CN203826522U - Broadband substrate integrated waveguide filter adopting U-shaped slot line - Google Patents
Broadband substrate integrated waveguide filter adopting U-shaped slot line Download PDFInfo
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Abstract
本实用新型公开了一种采用U型槽线的宽带基片集成波导滤波器,包括基片集成波导,所述基片集成波导包括介质基板、设置在介质基板正面和反面的两层金属贴片以及上下两排金属通孔,所述两层金属贴片构成基片集成波导的上下壁,所述上下两排金属通孔构成基片集成波导的左右壁,所述介质基板正面的金属贴片上刻蚀有U型槽线,所述刻蚀U型槽线的基片集成波导形成多模谐振器。本实用新型的宽带基片集成波导滤波器利用刻蚀的U型槽线,使基片集成波导形成多模谐振器,消除了在基片集成波导上面刻蚀周期性EBG结构的复杂性,能够满足小型化宽带通信系统要求,既克服了传统微带宽带滤波器损耗大的缺陷,又解决了利用金属波导造价昂贵的问题,有良好的应用前景。
The utility model discloses a broadband substrate-integrated waveguide filter adopting U-shaped groove lines, which comprises a substrate-integrated waveguide, and the substrate-integrated waveguide includes a dielectric substrate and two layers of metal patches arranged on the front and back of the dielectric substrate. And the upper and lower rows of metal through holes, the two layers of metal patches constitute the upper and lower walls of the substrate integrated waveguide, the upper and lower rows of metal through holes constitute the left and right walls of the substrate integrated waveguide, the metal patch on the front of the dielectric substrate U-shaped groove lines are etched thereon, and the substrate integrated with the etched U-shaped groove lines forms a multi-mode resonator. The broadband substrate integrated waveguide filter of the utility model utilizes the etched U-shaped groove line to make the substrate integrated waveguide form a multimode resonator, which eliminates the complexity of etching the periodic EBG structure on the substrate integrated waveguide, and can It meets the requirements of miniaturized broadband communication systems, not only overcomes the defect of large loss of traditional micro-broadband filters, but also solves the problem of high cost of using metal waveguides, and has a good application prospect.
Description
技术领域technical field
本实用新型涉及一种宽带基片集成波导滤波器,尤其是一种采用U型槽线的宽带基片集成波导滤波器,属于无线通讯领域。The utility model relates to a broadband substrate integrated waveguide filter, in particular to a broadband substrate integrated waveguide filter adopting U-shaped groove lines, which belongs to the field of wireless communication.
背景技术Background technique
无线通讯技术在现实社会生活中发挥着越来越重要的作用,作为无线通讯领域的重要组成不跟,带通滤波器的需求也日益增加。较早的微带带通滤波器由于在平面制图和制板上的方便而被广泛应用,但是这种滤波器的损耗大,特别在高频的时候会产生很大的能量辐射。随着通讯技术的不断发展,对滤波器的要求也越来越高。采用金属波导的毫米波滤波器虽然能够达到较好的技术指标,但是造价昂贵,不能被广泛地应用;具有EBG(Electromagnetic Band-Gap)结构的毫米波滤波器,能够很好的满足现在的技术指标要求,但是这种滤波器体积较大。最近,采用基片集成波导(SubstrateIntegrated Waveguide,简称SIW)的毫米波滤波器受到很高的重视,它可以实现体积小,成本低的高性能带通滤波器。它是一种新型波导,具有传统的金属波导品质因数高、易于设计的特点,同时也具有体积小、造价低、易加工等传统波导所没有的特点。它的这些优点,使得这种结构的滤波器被广泛应用于无线通讯系统。Wireless communication technology is playing an increasingly important role in real social life. As an important component in the field of wireless communication, the demand for band-pass filters is also increasing. The earlier microstrip bandpass filter was widely used due to its convenience in plan drawing and board making, but this kind of filter has a large loss, especially at high frequencies, it will produce a lot of energy radiation. With the continuous development of communication technology, the requirements for filters are getting higher and higher. Although the millimeter-wave filter using metal waveguide can achieve better technical indicators, it is expensive and cannot be widely used; the millimeter-wave filter with EBG (Electromagnetic Band-Gap) structure can well meet the current technical requirements. Index requirements, but this filter volume is relatively large. Recently, millimeter-wave filters using Substrate Integrated Waveguide (SIW for short) have received high attention, which can realize high-performance bandpass filters with small size and low cost. It is a new type of waveguide, which has the characteristics of high quality factor and easy design of the traditional metal waveguide, and also has the characteristics that the traditional waveguide does not have, such as small size, low cost, and easy processing. Its advantages make the filter of this structure widely used in wireless communication systems.
据调查与了解,已经公开的现有技术如下:According to investigation and understanding, the existing technologies that have been disclosed are as follows:
1)2005年,祝雷等人在IEEE Microwave and Wireless Components Letters上发表题为“Ultra-wideband(UWB)bandpaSS filters using multiple-mode resonator”的文章中,作者提出了一种采用阶跃阻抗线的多模谐振器,结构如图1a所示,这种结构若干个谐振模式平移到所需要的通带中,实现了一个超宽带滤波器;图1b是它的仿真结果。1) In 2005, Zhu Lei and others published an article titled "Ultra-wideband (UWB) bandpaSS filters using multiple-mode resonator" on IEEE Microwave and Wireless Components Letters. The author proposed a step impedance line Multi-mode resonator, the structure is shown in Figure 1a, several resonant modes of this structure are shifted to the required passband, and an ultra-wideband filter is realized; Figure 1b is its simulation result.
2)以多模谐振器技术为基础,为了提高超宽带通带滤波器的带外抑制水平,研究者们提出了进一步改进方案。2009年,Wong Sai Wai等人在IEEE Microwave andWireless Components Letters上发表题为“Quadruple-mode UWB bandpass filter withimproved out-of-band rejection”的文章中,提出了多模谐振器中引入两个短路枝节线,使第四个谐振模式向频率低端移动,与前三个谐振模式一起构成四模式UWB滤波器,并且分别在较低和较高的截止频率处产生一个传输零点,从而在通带之外产生较高的带外抑制,该四模超宽带滤波器结构如图2a所示,其测量和仿真的频率响应结果如图2b所示。2) Based on the multimode resonator technology, in order to improve the out-of-band suppression level of the ultra-wideband passband filter, the researchers proposed a further improvement scheme. In 2009, Wong Sai Wai et al. published an article titled "Quadruple-mode UWB bandpass filter with improved out-of-band rejection" on IEEE Microwave and Wireless Components Letters, and proposed to introduce two short-circuit stub lines into the multimode resonator , so that the fourth resonant mode moves to the low frequency end, together with the first three resonant modes, it forms a four-mode UWB filter, and produces a transmission zero at the lower and higher cut-off frequencies respectively, thus outside the passband Produce higher out-of-band rejection, the four-mode ultra-wideband filter structure is shown in Figure 2a, and its measured and simulated frequency response results are shown in Figure 2b.
3)上述两种宽带滤波器是在微带线上进行设计的,相对带宽很宽,但是它们有一个共同的缺陷是损耗比较大。2005年,郝张成等人在IEEE Transaction on MicrowaveTheory and Techniques上发表题为“Compact Super-Wide Bandpass Substrate IntegratedWaveguide(SIW)Filters”提出了在基片集成波导上刻蚀出electromagnetic bandgap(EBG)结构,如图3a和图3b所示。仿真结果如图3c所示,相对带宽接近65%,损耗较小,不过这种结构比较复杂,不易于设计和加工。3) The above two broadband filters are designed on the microstrip line and have a relatively wide bandwidth, but they have a common defect that the loss is relatively large. In 2005, Hao Zhangcheng and others published the title "Compact Super-Wide Bandpass Substrate Integrated Waveguide (SIW) Filters" on IEEE Transaction on Microwave Theory and Techniques and proposed to etch an electromagnetic bandgap (EBG) structure on the substrate integrated waveguide, as shown in the figure 3a and 3b. The simulation result is shown in Figure 3c, the relative bandwidth is close to 65%, and the loss is small, but this structure is more complicated and not easy to design and process.
实用新型内容Utility model content
本实用新型的目的是为了解决上述现有技术的缺陷,提供了一种具有多模谐振器,且能够满足小型化宽带通信系统要求的采用U型槽线的宽带基片集成波导滤波器。The purpose of this utility model is to solve the defects of the above-mentioned prior art, and provide a broadband substrate integrated waveguide filter with a multi-mode resonator that can meet the requirements of a miniaturized broadband communication system and adopts a U-shaped slot line.
本实用新型的目的可以通过采取如下技术方案达到:The purpose of this utility model can be achieved by taking the following technical solutions:
一种采用U型槽线的宽带基片集成波导滤波器,包括基片集成波导,所述基片集成波导包括介质基板、设置在介质基板正面和反面的两层金属贴片以及上下两排金属通孔,所述两层金属贴片构成基片集成波导的上下壁,所述上下两排金属通孔依次贯穿介质基板正面的金属贴片、介质基板以及介质基板反面的金属贴片,构成基片集成波导的左右壁,其特征在于:所述介质基板正面的金属贴片上刻蚀有U型槽线,所述刻蚀U型槽线的基片集成波导形成多模谐振器。A broadband substrate-integrated waveguide filter using a U-shaped groove line, including a substrate-integrated waveguide, the substrate-integrated waveguide includes a dielectric substrate, two layers of metal patches arranged on the front and back of the dielectric substrate, and two rows of metal patches up and down. Through holes, the two layers of metal patches constitute the upper and lower walls of the substrate integrated waveguide, and the upper and lower rows of metal through holes sequentially pass through the metal patch on the front of the dielectric substrate, the dielectric substrate and the metal patch on the back of the dielectric substrate, forming a base The left and right walls of the chip integrated waveguide are characterized in that: U-shaped groove lines are etched on the metal patch on the front of the dielectric substrate, and the substrate integrated waveguide etched with U-shaped groove lines forms a multi-mode resonator.
作为一种优选方案,所述U型槽线有一条,该U型槽线设置在介质基板正面的金属贴片中心处。As a preferred solution, there is one U-shaped groove line, and the U-shaped groove line is arranged at the center of the metal patch on the front surface of the dielectric substrate.
作为一种优选方案,所述U型槽线有两条,所述两条U型槽线上下对称构成一个槽线单元,该槽线单元设置在介质基板正面的金属贴片中心处,其中位于上方的U型槽线两边朝下,位于下方的U型槽线两边朝上。As a preferred solution, there are two U-shaped groove lines, and the two U-shaped groove lines form a groove line unit symmetrically up and down, and the groove line unit is arranged at the center of the metal patch on the front side of the dielectric substrate. Both sides of the upper U-shaped groove line face downward, and both sides of the lower U-shaped groove line face upward.
作为一种优选方案,所述槽线单元与上排金属通孔之间还设有第一金属通孔,所述槽线单元与下排金属通孔之间还设有第二金属通孔;所述第一金属通孔与第二金属通孔上下对称,并依次贯穿介质基板正面的金属贴片、介质基板以及介质基板反面的金属贴片。As a preferred solution, a first metal through hole is further provided between the groove line unit and the upper row of metal through holes, and a second metal through hole is further provided between the groove line unit and the lower row of metal through holes; The first metal through hole is vertically symmetrical to the second metal through hole, and sequentially penetrates through the metal patch on the front side of the dielectric substrate, the dielectric substrate, and the metal patch on the back side of the dielectric substrate.
作为一种优选方案,所述U型槽线有四条,每两条U型槽线上下对称构成一个槽线单元,其中位于上方的U型槽线两边朝下,位于下方的U型槽线两边朝上;所述两个槽线单元分别为第一槽线单元和第二槽线单元,所述第一槽线单元和第二槽线单元左右对称设置在介质基板正面的金属贴片上。As a preferred solution, there are four U-shaped groove lines, and every two U-shaped groove lines form a groove line unit symmetrically up and down. Upward; the two slot line units are respectively a first slot line unit and a second slot line unit, and the first slot line unit and the second slot line unit are symmetrically arranged on the metal patch on the front surface of the dielectric substrate.
作为一种优选方案,所述第一槽线单元与上排金属通孔之间还设有第一金属通孔,所述第一槽线单元与下排金属通孔之间还设有第二金属通孔;所述第二槽线单元与上排金属通孔之间还设有第三金属通孔,所述第二槽线单元与下排金属通孔之间还设有第四金属通孔;所述第一金属通孔与第二金属通孔上下对称,所述第三金属通孔与第四金属通孔上下对称,所述第一金属通孔与第三金属通孔左右对称,所述第二金属通孔与第四金属通孔左右对称,所述第一金属通孔、第二金属通孔、第三金属通孔和第四金属通孔依次贯穿介质基板正面的金属贴片、介质基板以及介质基板反面的金属贴片。As a preferred solution, a first metal through hole is further provided between the first groove line unit and the upper row of metal through holes, and a second metal through hole is further provided between the first groove line unit and the lower row of metal through holes. Metal through holes; a third metal through hole is also provided between the second slot line unit and the upper row of metal through holes, and a fourth metal through hole is also provided between the second slot line unit and the lower row of metal through holes holes; the first metal through hole is vertically symmetrical to the second metal through hole, the third metal through hole is vertically symmetrical to the fourth metal through hole, and the first metal through hole is left-right symmetrical to the third metal through hole. The second metal through hole is left-right symmetrical to the fourth metal through hole, and the first metal through hole, the second metal through hole, the third metal through hole and the fourth metal through hole sequentially pass through the metal patch on the front side of the dielectric substrate , the dielectric substrate and the metal patch on the reverse side of the dielectric substrate.
作为一种优选方案,所述上排金属通孔设置在靠近两层金属贴片的上边缘处,所述下排金属通孔设置在靠近两层金属贴片的下边缘处。As a preferred solution, the upper row of metal through holes is arranged close to the upper edges of the two-layer metal patches, and the lower row of metal through holes is arranged close to the lower edges of the two-layer metal patches.
作为一种优选方案,所述介质基板正面的金属贴片左右两端分别设有输出端口和输入端口。As a preferred solution, the left and right ends of the metal patch on the front of the dielectric substrate are respectively provided with an output port and an input port.
本实用新型相对于现有技术具有如下的有益效果:Compared with the prior art, the utility model has the following beneficial effects:
1、本实用新型的宽带基片集成波导滤波器利用刻蚀的U型槽线,使基片集成波导形成多模谐振器,消除了在基片集成波导上面刻蚀周期性EBG结构的复杂性,可以广泛应用于宽带通信系统。1. The broadband substrate-integrated waveguide filter of the present invention uses etched U-shaped groove lines to make the substrate-integrated waveguide form a multi-mode resonator, eliminating the complexity of etching periodic EBG structures on the substrate-integrated waveguide , can be widely used in broadband communication systems.
2、本实用新型的宽带基片集成波导滤波器的体积比起传统介质集成波导体积有很大的优势,比如在同等5阶的滤波器的比较,本实用新型的电路体积小了2.5倍。2. The volume of the broadband substrate integrated waveguide filter of the present invention has a great advantage compared with the volume of the traditional dielectric integrated waveguide. For example, the circuit volume of the present invention is 2.5 times smaller than that of the same 5th-order filter.
3、本实用新型的宽带基片集成波导滤波器具有体积小、制作简单的优点,能够满足小型化宽带通信系统要求,既克服了传统微带宽带滤波器损耗大的缺陷,又解决了利用金属波导造价昂贵的问题,有良好的应用前景。3. The broadband substrate integrated waveguide filter of the present invention has the advantages of small size and simple manufacture, and can meet the requirements of miniaturized broadband communication systems. The cost of waveguide is expensive, and it has a good application prospect.
附图说明Description of drawings
图1a为第一种现有技术的结构示意图。Fig. 1a is a schematic structural diagram of the first prior art.
图1b为第一种现有技术的仿真结果图。Fig. 1b is a simulation result diagram of the first prior art.
图2a为第二种现有技术的结构示意图。Fig. 2a is a schematic structural diagram of the second prior art.
图2b为第二种现有技术的测量和仿真的频率响应结果图。Fig. 2b is a frequency response result diagram of measurement and simulation of the second prior art.
图3a为第三种现有技术的正面结构示意图。Fig. 3a is a schematic front view of the third prior art.
图3b为第三种现有技术的反面结构示意图。Fig. 3b is a schematic view of the reverse structure of the third prior art.
图3c为第三种现有技术的仿真结果图。Fig. 3c is a simulation result diagram of the third prior art.
图4为本实用新型实施例1宽带基片集成波导滤波器的正面结构示意图。Fig. 4 is a schematic diagram of the front structure of the broadband substrate integrated waveguide filter according to Embodiment 1 of the present utility model.
图5为本实用新型实施例1宽带基片集成波导滤波器的模式分布图。Fig. 5 is a mode distribution diagram of a broadband substrate integrated waveguide filter according to Embodiment 1 of the present invention.
图6为本实用新型实施例1宽带基片集成波导滤波器在强耦合和弱耦合情况下的仿真结果图。Fig. 6 is a simulation result diagram of the broadband substrate integrated waveguide filter in the case of strong coupling and weak coupling in Embodiment 1 of the present utility model.
图7为本实用新型实施例2宽带基片集成波导滤波器的正面结构示意图。Fig. 7 is a schematic diagram of the front structure of the broadband substrate integrated waveguide filter according to Embodiment 2 of the present utility model.
图8为本实用新型实施例2宽带基片集成波导滤波器的模式分布图。Fig. 8 is a mode distribution diagram of a wideband substrate integrated waveguide filter according to Embodiment 2 of the present invention.
图9为本实用新型实施例2宽带基片集成波导滤波器在强耦合和弱耦合情况下的仿真结果图。Fig. 9 is a diagram of the simulation results of the broadband substrate integrated waveguide filter in the case of strong coupling and weak coupling according to Embodiment 2 of the present utility model.
图10为本实用新型实施例3宽带基片集成波导滤波器的正面结构示意图。Fig. 10 is a schematic diagram of the front structure of the broadband substrate integrated waveguide filter according to Embodiment 3 of the present invention.
图11为本实用新型实施例3宽带基片集成波导滤波器的仿真结果图。Fig. 11 is a simulation result diagram of the wideband substrate integrated waveguide filter in Embodiment 3 of the present invention.
图12为本实用新型实施例4宽带基片集成波导滤波器的正面结构示意图。Fig. 12 is a schematic diagram of the front structure of the broadband substrate integrated waveguide filter according to Embodiment 4 of the present invention.
图13为本实用新型实施例4宽带基片集成波导滤波器的模式分布图。Fig. 13 is a mode distribution diagram of the wideband substrate integrated waveguide filter in Embodiment 4 of the present invention.
图14为本实用新型实施例4宽带基片集成波导滤波器在强耦合和弱耦合情况下的仿真结果图。Fig. 14 is a diagram of the simulation results of the broadband substrate integrated waveguide filter in the case of strong coupling and weak coupling according to Embodiment 4 of the present utility model.
图15为本实用新型实施例4宽带基片集成波导滤波器的仿真与测量结果曲线图。Fig. 15 is a graph of the simulation and measurement results of the wideband substrate integrated waveguide filter in Embodiment 4 of the present utility model.
图16为本实用新型实施例4宽带基片集成波导滤波器的群延时曲线图。Fig. 16 is a graph of group delay of the wideband substrate integrated waveguide filter in Embodiment 4 of the present invention.
其中,1-介质基板,2-正面的金属贴片,3-上排金属通孔,4-下排金属通孔,5-输出端口,6-输入端口,7-U型槽线,8-第一金属通孔,9-第二金属通孔,10-第一槽线单元,11-第二槽线单元,12-第三金属通孔,13-第四金属通孔。Among them, 1-dielectric substrate, 2-front metal patch, 3-upper row of metal through holes, 4-lower row of metal through holes, 5-output port, 6-input port, 7-U-shaped slot line, 8- The first metal via, 9 - the second metal via, 10 - the first slot line unit, 11 - the second slot line unit, 12 - the third metal via, 13 - the fourth metal via.
具体实施方式Detailed ways
实施例1:Example 1:
如图4所示,本实施例的宽带基片集成波导滤波器包括基片集成波导,所述基片集成波导包括介质基板1、设置在介质基板1正面和反面的两层金属贴片(正面的金属贴片标示2,反面的金属贴片图中未示,实施例2~4相同)以及上下两排金属通孔,所述两层金属贴片构成基片集成波导的上下壁;所述上下两排金属通孔依次贯穿介质基板1正面的金属贴片2、介质基板1以及介质基板1反面的金属贴片,两排金属通孔相当于电壁,构成基片集成波导的左右壁,其中所述上排金属通孔3设置在靠近两层金属贴片2的上边缘处,所述下排金属通孔4设置在靠近两层金属贴片2的下边缘处;所述介质基板1正面的金属贴片2左右两端分别设有输出端口5和输入端口6,中心处刻蚀有一条U型槽线7,刻蚀该U型槽线7的基片集成波导(SIW波导)形成多模谐振器,图中a是用来确定SIW波导的截止频率,h是用来确定零点的位置,分别如下式(1)和(2)所示:As shown in FIG. 4 , the broadband substrate-integrated waveguide filter of this embodiment includes a substrate-integrated waveguide, and the substrate-integrated waveguide includes a dielectric substrate 1 and two layers of metal patches (front and back) arranged on the front and back sides of the dielectric substrate 1. The metal patch on the back is marked 2, the metal patch on the reverse side is not shown in the figure, the same as in Embodiments 2 to 4) and two rows of metal through holes, the two layers of metal patches constitute the upper and lower walls of the substrate integrated waveguide; The upper and lower rows of metal through-holes run through the metal patch 2 on the front of the dielectric substrate 1, the dielectric substrate 1, and the metal patch on the back of the dielectric substrate 1 in sequence. The two rows of metal through-holes are equivalent to electric walls, forming the left and right walls of the substrate integrated waveguide. Wherein the upper row of metal through holes 3 is arranged near the upper edge of the two-layer metal patch 2, and the lower row of metal through-holes 4 is arranged near the lower edge of the two-layer metal patch 2; the dielectric substrate 1 The left and right ends of the front metal patch 2 are respectively provided with an output port 5 and an input port 6, and a U-shaped groove line 7 is etched in the center, and the substrate integrated waveguide (SIW waveguide) that etches the U-shaped groove line 7 forms In the multimode resonator, a in the figure is used to determine the cut-off frequency of the SIW waveguide, and h is used to determine the position of the zero point, as shown in the following equations (1) and (2) respectively:
然后分析本实施例的滤波器的谐振模式分布图,如图5所示,其中f1~f5分别为第一~第五个谐振模式的频率,fz为零点频率。由图5可以看出,第一~第三个谐振模式靠的比较近,这可以形成一个通带,但随着h的增大,零点平移到低于第三个谐振模式的频率,导致带宽变窄;而图6是h=4.5mm时,滤波器分别在强、弱耦合的情况下的仿真结果(|S11|是输入端口的回波损耗,|S21|是输入端口到输出端口的正向传输系数),其中实线是强耦合的仿真结果,虚线是弱耦合的仿真结果,仿真第一~第三个谐振模式形成通带,第四、第五个谐振模式是寄生模式,导致带外变差,需要抑制掉。Then analyze the resonant mode distribution diagram of the filter of this embodiment, as shown in FIG. 5 , where f 1 to f 5 are the frequencies of the first to fifth resonant modes respectively, and f z is the zero point frequency. It can be seen from Figure 5 that the first to third resonance modes are relatively close together, which can form a passband, but as h increases, the zero point shifts to a frequency lower than the third resonance mode, resulting in a bandwidth and Fig. 6 is the simulation results of the filter in the case of strong and weak coupling when h=4.5mm (|S 11 | is the return loss of the input port, |S 21 | is the input port to the output port Forward transmission coefficient), where the solid line is the simulation result of strong coupling, and the dotted line is the simulation result of weak coupling. The first to third resonant modes are simulated to form a passband, and the fourth and fifth resonant modes are spurious modes. It leads to out-of-band deterioration and needs to be suppressed.
实施例2:Example 2:
如图7所示,本实施例的宽带基片集成波导滤波器主要特点是:在实施例1的滤波器结构基础上进行改进,增加一条U型槽线,即所述介质基板1正面的金属贴片2上刻蚀有两条U型槽线7,所述两条U型槽线7上下对称构成一个槽线单元,该槽线单元设置在介质基板1正面的金属贴片2中心处,其中位于上方的U型槽线7两边朝下(即为倒U型),位于下方的U型槽线7两边朝上,刻蚀该槽线单元的基片集成波导同样形成多模谐振器,它的截止频率通过公式(1)求得,而传输零点则通过下式(3)求得:As shown in Figure 7, the main features of the broadband substrate integrated waveguide filter of this embodiment are: improving on the basis of the filter structure of Embodiment 1, adding a U-shaped groove line, that is, the metal on the front side of the dielectric substrate 1 Two U-shaped groove lines 7 are etched on the patch 2, and the two U-shaped groove lines 7 form a groove line unit symmetrically up and down, and the groove line unit is arranged at the center of the metal patch 2 on the front of the dielectric substrate 1, The two sides of the upper U-shaped slot line 7 face down (that is, an inverted U shape), and the two sides of the lower U-shaped slot line 7 face up. The substrate integrated waveguide of the slot line unit is also etched to form a multimode resonator. Its cut-off frequency is obtained by formula (1), and the transmission zero point is obtained by the following formula (3):
本实施例的滤波器的谐振模式分布图,如图8所示,其中f1~f4分别为第一~第四个谐振模式的频率,fz为零点频率。从图8中可以看出,第一~第三个谐振模式可以形成一个通带,在靠近通带只有一个寄生模式,能更容易找到方法去改善带外抑制特性;而图9是h=2.75mm时,滤波器分别在强、弱耦合的情况下的仿真结果,实线是强耦合的仿真结果,虚线是弱耦合的仿真结果,依然能形成一个通带,带外有一个传输零点,靠近通带只有一个寄生模式。The resonant mode distribution diagram of the filter of this embodiment is shown in FIG. 8 , wherein f 1 to f 4 are the frequencies of the first to fourth resonant modes respectively, and f z is the zero point frequency. It can be seen from Figure 8 that the first to third resonance modes can form a passband, and there is only one spurious mode close to the passband, so it is easier to find a way to improve the out-of-band suppression characteristics; and Figure 9 is h=2.75 mm, the simulation results of the filter in the case of strong coupling and weak coupling respectively, the solid line is the simulation result of strong coupling, the dotted line is the simulation result of weak coupling, a passband can still be formed, and there is a transmission zero outside the band, close to There is only one spurious mode in the passband.
实施例3:Example 3:
如图10所示,本实施例的主要特点是:在实施例2的滤波器结构基础上进行改进,增加两个金属通孔,即所述槽线单元与上排金属通孔3之间还设有第一金属通孔8,所述槽线单元与下排金属通孔4之间还设有第二金属通孔9,所述第一金属通孔8与第二金属通孔9上下对称,并依次贯穿介质基板1正面的金属贴片2、介质基板1以及介质基板1反面的金属贴片。如图11所示的仿真结果,带内回波损耗和带外抑制都得到了一定的改善。As shown in Figure 10, the main features of this embodiment are: improving on the filter structure of Embodiment 2, adding two metal through holes, that is, between the slot line unit and the upper row of metal through holes 3 A first metal through hole 8 is provided, and a second metal through hole 9 is also provided between the groove line unit and the lower row of metal through holes 4, and the first metal through hole 8 and the second metal through hole 9 are vertically symmetrical , and pass through the metal patch 2 on the front side of the dielectric substrate 1 , the dielectric substrate 1 , and the metal patch on the back side of the dielectric substrate 1 in sequence. As shown in the simulation results shown in Figure 11, both in-band return loss and out-of-band rejection have been improved to a certain extent.
实施例4:Example 4:
如图12所示,本实施例的主要特点是:由于上述实施例1~3的滤波器的|S21|参数都不是很好(从各个仿真曲线的纵坐标可以看出),因此在实施例3的滤波器结构基础上进行改进,增加两条U型槽线和两个金属通孔,即所述U型槽线7有四条,每两条U型槽线7上下对称构成一个槽线单元,其中位于上方的U型槽线7两边朝下,位于下方的U型槽线7两边朝上;所述两个槽线单元分别为第一槽线单元10和第二槽线单元11,所述第一槽线单元10和第二槽线单元11左右对称设置在金属贴片2上;所述第一槽线单元10与上排金属通孔3之间还设有第一金属通孔8,所述第一槽线单元10与下排金属通孔4之间还设有第二金属通孔9;所述第二槽线单元11与上排金属通孔3之间还设有第三金属通孔12,所述第二槽线单元11与下排金属通孔4之间还设有第四金属通孔13;所述第一金属通孔8与第二金属通孔9上下对称,第三金属通孔12与第四金属通孔13上下对称,所述第一金属通孔8与第三金属通孔12左右对称,所述第二金属通孔9与第四金属通孔13左右对称;所述第一金属通孔8、第二金属通孔9、第三金属通孔12和第四金属通孔13依次贯穿介质基板1正面的金属贴片2、介质基板1以及介质基板1反面的金属贴片;刻蚀第一槽线单元10和第二槽线单元11的基片集成波导同样形成多模谐振器。As shown in Figure 12, the main features of this embodiment are: since the |S21| 3 is improved on the basis of the filter structure, adding two U-shaped slot lines and two metal through holes, that is, there are four U-shaped slot lines 7, and each two U-shaped slot lines 7 form a slot line unit symmetrically up and down , wherein both sides of the upper U-shaped slot line 7 face downward, and the lower U-shaped slot line 7 faces upward; the two slot line units are respectively the first slot line unit 10 and the second slot line unit 11, so The first slot line unit 10 and the second slot line unit 11 are symmetrically arranged on the metal patch 2; a first metal through hole 8 is also provided between the first slot line unit 10 and the upper row of metal through holes 3 A second metal through hole 9 is also provided between the first slot line unit 10 and the lower row of metal through holes 4; a third metal through hole 9 is also provided between the second slot line unit 11 and the upper row of metal through holes 3 A metal through hole 12, a fourth metal through hole 13 is also provided between the second slot line unit 11 and the lower row of metal through holes 4; the first metal through hole 8 and the second metal through hole 9 are vertically symmetrical, The third metal through hole 12 and the fourth metal through hole 13 are vertically symmetrical, the first metal through hole 8 and the third metal through hole 12 are left and right symmetrical, and the second metal through hole 9 and the fourth metal through hole 13 are left and right Symmetry; the first metal through hole 8, the second metal through hole 9, the third metal through hole 12 and the fourth metal through hole 13 pass through the metal patch 2 on the front of the dielectric substrate 1, the dielectric substrate 1 and the dielectric substrate 1 in sequence The metal patch on the reverse side; the substrate integrated waveguide by etching the first slot line unit 10 and the second slot line unit 11 also forms a multimode resonator.
继续用谐振模式分布图来进行分析,如图13所示,其中f1~f5分别为第一~第六个谐振模式的频率,fz为零点频率。从图13中可以看出第一~第五个模式可以形成一个通带,带外有一个传输零点,而靠近通带的寄生模式被传输零点抑制掉,大大地改善带外特性,同时整个滤波器的|S21|参数也变好了;而仿真结果如图14所示,实线是强耦合的仿真结果,虚线是弱耦合的仿真结果,第一~第五个模式形成一个通带,第一个寄生模式被抑制到-30dB以下。Continue to use the resonant mode distribution diagram for analysis, as shown in Figure 13, where f 1 to f 5 are the frequencies of the first to sixth resonant modes respectively, and f z is the zero point frequency. It can be seen from Figure 13 that the first to fifth modes can form a passband, and there is a transmission zero outside the band, while the spurious modes close to the passband are suppressed by the transmission zero, which greatly improves the out-of-band characteristics. The |S21| parameter of the device also becomes better; and the simulation results are shown in Figure 14, the solid line is the simulation result of strong coupling, the dotted line is the simulation result of weak coupling, the first to fifth modes form a passband, the second One spurious mode is suppressed to below -30dB.
为了验证实施例4的滤波器结构的正确性,按下表1的尺寸设计出这个滤波器,它的仿真和测量结果曲线如图15所示,虚线是仿真结果,实线是测量结果,可以看到带内回波损耗的测量结果比仿真结果略微差一些,但都在11dB以下,测量结果与仿真结果具有很好的吻合性;如图16所示,是该滤波器的群延时(指信号波形包络的时延,反映的是一个器件对带内每个频点信号相位的影响),在通带范围内(也就是6.75GHz至10.35GHz)的群延时具有很好的平坦性,它的相对带宽有42%(中心频率8.5GHz)。In order to verify the correctness of the filter structure of Embodiment 4, the filter is designed according to the size of Table 1, and its simulation and measurement result curves are shown in Figure 15. The dotted line is the simulation result, and the solid line is the measurement result, which can be It can be seen that the measurement results of the in-band return loss are slightly worse than the simulation results, but they are all below 11dB, and the measurement results are in good agreement with the simulation results; as shown in Figure 16, it is the group delay of the filter ( Refers to the delay of the signal waveform envelope, which reflects the influence of a device on the signal phase of each frequency point in the band), and the group delay in the passband range (that is, 6.75GHz to 10.35GHz) has a good flatness Its relative bandwidth is 42% (center frequency 8.5GHz).
表1滤波器尺寸Table 1 Filter Dimensions
综上所述,本实用新型的滤波器利用刻蚀的U型槽线,使基片集成波导形成多模谐振器,消除了在基片集成波导上面刻蚀周期性EBG结构的复杂性,同时具有体积小、制作简单的优点,能够满足小型化宽带通信系统要求,既克服了传统微带宽带滤波器损耗大的缺陷,又解决了利用金属波导造价昂贵的问题,有良好的应用前景。In summary, the filter of the present invention utilizes the etched U-shaped groove line to make the substrate integrated waveguide form a multimode resonator, which eliminates the complexity of etching the periodic EBG structure on the substrate integrated waveguide, and at the same time It has the advantages of small size and simple manufacture, and can meet the requirements of miniaturized broadband communication systems. It not only overcomes the defect of large loss in traditional micro-broadband filters, but also solves the problem of expensive metal waveguides, and has a good application prospect.
以上所述,仅为本实用新型专利较佳的实施例,但本实用新型专利的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本实用新型专利所公开的范围内,根据本实用新型专利的技术方案及其实用新型构思加以等同替换或改变,都属于本实用新型专利的保护范围。The above is only a preferred embodiment of the utility model patent, but the scope of protection of the utility model patent is not limited thereto, any skilled person familiar with the technical field within the disclosed scope of the utility model patent, according to The technical scheme of the utility model patent and the equivalent replacement or change of the utility model concept all belong to the protection scope of the utility model patent.
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