CN104538370A - 一种基于预留槽塑封技术的pop封装结构及其制备方法 - Google Patents

一种基于预留槽塑封技术的pop封装结构及其制备方法 Download PDF

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CN104538370A
CN104538370A CN201410843485.0A CN201410843485A CN104538370A CN 104538370 A CN104538370 A CN 104538370A CN 201410843485 A CN201410843485 A CN 201410843485A CN 104538370 A CN104538370 A CN 104538370A
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tin cream
plastic
packaging body
substrate
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谌世广
梁天胜
刘卫东
王虎
李涛涛
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Huatian Technology Xian Co Ltd
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Abstract

本发明公开了一种基于预留槽塑封技术的POP封装结构及其制备方法，所述封装结构主要包括有基板、焊盘、凸点、芯片、塑封锡槽、塑封体、锡膏柱；所述塑封体上有塑封锡槽，塑封锡槽底部裸露有焊盘，塑封锡槽内部有锡膏柱，锡膏柱下端与焊盘连接。所述制备方法：基板上倒装上芯，塑封并制作塑封锡槽，塑封锡槽内印刷锡膏柱。该发明不需要完成封装后进行开孔过程；而且锡膏印刷，工艺简单。

Description

一种基于预留槽塑封技术的POP封装结构及其制备方法
技术领域
本发明涉及半导体封装技术领域，具体是一种基于预留槽塑封技术的POP封装结构及其制备方法。
背景技术
当前半导体封装发展的趋势是越来越多的向高频、多芯片模块(MCM)，系统集成(SiP)封装，堆叠封装(PiP,PoP)发展。
三维堆叠封装可以在更小的空间内集成更多的半导体芯片，采用三维堆叠封装的产品拥有更高的性能、更高的可靠性，以及更低的价格。目前，采用三维堆叠封装的产品，例如存储器，能实现更大的存储量，并且已经实现工业化生产。
目前pop制备技术有如下挑战：
(1)上封装体与下封装体互连方式；
(2)高温焊接翘曲控制；
(3)封装厚度控制。
优点：工艺成熟；
缺点：封装后需在封装体进行开孔；工序复杂。
发明内容
对于上述现有技术存在的问题，本发明公开了一种基于预留槽塑封技术的POP封装结构及其制备方法，其不需要完成封装后进行开孔过程；而且锡膏印刷，工艺简单。
一种基于预留槽塑封技术的POP封装结构，主要包括有基板、焊盘、凸点、芯片、塑封锡槽、塑封体、锡膏柱；所述基板通过焊盘、凸点连接芯片，所述塑封体包围芯片、焊盘、凸点、锡膏柱和基板的上表面，塑封体上有塑封锡槽，塑封锡槽底部裸露有焊盘，塑封锡槽内部有锡膏柱，锡膏柱下端与焊盘连接。
所述锡膏柱上端有锡膏球。
所述POP封装结构还连接有上封装体，所述上封装体主要包括有上封装体芯片、上封装体凸点、填充胶和上封装体基板；上封装体基板通过焊盘、上封装体凸点与上封装体芯片连接，填充胶填充四者连接部分；所述POP封装结构的锡膏柱与上封装体基板的下表面连接。
所述POP封装结构的锡膏柱上的锡膏球与上封装体基板的下表面连接。
一种基于预留槽塑封技术的POP封装结构的制备方法，其按照以下具体步骤进行：
步骤一：基板上倒装上芯有芯片；
步骤二：塑封体包围芯片、焊盘、凸点、锡膏柱和基板的上表面，塑封体上制作有塑封锡槽，塑封锡槽底部裸露出焊盘；
步骤三：在塑封锡槽内锡膏印刷和回流，形成锡膏柱，最终形成所述POP封装结构；
步骤四：上封装体与POP封装结构连接，POP封装结构的锡膏柱与上封装体基板的下表面连接，形成堆叠封装结构。
所述步骤三的锡膏柱上端还可以制作锡膏球；
所述步骤四可以替换为：上封装体与POP封装结构连接，所述POP封装结构的锡膏柱上的锡膏球与上封装体基板的下表面连接，形成堆叠封装结构。
附图说明
图1为倒装上芯完成的产品图；
图2为用特殊模具制作的塑封图；
图3为锡膏印刷和回流图；
图4为上层产品贴装和回流图。
图中，1为基板，2为焊盘，3为凸点，4为芯片，5为塑封锡槽，6为塑封体，7为锡膏柱，8为锡膏球，9为上封装体芯片，10为上封装体凸点，11为填充胶，12为上封装体基板。
具体实施方式
下面根据附图对该发明做一详细描述。
如图4所示，一种基于预留槽塑封技术的POP封装结构，主要包括有基板1、焊盘2、凸点3、芯片4、塑封锡槽5、塑封体6、锡膏柱7；所述基板1通过焊盘2、凸点3连接芯片4，所述塑封体6包围芯片4、焊盘2、凸点3、锡膏柱7和基板1的上表面，塑封体6上有塑封锡槽5，塑封锡槽5底部裸露有焊盘2，塑封锡槽5内部有锡膏柱7，锡膏柱7下端与焊盘2连接。
所述锡膏柱7上端有锡膏球8。
所述POP封装结构还连接有上封装体，所述上封装体主要包括有上封装体芯片9、上封装体凸点10、填充胶11和上封装体基板12；上封装体基板12通过焊盘、上封装体凸点10与上封装体芯片9连接，填充胶11填充四者连接部分；所述POP封装结构的锡膏柱7与上封装体基板12的下表面连接。
所述POP封装结构的锡膏柱7上的锡膏球8与上封装体基板12的下表面连接。
一种基于预留槽塑封技术的POP封装结构的制备方法，其按照以下具体步骤进行：
步骤一：基板1上倒装上芯有芯片4，如图1所示；
步骤二：塑封体6包围芯片4、焊盘2、凸点3、锡膏柱7和基板1的上表面，塑封体6上制作有塑封锡槽5，塑封锡槽5底部裸露出焊盘2，如图2所示；
步骤三：在塑封锡槽5内锡膏印刷和回流，形成锡膏柱7，最终形成所述POP封装结构，如图3所示；
步骤四：上封装体与POP封装结构连接，POP封装结构的锡膏柱7与上封装体基板12的下表面连接，形成堆叠封装结构，如图4所示。
所述步骤三的锡膏柱7上端还可以制作锡膏球8；
所述步骤四可以替换为：上封装体与POP封装结构连接，所述POP封装结构的锡膏柱7上的锡膏球8与上封装体基板12的下表面连接，形成堆叠封装结构。

Claims (8)

1.一种基于预留槽塑封技术的POP封装结构，其特征在于，所述封装结构主要包括有基板(1)、焊盘(2)、凸点(3)、芯片(4)、塑封锡槽(5)、塑封体(6)、锡膏柱(7)；所述基板(1)通过焊盘(2)、凸点(3)连接芯片(4)，所述塑封体(6)包围芯片(4)、焊盘(2)、凸点(3)、锡膏柱(7)和基板(1)的上表面，塑封体(6)上有塑封锡槽(5)，塑封锡槽(5)底部裸露有焊盘(2)，塑封锡槽(5)内部有锡膏柱(7)，锡膏柱(7)下端与焊盘(2)连接。
2.根据权利要求1所述的一种基于预留槽塑封技术的POP封装结构，其特征在于，所述锡膏柱(7)上端有锡膏球(8)。
3.根据权利要求1所述的一种基于预留槽塑封技术的POP封装结构，其特征在于，所述POP封装结构还连接有上封装体，所述上封装体主要包括有上封装体芯片(9)、上封装体凸点(10)、填充胶(11)和上封装体基板(12)；上封装体基板(12)通过焊盘、上封装体凸点(10)与上封装体芯片(9)连接，填充胶(11)填充四者连接部分；所述POP封装结构的锡膏柱(7)与上封装体基板(12)的下表面连接。
4.根据权利要求2或者3所述的一种基于预留槽塑封技术的POP封装结构，其特征在于，所述POP封装结构的锡膏柱(7)上的锡膏球(8)与上封装体基板(12)的下表面连接。
5.一种基于预留槽塑封技术的POP封装结构的制备方法，其特征在于，其按照以下具体步骤进行：
步骤一：基板(1)上倒装上芯有芯片(4)；
步骤二：塑封体(6)包围芯片(4)、焊盘(2)、凸点(3)、锡膏柱(7)和基板(1)的上表面，塑封体(6)上制作有塑封锡槽(5)，塑封锡槽(5)底部裸露出焊盘(2)；
步骤三：在塑封锡槽(5)内锡膏印刷和回流，形成锡膏柱(7)，最终形成所述POP封装结构。
6.根据权利要求5所述的一种基于预留槽塑封技术的POP封装结构的制备方法，其特征在于，所述步骤三的锡膏柱(7)上端制作锡膏球(8)。
7.根据权利要求5所述的一种基于预留槽塑封技术的POP封装结构的制备方法，其特征在于，所述步骤三形成的POP封装结构与上封装体连接，POP封装结构的锡膏柱(7)与上封装体基板(12)的下表面连接，形成堆叠封装结构。
8.根据权利要求7所述的一种基于预留槽塑封技术的POP封装结构的制备方法，其特征在于，所述POP封装结构的锡膏柱(7)上的锡膏球(8)与上封装体基板(12)的下表面连接，形成堆叠封装结构。
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