CN108447795B - Bonding method of LED wafer - Google Patents
Bonding method of LED wafer Download PDFInfo
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- CN108447795B CN108447795B CN201810340674.4A CN201810340674A CN108447795B CN 108447795 B CN108447795 B CN 108447795B CN 201810340674 A CN201810340674 A CN 201810340674A CN 108447795 B CN108447795 B CN 108447795B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/03011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
- H01L2224/03015—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for aligning the bonding area, e.g. marks, spacers
Abstract
The invention discloses a bonding method of an LED wafer, which comprises the following steps: providing a substrate; growing an LED wafer on the surface of the substrate, and forming a first bonding structure on the surface of the LED wafer; providing a back plate; arranging a bonding layer on the surface of the back plate, and enabling the surface of the bonding layer to form a second bonding structure which can be bonded with the first bonding structure; and aligning the LED wafer with the bonding layer, and bonding the first bonding structure and the second bonding structure. The technical scheme of the invention can improve the utilization rate of the back plate.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to a bonding method of an LED wafer.
Background
As technology has evolved and advanced, micro leds have exhibited many advantages over OLEDs. For example, the micro LEDs have smaller LED chips and longer lifetimes, and are far superior to OLEDs in terms of module thickness, power consumption, brightness, screen response time, resolution, display effect, and the like. Thus, micro leds are a very competitive technology. However, in the manufacturing process of the micro LED, there is a problem that the LED chip needs to be accurately positioned to the back plate. At present, in order to solve such a problem, it is common practice to provide alignment marks on the back plate and the substrate to achieve accurate positioning using the alignment marks. However, in this manner, the alignment marks take up valuable space on the backplane, resulting in poor utilization of the backplane.
Disclosure of Invention
The invention mainly aims to provide a bonding method of an LED wafer, aiming at improving the utilization rate of a back plate.
In order to achieve the above object, the present invention provides a bonding method of an LED wafer, comprising the following steps:
providing a substrate;
growing an LED wafer on the surface of the substrate, and forming a first bonding structure on the surface of the LED wafer;
providing a back plate;
arranging a bonding layer on the surface of the back plate, and enabling the surface of the bonding layer to form a second bonding structure which can be bonded with the first bonding structure;
and aligning the LED wafer with the bonding layer, and bonding the first bonding structure and the second bonding structure.
Optionally, the substrate is a zinc oxide substrate, an aluminum nitride substrate, an aluminum oxide substrate, or a silicon carbide substrate.
Optionally, the bonding layer is a metal or a metal oxide.
Optionally, the bonding layer is metallic indium or indium tin oxide.
Optionally, the step of growing an LED wafer on the surface of the substrate and forming a first bonding structure on the surface of the LED wafer includes:
arranging a first forming clamp on the surface of the substrate, and forming a wafer growth gap between the first forming clamp and the substrate;
growing an LED wafer in the wafer growth gap;
peeling the first molding clamp to enable the surface of the LED wafer to form a first bonding structure;
wherein a surface of the first molding jig facing the substrate is formed with the second bonding structure.
Optionally, the first keying feature is a protrusion or a depression.
Optionally, the step of disposing a bonding layer on the surface of the back plate and forming a second bonding structure on the surface of the bonding layer, which can be bonded to the first bonding structure, includes:
disposing a bonding layer on the surface of the backing plate;
imprinting the bonding layer by using a second forming fixture;
peeling the second molding jig to form a second bonding structure bondable to the first bonding structure on the surface of the bonding layer;
wherein a surface of the second molding jig facing the bonding layer is formed with the first bonding structure.
Optionally, the second keying feature is a protrusion or a depression.
Optionally, after the step of aligning the LED chip with the bonding layer and bonding the first bonding structure and the second bonding structure, the method further includes:
and stripping the substrate.
Optionally, after the step of "peeling off the substrate", the method further includes:
and arranging a cathode on the LED wafer.
According to the technical scheme, the first bonding structure is formed on the surface of the LED wafer, and the second bonding structure capable of being bonded with the first bonding structure is formed on the surface of the bonding layer on the backboard, so that when the LED wafer is transferred to the backboard, the limiting and fixing of the LED wafer on the bonding layer can be realized through the bonding of the first bonding structure and the second bonding structure, the accurate positioning of the LED wafer on the bonding layer is realized, and the accurate positioning of the LED wafer on the backboard is realized. Therefore, the positioning mode that the alignment marks are arranged on the back plate and the substrate in the traditional process is replaced by the bonding positioning of the first bonding structure and the second bonding structure, the precious space on the back plate is prevented from being occupied by the alignment marks, the space of the back plate is saved, and the utilization rate of the back plate is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic flow chart illustrating a bonding method of an LED wafer according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of a refinement step of the step "growing an LED wafer on the surface of the substrate and forming a first bonding structure on the surface of the LED wafer" in FIG. 1;
fig. 3 is a schematic flow chart of a refinement step of the step "disposing a bonding layer on the surface of the back plate and forming a second bonding structure capable of bonding with the first bonding structure" in fig. 1.
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The preferred embodiments of the present invention will be described below with reference to the accompanying drawings of the specification, it being understood that the preferred embodiments described herein are merely for illustrating and explaining the present invention, and are not intended to limit the present invention, and that the embodiments and features of the embodiments in the present invention may be combined with each other without conflict.
The invention provides a bonding method of an LED wafer.
Referring to fig. 1, in an embodiment of the bonding method of the LED chip of the present invention, the bonding method of the LED chip includes the following steps:
in step S100, a substrate is provided.
In particular, the substrate may generally be selected from sapphire substrates, which have a number of advantages: firstly, the production technology of the sapphire substrate is mature and the quality is good; secondly, the sapphire substrate has good stability and can be applied to a high-temperature growth process; finally, the sapphire substrate is mechanically strong and easy to handle and clean. Of course, the substrate may be a silicon carbide substrate or a silicon substrate having excellent thermal conductivity.
In addition, the substrate can also be selected from a gallium arsenide substrate or other reasonable materials.
Step S200, growing an LED wafer on the surface of the substrate, and forming a first bonding structure on the surface of the LED wafer.
Specifically, the substrate is heated to a wafer growth temperature, and an LED wafer is grown on the surface of the substrate. Typically, the wafer growth temperature is 900 ℃ to 1200 ℃. In order to form the first bonding structure on the surface of the LED chip, the following two methods are generally used:
first, the growth process of the LED wafer is controlled. That is, the growth space of the LED wafer is limited, and the LED wafer is grown in a predetermined shape so that the first bonding structure is formed on the surface of the LED wafer after the growth is completed. For example, a mold cover having a specific shape on its inner surface is used to cover the surface of the substrate, and the LED chip is grown in the space defined by the mold and the substrate. Therefore, the control process is simple and reliable, and the die is convenient and quick to manufacture. In addition, the mold can be repeatedly used, so that the production process is simplified, and the production efficiency is improved.
And secondly, carrying out surface treatment on the LED wafer after the growth is finished. That is, the surface of the LED wafer after the growth is completed is subjected to processes such as etching, dicing, polishing, and/or other reasonable surface treatments, so that the surface of the LED wafer forms the first bonding structure after the surface treatment. The etching treatment can be realized in a micro-nano etching mode, namely, the surface of the LED wafer is etched by utilizing laser so as to form a first bonding structure on the surface of the LED wafer by etching. Therefore, the method has the advantages of good anisotropy, high selectivity ratio, good controllability, flexibility and repeatability, safe thin line operation, easy realization of automation, no chemical waste liquid, no pollution in the treatment process, high cleanliness and the like. Of course, the etching process can also be realized by vapor etching, plasma etching, or the like.
In step S300, a back plate is provided.
Step S400, arranging a bonding layer on the surface of the back plate, and forming a second bonding structure capable of being bonded with the first bonding structure on the surface of the bonding layer.
Specifically, in order to form the second bonding structure on the surface of the bonding layer, the following two ways can be generally adopted:
firstly, the surface of the bonding layer is subjected to an imprinting process by means of imprinting. That is, the surface of the bonding layer is subjected to imprint processing using a mold having a specific surface shape, so that the surface of the bonding layer after the mold is removed forms the second bonding structure. Therefore, the control process is simple and reliable, and the die is convenient and quick to manufacture. In addition, the mold can be repeatedly used, so that the production process is simplified, and the production efficiency is improved.
Second, the bonding layer is surface treated. That is, the surface of the bonding layer is subjected to a process such as etching, cutting, polishing, and/or other reasonable surface treatment, so that the surface of the bonding layer forms the second bonding structure after the surface treatment. The etching treatment can be realized by micro-nano etching, namely, the surface of the bonding layer is etched by laser so as to form a second bonding structure on the surface of the bonding layer by etching. Therefore, the method has the advantages of good anisotropy, high selectivity ratio, good controllability, flexibility and repeatability, safe thin line operation, easy realization of automation, no chemical waste liquid, no pollution in the treatment process, high cleanliness and the like. Of course, the etching process can also be realized by vapor etching, plasma etching, or the like.
Also, the second bonding structure may be bonded to the first bonding structure. For example, when the first bonding structure is a bump, the second bonding structure is a groove with a shape and size matching with the bump, so that when the first bonding structure is bonded with the second bonding structure, the bump can be inserted and held in the groove, thereby realizing accurate positioning of the LED chip and the bonding layer (or the back plate). In addition, the first bonding structure can also be a groove, and correspondingly, the second bonding structure is a bump matched with the groove in shape and size. Of course, the first keying feature could also be in other suitable forms, such as a combination of a protrusion and a depression, in which case the second keying feature would be a corresponding suitable formation, such as a combination of a depression and a protrusion.
Step S500, aligning the LED chip with the bonding layer, and bonding the first bonding structure and the second bonding structure.
Specifically, when the first bonding structure of the LED chip is bonded to the second bonding structure of the bonding layer, the LED chip is fixed to the bonding layer, i.e. the LED chip is accurately positioned on the back plate.
Therefore, it can be understood that, according to the technical solution of the present invention, the first bonding structure is formed on the surface of the LED wafer, and the second bonding structure capable of being bonded to the first bonding structure is formed on the surface of the bonding layer on the back plate, so that when the LED wafer is transferred to the back plate, the LED wafer can be limited and fixed to the bonding layer by bonding the first bonding structure and the second bonding structure, and the LED wafer can be accurately positioned on the bonding layer, that is, the LED wafer can be accurately positioned on the back plate. Therefore, the positioning mode that the alignment marks are arranged on the back plate and the substrate in the traditional process is replaced by the bonding positioning of the first bonding structure and the second bonding structure, the precious space on the back plate is prevented from being occupied by the alignment marks, the space of the back plate is saved, and the utilization rate of the back plate is improved.
Further, the substrate is a zinc oxide substrate, an aluminum nitride substrate, an aluminum oxide substrate, or a silicon carbide substrate.
Therefore, the material of the substrate is specially selected, the thermal expansion coefficient of the substrate can reach 3-10 times of that of the LED wafer, so that in the process of cooling the substrate and the LED wafer to room temperature, the contraction ratio of the substrate relative to the LED wafer is increased, the shearing action between the substrate and the LED wafer caused by different contraction degrees of the substrate and the LED wafer is enhanced, more micro-seams can be generated between the substrate and the LED wafer, the bonding force between the substrate and the LED wafer is reduced, and the peeling process of the substrate is more time-saving and more convenient.
Further, the bonding layer is a metal or a metal oxide.
Like this, the anchor coat adopts metal material or metal oxide material, can make anchor coat texture soft, and at this moment, the impression process that utilizes the mould to carry out to the anchor coat is easily realized more, and the formation of second bonded structure is simple more, convenient, and reliable to, the mould is not fragile, repeatedly repetitious usage.
Further, the bonding layer is metal indium or indium tin oxide.
Thus, the bonding layer can conduct electricity, and the backboard can be electrically connected with the LED wafer through the bonding layer. At the moment, the back plate can be used as an anode without re-connecting the anode on the LED wafer, so that the structure and the production process of an LED product are further simplified, and the production efficiency is improved.
Referring to fig. 2, the step S200 of the method for bonding an LED wafer according to the present invention, namely growing an LED wafer on the surface of the substrate and forming a first bonding structure on the surface of the LED wafer, includes:
step S210, arranging a first forming clamp on the surface of the substrate, and forming a wafer growth gap between the first forming clamp and the substrate;
step S220, growing an LED wafer in the wafer growth gap;
step S230, stripping the first molding clamp to form a first bonding structure on the surface of the LED wafer;
wherein a surface of the first molding jig facing the substrate is formed with the second bonding structure.
In this embodiment, the first bonding structure is formed by controlling the growth process of the LED wafer by using the first molding jig, which limits the growth space of the LED wafer. Specifically, the surface of the first molding jig is formed with second bonding structures (in this embodiment, a plurality of grooves arranged at intervals), the first molding jig is arranged on the surface of the substrate, the surface of the first molding jig on which the second bonding structures are formed is arranged facing the substrate, and a wafer growth gap is left between the first molding jig and the substrate. And heating the substrate and the first molding clamp together to the wafer growth temperature, so that the LED wafer grows in the wafer growth gap. It can be understood that, since the size of the wafer growth gap is fixed, the surface of the LED wafer facing the first molding jig is bonded with the second bonding structure of the first molding jig, and when the first molding jig is removed, the first bonding structure (in this embodiment, a plurality of bumps arranged at intervals) is formed on the surface of the LED wafer. When the first bonding structure is bonded with the second bonding structure, each lug is inserted into one groove.
The process is simple in process, convenient to operate, good in repeatability and high in reliability, and the production efficiency is effectively improved. Meanwhile, the first forming clamp is not easy to damage, can be repeatedly used, and is more reasonable in resource use.
Preferably, the first keying feature is a protrusion or a depression. In this embodiment, the first bonding structures are a plurality of bumps arranged at intervals, and correspondingly, the second bonding structures are a plurality of grooves arranged at intervals. When the first bonding structure is bonded with the second bonding structure, each bump is inserted into one groove, so that not only can the accurate positioning of the LED wafer be realized, but also the relative sliding between the LED wafer and the bonding layer (or the back plate) can be prevented, the positioning accuracy and reliability of the LED wafer can be guaranteed, and the quality of downstream products can be guaranteed.
Of course, in other embodiments, the first bonding structure may also be a plurality of spaced apart grooves, and correspondingly, the second bonding structure may be a plurality of spaced apart bumps.
It can be understood that the first bonding structure is arranged in a protruding or sunken manner, the structure is simple and reliable, the first molding clamp can be machined and manufactured more simply and conveniently, the production process is simplified, the production efficiency is improved, the first molding clamp can be stripped (retreated) more conveniently and quickly, the production efficiency is improved, and meanwhile, the positioning process of the LED wafer can be more accurate and effective.
Referring to fig. 3, the step S400 of the bonding method for LED chips according to the present invention, namely, disposing a bonding layer on the surface of the back plate and forming a second bonding structure on the surface of the bonding layer, which can be bonded to the first bonding structure, includes:
step S410, arranging a bonding layer on the surface of the back plate;
step S420, imprinting the bonding layer by using a second forming clamp;
step S430, stripping the second forming fixture to form a second bonding structure capable of being bonded with the first bonding structure on the surface of the bonding layer;
wherein a surface of the second molding jig facing the bonding layer is formed with the first bonding structure.
In this embodiment, the formation of the second bonding structure is achieved by imprinting the bonding layer using a second forming jig. Specifically, the surface of the second molding jig is formed with the first bonding structure (in this embodiment, a plurality of bumps arranged at intervals), the surface of the second molding jig on which the first bonding structure is formed faces the bonding layer, the bonding layer is imprinted, and pressure is maintained for a certain time. It will be appreciated that the surface of the bonding layer facing the second forming jig will bond with the first bonding structures of the second forming jig, and that when the second forming jig is removed, the second bonding structures (in this embodiment, a plurality of spaced apart grooves) are formed in the surface of the bonding layer. When the second bonding structure is bonded with the first bonding structure, each lug is inserted into one groove.
The process is simple in process, convenient to operate, good in repeatability and high in reliability, and the production efficiency is effectively improved.
Preferably, the second keying feature is a protrusion or a depression. In this embodiment, the second bonding structures are a plurality of grooves arranged at intervals, and correspondingly, the first bonding structures are a plurality of bumps arranged at intervals. When the second bonding structure is bonded with the first bonding structure, each bump is inserted into one groove, so that not only can the accurate positioning of the LED wafer be realized, but also the relative sliding between the LED wafer and the bonding layer (or the back plate) can be prevented, the positioning accuracy and reliability of the LED wafer can be guaranteed, and the quality of downstream products can be guaranteed.
Of course, in other embodiments, the second bonding structures may also be a plurality of spaced-apart bumps, and correspondingly, the first bonding structures may be a plurality of spaced-apart grooves.
It can be understood that the second bonding structure is convex or concave, and the structure is simple and reliable, so that the second forming fixture is simpler and more convenient to machine and manufacture, the production process is simplified, the production efficiency is improved, the stripping (retreating) process of the second forming fixture is more convenient and faster to read, the production efficiency is improved, and meanwhile, the positioning process of the LED wafer is more accurate and effective.
Referring to fig. 1 again, the method for bonding an LED chip of the present invention further includes, after the step S500 — "aligning the LED chip with the bonding layer and bonding the first bonding structure and the second bonding structure", the steps of:
step S600, stripping the substrate;
step S700, a cathode is arranged on the LED wafer.
It will be appreciated that the peeling process of the substrate, the mounting process of the cathode, and the like can be more easily achieved and the resulting product structure is more reliable due to the presence of the bond between the LED chip and the bonding layer.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (8)
1. A bonding method of an LED wafer is characterized by comprising the following steps:
providing a substrate;
growing an LED wafer on the surface of the substrate, and forming a first bonding structure on the surface of the LED wafer;
providing a back plate;
arranging a bonding layer on the surface of the back plate, and enabling the surface of the bonding layer to form a second bonding structure which can be bonded with the first bonding structure;
aligning the LED wafer with the bonding layer, and bonding the first bonding structure and the second bonding structure;
wherein the first bonding structure is a protrusion and the second bonding structure is a recess; or, the first bonding structure is a recess, and the second bonding structure is a protrusion.
2. The bonding method according to claim 1, wherein the substrate is a zinc oxide substrate, an aluminum nitride substrate, an aluminum oxide substrate, or a silicon carbide substrate.
3. The bonding method of claim 1, wherein the bonding layer is a metal or a metal oxide.
4. The bonding method according to claim 3, wherein the bonding layer is indium metal or indium tin oxide.
5. The bonding method according to any one of claims 1 to 4, wherein the step of growing an LED wafer on the surface of the substrate and forming a first bonding structure on the surface of the LED wafer comprises:
arranging a first forming clamp on the surface of the substrate, and forming a wafer growth gap between the first forming clamp and the substrate;
growing an LED wafer in the wafer growth gap;
and peeling the first molding clamp to form a first bonding structure on the surface of the LED wafer.
6. The bonding method according to any one of claims 1 to 4, wherein the step of disposing a bonding layer on the surface of the back plate and forming a second bonding structure, which is bondable to the first bonding structure, on the surface of the bonding layer comprises:
disposing a bonding layer on the surface of the backing plate;
imprinting the bonding layer by using a second forming fixture;
and stripping the second forming fixture to enable the surface of the bonding layer to form a second bonding structure which can be bonded with the first bonding structure.
7. The bonding method according to any one of claims 1 to 4, wherein the step of "aligning the LED wafer with the bonding layer and bonding the first bonding structure and the second bonding structure" further comprises:
and stripping the substrate.
8. The bonding method of claim 7, wherein the step of "peeling off the substrate" is followed by further comprising:
and arranging a cathode on the LED wafer.
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| CN106783648A (en) * | 2016-12-28 | 2017-05-31 | 歌尔股份有限公司 | A kind of preparation method of LED display |
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| CN103560186A (en) * | 2013-10-30 | 2014-02-05 | 北京大学 | Nano LED flip chip and manufacturing method thereof |
| CN106783648A (en) * | 2016-12-28 | 2017-05-31 | 歌尔股份有限公司 | A kind of preparation method of LED display |
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