CN104505440A - 一种双面太阳能电池的制备方法 - Google Patents
一种双面太阳能电池的制备方法 Download PDFInfo
- Publication number
- CN104505440A CN104505440A CN201410671004.2A CN201410671004A CN104505440A CN 104505440 A CN104505440 A CN 104505440A CN 201410671004 A CN201410671004 A CN 201410671004A CN 104505440 A CN104505440 A CN 104505440A
- Authority
- CN
- China
- Prior art keywords
- silicon layer
- type
- double
- preparation
- solar battery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 80
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 78
- 239000010703 silicon Substances 0.000 claims abstract description 78
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 230000003667 anti-reflective effect Effects 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 12
- 238000007650 screen-printing Methods 0.000 claims abstract description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 56
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 48
- 230000008021 deposition Effects 0.000 claims description 12
- 239000002002 slurry Substances 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 238000002834 transmittance Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 claims description 2
- 238000003892 spreading Methods 0.000 claims description 2
- 230000007480 spreading Effects 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 13
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 238000000926 separation method Methods 0.000 abstract description 5
- 230000004298 light response Effects 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 126
- 239000010408 film Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410671004.2A CN104505440B (zh) | 2014-11-21 | 2014-11-21 | 一种双面太阳能电池的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410671004.2A CN104505440B (zh) | 2014-11-21 | 2014-11-21 | 一种双面太阳能电池的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104505440A true CN104505440A (zh) | 2015-04-08 |
CN104505440B CN104505440B (zh) | 2017-05-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201410671004.2A Active CN104505440B (zh) | 2014-11-21 | 2014-11-21 | 一种双面太阳能电池的制备方法 |
Country Status (1)
Country | Link |
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CN (1) | CN104505440B (zh) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202423352U (zh) * | 2011-12-08 | 2012-09-05 | 嘉兴学院 | 一种硅基双结叠层太阳电池 |
US20130082344A1 (en) * | 2011-09-30 | 2013-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
-
2014
- 2014-11-21 CN CN201410671004.2A patent/CN104505440B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130082344A1 (en) * | 2011-09-30 | 2013-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
CN202423352U (zh) * | 2011-12-08 | 2012-09-05 | 嘉兴学院 | 一种硅基双结叠层太阳电池 |
Also Published As
Publication number | Publication date |
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CN104505440B (zh) | 2017-05-24 |
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Address after: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20180213 Address after: 322009 Zhejiang city in Jinhua Province town of Yiwu City, Su Fuk Road No. 126 Co-patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Patentee after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |