resonator R3, the second resonator R2 and the 4th resonator R4 is all hybrid coupled, by optimization, obtain simulation result as shown in figure 26, really there are two transmission zeros, lay respectively at the upper and lower of passband, and having produced better coupling after the minor matters that load different length, the return loss in band has reached below 20dB.According to the size design of optimizing, go out the filter of the present embodiment, as shown in figure 27, as shown in figure 28, dotted line represents simulation result to the curve of its simulation result and measurement result, solid line represents measurement result, can see that simulation result and measurement result have good consistency.
In sum, that substrate integral wave guide filter of the present invention has advantages of is simple in structure, performance good, by being set, many line of rabbet joint realize field coupled, and utilize microstrip line to realize cross-couplings on the basis of field coupled, can meet well the requirement of modern communication systems, have good application prospect.
The above; it is only patent preferred embodiment of the present invention; but the protection range of patent of the present invention is not limited to this; anyly be familiar with those skilled in the art in the disclosed scope of patent of the present invention; according to the present invention, the technical scheme of patent and inventive concept thereof are equal to replacement or are changed, and all belong to the protection range of patent of the present invention.

Claims (9)

1. one kind is utilized microstrip line to realize cross-linked substrate integral wave guide filter, it is characterized in that: comprise the first medium plate, second medium plate, the first sheet metal, the second sheet metal and the two rows metal throuth hole that form substrate integration wave-guide, from bottom to top, by the order of the first sheet metal, first medium plate, the second sheet metal and second medium plate, set gradually, described the first sheet metal is as floor, and described two rows metal throuth hole runs through the first sheet metal, first medium plate and the second sheet metal successively; Described the second sheet metal has first line of rabbet joint, second line of rabbet joint, third slot line, the 4th line of rabbet joint and the 5th line of rabbet joint from left to right successively, between adjacent two line of rabbet joint, form respectively the first resonator, the second resonator, the 3rd resonator and the 4th resonator, between described the first resonator and the second resonator, by second line of rabbet joint, realize field coupled, between described the second resonator and the 3rd resonator, by third slot line, realize field coupled, between described the 3rd resonator and the 4th resonator, by the 4th line of rabbet joint, realize field coupled; The front of described second medium plate is provided with the first metal micro-strip line and the second metal micro-strip line, the two ends of described the first metal micro-strip line and the second metal micro-strip line are loaded with respectively minor matters, between described the first resonator and the 3rd resonator, by the first metal micro-strip line, realize cross-couplings, between described the second resonator and the 4th resonator, by the second metal micro-strip line, realize cross-couplings.
2. a kind of microstrip line that utilizes according to claim 1 is realized cross-linked substrate integral wave guide filter, it is characterized in that: one end of described the first metal micro-strip line is arranged on the position corresponding with the first resonator and is loaded with the first minor matters, the other end is arranged on the position corresponding with the 3rd resonator and is loaded with the second minor matters; One end of described the second metal micro-strip line is arranged on the position corresponding with the second resonator and is loaded with the 3rd minor matters, and the other end is arranged on the position corresponding with the 4th resonator and is loaded with the 4th minor matters.
3. a kind of microstrip line that utilizes according to claim 2 is realized cross-linked substrate integral wave guide filter, it is characterized in that: described the first minor matters, the second minor matters, the 3rd minor matters and the 4th minor matters are the minor matters of 1/4 guide wavelength.
4. a kind of microstrip line that utilizes according to claim 2 is realized cross-linked substrate integral wave guide filter, it is characterized in that: described the first minor matters, the second minor matters, the 3rd minor matters and the 4th minor matters are the minor matters of 1/2 guide wavelength.
5. a kind of microstrip line that utilizes according to claim 2 is realized cross-linked substrate integral wave guide filter, it is characterized in that: described the first minor matters and the 4th minor matters are the minor matters of 1/4 guide wavelength, described the second minor matters and the 3rd minor matters are the minor matters of 1/2 guide wavelength.
6. a kind of microstrip line that utilizes according to claim 1 is realized cross-linked substrate integral wave guide filter, it is characterized in that: described upper row's metal throuth hole is arranged on the upper edge near the first sheet metal and the second sheet metal, described lower row's metal throuth hole is arranged on the lower edge near the first sheet metal and the second sheet metal.
7. a kind of microstrip line that utilizes according to claim 1 is realized cross-linked substrate integral wave guide filter, it is characterized in that: described the second sheet metal is provided with output port and input port, described output port and input port are separately positioned on the two ends, left and right of the second sheet metal.
8. a kind of microstrip line that utilizes according to claim 1 is realized cross-linked substrate integral wave guide filter, it is characterized in that: described first line of rabbet joint, second line of rabbet joint, third slot line, the 4th line of rabbet joint and the 5th line of rabbet joint are all between upper row's metal throuth hole and lower row's metal throuth hole.
9. a kind of microstrip line that utilizes according to claim 1 is realized cross-linked substrate integral wave guide filter, it is characterized in that: described first line of rabbet joint, second line of rabbet joint, third slot line, the 4th line of rabbet joint and the 5th line of rabbet joint are the line of rabbet joint that is shaped as rectangle.
CN201410159286.8A 2014-04-18 2014-04-18 One utilizes microstrip line to realize cross-linked substrate integral wave guide filter Expired - Fee Related CN103956541B (en)

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CN110739510A (en) * 2019-10-29 2020-01-31 摩比科技(深圳)有限公司 dielectric waveguide filter with cross-cavity coupling structure
WO2020211287A1 (en) * 2019-04-15 2020-10-22 江苏贝孚德通讯科技股份有限公司 Dielectric filter and 5g communication device
CN115425378A (en) * 2022-08-26 2022-12-02 电子科技大学 Cross-coupling cavity substrate integrated waveguide band-pass filter

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WO2020211287A1 (en) * 2019-04-15 2020-10-22 江苏贝孚德通讯科技股份有限公司 Dielectric filter and 5g communication device
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CN115425378A (en) * 2022-08-26 2022-12-02 电子科技大学 Cross-coupling cavity substrate integrated waveguide band-pass filter

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