TWI564578B - Test head module and reconditioning method thereof - Google Patents

Description

Test head module and method for reconditioning

The present invention relates to a test head module, and more particularly to a test head module including a remodelable thermal interface material and a method of refinishing the same.

In the manufacture of electronic components (eg, integrated circuit components, wafers, dies, etc.), electronic component testing devices are typically used to test the performance or functionality of the electronic components.

Existing electronic component testing devices typically include a contact handler for adsorbing and transporting electronic components. A test head module is disposed at the top end of the contact arm. In order to test the electronic components at a specific temperature, temperature control is performed using a temperature regulator in the test head module. In addition, in order to improve the contact adhesion and thermal conductivity between the test head and the electronic component, a thermal interface material (TIM) is disposed between the test head and the electronic component.

As the thermal interface material repeatedly contacts and peels off the electronic component, the surface of the thermal interface material may be scratched or defective. As a result, good contact and heat conduction between the thermal interface material and the electronic component will not occur, and the test temperature of the electronic component cannot be accurately controlled. In order to avoid the above problems, the thermal interface material is usually replaced after a certain number of uses. However, such a This will lead to an increase in production costs. Therefore, there is a need in the art to seek further improvements.

An embodiment of the present disclosure discloses a test head module including: a test head including at least one recess disposed on a working surface of the test head; and a thermal interface material embedded in the recess, wherein the solid phase of the thermal interface material - The liquid phase transition temperature is between the operating temperature of the test head module and the melting point of the test head.

Another embodiment of the present disclosure discloses a method for refinishing a test head module, comprising: providing a test head module as described above; heating to melt the thermal interface material; providing a mold to the thermal interface material; applying pressure to the mold Coating the thermal interface material; cooling the thermal interface material; and removing the mold.

The above and other objects, features, and advantages of the present invention will become more apparent and understood.

100‧‧‧Test head module

102‧‧‧Test head

102S‧‧‧ work surface

104‧‧‧temperature regulator

106‧‧‧Diffusion barrier

108‧‧‧pressure regulator

110, 110a, 110b‧‧‧ Thermal interface materials

110S‧‧‧Operating surface

120, 120a, 120b‧‧‧ notches

120V‧‧‧right angle

120X‧‧‧ lobes

120Y‧‧‧cut angle

120Z‧‧‧ fillet

122, 124a, 124b‧‧‧ recessed

140‧‧‧Mold

140S‧‧‧Mold surface

142a, 142b‧‧‧ protruding parts

150‧‧‧ chip package

152‧‧‧Substrate

154‧‧‧ wafer

156‧‧‧External electrical connection

158‧‧‧ Underfill material

160‧‧‧Internal electrical connection

200‧‧‧First direction

300‧‧‧Mold casting steps

T1, T2‧‧‧ thickness

1 is a cross-sectional view showing a test head module and a chip package in accordance with some embodiments of the present disclosure.

2A-2C are cross-sectional views showing various process stages for refinishing the test head module in accordance with some embodiments of the present disclosure.

3A-3B are cross-sectional schematic views of a mold in accordance with some embodiments of the present disclosure.

4 is a cross-sectional view showing a test head module undergoing a reconditioning step in accordance with some embodiments of the present disclosure.

FIG. 5 is a diagram showing a test head module according to some embodiments of the present disclosure. Schematic diagram of the section.

6A-6C are cross-sectional views showing a test head module in accordance with some embodiments of the present disclosure.

The above and other objects, features and advantages of the present invention will become more <RTIgt; However, it will be understood by those of ordinary skill in the art that the description In fact, in order to make the description clearer, the relative size ratio of various feature structures can be arbitrarily increased or decreased. Throughout the specification and in all figures, the same reference numerals refer to the same features.

The various features of the present disclosure are disclosed in the following, and various embodiments of the present invention are described. The embodiments are for illustrative purposes only and are not intended to limit the scope of the disclosure. For example, it is mentioned in the specification that the first feature is formed on the second feature, including an embodiment in which the first feature is in direct contact with the second feature, and additionally includes another feature between the first feature and the second feature. An embodiment of the feature, that is, the first feature is not in direct contact with the second feature.

The present disclosure provides a test head module and a method for refinishing the same. FIG. 1 is a cross-sectional view showing a test head module 100 and a chip package 150 according to some embodiments of the present disclosure.

Referring to FIG. 1 , the chip package 150 includes a substrate 152 , a wafer 154 , an external electrical connection portion 156 , an underfill material 158 , and an internal electrical connection portion 160 . The wafer 154 is formed on the upper surface of the substrate 152 and is electrically connected internally. The connecting portion 160 is electrically connected to the substrate 152. The external electrical connection portion 156 is formed on the lower surface of the substrate 152 for electrically connecting the substrate 152 to an external circuit (for example, a circuit board for testing). An underfill material 158 is formed between the substrate 152 and the wafer 154 to secure the relative position of the substrate 152 to the wafer 154. It should be noted that although in the drawings, the chip package 150 includes two wafers 154. However, in other embodiments, the chip package 150 can include one wafer or more than three wafers.

Still referring to FIG. 1 , the test head module 100 includes a test head 102 having a recess 120 , a temperature regulator 104 , a pressure regulator 108 , and a thermal interface material 110 embedded in the recess 120 , and the thermal interface material 110 is in the surface. The operation surface 110S is provided in the direction of the chip package 150. In this embodiment, an optional diffusion barrier layer 106 may be disposed between the test head 102 and the thermal interface material 110. Prior to performing the test step, the test head module 100 moves toward the chip package 150 along the first direction 200, as shown in FIG. 1A. When the test step is performed, the thermal interface material 110 of the test head module 100 is aligned and directly contacts the wafer 154 of the chip package 150.

When the test step is performed, the pressure regulator 108 applies a pressure to the test head 102 to ensure contact adhesion of the thermal interface material 110 to the wafer 154. Pressure regulator 108 can include any pressurization device and will not be described in detail herein.

When the test step is performed, the temperature regulator 104 can apply a thermal energy to the wafer 154 to perform the test step at a particular operating temperature. This operating temperature varies with the test item and wafer type, and in some embodiments, the operating temperature is between 25-130 °C. In other embodiments, the operating temperature can be between 70-90 °C. When the test step is complete, the temperature regulator 104 can remove thermal energy from the wafer 154 to thereby cool the wafer 154. Temperature regulator 104 can include any The combination of heater and cooler is not detailed here.

The test head 102 has a working surface 102S in a direction facing the chip package 150. As shown in FIG. 1, a recess 120 for accommodating the thermal interface material 110 is disposed on the working surface 102S of the test head 102. When the test step is performed, since the test head 102 is subject to the pressure from the pressure regulator 108 and the thermal energy from the temperature regulator 104, the test head 102 can be selected from a high melting point hard metal. In some embodiments, the material of the test head 102 can include copper, steel, tungsten, other suitable metallic materials, or alloys or combinations of the foregoing. In some embodiments, the test head 102 has a melting point between 1000 and 1600 °C.

When the test step is performed, the operating surface 110S of the thermal interface material 110 directly contacts the upper surface of the wafer 154. The primary function of the thermal interface material 110 is to transfer thermal energy into or out of the wafer 154 by transferring thermal energy through contact. Therefore, the thermal interface material 110 generally has excellent thermal conductivity, and preferably has a good contact tightness between the operation surface 110S and the upper surface of the wafer 154.

In the prior art, the working surface of the test head is a flat surface, and the thermal interface material is physically fixed (for example, the thermal interface material is aluminum foil and covers the test head) on the work surface. In some embodiments, the physical fixation described above may also be to glue the thermal interface material to the work surface with a polymer, but this approach may reduce the heat transfer performance. In other embodiments, the test head can also be directly in contact with the test object without configuring the thermal interface material. Conventional thermal interface materials may include polymeric heat dissipating materials (eg, resin-based heat sink patches or thermal grease), hard metal materials (eg, metal blocks or sheets), or soft metal materials (eg, metal foils). However, each of these thermal interface materials has its disadvantages. For example, the thermal conductivity of the polymer heat dissipating material is inferior to that of the metal, and the operating temperature cannot be accurately controlled. Or the specified operating temperature cannot be reached in a short time. Furthermore, the polymer heat-dissipating material is softer than metal. After several cycles of use, the operating surface will be deformed due to pressure, resulting in poor contact between the thermal interface material and the wafer, so it must be replaced frequently. . In addition, at the operating temperature of the test step, the polymer heat dissipating material may melt or decompose due to heat, thereby adhering to the surface of the wafer to cause contamination. On the other hand, because a plurality of wafers located on a chip package typically produce a height error during the manufacturing process, not all of the upper surfaces of the wafers have the same level. Furthermore, wafers located on the same chip package may also have different thicknesses based on design requirements. For a hard metal material, its surface hardness is high and it is not flexible, so its operating surface cannot make good contact with each wafer, which will cause uneven heating of the chip package. Further, if excessive pressure is applied in order to make the hard metal material in good contact with the wafer, cracks or breakage of the wafer may occur. In addition, once the surface of the hard metal material is damaged or deformed, it must be replaced by a single piece (piece), which will increase the process cost. In addition, although the soft metal material has both thermal conductivity and flexibility, its thickness is very thin. After several cycles of use, the operating surface may be deformed, worn or perforated due to pressure, and must be replaced frequently. It also has an adverse effect on process costs.

In order to solve the above problems, the present disclosure proposes a remodelable thermal interface material having a solid-liquid phase transition temperature between the operating temperature of the test head module and the melting point of the test head. The details are as follows.

In the present disclosure, the solid-liquid phase transition temperature of the thermal interface material 110 must be greater than the operating temperature of the test head module, such that the thermal interface material 110 can be maintained in a solid phase at the operating temperature of the test step, thereby avoiding Contaminated wafer 154 or the entire chip package 150. Furthermore, the solid-liquid phase transition temperature of the thermal interface material 110 must be less than the melting point of the test head 102, so that the thermal interface material 110 can be shaped without affecting the shape of the test head 102, in particular When the operating surface 110S of the thermal interface material 110 is initially shaped or reshaped, the high temperature is prevented from affecting the shape of the test head 102.

In some embodiments, the initial shaping step can include filling the thermal interface material 110 into the liquid or molten state and filling the recess 120, and then cooling the thermal interface material 110 to a solid phase to shape it. In other embodiments, the initial shaping step may include filling the solid phase thermal interface material 110 into the recess 120 and heating to a liquid phase or molten state, followed by cooling the thermal interface material 110 to a solid phase. It is shaped. After the shaping step described above, the thermal interface material 110 is conformally embedded in the recess 120, as shown in FIG. It should be noted that the initial shaping step described above refers to the step of embedding the thermal interface material 110 in the empty recess 120.

Thermal interface material 110 can include, but is not limited to, a metal, a thermoplastic polymer containing a thermally conductive filler, a phase change material, or a combination thereof. Suitable metals such as indium (In), lead (Pb), tin (Sn), silver (Ag), lithium (Li), cadmium (Cd), zinc (Zn), aluminum (Al), magnesium (Mg), germanium (Po), bismuth (Bi) or the above alloys. In particular, if the solid phase-liquid phase transition temperature of the above pure metal is too high (for example, pure silver, pure aluminum, pure magnesium), it may cause operational inconvenience, and the alloy may be melted and alloyed with other metals. The thermal interface material 110 is formed to reduce the solid phase-liquid phase transition temperature of the overall alloy such that the solid phase-liquid phase transition temperature of the thermal interface material 110 is between the operating temperature of the test head module and the melting point of the test head 102. . In addition, suitable thermoplastic polymers may include, for example, poly imide (polyimide, PI) and so on. Suitable thermally conductive fillers can include, for example, indium, lead, tin, silver, lithium, cadmium, zinc, aluminum, magnesium, copper, gold, platinum, or alloys thereof. In some embodiments, the thermal interface material 110 is indium or an indium alloy.

It should be noted that the solid-liquid phase transition temperature of the thermal interface material 110 can be selected according to the needs of practical applications, as long as the solid-liquid phase transition temperature is between the operating temperature of the test head module and the melting point of the test head 102. You can do it. In some embodiments, the operating temperature is between 70-90 ° C and the melting point of the test head 102 is about 1600 ° C, so the solid-liquid phase transition temperature of the thermal interface material 110 can be between about 90-1600 ° C. between. In other embodiments, the operating temperature is between 25-130 ° C and the melting point of the test head 102 is about 1100 ° C, so the solid-liquid phase transition temperature of the thermal interface material 110 can be between about 130-1100 ° C. between. To save energy and time required for the shaping step, the solid phase-liquid phase transition temperature of the thermal interface material 110 can be between about 130-360 °C.

During the shaping step of the thermal interface material 110, atomic exchange or chemical reaction is readily between the test head 102 and the thermal interface material 110. As a result, an intermetallic compound (IMC) is generated, which in turn causes a change in the chemical composition and physicochemical properties of the test head 102 and the thermal interface material 110.

In order to avoid the formation of intermetallic compounds, the diffusion barrier layer 106 may be disposed between the test head 102 and the thermal interface material 110 as shown in FIG. The melting point of the diffusion barrier layer 106 can be higher than the solid phase-liquid phase transition temperature of the thermal interface material 110. As a result, in the shaping step of the thermal interface material 110, the diffusion barrier layer 106 is not deformed by heat. Furthermore, the diffusion barrier layer 106 can be selected for the test head 102 and the thermal interface material 110. There are any chemically active materials. In this way, the intermetallic compound can be avoided, thereby maintaining the original chemical composition and physicochemical properties of the test head 102 and the thermal interface material 110.

A suitable material can be conformally deposited on the bottom and sidewalls of the recess 120 using a suitable process to form a diffusion barrier layer 106 in the recess 120. Suitable diffusion barrier layer 106 materials may include titanium, tantalum, titanium nitride, tantalum nitride, titanium zirconium alloy, titanium zirconium nitride, nickel, nickel vanadium alloy, or combinations thereof. Suitable processes may include physical vapor deposition (PVD), chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD), sputtering, or a combination thereof.

In addition, the diffusion barrier layer 106 may be subjected to a texturing process toward the surface of the thermal interface material 110 to form various microstructures (not shown), thereby enhancing the relationship between the test head 102 and the thermal interface material 110. Adhesiveness. For example, the microstructure may include periodically arranged conical, triangular, quadrangular, dome, cone, cylinder, hemisphere, cube, or the like, or a microstructure of each of the microstructures. The directional dimension and the spacing between adjacent microstructures can be on the order of microns or millimeters. Suitable roughening treatments may include wet etching or dry etching, or embossing or other physical roughening. Since the surface of the diffusion barrier layer 106 has a microstructure, the contact area and adhesion strength of the diffusion barrier layer 106 and the thermal interface material 110 can be increased.

The present disclosure also provides a method for refinishing the test head module, and FIG. 2A-2C is a cross-sectional view showing each process stage of refinishing the test head module according to some embodiments of the present disclosure. For the sake of simplicity, the same reference numerals will be used for the components in FIG. 1 and will not be described again.

Operation of the thermal interface material 110 after multiple cycles of use Surface 110S will deform due to pressure. Referring to FIG. 2A, a recess 122 is formed on the operating surface 110S of the thermal interface material 110. The recess 122 may cause the contact tightness of the thermal interface material 110 to the wafer to deteriorate. As described above, in the prior art, no matter which thermal interface material is used, once the operating surface of the thermal interface material cannot be brought into close contact with the wafer due to deformation, it must be replaced and cannot be reused.

In order to extend the service life of the thermal interface material 110 and achieve the purpose of repeated use, the present disclosure also provides a method of refinishing the test head module. Referring to FIG. 2B, in the embodiment, the method for refinishing the test head module includes the following steps: (a) heating to melt the thermal interface material; (b) providing the mold to the thermal interface material; (c) applying pressure To coin the thermal interface material; (d) to cool the thermal interface material; and (e) to remove the mold.

In step (a), the thermal interface material 110 is heated to a temperature such that the thermal interface material 110 assumes a liquid phase or a molten state for subsequent reshaping steps. In some embodiments, the temperature is approximately the solid-liquid phase transition temperature of the thermal interface material 110, leaving the thermal interface material 110 in a liquid phase or molten state. As described above, since the solid-liquid phase transition temperature of the thermal interface material 110 is less than the melting point of the test head 102 and the diffusion barrier layer 106, even if the thermal interface material 110 is heated to a liquid phase or a molten state, it does not change. The shape of the test head 102 and the diffusion barrier layer 106. Moreover, due to the chemical bluntness of the diffusion barrier layer 106, no intermetallic compounds are produced and the test head 102 and the thermal interface material 110 are not altered. The original chemical composition as well as physical and chemical properties.

In steps (b) and (c), the mold 140 is contacted with the operating surface 110S of the thermal interface material 110 and pressure is applied to a coining step 300 whereby the thermal interface material 110 is reshaped. As shown in FIG. 2B, while the coining step 300 is being performed, the mold 140 is moved toward the thermal interface material 110 such that the surface 140S of the mold 140 is in direct contact with the operating surface 110S of the thermal interface material 110. It will be appreciated that in order to ensure that the mold 140 does not deform during the coining step, the melting point of the mold 140 is also greater than the solid-liquid phase transition temperature of the thermal interface material 110.

In steps (d) and (e), after cooling the thermal interface material 110 to shape it, the mold 140 can be removed. As shown in FIG. 2C, after the refinishing step, the operating surface 110S of the thermal interface material 110 can be reshaped into a flat surface without any depressions.

As shown in Figs. 2A-2C, in the reconditioning step of the present embodiment, the test head 102 is removed, and the thermal interface material 110 is heated and pressurized by other heating means and pressurizing means. It should be noted that in other embodiments, the test head 102 may not be removed, and the temperature regulator 104 of FIG. 1 may be directly used for heating and cooling, and the pressure regulator 108 of FIG. 1 is directly used to apply pressure. Perform the above reconditioning steps.

3A is a cross-sectional view showing the mold 140 in accordance with some embodiments of the present disclosure. Referring to FIG. 3A, in the present embodiment, the mold 140 has a flat surface 140S, so that the operation surface 110S having the depressed portion 122 can be reshaped to form a flat surface.

However, in other embodiments, the operation table of the thermal interface material 110 The surface 110S can also be shaped with the surface profile of the wafer on the package to achieve a sufficient fit (especially when there are a plurality of wafers having different heights on the package). Therefore, the mold 140 used may also have no The flat surface 140S is formed by molding the operating surface 110S of the thermal interface material 110 into a shape complementary to the surface contour of the wafer (as shown in FIG. 3B). In FIG. 3B, the mold 140 has a concave-convex surface 140S, wherein the concave-convex surface 140S includes two protrusions 142a and 142b of different heights. In the present embodiment, the above-described refinishing step is performed by the mold 140 having the uneven surface 140S, and the operation surface 110S of the thermal interface material 110 can be reshaped into a shape complementary to the surface 140S. An embodiment will be described below.

4 is a cross-sectional view showing a test head module undergoing a reconditioning step in accordance with some embodiments of the present disclosure. The test head module of Fig. 4 is subjected to a refining step using a mold 140 as shown in Fig. 3B. Here, for simplicity of illustration, only test head 102 is depicted in FIG. As shown in FIG. 4, the reshaped operating surface 110S will have two different depths of recesses 124a and 124b, wherein the recesses have the same depth as the relief surface 140S (as depicted in FIG. 3B). The height of the portions 142a and 142b. Here, in order to simplify the drawing, only two protrusions of different heights are formed on the uneven surface 140S. However, those of ordinary skill in the art will appreciate that any number of protrusions and/or depressions of any shape can be formed on the relief surface 140S as desired. In other words, the operating surface 110S of the thermal interface material 110 is not limited to a flat surface, and the operating surface 110S may also include a concave-convex surface having protrusions of any number and shape.

It should be noted that for the same chip package of wafers with different heights, or a plurality of chip packages of different heights, the prior art can only Use a very soft thermal interface material (for example, a polymeric heat sink) that would otherwise not be tested in the same batch of test steps. However, for a polymer heat-dissipating material having a very soft texture, the thermal conductivity is inferior to that of a hard heat-dissipating material such as a metal. However, according to some embodiments of the present disclosure, using a mold having a concave-convex surface, the surface topography of the operating surface of the thermal interface material can be arbitrarily adjusted depending on the needs of the application. In this way, even if a metal having a better thermal conductivity but a harder texture is used as the thermal interface material, the same chip package of wafers having different heights or a plurality of chip packages having different heights may be in the same batch. Test in the next test step.

FIG. 5 is a cross-sectional view showing a test head module according to another embodiment of the present disclosure. As shown in FIG. 5, two recesses 120a and 120b may be disposed on the working surface 102S of the test head 102. The thermal interface material 110a embedded in the recess 120a has a thickness T1, and the thermal interface material 110b embedded in the recess 120b has a thickness T2, wherein T2 is greater than T1, and the thermal interface material 110a is different from the thermal interface material 110b. In this embodiment, the test head 102 is divided into two independently operated test areas, and the two test areas are controlled at different operating temperatures using the material and thickness differences of the thermal interface material. Therefore, it is possible to perform test steps of different operating temperatures in the same batch of test steps. Here, to simplify the drawing, only two notches are shown. However, those of ordinary skill in the art will appreciate that the need for visual testing creates any number of well-shaped recesses on the working surface 102S of the test head 102 to correspond to the pre-tested wafer.

It can be seen from the above that, according to some embodiments of the present disclosure, thermal interface materials including different materials and/or thicknesses can be respectively embedded in each recess according to the requirements of the application, thereby dividing the same test head into multiple test areas. area. In this way, the flexibility of the test step can be increased, and the time and cost of the test step can be saved.

It should be noted that although the notch 120 illustrated in FIGS. 1-5 has a right angle of 120V on the lip top of the working surface 102S (only shown in FIG. 5), in other embodiments, The recess 120 can include other shapes on the sidewall edges of the face 102S (as shown in Figures 6A-6C). 6A-6C are cross-sectional views showing the test head module of other embodiments of the present disclosure. Here, for simplicity of illustration, only test head 102 is shown. As can be seen from Figures 6A-6C, the notch 120 can have a side wall edge of the working surface 102S, such as: a lobe (as shown in Figure 6A), a chamfer (as shown in Figure 6B), or a rounded corner (such as Figure 6C shows). Still further, in FIG. 6A, the recess 120 has a lobe 120X at the sidewall edge of the working surface 102S. The lobes 120X help to physically secure the thermal interface material 110 such that the thermal interface material 110 does not fall off the test head 102. In FIGS. 6B and 6C, the notches 120 have a chamfered angle 120Y and a rounded corner 120Z on the side wall edges of the working surface 102S, respectively. The chamfer 120Y and the rounded corner 120Z allow the outer diameter of the recess 120 to be larger than the inner diameter to facilitate entry of the mold 140 into the recess 120 during the coining step.

The present disclosure proposes a test head module comprising a remodelable thermal interface material, wherein the solid phase-liquid phase transition temperature of the remodelable thermal interface material is between the operating temperature of the test head module and the melting point of the test head between. The disclosure also proposes a method for refinishing the test head module, the test head module comprising the above reshaped heat interface material, melting the thermal interface material by heating, and reusing the deformed operation surface by using a mold Shaped.

Compared with the prior art, the test head module including the reshaped thermoplastic interface material provided by the present disclosure and the method for refinishing thereof have at least The following advantages:

(1) The thermal interface material provided by the present disclosure can be reshaped by heating and coining steps after deformation or wear, and does not need to be replaced frequently, thereby greatly improving the service life of the thermal interface material. And save costs.

(2) The reconditioning step provided by the present disclosure can directly use the temperature regulator and the pressure regulator in the test device to heat, cool and pressurize the thermal interface material, and has high compatibility with the existing measuring equipment. No additional equipment needs to be modified or purchased. Therefore, no additional charges will be incurred.

(3) In the re-trimming step, a mold having a flat surface or a concave-convex surface may be used as needed. Therefore, the surface topography of the operating surface of the thermal interface material can be arbitrarily adjusted depending on the needs of the application. For the same chip package of wafers with different heights, or multiple chip packages of different heights, it can also be tested in the same batch of test steps.

(4) The same test head can be divided into multiple test areas according to the needs of the application. Therefore, the flexibility of the test step can be increased, and the time and cost of the test step can be saved.

(5) When the composition or chemical properties of the thermal interface material are changed (for example, the thermal interface material is oxidized), it is only necessary to heat and melt it, and it can be easily taken out from the test head. In addition, when the test head is damaged or replaced, if the thermal interface material can still be used without deterioration, the thermal interface material can also be heated and melted out, and re-installed on the new test head for repeated use. For costly thermal interface materials, this recycling step can reduce the expense of purchasing thermal interface materials.

In summary, the test head module including the reshaped thermoplastic interface material and the method for refinishing the same can greatly improve the thermal interface material. The service life and the flexibility and efficiency of the test steps can be reduced, which in turn reduces the time and cost of the test steps.

While the invention has been described above in terms of several preferred embodiments, it is not intended to limit the scope of the present invention, and any one of ordinary skill in the art can make any changes without departing from the spirit and scope of the invention. And the scope of the present invention is defined by the scope of the appended claims.

100‧‧‧Test head module

102‧‧‧Test head

102S‧‧‧ work surface

104‧‧‧temperature regulator

106‧‧‧Diffusion barrier

108‧‧‧pressure regulator

110‧‧‧ Thermal interface materials

110S‧‧‧Operating surface

120‧‧‧ notch

150‧‧‧ chip package

152‧‧‧Substrate

154‧‧‧ wafer

156‧‧‧External electrical connection

158‧‧‧ Underfill material

160‧‧‧Internal electrical connection

200‧‧‧First direction

Claims (14)

A test head module includes: a test head including at least one notch disposed on a working surface of the test head; and a thermal interface material embedded in the at least one recess, wherein the solid phase of the thermal interface material - The liquid phase transition temperature is between an operating temperature of the test head module and the melting point of the test head. When a test head module is reconditioned, a reconditioning temperature is between the solid phase of the thermal interface material - The liquid phase transition temperature is between the melting point of the test head to reshape the thermal interface material. The test head module of claim 1, wherein the thermal interface material comprises a metal. The test head module of claim 2, wherein the metal comprises indium, lead, tin, silver, lithium, cadmium, zinc, aluminum, magnesium, lanthanum, cerium or an alloy thereof. The test head module of claim 1, wherein the thermal interface material comprises a thermoplastic polymer containing a thermally conductive filler. The test head module of claim 4, wherein the thermoplastic polymer comprises polyimine. The test head module of claim 4, wherein the thermally conductive filler comprises indium, lead, tin, silver, lithium, cadmium, zinc, aluminum, magnesium, copper, gold, platinum or an alloy thereof. The test head module of claim 1, wherein the thermal interface material comprises a metal, a thermoplastic polymer containing a thermal conductive filler, and a combination of phase change materials. The test head module of claim 1, further comprising a diffusion barrier layer disposed between the test head and the thermal interface material, wherein a melting point of the diffusion barrier layer is higher than a thermal interface material The solid phase-liquid phase transition temperature is such that the diffusion barrier layer insulates the reaction between the test head and the thermal interface material when the test head module is reconditioned. The test head module of claim 8, wherein the diffusion barrier layer comprises titanium, tantalum, titanium nitride, tantalum nitride, titanium zirconium alloy, titanium zirconium nitride, nickel, nickel vanadium alloy or the like The combination. The test head module of claim 8, wherein the surface of the diffusion barrier layer in contact with the thermal interface material has a microstructure, wherein the microstructure comprises a periodically arranged cone, a triangular cone, a quadrangular pyramid, Domed bell cones, cylinders, hemispheres, cubes, etc. are raised or recessed. The test head module of claim 1, wherein the at least one notch has an angle, a rounded corner or a lobed corner at a side wall edge of the working surface. The test head module of claim 1, wherein the thermal interface material comprises an operating surface, wherein the operating surface comprises a recess, a protrusion or a combination thereof. A method for refinishing a test head module, comprising: providing a test head module as described in claim 1-12; heating to melt the thermal interface material; providing a mold to the thermal interface material; applying a pressure to coin the thermal interface material; cooling the thermal interface material; and removing the mold. The method of refinishing a test head module according to claim 13, wherein the mold has a concave-convex surface, and after cooling the thermal interface material, the operation surface has a surface relief complementary to the concave-convex surface ( Topology).