CN104502637B - Method for reconditioning test head module - Google Patents
Method for reconditioning test head module Download PDFInfo
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- CN104502637B CN104502637B CN201410769026.2A CN201410769026A CN104502637B CN 104502637 B CN104502637 B CN 104502637B CN 201410769026 A CN201410769026 A CN 201410769026A CN 104502637 B CN104502637 B CN 104502637B
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- interfacial material
- thermal interfacial
- head module
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- thermal
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- 238000000034 method Methods 0.000 title claims abstract description 28
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- 238000000465 moulding Methods 0.000 claims description 26
- 239000007788 liquid Substances 0.000 claims description 19
- 230000004888 barrier function Effects 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
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- 239000011777 magnesium Substances 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910000756 V alloy Inorganic materials 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910001093 Zr alloy Inorganic materials 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052699 polonium Inorganic materials 0.000 claims description 2
- HZEBHPIOVYHPMT-UHFFFAOYSA-N polonium atom Chemical compound [Po] HZEBHPIOVYHPMT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- PMTRSEDNJGMXLN-UHFFFAOYSA-N titanium zirconium Chemical compound [Ti].[Zr] PMTRSEDNJGMXLN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 4
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- 230000008018 melting Effects 0.000 abstract description 2
- 230000007704 transition Effects 0.000 abstract description 2
- 238000003825 pressing Methods 0.000 abstract 1
- 238000012956 testing procedure Methods 0.000 description 20
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- 239000005030 aluminium foil Substances 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
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- Investigating Or Analyzing Materials Using Thermal Means (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
The invention discloses a method for reconditioning a test head module, which comprises the following steps: providing a test head module, wherein the test head module comprises at least one notch arranged on the working surface of the test head; and a thermal interface material embedded in the recess, wherein a solid-liquid phase transition temperature of the thermal interface material is between an operating temperature of the test head module and a melting point of the test head. Thereafter, heating to melt the thermal interface material; providing a mold to the thermal interface material; applying pressure to mold the thermal interface material; cooling the thermal interface material; and removing the mold.
Description
Technical field
The present invention relates to a kind of dressing method for testing head module, and more particularly to a kind of hot boundary including that can remold shape
The test head module of facestock material and the method redressed.
Background technology
In the manufacturing process of electronic component (for example, integrated circuit component, chip or tube core etc.), it will usually use electronics
Component test set, with the performance or function of testing electronic element.
Existing electronic component testing apparatus generally comprises contact arm (handler), to adsorb and transport electronic component.
The top of this contact arm is provided with test head module.In order that electronic component is tested within specified temperatures, measuring head is utilized
Thermoregulator in module carries out temperature control.In addition, in order to lift the contact adherence between measuring head and electronic component
And heat conductivity (thermal conductivity), thermal interfacial material can be set between measuring head and electronic component
(thermal interface material,TIM)。
As thermal interfacial material is repeatedly contacted and peeled off with electronic component, the surface of thermal interfacial material can produce scar or
Defect.Consequently, it is possible to the good contact of generation and heat transfer are will be unable between thermal interfacial material and electronic component, and then can not essence
The test temperature of quasi- control electronics., can be by hot boundary generally after by specific access times to avoid above mentioned problem
Facestock material pottery eliminates old for new service.However, will thus cause the raising of production cost.Therefore need to seek in the art into
The improvement of one step.
The content of the invention
To solve the above problems, one embodiment of the invention discloses a kind of method for redressing test head module, bag
Include:There is provided one and test head module, this test head module includes:Measuring head, including at least a recess is arranged at the work of measuring head
Face;And thermal interfacial material, it is embedded in recess, wherein the solid-liquid inversion temperature of thermal interfacial material is between test head mould
Between the operation temperature of block and the fusing point of measuring head.Afterwards, heat to melt thermal interfacial material;Mould is provided to hot interface material
Material;Apply pressure, to mold (coining) thermal interfacial material;Cool down thermal interfacial material;And remove mould.
It is cited below particularly to go out to be preferable to carry out for above and other purpose, feature and the advantage of the present invention can be become apparent
Example, is described in detail below:
Brief description of the drawings
Fig. 1 is the test head module of some embodiments of the present invention and the diagrammatic cross-section of chip packing-body;
Fig. 2A-Fig. 2 C will test each manufacture craft stage that head module is redressed for some embodiments of the present invention
Diagrammatic cross-section;
Fig. 3 A- Fig. 3 B are the diagrammatic cross-section of the mould of some embodiments of the present invention;
Fig. 4 redresses the diagrammatic cross-section of the test head module of step for the process of some embodiments of the present invention;
Fig. 5 is the diagrammatic cross-section of the test head module of some embodiments of the present invention;
Fig. 6 A- Fig. 6 C are the diagrammatic cross-section of the test head module of some embodiments of the present invention.
Symbol description
100~test head module
102~measuring head
102S~working face
104~thermoregulator
106~diffused barrier layer
108~pressure regulator
110th, 110a, 110b~thermal interfacial material
110S~operation surface
120th, 120a, 120b~recess
120V~right angle
120X~salient angle
120Y~corner cut
120Z~fillet
122nd, 124a, 124b~depressed part
140~mould
140S~die surface
142a, 142b~protuberance
150~chip packing-body
152~substrate
154~chip
156~external electrical connection
158~underfill
160~inside electrical connection section
200~first direction
300~molding step
T1, T2~thickness
Embodiment
It is cited below particularly to go out to be preferable to carry out to enable the above and other purpose, feature, advantage of the present invention to become apparent
Example, and coordinate appended schema, it is described in detail below.However, any those of ordinary skill in the art will
Understand various features structure in the present invention to be merely to illustrate, and not according to scaling.In fact, in order that explanation is more clear
It is clear, it can arbitrarily increase and decrease the relative size ratio of various features structure.In specification in full and in all schemas, identical is with reference to mark
Number refer to identical feature structure.
The many different implementations of following discloses or example carry out the different characteristic of the present invention, describe specific below
Element and its arrangement embodiment to illustrate the present invention.These certain embodiments are only to illustrate and should not limit this hair with this
Bright scope.It is formed at for example, mentioning fisrt feature in the description on second feature, it includes fisrt feature and the second spy
It is the embodiment directly contacted to levy, and the implementation for having other features between fisrt feature and second feature in addition is also included in addition
Example, that is, fisrt feature and second feature and non-direct contact.
The present invention provides a kind of method tested head module and its redressed, and Fig. 1 is to show one according to the present invention
The test head module 100 of a little embodiments and the diagrammatic cross-section of chip packing-body 150.
Fig. 1 is refer to, chip packing-body 150 includes substrate 152, chip 154, external electrical connection 156, underfill material
Material 158 and internal electrical connection section 160.Chip 154 be formed on the upper surface of substrate 152 and by internal electrical connection section 160 with
Substrate 152 is electrically connected.External electrical connection 156 is formed on the lower surface of substrate 152, to electrically connect substrate 152 to outside
Circuit (circuit board of such as test).Underfill 158 is formed between substrate 152 and chip 154, to fixed base
The relative position of plate 152 and chip 154.It should be noted that, although in the drawings, chip packing-body 150 includes two chips
154.However, in other embodiments, chip packing-body 150 may include a chip or the chip of more than three.
Fig. 1 is still refer to, test head module 100 includes the measuring head 102 with recess 120, thermoregulator 104, pressure
Draught control mechanism 108, thermal interfacial material 110 are embedded in recess 120, and thermal interfacial material 110 is in face of chip packing-body 150
Direction has operation surface 110S.In the present embodiment, selective (optional) diffused barrier layer 106 is may also include to set
Between measuring head 102 and thermal interfacial material 110.Before carrying out testing procedure, test head module 100 along a first direction 200
Moved towards chip packing-body 150, as shown in Figure 1.When carrying out testing procedure, wherein the hot interface material of test head module 100
The alignment of material 110 and the directly chip 154 of contact chip packaging body 150.
When carrying out testing procedure, pressure regulator 108 applies a pressure to measuring head 102, to ensure thermal interfacial material
110 adherences of the contact with chip 154.Pressure regulator 108 may include any pressue device, will not be described in detail herein.
When carrying out testing procedure, thermoregulator 104 can apply a heat energy to chip 154, for specifically operating
At a temperature of implement testing procedure.This operation temperature is different with test event and chip species, in certain embodiments, behaviour
Make temperature between 25-130 DEG C.In further embodiments, operation temperature can be between 70-90 DEG C.Work as testing procedure
After end, thermoregulator 104 can remove heat energy from chip 154, for cooled wafer 154.Thermoregulator 104 may include to appoint
The combination of what heater and cooler, is also no longer described in detail herein.
Measuring head 102 has a working face 102S in the direction in face of chip packing-body 150.As shown in figure 1, to accommodating
The recess 120 of thermal interfacial material 110 is arranged at the working face 102S of measuring head 102.When carrying out testing procedure, due to measuring head
102 are subjected to the pressure from pressure regulator 108 and the heat energy from thermoregulator 104, therefore measuring head 102 is optional
Use dystectic hard metal.In certain embodiments, the material of measuring head 102 may include copper, steel, tungsten, other suitable gold
Belong to alloy or the combination of material or above-mentioned material.In certain embodiments, the fusing point of measuring head 102 between 1000-1600 DEG C it
Between.
When carrying out testing procedure, the upper surface of the direct contact chips 154 of operation surface 110S of thermal interfacial material 110.
The major function of thermal interfacial material 110 is, by contacting transferring heat energy, to make heat energy import chip 154 or export from chip 154.
Therefore, thermal interfacial material 110 is generally configured with excellent heat conductivity, and it is operated between surface 110S and the upper surface of chip 154
It is preferably provided with good contact adaptation.
In the prior art, the working face of measuring head is a flat surface, and thermal interfacial material physically fixes (example
Such as, thermal interfacial material is aluminium foil and cladding measuring head) on this working face.In certain embodiments, it is above-mentioned physically solid
Surely can also be that together on this working face, but this mode may reduce heat transfer efficiency by thermal interfacial material with polymer latex.
In other embodiments, also can be by the direct contact measured thing of measuring head, without configuring thermal interfacial material.Existing thermal interfacial material
May include macromolecule heat sink material (for example resinae radiating paster or thermal grease), hard metal material (for example metal block material or
Sheet material) or soft metal material (such as metal foil).However, these above-mentioned thermal interfacial materials respectively have its own shortcoming.For example:High score
The heat conductivity of sub- heat sink material is poor compared with metal, it is impossible to is accurately controlled operation temperature, or can not reach finger in a short time
Fixed operation temperature.Furthermore, macromolecule heat sink material quality is soft compared with metal, after usage cycles for several times, and it operates surface
Deformation can be caused because of pressure, cause contact adaptation of the thermal interfacial material with chip to be deteriorated, it is therefore necessary to often make pottery eliminate with
Trade-in.In addition, under the operation temperature of testing procedure, macromolecule heat sink material may be melted or decomposed because heated, be entered
And attach to chip surface and pollute.On the other hand, because multiple chips on chip packing-body in the fabrication process
Height error would generally be produced, causes and the upper surface of not all chip all has identical level height.Furthermore, based on design
Demand, the chip on same chip packaging body may also have different thickness.For hard metal material, its
Case hardness is high and does not have pliability, therefore it operates surface can not produce good contact with each chip, will cause core
The heated inequality of piece packaging body.Furthermore, if in order that hard metal material contacts good with chip and applies excessive pressure, will lead
Chip is caused to produce slight crack or breakage.In addition, the surface of hard metal material needs monoblock (piece) more once producing damage or deforming
Change, will so improve manufacture craft cost.In addition, though soft metal material has heat conductivity and pliability concurrently, but it is due to
Its very thin thickness, after usage cycles for several times, it operates surface to cause to deform, wear and tear or perforate because of pressure, must
It must often make pottery and eliminate old for new service, also have harmful effect to manufacture craft cost.
To solve the above problems, the present invention propose it is a kind of can moulding thermal interfacial material, its solid-liquid conversion temperature again
Spend between the operation temperature of test head module and the fusing point of measuring head.Describe in detail as follows.
In the present invention, the solid-liquid inversion temperature of thermal interfacial material 110 have to be larger than the operation temperature of test head module
Degree, can so make thermal interfacial material 110 maintain the state of solid phase under the operation temperature of testing procedure, and then avoid polluting core
Piece 154 or whole chip packing-body 150.Furthermore, the solid-liquid inversion temperature of thermal interfacial material 110 is necessarily less than test
First 102 fusing point, thus, you can on the premise of the shape of measuring head 102 is not influenceed, thermal interfacial material 110 is moulded
Shape, when particularly carrying out first moulding or again moulding to the operation surface 110S of thermal interfacial material 110, can avoid high temperature from influenceing
The shape of measuring head 102.
In certain embodiments, first moulding step may include thermal interfacial material 110 being heated to liquid phase or molten condition
Insert afterwards in recess 120, then thermal interfacial material 110 is cooled to the state of solid phase and it is shaped.In other embodiments,
First moulding step, which may include to insert the thermal interfacial material 110 of solid phase, is again heated to liquid phase or molten condition in recess 120, connect
And thermal interfacial material 110 is cooled to the state of solid phase and it is shaped again.After foregoing moulding step, thermal interfacial material
110 conformally (conformally) be embedded in recess 120, as shown in Figure 1.It is worth noting that, above-mentioned is first moulding
The step of step refers to thermal interfacial material 110 being embedded in recess 120 of sky.
Thermal interfacial material 110 may include (but not limited to) metal, the thermal plastic high polymer of the inserts containing thermal conductivity, phase change
Material or combinations of the above.Suitable metal such as indium (In), lead (Pb), tin (Sn), silver-colored (Ag), lithium (Li), cadmium (Cd), zinc
(Zn), aluminium (Al), magnesium (Mg), polonium (Po), bismuth (Bi) or above-mentioned alloy etc..Particularly, if solid phase-liquid of above-mentioned simple metal
Transition temperature is too high (for example:Fine silver, fine aluminium, pure magnesium), operational inconvenience is likely to result in, now can be by golden with other
The mode that category fuses into alloy forms thermal interfacial material 110, to reduce the solid-liquid inversion temperature of Integral alloy, and makes heat
The solid-liquid inversion temperature of boundary material 110 is between the operation temperature of test head module and the fusing point of measuring head 102.
In addition, suitable thermal plastic high polymer may include, such as:Polyimides (poly imide, PI) etc..Suitable thermal conductivity filling
Material may include, for example:Indium, lead, tin, silver, lithium, cadmium, zinc, aluminium, magnesium, copper, gold, platinum or above-mentioned alloy etc..In some embodiments
In, thermal interfacial material 110 is indium or indium alloy.
It is noted that selected the need for the visual practical application of solid-liquid inversion temperature of thermal interfacial material 110,
As long as this solid-liquid inversion temperature is between the operation temperature of test head module and the fusing point of measuring head 102.One
In a little embodiments, operation temperature is between 70-90 DEG C, and the fusing point of measuring head 102 is about 1600 DEG C, therefore thermal interfacial material
110 solid-liquid inversion temperature can be between about 90-1600 DEG C.In other embodiments, operation temperature is between 25-130
Between DEG C, and the fusing point of measuring head 102 is about 1100 DEG C, therefore the solid-liquid inversion temperature of thermal interfacial material 110 can be between
Between about 130-1100 DEG C.For the energy needed for saving moulding step and time, the solid-liquid conversion of thermal interfacial material 110
Temperature can be between about 130-360 DEG C.
Easily occur during the moulding step of thermal interfacial material 110, between measuring head 102 and thermal interfacial material 110 former
Son exchanges or chemically reacted.Consequently, it is possible to intermetallic compound (intermetallic compound, IMC) will be produced, and then
The chemical composition and physicochemical characteristics of measuring head 102 and thermal interfacial material 110 is caused to be changed.
In order to avoid the generation of intermetallic compound, optionally (optionally) diffused barrier layer 106 can be arranged at
Between measuring head 102 and thermal interfacial material 110, as shown in Figure 1.The fusing point of diffused barrier layer 106 can be higher than thermal interfacial material 110
Solid-liquid inversion temperature.Consequently, it is possible in the moulding step of thermal interfacial material 110, diffused barrier layer 106 will not be because
It is heated and causes deformation.Furthermore, diffused barrier layer 106, which can be selected not having for measuring head 102 and thermal interfacial material 110, appoints
What chemically active material.Consequently, it is possible to can avoid producing intermetallic compound, and then keep measuring head 102 and hot interface material
Expect 110 original chemical compositions and physicochemical characteristics.
Suitable material is conformally deposited on the bottom of recess 120 and side wall using suitable manufacture craft,
To form diffused barrier layer 106 in recess 120.The suitable material of diffused barrier layer 106 may include titanium, tantalum, titanium nitride, nitridation
Tantalum, titanium-zirconium alloy, titanium nitride zirconium, nickel, nickel-vanadium alloy or combinations of the above.Suitable manufacture craft may include physical vapour deposition (PVD)
(PVD), chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD), sputter (sputter) or above-mentioned group
Close.
In addition, (texturing) processing can be roughened to the surface of diffused barrier layer 106 towards thermal interfacial material 110,
To form various micro-structurals (not illustrated in figure), the tackness between measuring head 102 and thermal interfacial material 110 is thus lifted.Lift
For example, micro-structural may include the circular cone of periodic arrangement, pyrometric cone, quadrangular pyramid, dome bell cone, cylinder, hemisphere, vertical
The raised or sunken micro-structural such as cube, and spacing between the three-dimensional size and adjacent microstructures of each micro-structural can
To be micron order or grade.Suitable roughening treatment may include Wet-type etching or dry-etching or impressing
Or other physical roughening modes (embossing).Because the surface of diffused barrier layer 106 has micro-structural, therefore it can increase
Plus the contact area and bonding strength of diffused barrier layer 106 and thermal interfacial material 110.
The present invention also provides a kind of method for redressing test head module, and Fig. 2A-Fig. 2 C are to show according to this hair
The diagrammatic cross-section by each manufacture craft stage that head module is redressed is tested of some bright embodiments.To simplify
See, wherein being same as Fig. 1 part, identical label will be used and repeated no more.
After multiple usage cycles, the operation surface 110S of thermal interfacial material 110 can cause to become because of pressure
Shape.Fig. 2A is refer to, depressed part 122 is produced on the operation surface 110S of thermal interfacial material 110.Depressed part 122 may be made
It is deteriorated into contact adaptation of the thermal interfacial material 110 with chip.As it was previously stated, in the prior art, no matter using any heat
Boundary material, once the operation surface of thermal interfacial material because of deformation can not with chip is closely sealed contacts, must just make pottery to eliminate and be changed with old
It can not newly reuse.
In order to extend the service life of thermal interfacial material 110, and the purpose of reuse is reached, the present invention also provides a kind of
The method that head module is redressed will be tested.Fig. 2 B are refer to, in the present embodiment, the method that head module is redressed will be tested
Comprise the following steps:
(a) heat to melt thermal interfacial material;
(b) mould is provided to thermal interfacial material;
(c) pressure is applied, to mold (coining) thermal interfacial material;
(d) thermal interfacial material is cooled down;And
(e) mould is removed.
In step (a), thermal interfacial material 110 is heated to a temperature, and thermal interfacial material 110 liquid phase is presented or molten
Melt state, follow-up again moulding step is carried out with profit.In certain embodiments, said temperature is about thermal interfacial material 110
Solid-liquid inversion temperature, and make thermal interfacial material 110 that liquid phase or molten condition is presented.As previously described, because hot interface material
The solid-liquid inversion temperature of material 110 is less than the fusing point of measuring head 102 and diffused barrier layer 106, even if therefore by hot interface material
Material 110 is heated to liquid phase or molten condition, will not also change the shape of measuring head 102 and diffused barrier layer 106.Furthermore, due to
The inactivity of diffused barrier layer 106, therefore intermetallic compound will not be produced, it will not also change measuring head 102 and hot interface
The original chemical composition of material 110 and physicochemical characteristics.
There is provided the operation surface 110S that mould 140 contacts thermal interfacial material 110 in step (b) and (c), and apply pressure
Power is molded (coining) step 300, for thermal interfacial material 110 is again moulding.As shown in Figure 2 B, molded
(coining) during step 300, mould 140 is moved towards thermal interfacial material 110, for make the surface 140S of mould 140 directly with
The operation surface 110S contacts of thermal interfacial material 110.It will be understood that in order to ensure mould 140 is in molding (coining) step
It will not be deformed in rapid, solid-liquid inversion temperature of the fusing point also greater than thermal interfacial material 110 of mould 140.
In step (d) and (e), cooling thermal interfacial material 110 makes after its setting, you can remove mould 140.Such as Fig. 2 C institutes
Show, the step of by redressing after, can turn into flat and not by the operation surface 110S of thermal interfacial material 110 is again moulding
Surface with any depressed part.
As shown in figures 2 a-c, in the present embodiment is the step of redressing, measuring head 102 is removed, other are utilized
Heater and pressue device thermal interfacial material 110 is heated and pressurizeed.It is noted that in other embodiments, also may be used
Measuring head 102 is not removed, directly heated and cooled down using Fig. 1 thermoregulator 104, and directly utilize Fig. 1 pressure
Draught control mechanism 108 applies pressure, the step of to carry out above-mentioned redress.
Fig. 3 A are the diagrammatic cross-section for showing the mould 140 according to some embodiments of the present invention.Fig. 3 A are refer to,
In the present embodiment, mould 140 has flat surface 140S, therefore can be by the operation surface 110S with depressed part 122 again
It is moulding into flat surface.
However, in other embodiments, the operation surface 110S of thermal interfacial material 110 can also coordinate the chip on packaging body
Surface profile carry out it is moulding, to reach the purpose fully fitted (when particularly having multiple highly different chips on packaging body),
Therefore, used mould 140 can also have uneven surface 140S, for by the operation surface of thermal interfacial material 110
The moulding shapes (as shown in Figure 3 B) complementary into chip surface profile of 110S.In figure 3b, mould 140 has convex-concave surface
140S, wherein convex-concave surface 140S include the protuberance 142a and 142b of two different heights.In the present embodiment, using with
The step of convex-concave surface 140S mould 140 carries out above-mentioned redress, can be by the operation surface 110S weights of thermal interfacial material 110
It is new moulding into the shape complementary with surface 140S.An embodiment is invented below to be illustrated.
Fig. 4 is the section for showing the test head module that step is redressed according to the process of some embodiments of the present invention
Schematic diagram.Test head module in Fig. 4 carries out redressing step using the mould 140 as depicted in Fig. 3 B.It is herein simplification
Diagram, only shows measuring head 102 in Fig. 4.As shown in figure 4, will have two by again moulding operation surface 110S
The depressed part 124a and 124b of different depth, the depth of wherein these depressed parts are same as convex-concave surface 140S (as Fig. 3 B are painted
Show) protuberance 142a and 142b height.Herein to simplify schema, the protuberance for only showing two different heights is formed at
On convex-concave surface 140S.However, having usually intellectual in this area it should be appreciated that can be if necessary in shape on convex-concave surface 140S
Into any amount and with arbitrary shape protuberance and/or depressed part.In other words, the operation surface of thermal interfacial material 110
110S is not limited to flat surface, and operation surface 110S may also comprise the concavo-convex table of the protuberance with any quantity and shape
Face.
It is worth noting that, for the same chip packaging body of the chip with different height, or it is highly different many
Individual chip packing-body, prior art is only capable of the thermal interfacial material (for example, macromolecule heat sink material) using quality dead-soft, otherwise without
Method is tested in a batch of testing procedure.But for the macromolecule heat sink material of quality dead-soft, its heat is passed
The property led is poor compared with the hard heat sink material such as metal.However, the section Example according to the present invention, uses the mould with convex-concave surface
Tool, the surface undulation (topology) of demand, arbitrarily the operation surface of adjustment thermal interfacial material that can be according to application.So
One, even with the metal that heat conductivity is preferred but quality is harder as thermal interfacial material, for different height
The same chip packaging body of chip, or highly different multiple chip packing-bodies, also can be in a batch of testing procedure
Tested.
Fig. 5 illustrates the diagrammatic cross-section of the test head module of another embodiment of the present invention.As shown in figure 5, measuring head 102
Working face 102S on can be set two recesses 120a and 120b.The thermal interfacial material 110a thickness being embedded in recess 120a is
T1, the thermal interfacial material 110b thickness being embedded in recess 120b is T2, and wherein T2 is more than T1, and thermal interfacial material 110a is different from
Thermal interfacial material 110b.In the present embodiment, measuring head 102 divides into the test zone of two independent operations, and utilizes heat
The material and difference in thickness of boundary material, make the control of the two test zones in different operation temperatures.Therefore, it is possible to same
The testing procedure of different operating temperature is carried out in the testing procedure of batch.Herein to simplify schema, two recesses are only shown.So
And, have usually intellectual in this area it should be appreciated that being formed the need for visual test on the working face 102S of measuring head 102
Any amount and the recess with suitable shape, with the chip of correspondence institute pretest.
From the foregoing, it will be observed that the section Example according to the present invention, demand that can be according to application, will include different materials and/
Or the thermal interfacial material of thickness is embedded in each recess respectively, for same measuring head to be divided into multiple test sections
Domain.Consequently, it is possible to which the flexibility ratio (flexibility) of testing procedure can be increased, time and the cost of testing procedure can be also saved.
Although it is worth noting that, the recess 120 depicted in Fig. 1-Fig. 5 is in working face 102S sidewall edge (lip
Top) there is a right angle 120V (being only illustrated in Fig. 5), but in other embodiments, recess 120 is in working face 102S side wall
Edge may include other shapes (as shown in Fig. 6 A- Fig. 6 C).Fig. 6 A- Fig. 6 C illustrate the test head mould of the other embodiment of the present invention
The diagrammatic cross-section of block.It is herein simplified illustration, only shows measuring head 102.From Fig. 6 A- Fig. 6 C, recess 120 is in work
Face 102S sidewall edge can have, for example:Salient angle (as shown in Figure 6A), corner cut (as shown in Figure 6B) or fillet are (such as Fig. 6 C institutes
Show).Illustrate further, in fig. 6, recess 120 has salient angle 120X in working face 102S sidewall edge.Salient angle 120X
Contribute to physical fixed thermal interfacial material 110, make thermal interfacial material 110 will not self-test first 102 come off.In Fig. 6 B and Fig. 6 C
In, recess 120 has corner cut 120Y and fillet 120Z respectively in working face 102S sidewall edge.Corner cut 120Y and fillet 120Z
The outside bore of recess 120 is set to be more than internal bore, so that mould 140 enters recess 120 in molding (coining) step
In.
Present invention proposition is a kind of including that can remold the test head module of the thermal interfacial material of shape, wherein the hot boundary of shape can be remolded
The solid-liquid inversion temperature of facestock material is between the operation temperature of test head module and the fusing point of measuring head.The present invention is also
Propose it is a kind of will test the method that redresses of head module, test head module include it is above-mentioned can moulding thermal interfacial material again,
Thermal interfacial material is melted by heating, and it is using mould that strained operation surface is again moulding.
Compared to prior art, test head module and general provided by the present invention including the thermal interfacial material of shape can be remolded
Its method redressed, at least tool have the advantage that:
(1) thermal interfacial material provided by the present invention, can be by heating and molding (coining) step after deformation or abrasion
It is rapid again moulding, it is not necessary to which that often pottery eliminates old for new service, therefore can greatly improve the service life of thermal interfacial material and save into
This.
(2) it is provided by the present invention the step of redress, it can directly utilize the thermoregulator and pressure in test device
Draught control mechanism heats to thermal interfacial material, cools down and pressurizeed, high with existing survey control equipment compatibility, is not necessary to change or buy more volume
External equipment.Therefore, extra-pay will not be produced.
(3) in the step of redressing, the mould with flat surfaces or convex-concave surface is visually needed to use.Therefore,
The surface undulation (topology) of demand, arbitrarily the operation surface of adjustment thermal interfacial material that can be according to application.For tool
There are the same chip packaging body of the chip of different height, or highly different multiple chip packing-bodies, also can be in same batch
Testing procedure in tested.
(4) demand that can be according to application, multiple test zones are divided into by same measuring head.Therefore, survey can be increased
The rapid flexibility ratio of try, can also save time and the cost of testing procedure.
(5) when thermal interfacial material composition or chemical property change (for example, thermal interfacial material oxidation) when, it is only necessary to by itself plus
Heat fusing, you can taken out easily in self-test head.In addition, when measuring head is damaged or eliminated and changes, if thermal interfacial material still can be used
And do not go bad, thermal interfacial material heating melting can also be taken out, reinstall to put and reused on new measuring head.For cost
For expensive thermal interfacial material, this recycling step can reduce the expense expenditure for purchasing thermal interfacial material.
In summary, test head module provided by the present invention including the thermal interfacial material of shape can be remolded and by it again
The method of finishing, can be substantially improved the service life of thermal interfacial material, and can improve the flexibility ratio of testing procedure, efficiency, enter
And time and expense needed for reducing testing procedure.
Although disclosing the present invention with reference to several of the above preferred embodiment, but it is not limited to the present invention, any
Those of ordinary skill in the art, without departing from the spirit and scope of the present invention, can make arbitrary change and profit
Decorations, therefore protection scope of the present invention should be by being defined that the claim enclosed is defined.
Claims (11)
1. a kind of method for redressing test head module, including:
The test head module of offer one, the test head module, including:
Measuring head, including an at least recess, are arranged at a working face of the measuring head;And
Thermal interfacial material, is embedded in an at least recess, wherein the solid-liquid inversion temperature of the thermal interfacial material is between this
Test between an operation temperature of head module and the fusing point of the measuring head;
Heat to melt the thermal interfacial material;
A mould is provided to the thermal interfacial material;
Apply a pressure, to mold (coining) thermal interfacial material;
Cool down the thermal interfacial material;And
Remove the mould;
Wherein, when carry out one test head module redress when, a temperature redressed between the thermal interfacial material solid phase-
It is between liquid phase inversion temperature and the fusing point of the measuring head, the thermal interfacial material is again moulding.
2. as claimed in claim 1 will test the method that head module is redressed, the wherein mould has a convex-concave surface, and
After the thermal interfacial material is cooled down, the operation surface has the surface undulation (topology) complementary with the convex-concave surface.
3. as claimed in claim 1 will test the method that head module is redressed, the wherein thermal interfacial material includes metal.
4. the method that redresses of head module will be tested as claimed in claim 3, wherein the metal include indium, lead, tin, silver,
Lithium, cadmium, zinc, aluminium, magnesium, polonium, bismuth or above-mentioned alloy.
5. as claimed in claim 1 will test the method that head module is redressed, the wherein thermal interfacial material includes containing heat conduction
The thermal plastic high polymer of property inserts.
6. the method that redresses of head module will be tested as claimed in claim 5, wherein the thermal conductivity inserts include indium,
Lead, tin, silver, lithium, cadmium, zinc, aluminium, magnesium, copper, gold, platinum or above-mentioned alloy.
7. as claimed in claim 1 will test the method that head module is redressed, the wherein thermal interfacial material includes metal, contained
The combination of the thermal plastic high polymer, phase-transition material of thermal conductivity inserts.
8. as claimed in claim 1 will test the method that head module is redressed, in addition to diffused barrier layer, the survey is arranged at
Try between head and the thermal interfacial material, wherein the fusing point of the diffused barrier layer is changed higher than the solid-liquid of the thermal interfacial material
Temperature.
9. the method that redresses of head module will be tested as claimed in claim 8, wherein the diffused barrier layer include titanium, tantalum,
Titanium nitride, tantalum nitride, titanium-zirconium alloy, titanium nitride zirconium, nickel, nickel-vanadium alloy or combinations of the above.
10. as claimed in claim 1 will test the method that head module is redressed, wherein an at least recess is in the working face
Sidewall edge have a corner cut, fillet or salient angle.
11. as claimed in claim 1 will test the method that head module is redressed, the wherein thermal interfacial material includes an operation
Surface, wherein the operation surface include having depressed part, protuberance or combinations of the above.
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TWI752563B (en) * | 2020-07-24 | 2022-01-11 | 鴻勁精密股份有限公司 | Connecting apparatus and handler having the same |
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CN2916925Y (en) * | 2006-05-15 | 2007-06-27 | 致茂电子股份有限公司 | Contact device for testing electronic component |
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TWI564578B (en) | 2017-01-01 |
CN104459212A (en) | 2015-03-25 |
CN104502637A (en) | 2015-04-08 |
TW201621334A (en) | 2016-06-16 |
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Address after: Room 301, 2537 Jinke Road, Zhangjiang High Tech Park, Pudong New Area, Shanghai 201203 Patentee after: Shanghai Zhaoxin Semiconductor Co.,Ltd. Address before: Room 301, 2537 Jinke Road, Zhangjiang hi tech park, Shanghai 201203 Patentee before: VIA ALLIANCE SEMICONDUCTOR Co.,Ltd. |