CN108695580B - A kind of octagonal super wide band microstrip filter based on defect ground structure - Google Patents
A kind of octagonal super wide band microstrip filter based on defect ground structure Download PDFInfo
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- CN108695580B CN108695580B CN201710229369.3A CN201710229369A CN108695580B CN 108695580 B CN108695580 B CN 108695580B CN 201710229369 A CN201710229369 A CN 201710229369A CN 108695580 B CN108695580 B CN 108695580B
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- 230000007547 defect Effects 0.000 title claims abstract description 25
- 230000005540 biological transmission Effects 0.000 claims abstract description 123
- 230000002950 deficient Effects 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000008859 change Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 4
- 230000005764 inhibitory process Effects 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000004891 communication Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 235000008227 Illicium verum Nutrition 0.000 description 1
- 240000007232 Illicium verum Species 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/212—Frequency-selective devices, e.g. filters suppressing or attenuating harmonic frequencies
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Abstract
The invention discloses a kind of octagonal super wide band microstrip filter based on defect ground structure.The ultra-wide band filter includes the upper layer signal layer, intermetallic metal ground plane and bottom layer signal layer being arranged successively, wherein, upper layer signal layer includes dielectric substrate and the first input/output end port, the second input/output end port, the first octagonal transmission unit and the second octagonal transmission unit, intermetallic metal ground plane includes the first octagonal defective unit and the second octagonal defective unit, and bottom layer signal layer includes dielectric substrate, third octagonal transmission unit, the 4th octagonal transmission unit, uniform microstrip transmission line and open stub.Using octagonal defect the close coupling of coupled transmission line acts on the out-of-band harmonics inhibition realized ultra wide band, and utilize open circuit minor matters realization ultra-wide to the present invention, designs simple, easy to process, low in cost.
Description
Technical field
The invention belongs to microwave transmission device technical field, specifically a kind of octagonal ultra wide band based on defect ground structure
Microstrip filter.
Background technique
With the fast development of wireless communication technique, people propose the message transmission rate and confidentiality of wireless communication system
Higher requirement is gone out.Super-broadband tech comes into being as a kind of key technology.2002, Federal Communications Commission was same
3.1GHz to 10.6GHz is used for commercialization by meaning, opens the gate of super-broadband tech fast development.Since super-broadband tech has
At low cost, the advantages that transmission rate is fast, safety is good, small power consumption, super-broadband tech show huge market value and extensively
Application prospect.Important component of the ultra-wide band filter as ultra-wideband communication system, performance have very entire communication system
It is big to influence, how to realize that high performance ultra-wide band filter becomes one of the hot spot studied at present.
The method for realizing ultra-wide band filter has very much, mainly has at present: 1. use high-pass filter and low-pass filter
Ultra wide band is realized in cascade, and but its structure is complex, volume is big, is unfavorable for integrating；2., should based on short-circuit minor matters loaded transmission line structure
Mode filter size is big, poor selectivity；3. using multi-mode structure, but this complex structural designs, difficulty of processing are big, reliability
Difference.
Summary of the invention
The purpose of the present invention is to provide one kind to have the spies such as design simple, small size, low insertion loss, high out-of-side rejection
The octagonal super wide band microstrip filter based on defect ground structure of point.
The technical solution for realizing the aim of the invention is as follows:
A kind of octagonal super wide band microstrip filter based on defect ground structure, including the upper layer being arranged successively from top to bottom
Signals layer, intermetallic metal stratum and bottom layer signal layer, in which:
Upper layer signal layer includes the first octagonal transmission unit and the second octagonal transmission unit, the first input/output terminal
Mouth, the second input/output end port and medium substrate, the first input/output end port are connected with the first octagonal transmission unit, and second
Input/output end port is connected with the second octagonal transmission unit, the first input/output end port and the first octagonal transmission unit with
Second input/output end port and the second octagonal transmission unit are symmetrical set；
Intermetallic metal stratum is provided with the first octagonal defective unit and the second octagonal defective unit, and the first octagonal lacks
It falls into immediately below the first octagonal of unit position transmission unit, under the second octagonal defective unit is located at the second octagonal transmission unit just
Side；
Bottom layer signal layer be provided with third octagonal transmission unit, the 4th octagonal transmission unit, open stub and
Even transmission line, third octagonal transmission unit are located at the underface of the first octagonal defective unit, the 4th octagonal transmission unit
Positioned at the underface of the second octagonal defective unit, third octagonal transmission unit and the 4th octagonal transmission unit pass through uniformly
Transmission line is connected, and open stub is loaded among uniform transmission line.
As a kind of specific example, entire ultra-wide band filter is symmetrical about medial axis, and the medial axis is located at equal
Even center of transmission line position and perpendicular to uniform transmission line.
As a kind of specific example, the first octagonal transmission unit, the second octagonal transmission unit, third are octagonal
Shape transmission unit and the 4th octagonal transmission unit have same shape and size.
As a kind of specific example, the first octagonal defective unit and the second octagonal defective unit are in intermediate gold
The octagonal unit of formation is etched on the layer of possession；Under the first octagonal defective unit is located at the first octagonal transmission unit just
Side, the second octagonal defective unit are located at immediately below the second octagonal transmission unit, third octagonal transmission unit and the four or eight
Angular transmission unit is located at immediately below the first octagonal defective unit and the second octagonal defective unit.
As a kind of specific example, the third octagonal transmission unit and the 4th octagonal transmission unit are by uniformly passing
Defeated line connection, and open stub is located at uniform transmission line middle position.
Further, the first octagonal transmission unit, the second octagonal transmission unit, the transmission of third octagonal are single
Member, the width of the 4th octagonal transmission unit and length can be adjusted, and by changing the width adjusting coefficient of coup, pass through change
The centre frequency of the length adjustment filter.
Further, by changing the size of the open stub, harmonics restraint performance is adjusted.
Compared with prior art, the present invention its remarkable advantage are as follows: (1) using octagonal defect coupled structure, it can be compared with
It easily realizes the close coupling effect between transmission line, 110% relative bandwidth is achieved under lesser insertion loss, and
Passband central frequency and bandwidth are controllable；(2) by load open stub, it can be realized four-time harmonic inhibition, have very well
Out-of-band rejection characteristic；(3) have the advantages that size is smaller, easy to process, low in cost, convenient for design and integrate.
Detailed description of the invention
Fig. 1 is that the present invention is based on the structural schematic diagrams of the octagonal super wide band microstrip filter of defect ground structure.
Fig. 2 is the structural schematic diagram of the octagonal super wide band microstrip filter upper layer signal layer based on defect ground structure.
Fig. 3 is the structural schematic diagram on the octagonal super wide band microstrip filter intermetallic metal stratum based on defect ground structure.
Fig. 4 is the structural schematic diagram of the octagonal super wide band microstrip filter bottom layer signal layer based on defect ground structure.
Fig. 5 is the frequency response chart of the octagonal super wide band microstrip filter based on defect ground structure.
Specific embodiment
Below in conjunction with Fig. 1~4, invention is further described in detail:
The present invention is based on the octagonal super wide band microstrip filters of defect ground structure, upper including what is be arranged successively from top to bottom
Layer signal layer 1, intermetallic metal stratum 2 and bottom layer signal layer 3, in which:
Upper layer signal layer 1 includes the first octagonal transmission unit 5 and the second octagonal transmission unit 6, the first input/output
Port 4, the second input/output end port 7 and medium substrate 8, the first input/output end port 4 and 5 phase of the first octagonal transmission unit
Even, the second input/output end port 7 is connected with the second octagonal transmission unit 6, and the first input/output end port 4 and first is octagonal
Shape transmission unit 5 is symmetrical set with the second input/output end port 7 and the second octagonal transmission unit 6；
Intermetallic metal stratum 2 is provided with the first octagonal defective unit 9 and the second octagonal defective unit 10, and first is octagonal
Immediately below 9 the first octagonal transmission units of shape defective unit 5, the second octagonal defective unit 10 is located at the transmission of the second octagonal
Immediately below unit 6；
Bottom layer signal layer 3 is provided with third octagonal transmission unit 11, the 4th octagonal transmission unit 14, open stub
13 and uniform transmission line 12, third octagonal transmission unit 11 is located at the underface of the first octagonal defective unit 9, and the 4th is octagonal
Shape transmission unit 14 is located at the underface of the second octagonal defective unit 10, third octagonal transmission unit 11 and the 4th illiciumverum
Shape transmission unit 14 is connected by uniform transmission line 12, and open stub 13 is loaded among uniform transmission line 12.
As a kind of specific example, entire ultra-wide band filter is symmetrical about medial axis, and the medial axis is located at equal
Even 12 center of transmission line and perpendicular to uniform transmission line 12.
As a kind of specific example, the first octagonal transmission unit 5, the second octagonal transmission unit the 6, the 3rd 8
Angular transmission unit 11 and the 4th octagonal transmission unit 14 have same shape and size.
As a kind of specific example, the first octagonal defective unit 9 and the second octagonal defective unit 10 are in
Between the octagonal unit of formation is etched in metal ground layer 2；It is single that the first octagonal defective unit 9 is located at the transmission of the first octagonal
Immediately below member 5, the second octagonal defective unit 10 is located at immediately below the second octagonal transmission unit 6, and the transmission of third octagonal is single
Member 11 and the 4th octagonal transmission unit 14 are being located at the first octagonal defective unit 9 and the second octagonal defective unit 10 just
Lower section.
As a kind of specific example, the third octagonal transmission unit 11 and the 4th octagonal transmission unit 14 pass through
Even transmission line 12 connects, and open stub 13 is located at 12 middle position of uniform transmission line.
Further, the first octagonal transmission unit 5, the second octagonal transmission unit 6, the transmission of third octagonal are single
The width and length of first 11, the 4th octagonal transmission unit 14 can be adjusted, and by changing the width adjusting coefficient of coup, be passed through
Change the centre frequency of the length adjustment filter.
Further, by changing the size of the open stub 13, harmonics restraint performance is adjusted.
Embodiment 1
Shown in Fig. 1, the octagonal super wide band microstrip filter based on defect ground structure in the present embodiment include on to
Under the upper layer signal layer 1, intermetallic metal stratum 2, the bottom layer signal layer 3 that are arranged successively.As shown in Fig. 2, upper layer signal layer 1 includes
Medium substrate 8, the first input/output end port 4, the second input/output end port 7, the first octagonal transmission unit 5, second are octagonal
Shape transmission unit 6, the first input/output end port 4 are connected with the first octagonal transmission unit 5, the second input/output end port 7 with
Second octagonal transmission unit 6 is connected, the first input/output end port 4 and the first octagonal transmission unit 5 with second input/it is defeated
Exit port 7 and the second octagonal transmission unit 6 are symmetrical set, and medium substrate 8 is the RO4350B that dielectric constant is 3.66,
With a thickness of 0.254mm.As shown in figure 3, intermetallic metal stratum includes the first octagonal defective unit 9 and the second octagonal defect report
Member 10,5 underface of the first the first octagonal transmission unit of octagonal defective unit 9, the second octagonal defective unit 10 are located at
Immediately below second octagonal transmission unit 6.As shown in figure 3, bottom layer signal layer includes third octagonal transmission unit 11, uniformly passes
Defeated line 12, open stub 13, the 4th octagonal transmission unit 14 and medium substrate 15, medium substrate 15 are for dielectric constant
3.66 RO4350B, with a thickness of 0.254mm, third octagonal transmission unit 11 be located at the first octagonal defective unit 9 just under
Side, the 4th octagonal transmission unit 14 are located at the underface of the second octagonal defective unit 10, third octagonal transmission unit 11
It is connected with the 4th octagonal transmission unit 14 by uniform transmission line 12, open stub 13 is loaded among uniform transmission line 12.
The the first octagonal defective unit 9 and the second octagonal defective unit 10 used in the present embodiment is in metallic ground
The octagonal structure etched on plate, microband paste and intermetallic metal stratum on medium substrate are all made of copper product.
Using electromagnetic simulation software HFSS, to the novel octagonal shape defect ultra-wide band filter carries out simulation calculation, Fig. 5
For the result of the simulation calculation of the filter freguency response characteristic, wherein curve S21It is the transfer curve of signal, curve
S11It is the characteristic curve of signal port reflection.As seen from the figure, the 3-dB bandwidth of the ultra-wide band filter in the present embodiment from
3.4GHz to 12.3GHz, relative bandwidth 113% have ultra wide band bandpass characteristics.Nearby insertion loss is less than centre frequency
0.4dB is less than -12dB with interior return loss, and 20dB Out-of-band rejection has and presses down outside very high band from 14.5GHz to 35GHz
Effect processed.It is less than 0.42ns with interior group delay, illustrating the filter not only has good ultra wide band characteristic but also the linearity is good.
To sum up, novel octagonal shape defect ground structure ultra-wide band filter provided by the invention has with wide, the small, band of loss
The advantage that outer inhibitory effect is good and the linearity is high, while the filter using defect coupled structure, substantially reduce circuit
Size, the planar structure of port, which also facilitates, to be integrated, which can be widely used in all kinds of communication networks.
Claims (6)
1. a kind of octagonal super wide band microstrip filter based on defect ground structure, which is characterized in that including from top to bottom successively
Upper layer signal layer (1), intermetallic metal stratum (2) and the bottom layer signal layer (3) of arrangement, in which:
Upper layer signal layer (1) includes the first octagonal transmission unit (5) and the second octagonal transmission unit (6), the first input/defeated
Exit port (4), the second input/output end port (7) and medium substrate (8), the first input/output end port (4) and the first octagonal
Transmission unit (5) is connected, and the second input/output end port (7) is connected with the second octagonal transmission unit (6), the first input/output
Port (4) and the first octagonal transmission unit (5) and the second input/output end port (7) and the second octagonal transmission unit (6) are left
The right side is symmetrical arranged；
Intermetallic metal stratum (2) is provided with the first octagonal defective unit (9) and the second octagonal defective unit (10), and the one or eight
Immediately below angular defective unit (9) position the first octagonal transmission unit (5), the second octagonal defective unit (10) is located at the two or eight
Immediately below angular transmission unit (6)；
Bottom layer signal layer (3) is provided with third octagonal transmission unit (11), the 4th octagonal transmission unit (14), open circuit cutting back
Line (13) and uniform transmission line (12), third octagonal transmission unit (11) be located at the first octagonal defective unit (9) just under
Side, the 4th octagonal transmission unit (14) are located at the underface of the second octagonal defective unit (10), and the transmission of third octagonal is single
First (11) are connected with the 4th octagonal transmission unit (14) by uniform transmission line (12), and load is opened among uniform transmission line (12)
Short out transversal (13).
2. the octagonal super wide band microstrip filter according to claim 1 based on defect ground structure, which is characterized in that whole
A ultra-wide band filter is symmetrical about medial axis, the medial axis be located at uniform transmission line (12) center and perpendicular to
Uniform transmission line (12).
3. the octagonal super wide band microstrip filter according to claim 1 based on defect ground structure, which is characterized in that institute
The first octagonal transmission unit (5), the second octagonal transmission unit (6), third octagonal transmission unit (11) and the 4th stated
Octagonal transmission unit (14) has same shape and size.
4. the octagonal super wide band microstrip filter according to claim 1 based on defect ground structure, which is characterized in that institute
It states the first octagonal defective unit (9) and the second octagonal defective unit (10) is to etch to be formed on intermetallic metal stratum (2)
Octagonal unit.
5. the octagonal super wide band microstrip filter according to claim 1 or 3 based on defect ground structure, feature exist
In the first octagonal transmission unit (5), the second octagonal transmission unit (6), third octagonal transmission unit (11),
The width and length of four octagonal transmission units (14) can be adjusted, and by changing the width adjusting coefficient of coup, pass through change
The centre frequency of the length adjustment filter.
6. the octagonal super wide band microstrip filter according to claim 1 based on defect ground structure, which is characterized in that logical
The size for changing the open stub (13) is crossed, harmonics restraint performance is adjusted.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710229369.3A CN108695580B (en) | 2017-04-10 | 2017-04-10 | A kind of octagonal super wide band microstrip filter based on defect ground structure |
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| CN201710229369.3A CN108695580B (en) | 2017-04-10 | 2017-04-10 | A kind of octagonal super wide band microstrip filter based on defect ground structure |
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| CN108695580B true CN108695580B (en) | 2019-10-18 |
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| CN110380169B (en) * | 2019-06-27 | 2020-11-13 | 南京理工大学 | Trapped wave frequency adjustable ultra-wideband filter with improved band elimination characteristic |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1220031A (en) * | 1996-05-22 | 1999-06-16 | 纳幕尔杜邦公司 | Resonators for high power high temp. superconducting devices |
| CN202495563U (en) * | 2011-12-26 | 2012-10-17 | 中国电子科技集团公司第二十六研究所 | Microstrip delay line based on defected ground structure |
-
2017
- 2017-04-10 CN CN201710229369.3A patent/CN108695580B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1220031A (en) * | 1996-05-22 | 1999-06-16 | 纳幕尔杜邦公司 | Resonators for high power high temp. superconducting devices |
| CN202495563U (en) * | 2011-12-26 | 2012-10-17 | 中国电子科技集团公司第二十六研究所 | Microstrip delay line based on defected ground structure |
Non-Patent Citations (2)
| Title |
|---|
| A new diamond-shape planar ultra-wideband bandpass filter with super wide stopband;Maoxu Wang et al;《2017 IEEE International Symposium on Antennas and Propagation & USNC/URSI National Radio Science Meeting》;20170714;全文 * |
| 基于耦合结构的宽带滤波器与功分器研究;王茂旭;《中国优秀硕士学位论文全文数据库》;20171201;全文 * |
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