CN104538498B - 一种晶硅电池及其制作方法 - Google Patents
一种晶硅电池及其制作方法 Download PDFInfo
- Publication number
- CN104538498B CN104538498B CN201410839687.8A CN201410839687A CN104538498B CN 104538498 B CN104538498 B CN 104538498B CN 201410839687 A CN201410839687 A CN 201410839687A CN 104538498 B CN104538498 B CN 104538498B
- Authority
- CN
- China
- Prior art keywords
- edge
- crystal
- silicon
- silicon nitride
- silicon battery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 52
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 42
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims abstract description 5
- 238000012360 testing method Methods 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 60
- 239000010703 silicon Substances 0.000 claims description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 239000013078 crystal Substances 0.000 claims description 43
- 239000010410 layer Substances 0.000 claims description 40
- 239000004744 fabric Substances 0.000 claims description 12
- 239000000428 dust Substances 0.000 claims description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims description 8
- 238000003631 wet chemical etching Methods 0.000 claims description 7
- 235000008216 herbs Nutrition 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- 241000222065 Lycoperdon Species 0.000 claims description 5
- 241000768494 Polymorphum Species 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910003978 SiClx Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 238000005260 corrosion Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 238000007704 wet chemistry method Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 230000009466 transformation Effects 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
本发明提供了一种晶硅电池及其制作方法，包括如下步骤：制绒、扩散制结、刻边、去磷硅玻璃、淀积氮化硅减反射层、印刷电极、烧结及测试分选，在上述步骤中引入二次刻边工艺，去除晶硅电池片边缘的氮化硅层，提升晶硅电池的并联电阻，从而改进了晶硅电池的光电转换效率。另外，上述二次刻边工艺可选择在淀积氮化硅减反射层工艺后引入，去除电池边缘的氮化硅层；或者在烧结工艺后引入去除电池边缘的氮化硅层。本发明方法简单，易操作，且不受其它工艺步骤限制。
Description
技术领域
本发明涉及一种晶硅电池及其制作方法，属于太阳能电池技术领域。
背景技术
如何提升晶体硅太阳电池的光电转换效率是光伏领域的一个重要研究课题。依据晶硅太阳电池的等效电路模型，其光电转换效率取决于器件的反向饱和电流、理想因子、串联电阻和并联电阻。其中，并联电阻越大越有利于器件的光电转换。而较小的并联电阻将使得器件填充因子及开路电压降低，这将导致器件光电转换能力下降。
晶硅太阳电池的并联电阻取决于其整个制备工艺过程。通常，晶硅电池制备流程中包括制绒、扩散制结、刻边、去磷硅玻璃、淀积氮化硅减反射层、印刷电极、烧结及测试分选等工艺。例如专利申请号201010621325.3公开了一种高效太阳能电池的制造工艺，包括的步骤有：硅片表面制构( 制绒) →扩散→去PSG，刻边→表面钝化减反射层→表面掩膜及图形刻蚀→丝网印刷背电极，背电场→背面烧结→电镀正电极。其中，淀积氮化硅减反射层工艺多采用PECVD工艺，其目的是在制备晶硅电池表面制备氮化硅层，钝化晶硅电池前表面及减少太阳光在晶硅电池前表面反射。在PECVD工艺制备氮化硅减反射层时，硅片的侧边暴露在硅烷和氨气的混合反应气体中，分解的硅氮氢等离子在电场的作用下将部分迁移至使得硅片边缘处，化学气相淀积形成氮化硅层。该氮化硅层将连接硅片上的PN结，能够作为晶硅电池漏电的通道，降低其并联电阻。特别是为了更好地使氮化硅层实现钝化和减反射双重功能，通常采用双层或多层氮化硅，底层的氮化硅多层的硅含量较大，其传导电荷的能力大大加强，这将导致器件具有较低的并联电阻，不利于晶硅太阳电池的光电转换效率。
发明内容
针对该问题，本发明提供了一种晶硅电池及其制作方法，通过在晶硅电池制备流程中引入二次刻边工艺，去除了晶硅电池片边缘的氮化硅层，提升了晶硅电池的并联电阻，从而改进晶硅电池的光电转换效率。
为了达到上述目的，本发明采用如下技术方案：一种晶硅电池，上端设有梳状顶银电极,下端设有背铝电极，电池片包括从上到下的氮化硅减反射层、N型晶硅和P型晶硅，氮化硅减反射层设置在N型晶硅的上表面。
一种晶硅电池的制作方法，包括如下步骤：制绒、扩散制结、刻边、去磷硅玻璃、淀积氮化硅减反射层、印刷电极、烧结及测试分选，在上述步骤中引入二次刻边工艺，去除晶硅电池片边缘的氮化硅层，提升晶硅电池的并联电阻。
作为进一步的优选，所述二次刻边工艺在淀积氮化硅减反射层工艺后引入，去除电池边缘的氮化硅层。
作为进一步的优选，所述二次刻边工艺在烧结工艺后引入去除电池边缘的氮化硅层。
作为进一步的优选，所述二次刻边工艺采用湿法化学腐蚀去除晶硅电池片边缘的氮化硅层。
作为进一步的优选，所述湿法化学腐蚀的步骤如下：将无尘布用氢氟酸溶液润湿，随后将晶硅电池片的边缘放置在无尘布上，至晶硅电池边缘处的颜色由蓝色变为亮灰色，氮化硅层即被去掉。
作为进一步的优选，所述湿法化学腐蚀的步骤如下：将无尘布用硝酸和氢氟酸混合物溶液中润湿，其中，硝酸与氢氟酸的体积比例为5：1-2：1，随后将晶硅电池片的边缘放置在无尘布上，至晶硅电池边缘处的颜色由蓝色变为亮灰色，氮化硅层即被去掉。
作为进一步的优选，所述氢氟酸的浓度为5-10%。
作为进一步的优选，所述硝酸为浓度为65-68%的市售分析纯硝酸。
作为进一步的优选，所述二次刻边工艺采用干法等离子腐蚀去除晶硅电池片边缘的氮化硅层。
作为进一步的优选，所述晶硅电池边缘的氮化硅层可以为单层，也可为双层或多层。
本发明的有益效果是：本发明在制作电池过程中引入二次刻边工艺，方法简单，易操作，且不受其它工艺步骤限制；经过二次刻边工艺后，晶硅电池边缘处的氮化硅层的将被去掉，使得并联电阻提升，从而光电转换效率改善。
附图说明
图1为现有技术边缘含有氮化硅层的晶硅电池的示意性结构图。
图2为经过二次刻边工艺后晶硅电池的示意性结构图。
图中：1—梳状顶银电极，2—氮化硅减反射层，3—N型晶硅，4—P型晶硅，5—背铝电极。
具体实施方式
本发明目的的实现、功能特点及有益效果，下面将结合具体实施例以及附图做进一步的说明。
下面结合附图和具体实施例对本发明所述技术方案作进一步的详细描述，以使本领域的技术人员可以更好的理解本发明并能予以实施，但所举实施例不作为对本发明的限定。
如图1和2所示，经过二次刻边工艺后，氮化硅减反射层只设置在N型晶硅的上表面，晶硅电池边缘处的氮化硅层的将被去掉，使得并联电阻提升，从而光电转换效率改善。
实施例1：本发明实施例晶硅电池的制作方法，具体实施步骤如下：将156*156面积的多晶硅经过制绒、扩散制结、刻边、去磷硅玻璃、淀积氮化硅减反射层、印刷电极及烧结工艺后获得晶硅太阳电池，随后进行二次刻边工艺。其中，二次刻边工艺采用湿法化学腐蚀，将无尘布用5-10%的氢氟酸溶液润湿，随后将晶硅电池片的边缘放置在无尘布上，经过15-20分钟后，晶硅电池边缘处的颜色由蓝色变为亮灰色，氮化硅层被去掉。表1为经过二次刻边工艺前后晶硅太阳电池的电学性能参数，从表中可以看出二次刻边工艺使得并联电阻大大提升，光电转换效率提升约0.1%。
表1 二次刻边工艺前后晶硅太阳电池的电学性能参数
实施例2：晶硅电池的制作方法，具体实施步骤如下：将156*156面积的多晶硅经过制绒、扩散制结、刻边、去磷硅玻璃和淀积氮化硅减反射层，随后进行二次刻边工艺。其中，二次刻边工艺采用湿法化学腐蚀，将无尘布在浓度为65%硝酸和浓度为5-10%氢氟酸混合酸溶液中润湿，其中，硝酸与氢氟酸的体积比例为4：1，随后将晶硅电池片的边缘放置在无尘布上，约10分钟后，至晶硅电池边缘处的颜色由蓝色变为亮灰色，氮化硅层即被去掉。最后，印刷电极及烧结工艺制得晶硅太阳电池。上述二次刻边工艺使得并联电阻大大提升，光电转换效率提升约0.2%。
Claims (4)
1.一种晶硅电池的制作方法，其特征在于：包括如下步骤：制绒、扩散制结、刻边、去磷硅玻璃、淀积氮化硅减反射层、印刷电极、烧结及测试分选，其特征在于：在上述步骤中引入二次刻边工艺，去除晶硅电池片边缘的氮化硅层，提升晶硅电池的并联电阻；
所述晶硅电池上端设有梳状顶银电极，下端设有背铝电极，电池片包括从上到下的氮化硅减反射层、N型晶硅和P型晶硅，氮化硅减反射层设置在N型晶硅的上表面；
所述二次刻边工艺在烧结工艺后引入去除电池边缘的氮化硅层；
所述二次刻边工艺采用湿法化学腐蚀去除晶硅电池片边缘的氮化硅层；所述湿法化学腐蚀的步骤如下：将无尘布用氢氟酸溶液润湿，随后将晶硅电池片的边缘放置在无尘布上，至晶硅电池边缘处的颜色由蓝色变为亮灰色，氮化硅层即被去掉。
2.根据权利要求1所述的晶硅电池的制作方法，其特征在于：所述湿法化学腐蚀的步骤如下：将无尘布用硝酸和氢氟酸混合物溶液中润湿，其中，硝酸与氢氟酸的体积比例为5：1-2：1，随后将晶硅电池片的边缘放置在无尘布上，至晶硅电池边缘处的颜色由蓝色变为亮灰色，氮化硅层即被去掉。
3.根据权利要求2所述的晶硅电池的制作方法，其特征在于：所述氢氟酸的浓度为5-10%。
4.根据权利要求1所述的晶硅电池的制作方法，其特征在于：所述晶硅电池边缘的氮化硅层可以为单层、双层或多层。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410839687.8A CN104538498B (zh) | 2014-12-30 | 2014-12-30 | 一种晶硅电池及其制作方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410839687.8A CN104538498B (zh) | 2014-12-30 | 2014-12-30 | 一种晶硅电池及其制作方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104538498A CN104538498A (zh) | 2015-04-22 |
| CN104538498B true CN104538498B (zh) | 2017-02-01 |
Family
ID=52853997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410839687.8A Active CN104538498B (zh) | 2014-12-30 | 2014-12-30 | 一种晶硅电池及其制作方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104538498B (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113451446A (zh) * | 2021-04-16 | 2021-09-28 | 安徽华晟新能源科技有限公司 | 切片硅异质结太阳能电池及制备方法、太阳能电池组件 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101388421A (zh) * | 2008-07-31 | 2009-03-18 | 常州天合光能有限公司 | 太阳电池磷浆的使用方法 |
| KR20100127105A (ko) * | 2009-05-25 | 2010-12-03 | 현대중공업 주식회사 | 태양전지의 제조방법 |
| CN102403409A (zh) * | 2011-11-24 | 2012-04-04 | 苏州阿特斯阳光电力科技有限公司 | 晶体硅太阳能电池的制备方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5334645B2 (ja) * | 2009-03-31 | 2013-11-06 | 富士フイルム株式会社 | 可撓性太陽電池モジュール |
-
2014
- 2014-12-30 CN CN201410839687.8A patent/CN104538498B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101388421A (zh) * | 2008-07-31 | 2009-03-18 | 常州天合光能有限公司 | 太阳电池磷浆的使用方法 |
| KR20100127105A (ko) * | 2009-05-25 | 2010-12-03 | 현대중공업 주식회사 | 태양전지의 제조방법 |
| CN102403409A (zh) * | 2011-11-24 | 2012-04-04 | 苏州阿特斯阳光电力科技有限公司 | 晶体硅太阳能电池的制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104538498A (zh) | 2015-04-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103887347B (zh) | 一种双面p型晶体硅电池结构及其制备方法 | |
| CN102110743B (zh) | 局部激光熔融磷硅玻璃制作选择性发射极太阳电池的方法 | |
| CN106992229A (zh) | 一种perc电池背面钝化工艺 | |
| CN105355693B (zh) | 一种可提高光电转换效率的perc太阳能光伏电池 | |
| CN109244194A (zh) | 一种低成本p型全背电极晶硅太阳电池的制备方法 | |
| CN106711239A (zh) | Perc太阳能电池的制备方法及其perc太阳能电池 | |
| CN104993059B (zh) | 一种硅基钙钛矿异质结太阳电池及其制备方法 | |
| CN103594529A (zh) | Mwt与背钝化结合的晶硅太阳能电池及其制造方法 | |
| CN109802008B (zh) | 一种高效低成本n型背结pert双面电池的制造方法 | |
| CN106972079A (zh) | Perc太阳能电池硅片背面的清洗方法 | |
| CN110459638A (zh) | 一种Topcon钝化的IBC电池及其制备方法 | |
| CN101431113A (zh) | 背部钝化的高效太阳电池结构及其生产工艺 | |
| CN104538498B (zh) | 一种晶硅电池及其制作方法 | |
| CN209183556U (zh) | 硅基太阳能电池及光伏组件 | |
| CN102683483B (zh) | 一种晶硅太阳能电池去死层方法 | |
| CN109888029A (zh) | 一种用于改善perc电池铝空洞的烧结方法 | |
| CN104134706B (zh) | 一种石墨烯硅太阳电池及其制作方法 | |
| CN105655448B (zh) | 一种高效彩色多晶太阳能电池及其制备方法 | |
| CN106784049A (zh) | 一种局部掺杂晶体硅太阳能电池的制备方法及其制得的电池 | |
| CN206976375U (zh) | 一种晶体硅太阳能电池 | |
| CN110391319A (zh) | 一种抗pid效应的高效黑硅电池片的制备方法 | |
| CN102522453B (zh) | 一种场效应晶体硅太阳能电池的制作方法 | |
| CN103943729A (zh) | 高效太阳能电池的金属化制造方法 | |
| CN208622739U (zh) | 一种增强背钝化的perc单面太阳能电池 | |
| CN208507688U (zh) | 能够提升背面光电转换效率的p型perc双面太阳能电池 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Lu Bo Inventor after: Lv Wenhui Inventor after: Zhao Qingguo Inventor after: Chen Zuogeng Inventor after: Gong Yi Inventor before: Chen Zuogeng Inventor before: Lv Wenhui Inventor before: Gong Yi |