CN104523285A - 一种电子皮肤及其制备方法 - Google Patents

一种电子皮肤及其制备方法 Download PDF

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Publication number
CN104523285A
CN104523285A CN201410770984.1A CN201410770984A CN104523285A CN 104523285 A CN104523285 A CN 104523285A CN 201410770984 A CN201410770984 A CN 201410770984A CN 104523285 A CN104523285 A CN 104523285A
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Prior art keywords
film transistor
thin film
tft
insulating barrier
electrode
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CN201410770984.1A
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CN104523285B (zh
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刘萍
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Guang Dong Dongbond Technology Co ltd
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Guangdong Dongbang Technology Co Ltd
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Priority to CN201410770984.1A priority Critical patent/CN104523285B/zh
Publication of CN104523285A publication Critical patent/CN104523285A/zh
Priority to PCT/CN2015/095549 priority patent/WO2016091070A1/zh
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Publication of CN104523285B publication Critical patent/CN104523285B/zh
Priority to US15/618,976 priority patent/US10624582B2/en
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    • A61B5/6801—Arrangements of detecting, measuring or recording means, e.g. sensors, in relation to patient specially adapted to be attached to or worn on the body surface
    • A61B5/6813—Specially adapted to be attached to a specific body part
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    • A61B5/01—Measuring temperature of body parts ; Diagnostic temperature sensing, e.g. for malignant or inflamed tissue
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    • A61B5/024—Detecting, measuring or recording pulse rate or heart rate
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Abstract

本发明公开了一种电子皮肤及其制备方法，电子皮肤是在柔性基板上设有氧化物薄膜晶体管、压力传感器和温度传感器，压力传感器和温度传感器分别位于柔性基板的两侧，氧化物薄膜晶体管包括第一薄膜晶体管和第二薄膜晶体管，压力传感器用于驱动第一薄膜晶体管，温度传感器用于驱动第二薄膜晶体管。制备方法是在双面覆有导电材料的柔性基板上进行刻蚀、沉积形成氧化物薄膜晶体管、压力传感器和温度传感器。本发明提供的电子皮肤，可以同时测量压力和温度，结构简单，工作电压低、功耗小、灵敏度高、传感器信号间的干扰小。

Description

一种电子皮肤及其制备方法
技术领域
本发明涉及一种电子皮肤及其制备方法。
背景技术
电子皮肤是在柔软的塑料薄膜中，嵌入各种各样的柔性薄膜晶体管和各类传感器，因为和皮肤一样又软又薄，又是贴在皮肤上的电子设备，可以满足人体大面积的要求。电子皮肤不仅可以感受压力和温度，还可以感受光、湿度、紧张以及超声波等，能够通过实时监测脉搏、心跳、体温、肌肉群震动等人体健康生理指标，对人体健康数据变化及时做出反馈，甚至实现疾病的前期预防和诊断。同时还可以配置存储器，还可以具备无线供电、无线数据传输的功能，便于随身携带，进行长时间、连续的医学信号监测。因此该技术打开了通向微型移动健康监测仪的大门。有必要提供一种结构简单、高灵敏度耐用的电子皮肤。
发明内容
为解决上述技术问题，本发明提出一种电子皮肤及其制备方法，该电子皮肤可以同时测量压力和温度，结构简单，工作电压低、功耗小、灵敏度高、传感器信号间的干扰小。
为实现上述目的，本发明采用以下技术方案：
本发明公开了一种电子皮肤，在柔性基板上设有氧化物薄膜晶体管、压力传感器和温度传感器，其中所述压力传感器和所述温度传感器分别位于所述柔性基板的两侧，所述氧化物薄膜晶体管包括第一薄膜晶体管和第二薄膜晶体管，所述压力传感器用于驱动所述第一薄膜晶体管，所述温度传感器用于驱动所述第二薄膜晶体管。
优选地，所述柔性基板的材料是厚度为10～50μm的聚酰亚胺。
优选地，所述第一薄膜晶体管和所述第二薄膜晶体管采用同样的顶栅结构，所述压力传感器和所述温度传感器分别设有对应的存储电容。
优选地，所述第一薄膜晶体管和所述第二薄膜晶体管分别包括漏极、源极、栅极、有源层、第一栅极绝缘层和第二栅极绝缘层，其中：
漏极与源极位于同一层，有源层位于对应的漏极与源极所在的层之上且与对应的漏极、源极部分重叠，第一绝缘层覆盖在对应的有源层之上，第二绝缘层覆盖在对应的漏极、源极与第一绝缘层之上，栅极位于对应的第二绝缘层之上；
所述第一薄膜晶体管的源极与所述压力传感器相连，所述第二薄膜晶体管的源极通过所述柔性基板的过孔与所述温度传感器相连。
优选地，所述第一薄膜晶体管和所述第二薄膜晶体管的漏极、源极、栅极采用金属电极、透明导电电极或碳纳米管；所述第一薄膜晶体管和所述第二薄膜晶体管的有源层采用金属氧化物半导体；所述第一薄膜晶体管和所述第二薄膜晶体管的第一绝缘层采用SiOx，所述第一薄膜晶体管和所述第二薄膜晶体管的第二绝缘层采用SiNx。
本发明另外还公开了一种电子皮肤的制备方法，在双面覆有导电材料的柔性基板上通过刻蚀、沉积方法形成第一薄膜晶体管、第二薄膜晶体管、压力传感器和温度传感器，其中所述压力传感器和所述温度传感器分别形成于所述柔性基板的两侧。
优选地，所述制备方法具体包括以下步骤：
S1：在双面覆有导电材料的柔性基板的一侧刻蚀出图案A，所述图案A包括第一薄膜晶体管的源极、漏极和第二薄膜晶体管的源极、漏极；
S2：在所述柔性基板的另一侧刻蚀出图案B，所述图案B包括温度传感器的电极；
S3：在所述图案B连接的柔性基板的对应位置钻孔，并电镀钻孔位置，使得所述图案B与所述图案A电连接；
S4：在图案A上形成半导体层，再在所述半导体层上再沉积绝缘层，在所述半导体层上分别刻蚀出第一薄膜晶体管和第二薄膜晶体管的有源层，在所述绝缘层分别刻蚀出第一薄膜晶体管和第二薄膜晶体管的第一绝缘层，再在第一薄膜晶体管和第二薄膜晶体管的第一绝缘层沉积第二绝缘层；
S5：在第二绝缘层上形成导电层，刻蚀出第一薄膜晶体管和第二薄膜晶体管的栅极、以及压力传感器。
优选地，步骤S4具体包括：
S41：在图案A上采用磁控溅射的方法形成金属氧化物半导体层，再在金属氧化物半导体层上采用原子层沉积方法形成SiOx层；
S42：在SiOx层上采用干法刻蚀工艺分别刻蚀出第一薄膜晶体管和第二薄膜晶体管的第一绝缘层，在金属氧化物半导体层上采用湿法刻蚀工艺分别刻蚀出第一薄膜晶体管和第二薄膜晶体管的有源层；
S43：在第一薄膜晶体管和第二薄膜晶体管的第一绝缘层上采用等离子体增强化学气相沉积法形成第一薄膜晶体管和第二薄膜晶体管的第二绝缘层，并在第二绝缘层与源极的连接对应位置采用干法刻蚀形成过孔。
优选地，步骤S5具体包括：
S51：在第一薄膜晶体管和第二薄膜晶体管的第二绝缘层上采用磁控溅射的方法形成导电层，刻蚀出第一薄膜晶体管和第二薄膜晶体管的栅极、压力传感器和温度传感器的下电极；
S52：采用等离子体增强化学气相沉积法形成钝化层；
S53：采用干法刻蚀工艺刻蚀出压力传感器的敏感区域，采用印刷或喷墨打印方法形成压力传感器的敏感层，再在敏感层上形成压力传感器的上电极。
优选地，第一薄膜晶体管的源极和漏极之间的间距是2～20μm，第二薄膜晶体管的源极和漏极之间的间距是2～20μm。
本发明与现有技术相比的有益效果在于：本发明提供的电子皮肤将压力传感器和温度传感器设置于柔性基板的两侧，可以同时测量压力和温度，具有柔性的特点，结构简单，工作电压低、功耗小、灵敏度高、传感器信号间的干扰小。
附图说明
图1是本发明优选实施例的电子皮肤的剖面示意图；
图2是传感器单元的等效电路图；
图3是传感器单元的驱动脉冲图；
图4是本发明优选实施例的电子皮肤的制备示意图之一；
图5是本发明优选实施例的电子皮肤的制备示意图之二；
图6是本发明优选实施例的电子皮肤的制备过程中的俯视图；
图7是本发明优选实施例的电子皮肤的温度传感器的连接示意图。
具体实施方式
下面对照附图并结合优选的实施方式对本发明作进一步说明。
图1是本发明优选实施例的电子皮肤的剖面示意图，该电子皮肤包括柔性基板50，柔性基板50上有第一薄膜晶体管、第二薄膜晶体管、压力传感器和温度传感器，其中压力传感器和温度传感器分别位于柔性基板的两侧，第一薄膜晶体管用于驱动压力传感器，第二薄膜晶体管用于驱动温度传感器。第一薄膜晶体管包括漏极11、源极12、栅极13、有源层14、第一绝缘层15和第二绝缘层16，第二薄膜管包括漏极21、源极22、栅极23、有源层24、第一绝缘层25和第二绝缘层26。漏极11、源极12、漏极21、源极22位于同一层，有源层14位于漏极11、源极12所在的层之上且与漏极11、源极12部分重叠，有源层24位于漏极21、源极22所在的层之上且与漏极21、源极22部分重叠，第一绝缘层15覆盖在有源层14之上，第一绝缘层25覆盖在有源层24之上，第二绝缘层16覆盖在漏极11、源极12与第一绝缘层15之上，第二绝缘层26覆盖在漏极21、源极22与第一绝缘层25之上，栅极13位于第二绝缘层16之上，栅极23位于第二绝缘层26之上。压力传感器包括下电极31、上电极32、压力敏感层33和电极34，压力传感器的下电极31通过过孔70与第一薄膜晶体管的源极12相连，下电极31、第二绝缘层16和电极34构成压力传感器的存储电容，压力敏感层33和上电极32的有效区域由钝化层60限定。温度传感器包括下电极41、电极42、过孔43和电极44，温度传感器的电极42通过过孔80和过孔43与第二薄膜晶体管的源极22相连，电极44、第二绝缘层26和下电极41构成温度传感器的存储电容。优选地，柔性基板的材料为10～50μm的聚酰亚胺；漏极11、源极12、栅极13、漏极21、源极22、栅极23、下电极31、上电极32、电极34、下电极41、电极42、电极44以及互联的导电层可以选用金属电极、透明导电电极、导电纳米银、碳纳米管等；有源层14、24可以选用金属氧化物半导体，如ZTO(氧化锌锡)、IGZO(镓铟酸锌)等；第一绝缘层15、25可以选用SiOx；第二绝缘层16、26可以选用SiNx；压力敏感层33可以选用QTC材料、压电材料或压阻材料等，钝化层60选用SiNx。
该电子皮肤的传感器单元可以通过扫描寻址来读出压力、温度变化产生的电信号。传感器单元的等效电路如图2所示，相应的驱动脉冲如图3所示。其中行电极110与第一薄膜晶体管T1的栅极相连，行驱动器130的信号为第一薄膜晶体管T1提供扫描脉冲Vgate以选取行电极，第一薄膜晶体管T1的源极和第二薄膜晶体管T2的源极连接到列电极120。压力传感单元等效为可变电阻R1，有触摸时，电阻大小与压力大小有关；没有触摸时，电阻很大，信号存储在电容器C1中；温度传感单元等效为随温度变化的可变电阻R2，信号存储在电容器C2中。
结合图2和图3，当Vgate为低时，第一薄膜晶体管T1、第二薄膜晶体管T2截止，压力传感器和温度传感器都处于信号积分阶段，若有触摸行为或温度发生变化时，压力传感单元或温度传感单元的电阻发生变化，对应的存储电容通过相应的传感单元放电，节点A1或节点A2的电压发生变化；当Vgate为高时，第一薄膜晶体管T1、第二薄膜晶体管T2导通，压力传感器和温度传感器都处于信号读取阶段，列电极120通过第一薄膜晶体管T1、第二薄膜晶体管T2分别对电容器C1、电容器C2充电，充电信号由列放大器140读出。
制备本发明优选实施例的电子皮肤的制备方法，包括以下步骤：
如图4所示，首先选用双面覆有导电材料的柔性基板50，优选柔性基板的厚度为10～50μm，本实施例选用厚度为25μm的双面覆铜的聚酰亚胺材料。在柔性基板50的一侧的铜刻蚀出图案100，图案100代表薄膜晶体管的源极、漏极、电容的电极、行电极(数据线)、列电极(扫描线)以及互联的导线等，在柔性基板50的另一侧的铜刻蚀出图案200，图案200代表温度传感器的电极等。
如图5所示，再用胶300保护图案200，在图案200与柔性基板50连接的对应位置处钻孔，孔径优选为10～50μm，然后电镀形成过孔43，并去胶300。
如图6所示，是柔性基板50的俯视图，其中包括第一薄膜晶体管和第二薄膜晶体管。从图中看出，刻蚀柔性基板50上的铜形成的有：第一薄膜晶体管的源极12、漏极11，第二薄膜晶体管的源极22、漏极21，漏极11、21均连接到的行电极(数据线)120，存储电容C1的电极34和存储电容C2的电极44，以及电镀形成的过孔43。其中第一薄膜晶体管的源极12与漏极11之间的沟道宽度为2～20μm，优选为10μm，从而满足了电子皮肤的柔性特征。
结合图1、图5和图6，在刻蚀的图案100上采用磁控溅射的方法形成半导体层，如ZTO、IGZO等，优选的厚度为40～60nm，采用ALD(原子层沉积技术)方法沉积SiOx层，优选厚度为20nm，再采用干法刻蚀工艺形成第一薄膜晶体管的第一绝缘层15和第二薄膜晶体管的第一绝缘层25，采用湿法刻蚀工艺形成第一薄膜晶体管的有源层14和第二薄膜晶体管的有源层24。在第一薄膜晶体管的第一绝缘层15和第二薄膜晶体管的第一绝缘层25上采用PECVD(等离子体增强化学气相沉积法)方法沉积SiNx层，优选厚度为80～200nm，即同时形成了第一薄膜晶体管的第二绝缘层16和第二薄膜晶体管的第二绝缘层26。采用干法刻蚀工艺形成过孔70和过孔80，接着采用磁控溅射的方法形成导电层，在形成的导电层上刻蚀形成的有：第一薄膜晶体管的栅极13、第二薄膜晶体管的栅极23、与栅极13、23相连的列电极(扫描线)120、压力传感器的下电极31、温度传感器的下电极41，其中压力传感器的下电极31通过过孔70与第一薄膜晶体管的源极12相连，压力传感器的下电极31与电极34形成存储电容C1；温度传感器的下电极41通过过孔80与第二薄膜晶体管的源极22相连，也通过过孔43与柔性基板50的下面的温度传感器相连，温度传感器的下电极41与电极44形成存储电容C2。
最后采用PECVD方法形成钝化层60，通过干法刻蚀方法形成压力传感器的敏感区域，采用印刷、喷墨打印的方法形成压力敏感层33，再通过磁控溅射的方法形成压力传感器的上电极32。
温度传感器可以采用堆积方法，但是这种方式的柔韧性较差，因此本发明优选实施例采用如图7所示的温度传感器，其中电极421、422均为温度传感器的连接导线，即都是对应图1中所示的温度传感器的电极42，电极421与第二薄膜晶体管的源极相连。其中温度传感器可以有多种选择，本发明优选实施例中采用热敏电阻45，并且热敏电阻45在平面内与电极421、422相连。
本发明提供的电子皮肤是一种基于氧化物TFT的电子皮肤，该电子皮肤包括柔性基板、氧化物TFT、压力传感器和温度传感器，其中氧化物TFT包括第一薄膜晶体管和第二薄膜晶体管。第一薄膜晶体管和第二薄膜晶体管采用同样的顶栅结构，工艺上一次形成；第一薄膜晶体管的源极与压力传感器相连，第一薄膜晶体管成为压力传感器的信号读出机构，压力信号存储在对应的存储电容中；第二薄膜晶体管的源极通过柔性基板上的过孔与温度传感器相连，第二薄膜晶体管成为温度传感器的信号读出机构，温度变化信号存储在对应的存储电容中。另外，压力传感器和温度传感器位于同一个TFT阵列中，采用同样的扫描读出脉冲，通过行电极(数据线)读出压力变化信号和温度变化信号。
通过本发明的制备方法制备得到的电子皮肤实现了同时具有测量压力和温度的功能，可以用于人体脉搏、心脏跳动、眼压、肌肉运动等的检测，也可以用于体温或环境温度的检测。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的技术人员来说，在不脱离本发明构思的前提下，还可以做出若干等同替代或明显变型，而且性能或用途相同，都应当视为属于本发明的保护范围。

Claims (10)

1.一种电子皮肤，其特征在于，在柔性基板上设有氧化物薄膜晶体管、压力传感器和温度传感器，其中所述压力传感器和所述温度传感器分别位于所述柔性基板的两侧，所述氧化物薄膜晶体管包括第一薄膜晶体管和第二薄膜晶体管，所述压力传感器用于驱动所述第一薄膜晶体管，所述温度传感器用于驱动所述第二薄膜晶体管。
2.根据权利要求1所述的电子皮肤，其特征在于，所述柔性基板的材料是厚度为10～50μm的聚酰亚胺。
3.根据权利要求1所述的电子皮肤，其特征在于，所述第一薄膜晶体管和所述第二薄膜晶体管采用同样的顶栅结构，所述压力传感器和所述温度传感器分别设有对应的存储电容。
4.根据权利要求1至3任一项所述的电子皮肤，其特征在于，所述第一薄膜晶体管和所述第二薄膜晶体管分别包括漏极、源极、栅极、有源层、第一栅极绝缘层和第二栅极绝缘层，其中：
漏极与源极位于同一层，有源层位于对应的漏极与源极所在的层之上且与对应的漏极、源极部分重叠，第一绝缘层覆盖在对应的有源层之上，第二绝缘层覆盖在对应的漏极、源极与第一绝缘层之上，栅极位于对应的第二绝缘层之上；
所述第一薄膜晶体管的源极与所述压力传感器相连，所述第二薄膜晶体管的源极通过所述柔性基板的过孔与所述温度传感器相连。
5.根据权利要求4所述的电子皮肤，其特征在于，所述第一薄膜晶体管和所述第二薄膜晶体管的漏极、源极、栅极采用金属电极、透明导电电极或碳纳米管；所述第一薄膜晶体管和所述第二薄膜晶体管的有源层采用金属氧化物半导体；所述第一薄膜晶体管和所述第二薄膜晶体管的第一绝缘层采用SiOx，所述第一薄膜晶体管和所述第二薄膜晶体管的第二绝缘层采用SiNx。
6.一种电子皮肤的制备方法，其特征在于，在双面覆有导电材料的柔性基板上通过刻蚀、沉积方法形成第一薄膜晶体管、第二薄膜晶体管、压力传感器和温度传感器，其中所述压力传感器和所述温度传感器分别形成于所述柔性基板的两侧。
7.如权利要求6所述的制备方法，其特征在于，具体包括以下步骤：
S1：在双面覆有导电材料的柔性基板的一侧刻蚀出图案A，所述图案A包括第一薄膜晶体管的源极、漏极和第二薄膜晶体管的源极、漏极；
S2：在所述柔性基板的另一侧刻蚀出图案B，所述图案B包括温度传感器的电极；
S3：在所述图案B连接的柔性基板的对应位置钻孔，并电镀钻孔位置，使得所述图案B与所述图案A电连接；
S4：在图案A上形成半导体层，再在所述半导体层上再沉积绝缘层，在所述半导体层上分别刻蚀出第一薄膜晶体管和第二薄膜晶体管的有源层，在所述绝缘层分别刻蚀出第一薄膜晶体管和第二薄膜晶体管的第一绝缘层，再在第一薄膜晶体管和第二薄膜晶体管的第一绝缘层沉积第二绝缘层；
S5：在第二绝缘层上形成导电层，刻蚀出第一薄膜晶体管和第二薄膜晶体管的栅极、以及压力传感器。
8.根据权利要求7所述的制备方法，其特征在于，步骤S4具体包括：
S41：在图案A上采用磁控溅射的方法形成金属氧化物半导体层，再在金属氧化物半导体层上采用原子层沉积方法形成SiOx层；
S42：在SiOx层上采用干法刻蚀工艺分别刻蚀出第一薄膜晶体管和第二薄膜晶体管的第一绝缘层，在金属氧化物半导体层上采用湿法刻蚀工艺分别刻蚀出第一薄膜晶体管和第二薄膜晶体管的有源层；
S43：在第一薄膜晶体管和第二薄膜晶体管的第一绝缘层上采用等离子体增强化学气相沉积法形成第一薄膜晶体管和第二薄膜晶体管的第二绝缘层，并在第二绝缘层与源极的连接对应位置采用干法刻蚀形成过孔。
9.根据权利要求7所述的制备方法，其特征在于，步骤S5具体包括：
S51：在第一薄膜晶体管和第二薄膜晶体管的第二绝缘层上采用磁控溅射的方法形成导电层，刻蚀出第一薄膜晶体管和第二薄膜晶体管的栅极、压力传感器和温度传感器的下电极；
S52：采用等离子体增强化学气相沉积法形成钝化层；
S53：采用干法刻蚀工艺刻蚀出压力传感器的敏感区域，采用印刷或喷墨打印方法形成压力传感器的敏感层，再在敏感层上形成压力传感器的上电极。
10.根据权利要求7至10任一项所述的制备方法，其特征在于，第一薄膜晶体管的源极和漏极之间的间距是2～20μm，第二薄膜晶体管的源极和漏极之间的间距是2～20μm。
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