CN104506180A - 一种高速电平转换电路 - Google Patents

一种高速电平转换电路 Download PDF

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Publication number
CN104506180A
CN104506180A CN201410757761.1A CN201410757761A CN104506180A CN 104506180 A CN104506180 A CN 104506180A CN 201410757761 A CN201410757761 A CN 201410757761A CN 104506180 A CN104506180 A CN 104506180A
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China
Prior art keywords
grid
level
circuit
drain electrode
level transformation
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CN201410757761.1A
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English (en)
Inventor
蒋仁杰
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CHANGSHA JINGJIA MICROELECTRONIC Co Ltd
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CHANGSHA JINGJIA MICROELECTRONIC Co Ltd
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Priority to CN201410757761.1A priority Critical patent/CN104506180A/zh
Publication of CN104506180A publication Critical patent/CN104506180A/zh
Pending legal-status Critical Current

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Abstract

本发明公开了一种高速电平转换电路。电平转换电路是数模混合电路常用的模块,本发明利用数字正反馈,在实现电平转换的同时,加速电平翻转速度,即实现了一种高速电平转换电路。

Description

一种高速电平转换电路
技术领域
本发明主要涉及电平转换电路的设计领域,特指一种高速电平转换电路。
背景技术
对于数模混合信号电路,考虑到功耗、面积等因素,通常会设计多种电压域电路,不同电压域之间通信需要电平转换电路。对于高速数模混合系统,需要成百上千个电平转换电路,此电平转换电路除了完成基本的电压域转换之外,还有一个更重要的任务就是实现高速通信。
发明内容
本发明要解决的问题就在于:针对现有技术存在的技术问题,提出一种高速电平转换电路。
本发明提出的解决方案为:利用数字正反馈,在实现电平转换的同时,加速电平翻转速度,即实现了一种高速电平转换电路。
附图说明
图1是本发明的电路原理示意图。
具体实施方式
以下将结合附图和具体实施对本发明做进一步详细说明。
如图1所示,VDDH是高电平,VDDL是低电平, M1、M2、M3、M4组成高电压域电路, M5、M6、M8、M10、M11与M7、M9、M12组成低电压域电路。M1、M2、M3、M4组成两个反相器串联,作为输入信号IN的缓冲电路,M5二极管连接,调节信号的占空比;M6、M7和M11、M12组成低电压域的缓冲电路;M8、M9、M10组成数字正反馈电路,当输入为IN为低电平时,M6的栅极为低电平,输出OUT为低电平,由于增加了数字正反馈电路,M8栅极为高电平,M10的栅极为低电平,M10导通,使得M2栅极快速充电到高电平,及加速OUT的翻转,从而提高整个电平转换的速度。
综上所述,本电路利用数字正反馈,在实现电平转换的同时,加速电平翻转速度,即实现了一种高速电平转换电路。

Claims (1)

1.一种高速电平转换电路,其特征在于:
PMOS管M1、M3与NMOS管M2、M4组成两个串联的反向器,VDDH为高电平,IN为高电压域输入信号,连接到M1和M2栅极,M1、M2的漏极连接到M3和M4的栅极,M1、M3的源极接VDDH,M2、M4的源极接GND;PMOS管M5、M6、M8、M10、M11与NMOS管M7、M9、M12组成低电压域电路,VDDL为低电平,M5、M8、M10、M11的源极接VDDL,M7、M9、M12的源极接GND,M5栅极、漏极连接到M6的源极,M6、M7的漏极连接到M8、M9、M11、M12的栅极以及M10的漏极,M6、M7的栅极连接到M3、M4的漏极;M8、M9的漏极连接到M10的栅极,M11、M12漏极即输出信号OUT。
CN201410757761.1A 2014-12-12 2014-12-12 一种高速电平转换电路 Pending CN104506180A (zh)

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CN201410757761.1A CN104506180A (zh) 2014-12-12 2014-12-12 一种高速电平转换电路

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CN104506180A true CN104506180A (zh) 2015-04-08

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115276638A (zh) * 2022-09-28 2022-11-01 珠海巨晟科技股份有限公司 一种较强抗干扰电平转换器电路

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6160752A (en) * 1994-01-31 2000-12-12 Kabushiki Kaisha Toshiba Semiconductor memory device
US6184704B1 (en) * 1999-02-08 2001-02-06 Tritech Microelectronics Design method for compensation of process variation in CMOS digital input circuits
CN101888227A (zh) * 2010-07-14 2010-11-17 北京北大众志微系统科技有限责任公司 一种温度不敏感时钟缓冲器及h型时钟树电路
CN102208910A (zh) * 2010-03-31 2011-10-05 上海宏力半导体制造有限公司 电平转换电路
US20130257502A1 (en) * 2012-03-27 2013-10-03 Monolithic Power Systems, Inc. Delay circuit and associated method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6160752A (en) * 1994-01-31 2000-12-12 Kabushiki Kaisha Toshiba Semiconductor memory device
US6184704B1 (en) * 1999-02-08 2001-02-06 Tritech Microelectronics Design method for compensation of process variation in CMOS digital input circuits
CN102208910A (zh) * 2010-03-31 2011-10-05 上海宏力半导体制造有限公司 电平转换电路
CN101888227A (zh) * 2010-07-14 2010-11-17 北京北大众志微系统科技有限责任公司 一种温度不敏感时钟缓冲器及h型时钟树电路
US20130257502A1 (en) * 2012-03-27 2013-10-03 Monolithic Power Systems, Inc. Delay circuit and associated method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115276638A (zh) * 2022-09-28 2022-11-01 珠海巨晟科技股份有限公司 一种较强抗干扰电平转换器电路

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Application publication date: 20150408