CN110380169B - Trapped wave frequency adjustable ultra-wideband filter with improved band elimination characteristic - Google Patents

Trapped wave frequency adjustable ultra-wideband filter with improved band elimination characteristic Download PDF

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CN110380169B
CN110380169B CN201910569737.8A CN201910569737A CN110380169B CN 110380169 B CN110380169 B CN 110380169B CN 201910569737 A CN201910569737 A CN 201910569737A CN 110380169 B CN110380169 B CN 110380169B
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polygonal
ultra
notch
open
input
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CN110380169A (en
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崔杰
包丽平
王禹
王陈浩
盛卫星
韩玉兵
张仁李
马晓峰
郭山红
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Nanjing University of Science and Technology
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/201Filters for transverse electromagnetic waves
    • H01P1/203Strip line filters
    • H01P1/2039Galvanic coupling between Input/Output

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Abstract

The invention discloses a trapped wave frequency adjustable ultra-wideband filter with improved band elimination characteristic, which comprises: an upper signal layer including a dielectric substrate, input/output ports, polygonal transmission units, and short-circuit stubs; the middle metal grounding layer comprises a polygonal defect unit; the bottom signal layer comprises a dielectric substrate, an input/output port, a polygonal transmission unit and two open-circuit branches, wherein one open-circuit branch is arranged in the rectangular defect unit close to the input/output port and is connected with the middle metal grounding layer through an adjustable capacitor; the two transmission units and the defect unit are coaxially arranged. The invention realizes the strong coupling effect of the coupling transmission line by utilizing the polygonal defected ground coupling structure to realize the ultra-wideband, realizes out-of-band harmonic suppression by utilizing the open-circuit branches and the short-circuit branches, realizes the trap characteristic in the bandwidth by utilizing the open-circuit branches at the port, and changes the trap frequency by changing the capacitance value of the capacitor.

Description

Trapped wave frequency adjustable ultra-wideband filter with improved band elimination characteristic
Technical Field
The invention belongs to the technical field of microwave transmission devices, and particularly relates to a trapped wave frequency adjustable ultra-wideband filter with improved band stop characteristics.
Background
With the rapid development of wireless communication technology, people put higher demands on the data transmission rate and security of wireless communication systems. The ultra-wideband technology is produced as a key technology. In 2002, the federal communications commission in the united states agreed to use 3.1GHz to 10.6GHz for commercial use, opening the door to the rapid development of ultra-wideband technology. The ultra-wideband technology has the advantages of low cost, high transmission rate, good safety, low power consumption and the like, and shows huge market value and wide application prospect. As an important component of an ultra-wideband communication system, the performance of an ultra-wideband filter has a great influence on the entire communication system. How to realize a high-performance ultra-wideband filter becomes one of the hot spots of research currently. However, the FCC-specified ultra-wideband frequency band is not exclusive to ultra-wideband communication, and the current narrow-band communication systems, such as the 5.8GHz wlan frequency band, the 8.0GHz satellite communication frequency band, etc., are also within the frequency band covered by the ultra-wideband. Therefore, in order to filter an interference signal in an ultra-wideband frequency band, it is necessary to design an ultra-wideband filter having a notch characteristic, and a specific interference signal is filtered by a notch at a specific frequency in the pass band.
At present, there are many methods for realizing an ultra-wideband filter, mainly including: 1. the ultra-wideband is realized by cascading a high-pass filter and a low-pass filter, but the ultra-wideband is complex in structure, large in volume and not beneficial to integration; 2. based on the short circuit branch loading transmission line structure, the filter has large size and poor selectivity; 3. the structure adopts a multi-mode structure, but the structure has the disadvantages of complex design, high processing difficulty and poor reliability. The current methods for realizing notch in the pass band of the filter mainly include: 1. an asymmetric input/output structure is adopted to generate a zero point, but the structure is only suitable for a parallel coupling structure, harmonic waves are difficult to suppress, and the application is limited; 2. the trap resonator structure is loaded, but the structure is complex and the processing difficulty is high.
Disclosure of Invention
The invention aims to provide the trapped wave frequency adjustable ultra-wideband filter which has the characteristics of simple structure, small size, low insertion loss, high out-of-band rejection, capability of filtering specific interference signals in a pass band and the like.
The technical solution for realizing the purpose of the invention is as follows: a trapped wave frequency-tunable ultra-wideband filter with improved band-stop characteristics comprises an upper signal layer, a middle metal stratum and a bottom signal layer which are sequentially arranged from top to bottom; wherein,
the upper signal layer comprises a first dielectric substrate, a first input/output port, a first polygonal transmission unit and a short-circuit branch knot, the first input/output port is connected with the first polygonal transmission unit through a first uniform microstrip transmission line, and the short-circuit branch knot is loaded on the first uniform microstrip transmission line;
the intermediate metal ground layer comprises a first polygonal defective unit etched thereon;
the bottom signal layer comprises a second dielectric substrate, a second input/output port, a second polygonal transmission unit, a first open-circuit branch knot and a second open-circuit branch knot, the second input/output port is connected with the second polygonal transmission unit through a second uniform microstrip transmission line, the first open-circuit branch knot is loaded on the second uniform microstrip transmission line, a rectangular defect unit is etched at one end, close to the second input/output port, of the second uniform microstrip transmission line, the second open-circuit branch knot is arranged at one end, close to the second input/output port, of the rectangular defect unit, and the second open-circuit branch knot is connected with the middle metal grounding layer through an adjustable capacitor;
the first polygon transmission unit, the first polygon defect unit and the second polygon transmission unit are coaxially arranged.
Compared with the prior art, the invention has the following remarkable advantages: 1) by adopting a polygonal defected ground coupling structure, the strong coupling effect between transmission lines can be easily realized, the relative bandwidth exceeding 140 percent can be realized under the condition of smaller insertion loss, and the center frequency and the bandwidth of a pass band can be controlled; 2) harmonic suppression can be realized by loading short-circuit and open-circuit branches, and the filter has good out-of-band suppression characteristics; 3) a rectangular defect unit structure is etched at a second input/output port, and a second open-circuit branch is arranged at one end, close to the second input/output port, of the second input/output port, so that a trapped wave is formed in a pass band, the current distribution in a filter is changed, a band elimination effect is generated at a certain specific frequency point, and interference signals are filtered; 4) the trap frequency is changed by adjusting the capacitance value of the adjustable capacitor, so that the operation is simple and easy; 5) by adopting the polygonal defected ground coupling structure, the size of the circuit is greatly reduced, so that the ultra-wideband filter has smaller size and is convenient to design and integrate.
The present invention is described in further detail below with reference to the attached drawings.
Drawings
Fig. 1 is a schematic structural diagram of a notch frequency tunable ultra-wideband filter with improved bandstop characteristics according to the present invention.
Fig. 2 is a schematic structural diagram of an upper signal layer of a notch frequency tunable ultra-wideband filter with improved bandstop characteristics according to the present invention.
Fig. 3 is a schematic structural diagram of a middle metal layer of the notch frequency tunable ultra-wideband filter with improved band-stop characteristics according to the present invention.
Fig. 4 is a schematic structural diagram of a bottom signal layer of the notch tunable ultra-wideband filter with improved bandstop characteristics according to the present invention.
Fig. 5 is a frequency response characteristic diagram of an ultra-wideband filter in an embodiment of the invention.
Detailed Description
With reference to fig. 1, the notch frequency tunable ultra-wideband filter with improved band-stop characteristics according to the present invention includes an upper signal layer, a middle metal layer and a bottom signal layer, which are sequentially disposed from top to bottom; wherein,
referring to fig. 2, the upper signal layer includes a first dielectric substrate 1, a first input/output port 5, a first polygonal transmission unit 4, and a short-circuit branch 6, the first input/output port 5 is connected to the first polygonal transmission unit 4 through a first uniform microstrip transmission line 6-1, and the short-circuit branch 6 is loaded on the first uniform microstrip transmission line 6-1.
Referring to fig. 3, the intermediate metal ground layer 2 includes a first polygonal defective cell 7 etched thereon.
Referring to fig. 4, the bottom signal layer includes a second dielectric substrate 3, a second input/output port 9, a second polygonal transmission unit 8, a first open-circuit branch 10 and a second open-circuit branch 11, the second input/output port 9 is connected to the second polygonal transmission unit 8 through a second uniform microstrip transmission line 10-1, the first open-circuit branch 10 is loaded on the second uniform microstrip transmission line 10-1, a rectangular defect unit 11-1 is etched at one end of the second uniform microstrip transmission line 10-1 close to the second input/output port 9, the second open-circuit branch 11 is disposed at one end of the rectangular defect unit 11-1 close to the second input/output port 9, and the second open-circuit branch 11 is connected to the middle metal ground layer 2 through an adjustable capacitor.
The first polygon transfer unit 4, the first polygon defect unit 7, and the second polygon transfer unit 8 are coaxially disposed.
Further preferably, the first polygon transfer unit 4 and the second polygon transfer unit 8 are identical in shape and size; the size of the first polygon defect unit 7 is larger than the size of the two transfer units.
Further, the widths of the first polygon transmission unit 4 and the second polygon transmission unit 8 are adjustable, for adjusting the coupling coefficient of the filter; the length is also adjustable for adjusting the center frequency of the filter.
Exemplarily and preferably, the polygon is an octagon.
Further preferably, the rectangular defective cell 11-1 is centrally disposed along the axis of the second uniform microstrip transmission line 10-1.
Further, the width of rectangular defective cell 11-1 is adjustable for varying the insertion loss size of the notch within the bandwidth.
Further, the sizes of the short-circuit branch section 6 and the first open-circuit branch section 10 are adjustable, and the sizes are used for adjusting harmonic suppression performance.
Furthermore, the capacitance value of the adjustable capacitor is adjustable, and the adjustable capacitor is used for changing the frequency of the bandwidth invagination wave.
Further preferably, the intermediate metal ground layer 2 is made of copper.
Examples
In this embodiment, an electromagnetic simulation software HFSS is used to perform simulation test on the notch frequency adjustable ultra-wideband filter with improved band-stop characteristics, and fig. 5 is a result of simulation calculation of the frequency response characteristics of the filter, where a curve S (2,1) is a transmission characteristic curve of a signal, and a curve S (1,1) is a reflection characteristic curve of a signal port. As can be seen from fig. 5, the 3-dB bandwidth of the ultra-wideband filter in this embodiment is 1GHz to 6GHz, the relative bandwidth exceeds 140%, and the ultra-wideband filter has an ultra-wideband band-pass characteristic. The insertion loss near the central frequency is less than 0.3dB, the in-band return loss is less than-15 dB, the 20dB out-of-band rejection is from 6.4GHz to 8.8GHz, and the high out-of-band rejection effect is achieved. The insertion loss of the trapped wave is more than 40dB, the capacitance value of the capacitor is changed, and the trapped wave frequency point can be seen to move in the passband.
The notch frequency adjustable ultra-wideband filter with the improved band stop characteristic has the advantages of wide bandwidth, good out-of-band suppression effect, capability of suppressing specific interference frequency in a pass band, adjustable notch frequency, simplicity and easiness in operation, and meanwhile, the filter adopts a defected ground coupling structure, so that the size of a circuit is greatly reduced, and the plane structure of a port is convenient to integrate. The filter can be widely applied to various communication networks.

Claims (9)

1. A trapped wave frequency-tunable ultra-wideband filter with improved band-stop characteristics is characterized by comprising an upper signal layer, a middle metal stratum and a bottom signal layer which are sequentially arranged from top to bottom; wherein,
the upper signal layer comprises a first dielectric substrate (1), a first input/output port (5), a first polygonal transmission unit (4) and short-circuit branches (6), the first input/output port (5) is connected with the first polygonal transmission unit (4) through a first uniform microstrip transmission line (6-1), and the short-circuit branches (6) are loaded on the first uniform microstrip transmission line (6-1);
the intermediate metal ground plane (2) comprises a first polygonal defective element (7) etched thereon;
the bottom signal layer comprises a second dielectric substrate (3), a second input/output port (9), a second polygonal transmission unit (8), a first open-circuit branch (10) and a second open-circuit branch (11), the second input/output port (9) is connected with the second polygonal transmission unit (8) through a second uniform microstrip transmission line (10-1), the first open-circuit branch (10) is loaded on the second uniform microstrip transmission line (10-1), etching a rectangular defect unit (11-1) at one end of the second uniform microstrip transmission line (10-1) close to the second input/output port (9), a second open-circuit branch (11) is arranged at one end of the rectangular defect unit (11-1) close to the second input/output port (9), the second open-circuit branch (11) is connected with the middle metal grounding layer (2) through an adjustable capacitor;
the first polygon transmission unit (4), the first polygon defect unit (7) and the second polygon transmission unit (8) are coaxially arranged.
2. The notch-frequency tunable ultra-wideband filter with improved bandstop characteristics according to claim 1, characterized in that the first polygonal transmission element (4) and the second polygonal transmission element (8) are identical in shape and size; the size of the first polygon defect unit (7) is larger than the size of the two transfer units.
3. The notch-frequency tunable ultra-wideband filter with improved band-stop characteristics according to claim 1 or 2, characterized in that the widths of the first polygonal transmission element (4) and the second polygonal transmission element (8) are tunable for adjusting the coupling coefficient of the filter; the length is also adjustable for adjusting the center frequency of the filter.
4. The notch-frequency tunable ultra-wideband filter with improved band-stop characteristics according to claim 1, characterized in that the polygons in the first polygonal transmission element (4), the first polygonal defect element (7) and the second polygonal transmission element (8) are all octagons.
5. The notch frequency tunable ultra-wideband filter with improved bandstop characteristics according to claim 1, characterized in that the rectangular defect element (11-1) is centered along the axis of the second uniform microstrip transmission line (10-1).
6. The notch frequency tunable ultra-wideband filter with improved bandstop characteristics according to claim 1 or 5, characterized in that the width of the rectangular defect unit (11-1) is tunable for varying the insertion loss size of the notch within the bandwidth.
7. The notch-frequency tunable ultra-wideband filter with improved bandstop characteristics according to claim 1, characterized in that the sizes of the short-circuit branch (6) and the first open-circuit branch (10) are adjustable for tuning the harmonic suppression performance.
8. The notch-frequency tunable ultra-wideband filter with improved bandstop characteristics according to claim 1, wherein the capacitance of the tunable capacitor is tunable in magnitude for changing the frequency magnitude of the notch within the bandwidth.
9. The notch frequency tunable ultra-wideband filter with improved bandstop characteristics according to claim 1, characterized in that the intermediate metallic ground layer (2) is made of copper.
CN201910569737.8A 2019-06-27 2019-06-27 Trapped wave frequency adjustable ultra-wideband filter with improved band elimination characteristic Active CN110380169B (en)

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CN111864320A (en) * 2020-07-21 2020-10-30 广东曼克维通信科技有限公司 Filter, signal processing circuit, and antenna
CN112087213A (en) * 2020-08-13 2020-12-15 国网浙江省电力有限公司信息通信分公司 On-chip millimeter wave band-pass filter with MPG element based on unit structure
CN112087211A (en) * 2020-08-13 2020-12-15 国网浙江省电力有限公司信息通信分公司 MPG element-based millimeter wave band-pass filter loaded with resonator on chip
CN112072221A (en) * 2020-08-13 2020-12-11 吉林大学 On-chip millimeter wave band-pass filter with MPG element based on coupled line structure
CN114824703B (en) * 2022-05-25 2023-12-01 安徽华东光电技术研究所有限公司 Dual-passband stop-band filter based on defected ground structure
CN115149230B (en) * 2022-07-27 2023-05-26 大连海事大学 Balance ultra-wideband band-pass filter with harmonic suppression function

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