CN104538499B - 太阳能薄膜材料铜锌锡硫粉体的制备方法 - Google Patents

太阳能薄膜材料铜锌锡硫粉体的制备方法 Download PDF

Info

Publication number
CN104538499B
CN104538499B CN201410841417.0A CN201410841417A CN104538499B CN 104538499 B CN104538499 B CN 104538499B CN 201410841417 A CN201410841417 A CN 201410841417A CN 104538499 B CN104538499 B CN 104538499B
Authority
CN
China
Prior art keywords
zinc
sulfur
copper
tin
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410841417.0A
Other languages
English (en)
Other versions
CN104538499A (zh
Inventor
任改梅
李春芳
戴长欣
吴尔京
沈季芳
戴嘉超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHANGSHA HUAJING POWDERY MATERIAL TECHNOLOGICAL Co Ltd
Original Assignee
CHANGSHA HUAJING POWDERY MATERIAL TECHNOLOGICAL Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHANGSHA HUAJING POWDERY MATERIAL TECHNOLOGICAL Co Ltd filed Critical CHANGSHA HUAJING POWDERY MATERIAL TECHNOLOGICAL Co Ltd
Priority to CN201410841417.0A priority Critical patent/CN104538499B/zh
Publication of CN104538499A publication Critical patent/CN104538499A/zh
Application granted granted Critical
Publication of CN104538499B publication Critical patent/CN104538499B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/032Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0326Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

一种制备太阳能薄膜用铜锌锡硫粉体的方法,本发明的原料为铜粉、硫化锌、氧化锡、硫磺,它们的依次摩尔比例为2:1:1:4.5‑5,将它们用湿法分别进行前处理后混合一起再进行超声波搅拌,充分搅拌均匀后抽滤干燥后得到混合均匀的混合粉末,在氩气保护下,在温度为230 oC ~950 oC之间将该混合粉末进行高温烧结反应。将反应完成后的产品冷却后进行粉碎球磨,得到所需铜锌锡硫粉体材料。本发明不仅工艺流程简单,低碳环保,设备要求低,产品成本低,制备十分方便容易,而且提高了产品质量,可规模化生产,解决了一般硫化法制备的CZTS太阳能薄膜中,S 的分布不均匀,存在梯度,即靠近钼(Mo)层处S 含量低的问题。

Description

太阳能薄膜材料铜锌锡硫粉体的制备方法
技术领域
太阳能薄膜材料铜锌锡硫粉体的制备方法,属于太阳能光伏电池材料。
背景技术
太阳能光伏电池是一种将光能转换为电能的器件。一直以来,太阳能光伏器件是使用昂贵的硅(Si) 作为吸光半导体材料进行制作,器件价格非常昂贵。为了让太阳能光伏电池能被广泛接受,就必须做到价格低廉,经济实用。所以世界各国都在开发新型太阳能电池,使用价格低廉的薄膜及吸光半导体材料,比如铜- 铟- 镓-硒薄膜,简称为CIGS;以及铜- 锌- 锡-硫薄膜,简称为CZTS (Cu2ZnSnS4)。CIGS 在薄膜太阳能电池中已开始进行大量生产,但是其中的铟和硒有毒性,而且是稀有资源,价格昂贵。造成CIGS 在商业应用推广中障碍重重。目前最有前景的可替代物是由铜锌锡硫元素构成的四元化合物,它是用锌元素和锡元素代替了铜铟镓硒中的铟元素和镓元素,它具有约1.5eV 的直接能带隙和大于104cm-1 的吸光系数。并且,CZTS 不包括任何稀有金属元素,价格低廉,原料也十分容易获得,制备工艺流程环保,应用前景十分广阔。CZTS薄膜太阳电池由背电极Mo,吸收层CZTS,缓冲层CdS,窗口层i-ZnO和ZAO以及顶电极组成。
目前, CZTS 薄膜所需铜锌锡硫粉体材料制备的主要方法有磁控溅射法、脉冲激光沉积法、沉积金属前驱体再经硫化和溶剂热法。这些方法工艺复杂,各元素成分难以精确控制,而且制备工艺中往往需使用有毒的硫化氢气体,制备成本高。因此,研发新的可规模化生产,工艺简单,成本低廉又环保的铜锌锡硫粉末材料制备方法是十分必要的。
发明内容
本发明的目的是针对光伏太阳能薄膜电池而制备的铜锌锡硫粉体材料,提供一种新的制备方法。原料为铜粉、硫化锌、氧化锡、硫磺,它们的依次摩尔比例为2:1:1:4-5,将它们充分混合后,放入无水乙醇进行超声波搅拌,再进行造粒烘干,在氩气保护下,在温度为350 oC ~1100 oC之间进行分阶段烧结反应。将反应完成后的产品冷却后进行粉碎球磨,得到所需铜锌锡硫粉体材料。具体制备工艺如下:
A:配料
原料为铜粉、硫化锌、氧化锡、硫磺,它们的依次摩尔比例为2:1:1:4-5,
B:前处理
铜粉、硫化锌、氧化锡、硫磺分别进行过筛除杂。
C:混料
铜粉、硫化锌、氧化锡、硫磺,在空气气氛下或惰性气体气氛下机械搅拌30 ~100 分钟,进行充分混合。
D:造粒
在充分混合好的混合物中加入由聚乙烯醇缩丁醛和无水乙醇配制的助剂溶液,该助剂溶液的浓度在1%-6%之间,用超声波进行充分搅拌20 ~60 分钟,送入造粒机中进行造粒。
E:烘干
将造好粒的混合物放入烘干机中在氩气保护下进行烘干,温度在60 oC ~100 oC之间。
F:反应炉反应
装舟,进炉,进行氩气保护,在氩气保护下加热至350 oC ~1100 oC之间进行高温烧结,烧结温度分低中高三个温度区,低温区350~480℃,中温区500~880℃,高温区900~1100℃,反应后保温3 ~ 10小时。
G: 磨料
将冷却后的反应物进行粉碎磨料,直到粒径小于100微米。
H: 振动筛分级
将磨料好的产品按粒径大小进行振动筛分得到不同粒级的铜锌锡硫粉体材料。
本发明方法不仅工艺流程简单,低碳环保,设备要求低,产品成本低,制备十分方便容易,而且提高了产品质量,可规模化生产,解决了一般硫化法制备的CZTS太阳能薄膜中,S 的分布不均匀,存在梯度 ,即靠近钼(Mo)层处S 含量低的问题,同时使产品粒度更均匀,性能更稳定可靠,生产效率更高。所生产的铜锌锡硫粉体材料完全可以满足光伏太阳能薄膜电池的需要,同时也可以制备成各种规格的靶材和块材。产品特别适合于大规模工业自动化生产,应用前景十分广阔。
具体实施方式
实施例1
将铜粉、硫化锌、氧化锡、硫磺按摩尔比2∶ 1 ∶ 1 ∶ 4.2 充分混合均匀,加入浓度为1%的聚乙烯醇缩丁醛和无水乙醇配制的助剂溶液,超声波搅拌,造粒,在氩气保护下送入烘干箱中烘干。然后将烘干好的混合物再放入反应炉中,通入氩气,烧结低温区为400℃,中温区500℃,高温区1100℃,分别烧结1小时,2小时和2小时,保温3小时,等所得样品冷却后,取出研磨直到粒径小于100微米,振动筛分级后得到不同粒级的得到铜锌锡硫粉体材料。
实施例2
将铜粉、硫化锌、氧化锡、硫磺按摩尔比2∶ 1 ∶ 1 ∶ 4.5充分混合均匀,加入浓度为3%的聚乙烯醇缩丁醛和无水乙醇配制的助剂溶液,超声波搅拌,造粒,在氩气保护下送入烘干箱中烘干。然后将烘干好的混合物再放入反应炉中,通入氩气,烧结低温区为350℃,中温区850℃,高温区1000℃,分别烧结1小时,2小时和3小时,保温6小时,等所得样品冷却后,取出研磨直到粒径小于100微米,振动筛分级后得到不同粒级的铜锌锡硫粉体材料。
实施例3
将铜粉、硫化锌、氧化锡、硫磺按摩尔比2∶ 1 ∶ 1 ∶ 5充分混合均匀,加入浓度为5%的聚乙烯醇缩丁醛和无水乙醇配制的助剂溶液,超声波搅拌,造粒,在氩气保护下送入烘干箱中烘干。然后将烘干好的混合物再放入反应炉中,通入氮气,烧结低温区为450℃,中温区700℃,高温区1050℃,分别烧结1小时,1.5小时和2.5小时后保温8 小时,等所得样品冷却后,取出研磨直到粒径小于100微米,振动筛分级后得到不同粒级的得到铜锌锡硫粉体材料。

Claims (2)

1.太阳能薄膜材料铜锌锡硫粉体的制备方法,其特征在于包括以下步骤:
A:配料
按铜粉、硫化锌、氧化锡和硫磺的摩尔比为2:1:1:4-5进行配料;
B:前处理
铜粉、硫化锌、氧化锡、硫磺分别进行过筛除杂;
C:混料
铜粉、硫化锌、氧化锡、硫磺,在空气气氛下或惰性气体气氛下机械搅拌30 ~100 分钟,进行充分混合;
D:造粒
在充分混合好的混合物中加入由聚乙烯醇缩丁醛和无水乙醇配制的助剂溶液,该助剂溶液的浓度在1%-6%之间,用超声波进行充分搅拌20 ~60 分钟,送入造粒机中进行造粒;
E:烘干
将造好粒的混合物放入烘干机中在氩气保护下进行烘干,温度在60 oC ~100 oC之间;
F:反应炉反应
将烘干好的物料装舟,送进反应炉,在氩气保护下加热至350 oC ~1100 oC之间进行高温烧结,烧结分低中高三个温度区,低温区350~480℃,中温区500~880℃,高温区900~1100℃,反应后保温3 ~ 10小时;
G: 磨料
将冷却后的反应物进行粉碎磨料,直到粒径小于100微米;
H: 振动筛分级
将磨料好的产品按粒径大小进行振动筛分得到不同粒级的铜锌锡硫粉体材料。
2.如权利要求1所述的太阳能薄膜材料铜锌锡硫粉体的制备方法,其特征在于:C步骤所述的惰性气体气氛为氩气。
CN201410841417.0A 2014-12-30 2014-12-30 太阳能薄膜材料铜锌锡硫粉体的制备方法 Active CN104538499B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410841417.0A CN104538499B (zh) 2014-12-30 2014-12-30 太阳能薄膜材料铜锌锡硫粉体的制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410841417.0A CN104538499B (zh) 2014-12-30 2014-12-30 太阳能薄膜材料铜锌锡硫粉体的制备方法

Publications (2)

Publication Number Publication Date
CN104538499A CN104538499A (zh) 2015-04-22
CN104538499B true CN104538499B (zh) 2016-09-14

Family

ID=52853998

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410841417.0A Active CN104538499B (zh) 2014-12-30 2014-12-30 太阳能薄膜材料铜锌锡硫粉体的制备方法

Country Status (1)

Country Link
CN (1) CN104538499B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107385402A (zh) * 2017-07-31 2017-11-24 华北理工大学 一种铜锌锡硫薄膜的制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101794826A (zh) * 2010-02-05 2010-08-04 合肥工业大学 铜锌锡硫四元化合物及其构成的薄膜太阳电池及制备方法
CN102689920A (zh) * 2012-06-20 2012-09-26 上海大学 一种溶剂热合成铜锌锡硫材料的方法
CN103373741A (zh) * 2012-04-13 2013-10-30 河南师范大学 一种制备铜锌锡硫粉体的方法
CN104241447A (zh) * 2014-09-09 2014-12-24 电子科技大学 一种铜锌锡硫薄膜材料的制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101794826A (zh) * 2010-02-05 2010-08-04 合肥工业大学 铜锌锡硫四元化合物及其构成的薄膜太阳电池及制备方法
CN103373741A (zh) * 2012-04-13 2013-10-30 河南师范大学 一种制备铜锌锡硫粉体的方法
CN102689920A (zh) * 2012-06-20 2012-09-26 上海大学 一种溶剂热合成铜锌锡硫材料的方法
CN104241447A (zh) * 2014-09-09 2014-12-24 电子科技大学 一种铜锌锡硫薄膜材料的制备方法

Also Published As

Publication number Publication date
CN104538499A (zh) 2015-04-22

Similar Documents

Publication Publication Date Title
CN101885071B (zh) 一种铜锌锡硒纳米粉末材料的制备方法
CN101333645B (zh) 一种制备铜铟硒溅射靶材的工艺
CN103594561B (zh) 氧化物薄膜硫化硒化法制备铜锌锡硫硒太阳电池吸收层的方法
CN104241447B (zh) 一种铜锌锡硫薄膜材料的制备方法
CN103482687B (zh) 一种铜锌锡硫纳米颗粒材料的制备方法
US8815123B2 (en) Fabrication method for ibiiiavia-group amorphous compound and ibiiiavia-group amorphous precursor for thin-film solar cells
CN101958369A (zh) 一种铜铟镓硒薄膜材料的制备方法
CN105161555B (zh) 一种单晶颗粒薄膜及其无衬底柔性太阳能电池的制备方法
CN102199751B (zh) 铜铟镓硒靶材的制作方法
CN102543258B (zh) 含磷环保无毒多晶硅太阳能电池背电场浆料及其制备方法
CN103602982A (zh) 铜铟镓硫硒薄膜太阳电池光吸收层的非真空制备方法
CN104538499B (zh) 太阳能薄膜材料铜锌锡硫粉体的制备方法
CN107134507B (zh) 具有梯度成分太阳能电池吸收层铜铟硫硒薄膜的制备方法
CN102569439B (zh) 环保无毒晶体硅太阳能电池背电场浆料及其制备方法
CN108002838B (zh) 高导电性硫化镉靶材及其制备方法
CN105821376A (zh) 一种铜锌锡硫靶材的制备方法
CN105197985A (zh) 溶剂热法一步合成超长纤锌矿结构Cu2ZnSnS4纳米棒的制备方法
CN105742385B (zh) 一种铜铁锌锡硫微米单晶颗粒及其制备方法和在制备太阳能电池方面的应用
CN103896326A (zh) 一种铜锌锡硫半导体材料的制备方法
CN105070788B (zh) 一种柔性衬底单晶颗粒薄膜太阳能电池的制备方法
CN103626495A (zh) 一种铜铟镓硒靶材的无压烧结制备方法
CN104477974B (zh) 一种制备太阳能薄膜用铜锌锡硫粉体的方法
CN103606573A (zh) 一种黄铜矿结构的中间带吸收材料及其制备方法
CN110212042B (zh) 一种Cu3Sb(S,Se)4薄膜及其制备方法、应用
CN103373741A (zh) 一种制备铜锌锡硫粉体的方法

Legal Events

Date Code Title Description
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant