CN110391319A - 一种抗pid效应的高效黑硅电池片的制备方法 - Google Patents
一种抗pid效应的高效黑硅电池片的制备方法 Download PDFInfo
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Abstract
本发明涉及一种抗PID效应的高效黑硅电池片的制备方法,属于黑硅电池技术领域。首先通过常规工艺进行黑硅制绒、扩散,随后将酸刻蚀去除PSG后的硅片放入到扩散炉中进行预钝化处理,最后进行PECVD镀膜和丝网印刷,得到抗PID效应的高效黑硅电池片。本发明通过预钝化工艺在黑硅表面制备致密SiO2,保证黑硅复杂绒面结构表面均已沉积SiO2薄膜;PECVD工序中通过调整SiH4流量实现降低SINx薄膜折射率,提高SiNx的减反效果尤其是短波段的光吸收,发挥出黑硅电池在短波段高量子效率的优势。
Description
技术领域
本发明涉及一种抗PID效应的高效黑硅电池片的制备方法,属于黑硅电池技术领域。
背景技术
近年来,晶硅太阳能电池占据着光伏市场90%的份额,晶硅市场总量仍在快速扩大,但增量部分以单晶为主,多晶市场因多晶电池转换效率提升潜力略逊于单晶,增长速度明显放缓。度电成本的降低主要依靠组件功率的提升及制造成本的下降,黑硅电池技术是实现多晶电池进一步提效的必由之路。
黑硅电池技术主要通过反应离子刻蚀、金属离子辅助刻蚀、光刻技术等方法在硅片表面制备出微结构,从而增强硅片表面陷光特性,提高光吸收。黑硅虽然具备优异的减反射效果但是同时具有较大的比表面积,导致表面复合速率变大,少子寿命降低,这对后续工艺中的电池表面钝化及组件抗PID性能产生不利影响。为保证黑硅组件抗PID性能达标,电池制备过程中需提高SiH4流量增强表面钝化效果,该工艺变动导致的结果就是提高了SiNx折射率,降低了SiNx的减反效果,抑制黑硅电池的低反射率优势。
为进一步提高黑硅电池的电池转换效率,同时改善黑硅电池组件抗PID性能等问题。
发明内容
本发明的目的是克服上述不足之处,提供一种抗PID效应的高效黑硅电池片的制备方法,适用于高效多晶黑硅电池及其它具有复杂绒面结构的单、多晶电池的生产。
本发明的技术方案,本发明涉及一种抗PID效应的高效黑硅电池片的制备方法,用于多晶太阳能电池片的生产,首先通过常规工艺进行黑硅制绒、扩散,随后将酸刻蚀去除PSG后的硅片放入到扩散炉中进行预钝化处理,最后进行PECVD镀膜和丝网印刷,得到抗PID效应的高效黑硅电池片。
图1为常规工艺路线与预钝化工艺路线图。
其主要差异在于:常规硅片扩散后通过酸刻蚀去除扩散导致的PSG后通过PECVD沉积钝化膜和丝网印刷电极制备成电池。而预钝化工艺则是将酸刻蚀去除PSG后的硅片放入到扩散炉中进行预钝化处理,而其他生产步骤与常规路线相同。
一种抗PID效应的高效黑硅电池片的制备方法,其通过预钝化工艺制备致密氧化层,不仅起到表面钝化效果提高电池开路电压,同时提高抗PID性能。
一种抗PID效应的高效黑硅电池片的制备方法,所述PECVD工序通过调整硅烷流量,最大程度发挥黑硅电池低反射率优势,提高黑硅电池短路电流。
进一步地,具体步骤如下:
(1)黑硅制绒:采用金属催化化学腐蚀法MCCE制备多晶黑硅绒面,得到纳米级孔洞结构;
(2)扩散:在高温条件下,以氮气为载体将磷源三氯氧磷(POCl3)带入扩散炉中进行表面掺杂形成PN结;扩散中包含两次沉积过程,第一次沉积过程中小氮流量为1200-1800mL/min,第二次沉积过程中小氮流量为300-700mL/min;
(3)蚀刻:将扩散后的硅片置于混合酸溶液中,去除磷硅玻璃及边缘刻蚀;所述混合酸溶液按体积浓度计,含有30%-35%的HNO3和体积浓度为2%-6%的HF;
(4)预钝化:将蚀刻后的放入到扩散炉中进行预钝化处理;所述钝化处理包括两次预钝化过程,第一次预钝化过程中钝化温度为650-700℃,第二次预钝化过程中钝化温度为680-720℃;
(5)PECVD镀膜:通过调整SiH4及NH3流量在硅片表面形成性能优异的减反膜,镀膜过程包括三次沉积过程,其中第一次沉积中SiH4流量为900-1100mL/min,NH3流量为3900-4100mL/min,第二次沉积中SiH4流量为420-480mL/min,NH3流量为3900-4100mL/min,第三次沉积中SiH4流量为420-480mL/min,NH3流量为4900-5100mL/min;
(6)丝网印刷:通过丝网印刷机制备正面银电极、背面铝电极及铝背场,最后制得抗PID效应的高效黑硅电池片。
进一步地,步骤(2)所述扩散具体过程为:
a、升温:在880-920s内升温至760-800℃;小氮流量为0,大氮流量18000-22000mL/min,干氧流量为0;
b、第一次沉积:沉积温度为780-820℃,沉积时间为300-500s;小氮流量为1200-1800mL/min,大氮流量18000-22000mL/min,干氧流量为3000mL/min;
c、第一次推进:推进温度为830-870℃,推进时间为800-1200s;小氮流量为0,大氮流量18000-22000mL/min,干氧流量为0;
d、第二次沉积:沉积温度为830-870℃,沉积时间为300-500s;小氮流量为300-700mL/min,大氮流量18000-22000mL/min,干氧流量为2000mL/min;
e、第二次推进:推进温度为680-720℃,推进时间为800-1200s;小氮流量为0,大氮流量14000-16000mL/min,干氧流量为0;
f、降温:在980-1020s内降温至630-670℃;小氮流量为0,大氮流量14000-16000mL/min,干氧流量为0。
进一步地,步骤(4)所述预钝化的具体过程为:
a、升温:在380-420s内升温至530-570℃;大氮流量18000-22000mL/min,干氧流量为0;
b、第一次预钝化:预钝化温度为650-700℃,时间为600-1000s;大氮流量18000-22000mL/min,干氧流量为500mL/min;
c、第二次预钝化:预钝化温度为680-720℃,时间为600-1000s;大氮流量18000-22000mL/min,干氧流量为500mL/min;
d、降温:在380-420s内降温至530-570℃;大氮流量18000-22000mL/min,干氧流量为0。
或,进一步地,步骤(4)所述预钝化的具体过程为:
a、升温:在380-420s内升温至530-570℃;大氮流量18000-22000mL/min;
b、第一次预钝化:预钝化温度为680-720℃,时间为900-1100s;大氮流量18000-22000mL/min;
c、第二次预钝化:预钝化温度为700-740℃,时间为900-1100s;大氮流量18000-22000mL/min;
d、降温:在380-420s内降温至530-570℃;大氮流量20000mL/min。
进一步地,步骤(5)所述PECVD镀膜中包括的三次沉积过程具体如下:
a、第一次沉积:首先在250-350s内升温到430-470℃,SiH4流量为900-1100mL/min,NH3流量为3900-4100mL/min,沉积时间为75-85s;
b、第二次沉积:沉积温度为430-470℃,SiH4流量420-480mL/min,NH3流量为3900-4100mL/min,沉积时间为210-230s;
c、第三次沉积:沉积温度为430-470℃,SiH4流量420-480mL/min,NH3流量为4900-5100mL/min,沉积时间为290-310s。
进一步地,步骤(1)所述MCCE制绒主要步骤如下:
①预处理:利用氢氧化钾溶液将多晶金刚线返工片表面抛光,去除酸制绒绒面;其中氢氧化钾体积浓度为1.6%-3.2%,反应温度78-82℃,反应时间300-400s;
②银沉积:将硅片置于硝酸银和HF溶液的混合溶液中,在硅片表面沉积一层银颗粒,混合溶液中HF的体积浓度为4%-9%,硝酸银的质量浓度为0.001%-0.005%,反应温度25-35℃,反应时间60-300s;
③挖孔:将沉积银之后的硅片置于HF溶液和双氧水混合溶液中,形成纳米级孔洞绒面;混合溶液中按体积浓度计,含有HF2%-7%,双氧水0.5%-2.5%;反应温度28-32℃,反应时间200-300s;
④扩孔:将挖孔形成的纳米级孔洞,扩展成为亚微米级孔洞,扩孔溶液按体积浓度计,含有HF 1%-4%,HNO3 9%-15%;反应温度6-15℃,反应时间60-180s,得到孔洞孔径400-600nm的黑硅结构;
⑤碱洗和脱银:孔洞表面修饰;修饰溶液中按体积浓度计,含有双氧水0.3%-1.5%,氨水0.2%-1.2%,氢氧化钾1.6%-3.2%,反应温度室温,反应时间240-360s;
⑥酸洗:采用混合酸中和残留碱液,混合酸中按体积浓度计,含有氢氟酸3%-6%,盐酸3%-4%;反应温度室温,反应时间240-360s;
⑦水洗:去除残留酸液;
⑧烘干:将水洗后的硅片用热氮烘干;烘干温度85℃,时间480-720s。
本发明的有益效果:本发明通过预钝化工艺在黑硅表面制备致密SiO2,保证黑硅复杂绒面结构表面均已沉积SiO2薄膜;PECVD工序中通过调整SiH4流量实现降低SINx薄膜折射率,提高SiNx的减反效果尤其是短波段的光吸收,发挥出黑硅电池在短波段高量子效率的优势。
附图说明
图1现有技术和本发明工艺流程对比示意图。
具体实施方式
实施例1
(1)黑硅制绒:采用金属催化化学腐蚀法MCCE制备多晶黑硅绒面,得到纳米级孔洞结构;MCCE制绒主要步骤如下:
①预处理:利用氢氧化钾溶液将多晶金刚线返工片表面抛光,去除酸制绒绒面;其中氢氧化钾体积浓度为2%,反应温度80℃,反应时间350s;
②银沉积:将硅片置于硝酸银和HF溶液的混合溶液中,在硅片表面沉积一层银颗粒,混合溶液中HF的体积浓度为5%,硝酸银的质量浓度为0.003%,反应温度30℃,反应时间200s;
③挖孔:将沉积银之后的硅片置于HF溶液和双氧水混合溶液中,形成纳米级孔洞绒面;混合溶液中按体积浓度计,含有HF 5%,双氧水2%;反应温度30℃,反应时间250s;
④扩孔:将挖孔形成的纳米级孔洞,扩展成为亚微米级孔洞,扩孔溶液按体积浓度计,含有HF 2%,HNO3 12%;反应温度10℃,反应时间100s,得到孔洞孔径500nm的黑硅结构;
⑤碱洗和脱银:孔洞表面修饰;修饰溶液中按体积浓度计,含有双氧水1%,氨水1%,氢氧化钾2%,反应温度室温,反应时间300s;
⑥酸洗:采用混合酸中和残留碱液,混合酸中按体积浓度计,含有氢氟酸5%,盐酸3%;反应温度室温,反应时间300s;
⑦水洗:去除残留酸液;
⑧烘干:将水洗后的硅片用热氮烘干;烘干温度85℃,时间600s。
(2)扩散:在高温条件下,以氮气为载体将磷源三氯氧磷(POCl3)带入扩散炉中进行表面掺杂形成PN结,采用钝化工艺对其进行处理;具体过程为:
a、升温:在900s内升温至780℃;小氮流量为0,大氮流量20000mL/min,干氧流量为0;
b、第一次沉积:沉积温度为800℃,沉积时间为400s;小氮流量为1500mL/min,大氮流量20000mL/min,干氧流量为3000mL/min;
c、第一次推进:推进温度为850℃,推进时间为1000s;小氮流量为0,大氮流量20000mL/min,干氧流量为0;
d、第二次沉积:沉积温度为850℃,沉积时间为400s;小氮流量为500mL/min,大氮流量20000mL/min,干氧流量为2000mL/min;
e、第二次推进:推进温度为700℃,推进时间为1000s;小氮流量为0,大氮流量15000mL/min,干氧流量为0;
f、降温:在1000s内降温至650℃;小氮流量为0,大氮流量15000mL/min,干氧流量为0。
(3)蚀刻:将扩散后的硅片置于混合酸溶液中,去除磷硅玻璃及边缘刻蚀;所述混合酸溶液按体积浓度计,含有32%的HNO3和4%的HF;
(4)预钝化:将蚀刻后的放入到扩散炉中进行预钝化处理;
a、升温:在400s内升温至550℃;大氮流量20000mL/min,干氧流量为0;
b、第一次预钝化:预钝化温度为650℃,时间为600s;大氮流量20000mL/min,干氧流量为500mL/min;
c、第二次预钝化:预钝化温度为680℃,时间为600s;大氮流量20000mL/min,干氧流量为500mL/min;
d、降温:在400s内降温至550℃;大氮流量20000mL/min,干氧流量为0。
(5)PECVD镀膜:通过调整SiH4流量在硅片表面形成性能优异的减反膜;
a、第一次沉积:首先在300s内升温到450℃,SiH4流量为1000mL/min,NH3流量为4000mL/min,沉积时间为80s;
b、第二次沉积:沉积温度为430-470℃,SiH4流量420-480mL/min,NH3流量为4000mL/min,沉积时间为220s;
c、第三次沉积:沉积温度为430-470℃,SiH4流量420-480mL/min,NH3流量为5000mL/min,沉积时间为300s。
(6)丝网印刷:通过丝网印刷机制备正面银电极、背面铝电极及铝背场,最后制得抗PID效应的高效黑硅电池片。
对实施例1制备得到的抗PID效应的高效黑硅电池片进行测定,具体结果如表1所示。与使用常规工艺制备得到的黑硅电池片进行对比。使用常规工艺制备的黑硅电池片,光电转换效率19.326%,开路电压0.6428V,短路电流9.128A;本发明制备所得的高效黑硅电池片折射率降低0.02%,电池光电转换效率提高0.05-0.12%,开路电压提高1-2mV,短路电流提高30-50mA。
实施例2
其他步骤参数同实施例1,步骤(4)中预钝化具体过程如下:
a、升温:在400s内升温至550℃;大氮流量20000mL/min;
b、第一次预钝化:预钝化温度为700℃,时间为1000s;大氮流量20000mL/min;
c、第二次预钝化:预钝化温度为720℃,时间为1000s;大氮流量20000mL/min;
d、降温:在400s内降温至550℃;大氮流量20000mL/min。
对实施例2制备得到的抗PID效应的高效黑硅电池片进行测定,具体结果如表1所示。
表1
工艺方案 | Uoc(V) | Isc(A) | Rs | Rsh | FF | NCell |
常规工艺 | 0.6428 | 9.1283 | 0.00118 | 81.15 | 80.92 | 19.326% |
实施例1 | 0.6448 | 9.1704 | 0.00126 | 69.46 | 80.76 | 19.439% |
实施例2 | 0.6441 | 9.1600 | 0.00123 | 72.96 | 80.90 | 19.431% |
上表中,Uoc为开路电压,Isc为短路电流,Rs为串联电阻,Rsh为并联电阻,FF为填充因子,Ncell为光电转换效率。
Claims (7)
1.一种抗PID效应的高效黑硅电池片的制备方法,其特征是:首先通过常规工艺进行黑硅制绒、扩散,随后将酸刻蚀去除PSG后的硅片放入到扩散炉中进行预钝化处理,最后进行PECVD镀膜和丝网印刷,得到抗PID效应的高效黑硅电池片。
2.如权利要求1所述抗PID效应的高效黑硅电池片的制备方法,其特征是步骤如下:
(1)黑硅制绒:采用金属催化化学腐蚀法(MCCE)制备多晶黑硅绒面,得到纳米级孔洞结构;
(2)扩散:在高温条件下,以氮气为载体将磷源三氯氧磷(POCl3)带入扩散炉中进行表面掺杂形成PN结,扩散工艺中包含两次沉积过程,第一次沉积过程中小氮流量为1200-1800mL/min,第二次沉积过程中小氮流量为300-700mL/min;
(3)蚀刻:将扩散后的硅片置于混合酸溶液中,去除磷硅玻璃及边缘刻蚀;所述混合酸溶液按体积浓度计,含有30%-35%的HNO3和2%-6%的HF;
(4)预钝化:将蚀刻后的硅片放入到扩散炉中进行预钝化处理;所述钝化处理包括两次预钝化过程,第一次预钝化过程中钝化温度为650-700℃,第二次预钝化过程中钝化温度为680-720℃;
(5)PECVD镀膜:通过调整SiH4及NH3流量在硅片表面形成性能优异的减反膜,镀膜过程包括三次沉积过程,其中第一次沉积中SiH4流量为900-1100mL/min,NH3流量为3900-4100mL/min,第二次沉积中SiH4流量为420-480mL/min,NH3流量为3900-4100mL/min,第三次沉积中SiH4流量为420-480mL/min,NH3流量为4900-5100mL/min;
(6)丝网印刷:通过丝网印刷机制备正面银电极、背面铝电极及铝背场,最后制得抗PID效应的高效黑硅电池片。
3.如权利要求2所述抗PID效应的高效黑硅电池片的制备方法,其特征是:步骤(2)所述扩散具体过程为:
a、升温:在880-920s内升温至760-800℃;小氮流量为0,大氮流量18000-22000mL/min,干氧流量为0;
b、第一次沉积:沉积温度为780-820℃,沉积时间为300-500s;小氮流量为1200-1800mL/min,大氮流量18000-22000mL/min,干氧流量为3000mL/min;
c、第一次推进:推进温度为830-870℃,推进时间为800-1200s;小氮流量为0,大氮流量18000-22000mL/min,干氧流量为0;
d、第二次沉积:沉积温度为830-870℃,沉积时间为300-500s;小氮流量为300-700mL/min,大氮流量18000-22000mL/min,干氧流量为2000mL/min;
e、第二次推进:推进温度为680-720℃,推进时间为800-1200s;小氮流量为0,大氮流量14000-16000mL/min,干氧流量为0;
f、降温:在980-1020s内降温至630-670℃;小氮流量为0,大氮流量14000-16000mL/min,干氧流量为0。
4.如权利要求2所述抗PID效应的高效黑硅电池片的制备方法,其特征是:步骤(4)所述预钝化的具体过程为:
a、升温:在380-420s内升温至530-570℃;大氮流量18000-22000mL/min,干氧流量为0;
b、第一次预钝化:预钝化温度为650-700℃,时间为600-1000s;大氮流量18000-22000mL/min,干氧流量为500mL/min;
c、第二次预钝化:预钝化温度为680-720℃,时间为600-1000s;大氮流量18000-22000mL/min,干氧流量为500mL/min;
d、降温:在380-420s内降温至530-570℃;大氮流量18000-22000mL/min,干氧流量为0。
5.如权利要求2所述抗PID效应的高效黑硅电池片的制备方法,其特征是:步骤(4)所述预钝化的具体过程为:
a、升温:在380-420s内升温至530-570℃;大氮流量18000-22000mL/min;
b、第一次预钝化:预钝化温度为680-720℃,时间为900-1100s;大氮流量18000-22000mL/min;
c、第二次预钝化:预钝化温度为700-740℃,时间为900-1100s;大氮流量18000-22000mL/min;
d、降温:在380-420s内降温至530-570℃;大氮流量20000mL/min。
6.如权利要求2所述抗PID效应的高效黑硅电池片的制备方法,其特征是:步骤(5)所述PECVD镀膜中包括的三次沉积过程具体如下:
a、第一次沉积:首先在250-350s内升温到430-470℃,SiH4流量为900-1100mL/min,NH3流量为3900-4100 mL/min,沉积时间为75-85s;
b、第二次沉积:沉积温度为430-470℃,SiH4流量420-480mL/min,NH3流量为3900-4100mL/min,沉积时间为210-230s;
c、第三次沉积:沉积温度为430-470℃,SiH4流量420-480mL/min,NH3流量为4900-5100mL/min,沉积时间为290-310s。
7.如权利要求2所述抗PID效应的高效黑硅电池片的制备方法,其特征是:步骤(1)所述MCCE制绒主要步骤如下:
①预处理:利用氢氧化钾溶液将多晶金刚线返工片表面抛光,去除酸制绒绒面;其中氢氧化钾体积浓度为1.6%-3.2%,反应温度78-82℃,反应时间300-400s;
②银沉积:将硅片置于硝酸银和HF溶液的混合溶液中,在硅片表面沉积一层银颗粒,混合溶液中HF的体积浓度为4%-9%,硝酸银的质量浓度为0.001%-0.005%,反应温度25-35℃,反应时间60-300s;
③挖孔:将沉积银之后的硅片置于HF溶液和双氧水混合溶液中,形成纳米级孔洞绒面;混合溶液中按体积浓度计,含有HF2%-7%,双氧水0.5%-2.5%;反应温度28-32℃,反应时间200-300s;
④扩孔:将挖孔形成的纳米级孔洞,扩展成为亚微米级孔洞,扩孔溶液按体积浓度计,含有HF 1%-4%,HNO3 9%-15%;反应温度6-15℃,反应时间60-180s,得到孔洞孔径400-600nm的黑硅结构;
⑤碱洗和脱银:孔洞表面修饰;修饰溶液中按体积浓度计,含有双氧水0.3%-1.5%,氨水0.2%-1.2%,氢氧化钾1.6%-3.2%,反应温度室温,反应时间240-360s;
⑥酸洗:采用混合酸中和残留碱液,混合酸中按体积浓度计,含有氢氟酸3%-6%,盐酸3%-4%;反应温度室温,反应时间240-360s;
⑦水洗:去除残留酸液;
⑧烘干:将水洗后的硅片用热氮烘干;烘干温度85℃,时间480-720s。
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